High-reliability multi-channel three-dimensional heterogeneous integrated microsystem

Abstract

The invention discloses a multi-channel three-dimensional heterogeneous and heterogeneous integrated microsystem with high reliability. Comprising a top-layer silicon-based adapter plate upper solder ball, a top-layer silicon-based adapter plate, a top-layer silicon-based adapter plate inner silicon through hole, a top-layer silicon-based adapter plate lower surface frequency selection structure, a middle-layer silicon-based adapter plate, a middle-layer silicon-based adapter plate silicon through hole, a low-power-consumption chip device, a bottom-layer silicon-based adapter plate upper surface rewiring and a bottom-layer silicon-based adapter plate inner silicon through hole. The high-power chip device comprises a bottom-layer silicon-based adapter plate, a bottom-layer silicon-based adapter plate lower surface solder ball, a high-temperature co-fired ceramic substrate, a high-temperature co-fired ceramic substrate lower surface frequency selection structure, a direct copper-plated ceramic substrate box dam, a high-power chip device, a direct copper-plated ceramic substrate and a high-thermal-conductivity material. And the frequency selection structures are respectively arranged right above the low-power-consumption chip device and the high-power chip device, are metal structures and are used for absorbing electromagnetic waves under a specific frequency. The electromagnetic stability of the system can be improved, the thermal conductivity of the system is improved, and the reliability of the system is integrally improved.

Description

Technical Field

[0001] The present invention belongs to the field of radio frequency microsystem packaging, and in particular relates to a high-reliability multi-channel three-dimensional heterogeneous heterogeneous integrated microsystem. Background Art

[0002] As an advanced integrated packaging technology under the trend of system miniaturization, RF microsystem integration technology has become a major basic technology that leads equipment development and promotes electronic technology innovation. It is an important technical platform that supports the transformation of electronic information equipment capabilities in the fields of sensing and communication. It is also one of the core technologies in current electronic information technology research.

[0003] RF integrated microsystem technology has achieved the integration of chips of different materials and different functions inside the same smaller package area, which greatly reduces the size of the RF module. It has the advantages of lightweight, high integration, high performance and low cost. However, as the size is reduced, it also brings many problems that need to be solved.

[0004] Inside the RF microsystem, there are no partitions between chips as in traditional components to serve as electromagnetic shielding layers. At the same time, due to the limited height of the internal cavity of the silicon-based three-dimensional microsystem, it is impossible to reduce the cavity effect and electromagnetic wave interference by attaching absorbing materials. This can easily lead to problems such as self-excitation inside the RF microsystem module and serious mutual coupling between channels. Moreover, there is no debugging method after the silicon-based three-dimensional microsystem packaging is completed, so once the electromagnetic interference problem occurs, it cannot be solved. In addition, while the packaging volume is reduced, the power density per unit volume of the system is getting higher and higher. The thermal conductivity of the silicon-based RF microsystem is poor, and there are reliability issues for RF microsystems with high power requirements. Summary of the invention

[0005] The purpose of the present invention is to provide a high-reliability multi-channel three-dimensional heterogeneous heterogeneous integrated microsystem to address the problems existing in the background technology, which can improve the electromagnetic stability of the system, enhance the thermal conductivity of the system, and improve the reliability of the system as a whole.

[0006] In order to achieve the above-mentioned purpose, one aspect of the present invention provides a high-reliability multi-channel three-dimensional heterogeneous integrated microsystem, including solder balls on a top silicon-based adapter board, a top silicon-based adapter board, silicon through holes in the top silicon-based adapter board, a frequency selection structure on the bottom surface of the top silicon-based adapter board, an intermediate silicon-based adapter board, silicon through holes on the intermediate silicon-based adapter board, a low-power chip device, upper surface rewiring of a bottom silicon-based adapter board, silicon through holes in the bottom silicon-based adapter board, a bottom silicon-based adapter board, solder balls on the bottom surface of the bottom silicon-based adapter board, a high-temperature co-fired ceramic substrate, a frequency selection structure on the bottom surface of the high-temperature co-fired ceramic substrate, a direct copper-plated ceramic substrate dam, a high-power chip device, a direct copper-plated ceramic substrate, and a high thermal conductivity material;

[0007] The top silicon-based adapter board, the middle silicon-based adapter board and the bottom silicon-based adapter board constitute a silicon-based package, the high-temperature co-fired ceramic substrate, the direct copper-plated ceramic substrate dam and the direct copper-plated ceramic substrate constitute a ceramic package, the low-power chip device is placed on the bottom silicon-based adapter board, bonded to the upper surface of the bottom silicon-based adapter board by gold wires and then wired to achieve intra-layer signal interconnection, the signal interconnection between the silicon-based package and the ceramic package is achieved through silicon-through holes in the bottom silicon-based adapter board, the metal layer on the lower surface of the bottom silicon-based adapter board and the solder balls on the lower surface of the bottom silicon-based adapter board, and the signal interconnection with the external interface is achieved through silicon-through holes in the middle silicon-based adapter board, silicon-through holes in the top silicon-based adapter board and the solder balls on the top silicon-based adapter board;

[0008] The dam of the direct copper-plated ceramic substrate is formed by electroplating on the direct copper-plated ceramic substrate, and is welded and sealed with the high-temperature co-fired ceramic substrate. The high thermal conductivity material is embedded in the direct copper-plated ceramic substrate, and the high-power chip device is placed on the high thermal conductivity material. The dam of the direct copper-plated ceramic substrate is used to realize the signal interconnection between the high-temperature co-fired ceramic substrate and the direct copper-plated ceramic substrate;

[0009] The frequency selection structure on the lower surface of the top silicon-based adapter board and the frequency selection structure on the lower surface of the high-temperature co-fired ceramic substrate are respectively arranged directly above the low-power chip device and the high-power chip device. They are metal structures and are used to absorb electromagnetic waves at specific frequencies.

[0010] Preferably, the high-reliability multi-channel three-dimensional heterogeneous integrated microsystem also includes wafer-level bonding points on the lower surface of the top-layer silicon-based adapter board and wafer-level bonding points on the lower surface of the middle-layer silicon-based adapter board. The wafer-level bonding points on the lower surface of the top-layer silicon-based adapter board are used for bonding interconnection between the top-layer silicon-based adapter board and the middle-layer silicon-based adapter board, and the wafer-level bonding points on the lower surface of the middle-layer silicon-based adapter board are used as bonding connection points between the middle-layer silicon-based adapter board and the bottom-layer silicon-based adapter board.

[0011] Preferably, the high-reliability multi-channel three-dimensional heterogeneous integrated microsystem also includes a metal hole structure in a high-temperature co-fired ceramic substrate and a metal hole structure in a direct copper-plated ceramic substrate, which are used for electrical connection, signal transmission and heat dissipation between the ceramic package and the silicon-based package and inside the ceramic package.

[0012] Preferably, the high-reliability multi-channel three-dimensional heterogeneous integrated microsystem also includes rewiring on the upper surface of the top silicon-based adapter board, an insulating layer on the upper surface of the top silicon-based adapter board and rewiring on the lower surface of the top silicon-based adapter board. The rewiring on the upper surface of the top silicon-based adapter board and the rewiring on the lower surface of the top silicon-based adapter board are used for signal interconnection of the top silicon-based adapter board, and the insulating layer on the upper surface of the top silicon-based adapter board is used for electrical isolation of the top silicon-based adapter board.

[0013] Preferably, the high thermal conductivity material includes molybdenum copper and diamond copper.

[0014] Preferably, the bottom of the direct copper-plated ceramic substrate adopts a QFN interface.

[0015] Preferably, the metal structure is etched with a gap structure, which can absorb electromagnetic waves at a specific frequency.

[0016] The high-reliability multi-channel three-dimensional heterogeneous heterogeneous integrated microsystem according to the above aspects of the present invention can improve the electromagnetic stability of the system, enhance the thermal conductivity of the system, and improve the reliability of the system as a whole. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solution of the present invention, the following briefly introduces the drawings used in the description of the embodiments of the present invention. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative work:

[0018] Figure 1 2 is a schematic structural diagram of a high-reliability multi-channel three-dimensional heterogeneous heterogeneous integrated microsystem according to an embodiment of the present invention;

[0019] Figure 2 is a schematic diagram of a frequency selection structure of an embodiment of the present invention;

[0020] Figure 3 1 is a schematic diagram of a frequency selection structure according to an embodiment of the present invention. DETAILED DESCRIPTION

[0021] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0022] One embodiment of the present invention provides a high reliability multi-channel three-dimensional heterogeneous heterogeneous integrated microsystem, such as Figure 1As shown, the high reliability multi-channel three-dimensional heterogeneous heterogeneous integrated microsystem of the embodiment of the present invention includes solder balls 1 on the top silicon-based adapter board, rewiring 2 on the top silicon-based adapter board, insulating layer 3 on the top silicon-based adapter board, top silicon-based adapter board 4, silicon through holes 5 in the top silicon-based adapter board, rewiring 6 on the bottom surface of the top silicon-based adapter board, frequency selection structure 7 on the bottom surface of the top silicon-based adapter board, wafer-level bonding points 8 on the bottom surface of the top silicon-based adapter board, middle silicon-based adapter board 9, silicon through holes 10 on the middle silicon-based adapter board, low power consumption chip devices 11, and bottom of the middle silicon-based adapter board Surface wafer-level bonding points 12, rewiring on the upper surface of the bottom silicon-based adapter board 13, silicon through holes in the bottom silicon-based adapter board 14, bottom silicon-based adapter board 15, metal layer on the lower surface of the bottom silicon-based adapter board 16, solder balls on the lower surface of the bottom silicon-based adapter board 17, high-temperature co-fired ceramic substrate 18, frequency selection structure on the lower surface of the high-temperature co-fired ceramic substrate 19, metal hole structure in the high-temperature co-fired ceramic substrate 20, direct copper-plated ceramic substrate dam 21, high-power chip devices 22, direct copper-plated ceramic substrate 23, high thermal conductivity material 24, and metal hole structure in the direct copper-plated ceramic substrate 25.

[0023] The silicon-based package includes three layers of silicon adapter boards, namely, the top silicon-based adapter board 4, the middle silicon-based adapter board 9, and the bottom silicon-based adapter board 15. The low-power chip device 11 is placed on the bottom silicon-based adapter board 15, and is bonded to the upper surface of the bottom silicon-based adapter board through gold wires and then wired 13 to achieve intra-layer signal interconnection. The signal interconnection between the silicon-based package and the ceramic package is achieved through the silicon-through via 14 in the bottom silicon-based adapter board, the metal layer 16 on the bottom surface of the bottom silicon-based adapter board, and the solder ball 17 on the bottom surface of the bottom silicon-based adapter board. The signal interconnection with the external interface is achieved through the silicon-through via 10 in the middle silicon-based adapter board, the silicon-through via 5 in the top silicon-based adapter board, and the solder ball 1 on the top silicon-based adapter board.

[0024] The ceramic package includes a high-temperature co-fired ceramic substrate 18, a direct copper-plated ceramic substrate dam 21 and a direct copper-plated ceramic substrate 23. The direct copper-plated ceramic substrate dam 21 is directly electroplated on the direct copper-plated ceramic substrate 23 and welded and sealed with the high-temperature co-fired ceramic substrate 18. A high thermal conductivity material 24 is embedded in the direct copper-plated ceramic substrate 23. A high-power chip device 22 is directly placed on the high thermal conductivity material 24, wherein the high thermal conductivity material 24 includes but is not limited to high thermal conductivity materials such as molybdenum copper and diamond copper. The direct copper-plated ceramic substrate dam 21 realizes signal interconnection between the high-temperature co-fired ceramic substrate 18 and the direct copper-plated ceramic substrate 23.

[0025] The wafer-level bonding points 8 on the lower surface of the top silicon-based adapter board 4 are used for bonding interconnection between the top silicon-based adapter board 4 and the middle silicon-based adapter board 9, and the wafer-level bonding points 12 on the lower surface of the middle silicon-based adapter board 9 are used as bonding connection points between the middle silicon-based adapter board 9 and the bottom silicon-based adapter board 15. The metal hole structure 20 in the high-temperature co-fired ceramic substrate and the metal hole structure 25 in the direct copper-plated ceramic substrate can be used for electrical connection, signal transmission and heat dissipation between the ceramic package and the silicon-based package and inside the ceramic package. The upper surface rewiring 2 of the top silicon-based adapter board and the lower surface rewiring 6 of the top silicon-based adapter board can be used for signal interconnection of the top silicon-based adapter board, and the upper surface insulating layer 3 of the top silicon-based adapter board can be used for electrical isolation of the top silicon-based adapter board.

[0026] The non-solder ball interconnection structure at the bottom of the direct copper-plated ceramic substrate 23 adopts a planar interface such as QFN (Quad Flat No-leads Package) and is directly welded on the antenna motherboard or other heat dissipation surfaces.

[0027] The frequency selection structure 7 on the bottom surface of the top silicon-based adapter plate and the frequency selection structure 19 on the bottom surface of the high-temperature co-fired ceramic substrate are respectively arranged directly above the low-power chip device 11 and the high-power chip device 22. They are a metal structure, not a conventional absorbing material. Figure 2 and Figure 3 As shown, a rectangular slot structure 31 or a slot structure of other shapes is etched at the metal structure, which can absorb electromagnetic waves at a specific frequency. When an electromagnetic wave is incident into the structure, the electromagnetic wave is reflected and transmitted at the interface between the metal and the medium. By reasonably designing the metal layer of the frequency selective structure and adjusting the parameters W1 and W2 of the slot structure in the metal layer, the transmitted wave entering the medium can be increased, the reflected wave can be reduced, and the electromagnetic wave loss can be inside the medium, so that the reflected electromagnetic wave is greatly reduced. The combination of the metal structure and the medium can achieve the effect of spatial filtering, and can absorb electromagnetic waves at a specific frequency. The metal layer can be a rectangular patch structure, and the slot structure can be a rectangular slot structure, but is not limited to the structure.

[0028] Compared with the prior art, the high-reliability multi-channel three-dimensional heterogeneous heterogeneous integrated microsystem of the embodiment of the present invention has the following significant advantages: (1) while combining silicon-based technology and ceramic technology, a high thermal conductivity packaging structure is realized by combining ceramic packaging technology and high thermal conductivity materials, which greatly improves the thermal stability of the system and improves the reliability of the system; (2) in the very limited internal space of silicon-based packaging and ceramic packaging, a frequency selective structure is designed to replace the conventional absorbing structure, thereby reducing electromagnetic interference and improving the electromagnetic stability of the system; (3) a combination of silicon-based packaging technology, ceramic packaging technology and frequency selective structure is adopted to realize multi-chip stacking to complete the three-dimensional packaging of the system. This heterogeneous heterogeneous integration method can fully optimize the chip layout inside the package based on the characteristics of the packaging material and the chip material, taking into account the RF performance and physical properties of both. While reducing the volume of the RF microsystem, it strengthens the electromagnetic shielding between channels, reduces the internal effect of the cavity, increases the heat dissipation capacity, and improves the reliability of the system as a whole.

[0029] The above description is only by way of illustration of certain exemplary embodiments of the present invention. It is undoubted that those skilled in the art can modify the described embodiments in various ways without departing from the spirit and scope of the present invention. Therefore, the above drawings and descriptions are illustrative in nature and should not be construed as limiting the scope of protection of the claims of the present invention.

Claims

1. A high-reliability multi-channel three-dimensional heterogeneous heterogeneous integrated microsystem, characterized in that: Including solder balls on the top silicon-based adapter board, the top silicon-based adapter board, silicon through holes in the top silicon-based adapter board, frequency selection structure on the bottom surface of the top silicon-based adapter board, the middle silicon-based adapter board, silicon through holes in the middle silicon-based adapter board, low-power chip devices, upper surface rewiring of the bottom silicon-based adapter board, silicon through holes in the bottom silicon-based adapter board, the bottom silicon-based adapter board, solder balls on the bottom surface of the bottom silicon-based adapter board, high-temperature co-fired ceramic substrate, frequency selection structure on the bottom surface of the high-temperature co-fired ceramic substrate, direct copper-plated ceramic substrate dam, high-power chip devices, direct copper-plated ceramic substrate, and high thermal conductivity materials; The top silicon-based adapter board, the middle silicon-based adapter board and the bottom silicon-based adapter board constitute a silicon-based package, the high-temperature co-fired ceramic substrate, the direct copper-plated ceramic substrate dam and the direct copper-plated ceramic substrate constitute a ceramic package, the low-power chip device is placed on the bottom silicon-based adapter board, bonded to the upper surface of the bottom silicon-based adapter board by gold wires and then wired to achieve intra-layer signal interconnection, the signal interconnection between the silicon-based package and the ceramic package is achieved through silicon-through holes in the bottom silicon-based adapter board, the metal layer on the lower surface of the bottom silicon-based adapter board and the solder balls on the lower surface of the bottom silicon-based adapter board, and the signal interconnection with the external interface is achieved through silicon-through holes in the middle silicon-based adapter board, silicon-through holes in the top silicon-based adapter board and the solder balls on the top silicon-based adapter board; The dam of the direct copper-plated ceramic substrate is formed by electroplating on the direct copper-plated ceramic substrate, and is welded and sealed with the high-temperature co-fired ceramic substrate. The high thermal conductivity material is embedded in the direct copper-plated ceramic substrate, and the high-power chip device is placed on the high thermal conductivity material. The dam of the direct copper-plated ceramic substrate is used to realize the signal interconnection between the high-temperature co-fired ceramic substrate and the direct copper-plated ceramic substrate; The frequency selection structure on the lower surface of the top silicon-based adapter board and the frequency selection structure on the lower surface of the high-temperature co-fired ceramic substrate are respectively arranged directly above the low-power chip device and the high-power chip device. They are metal structures and are used to absorb electromagnetic waves at specific frequencies.

2. The high-reliability multi-channel three-dimensional heterogeneous integrated microsystem according to claim 1, characterized in that: It also includes wafer-level bonding points on the lower surface of the top-layer silicon-based adapter board and wafer-level bonding points on the lower surface of the middle-layer silicon-based adapter board. The wafer-level bonding points on the lower surface of the top-layer silicon-based adapter board are used for bonding interconnection between the top-layer silicon-based adapter board and the middle-layer silicon-based adapter board, and the wafer-level bonding points on the lower surface of the middle-layer silicon-based adapter board are used as bonding connection points between the middle-layer silicon-based adapter board and the bottom-layer silicon-based adapter board.

3. The high-reliability multi-channel three-dimensional heterogeneous integrated microsystem according to claim 1 or 2, characterized in that: It also includes metal hole structures in high-temperature co-fired ceramic substrates and metal hole structures in direct copper-plated ceramic substrates, which are used for electrical connection, signal transmission and heat dissipation between ceramic packages and silicon-based packages and inside ceramic packages.

4. The high-reliability multi-channel three-dimensional heterogeneous integrated microsystem according to claim 1 or 2, characterized in that: It also includes rewiring on the upper surface of the top silicon-based adapter board, an insulating layer on the upper surface of the top silicon-based adapter board and rewiring on the lower surface of the top silicon-based adapter board. The rewiring on the upper surface of the top silicon-based adapter board and the rewiring on the lower surface of the top silicon-based adapter board are used for signal interconnection of the top silicon-based adapter board, and the insulating layer on the upper surface of the top silicon-based adapter board is used for electrical isolation of the top silicon-based adapter board.

5. The high-reliability multi-channel three-dimensional heterogeneous integrated microsystem according to claim 1 or 2, characterized in that: The high thermal conductivity material includes molybdenum copper and diamond copper.

6. The high-reliability multi-channel three-dimensional heterogeneous integrated microsystem according to claim 1 or 2, characterized in that: The bottom of the direct copper-plated ceramic substrate adopts a QFN interface.

7. The high-reliability multi-channel three-dimensional heterogeneous integrated microsystem as described in claim 1 or 2, wherein the metal structure is etched with a gap structure that can absorb electromagnetic waves at a specific frequency.

Images