Exposure dose correction delivery method, system and device and computer readable storage medium
By monitoring the idle situation of the etching machine in real time and automatically performing the exposure dose correction process, the problem of lithography machines being difficult to control the uniformity of wafer line width is solved, automated production is realized, and cost and human errors are reduced.
Patent Information
- Application Number
- CN202311404596.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-10-26
- Publication Date
- 2025-04-29
AI Technical Summary
Existing lithography machines have difficulty effectively controlling the uniformity of line width in the wafer, resulting in manual exposure dose corrections required at nodes below 40, which increases costs and uncertainty.
By monitoring the idle situation of the etching machine in real time, the exposure dose correction process information is automatically selected and performed, including sub-process formula and distribution assembly information, and automatic lithography and etching processing of batch wafers to be processed.
Reliance on process engineers is reduced, the possibility of manual operation and human error is reduced, overall production efficiency and product line width uniformity is improved, and costs are reduced.
Smart Images
Figure CN119902414A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of semiconductor process technology, and in particular to an exposure dose correction dispatch method, system, device and computer-readable storage medium. Background Art
[0002] At present, due to the characteristics of the lithography machine, it is impossible to control the line width uniformity (Critical Dimension Uniform, CDU) within the wafer well. At nodes below 40, the critical poly layer must be equipped with the exposure dose correction (dosemapper, DOMA) function to better maintain the uniformity of the critical dimension (After Etch Inspection, AEI) and critical dimension (Critical Dimension, CD) after etching. According to relevant data, the exposure dose correction function can improve the uniformity of the entire device by 30%. The exposure dose correction can only be used after etching to see the completion of the critical dimension. Generally, when problems are found, the wafer cannot be saved. In addition, the usual exposure dose correction card control is maintained and operated by the lithography machine process engineer, which is very costly.
[0003] Therefore, it is necessary to provide a new exposure dose correction dispatch method, system, device and computer-readable storage medium to solve the above-mentioned problems existing in the prior art. Summary of the invention
[0004] The object of the present invention is to provide an exposure dose correction dispatch method, system, device and computer-readable storage medium to reduce costs.
[0005] To achieve the above-mentioned purpose, the exposure dose correction dispatch method of the present invention comprises:
[0006] Selecting exposure dose correction process information according to the idle situation of the etching machine, wherein the exposure dose correction process information includes a sub-process recipe and allocation assembly information;
[0007] The sub-process recipe is transmitted to a photolithography machine, and a batch of wafers to be processed is assigned to the photolithography machine. The photolithography machine performs photolithography on the batch of wafers to be processed according to the sub-process recipe to obtain photolithography wafers;
[0008] The photolithography wafer is allocated to a corresponding chamber of the etching machine for etching according to the allocation and assembly information.
[0009] Optionally, before selecting the exposure dose correction process information according to the idle status of the etching machine, the method further includes:
[0010] Check whether the wafers in the batch to be processed have exposure dose correction marks;
[0011] If the wafers of the batch to be processed have an exposure dose correction mark, the exposure dose correction process information is selected according to the idle situation of the etching machine.
[0012] Optionally, the exposure dose correction dispatch method further includes configuring an identification for exposure dose correction of wafers in a batch to be processed, which is used to identify that the wafers in the batch to be processed need to undergo exposure dose correction.
[0013] Optionally, the exposure dose correction dispatch method further includes configuring exposure dose correction process information of a batch of wafers to be processed.
[0014] Optionally, the configuration of exposure dose correction process information of a batch of wafers to be processed includes:
[0015] Configure sub-process recipes and assign assembly information for the wafer batch to be processed.
[0016] Optionally, before assigning the batch of wafers to be processed to the photolithography machine, the method further includes:
[0017] Checking the status of the lithography machine and whether the sub-process recipe is obtained;
[0018] If the status of the lithography machine is normal and the sub-process recipe is obtained, the wafer batch to be processed is assigned to the lithography machine.
[0019] Optionally, before allocating the photolithography wafer to a corresponding chamber of the etching machine for etching according to the allocation and assembly information, the method further includes:
[0020] Inspecting the etching machine;
[0021] If the etching machine is in a normal state, the photolithography wafer is allocated to a corresponding chamber for etching according to the allocation and assembly information.
[0022] Optionally, selecting exposure dose correction process information according to the idle state of the etching machine includes:
[0023] The real-time dispatching system selects exposure dose correction process information for the wafers of the processing batch according to the idle status of the etching machine.
[0024] Optionally, the transmitting the sub-process recipe to a lithography machine comprises:
[0025] The real-time dispatching system sends the exposure dose correction process information to the manufacturing execution system;
[0026] The manufacturing execution system obtains a sub-process recipe from the exposure dose correction process information, and sends the sub-process recipe to the equipment automation programming system;
[0027] The equipment automation programming system sends the sub-process recipe to the lithography machine.
[0028] The present invention also provides an exposure agent correction dispatch system including an acquisition unit and a distribution unit, wherein the acquisition unit is used to select exposure dose correction process information according to the idle situation of the etching machine, and the exposure dose correction process information includes a sub-process formula and distribution assembly information. The distribution unit is used to transmit the sub-process formula to the lithography machine, and distribute the wafers of the batch to be processed to the lithography machine, so that the lithography machine performs lithography on the wafers of the batch to be processed according to the sub-process formula to obtain lithography wafers, and then distributes the lithography wafers to the corresponding chamber of the etching machine for etching according to the distribution assembly information.
[0029] The present invention also provides a device, comprising:
[0030] processor;
[0031] a memory for storing processor-executable instructions;
[0032] Wherein, when the processor is configured to execute the instructions of the memory, the exposure dose correction dispatch method is implemented.
[0033] The present invention also provides a computer-readable storage medium, comprising computer instructions, and when the computer instructions are executed by a processor, the exposure dose correction dispatch method is implemented.
[0034] The beneficial effects of the present invention are as follows: exposure dose correction process information is selected according to the idle situation of the etching machine, the exposure dose correction process information includes a sub-process recipe and allocation assembly information, the sub-process recipe is transmitted to the lithography machine, the wafers of the batch to be processed are assigned to the lithography machine, the lithography machine performs lithography on the wafers of the batch to be processed according to the sub-process recipe to obtain lithography-posted wafers, and the lithography-posted wafers are allocated to the corresponding chamber of the etching machine for etching according to the allocation assembly information, and there is no need for process engineers to manually control the unloading of goods, thereby reducing costs. BRIEF DESCRIPTION OF THE DRAWINGS
[0035] Figure 1 A flowchart of an exposure dose correction dispatch method in some embodiments of the present invention;
[0036] Figure 2 Schematic diagram of the exposure dose correction dispatch process in some specific embodiments of the present invention. DETAILED DESCRIPTION
[0037] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be understood by people with general skills in the field to which the present invention belongs. "Including" and similar words used in this article mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.
[0038] In view of the problems existing in the prior art, an embodiment of the present invention provides a method for correcting the exposure dose. Figure 1 The exposure dose correction delivery method comprises the following steps:
[0039] S1: selecting exposure dose correction process information according to the idle situation of the etching machine, wherein the exposure dose correction process information includes sub-process recipes and allocation assembly information; specifically, the real-time dispatching system selects exposure dose correction process information for the wafers of the batch to be processed according to the idle situation of the etching machine;
[0040] S2: transmitting the sub-process recipe to a lithography machine, assigning a batch of wafers to be processed to the lithography machine, and the lithography machine performs lithography on the batch of wafers to be processed according to the sub-process recipe to obtain lithography-processed wafers;
[0041] S3: allocating the photolithography wafer to a corresponding chamber of the etching machine for etching according to the allocation and assembly information.
[0042] In some embodiments, when it is determined that the wafers in the batch to be processed need to be corrected for exposure dose, it is necessary to configure an identification of the wafers in the batch to be processed for exposure dose correction, which is used to identify that the wafers in the batch to be processed need to be corrected for exposure dose. This is a foolproof measure of the Manufacturing Execution System (MES). Products and semiconductor layers that need to be corrected for exposure dose need to be identified by the process engineer (PE), which can prevent the batch of wafers that need to be corrected for exposure dose from not being corrected for exposure dose.
[0043] In some embodiments, before selecting the exposure dose correction process information according to the idle status of the etching machine, the method further includes:
[0044] Check whether the wafers in the batch to be processed have exposure dose correction marks;
[0045] If the wafers in the batch to be processed have an exposure dose correction mark, then selecting exposure dose correction process information according to the idle situation of the etching machine;
[0046] If the wafers of the batch to be processed do not have an exposure dose correction mark, the wafers of the batch to be processed are subjected to a normal process flow.
[0047] In some embodiments, the exposure dose correction dispatch method further includes configuring exposure dose correction process information of the wafers of the batch to be processed, wherein the exposure dose correction process information of the wafers of the batch to be processed includes configuring sub-process recipes and allocation and assembly information of the wafers of the batch to be processed, wherein the sub-process recipes are used to instruct the photolithography machine to perform corresponding processes on the wafers, and the allocation and assembly information is used to instruct the real-time dispatch system (RTD) to transfer the wafers processed by the photolithography machine to the corresponding chambers of the etching machine. Among them, the exposure dose correction process information of the wafers of the batch to be processed corresponds to the exposure dose correction mark, and the real-time dispatch system detects that the wafers of the batch to be processed have the exposure dose correction mark and the corresponding exposure dose correction process information, and the wafers of the batch to be processed can continue the process flow, and if the real-time dispatch system does not detect the corresponding exposure dose correction process information, the wafers of the batch to be processed are retained, that is, the process flow is stopped.
[0048] In some embodiments, the sub-process formula includes one or more of a product name, a semiconductor layer name, a reticle version, a photolithography machine name, an etching machine name, an etching machine chamber name, and a date. For example, the sub-process formula is 0090B023A102IN61B202307181138, where "0090B" is the product name, "023" is the semiconductor layer, "A1" is the mask version, "02" is the photolithography machine name, "IN61" is the etching machine name, "B" is the etching machine chamber name, and "202307181138" is the date.
[0049] In some embodiments, before assigning the batch of wafers to be processed to the photolithography machine, the method further includes:
[0050] The real-time dispatching system checks the status of the lithography machine and whether the sub-process recipe is obtained;
[0051] If the state of the lithography machine is normal and the sub-process recipe is obtained, the real-time dispatching system dispatches the wafers of the batch to be processed to the lithography machine; specifically, if the state of the lithography machine is normal, the real-time dispatching system checks whether the lithography machine has obtained the sub-process recipe. If the real-time dispatching system checks that the lithography machine has not obtained the sub-process recipe, the wafers of the batch to be processed are retained, that is, the process flow is stopped;
[0052] If the status of the lithography machine is abnormal, the real-time dispatching system will suspend dispatching wafers until the status of the lithography machine is restored.
[0053] In some embodiments, before allocating the photolithography wafer to a corresponding chamber of the etching machine for etching according to the allocation and assembly information, the method further includes:
[0054] Check the etching machine through a real-time dispatching system;
[0055] If the etching machine is in a normal state, the real-time dispatching system allocates the photolithography wafer to a corresponding chamber for etching according to the allocation and assembly information;
[0056] If the state of the etching machine is abnormal, the real-time dispatching system will suspend dispatching wafers until the state of the etching machine is restored.
[0057] In some embodiments, transmitting the sub-process recipe to a lithography machine includes:
[0058] The real-time dispatching system sends the exposure dose correction process information to the Manufacturing Execution System (MES);
[0059] The manufacturing execution system obtains a sub-process recipe from the exposure dose correction process information, and sends the sub-process recipe to an equipment automation programming system (Equipment Automation Programming, EAP);
[0060] The equipment automation programming system sends the sub-process recipe to the lithography machine.
[0061] In some specific embodiments, an identifier for exposure dose correction is configured for wafers of a batch to be processed with batch number "LOT-A", and exposure dose correction process information of the wafers of the batch to be processed is configured. The exposure dose correction process information includes first exposure dose correction process information, second exposure dose correction process information, third exposure dose correction process information, fourth exposure dose correction process information, fifth exposure dose correction process information and sixth exposure dose correction process information. The first exposure dose correction process information is L1, E1-A and SubRecipe1, the second exposure dose correction process information is L1, E1-B and SubRecipe2, the third exposure dose correction process information is L1, E1-C and SubRecipe3, the fourth exposure dose correction process information is L1, E2-A and SubRecipe4, the fifth exposure dose correction process information is L1, E2-B and SubRecipe5, and the sixth exposure dose correction process information is L1, E2-C and SubRecipe6. Among them, "L1" represents the name of the lithography machine; "E1-A", "E1-B", "E1-C", "E2-A", "E2-B" and "E2-C" represent the distribution of assembly information, E1 and E2 represent the names of the etching machines; A, B, C represent the chambers of the etching machine; SubRecipe1, SubRecipe2, SubRecipe3, SubRecipe4, SubRecipe5, SubRecipe6 represent sub-process recipes.
[0062] Figure 2 FIG. 1 is a schematic diagram of the exposure dose correction dispatch process in some specific embodiments of the present invention. Figure 2 The figure includes a photolithography machine L1, a first etching machine E1, a second etching machine E2, a real-time dispatching system RTD, a manufacturing execution system MES, and an equipment automation programming system EAP. The first etching machine E1 has a first chamber A, a second chamber B, and a third chamber C, and the second etching machine E2 has a first chamber A, a second chamber B, and a third chamber C.
[0063] Reference Figure 2, the first chamber A, the second chamber B and the third chamber B of the first etching machine E1 are not idle, the second chamber B and the third chamber C of the second etching machine E2 are not idle, and the first chamber A of the second etching machine E2 is idle. Therefore, the real-time dispatching system RTD selects the fourth exposure dose correction process information L1, E2-A and SubRecipe4, and then the real-time dispatching system RTD sends the sub-process recipe SubRecipe4 to the manufacturing execution system MES, the manufacturing execution system MES sends the sub-process recipe SubRecipe4 to the equipment automation programming system EAP, and the equipment automation programming system EAP sends the sub-process recipe SubRecipe4 to the lithography machine L1.
[0064] Reference Figure 2 The real-time dispatching system RTD checks the status of the lithography machine L1. If the real-time dispatching system RTD checks that the status of the lithography machine L1 is normal, the real-time dispatching system RTD checks whether the lithography machine L1 obtains the sub-process recipe SubRecipe4. If the lithography machine L1 obtains the sub-process recipe SubRecipe4, the real-time dispatching system RTD dispatches the wafers of the batch to be processed with the batch number "LOT-A" to the lithography machine L1. The lithography machine L1 performs lithography on the wafers of the batch to be processed with the batch number "LOT-A" according to the sub-process recipe SubRecipe4 to obtain the wafers after lithography.
[0065] Reference Figure 2 The manufacturing execution system MES selects the chamber of the etching machine for the photolithographic wafer with the batch number "LOT-A" according to the assigned assembly information "E2-A", and the real-time dispatching system RTD checks whether the status of the first chamber A of the second etching machine E2 is normal. If the status of the first chamber A of the second etching machine E2 is normal, the real-time dispatching system RTD dispatches the photolithographic wafer with the batch number "LOT-A" to the first chamber A of the second etching machine E2 for etching process.
[0066] The present invention also provides an exposure agent correction dispatch system, which includes an acquisition unit and a distribution unit. The acquisition unit is used to select exposure dose correction process information according to the idle situation of the etching machine, and the exposure dose correction process information includes a sub-process formula and distribution assembly information. The distribution unit is used to transmit the sub-process formula to the lithography machine, and distribute the wafers of the batch to be processed to the lithography machine, so that the lithography machine performs lithography on the wafers of the batch to be processed according to the sub-process formula to obtain lithography wafers, and then distributes the lithography wafers to the corresponding chamber of the etching machine for etching according to the distribution assembly information.
[0067] In some embodiments, the acquisition unit is a real-time dispatching system, which is used to select exposure dose correction process information for the wafers in the batch to be processed according to the idle status of the etching machine; the allocation unit includes a manufacturing execution system and an equipment automation programming system, and the manufacturing execution system is used to obtain a sub-process recipe from the exposure dose correction process information and send the sub-process recipe to the equipment automation programming system; the equipment automation programming system is used to send the sub-process recipe to the lithography machine.
[0068] The present invention also provides a device, comprising:
[0069] processor;
[0070] a memory for storing processor-executable instructions;
[0071] Wherein, when the processor is configured to execute the instructions of the memory, the exposure dose correction dispatch method is implemented.
[0072] The present invention also provides a computer-readable storage medium, comprising computer instructions, and when the computer instructions are executed by a processor, the exposure dose correction dispatch method is implemented.
[0073] Computer readable storage media can be, for example, but not limited to, electrical, magnetic, optical, electromagnetic, infrared, or semiconductor systems, devices or components, or any combination thereof. More specific examples of computer readable storage media include: an electrical connection with one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read only memory (ROM), an erasable programmable read only memory (EPROM) or flash memory, an optical fiber, a portable compact disk read only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination thereof. In this document, a computer readable storage medium can be any tangible medium containing or storing a program that can be used by or in conjunction with an instruction execution system, device, or device.
[0074] The program code contained on the computer-readable storage medium may be transmitted using any appropriate medium, including but not limited to wireless, wire, optical cable, or any suitable combination of the foregoing.
[0075] Computer program code for performing the operations of the present specification may be written in one or more programming languages or a combination thereof, such as Java, Smalltalk, C++, C, etc. The program code may execute entirely on the user's computer, partially on the user's computer, as a stand-alone software package, partially on the user's computer and partially on a remote computer, or entirely on the remote computer or server.
[0076] Although the embodiments of the present invention are described in detail above, it is obvious to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as described in the claims. Moreover, the present invention described herein may have other embodiments and may be implemented or realized in a variety of ways.
Claims
1. A method for correcting exposure dose, characterized in that: include: Selecting exposure dose correction process information according to the idle situation of the etching machine, wherein the exposure dose correction process information includes a sub-process recipe and allocation assembly information; The sub-process recipe is transmitted to a photolithography machine, and a batch of wafers to be processed is assigned to the photolithography machine. The photolithography machine performs photolithography on the batch of wafers to be processed according to the sub-process recipe to obtain photolithography wafers; The photolithography wafer is allocated to a corresponding chamber of the etching machine for etching according to the allocation and assembly information.
2. The exposure dose correction dispatch method according to claim 1, characterized in that: Before selecting the exposure dose correction process information according to the idle situation of the etching machine, it also includes: Check whether the wafers in the batch to be processed have exposure dose correction marks; If the wafers of the batch to be processed have an exposure dose correction mark, the exposure dose correction process information is selected according to the idle situation of the etching machine.
3. The exposure dose correction dispatch method according to claim 1 or 2, characterized in that: It also includes an identification for configuring exposure dose correction for wafers in a batch to be processed, which is used to identify that the wafers in the batch to be processed need to undergo light exposure dose correction.
4. The exposure dose correction dispatch method according to claim 1, characterized in that: Also included is exposure dose correction process information for configuring the wafer batch to be processed.
5. The exposure dose correction dispatch method according to claim 4, characterized in that: The exposure dose correction process information of the wafer batch to be processed is configured, including: Configure sub-process recipes and assign assembly information for the wafer batch to be processed.
6. The exposure dose correction dispatch method according to claim 1, characterized in that: Before assigning the batch of wafers to be processed to the photolithography machine, the method further includes: Checking the status of the lithography machine and whether the sub-process recipe is obtained; If the status of the lithography machine is normal and the sub-process recipe is obtained, the wafer batch to be processed is assigned to the lithography machine.
7. The exposure dose correction dispatch method according to claim 1, characterized in that: Before allocating the photolithography wafer to the corresponding chamber of the etching machine for etching according to the allocation and assembly information, the method further includes: Inspecting the etching machine; If the etching machine is in a normal state, the photolithography wafer is allocated to a corresponding chamber for etching according to the allocation and assembly information.
8. The exposure dose correction dispatch method according to claim 1, characterized in that: The step of selecting exposure dose correction process information according to the idle state of the etching machine includes: The real-time dispatching system selects exposure dose correction process information for the wafers of the processing batch according to the idle status of the etching machine.
9. The exposure dose correction dispatch method according to claim 1, characterized in that: The step of transmitting the sub-process recipe to a photolithography machine comprises: The real-time dispatching system sends the exposure dose correction process information to the manufacturing execution system; The manufacturing execution system obtains a sub-process recipe from the exposure dose correction process information, and sends the sub-process recipe to the equipment automation programming system; The equipment automation programming system sends the sub-process recipe to the lithography machine.
10. An exposure agent correction delivery system, characterized in that: It includes an acquisition unit and an allocation unit. The acquisition unit is used to select exposure dose correction process information according to the idle situation of the etching machine. The exposure dose correction process information includes a sub-process recipe and allocation assembly information. The allocation unit is used to transmit the sub-process recipe to the lithography machine, and assign the wafers of the batch to be processed to the lithography machine, so that the lithography machine performs lithography on the wafers of the batch to be processed according to the sub-process recipe to obtain lithography wafers, and then assigns the lithography wafers to the corresponding chambers of the etching machine for etching according to the allocation assembly information.
11. A device, characterized in that: include: processor; a memory for storing processor-executable instructions; Wherein, when the processor is configured to execute the instructions of the memory, the exposure dose correction dispatch method as described in any one of claims 1 to 9 is implemented.
12. A computer-readable storage medium, characterized in that: The invention comprises computer instructions, which, when executed by a processor, implement the exposure dose correction dispatch method according to any one of claims 1 to 9.