Angle resolution scattering damage detection system adopting array detector

Abstract

The invention belongs to the technical field of optical precision measurement, and relates to an angle resolution scattering damage detection system adopting an array detector, which comprises a laser light source, a light beam modulation device, a light intensity detection device, a sample table, an anti-shielding device and a control processing device connected with the sample table and the light intensity detection device respectively, the light intensity detection device comprises a plurality of detection units which are arranged in multiple columns on a hemispherical surface which takes the center of the sample table as a circle center and takes a preset distance as a radius; the laser light source and the beam modulation device are located on the outer side of the hemispherical surface, and a Gaussian beam emitted by the laser light source is modulated by the beam modulation device and then emitted to a sample; the anti-shielding device is used for moving away the detection unit located on the incident light path of the Gaussian beam; the control processing device is used for controlling the sample table to overturn to change the incident angle and analyzing the damage condition based on the scattered light intensity data acquired by the detection unit. According to the application, the light intensity information of the sample at multiple scattering angles can be efficiently and synchronously obtained without interference, and the damage condition can be analyzed.

Description

Technical Field

[0001] This application belongs to the field of optical precision measurement technology, and more specifically, relates to an angle-resolved scattering damage detection system employing an array detector. Background Technology

[0002] With the development of technology, precision optical components are increasingly widely used in aerospace, semiconductor manufacturing, biomedical imaging, and other fields. The performance of these components directly affects the accuracy and reliability of related systems. Therefore, damage detection of these precision optical components has become particularly important. Traditional damage detection methods, such as direct observation, contact measurement, and various destructive testing methods, often suffer from low efficiency, insufficient accuracy, or the potential to cause secondary damage to the components.

[0003] Light scattering technology is a non-contact, non-destructive testing method that assesses the surface condition of a material by analyzing the scattering characteristics of light on its surface. However, traditional light scattering detection equipment typically can only detect light intensity within a small angular range at a time, which limits the detection rate and resolution. Furthermore, the structure of typical light scattering detection equipment is prone to light blockage at specific angles, resulting in the loss of some light scattering information. Summary of the Invention

[0004] To address the shortcomings of existing technologies, the purpose of this application is to provide an angle-resolved scattering damage detection system using an array detector, aiming to solve the problems of poor optical detection rate, low resolution of detection results, and loss of light scattering information caused by the inability to scan all angles in existing non-destructive testing technologies.

[0005] To achieve the above objectives, this application provides an angle-resolved scattering damage detection system employing an array detector, comprising a laser source, a beam modulation device, a light intensity detection device, a sample stage, an anti-obstruction device, and a control and processing device connected to the sample stage and the light intensity detection device respectively. The light intensity detection device includes multiple detection units arranged in multiple columns on a hemisphere with the center of the sample stage as the center and a preset spacing as the radius, for collecting scattered light intensity data from the sample. The laser source and the beam modulation device are located outside the hemisphere. The Gaussian beam emitted by the laser source is modulated by the beam modulation device and then incident perpendicularly onto the sample on the sample stage. The anti-obstruction device is used to remove the detection units located in the incident light path of the Gaussian beam. The control and processing device is used to control the sample stage to rotate to change the incident angle of the beam incident on the sample, and also to receive the scattered light intensity data to analyze the damage condition of the sample.

[0006] Furthermore, the beam modulation device includes an attenuator, a polarizer, and a spatial filter arranged coaxially in sequence, wherein: the attenuator is used to attenuate the Gaussian beam; the polarizer is used to polarize the attenuated Gaussian beam; the spatial filter is used to obtain a Gaussian spot using the polarized Gaussian beam, and adjust the size of the Gaussian spot, and also to filter stray light to obtain a fundamental mode Gaussian beam, and optimize the quality of the fundamental mode Gaussian beam.

[0007] Furthermore, the spatial filter includes a focusing lens, a precision pinhole, and a collimating lens arranged coaxially in sequence, wherein: the focusing lens is used to convert the polarized Gaussian beam into a Gaussian spot located at the center of the optical axis and stray light located at the edge, respectively; the precision pinhole is used to filter stray light to obtain the fundamental mode Gaussian beam; and the collimating lens is used to modulate the fundamental mode Gaussian beam to collimate it and make its energy uniformly distributed.

[0008] Furthermore, the diameter of the Gaussian spot is:

[0009] Where D is the diameter of the Gaussian spot, F is the focal length of the collimating lens, f is the focal length of the focusing lens, and d is the diameter of the Gaussian beam.

[0010] Furthermore, the anti-blocking device includes a beam splitter, through which a modulated beam modulated by a beam modulation device is directed onto the sample, and scattered light emitted from the sample is reflected by the beam splitter to the detection unit that has been moved away by the anti-blocking device.

[0011] Furthermore, the detection range of the detection unit includes a low-light mode and a high-light mode, and the minimum light intensity of the high-light mode is greater than the maximum light intensity of the low-light mode. When the detection unit initially collects light intensity data using the low-light mode, and the initial collected light intensity data is greater than or equal to the maximum light intensity of the low-light mode, the control processing device can control the detection unit to switch to the high-light mode for a second collection, and determine whether the second collected light intensity data is less than or equal to the minimum light intensity of the high-light mode: if yes, the initial collected light intensity data is used as the final light intensity data; if no, the second collected light intensity data is used as the final light intensity data.

[0012] Furthermore, the control processing device switches between low-light and high-light modes by adjusting the gain of the detection unit. The gain adjustment formula is as follows:

[0013] Where μ is the gain of the detector unit, Q is the charge in the pulse, and e is the electron constant. V BIAS This is the bias voltage. VBR This is the power supply voltage. C J For capacitors, ΔV This is overvoltage.

[0014] Furthermore, the detection unit uses silicon photomultiplier tubes, and the silicon photomultiplier tubes are evenly divided into at least two groups, each group including at least two silicon photomultiplier tubes, and the anti-blocking device can move any group of silicon photomultiplier tubes.

[0015] Furthermore, the sample stage rotates around its center within a range of 0° to 180°.

[0016] Overall, the technical solutions conceived in this application have the following beneficial effects compared with the prior art: (1) This application achieves efficient, synchronous, and interference-free acquisition of light intensity information of the sample at multiple scattering angles under a single irradiation through a unique hemispherical array detector layout and anti-blocking design. Combined with precisely controllable incident angle changes, it can comprehensively and systematically acquire the three-dimensional spatial distribution of the sample's scattered light, realize high-speed detection of light intensity information after light scattering, and accurately acquire the sample's damage status and obtain high-resolution detection results through this light intensity information. This application realizes automated detection process and efficient, accurate, and intelligent analysis of sample damage through integrated control processing.

[0017] (2) The scheme for collecting light intensity information by switching between weak light mode and strong light mode designed in this application achieves high-precision measurement in a wide dynamic range through adaptive mode switching and data fusion. At the same time, it balances sensitivity and anti-saturation requirements. Because the type of damage (such as point defects or linear scratches) and size often lead to uneven light intensity distribution, this application ensures the accuracy of data in the full range from weak light to strong light, thereby improving the reliability of damage judgment and reducing measurement uncertainty. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the angular-resolved scattering damage detection system using an array detector provided in an embodiment of this application; Figure 2 This is a schematic diagram of the light intensity detection device provided in the embodiments of this application; Figure 3 This is a schematic diagram of the beam modulation device structure provided in the embodiments of this application; Figure 4 This is a schematic diagram of the anti-blocking device structure provided in the embodiments of this application; Figure 5 This is a schematic diagram of the adjustment process of the detection range of the detection unit provided in the embodiments of this application; Figure 6This is a simplified equivalent circuit diagram of silicon photomultiplier tube gain adjustment provided in the embodiments of this application; Figure 7 This is a schematic diagram of SiPM acquisition signal transmission provided in an embodiment of this application.

[0019] In all the accompanying drawings, the same reference numerals are used to denote the same elements or structures, wherein: 101-Laser source, 102-Beam modulation device, 103-Sample stage, 104-Light intensity detection device, 105-Anti-blocking device, 106-Control and processing device; 201-Attenuator, 202-Polarizer, 203-Focusing lens, 204-Precision pinhole, 205-Collimating lens; 301-Beam splitter, 302-Detection unit group, 303-Sample. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0021] In this article, the term "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. The symbol " / " in this article indicates that the related objects are in an "or" relationship; for example, A / B means A or B.

[0022] The terms "first" and "second," etc., used in the specification and claims herein are used to distinguish different objects, not to describe a specific order of objects. For example, "first response message" and "second response message," etc., are used to distinguish different response messages, not to describe a specific order of response messages.

[0023] In the embodiments of this application, the terms "exemplary" or "for example" are used to indicate that something is an example, illustration, or description. Any embodiment or design that is described as "exemplary" or "for example" in the embodiments of this application should not be construed as being more preferred or advantageous than other embodiments or design. Specifically, the use of the terms "exemplary" or "for example" is intended to present the relevant concepts in a specific manner.

[0024] In the description of the embodiments of this application, unless otherwise stated, "multiple" means two or more, for example, multiple processing units means two or more processing units, multiple elements means two or more elements, etc.

[0025] The embodiments of this application are described below with reference to the accompanying drawings.

[0026] One embodiment of this application provides an angle-resolved scattering damage detection system employing an array detector, such as... Figure 1 As shown, the angle-resolved scattering damage detection system includes a laser source 101, a beam modulation device 102, a light intensity detection device 104, a sample stage 103, an anti-obstruction device 105, and a control and processing device 106 connected to the sample stage 103 and the light intensity detection device 104 respectively.

[0027] like Figure 2 As shown, the aforementioned light intensity detection device 104 includes multiple detection units, which are arranged in multiple columns on a hemisphere with the sample stage 103 as the center and a preset spacing as the radius. The hemisphere can be designed as a transparent hemispherical support shell, or it can be a virtual hemisphere formed by multiple arc-shaped support strips. Each column of detection units is evenly arranged on the corresponding arc-shaped support strip. The detection units are used to collect the scattered light intensity data of the sample.

[0028] The aforementioned laser source 101 and beam modulation device 102 are disposed on the outer side of the hemisphere. The laser source 101 can emit Gaussian beams from different positions on the hemisphere. The Gaussian beam is a single-wavelength Gaussian beam with a wavelength of 532nm. After being modulated by the beam modulation device 102, the Gaussian beam is perpendicular to the hemisphere and is projected onto the sample on the sample stage 103. The anti-blocking device is used to remove the detection unit located on the incident light path of the Gaussian beam to prevent the incident Gaussian beam from being blocked. The control and processing device 106 is used to control the sample stage 103 to rotate around its center in the range of 0° to 180° to change the incident angle of the beam into the sample, realize the acquisition of Gaussian beam intensity data from different positions and angles, and also receive scattered light intensity data, and use all light intensity data to analyze the damage of the sample.

[0029] In this embodiment, the beam modulation device 102 is as follows: Figure 3 As shown, the system includes an attenuator 201, a polarizer 202, and a spatial filter arranged coaxially in sequence. The attenuator 201 attenuates the Gaussian beam to prevent damage to optical components and a reduction in the dynamic range of the measurement results due to excessive laser intensity. In this embodiment, either a passive or active attenuator is used. If a passive attenuator is selected, either a fixed or adjustable attenuator can be chosen. The polarizer 202 converts the attenuated Gaussian beam into polarized light. In this embodiment, a linear polarizer is used, and it is designed to be detachable and replaceable. It is mainly used to convert the Gaussian beam into polarized light for measurement. The spatial filter is used to obtain a Gaussian spot from the polarized Gaussian beam and adjust the size of the Gaussian spot. It also filters stray light to obtain the fundamental Gaussian beam and optimizes its quality.

[0030] In this embodiment, the aforementioned spatial filter comprises a focusing lens 203, a precision pinhole 204, and a collimating lens 205 arranged coaxially in sequence. The focusing lens 203 focuses polarized light into a Gaussian spot; in this embodiment, an aspherical lens is used to eliminate spherical aberration and improve the quality of the edge spot. The precision pinhole 204 filters stray light to obtain a fundamental Gaussian beam; in this embodiment, a circular precision pinhole is used to match the Gaussian spot. The collimating lens 205 modulates the fundamental Gaussian beam; its material is the same as that of the focusing lens 203 to maintain dispersion consistency; in this embodiment, a plano-convex lens is used, but in other preferred embodiments, an aspherical lens may also be used, to collimate the fundamental Gaussian beam and ensure uniform energy distribution.

[0031] In this embodiment, the diameter of the aforementioned Gaussian spot is determined by the following formula:

[0032] Where D is the diameter of the Gaussian spot, F is the focal length of the collimating lens, f is the focal length of the focusing lens, and d is the diameter of the Gaussian beam.

[0033] Different surface and subsurface damage morphologies exhibit varying scattered light intensity distributions under laser irradiation. Array-type light intensity detection units can efficiently and accurately collect scattered signals by moving their positions. Scattered signals display different characteristics at different incident angles, and different damage morphologies are better characterized at different incident angles. Measurements at multiple incident angles enrich light scattering information and increase measurement accuracy. For components with relatively rough surfaces, the scattered signal generated by unpolarized laser irradiation includes signal characterizations of both the rough surface and the damage. In contrast, the polarization state of polarized light is less affected by the rough surface but more significantly affected by the damage. Therefore, polarization measurement allows for more targeted measurement of component damage.

[0034] In this embodiment, the detection unit uses silicon photomultiplier tubes (i.e., SiPMs), and the silicon photomultiplier tubes are evenly divided into multiple groups. In this embodiment, the SiPMs are divided into n groups, and each group includes 5 SiPMs. In other embodiments, each group may contain more than 5 or less than 5 SiPMs. The anti-blocking device can move any group of silicon photomultiplier tubes to any position within the hemisphere.

[0035] In this embodiment, the aforementioned anti-obstruction device can adopt an existing rotary swing arm mechanical structure. The length of its rotating arm needs to exceed the optical path radius by a certain safety margin, and it is powered by a micro servo motor. The end of the rotating arm has a detection unit clamp that can hold the detection unit to be transferred and move the detection unit away from the Gaussian beam propagation optical path according to the instructions of the control processing device 106. In other embodiments, an existing linear slide translation mechanical structure can also be used, mainly including precision linear ball guide rails, stepper motors, and ball screws, and integrated with the control processing device 106.

[0036] In this embodiment, the working principle diagram of the anti-blocking device is as follows: Figure 4 As shown, the anti-blocking device also includes a beam splitter 301. The beam splitter 301 is always located on the incident path of the Gaussian beam. The modulated beam obtained after the incident Gaussian beam is modulated by the beam modulation device 102 enters the beam splitter 301 and is then directed onto the sample 303 carried on the sample stage 301. The scattered light emitted from the sample is then reflected by the beam splitter 301 to a group of detection units 302 that have been moved to the side by the anti-blocking device, thus preventing the loss of this part of the light intensity data. In this embodiment, the beam splitter 301 uses a beam splitter with optical parameters of 20% transmission T and 80% reflection R, which greatly avoids the loss of light scattering signals.

[0037] In this embodiment, the detection range of the detection unit includes a low-light mode and a high-light mode, with the minimum light intensity of the high-light mode being greater than the maximum light intensity of the low-light mode. For example... Figure 5 The diagram shows the adjustment process of the detection range of the detection unit. The specific process is as follows: The detection unit first collects light intensity data for the first time using the low light setting. After the data is collected, the data collected for the first time is analyzed and judged. If the value collected for the first time reaches the upper limit of the measurement range of the low light setting, that is, the light intensity data collected for the first time is greater than or equal to the maximum light intensity of the low light setting, the control processing device 106 controls the detection unit to reduce the bias voltage so as to switch to the high light setting and perform a second collection measurement. After the second collection is completed, it is judged whether the light intensity data collected for the second time is less than or equal to the lower limit of the high light setting. If so, the light intensity data collected for the first time is used as the final light intensity data for post-processing. If not, the light intensity data collected for the second time is saved as the final light intensity data for post-processing, that is, the light intensity data collected for the second time is directly used as the basis for subsequent damage analysis.

[0038] The principle behind adjusting the low-light and high-light settings is to change the measurement range by adjusting the SiPM gain, simplifying the equivalent circuit diagram as follows: Figure 6 As shown, when there is no light or dark counting, switch S is open, and junction capacitance C... J The voltage on is V BIAS The microcell is in Geiger mode. When charge carriers trigger discharge, switch S closes, and capacitor C... JThrough R S Discharge begins at resistor R Q A voltage drop is generated, thus inducing current between the SiPM terminals. The current pulse occurs at t i Starting from time i, it rapidly increases to the maximum value i. max = (V BIAS -V BR ) / (R Q +R S It takes approximately 1 ns. In t max At that time, the voltage on the APD (Avalanche Photodiode, APD) drops to approximately V. BR The capacitance is insufficient to sustain the discharge, resulting in quenching. Capacitor C J Recharging begins, resistor R Q As the voltage decreases, the current between the SiPM terminals changes with a time constant τ=R. Q C J The index decreases. For a typical R... Q and C J The value, τ, is approximately 10 ns.

[0039] A lower gain corresponds to a strong light detection level, while a higher gain corresponds to a weak light detection level, offering higher sensitivity and facilitating the detection of small signal fluctuations in weak light areas. Specifically, the control processing device 106 switches between the weak light and strong light levels by adjusting the gain of the detection unit. The gain adjustment formula is as follows:

[0040] Where μ is the gain of the detector unit, Q is the charge in the pulse, and e is the electron constant. V BIAS This is the bias voltage. V BR This is the power supply voltage. C J For capacitors, ΔV This is overvoltage.

[0041] From the above formula, it can be seen that the gain μ Overvoltage ΔV The decision is made, and overvoltage adjustment can be achieved by changing the bias voltage. Achieve this by reducing It allows for adjustment from low light detection mode to high light detection mode.

[0042] In this embodiment, as Figure 7The diagram shows the signal transmission of each SiPM group in the light intensity detection device 104. The SiPMs are divided into n groups, each containing m SiPMs. The light intensity data is acquired by summing the pulse signals of each group of SiPMs (signal gn, where gn is group n), and then using the sum of the pulse signals of the entire group (signal gn) to calculate the pulse signal signal no.m of each SiPM in each group. The purpose of grouped signal transmission is to reduce the amount of data transmitted and increase the data transmission speed. The number of light intensity data transmitted using this method is m+n, far less than the m*n data obtained by traditional measurement methods. This data can be viewed as solving a system of equations for an m*n matrix. The control and processing device 106 uses a conventional computer. After receiving the aforementioned light intensity data signals, the computer uses an inverse algorithm based on Gaussian elimination to reconstruct the light scattering signal at each angle.

[0043] The main functions of the control processing program on the computer include setting measurement parameters, processing light intensity data, and visualization. When using the angle-resolved scattering damage detection system provided in this embodiment, the measurement incident angle and measurement accuracy can be input according to the measurement requirements. The sample stage is then rotated to the specified angle, and the anti-obstruction system moves the SiPM group located in the incident light direction. After the measurement is completed, the control processing program processes the multiple sets of light intensity data acquired using methods commonly used in the field. For example, noise and dead pixel removal are performed on the light intensity data, and conventional algorithms such as inverse algorithms are used to calculate the light intensity value at each incident angle. The relevant processed data is then output and these light intensity values ​​are visualized in an image format, thereby determining the damage type and size of the component under test.

[0044] It should be understood that expressions such as “comprising” and “may include” used in this application indicate the existence of the disclosed functions, operations, or constituent elements, and do not limit one or more additional functions, operations, and constituent elements. In this application, terms such as “comprising” and / or “having” are to be interpreted as indicating a particular characteristic, number, operation, constituent element, component, or combination thereof, but not to exclude the existence or possibility of adding one or more other characteristics, numbers, operations, constituent elements, components, or combinations thereof.

[0045] Furthermore, in this application, the expression "and / or" includes any and all combinations of the associated listed words. For example, the expression "A and / or B" may include A, may include B, or may include both A and B.

[0046] In the description of the embodiments of this application, it should be noted that, unless otherwise explicitly specified and limited, the term "connection" should be interpreted broadly. For example, "connection" can be a detachable connection or a non-detachable connection; it can be a direct connection or an indirect connection through an intermediate medium. "Fixed connection" refers to a connection where the relative positional relationship remains unchanged after connection. "Rotary connection" refers to a connection where the components can rotate relative to each other after connection. "Sliding connection" refers to a connection where the components can slide relative to each other after connection. The directional terms mentioned in the embodiments of this application, such as "top," "bottom," "inner," "outer," "left," and "right," are only for reference to the directions in the accompanying drawings. Therefore, the directional terms used are for better and clearer explanation and understanding of the embodiments of this application, and are not intended to indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this application.

[0047] Furthermore, the mathematical concepts mentioned in the embodiments of this application, such as symmetry, equality, parallelism, and perpendicularity, are limitations specific to the current technological level, rather than absolute and strict mathematical definitions. Slight deviations are permissible; approximations of symmetry, equality, parallelism, and perpendicularity are all acceptable. For example, "A and B are parallel" means that A and B are parallel or approximately parallel, and the angle between A and B can be between 0 and 10 degrees. "A and B are perpendicular" means that A and B are perpendicular or approximately perpendicular, and the angle between A and B can be between 80 and 100 degrees.

[0048] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. An angle-resolved scattering damage detection system employing an array detector, characterized in that, The system includes a laser source (101), a beam modulation device (102), a light intensity detection device (104), a sample stage (103), an anti-blocking device (105), and a control processing device (106) connected to the sample stage (103) and the light intensity detection device (104), respectively. The light intensity detection device (104) comprises multiple detection units arranged in multiple columns on a hemisphere with the center of the sample stage (103) as the center and a preset spacing as the radius, used to collect scattered light intensity data from the sample. The light source (101) and the beam modulation device (102) are located on the outer side of the hemisphere. The Gaussian beam emitted by the laser source (101) is modulated by the beam modulation device (102) and then incident on the sample on the sample stage (103). The anti-blocking device (105) is used to remove the detection unit located on the incident light path of the Gaussian beam. The control and processing device (106) is used to control the sample stage (103) to flip to change the incident angle of the beam incident on the sample, and is also used to receive the scattered light intensity data to analyze the damage of the sample.

2. The angle-resolved scattering damage detection system as described in claim 1, characterized in that, The beam modulation device (102) includes an attenuator (201), a polarizer (202), and a spatial filter arranged coaxially in sequence, wherein: the attenuator (201) is used to attenuate the Gaussian beam; the polarizer (202) is used to polarize the attenuated Gaussian beam; the spatial filter is used to obtain a Gaussian spot using the polarized Gaussian beam, and adjust the size of the Gaussian spot, and is also used to filter stray light to obtain a fundamental Gaussian beam, and optimize the quality of the fundamental Gaussian beam.

3. The angle-resolved scattering damage detection system as described in claim 2, characterized in that, The spatial filter includes a focusing lens (203), a precision pinhole (204), and a collimating lens (205) arranged coaxially in sequence, wherein: the focusing lens (203) is used to convert the polarized Gaussian beam into a Gaussian spot located at the center of the optical axis and stray light located at the edge, respectively; the precision pinhole (204) is used to filter stray light to obtain the fundamental mode Gaussian beam; and the collimating lens (205) is used to modulate the fundamental mode Gaussian beam to make it collimated and have uniform energy distribution.

4. The angle-resolved scattering damage detection system as described in claim 3, characterized in that, The diameter of the Gaussian spot is: Where D is the diameter of the Gaussian spot, F is the focal length of the collimating lens, f is the focal length of the focusing lens, and d is the diameter of the Gaussian beam.

5. The angle-resolved scattering damage detection system as described in claim 1, characterized in that, The anti-blocking device (105) includes a beam splitter (301). The modulated beam, modulated by the beam modulation device (102), is directed onto the sample via the beam splitter (301), and the scattered light emitted from the sample is reflected by the beam splitter (301) into the detection unit that has been moved away by the anti-blocking device (105).

6. The angle-resolved scattering damage detection system as described in claim 1, characterized in that, The detection range of the detection unit includes a low light level and a high light level, and the minimum light intensity of the high light level is greater than the maximum light intensity of the low light level. The detection unit initially collects light intensity data using the low light level, and when the initial collected light intensity data is greater than or equal to the maximum light intensity of the low light level, the control processing device (106) can control the detection unit to switch to the high light level for secondary collection, and determine whether the secondary collected light intensity data is less than or equal to the minimum light intensity of the high light level: if yes, the initial collected light intensity data is used as the final light intensity data; if no, the secondary collected light intensity data is used as the final light intensity data.

7. The angle-resolved scattering damage detection system as described in claim 6, characterized in that, The control processing device (106) switches between low light and high light levels by adjusting the gain of the detection unit. The adjustment formula for the gain is: Where μ is the gain of the detector unit, Q is the charge in the pulse, and e is the electron constant. V BIAS This is the bias voltage. V BR This is the power supply voltage. C J For capacitors, ΔV This is overvoltage.

8. The angle-resolved scattering damage detection system as described in claim 1, characterized in that, The detection unit uses silicon photomultiplier tubes, and the silicon photomultiplier tubes are evenly divided into at least two groups, each group including at least two silicon photomultiplier tubes. The anti-blocking device (105) can move any group of silicon photomultiplier tubes.

9. The angle-resolved scattering damage detection system as described in claim 1, characterized in that, The sample stage (103) rotates around its center within the range of 0° to 180°.

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