High-pressure gaseous hydrogen peroxide supply apparatus, high-pressure substrate processing apparatus using same, and high-pressure substrate processing method

Abstract

The invention discloses a high-pressure gaseous hydrogen peroxide supply apparatus, and a high-pressure substrate processing apparatus and method using the same. The high-pressure substrate processing method includes: a step of reacting hydrogen gas and oxygen gas; a step of obtaining a generated hydrogen oxide having a first pressure; a step of converting the generated hydrogen oxide into a treated gaseous hydrogen oxide having a second pressure higher than the first pressure and atmospheric pressure; and a step of causing the processing gaseous hydrogen oxide to act on the substrate to be processed in the processing chamber.

Description

Technical Field

[0001] The invention relates to a high-pressure substrate processing device and method, and a high-pressure gaseous hydrogen oxide supply device used therein. Background Art

[0002] Generally, during the manufacturing process of a semiconductor device, various processes are performed on a semiconductor substrate. Examples of such processes include oxidation, nitridation, ion implantation, and deposition processes. There is also a hydrogen or deuterium heat treatment process for improving the interface characteristics of the semiconductor device.

[0003] The manufacturing process can be roughly divided into a vacuum process and a high pressure process according to the gas pressure acting on the substrate. If the pressure of the former is lower than the atmospheric pressure, the pressure of the latter is higher than the atmospheric pressure.

[0004] The two processes have different properties and characteristics, so although it is not a problem in one process, it may cause a major problem in the other process. For example, when water vapor is used in wet oxidation, unlike the vacuum process, impurities may become a big problem in the high pressure process.

[0005] The aforementioned background technology is technical information that the inventor possesses or learns during the derivation process in order to derive the embodiments of the present invention, and is not necessarily a known technology disclosed to the general public before the present application. Summary of the invention

[0006] Technical issues

[0007] An object of the present invention is to provide a high-pressure gaseous hydrogen oxide supply device, a high-pressure substrate processing device and a method using the same, which can effectively remove impurities in a process using high-pressure gaseous hydrogen oxide, thereby preventing quality defects in substrates processed by the above process.

[0008] Another object of the present invention is to provide a high-pressure gaseous hydrogen oxide supply device, a high-pressure substrate processing device and a method using the same, which can prevent the explosion hazard caused by preventing the generation of unreacted gas or removing the unreacted gas when generating high-pressure gaseous hydrogen oxide.

[0009] Means of solving the problem

[0010] In order to achieve the above object, a high-pressure substrate processing method according to one aspect of the present invention may include: a step of reacting hydrogen and oxygen; a step of obtaining generated hydrogen oxide having a first pressure; a step of converting the generated hydrogen oxide into treated gaseous hydrogen oxide having a second pressure higher than the first pressure and atmospheric pressure; and a step of allowing the treated gaseous hydrogen oxide to act on a substrate to be processed in a processing chamber.

[0011] Here, the step of converting the generated hydrogen oxide into treated gaseous hydrogen oxide having a second pressure higher than the first pressure and the atmospheric pressure may include: injecting an auxiliary gas into the process chamber in addition to the gaseous hydrogen oxide obtained from the generated hydrogen oxide, so that the gaseous hydrogen oxide obtained from the generated hydrogen oxide reaches the second pressure in the process chamber.

[0012] Here, the step of converting the generated hydrogen oxide into treated gaseous hydrogen oxide having a second pressure higher than the first pressure and the atmospheric pressure may include: a step of obtaining liquid hydrogen oxide from the generated hydrogen oxide; a step of pressurizing the liquid hydrogen oxide; and a step of vaporizing the pressurized liquid hydrogen oxide to obtain the treated gaseous hydrogen oxide.

[0013] According to another aspect of the present invention, a high-pressure substrate processing device may include: an internal chamber formed to accommodate a processing gas containing processing gaseous hydrogen oxide and having a processing pressure higher than atmospheric pressure, and a substrate to be processed by the processing gas; an external chamber formed to accommodate the internal chamber, for accommodating a protective gas having a protective pressure set relative to the processing pressure; a generation module formed to react hydrogen with oxygen to produce generated hydrogen oxide, the generation pressure of the generated hydrogen oxide being lower than the processing pressure; and a conversion module formed to pressurize the generated hydrogen oxide and convert it into the processing gaseous hydrogen oxide having the processing pressure.

[0014] Here, the conversion module may include an auxiliary gas line, which injects auxiliary gas into the internal chamber in addition to the gaseous hydrogen oxide obtained from the generated hydrogen oxide, so that the gaseous hydrogen oxide obtained from the generated hydrogen oxide in the internal chamber reaches the processing pressure.

[0015] Here, it may be that the conversion module includes a vaporization heater formed to vaporize liquid hydrogen oxide obtained from the generated hydrogen oxide to generate the treated gaseous hydrogen oxide.

[0016] Here, it may be that any one of the generation module and the conversion module further includes a water tank, the water tank is formed to contain the liquid hydrogen oxide obtained from the generation of hydrogen oxide, and is connected to the vaporization heater.

[0017] Here, the conversion module may further include a pump, which is disposed between the water tank and the vaporization heater and is configured to pressurize the liquid hydrogen oxide obtained from the generated hydrogen oxide and pump the pressurized liquid hydrogen oxide to the internal chamber.

[0018] Here, the conversion module may further include: a discharge line formed to discharge unreacted gas that has not participated in the reaction between the hydrogen and the oxygen from the water tank; and an injection line formed to inject a purge gas for purging the unreacted gas into the water tank.

[0019] Here, it may be that the method further includes a heating module disposed in the external chamber and configured to heat the processing gas to a processing temperature, and the vaporization heater is disposed in the external chamber.

[0020] According to another aspect of the present invention, a high-pressure gaseous hydrogen oxide providing device for a high-pressure substrate processing device may include: a generation module, which allows hydrogen and oxygen to react to produce generated hydrogen oxide, and the generation pressure of the generated hydrogen oxide is lower than the processing pressure of the substrate to be processed in the high-pressure substrate processing device; and a conversion module, which is formed to pressurize the generated hydrogen oxide and convert it into processed gaseous hydrogen oxide having the processing pressure, and the processing pressure is a pressure higher than atmospheric pressure.

[0021] Here, the conversion module may include an auxiliary gas pipeline, which, in the high-pressure substrate processing device, injects auxiliary gas into a processing chamber where the substrate to be processed is arranged, in addition to the gaseous hydrogen oxide obtained from the generated hydrogen oxide, so that the gaseous hydrogen oxide obtained from the generated hydrogen oxide in the processing chamber reaches the processing pressure.

[0022] Here, the conversion module may include a vaporization heater configured to vaporize the liquid hydrogen oxide obtained from the generated hydrogen oxide to generate the treated gaseous hydrogen oxide.

[0023] Here, one of the generation module and the conversion module may further include a water tank, the water tank is formed to contain liquid hydrogen oxide obtained from the generation of hydrogen oxide, and is connected to the vaporization heater.

[0024] Here, the conversion module may further include a pump, which is disposed between the water tank and the vaporization heater and is configured to pressurize the liquid hydrogen oxide obtained from the generated hydrogen oxide and pump the pressurized liquid hydrogen oxide to the internal chamber.

[0025] Effects of the Invention

[0026] According to the high-pressure gaseous hydrogen oxide supplying device of the present invention constructed as described above, the high-pressure substrate processing device and method using the same, after obtaining generated hydrogen oxide having a first pressure by reacting hydrogen and oxygen, the generated hydrogen oxide is converted into processed gaseous hydrogen oxide having a second pressure higher than the first pressure and atmospheric pressure to act on the substrate to be processed in the processing chamber, thereby eliminating the concern that impurities such as silicon dioxide may contaminate the substrate during the high-pressure process.

[0027] In addition, in the process of ensuring the treatment of gaseous hydrogen oxide, the generation of unreacted gas that does not participate in the reaction of hydrogen and oxygen can be prevented. Even if unreacted gas is generated, the risk of explosion caused by unreacted gas during the process can be prevented by removing the unreacted gas. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 is a conceptual diagram of a high voltage substrate processing apparatus according to an embodiment of the present invention.

[0029] Figure 2 It is used to illustrate Figure 1 A block diagram of a control structure of a high voltage substrate processing apparatus.

[0030] Figure 3 yes Figure 2 Conceptual diagram of the generation module.

[0031] Figure 4 is a conceptual diagram showing a generation module and a conversion module according to another embodiment of the present invention.

[0032] Figure 5 yes Figure 4 Cross-sectional view of the water tank.

[0033] Figure 6 is a conceptual diagram showing a generation module and a conversion module according to another embodiment of the present invention.

[0034] Figure 7 is a flow chart showing a high voltage substrate processing method according to yet another embodiment of the present invention.

[0035] Figure 8 is shown with Figure 6 A flowchart of a specific processing example associated with a step.

[0036] Fig. 9 is shown with Figure 6 Flow chart of another specific processing example associated with a step

[0037] (Explanation of Reference Numerals)

[0038] 100: High-voltage substrate processing device 110: Internal chamber

[0039] 120: External chamber 130: Air intake module

[0040] 140: Exhaust module 150: Heating module

[0041] 160, 160`: generation module 170, 170A, 170B: conversion module 180: sensing module, 190: control module DETAILED DESCRIPTION

[0042] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0043] The present invention is not limited to the embodiments disclosed below, and various modifications may be applied, and may be implemented in various different forms. This embodiment is provided only to make the disclosure of the present invention complete and to fully inform people with ordinary knowledge of the scope of the invention. Therefore, it should be understood that the present invention is not limited to the embodiments disclosed below, and not only includes replacing or adding the structure of a certain embodiment to the structure of other embodiments, but also includes all modifications, equivalents and even substitutes included in the technical spirit and scope of the present invention.

[0044] It should be understood that the drawings are only for the purpose of facilitating the understanding of the embodiments disclosed in this specification, and the drawings do not limit the technical spirit disclosed in this specification, including all deformations, equivalents and even substitutes included in the concept and technical scope of the present invention. In the drawings, the size or thickness of the components may be excessively enlarged or reduced for the convenience of understanding, but the protection scope of the present invention shall not be limited thereby.

[0045] The terms used in this specification are used only to illustrate specific implementation examples or embodiments, and are not intended to limit the present invention. In addition, unless otherwise specified in the context, singular expressions include plural expressions. The terms "including to", "consisting of to" and the like in the specification are used to specify the existence of features, numbers, steps, operations, constituent elements, devices or combinations thereof recorded in the specification. That is, it should be understood that the terms "including to", "consisting of to" and the like in the specification do not exclude the existence or additional possibility of one or more other features or numbers, steps, operations, constituent elements, devices or combinations thereof in advance.

[0046] Terms including ordinal numbers such as first and second may be used to describe various components, but the components are not limited by the terms. The terms are used only for the purpose of distinguishing one component from other components.

[0047] When it is mentioned that a certain component is "connected / communicated" or "connected" to another component, it should be understood that it can be directly connected / communicated or connected to the other component, or there can be other components in between. Conversely, when it is mentioned that a certain component is "directly connected / communicated" or "directly connected" to another component, it should be understood that there are no other components in between.

[0048] When it is mentioned that a certain component is “located “on” or “under” another component, it should be understood that the component is not only disposed directly on the other component but also that there may be other components in between.

[0049] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as generally understood by a person having ordinary knowledge in the technical field to which the present invention belongs. Terms such as those defined in commonly used dictionaries should be interpreted as having the same meaning as that in the context of the relevant technology, and should not be interpreted as having an ideal or excessive formal meaning when not clearly defined in this application.

[0050] Figure 1 This is a conceptual diagram of a high voltage substrate processing apparatus according to an embodiment of the present invention.

[0051] Reference Figure 1 The high-pressure substrate processing apparatus 100 may include an inner chamber 110 , an outer chamber 120 , an intake module 130 , and an exhaust module 140 .

[0052] The internal chamber 110 forms a processing chamber for accommodating a substrate for processing. The internal chamber 110 can be made of non-metallic materials, such as quartz, to reduce contamination in a high temperature and high pressure working environment. Although simplified in the drawings, an inner door (not shown) for opening the processing chamber is provided at the lower end of the internal chamber 110. When the inner door descends, the processing chamber is opened and the substrate can be put into the processing chamber. By operating a heater (not shown) configured outside the internal chamber 110, the temperature of the internal chamber 110 can reach hundreds to thousands of degrees Celsius. The substrate can be, for example, a wafer for manufacturing semiconductors. The wafer can be made of materials such as Si, SiC, GaN, etc. The substrate is not limited to the wafer, and the basic structure for manufacturing circuits can be used. For example, the substrate can also include glass for manufacturing displays. The fixture can be a boat capable of stacking multiple layers of substrates to be processed.

[0053] The external chamber 120 is arranged to accommodate the internal chamber 110. Unlike the internal chamber 110, the external chamber 120 is not affected by the contamination caused to the substrate, and thus can be made of a metal material. The external chamber 120 is hollow and has a storage space for accommodating the internal chamber 110. The external chamber 120 is also provided with an outer door (not shown) at the bottom, and the outer door can be lowered together with the inner door to open the storage space. The internal chamber 110 can be placed in the external chamber 120.

[0054] The gas inlet module 130 is a structure for supplying gas to the internal chamber 110 and the external chamber 120. The gas inlet module 130 may have a gas supplier 131 connected to the utility (gas supply facility) of the substrate processing factory. The gas supplier 131 may selectively provide, for example, hydrogen (H2), deuterium (D2), gaseous hydrogen oxide, fluorine (F2), ammonia (NH3), chlorine (Cl2), nitrogen (N2), etc. as a processing gas to the internal chamber 110. The gaseous hydrogen oxide may be used for wet oxidation (Wet Oxidation), ALD (Atomic Layer Deposition), CVD (Chemical Vapor Deposition), and thermal treatment (Annealing). The gas supplier 131 may provide, for example, nitrogen or argon (Ar) as an inert gas as a protective gas to the external chamber 120. The processing gas and the protective gas may be referred to as process gas. The process gases are each supplied to the inner chamber 110 or the outer chamber 120 through the process gas line 133 or the protective gas line 135. The protective gas supplied to the outer chamber 120 is specifically supplied to other spaces (protective spaces) in the outer chamber 120 except for the inner chamber 110.

[0055] The process gas, as a pressure higher than the atmospheric pressure (high pressure), can be supplied to the chambers 110, 120 to form a pressure of several atmospheres to tens of atmospheres, for example. The pressure of the process gas, i.e., the process pressure, and the pressure of the protective gas, i.e., the protective pressure, can maintain a set relationship. For example, the protective pressure can be set to be substantially the same as or slightly larger than the process pressure. The pressure relationship provides the advantage of preventing the process gas from leaking from the internal chamber 110 and preventing the internal chamber 110 from breaking. The protective pressure can be set to be slightly lower than the process pressure, in which case a similar effect as described above can also be achieved.

[0056] The exhaust module 140 is a structure for exhausting the process gas. In order to exhaust the process gas from the internal chamber 110, an exhaust pipe 141 is connected to the upper part of the internal chamber 110. In order to exhaust the protective gas from the external chamber 120, similarly, there may be an exhaust pipe 145 connected to the external chamber 120. These exhaust pipes 141 and 145 are combined into one, so that the process gas is diluted by the protective gas during the exhaust process, so that the concentration becomes lower.

[0057] Reference Figure 2 The control structure of the high-voltage substrate processing apparatus 100 will be described. Figure 2 It is used to illustrate Figure 1 A block diagram of a control structure of a high voltage substrate processing apparatus.

[0058] Reference Figure 2 (as well as Figure 1 ), in addition to the above-mentioned intake module 130 and exhaust module 140, the high-voltage substrate processing device 100 may also include a heating module 150, a generation module 160, a conversion module 170, a sensing module 180, a control module 190, and a storage module 195.

[0059] The heating module 150 is a structure including the above-mentioned heater, and the heater may be disposed in the outer chamber 120 to face the inner chamber 110 .

[0060] The generation module 160 is a structure for generating hydrogen oxide. Hydrogen oxide is a molecule formed by the combination of oxygen and hydrogen, and may include H2O, H2O2, H2O3, etc. Since the hydrogen oxide is generated by the generation module 160, it may be referred to as generated hydrogen oxide. The generated hydrogen oxide may be gaseous hydrogen oxide or liquid hydrogen oxide. The former may be referred to as generated gaseous hydrogen oxide, and the latter may be referred to as generated liquid hydrogen oxide. The generated hydrogen oxide has a generation pressure. The generation pressure may be higher than or equal to normal pressure, and may specifically be several to several tens of atmospheric pressures. The generation pressure may be lower than the processing pressure.

[0061] The conversion module 170 is a structure for converting the generated hydrogen oxide into gaseous hydrogen oxide (processed gaseous hydrogen oxide) that acts on the substrate in the process chamber. To this end, the conversion module 170 can pressurize the generated hydrogen oxide to increase the generated pressure to the process pressure.

[0062] The conversion module 170 and the generation module 160 may also be referred to as a high-pressure gaseous hydrogen oxide supplier because they cooperate to provide high-pressure gaseous hydrogen oxide (the process gaseous hydrogen oxide) to the process chamber. The high-pressure gaseous hydrogen oxide supplier may operate in association with the gas inlet module 130. Specifically, the high-pressure gaseous hydrogen oxide supplier may be installed in the process gas pipeline 133 or may be installed to communicate with the process gas pipeline 133.

[0063] The sensing module 180 is a structure for sensing the environment of the chambers 110 and 120. The sensing module 180 may include a pressure gauge 181 and a thermometer 185. The pressure gauge 181 and the thermometer 185 may be installed in each chamber 110 and 120. The sensing module 180 may also include a gas detector (not shown) to sense a specific gas.

[0064] The control module 190 is a structure for controlling the intake module 130 and the exhaust module 140 , etc. The control module 190 may control the operation of the intake module 130 , etc., based on the sensing result of the sensing module 180 .

[0065] The storage module 195 is a structure for storing data, programs, etc. that the control module 190 can refer to for control.

[0066] According to the structure, the control module 190 can control the operation of the gas intake module 130 and the high-pressure gaseous hydrogen oxide providing device based on the pressure of the chambers 110 and 120 obtained by the pressure gauge 181. According to the operation of the gas intake module 130 and the high-pressure gaseous hydrogen oxide providing device, the process gas can fill the process chamber at the process pressure. The protective space can be filled with the protective gas at the protective pressure.

[0067] The control module 190 may also control the operation of the exhaust module 140 based on the pressure in the chambers 110, 120 obtained by the pressure gauge 181. According to the operation of the exhaust module 140, the process gas may be exhausted from the process chamber. The protective gas may be exhausted from the protective space.

[0068] The control module 190 may control the operation of the heating module 150 based on the temperature of the chambers 110 and 120 obtained through the thermometer 185. According to the operation of the heating module 150, the process gas may reach a process temperature for processing the substrate.

[0069] Reference Figures 3 to 6The specific structures of the generation module 160 and the conversion module 170 are described. In the following, for the convenience of description, H2O is used as an example to describe the hydrogen peroxide, but such description is also applicable to H2O2 and the like. The gaseous state of H2O is water vapor, and the liquid state is water. Therefore, the generated gaseous hydrogen peroxide can be referred to as generated water vapor, and the generated liquid hydrogen peroxide can be referred to as generated water.

[0070] first, Figure 3 It is shown Figure 2 Conceptual diagram of the generation module.

[0071] Reference Figure 3 The generation module 160 is configured to generate gaseous hydrogen oxide (water vapor) using gas as a starting material. The method of using gas is different from the method of using liquid hydrogen oxide (water) as a starting material to obtain water vapor. By adopting the method of using gas, the inventors confirmed that the generated H2O does not contain impurities (silicon dioxide).

[0072] The generating module 160 may specifically include: a housing 161 , input parts 162 , 163 , a reaction part 165 , a sensing part 166 , an ejection part 167 , and a guide line 169 .

[0073] The housing 161 is a structure having an internal space for accommodating the reaction unit 165 described later. The housing 161 may be manufactured in a sealed form to prevent gas leakage. The gas leaked from the reaction unit 165 in the housing 161 may be sensed by a sensor (not shown), and may be pumped to the outside of the housing 161 and then discharged. The internal space of the housing 161 may be filled with an inert gas, such as nitrogen, or may be purged with nitrogen.

[0074] The input parts 162 and 163 are from the gas supply device 131 (see Figure 1 ) structure for receiving gas. Oxygen (O2) is input into one input part 162 of the input parts 162 and 163, and hydrogen H2 is input into the other input part 163. As needed, other substances besides the oxygen and the hydrogen can also be input into the input parts 162 and 163. The pipeline for supplying the hydrogen to the other input part 163 can be formed as a double pipeline. The hydrogen flows in the inner tube of the double pipeline, and a sensor for detecting the leakage of the hydrogen can be installed on the outside (not shown in the figure). When the hydrogen leaks, the hydrogen can be discharged from the internal space of the outside. The device for discharging the hydrogen can be filled with inert gas, for example, for explosion prevention. The leakage of the hydrogen may be linked to the interlock (interlock) of the high-voltage substrate processing device 100.

[0075] The reaction part 165 is a structure for reacting the oxygen gas and the hydrogen gas to generate the generated H 2 O. The reaction part 165 may maintain a temperature and a pressure suitable for the reaction.

[0076] The sensing unit 166 is a structure for obtaining information related to the generation of H2O. For example, the sensing unit 166 can be used to sense the temperature and pressure of the generated hydrogen oxide. The sensing unit 166 can also sense unreacted gas (NG, see Figure 5 ). Unreacted gas (NG) refers to gas that does not participate in the reaction between the oxygen and the hydrogen. Hydrogen as unreacted gas (NG) is explosive and may need to be managed.

[0077] The discharge portion 167 is a structure for discharging a discharge. The inventors have confirmed that at a pressure less than a reference pressure, the discharge is mainly the generated H2O. The inventors have also confirmed that above the reference pressure, unreacted gas (NG) may be slightly mixed into the discharge. The reference pressure may specifically be several atmospheres. The discharge may be a mixture of the generated H2O and unreacted gas (NG). Depending on the phase of the generated H2O, the discharge may be a gas or a mixture of a gas and a liquid.

[0078] The guide line 169 is a structure for guiding the generated H2O to the inner chamber 110. The guide line 169 may be the aforementioned process gas line 133 (see Figure 1 ) or forming part thereof.

[0079] When only gas (exhaled gas) is exhaled as the exhaled material, the conversion module 170 (see Figure 2 ) may have an auxiliary gas pipeline (not shown) for injecting auxiliary gas into the internal chamber 110. The auxiliary gas is injected into the internal chamber 110 to increase the pressure of the generated H2O, specifically the generated water vapor, and may form a part of the processing gas. The auxiliary gas may be an inert gas, such as nitrogen.

[0080] The auxiliary gas pipeline can be supplied from the gas supply 131 (see Figure 1 ) receives the auxiliary gas. The auxiliary gas line is connected to the guide line 169 at the rear end of the housing 161, and the auxiliary gas can be supplied to the internal chamber 110 through the guide line 169. In an alternative embodiment, the auxiliary gas line can be configured to mix the auxiliary gas into the oxygen, the hydrogen, or the generated H2O in the housing 161.

[0081] According to the configuration, when the generation module 160 is operated below the reference pressure, the discharge is substantially composed of the generated water vapor, with almost no unreacted gas (NG). Since there is no concern about the presence of unreacted gas (NG) in such discharge, the generated water vapor can be directly supplied to the internal chamber 110 without any other processing. However, since the generation pressure is lower than the processing pressure, the auxiliary gas can pressurize the generated water vapor and convert it into the processing water vapor.

[0082] In an alternative embodiment, the generated water vapor (with almost no unreacted gas (NG)) may be compressed by a compressor (not shown) before being injected into the internal chamber 110. In this case, the generated water vapor may be pressurized to the process pressure to become the process water vapor. The process water vapor may act on the substrate at the process pressure without the assistance of the auxiliary gas.

[0083] Different from the above, when the generation module 160 operates above the reference pressure, the output may include the generated H2O and unreacted gas (NG). In this case, the unreacted gas (NG) needs to be removed, and a new conversion module 170A may be used for this purpose.

[0084] then, Figure 4 is a block diagram showing a generation module and a conversion module according to another embodiment of the present invention. Figure 4 In the embodiment, the generating module 160 is the same as that in the previous embodiment, and therefore, is simply represented as a box in the figure.

[0085] Further references Figure 4 The conversion module 170A is a structure that converts the generated H2O into the treated water vapor, and can also remove unreacted gas (NG) during the conversion process. To this end, the conversion module 170A can adopt a structure that performs phase conversion on the generated H2O (specifically, the generated water vapor).

[0086] The conversion module 170A may include a water tank 171 , a pump 175 , and a vaporization heater 179 .

[0087] The water tank 171 is a structure for containing the resultant product produced after the vomit is liquefied. When the water tank 171 is placed in a room temperature environment, the vomit can be liquefied in the water tank 171 without the need for other cooling equipment. The resultant product includes condensed water (CW, see Figure 5). The condensed water (condensed liquid hydrogen oxide) together with the generated water (generated liquid hydrogen oxide) may be referred to as water (liquid hydrogen oxide) obtained from the generated H2O (generated hydrogen oxide). The resultant may also include unreacted gas (NG). Figure 5 The specific structure of the water tank 171 will be described.

[0088] Referring again to the accompanying drawings, pump 175 is a structure for pumping condensed water (CW). Condensed water (CW) can be pumped to the processing chamber. Condensed water (CW) can also be pumped after being pressurized to several or several tens of atmospheric pressures. Pump 175 can be configured between water tank 171 and vaporization heater 179.

[0089] The vaporization heater 179 is a structure that vaporizes the condensed water (CW) to generate water vapor (acquired water vapor). To this end, the vaporization heater 179 heats the condensed water (CW). The acquired water vapor can be supplied to the processing chamber along the guide line 169 to become the processing water vapor. The acquired water vapor can be further pressurized or mixed with the auxiliary gas to become the processing water vapor. The acquired water vapor together with the generated water vapor can be called water vapor (gaseous hydrogen oxide) obtained from generating H2O (generating hydrogen oxide).

[0090] The vaporizing heater 179 may be disposed in the outer chamber 120 (see Figure 1 ). In an alternative embodiment, the vaporization heater 179 may be located inside the external chamber 120, i.e., in the protection space. In this case, the vaporization heater 179 is placed in an environment with a higher temperature than the outside of the external chamber 120, and therefore, can operate while consuming less energy. In another alternative embodiment, the vaporization heater 179 is installed in the main body of the internal chamber 110 (e.g., the inner door), and the condensed water (CW) may also be vaporized by the vaporization heater 179 when flowing into the processing chamber through the main body.

[0091] Figure 5 It is shown Figure 4 Cross-section of the water tank.

[0092] Reference Figure 5 , the water tank 171 may have a shell 172 defining an internal space. The spit is liquefied, separated into condensed water (CW) and unreacted gas (NG), and contained in the internal space. Specifically, the condensed water (CW) may be located at the lower part of the internal space, and the unreacted gas (NG) may be located at the upper part of the internal space. Since the unreacted gas (NG) and the condensed water (CW) are separated from each other, they occupy different spaces from each other.

[0093] The spitted material can be spit out to the housing 172 through the spitting line 173a. The condensed water (CW) can be sucked into the pump 175 through the suction line 173b. One end of the suction line 173b is connected to the pump 175, and the other end, i.e., the suction port 173b', can be placed in the condensed water (CW). Since the suction port 173b' is set in the condensed water (CW), the unreacted gas (NG) will not be sucked into the pump 175 through the suction line 173b.

[0094] The condensed water (CW) is supplied to the inner chamber 110 through the pump 175 and the vaporization heater 179, but the unreacted gas (NG) is separated from the condensed water (CW) and is not supplied to the inner chamber 110. The unreacted gas (NG) may be discharged to the outside of the inner space through the exhaust line 174a.

[0095] In order to more actively separate / remove the unreacted gas (NG) from the condensed water (CW), a purge gas may be injected into the inner space through the injection line 174b. Since the purge gas purges the unreacted gas (NG) in the inner space, the unreacted gas (NG) may be discharged more smoothly through the exhaust line 174a. The purge gas may be, for example, nitrogen, i.e., an inert gas.

[0096] Figure 6 is a conceptual diagram showing a generation module and a conversion module according to another embodiment of the present invention.

[0097] Reference Figure 6 , the generation module 160 'is the same as the aforementioned generation module 160 (see Figure 4 ) is basically the same as the above-mentioned water tank 171 (see FIG. 1 ). The difference is that it has a water tank 168'. When the generated H2O is the generated water, the water tank 168' can contain the generated water (and the unreacted gas). The water tank 168' can have the same structure as the above-mentioned water tank 171 (see FIG. 1 ). Figure 5 ) have basically the same structure.

[0098] The conversion module 170B is substantially the same as the aforementioned conversion module 170A, but differs in that it does not have a water tank 171 .

[0099] According to the structure, the effluent may contain only the generated water, or may contain the generated water and the unreacted gas. As described above, the generated water and the unreacted gas may be separated in the water tank 168'. The pump 175 may pressurize the generated water from the water tank 168' and pump it to the vaporization heater 179. The unreacted gas may also be purged in the water tank 168'.

[0100] Next, we will refer to Figures 7 to 9 (as well as Figures 1 to 6) describes a high voltage substrate processing method.

[0101] Figure 7 is a flow chart showing a high voltage substrate processing method according to another embodiment of the present invention.

[0102] Further references Figure 7 The control module 190 controls the generation module 160 to react hydrogen and oxygen (S1).

[0103] The generation module 160 discharges an output generated by the reaction between the hydrogen gas and the oxygen gas, wherein the output includes H2O having a first pressure (generation pressure) (S3).

[0104] The control module 190 controls the conversion module 170 to convert the generated H2O into a treated water vapor having a second pressure (treatment pressure) (S5). Specifically, the control module 190 can control the conversion module 170 to inject the generated H2O (specifically, the generated water vapor) into the treatment chamber, and can also inject the auxiliary gas. The auxiliary gas and the generated water vapor together make the treatment chamber reach the second pressure (first conversion mode). The second pressure is a pressure higher than the first pressure and atmospheric pressure, for example, it can be from several atmospheric pressures to tens of atmospheric pressures.

[0105] The treatment water vapor acts on the substrate in the treatment chamber (S7). The substrate is wet oxidized, heat treated, etc. by the treatment water vapor.

[0106] Figure 8 is shown with Figure 6 A flowchart of a specific processing example associated with a step.

[0107] Further references Figure 8 , differently from the foregoing, the step of converting into the treated water vapor (S5) may be performed using a phase change.

[0108] Specifically, when the discharged gas is liquefied, condensed water (CW) is obtained in the water tank 171 ( S11 ).

[0109] The control module 190 determines whether the condensed water (CW) needs to be pressurized (S13). This determination may differ depending on the pressure of the condensed water (CW).

[0110] When pressurization is required, the control module 190 controls the pump 175 to pressurize the condensed water (CW) (S15). The pressurization of the condensed water (CW) may be performed before it is vaporized.

[0111] The control module 190 also controls the vaporization heater 179 to heat the condensed water (CW) (S17). The heated condensed water (CW) may become the process water vapor having the second pressure (second conversion mode).

[0112] In an alternative embodiment, if the generated H 2 O is the generated water, the generated water may be pressurized instead of condensed ( S13 and S15 ) and vaporized ( S17 ).

[0113] Fig. 9 is shown with Figure 6 A flowchart of another specific processing example associated with a step.

[0114] Reference Fig. 9 In the step (S5) of converting into the treated water vapor, unreacted gas (NG) is also removed.

[0115] Specifically, when the mixture is accommodated in the water tanks 168 ′, 171 , unreacted gas (NG) may be separated from the produced water or condensed water (CW) ( S21 ).

[0116] The control module 190 determines whether the unreacted gas (NG) needs to be removed according to the amount of the unreacted gas (NG) (S23). When the unreacted gas (NG) is greater than the aforementioned reference amount, the control module 190 may determine that it needs to be removed.

[0117] In order to actively remove the unreacted gas (NG), the control module 190 can control the air intake module 130 to inject the purge gas into the water tanks 168' and 171 (S25). As a result, the unreacted gas (NG) can be discharged to the outside from the water tanks 168' and 171. As a result, it can be ensured that the unreacted gas (NG) will not be injected into the processing chamber.

[0118] In this specification, a processing device having a double chamber is cited as an example of the high-pressure substrate processing device 100, but the present invention is not limited thereto. The high-pressure gaseous hydrogen oxide supply device can also be applied to a processing device having a single chamber. The single chamber is composed of a housing and a door. A wafer substrate is arranged in the chamber, and a gas for processing the wafer substrate is supplied.

[0119] The structure of the high-voltage substrate processing device 100 can also be applied to a semi-double chamber which is an intermediate form between the double chamber and the single chamber. The semi-double chamber can have two shells (an inner shell and an outer shell) and a door. The two shells can be combined according to their own shapes or in the state of another intervening component to form a closed space (corresponding to the protective space). Similar to the aforementioned embodiment, the substrate can be arranged in the processing chamber of the internal shell and the processing gas can be injected, and the protective gas can be injected into the closed space. Unlike the aforementioned embodiment, the door is not completely protected by the protective gas, but leaks to the outside. The door can correspond to the aforementioned external door. The door can be used to open and close the internal shell (and the external shell).

[0120] In this specification, a batch type processing apparatus is exemplified, but the present invention is not limited thereto and can also be applied to a single wafer type processing apparatus.

Claims

1. A high voltage substrate processing method, wherein: include: a step of reacting hydrogen and oxygen; A step of obtaining generated hydrogen peroxide having a first pressure; The step of converting the produced hydrogen oxide into treated gaseous hydrogen oxide having a second pressure higher than the first pressure and atmospheric pressure; and The step of allowing the treatment gaseous hydrogen oxide to act on the substrate to be treated in the treatment chamber.

2. The high voltage substrate processing method according to claim 1, wherein: The step of converting the generated hydrogen oxide into treated gaseous hydrogen oxide having a second pressure higher than the first pressure and the atmospheric pressure comprises: injecting an auxiliary gas into the process chamber in addition to the gaseous hydrogen oxide obtained from the generated hydrogen oxide so that the gaseous hydrogen oxide obtained from the generated hydrogen oxide reaches the second pressure in the process chamber.

3. The high voltage substrate processing method according to claim 1, wherein: The step of converting the produced hydrogen oxide into treated gaseous hydrogen oxide having a second pressure higher than the first pressure and the atmospheric pressure comprises: A step of obtaining liquid hydrogen peroxide from said generated hydrogen peroxide; a step of pressurizing the liquid hydrogen peroxide; and The pressurized liquid hydrogen oxide is vaporized to obtain the step of treating the gaseous hydrogen oxide.

4. A high voltage substrate processing device, wherein: include: an inner chamber formed to contain a process gas containing process gaseous hydrogen oxide and having a process pressure higher than atmospheric pressure, and a substrate to be processed by the process gas; an outer chamber formed to receive the inner chamber and configured to receive a shielding gas having a shielding pressure set relative to the process pressure; a generation module configured to react hydrogen with oxygen to generate generated hydrogen oxide, wherein the generation pressure of the generated hydrogen oxide is lower than the process pressure; and The conversion module is configured to pressurize the generated hydrogen oxide and convert it into the treated gaseous hydrogen oxide having the treated pressure.

5. The high voltage substrate processing apparatus according to claim 4, wherein: The conversion module includes an auxiliary gas line that injects auxiliary gas into the internal chamber in addition to gaseous hydrogen oxide obtained from the generated hydrogen oxide, thereby bringing the gaseous hydrogen oxide obtained from the generated hydrogen oxide to the process pressure in the internal chamber.

6. The high voltage substrate processing apparatus according to claim 4, wherein: The conversion module includes a vaporization heater formed to vaporize liquid hydrogen oxide obtained from the produced hydrogen oxide to produce the treated gaseous hydrogen oxide.

7. The high voltage substrate processing apparatus according to claim 6, wherein: Any one of the generation module and the conversion module further includes a water tank formed to contain liquid hydrogen oxide obtained from the generation of hydrogen oxide and communicated with the vaporization heater.

8. The high voltage substrate processing apparatus according to claim 7, wherein: The conversion module further includes a pump disposed between the water tank and the vaporization heater and configured to pressurize and pump the liquid hydrogen oxide obtained from the generated hydrogen oxide to the internal chamber.

9. The high voltage substrate processing apparatus according to claim 7, wherein: The conversion module further includes: an exhaust line formed to exhaust an unreacted gas that does not participate in a reaction between the hydrogen gas and the oxygen gas from the water tank; and An injection line is formed to inject a purge gas for purging the unreacted gas into the water tank.

10. The high voltage substrate processing apparatus according to claim 6, wherein: Also included is a heating module disposed in the external chamber, for heating the processing gas to a processing temperature, The vaporizing heater is disposed in the outer chamber.

11. A high-pressure gaseous hydrogen oxide supply device for a high-pressure substrate processing device, wherein: include: A generating module, which reacts hydrogen with oxygen to generate generated hydrogen oxide, wherein the generating pressure of the generated hydrogen oxide is lower than the processing pressure of the substrate to be processed in the high-pressure substrate processing apparatus; and a conversion module, which is configured to pressurize the generated hydrogen oxide and convert it into treated gaseous hydrogen oxide having the treatment pressure, The treatment pressure is a pressure higher than atmospheric pressure.

12. The high-pressure gaseous hydrogen oxide supply device for a high-pressure substrate processing device according to claim 11, wherein: The conversion module includes an auxiliary gas pipeline, which, in the high-pressure substrate processing apparatus, injects auxiliary gas into a processing chamber in which the substrate to be processed is arranged, in addition to the gaseous hydrogen oxide obtained from the generated hydrogen oxide, so that the gaseous hydrogen oxide obtained from the generated hydrogen oxide in the processing chamber reaches the processing pressure.

13. The high-pressure gaseous hydrogen oxide supply device for a high-pressure substrate processing device according to claim 11, wherein: The conversion module includes a vaporization heater formed to vaporize liquid hydrogen oxide obtained from the produced hydrogen oxide to produce the treated gaseous hydrogen oxide.

14. The high-pressure gaseous hydrogen oxide supply device for a high-pressure substrate processing device according to claim 13, wherein: One of the generation module and the conversion module further includes a water tank formed to contain liquid hydrogen oxide obtained from the generation of hydrogen oxide and communicated with the vaporization heater.

15. The high-pressure gaseous hydrogen oxide supply device for a high-pressure substrate processing device according to claim 14, wherein: The conversion module further includes a pump disposed between the water tank and the vaporization heater and configured to pressurize and pump the liquid hydrogen oxide obtained from the generated hydrogen oxide to the internal chamber.

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