Microwave heat treatment device

Abstract

The present invention relates to a microwave heat treatment apparatus capable of uniformly heating a semiconductor substrate by forming a dielectric material inside a waveguide and transmitting microwaves to the inside of a processing chamber through the dielectric material, the microwave heat treatment apparatus comprising: a processing chamber having a predetermined space therein; a microwave generating part arranged outside the processing chamber and used for generating microwaves; and a waveguide, one end of which is coupled to the microwave generation unit and the other end of which is inserted into the processing chamber, at least one groove being formed in one surface of the portion inserted into the processing chamber, microwaves generated by the microwave generating portion are transmitted into the processing chamber through a dielectric material formed in at least one of the internal space and the groove so as to heat a substrate disposed in the processing chamber.

Description

TECHNICAL FIELD

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to Korean Patent Application No. 10-2024-0039866, filed on March 22, 2024, the entire contents of which are incorporated herein by reference.

[0003] The present application relates to a microwave heat treatment apparatus, and more particularly, to a microwave heat treatment apparatus that uniformly heats a semiconductor substrate using microwaves. BACKGROUND

[0004] An annealing process in a semiconductor manufacturing process is used for rearrangement of amorphous material, removal of defects of crystalline material, removal of dopants of amorphous or crystalline material, and recrystallization.

[0005] Such an annealing process includes a furnace heat treatment process, a rapid thermal process (RTP), a flash lamp heat treatment process, and a laser heat treatment process.

[0006] However, the furnace heat treatment process uniformly performs the annealing process at a high temperature of 800 to 1100°C, and thus, the uniform annealing process performed in a semiconductor device in which a plurality of materials having different temperature characteristics are mixed will reduce the overall yield and performance of the semiconductor device.

[0007] Like the furnace heat treatment process, the rapid thermal process performs heat treatment at a high temperature of 800 to 1100°C, and thus, the performance of the semiconductor material will be reduced, and there will be a problem in which the dopant is unnecessarily diffused to the surrounding material.

[0008] Also, the flash lamp heat treatment process and the laser heat treatment process move the boundary of the impurity region in the heat treatment process, and the region within the laser spot size of several mm in diameter is activated, but this is much smaller than the entire region that needs to be activated on the wafer surface, and thus, it is necessary to move and perform the heat treatment process several times to cover the entire doped site each time, and it is not possible to secure the heat treatment uniformity in the depth direction, and thus, the reproducibility and mass productivity are limited. As a result, there is a problem in which the pattern effect in which the region is overlapped or missing due to the pattern formation occurs, and thus, the productivity is reduced due to the pattern effect.

[0009] In order to solve such a problem, conventionally, a heat treatment process is performed using microwaves.

[0010] This heat treatment process using microwaves can improve the performance of semiconductor devices, minimize unnecessary diffusion, and also be used for semiconductor processes such as heat treatment of dielectric materials having metals (e.g., Al, Ni, etc.) that cannot be used in heat treatment processes at 800°C or higher, due to the lower process temperature.

[0011] Further, the heat treatment process using microwaves has the following priority, in that the state of the material changes due to an increase in the sample thermal temperature, and in that a process effect occurs due to non-thermal effects caused by the kinetic energy of sample atoms affected by microwaves.

[0012] As described above, in the case of performing a heat treatment process using microwaves, it is necessary to uniformly release microwaves to a semiconductor substrate to uniformly heat the semiconductor substrate. SUMMARY

[0013] TECHNICAL PROBLEM

[0014] The present application is proposed in consideration of the necessity as described above, and the object of the present application is to provide a microwave heat treatment apparatus in which a dielectric material is formed inside a waveguide, and microwaves are transmitted to the inside of a process chamber through the dielectric material to uniformly heat a semiconductor substrate.

[0015] TECHNICAL SOLUTION

[0016] The microwave heat treatment apparatus of the present application for achieving the object is characterized by comprising: a process chamber having a prescribed space inside; a microwave generation portion provided outside the process chamber for generating microwaves; and a waveguide having one end coupled to the microwave generation portion and the other end inserted into the inside of the process chamber, one side of the portion inserted into the inside of the process chamber being formed with at least one groove, and microwaves generated by the microwave generation portion being transmitted to the inside of the process chamber through the dielectric material formed in at least one of the inside space and the groove to heat a substrate provided in the process chamber.

[0017] Further, the microwave heat treatment apparatus of the present application is characterized in that, when the microwave generation portion is formed in a plurality and the waveguide is formed in one, the waveguide is provided in such a manner as to pass through the process chamber, and one end and the other end of the waveguide are coupled to at least one microwave generation portion, respectively.

[0018] Further, the microwave heat treatment apparatus of the present application is characterized in that, when the microwave generation portion is formed in a plurality and the waveguide is formed in one, the waveguide is provided in such a manner as to pass through the process chamber in a curved manner from one side surface to an adjacent side surface, and one end and the other end of the waveguide are coupled to at least one microwave generation portion, respectively.

[0019] Further, the microwave heat treatment apparatus of the present application is characterized in that, when a plurality of microwave generating portions are formed and the number of waveguides is the same as or less than the number of microwave generating portions, at least one waveguide is formed laterally and the remaining waveguides are formed longitudinally.

[0020] Further, the microwave heat treatment apparatus of the present application is characterized in that, when a plurality of microwave generating portions are formed and the number of waveguides is the same as or less than the number of microwave generating portions, the waveguides are disposed facing each other across the substrate.

[0021] Further, the microwave heat treatment apparatus of the present application is characterized in that the waveguides disposed facing each other across the substrate are parallel to each other and are disposed so that the center lines of the grooves formed in the respective waveguides are parallel to each other.

[0022] Further, the microwave heat treatment apparatus of the present application is characterized in that the waveguides disposed facing each other across the substrate are parallel to each other and are disposed so that the center lines of the grooves formed in the respective waveguides are parallel to each other and the positions of the grooves coincide with each other.

[0023] Further, the microwave heat treatment apparatus of the present application is characterized in that the waveguides disposed facing each other across the substrate are disposed so that the center lines of the grooves formed in the respective waveguides are not parallel to each other but form an arbitrary angle.

[0024] Further, the microwave heat treatment apparatus of the present application is characterized in that the dielectric material is formed in the entire inner space of the waveguide.

[0025] Further, the microwave heat treatment apparatus of the present application is characterized in that the dielectric material is formed in a part of the inner space of the waveguide.

[0026] Further, the microwave heat treatment apparatus of the present application is characterized in that the dielectric material is formed in a groove formed in the waveguide and forms a dielectric rod which extends into the inside of the waveguide.

[0027] Further, the microwave heat treatment apparatus of the present application is characterized in that the dielectric material is formed in a groove formed in the waveguide and forms a dielectric rod which extends into the inside of the waveguide, and the height of the dielectric rod is the same as the thickness of the groove.

[0028] Further, the microwave heat treatment apparatus of the present application is characterized in that the dielectric material is formed in a groove formed in the waveguide and forms a dielectric rod which extends into the inside of the waveguide, and the height of the dielectric rod is greater than the thickness of the groove.

[0029] Also, the microwave heat treatment apparatus of the present application is characterized in that the dielectric material is formed in a groove formed in the waveguide tube to form a dielectric rod, and the height of the dielectric rod is less than the thickness of the groove.

[0030] Also, the microwave heat treatment apparatus of the present application is characterized in that the dielectric material is formed in a groove formed in the waveguide tube to form a dielectric rod, and each of the dielectric rods is formed to have a different height from each other.

[0031] Also, the microwave heat treatment apparatus of the present application is characterized in that the dielectric material is formed in a groove formed in the waveguide tube to form a dielectric rod, and the cross-sectional shape of the dielectric rod protruding outside the groove is formed in one of a quadrangle, a semicircle, a semi-ellipse, a triangle, and a trapezoid.

[0032] Also, the microwave heat treatment apparatus of the present application is characterized in that at least one groove formed in one face of the waveguide tube is formed in one of a circle, a quadrangle, a triangle, an ellipse, and a rectangle.

[0033] Also, the microwave heat treatment apparatus of the present application is characterized in that at least one groove is formed in one face of the waveguide tube at equal intervals.

[0034] Also, the microwave heat treatment apparatus of the present application is characterized in that at least one groove is formed in one face of the waveguide tube at equal intervals to form at least one row.

[0035] Also, the microwave heat treatment apparatus of the present application is characterized in that the waveguide tube is formed by arranging at least one waveguide tube having at least one groove formed at equal intervals in one face in parallel.

[0036] Details of other embodiments are included in the "DETAILED DESCRIPTION" and the "DRAWINGS".

[0037] Advantages and / or features of the present application and a method for achieving the same will be become apparent from the detailed description given below with reference to the accompanying drawings. Figure One The advantages and / or features of the present application will become apparent from the detailed description given below with reference to the accompanying drawings.

[0038] However, the present application is not limited to the structures of the embodiments disclosed below, but can be implemented in various different forms, and the embodiments disclosed in the present specification make the disclosure of the present application complete, and are provided in order to inform those skilled in the art to which the present application pertains of the full scope of the present application, and the present application is defined by the scope of the claims of the invention.

[0039] Effects of the Invention

[0040] According to the present application, the dielectric material is formed inside the waveguide, the microwave is transmitted to the inside of the processing chamber through the dielectric material, and the slots formed on one surface of the waveguide can be formed at a compact interval, thereby uniformly heating the substrate. BRIEF DESCRIPTION OF DRAWINGS

[0041] Figures 1 to 3 A diagram for briefly showing the structure of a microwave heat treatment apparatus according to an embodiment of the present application.

[0042] Figures 4 to 9 A diagram for illustratively showing the arrangement of a waveguide suitable for the present application.

[0043] Figure 10 A diagram for illustratively showing the dielectric material formed in the internal space and the slots of the waveguide according to the present application.

[0044] Figure 11 A diagram for illustratively showing the height of the dielectric rod formed in the slots of the waveguide according to the present application.

[0045] Figure 12 A diagram for illustratively showing the cross section of the dielectric rod formed in the slots of the waveguide according to the present application.

[0046] Figure 13 A diagram for illustratively showing the shape of the slots formed in the waveguide according to the present application.

[0047] Figure 14 and Figure 15 A diagram for illustratively showing the arrangement of the slots formed in the waveguide according to the present application.

[0048] Figure 16 A diagram for illustratively showing the waveguide suitable for the present application.

[0049] Figure 17 A diagram for illustratively showing the waveguide and the substrate support suitable for the present application.

[0050] Figure 18 A diagram for illustratively showing the interval of the slots formed in the waveguide according to the prior art.

[0051] Figure 19 A diagram for illustratively showing the interval of the slots formed in the waveguide according to the present application. DETAILED DESCRIPTION

[0052] Before the present application is disclosed and described, it is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting unless specifically defined as such. The description is not intended to be limited in scope by any of the embodiments described herein. The description is intended to cover any and all modifications and equivalents within the scope of the application including such concepts as modified or replaced parts of an apparatus or alternate methods for performing a process or method described herein.

[0053] That is, the terms used in the present specification are used to describe the preferred embodiments of the present application only and are not intended to limit the specific embodiments of the present application, and the terms are defined in consideration of the multiple possibilities of the present application.

[0054] Also, in the present specification, unless explicitly stated otherwise in the context, the expression of the singular includes the expression of the plural, and similarly, even if not expressed as plural, the meaning of the singular can be included.

[0055] Throughout the present specification, when described that one structural element "includes" other structural element, unless specifically stated otherwise, it can mean that any other structural element can also be included, and not mean that other structural element is excluded.

[0056] Further, when described that one structural element is "present or connected and disposed inside" other structural element, the structural element can be directly connected or contacted and disposed with other structural element, and for the case of being disposed at a prescribed distance, a third structural element or unit that fixes or connects the corresponding structural element to other structural element can be present, and the description of the third structural element or unit can be omitted.

[0057] On the contrary, when described that one structural element is "directly connected" or "directly coupled" to other structural element, it should be understood that there is no third structural element or unit.

[0058] Also, other expressions that explain the relationship between structural elements, i.e., "between" and "right in the middle" or "adjacent" and "directly adjacent" and the like have the same intent.

[0059] Also, in the present specification, when the terms "one side", "the other side", "one side", "the other side", "first", "second" and the like are used, they are used in order to clearly distinguish other structural elements with respect to one structural element, and the meaning of the corresponding structural element cannot be limitedly used by the terms as described above.

[0060] Also, in the present specification, when the terms related to positions such as "upper", "lower", "left", "right" and the like are used, it should be understood that they indicate relative positions in the corresponding drawing with respect to the corresponding structural element, and should not be understood as indicating absolute positions by the position-related terms unless specific absolute positions are specified with respect to the positions.

[0061] Further, in the specification of the present application, when the terms "… part", "… device", "module", "apparatus" and the like are used, they mean a unit capable of processing at least one function or work, which can be implemented by hardware or software or a combination of hardware and software.

[0062] Furthermore, in the process of assigning reference numerals to the structural elements of each figure in this specification, the same reference numerals are assigned to the same structural elements throughout the specification, so that the same structural elements have the same reference numerals even if they are shown in different figures.

[0063] In the accompanying drawings of this specification, the dimensions, positions, and connection relationships of the structural elements constituting the present invention are enlarged or reduced or some structural elements are omitted in order to fully and clearly convey the idea of ​​the present invention or for the convenience of explanation. Therefore, the scale or scale may not be strict.

[0064] Furthermore, in the following description of the present invention, detailed descriptions of structures deemed to unnecessarily obscure the essence of the invention, such as well-known technologies including prior art, may be omitted.

[0065] Hereinafter, with reference to the accompanying drawings, the microwave heat treatment apparatus of a preferred embodiment of the present invention will be described in detail.

[0066] Figure 1 A diagram illustrating the structure of a microwave heat treatment apparatus according to an embodiment of the present invention.

[0067] like Figure 1 As shown, a microwave heat treatment apparatus 100 according to an embodiment of the present invention may include a processing chamber 110, a vacuum pump 120, a microwave generator 130, a temperature measuring unit 140, a waveguide 150, etc.

[0068] The processing chamber 110 may have a defined internal space and may have a structure that can maintain the internal space in a vacuum state.

[0069] Therefore, a vacuum pump 120 capable of venting gas from the interior of the processing chamber 110 can be provided in the processing chamber 110, and an exhaust device capable of injecting gas into the interior of the chamber can also be provided.

[0070] The microwave generator 130 can be installed outside the processing chamber 110 and can generate microwaves under the control of the control unit (not shown).

[0071] In embodiments of the present invention, the microwave generator 130 may be implemented as a magnetron, but is not limited thereto.

[0072] The temperature measuring unit 140 can measure the temperature of the semiconductor substrate 10, which is subject to heat treatment, and provide the measured value to the control unit (not shown).

[0073] One end of the waveguide 150 can be connected to the microwave generator 130, and the other end can be inserted into the processing chamber 110.

[0074] At least one groove 155 may be formed on one side of the portion of the waveguide 150 that is inserted into the processing chamber 110 (e.g., the upper or lower surface of the waveguide).

[0075] The waveguide 150 can transmit microwaves generated by the microwave generator 130 into the processing chamber 110 to heat the substrate 10 disposed in the processing chamber 110.

[0076] The waveguide 150 may form a dielectric material 160 at at least one location in the internal space and the groove 155, through which microwaves generated by the microwave generator 130 are transmitted to the processing chamber 110 to heat the substrate 10 disposed in the processing chamber 110.

[0077] like Figure 1 As shown, the waveguide 150 can be disposed on the lower surface of the processing chamber 110 to place the substrate 10 on the upper part of the waveguide 150, and disposed on the upper surface inside the processing chamber 110 to irradiate microwaves onto the substrate 10 disposed on the lower surface of the processing chamber 110. It can also be disposed on the side inside the processing chamber 110 to irradiate microwaves onto the substrate 10 disposed on the lower surface of the processing chamber 110.

[0078] When the waveguide 150 is positioned on the lower surface of the processing chamber 110 and the substrate 10 is positioned on the upper surface of the waveguide 150, as follows: Figure 2 As shown, a spacer 170 can be provided on the upper part of the waveguide 150, which can separate the waveguide 150 from the substrate 10 and adjust the spacing between the substrate 10 and the groove 155 (or the dielectric rod 165 formed in the groove 155) formed on the upper surface of the waveguide 150.

[0079] Furthermore, when the waveguide 150 is disposed on the lower surface of the processing chamber 110, and the substrate 10 is disposed on the upper surface of the waveguide 150, such as Figure 3 As shown, a substrate support 180 supporting the substrate 10 and a substrate support drive 185 that raises or lowers the substrate support 180 to adjust the spacing between the substrate 10 and the groove 155 (or the dielectric rod 165 formed in the groove 155) formed on the upper surface of the waveguide 150 can be provided inside the processing chamber 110.

[0080] On the other hand, in embodiments of the present invention, multiple microwave generating units 130 may be formed, and each microwave generating unit 130 may generate microwaves with the same wavelength (frequency) or microwaves with different wavelengths (frequency).

[0081] As described above, when multiple microwave generating units 130 are formed, the waveguide 150 can be implemented as a single waveguide, or as the same number of waveguides as the microwave generating units 130, or as a number of waveguides less than the number of microwave generating units 130.

[0082] When multiple microwave generators 130 are formed, and the waveguide 150 is formed from a single waveguide, such as Figure 4 As shown, the waveguide 150 can be disposed through the opposite sides of the processing chamber 110, and one end and the other end of the waveguide 150 can be connected to at least one microwave generator 130 respectively.

[0083] For example, when there are two microwave generators 130, the two ends of the waveguide 150 can be connected to each microwave generator 130 respectively. When there are three microwave generators 130, one end of the waveguide 150 can be connected to one microwave generator 130 and the other end can be connected to two microwave generators 130.

[0084] Furthermore, when multiple microwave generators 130 are formed, and the waveguide 150 is formed from a single waveguide, such as Figure 5 As shown, the waveguide 150 is formed in such a way that it bends and passes through one side of the processing chamber 110 toward the adjacent side, and one end of the waveguide 150 and the other end can be connected to at least one microwave generator 130 respectively.

[0085] Furthermore, when multiple microwave generating units 130 are formed, and the number of waveguides 150 is the same as or less than the number of microwave generating units 130, such as Figure 6 As shown, at least one waveguide 150 is formed laterally on the lower surface of the processing chamber 110, and the remaining waveguides 150 may be formed longitudinally on the side surface of the processing chamber 110.

[0086] Furthermore, when multiple microwave generating units 130 are formed, and the number of waveguides 150 is the same as or less than the number of microwave generating units 130, such as... Figure 7 As shown, at least one waveguide can be formed laterally on the lower surface of the processing chamber 110, and the remaining waveguides are formed laterally on the upper surface of the processing chamber 110, and can be formed facing each other with the waveguides formed on the lower surface of the processing chamber 110 across the substrate 10.

[0087] In this case, such as Figure 7 As shown, the waveguides 150, which are arranged facing each other across the substrate 10, are parallel to each other and can be configured such that the center lines of the grooves formed in each waveguide 150 are parallel to each other, and the positions of the grooves 155 match each other.

[0088] And, as Figure 8As shown, the waveguides 150, which are arranged facing each other across the substrate 10, are parallel to each other and can be configured such that the center lines of the grooves formed in each waveguide 150 are parallel to each other, and the positions of the grooves 155 match each other.

[0089] And, as Figure 9 As shown, the waveguides 150 arranged facing each other across the substrate 10 are such that the center lines of the grooves formed in each waveguide 150 are not parallel to each other, but can form any angle θ.

[0090] On the other hand, as described above, a dielectric material 160 may be formed at least at one location in the internal space of the waveguide 150 and in the groove 155 of the waveguide 150.

[0091] In embodiments of the present invention, the dielectric material 160 may be formed of quartz, but is not limited thereto.

[0092] Among them, such as Figure 10 As shown in part (a), the dielectric material 160 formed in the internal space of the waveguide 150 can be formed throughout the internal space of the waveguide.

[0093] And, as Figure 10 As shown in parts (b), (c), (g), and (h), the dielectric material 160 formed in the internal space of the waveguide 150 may be formed only in a portion of the internal space of the waveguide.

[0094] Furthermore, dielectric material 160 can be formed in the groove 155 to form a dielectric rod 165, the groove 155 being formed in the waveguide 150.

[0095] like Figure 10 As shown in parts (a) to (c), the dielectric material 160 may be uniformly formed in the internal space and groove 155 of the waveguide 150. Figure 10 As shown in part (d), it may not be formed inside the waveguide 150, but only in the slot 155, as... Figure 10 As shown in parts (e) and (f), it may not be formed inside the waveguide 150, but only in the groove 155. The dielectric rod 165 formed in the groove 155 may extend into the interior of the waveguide 150, as shown in the figure. Figure 10 As shown in portions (g) and (h), a portion of the internal space of the waveguide and a groove 155 may be formed. The dielectric rod 165 formed in the groove 155 may extend into the interior of the waveguide 150, but is not limited thereto.

[0096] As mentioned above, such as Figure 11 As shown in part (a), the height of the dielectric rod 165 formed in the groove 155 can be the same as the thickness of the groove 155, such asFigure 11 As shown in part (b), the height can be greater than the thickness of groove 155, such as Figure 11 As shown in section (c), the height may be less than the thickness of groove 155, such as Figure 11 As shown in section (d), it can also be formed at different heights, but is not limited to this.

[0097] As mentioned above, such as Figure 11 As shown in part (b), the height of the dielectric rod 165 formed in the groove 155 is greater than the thickness of the groove 155, as... Figure 12 As shown, the cross-sectional shape of the dielectric rod 165 protruding out of the groove 155 can be at least one of the following: quadrilateral, semi-circular, semi-elliptical, triangular, curved groove, and trapezoidal shape, but is not limited to these.

[0098] On the other hand, as described above, at least one groove 155 can be formed on the side of the waveguide 150 that is inserted into the processing chamber 110, such as... Figure 13 As shown, it can be formed into one of the following shapes: circle, quadrilateral, triangle, ellipse, or rectangle, but is not limited to these.

[0099] like Figure 14 As shown in parts (a), (b), and (e), for a groove 155 formed on one side of the waveguide 150, at least one groove 155 having the same shape can be formed at a predetermined interval, such as... Figure 14 As shown in part (c), a groove 155 can be formed, as Figure 14 As shown in part (d), grooves 155 of different shapes can be formed at predetermined intervals, and the size of the grooves 155 can gradually increase outward from the center of the substrate 10, such as... Figure 14 As shown in section (f), at least one groove 155 having the same shape can be arranged at different intervals, such as Figure 14 As shown in part (g), at least one groove 155 having the same shape is formed symmetrically to each other and spaced apart at different intervals. The spacing between the grooves can gradually decrease outward from the part where the center of the substrate 10 is located, but is not limited thereto.

[0100] The groove 155 formed on one side of the waveguide 150 may be formed only in the portion of the part inserted into the processing chamber 110 that corresponds to the position of the substrate 10, or it may be formed in the entire portion inserted into the processing chamber 110, but it is not limited to this.

[0101] In an embodiment of the present invention, as described above, at least one groove 155 can be formed at equal intervals on one side of the waveguide 150, such as... Figure 15As shown, on one side of the waveguide 150, at least one slot 155 can be formed at equal intervals and in at least one row. In this case, as Figure 15 As shown in parts (b) to (d), the positions of the grooves 155 forming the rows can be aligned with the grooves 155 of the adjacent rows, as shown in the diagram. Figure 15 As shown in part (e), it can be formed offset from the slots 155 in the adjacent row.

[0102] In embodiments of the present invention, such as Figure 16 As shown, the waveguide 150 can be formed by arranging at least one waveguide with a row of slots 155 side by side.

[0103] In an embodiment of the present invention, when the waveguide 150 is disposed on the lower surface of the processing chamber 110, such as Figure 1 , Figure 4 and Figure 5 As shown, the substrate 10 can be directly disposed on the upper part of the waveguide 150, or, as... Figure 2 As shown, it can be set on the upper part of the spacer 170, which is located on the upper surface of the waveguide 150.

[0104] And, as Figure 3 As shown, it can be disposed on the upper part of the substrate support 180, which is disposed within the processing chamber 110, or as... Figures 7 to 9 As shown, it can be disposed on the upper part of the substrate support 190, which is disposed on the upper surface of the waveguide 150.

[0105] The substrate support 190 is disposed on the upper surface of the waveguide 150 and supports the substrate 10, which is to be heat-treated, disposed on the upper surface.

[0106] Furthermore, the substrate support 190 can separate the waveguide 150 from the substrate 10, and can adjust the spacing between the substrate 10 and the groove 155 (or the dielectric rod 165 formed in the groove 155) formed on the upper surface of the waveguide 150.

[0107] like Figure 17 As shown, in this substrate support 190, at least one groove 195 can be provided at a predetermined interval, and a dielectric material 160 can be formed in each groove 195.

[0108] As described above, in embodiments of the present invention, a dielectric material 160 may be formed in at least one location within the internal space of the waveguide 150 and in the groove 155.

[0109] As described above, when a dielectric material 160 is formed at least at one location in the internal space and groove 155 of the waveguide 150, the microwaves generated by the microwave generator 130 are transmitted through the dielectric material 160 formed at least at one location in the internal space and groove 155 of the waveguide 150.

[0110] When microwaves pass through a dielectric material 160, the wavelength of the microwaves is reduced due to the dielectric constant of the dielectric material.

[0111] As described above, when the wavelength of microwaves decreases, microwaves can easily escape through the groove 155 formed on one side of the waveguide 150. The groove 155 can be formed more compactly on one side of the waveguide 150, thereby allowing the substrate 10 to be heated more uniformly when heated.

[0112] Usually, such as Figure 18 As shown, a groove 155 is formed on one side of the waveguide 150 where the dielectric material 160 is not formed, at a position of λ / 4 of the wavelength supplied inside the waveguide 150.

[0113] On the contrary, such as Figure 19 As shown, when a dielectric material 160 is formed in the internal space of the waveguide 150, the wavelength of the microwave supplied from the microwave generator 130 is reduced within the dielectric material due to the dielectric constant of the dielectric material. The position of the groove 155 is determined to be λ / 4 of the reduced wavelength. Therefore, the spacing of the grooves 155 formed on one side of the waveguide 150 can be formed more compactly.

[0114] When the slots 155 are formed in a compact manner, the substrate 10 can be heated uniformly when heated by microwaves.

[0115] That is, when the spacing of the grooves 155 is formed compactly, more interference zones of microwaves reaching the substrate 10 can be formed, thereby guiding a uniform temperature rise within the substrate 10.

[0116] In this case, the microwave interference range can be formed by adjusting the spacing between the substrate 10 and the slot 155 formed on one side of the waveguide 150 (or the dielectric rod 165 formed on the slot 155), the spacing between the slots 155, the frequency, etc.

[0117] The above examples illustrate several preferred embodiments of the present invention. However, the descriptions of the various embodiments described in this "Detailed Description" section are merely illustrative. Anyone skilled in the art can understand from the above description that various modifications and implementations of the present invention are possible, or equivalent implementations can be performed.

[0118] Furthermore, the present invention can be implemented in various forms; therefore, the present invention is not limited to the above description. The above description completes the disclosure of the present invention and is provided to inform those skilled in the art of the full scope of the present invention. The present invention is defined by the claims.

[0119] Explanation of reference numerals in the attached figures

[0120] 110: Processing Chamber

[0121] 120: Vacuum pump

[0122] 130: Microwave Generator

[0123] 140: Temperature Measurement Department

[0124] 150: Waveguide

[0125] 155, 175: slot

[0126] 160: Dielectric materials

[0127] 165: Dielectric rod

[0128] 170: Spare sheet

[0129] 180, 190: Substrate support

[0130] 185: Substrate support drive unit.

Claims

1. A microwave heat treatment apparatus, characterized in that, include: The processing chamber has a defined internal space; A microwave generator is located outside the processing chamber and is used to generate microwaves; as well as A waveguide is connected at one end to the microwave generator and inserted into the interior of the processing chamber at the other end. At least one groove is formed on one side of the portion inserted into the interior of the processing chamber. Microwaves generated by the microwave generator are transmitted into the processing chamber through a dielectric material formed in at least one location in the interior space and the groove to heat the substrate disposed in the processing chamber.

2. The microwave heat treatment apparatus according to claim 1, characterized in that, When multiple microwave generators are formed and one waveguide is formed, the waveguide is arranged to penetrate the processing chamber, and one end and the other end of the waveguide are respectively connected to at least one microwave generator.

3. The microwave heat treatment apparatus according to claim 1, characterized in that, When multiple microwave generators are formed and one waveguide is formed, the waveguide is arranged in a manner that bends through from one side of the processing chamber toward the adjacent side, and one end and the other end of the waveguide are respectively connected to at least one microwave generator.

4. The microwave heat treatment apparatus according to claim 1, characterized in that, When multiple microwave generating units are formed, and the number of waveguides is the same as or less than the number of microwave generating units, at least one waveguide is formed laterally, and the remaining waveguides are formed longitudinally.

5. The microwave heat treatment apparatus according to claim 1, characterized in that, When multiple microwave generating units are formed, and the number of waveguides is the same as or less than the number of microwave generating units, the waveguides are arranged facing each other across a substrate.

6. The microwave heat treatment apparatus according to claim 5, characterized in that, The waveguides, which are arranged facing each other across the substrate, are parallel to each other and are configured such that the center lines of the grooves formed in each waveguide are parallel to each other.

7. The microwave heat treatment apparatus according to claim 5, characterized in that, The waveguides, which are arranged facing each other across the substrate, are parallel to each other and are configured such that the center lines of the grooves formed in each waveguide are parallel to each other and the positions of the grooves match each other.

8. The microwave heat treatment apparatus according to claim 5, characterized in that, The waveguides, which are arranged facing each other across the substrate, are configured such that the center lines of the grooves formed in each waveguide are not parallel to each other, but form an arbitrary angle.

9. The microwave heat treatment apparatus according to claim 1, characterized in that, The dielectric material is formed throughout the entire internal space of the waveguide.

10. The microwave heat treatment apparatus according to claim 1, characterized in that, The dielectric material is formed in a portion of the internal space of the waveguide.

11. The microwave heat treatment apparatus according to claim 1, characterized in that, The dielectric material is formed in the groove and forms a dielectric rod, the groove being formed in the waveguide. The dielectric rod extends into the waveguide.

12. The microwave heat treatment apparatus according to claim 1, characterized in that, The dielectric material is formed in the groove and forms a dielectric rod, the groove being formed in the waveguide. The height of the dielectric rod is the same as the thickness of the groove.

13. The microwave heat treatment apparatus according to claim 1, characterized in that, The dielectric material is formed in the groove and forms a dielectric rod, the groove being formed in the waveguide. The height of the dielectric rod is greater than the thickness of the groove.

14. The microwave heat treatment apparatus according to claim 1, characterized in that, The dielectric material is formed in the groove and forms a dielectric rod, the groove being formed in the waveguide. The height of the dielectric rod is less than the thickness of the groove.

15. The microwave heat treatment apparatus according to claim 1, characterized in that, The dielectric material is formed in the groove and forms a dielectric rod, the groove being formed in the waveguide. Each dielectric rod has a different height relative to the others.

16. The microwave heat treatment apparatus according to claim 1, characterized in that, The dielectric material is formed in the groove and forms a dielectric rod, the groove being formed in the waveguide. The cross-sectional shape of the dielectric rod protruding out of the groove is formed as one of the following: quadrilateral, semi-circular, semi-elliptical, triangular, or trapezoidal.

17. The microwave heat treatment apparatus according to claim 1, characterized in that, At least one groove formed on one side of the waveguide is formed in one of the following shapes: circular, quadrilateral, triangular, elliptical, or rectangular.

18. The microwave heat treatment apparatus according to claim 1, characterized in that, At least one slot is formed on one side of the waveguide at equal intervals.

19. The microwave heat treatment apparatus according to claim 18, characterized in that, At least one slot is formed on one side of the waveguide at equal intervals and forms at least one row.

20. The microwave heat treatment apparatus according to claim 1, characterized in that, The waveguide is formed by arranging at least one waveguide with at least one groove formed on one side at equal intervals.

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