Method and system for obtaining temperature deviation of sample holder and manufacturing epitaxial material

Abstract

The invention provides a method and a system for acquiring the temperature deviation of a sample holder and manufacturing an epitaxial material. The method for acquiring the temperature deviation of the sample holder comprises the following steps: controlling the sample holder to be in a non-rotating state, controlling an outer ring heater to be in a non-working state and controlling an inner ring heater to be in a working state; when reconstruction occurs on the substrate, acquiring the current heating temperature of the inner ring heater; after the epitaxial material is obtained based on the substrate, obtaining the quantum dot density of the epitaxial material; and obtaining the temperature deviation between the inner ring heater and the outer ring heater based on the current heating temperature and the quantum dot density. The temperature deviation of the sample holder can be automatically, accurately and quantitatively obtained, a foundation is laid for growing an epitaxial material by using the sample holder subsequently, the temperature uniformity of the epitaxial material is ensured, and the production efficiency and the automation degree are improved.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular to a method and system for obtaining temperature deviation of a sample rack and manufacturing epitaxial materials. Background Art

[0002] In the development of III-V (3-5) compound semiconductor materials and devices, epitaxy technology plays a pivotal role in promoting the rapid development of III-V compound semiconductor materials and devices. In particular, with the maturity and development of molecular beam epitaxy technology, its combination with band engineering has greatly promoted the research of condensed low-dimensional semiconductor physics, and a variety of semiconductor quantum microstructures based on fine band cutting have become a reality. Molecular beam epitaxy technology provides the best interface quality and structural control required by semiconductor quantum microstructures, creating the technical prerequisite for artificially designing and synthesizing low-dimensional quantum wells and quantum dot microstructure materials and devices. It is the basis for the discovery and development of a series of new phenomena and new theories in semiconductor physics, and has promoted the rapid development of compound semiconductor devices such as ultra-high-speed microwave electronic devices and low-power optoelectronic devices.

[0003] The temperature uniformity of the surface of the molecular beam epitaxial growth material is closely related to the uniformity of the final material and is also affected by many factors, especially for molecular beam epitaxial growth based on large-size sample holders. In molecular beam epitaxy equipment, the heating of the substrate is mainly through the thermal radiation heating of the heater parallel to the substrate. There is a thermal radiation field gradient between the substrate heater and the substrate, and the temperature field on the plane of the substrate heater is also non-uniform. These factors will lead to non-uniform substrate temperature.

[0004] The sample holder for growing large-size samples generally includes two heaters, namely the inner circle heater and the outer circle heater. The temperature deviation of the two heaters of the sample holder directly affects the performance uniformity of the grown material, so correcting the temperature deviation of the large-size sample holder is particularly important for growing epitaxial materials with good uniformity. The conventional method currently used is to use a specific heater temperature difference to grow the required epitaxial material, observe the surface morphology of the sample or test the uniformity of the photoelectric properties of the material, and then adjust the sample holder temperature setting based on experience. However, these methods and processes lack quantitative data and can only provide qualitative references for sample holder temperature adjustment, so they require repeated and frequent attempts and are strongly dependent on the experience and ability of the process personnel. Summary of the invention

[0005] The technical problem to be solved by the present disclosure is to overcome the defect in the prior art that the temperature deviation of the sample holder cannot be obtained automatically, accurately and quantitatively, and to provide a method and system for obtaining the temperature deviation of the sample holder and manufacturing epitaxial materials.

[0006] The present invention solves the above technical problems through the following technical solutions:

[0007] In a first aspect, a method for obtaining a temperature deviation of a sample holder is provided, wherein the sample holder comprises an inner ring heater and an outer ring heater, wherein the inner ring heater and the outer ring heater are used to heat a substrate, and the sample holder processes the substrate using a molecular beam epitaxy technique to obtain an epitaxial material;

[0008] The temperature deviation acquisition method comprises:

[0009] Controlling the sample holder to be in a non-rotating state, the outer ring heater to be in a non-working state, and the inner ring heater to be in a working state;

[0010] When reconstruction occurs on the substrate, obtaining a current heating temperature of the inner ring heater;

[0011] After the epitaxial material is obtained based on the substrate, obtaining the quantum dot density of the epitaxial material;

[0012] Based on the current heating temperature and the quantum dot density, a temperature deviation between the inner ring heater and the outer ring heater is acquired.

[0013] Preferably, when reconstruction occurs on the substrate, the step of obtaining the current heating temperature of the inner ring heater comprises:

[0014] When reconstruction occurs on the substrate, obtaining a current first heating temperature and a current second heating temperature of the inner ring heater;

[0015] Wherein, the current second heating temperature is higher than the current first heating temperature.

[0016] Preferably, after the epitaxial material is obtained based on the substrate, the step of obtaining the quantum dot density of the epitaxial material comprises:

[0017] After the epitaxial material is obtained based on the substrate, a first quantum dot density and a second quantum dot density of the epitaxial material are obtained;

[0018] Wherein, the second quantum dot density is greater than the first quantum dot density.

[0019] Preferably, the step of obtaining the temperature deviation between the inner ring heater and the outer ring heater based on the current heating temperature and the quantum dot density comprises:

[0020] The temperature deviation is calculated based on the current first heating temperature, the current second heating temperature, the first quantum dot density, and the second quantum dot density.

[0021] Preferably, the formula for calculating the temperature deviation is:

[0022]

[0023] Wherein, ΔT represents the temperature deviation, T2 represents the current second heating temperature, T1 represents the current first heating temperature, D2 represents the second quantum dot density, and D1 represents the first quantum dot density.

[0024] Preferably, the current first heating temperature is the temperature of the inner ring heater when the substrate undergoes reconstruction for the first time;

[0025] and / or, the current second heating temperature is the temperature of the inner ring heater when all the substrates are reconstructed;

[0026] and / or, the first quantum dot density is the minimum value among the quantum dot densities of the epitaxial material;

[0027] And / or, the second quantum dot density is the maximum value among the quantum dot densities of the epitaxial material.

[0028] Preferably, the substrate comprises a GaAs substrate or an InP substrate;

[0029] And / or, the sample holder has a size greater than or equal to 4 inches.

[0030] In a second aspect, a method for manufacturing an epitaxial material is also provided, the manufacturing method comprising:

[0031] Setting a first operating temperature of an inner ring heater of the sample holder and a second operating temperature of an outer ring heater;

[0032] Wherein, the second working temperature is equal to the sum of the first working temperature and the temperature deviation, and the temperature deviation is obtained by using the temperature deviation obtaining method of the sample holder described above;

[0033] The inner ring heater, the outer ring heater and the sample holder are controlled to work, and based on the molecular beam epitaxy technology, the substrate on the sample holder is processed to obtain an epitaxial material.

[0034] In a third aspect, an epitaxial material is also provided, wherein the epitaxial material is manufactured using the above-mentioned method for manufacturing the epitaxial material.

[0035] In a fourth aspect, a temperature deviation acquisition system of a sample holder is further provided, wherein the sample holder comprises an inner ring heater and an outer ring heater, wherein the inner ring heater and the outer ring heater are used to heat a substrate, and the sample holder processes the substrate using a molecular beam epitaxy technique to obtain an epitaxial material;

[0036] The temperature deviation acquisition system comprises:

[0037] An operation state control module, used for controlling the sample holder to be in a non-rotating state, the outer ring heater to be in a non-working state, and the inner ring heater to be in a working state;

[0038] A temperature acquisition module, used for acquiring the current heating temperature of the inner ring heater when reconstruction occurs on the substrate;

[0039] A quantum dot density acquisition module, used for acquiring the quantum dot density of the epitaxial material after the epitaxial material is obtained based on the substrate;

[0040] A temperature deviation acquisition module is used to acquire the temperature deviation between the inner ring heater and the outer ring heater based on the current heating temperature and the quantum dot density.

[0041] Preferably, the temperature acquisition module is further used to acquire the current first heating temperature and the current second heating temperature of the inner ring heater when reconstruction occurs on the substrate;

[0042] Wherein, the current second heating temperature is higher than the current first heating temperature.

[0043] Preferably, the quantum dot density acquisition module is further used to acquire a first quantum dot density and a second quantum dot density of the epitaxial material after the epitaxial material is obtained based on the substrate;

[0044] Wherein, the second quantum dot density is greater than the first quantum dot density.

[0045] Preferably, the temperature deviation acquisition module is further used to calculate the temperature deviation based on the current first heating temperature, the current second heating temperature, the first quantum dot density and the second quantum dot density.

[0046] Preferably, the formula for calculating the temperature deviation is:

[0047]

[0048] Wherein, ΔT represents the temperature deviation, T2 represents the current second heating temperature, T1 represents the current first heating temperature, D2 represents the second quantum dot density, and D1 represents the first quantum dot density.

[0049] Preferably, the current first heating temperature is the temperature of the inner ring heater when the substrate undergoes reconstruction for the first time;

[0050] and / or, the current second heating temperature is the temperature of the inner ring heater when all the substrates are reconstructed;

[0051] and / or, the first quantum dot density is the minimum value among the quantum dot densities of the epitaxial material;

[0052] And / or, the second quantum dot density is the maximum value among the quantum dot densities of the epitaxial material.

[0053] Preferably, the substrate comprises a GaAs substrate or an InP substrate;

[0054] And / or, the sample holder has a size greater than or equal to 4 inches.

[0055] In a fifth aspect, a manufacturing system for epitaxial material is also provided, the manufacturing system comprising:

[0056] A temperature setting module, used to set a first operating temperature of an inner ring heater and a second operating temperature of an outer ring heater of the sample rack;

[0057] Wherein, the second working temperature is equal to the sum of the first working temperature and the temperature deviation, and the temperature deviation is obtained by using the temperature deviation acquisition system of the sample rack described above;

[0058] The epitaxial material generation module is used to control the inner ring heater, the outer ring heater and the sample holder to work, and based on the molecular beam epitaxy technology, process the substrate on the sample holder to obtain the epitaxial material.

[0059] In a sixth aspect, an electronic device is also provided, comprising a memory, a processor, and a computer program stored in the memory and used to run on the processor, wherein when the processor executes the computer program, the temperature deviation acquisition method of the sample holder described above, or the method for manufacturing the epitaxial material described above is implemented.

[0060] In a seventh aspect, a computer-readable storage medium is also provided, on which a computer program is stored, and when the computer program is executed by a processor, the method for obtaining the temperature deviation of the sample holder described above, or the method for manufacturing the epitaxial material described above is implemented.

[0061] On the basis of being in accordance with the common sense in the art, the above-mentioned preferred conditions can be arbitrarily combined to obtain the preferred embodiments of the present disclosure.

[0062] The positive and progressive effects of this disclosure are:

[0063] The method and system for obtaining the temperature deviation of the sample holder and manufacturing epitaxial materials disclosed in the present invention obtain the current heating temperature of the inner ring heater of the sample holder when reconstruction occurs on the substrate, obtain the quantum dot density of the epitaxial material after the epitaxial material is obtained based on the substrate, and obtain the temperature deviation between the inner ring heater and the outer ring heater according to the current heating temperature and the quantum dot density; the temperature deviation of the sample holder is obtained automatically, accurately and quantitatively, laying a foundation for the subsequent use of the sample holder to grow epitaxial materials, ensuring the temperature uniformity of the epitaxial material, and improving the production efficiency and the degree of automation. BRIEF DESCRIPTION OF THE DRAWINGS

[0064] Figure 1 A first flow chart of the method for obtaining the temperature deviation of a sample rack provided in Embodiment 1 of the present disclosure;

[0065] Figure 2 A second flow chart of the method for obtaining the temperature deviation of a sample rack provided in Embodiment 1 of the present disclosure;

[0066] Figure 3 A third flow chart of the method for obtaining the temperature deviation of the sample rack provided in Embodiment 1 of the present disclosure;

[0067] Figure 4 A fourth flow chart of the method for obtaining the temperature deviation of a sample rack provided in Embodiment 1 of the present disclosure;

[0068] Figure 5 A schematic flow chart of a method for manufacturing an epitaxial material provided in Example 2 of the present disclosure;

[0069] Figure 6 A schematic diagram of the structure of a temperature deviation acquisition system for a sample rack provided in Example 4 of the present disclosure;

[0070] Figure 7 A schematic diagram of the structure of a system for manufacturing epitaxial materials provided in Example 5 of the present disclosure;

[0071] Figure 8 A schematic diagram of the structure of an electronic device provided in Example 6 of the present disclosure. DETAILED DESCRIPTION

[0072] The present disclosure is further described below by way of examples, but the present disclosure is not limited to the scope of the examples.

[0073] Example 1

[0074] This embodiment provides a method for obtaining a temperature deviation of a sample holder, wherein the sample holder includes an inner ring heater and an outer ring heater, the inner ring heater and the outer ring heater are used to heat a substrate, and the sample holder uses a molecular beam epitaxy technique to process the substrate to obtain an epitaxial material; Figure 1As shown, the temperature deviation acquisition method includes:

[0075] S1. Control the sample holder to be in a non-rotating state, the outer ring heater to be in a non-working state, and the inner ring heater to be in a working state.

[0076] S2. When reconstruction occurs on the substrate, the current heating temperature of the inner ring heater is obtained.

[0077] S3. After the epitaxial material is obtained based on the substrate, the quantum dot density of the epitaxial material is obtained.

[0078] S4. Based on the current heating temperature and quantum dot density, obtain the temperature deviation between the inner circle heater and the outer circle heater.

[0079] In the prior art, in order to ensure the temperature uniformity of the obtained epitaxial material, during the actual growth process, the sample holder needs to be rotated and the outer ring heater and the inner ring heater need to be turned on at the same time, and the temperature of the outer ring heater is higher than that of the inner ring heater.

[0080] In this embodiment, by controlling the sample holder to be in a non-rotating state, the outer ring heater to be in a non-working state, that is, the outer ring heater is turned off, and the inner ring heater to be in a working state, that is, the inner ring heater is turned on, the molecular beam epitaxy process is monitored to obtain the current heating temperature of the inner ring heater of the sample holder when reconstruction occurs on the substrate, and the quantum dot density of the epitaxial material after the epitaxial material is obtained. The temperature deviation between the inner ring heater and the outer ring heater of the sample holder can be calculated through the current heating temperature and the quantum dot density; the temperature deviation of the sample holder is obtained automatically, accurately and quantitatively, which lays a foundation for the subsequent use of the sample holder to grow epitaxial materials, ensures the temperature uniformity of the epitaxial material, and improves the production efficiency and the degree of automation.

[0081] In an optional embodiment, if Figure 2 As shown, step S2 includes:

[0082] S21. When reconstruction occurs on the substrate, obtain the current first heating temperature and the current second heating temperature of the inner ring heater.

[0083] The current second heating temperature is higher than the current first heating temperature, and the current heating temperature includes the current first heating temperature and the current second heating temperature.

[0084] The substrate has an oxide layer, which decomposes during heating, and reconstruction occurs on the substrate to form a reconstruction pattern. Specifically, the reconstruction can be visually observed by human eyes or a high-energy electron diffraction instrument.

[0085] As the temperature of the inner ring heater rises, reconstruction will appear at different positions on the substrate. Therefore, the different current heating temperatures of the inner ring heater from the beginning of reconstruction to the complete reconstruction on the substrate can be recorded to obtain the current first heating temperature and the current second heating temperature, and the current second heating temperature is higher than the current first heating temperature.

[0086] In an optional embodiment, if Figure 3 As shown, step S3 includes:

[0087] S31: After an epitaxial material is obtained based on the substrate, a first quantum dot density and a second quantum dot density of the epitaxial material are obtained.

[0088] The second quantum dot density is greater than the first quantum dot density, and the quantum dot density includes the first quantum dot density and the second quantum dot density.

[0089] The temperature of the inner circle heater is regulated, and based on the molecular beam epitaxy technology, the substrate is processed to obtain epitaxial material, which can also become a sample or epitaxial wafer.

[0090] The quantum dot morphology on the surface of the epitaxial material can be observed by an atomic force microscope or an image recognition instrument, and the quantum dot density in different areas can be extracted. The quantum dot density corresponds to a certain numerical range. Therefore, the first quantum dot density and the second quantum dot density can be selected according to the size of the quantum dot density numerical range, and the second quantum dot density is greater than the first quantum dot density.

[0091] In an optional embodiment, if Figure 4 As shown, step S4 includes:

[0092] S41: Calculate the temperature deviation based on the current first heating temperature, the current second heating temperature, the first quantum dot density, and the second quantum dot density.

[0093] Specifically, the temperature deviation can be calculated using the following formula:

[0094]

[0095] Wherein, ΔT represents the temperature deviation between the inner circle heater and the outer circle heater of the sample holder, T2 represents the current second heating temperature, T1 represents the current first heating temperature, D2 represents the second quantum dot density, and D1 represents the first quantum dot density.

[0096] In an optional embodiment, the current first heating temperature is the temperature of the inner ring heater when reconstruction occurs for the first time on the substrate, that is, the minimum value of the current heating temperatures when reconstruction occurs.

[0097] In an optional embodiment, the current second heating temperature is the temperature of the inner ring heater when reconstruction occurs in all substrates, that is, the maximum value of the current heating temperatures when reconstruction occurs.

[0098] In an optional embodiment, the first quantum dot density is a minimum value among the quantum dot densities of the epitaxial material.

[0099] In an optional embodiment, the second quantum dot density is a maximum value among the quantum dot densities of the epitaxial material.

[0100] In an optional embodiment, the substrate includes but is not limited to a GaAs (gallium arsenic) substrate or an InP (indium phosphorus) substrate.

[0101] In an alternative embodiment, the sample holder has a dimension greater than or equal to 4 inches.

[0102] Sample racks of 4 inches or more are generally referred to as large-size sample racks. Such sample racks generally require at least two heaters, namely, an inner ring heater and an outer ring heater to work together. The sample rack in the present disclosure may also be referred to as a large-size sample rack.

[0103] The working principle of the present disclosure is further explained below with reference to three specific examples:

[0104] 1. A method for obtaining the temperature deviation of a 6-inch sample holder for molecular beam epitaxy. The specific steps are as follows:

[0105] (1) Install a single 6-inch GaAs substrate on the sample holder, and the sample holder does not rotate. Only turn on the central heater of the sample holder (i.e., the inner ring heater), and do not turn on the peripheral heater of the sample holder (i.e., the outer ring heater). Slowly heat the central heater at a rate of 10°C / min (degrees Celsius per minute), and turn on the As (arsenic) beam for protection when the central thermocouple temperature of the sample holder is 350°C (degrees Celsius). Use a high-energy electron diffractometer to observe and record the central heater thermocouple temperature (i.e., the current heating temperature) when (2×4) reconstruction appears in different areas on the substrate, from low to high, T1 to T2, for example, 670 to 710°C;

[0106] (2) After reconstruction occurs at different locations on the substrate, the temperature is continued to rise, and the temperature of the central heater of the sample holder is raised by 10°C, that is, 720°C is maintained for 10 minutes;

[0107] (3) The temperature setting of the central heater of the sample holder was lowered by 20°C to 700°C, and a GaAs buffer layer with a thickness of 300 nm was grown;

[0108] (4) Lower the temperature of the sample holder center heater by 200°C, i.e. 500°C, open the shutter of the In (indium) furnace to grow InAs quantum dots with a thickness of 2 atomic layers. After the growth stops, cool the sample holder, turn off the As beam when the center heater thermocouple temperature is 350°C, and continue to cool down to below 150°C before taking out the sample (i.e. epitaxial material);

[0109] (5) Atomic force microscopy was used to test the quantum dot morphology on the sample surface and extract the quantum dot density in different areas, from low to high, respectively D2 to D1, such as 2×10 10 Up to 3×10 10 cm -2 ;

[0110] (6) The temperature deviation ΔT of the sample holder heater is calculated according to the formula:

[0111]

[0112] Thus, the temperature deviation of the 6-inch sample holder is obtained (or corrected), that is, the temperature deviation between the outer ring heater and the inner ring heater is 63.6°C.

[0113] 2. Method for obtaining temperature deviation of sample holder for molecular beam epitaxy of 4 6-inch wafers (or single 12-inch wafer), the specific steps are as follows:

[0114] (1) Install 4 6-inch GaAs substrates on the sample holder (arranged in a 2x2 manner), and the sample holder does not rotate. Only turn on the central heater of the sample holder (i.e., the inner ring heater), and do not turn on the peripheral heater of the sample holder (i.e., the outer ring heater). Slowly heat the central heater at a rate of 5°C / min, and turn on the As beam for protection when the central thermocouple temperature of the sample holder is 350°C. Use a high-energy electron diffractometer to observe and record the central heater thermocouple temperature (i.e., the current heating temperature) when (2×4) reconstruction occurs in different areas of the entire sample holder substrate, from low to high, T1 to T2, for example, 680 to 715°C;

[0115] (2) After reconstruction occurs at different locations on the substrate, the temperature is continued to rise, and the temperature of the heater at the center of the sample holder is raised by 15°C to 730°C, and maintained for 20 minutes;

[0116] (3) The temperature setting of the central heater of the sample holder was lowered by 15°C to 715°C, and a GaAs buffer layer with a thickness of 600 nm was grown;

[0117] (4) Lower the temperature of the sample holder center heater by 150°C, that is, lower the temperature to 565°C, open the In furnace shutter to grow InAs quantum dots with a thickness of 3 atomic layers. After the growth stops, cool the sample holder, turn off the As beam when the center heater thermocouple temperature reaches 350°C, and continue to cool down to below 150°C before taking out the sample (i.e., epitaxial material);

[0118] (5) Atomic force microscopy was used to test the quantum dot morphology on the sample surface and extract the quantum dot density in different areas, from low to high, respectively D2 to D1, such as 4×10 9 Up to 7×10 9 cm -2 ;

[0119] (6) The temperature deviation ΔT of the sample holder heater is calculated according to the formula:

[0120]

[0121] Thus, the temperature deviation of the four 6-inch sample racks is obtained, that is, the temperature deviation between the outer ring heater and the inner ring heater is 64.4°C.

[0122] 3. Method for obtaining temperature deviation of 4-inch sample holder for molecular beam epitaxy. The specific steps are as follows:

[0123] (1) Install a single 4-inch InP substrate on the sample holder, and the sample holder does not rotate. Only turn on the central heater of the sample holder (i.e., the inner ring heater), and do not turn on the peripheral heater of the sample holder (i.e., the outer ring heater). Slowly heat the central heater at a rate of 10°C / min, and turn on the P (phosphorus) beam for protection when the central thermocouple temperature of the sample holder is 300°C. Use a high-energy electron diffractometer to observe and record the central heater thermocouple temperature (i.e., the current heating temperature) when (2×4) reconstruction appears in different areas on the substrate, from low to high, T1 to T2, for example, 620 to 640°C;

[0124] (2) After reconstruction occurs at different locations on the substrate, the temperature is continued to rise, and the temperature of the heater at the center of the sample holder is raised by 5°C, that is, maintained at 645°C for 5 minutes;

[0125] (3) The temperature setting of the central heater of the sample holder was lowered by 60°C to 585°C, and an InP buffer layer with a thickness of 400 nm was grown;

[0126] (4) Lower the temperature of the central heater of the sample holder by another 100°C, i.e. 485°C, turn off the P beam and switch to the As beam, maintain for 30 seconds, then open the In furnace shutter to grow InAs quantum dots with a thickness of 2 atomic layers. After the growth stops, cool the sample holder, turn off the As beam when the central heater thermocouple temperature is 350°C, continue to cool down to below 150°C, and then take out the sample (i.e. epitaxial material);

[0127] (5) Atomic force microscopy was used to test the quantum dot morphology on the sample surface and extract the quantum dot density in different areas, from low to high, respectively D2 to D1, such as 6×10 9 Up to 1×10 10 cm -2 ;

[0128] (6) The temperature deviation ΔT of the sample holder heater is calculated according to the formula:

[0129]

[0130] Thus, the temperature deviation of the 4-inch sample holder is obtained, that is, the temperature deviation between the outer ring heater and the inner ring heater is 34.4°C.

[0131] The specific numerical values ​​and substrate types in the above examples are merely exemplary and should not limit the protection scope of the present disclosure.

[0132] Example 2

[0133] This embodiment provides a method for manufacturing an epitaxial material, such as Figure 5 As shown, the manufacturing method includes:

[0134] S5. Setting a first operating temperature of the inner ring heater and a second operating temperature of the outer ring heater of the sample holder.

[0135] The second working temperature is equal to the sum of the first working temperature and the temperature deviation, and the temperature deviation is obtained by using the temperature deviation acquisition method of the sample rack in Example 1.

[0136] S6. Control the inner circle heater, the outer circle heater and the sample holder to work, and process the substrate on the sample holder based on the molecular beam epitaxy technology to obtain epitaxial material.

[0137] The temperature deviation between the inner ring heater and the outer ring heater of the sample holder can be obtained by the temperature deviation acquisition method in Example 1; during the manufacturing process of the epitaxial material, the sample holder is kept in a rotating state, and the first working temperature of the inner ring heater of the sample holder and the second working temperature of the outer ring heater are set to ensure that the second working temperature is equal to the sum of the first working temperature and the temperature deviation, that is, at the same time, the second working temperature of the outer ring heater is higher than the first working temperature of the inner ring heater, and the higher temperature value is the value of the temperature deviation.

[0138] How to obtain epitaxial materials based on molecular beam epitaxy technology is a prior art in this field and will not be described in detail here.

[0139] The method for manufacturing the epitaxial material of this embodiment is based on the temperature deviation acquisition method of the sample holder in Example 1, and obtains the temperature deviation between the inner ring heater and the outer ring heater of the sample holder. Therefore, in the manufacturing process of the epitaxial material, the temperature of the inner ring heater and the outer ring heater is regulated, so that the temperature when high-energy electron diffraction reconstruction occurs in different regions of the substrate and the density of quantum dots in different regions can be made consistent, thereby ensuring the temperature consistency of different regions of the sample holder, ensuring the temperature uniformity of the epitaxial material, and improving production efficiency and automation.

[0140] Example 3

[0141] This embodiment provides an epitaxial material, which is manufactured using the method for manufacturing the epitaxial material of Embodiment 2.

[0142] The epitaxial material of this embodiment is manufactured based on the manufacturing method of the epitaxial material of Embodiment 2, which ensures the temperature uniformity of the epitaxial material.

[0143] Example 4

[0144] This embodiment provides a temperature deviation acquisition system for a sample rack, wherein the sample rack includes an inner ring heater and an outer ring heater, the inner ring heater and the outer ring heater are used to heat a substrate, and the sample rack processes the substrate using a molecular beam epitaxy technique to obtain an epitaxial material; Figure 6 As shown, the temperature deviation acquisition system includes:

[0145] The operation state control module 1 is used to control the sample holder to be in a non-rotating state, the outer ring heater to be in a non-working state, and the inner ring heater to be in a working state;

[0146] The temperature acquisition module 2 is used to acquire the current heating temperature of the inner ring heater when reconstruction occurs on the substrate;

[0147] A quantum dot density acquisition module 3 is used to acquire the quantum dot density of the epitaxial material after the epitaxial material is obtained based on the substrate;

[0148] The temperature deviation acquisition module 4 is used to acquire the temperature deviation between the inner circle heater and the outer circle heater based on the current heating temperature and the quantum dot density.

[0149] In an optional embodiment, the temperature acquisition module 2 is further used to acquire the current first heating temperature and the current second heating temperature of the inner ring heater when reconstruction occurs on the substrate;

[0150] Among them, the current second heating temperature is higher than the current first heating temperature.

[0151] In an optional embodiment, the quantum dot density acquisition module 3 is further used to acquire a first quantum dot density and a second quantum dot density of the epitaxial material after the epitaxial material is obtained based on the substrate;

[0152] The second quantum dot density is greater than the first quantum dot density.

[0153] In an optional implementation, the temperature deviation acquisition module is further used to calculate the temperature deviation based on the current first heating temperature, the current second heating temperature, the first quantum dot density, and the second quantum dot density.

[0154] In an optional implementation, the formula for calculating the temperature deviation is:

[0155]

[0156] Wherein, ΔT represents the temperature deviation, T2 represents the current second heating temperature, T1 represents the current first heating temperature, D2 represents the second quantum dot density, and D1 represents the first quantum dot density.

[0157] In an optional embodiment, the current first heating temperature is the temperature of the inner ring heater when the substrate undergoes reconstruction for the first time.

[0158] In an optional embodiment, when the current second heating temperature is the temperature of the inner ring heater when all reconstruction of the substrate occurs.

[0159] In an optional embodiment, the first quantum dot density is a minimum value among the quantum dot densities of the epitaxial material.

[0160] In an optional embodiment, the second quantum dot density is a maximum value among the quantum dot densities of the epitaxial material.

[0161] In an optional embodiment, the substrate includes a GaAs substrate or an InP substrate.

[0162] In an alternative embodiment, the sample holder has a dimension greater than or equal to 4 inches.

[0163] The sample rack temperature deviation acquisition system of this embodiment corresponds to the sample rack temperature deviation acquisition method of Example 1. The working principle of the sample rack temperature deviation acquisition system is the same as the working principle of the sample rack temperature deviation acquisition method, which will not be repeated here.

[0164] The temperature deviation acquisition system of the sample holder of this embodiment realizes automatic, accurate and quantitative acquisition of the temperature deviation of the sample holder, lays a foundation for the subsequent use of the sample holder to grow epitaxial materials, ensures the temperature uniformity of the epitaxial materials, and improves production efficiency and automation.

[0165] Example 5

[0166] This embodiment provides a system for manufacturing epitaxial materials, such as Figure 7 As shown, the manufacturing system includes:

[0167] A temperature setting module 5, used to set a first operating temperature of the inner ring heater and a second operating temperature of the outer ring heater of the sample rack;

[0168] The second working temperature is equal to the sum of the first working temperature and the temperature deviation, and the temperature deviation is obtained by using the temperature deviation acquisition system of the sample rack of Example 4;

[0169] The epitaxial material generation module 6 is used to control the inner ring heater, the outer ring heater and the sample holder to work, and based on the molecular beam epitaxy technology, process the substrate on the sample holder to obtain the epitaxial material.

[0170] The epitaxial material manufacturing system of this embodiment corresponds to the epitaxial material manufacturing method of Embodiment 2. The working principle of the epitaxial material manufacturing system is the same as the working principle of the epitaxial material manufacturing method, which will not be described in detail here.

[0171] The manufacturing system of the epitaxial material of the present embodiment is based on the temperature deviation acquisition system of the sample holder of Example 4, and obtains the temperature deviation between the inner ring heater and the outer ring heater of the sample holder. Therefore, in the manufacturing process of the epitaxial material, the temperature of the inner ring heater and the outer ring heater is regulated, so that the temperature when high-energy electron diffraction reconstruction occurs in different regions of the substrate and the density of quantum dots in different regions can be made consistent, thereby ensuring the temperature consistency of different regions of the sample holder, ensuring the temperature uniformity of the epitaxial material, and improving production efficiency and automation.

[0172] Example 6

[0173] This embodiment provides an electronic device, Figure 8 This is a schematic diagram of the structure of an electronic device provided in this embodiment. The electronic device includes a memory, a processor, and a computer program stored in the memory and used to run on the processor. When the processor executes the computer program, the temperature deviation acquisition method of the sample holder in the above-mentioned embodiment 1 or the method for manufacturing the epitaxial material in the above-mentioned embodiment 2 is implemented. Figure 8 The electronic device 70 shown is only an example and should not limit the functions and scope of use of the embodiments of the present disclosure. Figure 8 As shown, the electronic device 70 may be in the form of a general-purpose computing device, for example, it may be a server device. The components of the electronic device 70 may include, but are not limited to: at least one processor 71, at least one memory 72, and a bus 73 connecting different system components (including the memory 72 and the processor 71).

[0174] The bus 73 includes a data bus, an address bus, and a control bus.

[0175] The memory 72 may include a volatile memory, such as a random access memory (RAM) 721 and / or a cache memory 722 , and may further include a read-only memory (ROM) 723 .

[0176] The memory 72 may also include a program tool 725 (or utility) having a set (at least one) of program modules 724, such program modules 724 including but not limited to: an operating system, one or more application programs, other program modules and program data, each of which or some combination may include an implementation of a network environment.

[0177] The processor 71 executes various functional applications and data processing by running the computer programs stored in the memory 72, such as the method for obtaining the temperature deviation of the sample holder in the above-mentioned embodiment 1, or the method for manufacturing the epitaxial material in the above-mentioned embodiment 2.

[0178] The electronic device 70 may also communicate with one or more external devices 74. Such communication may be performed via an input / output (I / O) interface 75. Furthermore, the model generating electronic device 70 may also communicate with one or more networks (e.g., a local area network (LAN), a wide area network (WAN), and / or a public network, such as the Internet) via a network adapter 76. Figure 8 As shown, the network adapter 76 communicates with other modules of the electronic device 70 via the bus 73. It should be understood that, although not shown in the figure, other hardware and / or software modules can be used in conjunction with the electronic device 70, including but not limited to: microcode, device drivers, redundant processors, external disk drive arrays, RAID (disk array) systems, tape drives, and data backup storage systems, etc.

[0179] It should be noted that although several units / modules or sub-units / modules of the electronic device are mentioned in the above detailed description, this division is merely exemplary and not mandatory. In fact, according to the embodiments of the present disclosure, the features and functions of two or more units / modules described above can be embodied in one unit / module. Conversely, the features and functions of one unit / module described above can be further divided into multiple units / modules to be embodied.

[0180] Example 7

[0181] This embodiment provides a computer-readable storage medium on which a computer program is stored. When the computer program is executed by a processor, the method for obtaining the temperature deviation of the sample holder in the above embodiment 1 or the method for manufacturing the epitaxial material in the above embodiment 2 is implemented.

[0182] The readable storage medium may include but is not limited to: a portable disk, a hard disk, a random access memory, a read-only memory, an erasable programmable read-only memory, an optical storage device, a magnetic storage device or any suitable combination of the above.

[0183] In a possible implementation, the present disclosure can also be implemented in the form of a program product, which includes a program code. When the program product is run on a terminal device, the program code is used to enable the terminal device to execute the steps in the method for acquiring the temperature deviation of the sample holder in the above-mentioned embodiment 1, or the steps in the method for manufacturing the epitaxial material in the above-mentioned embodiment 2.

[0184] Among them, the program code for executing the present disclosure can be written in any combination of one or more programming languages, and the program code can be executed completely on the user device, partially on the user device, as a separate software package, partially on the user device and partially on a remote device, or completely on the remote device.

[0185] Although the specific embodiments of the present disclosure are described above, those skilled in the art should understand that this is only an example, and the protection scope of the present disclosure is defined by the appended claims. Those skilled in the art may make various changes or modifications to these embodiments without departing from the principles and essence of the present disclosure, but these changes and modifications all fall within the protection scope of the present disclosure.

Claims

1. A method for obtaining a temperature deviation of a sample rack, characterized in that: The sample holder comprises an inner ring heater and an outer ring heater, the inner ring heater and the outer ring heater are used to heat the substrate, and the sample holder processes the substrate by using molecular beam epitaxy technology to obtain epitaxial material; The temperature deviation acquisition method comprises: Controlling the sample holder to be in a non-rotating state, the outer ring heater to be in a non-working state, and the inner ring heater to be in a working state; When reconstruction occurs on the substrate, obtaining a current heating temperature of the inner ring heater; After the epitaxial material is obtained based on the substrate, obtaining the quantum dot density of the epitaxial material; Based on the current heating temperature and the quantum dot density, a temperature deviation between the inner ring heater and the outer ring heater is acquired.

2. The temperature deviation acquisition method according to claim 1, characterized in that: When reconstruction occurs on the substrate, the step of obtaining the current heating temperature of the inner ring heater comprises: When reconstruction occurs on the substrate, obtaining a current first heating temperature and a current second heating temperature of the inner ring heater; Wherein, the current second heating temperature is higher than the current first heating temperature.

3. The temperature deviation acquisition method according to claim 2, characterized in that: After the epitaxial material is obtained based on the substrate, the step of obtaining the quantum dot density of the epitaxial material includes: After the epitaxial material is obtained based on the substrate, a first quantum dot density and a second quantum dot density of the epitaxial material are obtained; Wherein, the second quantum dot density is greater than the first quantum dot density.

4. The temperature deviation acquisition method according to claim 3, characterized in that: The step of obtaining the temperature deviation between the inner ring heater and the outer ring heater based on the current heating temperature and the quantum dot density comprises: The temperature deviation is calculated based on the current first heating temperature, the current second heating temperature, the first quantum dot density, and the second quantum dot density.

5. The temperature deviation acquisition method according to claim 4, characterized in that: The formula for calculating the temperature deviation is: Wherein, ΔT represents the temperature deviation, T2 represents the current second heating temperature, T1 represents the current first heating temperature, D2 represents the second quantum dot density, and D1 represents the first quantum dot density.

6. The temperature deviation acquisition method according to claim 3, characterized in that: The current first heating temperature is the temperature of the inner ring heater when the substrate is restructured for the first time; and / or, the current second heating temperature is the temperature of the inner ring heater when all the substrates are reconstructed; and / or, the first quantum dot density is the minimum value among the quantum dot densities of the epitaxial material; And / or, the second quantum dot density is the maximum value among the quantum dot densities of the epitaxial material.

7. The temperature deviation acquisition method according to claim 1, characterized in that: The substrate comprises a GaAs substrate or an InP substrate; And / or, the sample holder has a size greater than or equal to 4 inches.

8. A method for manufacturing an epitaxial material, characterized in that: The manufacturing method comprises: Setting a first operating temperature of an inner ring heater of the sample holder and a second operating temperature of an outer ring heater; Wherein, the second working temperature is equal to the sum of the first working temperature and the temperature deviation, and the temperature deviation is obtained by using the temperature deviation acquisition method of the sample holder according to any one of claims 1 to 7; The inner ring heater, the outer ring heater and the sample holder are controlled to work, and based on the molecular beam epitaxy technology, the substrate on the sample holder is processed to obtain an epitaxial material.

9. An epitaxial material, characterized in that: The epitaxial material is manufactured using the method for manufacturing an epitaxial material as claimed in claim 8.

10. A temperature deviation acquisition system for a sample rack, characterized in that: The sample holder comprises an inner ring heater and an outer ring heater, the inner ring heater and the outer ring heater are used to heat the substrate, and the sample holder processes the substrate by using molecular beam epitaxy technology to obtain epitaxial material; The temperature deviation acquisition system comprises: An operation state control module, used for controlling the sample holder to be in a non-rotating state, the outer ring heater to be in a non-working state, and the inner ring heater to be in a working state; A temperature acquisition module, used for acquiring the current heating temperature of the inner ring heater when reconstruction occurs on the substrate; A quantum dot density acquisition module, used for acquiring the quantum dot density of the epitaxial material after the epitaxial material is obtained based on the substrate; A temperature deviation acquisition module is used to acquire the temperature deviation between the inner ring heater and the outer ring heater based on the current heating temperature and the quantum dot density.

11. A system for manufacturing epitaxial material, characterized in that: The manufacturing system comprises: A temperature setting module, used to set a first operating temperature of an inner ring heater and a second operating temperature of an outer ring heater of the sample rack; Wherein, the second working temperature is equal to the sum of the first working temperature and the temperature deviation, and the temperature deviation is obtained by using the temperature deviation acquisition system of the sample rack according to claim 9; The epitaxial material generation module is used to control the inner ring heater, the outer ring heater and the sample holder to work, and based on the molecular beam epitaxy technology, process the substrate on the sample holder to obtain the epitaxial material.

12. An electronic device comprising a memory, a processor, and a computer program stored in the memory and used to run on the processor, characterized in that: When the processor executes the computer program, the method for obtaining the temperature deviation of the sample holder according to any one of claims 1 to 7 or the method for manufacturing the epitaxial material according to claim 8 is implemented.

13. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the method for obtaining the temperature deviation of the sample holder according to any one of claims 1 to 7 or the method for manufacturing the epitaxial material according to claim 8 is implemented.

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