Chamber apparatus, semiconductor processing system and material layer deposition method

Abstract

A chamber apparatus includes a chamber body, a substrate support, and an upper array of heater elements. The chamber body has an injection end and a longitudinally opposite discharge end, a substrate support disposed within the chamber body and supported therein for rotation about an axis of rotation, and an array of upper heater elements supported above the chamber body and including a laterally inner first upper linear lamp and a laterally inner second upper linear lamp. The laterally inner first upper linear lamp is separated from the axis of rotation by a first lateral spacing distance, the laterally inner second upper linear lamp is separated from the axis of rotation by a second lateral spacing distance, and one of the first lateral spacing distance and the second lateral spacing distance is greater than the other of the first lateral spacing distance and the second lateral spacing distance. Semiconductor processing systems and material layer deposition methods are also described.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority and benefit to U.S. Provisional Patent Application Nos. 63 / 665,070 and 63 / 665,062, filed June 27, 2024, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] This disclosure generally relates to depositing a material layer onto a substrate, and more specifically to controlling the substrate temperature during the deposition of the material layer onto the substrate. Background Technology

[0004] Material layers are typically deposited onto a substrate, for example, during the fabrication of semiconductor devices. Deposition can be achieved by loading the substrate into a reactor, heating the substrate, and, under selected conditions, contacting the heated substrate with a material layer precursor to deposit the material layer onto the substrate. Typically, the heating of the substrate is controlled during deposition to form a material layer with one or more desired properties, such as desired thickness and / or compositional uniformity on the substrate. As semiconductor devices become increasingly smaller, additional and / or improved temperature control techniques and reactor temperature control features are required to ensure that the material layer deposited onto the substrate and used to fabricate the semiconductor device has properties suitable for the manufactured semiconductor device.

[0005] Such systems and methods are generally considered suitable for their intended purpose. However, there is still a need in the art for improved chamber devices, semiconductor processing systems including chamber devices, and related material layer deposition methods. This disclosure provides a solution to this need. Summary of the Invention

[0006] A chamber device is provided. The chamber device includes a chamber body, a substrate support, and an array of upper heater elements. The chamber body has an injection end and a longitudinally opposed discharge end. The substrate support is disposed within and supported therein to rotate about a rotation axis. The array of upper heater elements is supported above the chamber body and includes a first laterally inward upper linear luminaire and a second laterally inward upper linear luminaire. The first laterally inward upper linear luminaire is separated from the rotation axis by a first lateral spacing distance, and the second laterally inward upper linear luminaire is separated from the rotation axis by a second lateral spacing distance. One of the first lateral spacing distance and the second lateral spacing distance is greater than the other of the first lateral spacing distance and the second lateral spacing distance.

[0007] In addition to one or more of the features described above, or as an alternative, another example of a chamber device may include a chamber body having one or more external ribs that extend around the exterior of the chamber body and longitudinally between the injection end and the discharge end of the chamber body.

[0008] In addition to one or more of the features described above, or as an alternative, other examples of room fixtures may include a first upper linear luminaire in the transverse direction and a second upper linear luminaire in the transverse direction substantially orthogonal to one or more external ribs.

[0009] In addition to one or more of the features described above, or as an alternative, another example of a chamber arrangement may include a lower heater element array comprising two or more filament-type lower linear luminaires supported beneath the chamber body. The two or more filament-type lower linear luminaires are substantially parallel to one or more external ribs.

[0010] In addition to one or more of the features described above, or alternatively, another example of a chamber device may include an upper heater element array laterally offset from the axis of rotation. Alternatively (or additionally), the upper heater element array may be longitudinally offset from the axis of rotation.

[0011] In addition to one or more of the features described above, or as an alternative, another example of a chamber arrangement may include an upper reflector supported above the chamber body. The upper heater element array may be fixed relative to the chamber body, wherein the upper reflector is supported to move relative to the chamber body.

[0012] In addition to one or more of the features described above, or as an alternative, another example of a chamber device may include a chamber body having one or more external ribs that extend around the exterior of the chamber body and longitudinally between the injection end and the discharge end of the chamber body.

[0013] In addition to one or more of the features described above, or as an alternative, other examples of room fixtures may include a first upper linear luminaire and a second upper linear luminaire in the transverse direction substantially orthogonal to one or more external ribs.

[0014] In addition to one or more of the features described above, or as an alternative, another example of a chamber arrangement may include a lower heater element array comprising two or more filament-type lower linear luminaires supported beneath the chamber body. The two or more filament-type lower linear luminaires are substantially parallel to one or more external ribs.

[0015] In addition to one or more of the features described above, or as an alternative, another example of the chamber arrangement may include a first substrate pyrometer supported above the chamber body and arranged along the optical axis of the first substrate pyrometer. The optical axis of the first substrate pyrometer may intersect with a substrate support. The optical axis of the first substrate pyrometer may extend between a first upper linear luminaire and a second upper linear luminaire in a laterally transverse direction.

[0016] In addition to one or more of the features described above, or as an alternative, other examples of the chamber arrangement may include: a first longitudinally lower linear luminaire supported beneath the chamber body; and a second longitudinally lower linear luminaire. The optical axis of the first substrate pyrometer may extend between the first longitudinally lower linear luminaire and the second longitudinally lower linear luminaire.

[0017] In addition to one or more of the features described above, or as an alternative, another example of the chamber arrangement may include a second substrate pyrometer supported above the chamber body and arranged along the optical axis of the second substrate pyrometer. The optical axis of the second substrate pyrometer may intersect with the substrate support. The optical axis of the second substrate pyrometer may extend between a first upper linear luminaire and a second upper linear luminaire in a laterally transverse direction.

[0018] In addition to one or more of the features described above, or as an alternative, another example of the chamber apparatus may include a longitudinally outer first lower linear luminaire supported below the chamber body and a longitudinally intermediate second lower linear luminaire supported below the chamber body. The longitudinally intermediate second lower linear luminaire may separate the longitudinally outer first lower linear luminaire from the axis of rotation. The optical axis of the second substrate pyrometer may extend between the longitudinally outer first lower linear luminaire and the longitudinally intermediate second lower linear luminaire.

[0019] In addition to one or more of the features described above, or as an alternative, another example of the chamber arrangement may include a third substrate pyrometer supported above the chamber body and arranged along the optical axis of the third substrate pyrometer. A first lower linear luminaire in the longitudinal direction may be supported below the chamber body. A second lower linear luminaire in the longitudinal direction may be supported below the chamber body and separated from the first lower linear luminaire in the longitudinal direction by a rotation axis. The optical axis of the third substrate pyrometer may separate the first lower linear luminaire in the longitudinal direction from the second lower linear luminaire in the longitudinal direction. The optical axis of the third substrate pyrometer may be separated from the first upper linear luminaire in the transverse direction from the second upper linear luminaire in the transverse direction.

[0020] In addition to one or more of the features described above, or as an alternative, other examples of the chamber device may include an upper wall and upper rib portion formed from a single ceramic workpiece using a subtractive manufacturing technique. Alternatively (or additionally), the chamber body may have a lower wall and lower rib portion formed from a single ceramic workpiece using a subtractive manufacturing technique.

[0021] In addition to one or more of the features described above, or as an alternative, other examples of the chamber arrangement may include an upper heater element array comprising two or more filament-type upper linear luminaires. The chamber arrangement may also include a lower heater element array supported beneath the chamber body. The lower heater element array may include two or more filament-type lower linear luminaires. The two or more filament-type lower linear luminaires in the lower heater element array may be larger than the two or more filament-type upper linear luminaires in the upper heater element array.

[0022] In addition to one or more of the features described above, or as an alternative, other examples of the chamber device may include an upper reflector that is perfectly parabolic, in which the entire reflective surface opposite the chamber body is occupied by a plurality of arcuate recesses. The lower reflector may be perfectly parabolic, with the reflective surface of the lower reflector being essentially occupied by arcuate recesses.

[0023] In addition to one or more of the features described above, or as an alternative, other examples of the chamber device may include a lower chamber height defined by the chamber body between the lower surface of the substrate support and the inner surface of the wall of the chamber body, an upper chamber height between the upper surfaces of the substrate support, and the lower chamber height being less than the upper chamber height of the upper chamber.

[0024] A semiconductor processing system is provided. The semiconductor processing system includes a chamber device and a controller as described above. The chamber device further includes: a first substrate pyrometer supported above the chamber body and arranged along a first substrate pyrometer optical axis intersecting with a substrate support; a second substrate pyrometer supported above the chamber body and arranged along a second substrate pyrometer optical axis intersecting with a substrate support; and a third substrate pyrometer supported above the chamber body and arranged along a third substrate pyrometer optical axis intersecting with a substrate support. The controller is configured to communicate with the first substrate pyrometer, the second substrate pyrometer, and the third substrate pyrometer. The controller further responds to instructions recorded in a memory to: operatively connect the first substrate pyrometer to three (3) laterally adjacent upper linear lamps of an upper heater element array, the upper heater element array including a laterally inner first upper linear lamp and a laterally inner second upper linear lamp; operatively connect the second substrate pyrometer to a laterally outer first upper linear lamp and a laterally outer second upper linear lamp of the upper heater element array; and operatively connect the third substrate pyrometer to a laterally intermediate second upper linear lamp of the upper heater element array. The instructions can further instruct the controller to deposit a material layer onto a substrate within the chamber body, while simultaneously controlling the temperature of the substrate using electromagnetic radiation emitted by the material layer and received at the first substrate pyrometer, the second substrate pyrometer, and the third substrate pyrometer during the deposition of the material layer onto the substrate.

[0025] In addition to one or more of the features described above, or as an alternative, another example of a semiconductor processing system may include instructions to further cause the controller to adjust the heating of the substrate using eleven (11) non-overlapping locations that are above the substrate and laterally spaced from each other between the first and second sidewalls of the chamber body.

[0026] In addition to one or more of the features described above, or as an alternative, another example of a semiconductor processing system may include a chamber device further comprising a lower heater element array including two or more filament-type lower linear lamps substantially orthogonal to a plurality of filament-type upper linear lamps of the upper heater element array. Instructions recorded in memory may further cause the controller to: operatively connect a first substrate pyrometer to a first lower linear lamp and a second lower linear lamp in the longitudinal direction of the lower heater element array; operatively connect a second substrate pyrometer to a first lower linear lamp and a second lower linear lamp in the longitudinal direction of the lower heater element array; and operatively connect a third substrate pyrometer to a first lower linear lamp and a second lower linear lamp in the longitudinal direction of the intermediate direction.

[0027] In addition to one or more of the features described above, or as an alternative, another example of a semiconductor processing system may include instructions to cause a controller to adjust the heating of the substrate using twelve (12) locations that are located below the substrate and longitudinally spaced apart from each other between the injection and discharge ends of the chamber body.

[0028] A method for depositing a material layer is provided. The method includes: placing a substrate on a substrate support at a chamber device as described above; heating the substrate using an array of upper heater elements; contacting the substrate with a material layer precursor; and depositing a material layer onto the substrate using the material layer precursor. The substrate is heated using eleven (11) filament-type upper linear heating elements offset from the axis of rotation, with the lateral offset not equal to that of the axis of rotation; and the thickness variation of the trans-substrate material layer within the material layer deposited on the substrate is less than the thickness variation of a material layer deposited using a chamber device having two or more filament-type upper heater elements with equivalent lateral offsets.

[0029] This summary is provided to present the chosen concepts in a simplified form. These concepts are further described in detail in the following exemplary embodiments of this disclosure. This summary is not intended to identify key or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter. Attached Figure Description

[0030] These and other features, aspects, and advantages of the invention disclosed herein are described below with reference to the accompanying drawings of certain embodiments, which are intended to illustrate rather than limit the invention.

[0031] Figure 1 This is a schematic diagram of a semiconductor processing system including a chamber device according to the present disclosure, showing the chamber device connecting a processing fluid source to an exhaust source and a controller;

[0032] Figure 2 Examples of this disclosure include a fluid source and a controller. Figure 1A schematic diagram of a semiconductor processing system, schematically showing a material layer precursor source for processing fluid sources;

[0033] Figure 3 It is based on the example of this disclosure. Figure 1 A cross-sectional side view of the chamber installation, schematically showing the array of reflectors and luminaires supported above and below the chamber body of the chamber installation;

[0034] Figure 4 and Figure 5 It is based on the example of this disclosure. Figure 1 An end view and plan view of a portion of the chamber assembly, schematically showing an array of upper heater elements and an upper reflector supported above the chamber body of the chamber assembly;

[0035] Figure 6 and Figure 7 It is based on the example of this disclosure. Figure 1 A side view and plan view of a portion of the chamber assembly, schematically showing the lower heater element array and lower reflector supported below the chamber body of the chamber assembly;

[0036] Figures 8 to 10 It is based on the example of this disclosure. Figure 1 A plan view of the upper reflector of the chamber device, schematically showing the positioning of the upper reflector and the upper linear luminaires suspended from the upper reflector, such that the upper linear luminaires are asymmetrically distributed laterally with respect to the axis of rotation;

[0037] Figure 11 It is based on the example of this disclosure. Figure 1 A partial view of a portion of the chamber apparatus, schematically showing a controller that operatively connects a pyrometer to the upper and lower linear heater element arrays of the chamber apparatus;

[0038] Figure 12 This is based on the example of the use of this disclosure. Figure 1 A block diagram of a material layer deposition method for a chamber apparatus is shown, illustrating the operation of the method according to illustrative and non-limiting examples;

[0039] Figures 13 to 15 It is based on the example of this disclosure. Figure 14 A block diagram of the operation of the method is shown, illustrating the substrate temperature measurement obtained by a pyrometer used to control the temperature of the substrate placed within the chamber device;

[0040] Figure 16 Is Figure 1 A set of graphs showing the thickness variation of trans-substrate material layers within silicon and silicon-germanium material layers deposited in chamber devices and chamber devices with different arrangements is presented, comparatively illustrating the effect of using different arrangements of chamber devices. Figure 1Reduced material layer variation in the material layer deposited in the chamber device; and

[0041] Figure 17 It is a set of graphs showing the changes in material layer thickness in response to localized temperature changes in the central, intermediate, and peripheral regions of the substrate, illustrating the correspondence between the commanded temperature change and the actual temperature change through changes in material layer thickness.

[0042] It should be understood that the elements in the accompanying drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the relative dimensions of some elements in the drawings may be exaggerated relative to other elements to help improve the understanding of the embodiments illustrated in this disclosure. Detailed Implementation

[0043] Reference will now be made to the accompanying drawings, wherein like reference numerals identify similar structural features or aspects of the subject matter disclosed herein. Partial views of examples of semiconductor processing systems, including chamber arrangements according to this disclosure, are provided for purposes of explanation and illustration rather than limitation. Figure 1 As shown in the figure, and generally indicated by reference numeral 100. Figures 2 to 17 Other examples or aspects thereof of chamber devices, semiconductor processing systems including chamber devices, and related material layer deposition methods according to this disclosure are provided, as will be described. The systems and methods of this disclosure may control the substrate temperature during the deposition of a material layer onto a substrate, for example during the deposition of a silicon-containing material layer onto a substrate in a chamber device having a single-wafer crossflow architecture, but this disclosure is generally not limited to any particular type of material layer or chamber architecture.

[0044] refer to Figure 1The image illustrates a semiconductor processing system 100. The semiconductor processing system 100 typically includes a process fluid source 102, a chamber device 104, an exhaust source 106, and a controller 108. The process fluid source 102 is connected to the chamber device 104 via a process fluid supply conduit 110, includes process fluid 10, and is configured to deliver a process fluid stream including process fluid 10 to the chamber device 104. The chamber device 104 is connected to the exhaust source 106 via an exhaust conduit 112 and is configured to contact a substrate 2 supported within the chamber device 104 under selected environmental conditions (e.g., temperature and pressure) to deposit a material layer 4 onto the substrate 2. The exhaust source 106 is in fluid communication with an external environment 12 outside the semiconductor processing system 100 and is configured to deliver an exhaust gas stream including residual process fluid and / or reactants 14 to the external environment 12. In this respect, it is contemplated that the exhaust source 106 includes one or more of a vacuum pump and a damping device (e.g., a combustion chamber and / or a scrubber). The controller 108 is operatively coupled to one or more of the processing fluid source 102, the chamber device 104, and / or the exhaust source 106 to control the deposition of the material layer 4 on the substrate 2. In this regard, it is conceivable that the controller 108 may be communicatively coupled to one or more elements of the chamber device 104 via a wired or wireless link 114.

[0045] As used herein, the term "substrate" can refer to any one or more underlying materials, including any one or more underlying materials that can be modified or on which devices, circuits, or films can be formed. Substrates can be continuous or discontinuous; rigid or flexible; solid or porous; and combinations thereof. Substrates can be in any form, such as (but not limited to) powder, plate, or workpiece. Plate-type substrates can include wafers of various shapes and sizes, such as 300 mm wafers. Substrates can be formed from semiconductor materials, including, for example, silicon (Si), silicon-germanium (SiGe), silicon oxide (SiO2), gallium arsenide (GaAs), gallium nitride (GaN), and silicon carbide (SiC). Substrates can include patterned or unpatterned materials, such as so-called blanket substrates. As an example, powder-type substrates can have applications for pharmaceutical manufacturing. Porous substrates can include one or more polymers. Examples of workpieces can include medical devices (e.g., stents and syringes), jewelry, tooling devices, components for battery manufacturing (e.g., anodes, cathodes, or separators), or components for photovoltaic cells, etc. Continuous substrates can extend beyond the boundaries of the processing chamber where the deposition process takes place. In some processes, a continuous substrate can move through a processing chamber, allowing the process to continue until the end of the substrate is reached. A continuous substrate can be supplied from a continuous substrate feeding system to allow the continuous substrate to be manufactured and output in any suitable form. Non-limiting examples of continuous substrates may include sheets, nonwoven films, rolls, foils, meshes, flexible materials, bundles of continuous filaments or fibers (e.g., ceramic or polymer fibers). Continuous substrates may also include a carrier or sheet on which one or more discontinuous substrates are mounted.

[0046] As described above, during some material layer deposition processes, changes in substrate heating can cause changes in one or more properties of the material layer deposited on the substrate. For example, changes in substrate heating can cause variations in the thickness of the material layer across the substrate and thickness inhomogeneities. Changes in substrate heating can also cause variations in the composition and inhomogeneities across the substrate. Furthermore, changes in substrate heating can further cause variations in the resistivity of the material layer across the substrate, for example, due to variations in dopant concentration. In order to limit substrate heating variations of the substrate 2 during the deposition of material layer 4 onto the substrate 2, for example, to limit cross-substrate variations in one or more properties of the material layer 4 deposited on the substrate 2, and / or to provide further advantages, a chamber device 104 is provided.

[0047] refer to Figure 2This illustration shows a processing fluid source 102 and a controller 108 according to an example of the present disclosure. In the illustrated example, the processing fluid source 102 is configured to deliver one or more precursors via a processing fluid 10 selected for depositing a material layer 4 onto a silicon-complementing substrate 2, and epitaxially therewith with the substrate 2, and in this respect includes a silicon-containing material layer precursor source 116. Alternatively, it is also contemplated that the processing fluid source 102 includes one or more of a metal-containing material layer precursor source 118, a dopant-containing material layer precursor source 120, an etchant source 122, and a diluent / carrier fluid source 124. Although shown and described herein with certain elements and specific arrangements, it should be understood and recognized that the processing fluid source 102 may include additional elements and / or omit one or more elements shown and described herein, and may have different arrangements in other examples, still within the scope of this disclosure.

[0048] A silicon-containing material layer precursor source 116 is coupled to a chamber device 104 via a processing fluid supply conduit 110, includes a silicon-containing material layer precursor 16, and is configured to deliver the silicon-containing material layer precursor 16 to the chamber device 104 via the processing fluid 10. The silicon-containing material layer precursor source 116 may be coupled to the chamber device 104 via a flow control device, such as a mass flow meter (MFM) device or a mass flow controller (MFC) device. In some examples, the silicon-containing material layer precursor 16 may include a non-chlorinated silicon-containing material layer precursor. Examples of suitable non-chlorinated silicon-containing material layer precursors include silanes (SiH4), dichlorosilanes (Si2H6), propanes (Si3H8), and more advanced non-chlorinated silicon-containing material layer precursors. According to some examples, the silicon-containing material layer precursor may include a chlorinated silicon-containing material layer precursor. Examples of suitable chlorinated material layer precursors include chlorosilanes (H3SiCl), dichlorosilanes (H2SiCl2), trichlorosilanes (HCl3Si), and more advanced chlorinated silicon-containing material layer precursors. It is also conceivable that the silicon-containing material layer precursor source 116 may be configured to deliver two or more of the aforementioned silicon-containing material layer precursors to the chamber device 104, either independently of each other or as a mixture of both, and still within the scope of this disclosure.

[0049] The metal-containing material layer precursor source 118 and the dopant-containing material layer precursor source 120 are similar to the silicon-containing material layer precursor source 116, and further include a metal-containing material layer precursor 18 and a dopant-containing material layer precursor 20, respectively. It is contemplated that the metal-containing material layer precursor 18 may include germanium, and in this respect, the metal-containing material layer precursor 18 may include a non-germanium chloride compound (e.g., germanane (GeH4)) or a germanium chloride compound (e.g., gallium trichloride (GaCl3)). The dopant-containing material layer precursor 20 may include one or more of p-type and / or n-type dopants. For example, the dopant-containing material layer precursor 20 may include a p-type dopant such as boron (B) or indium (In) and / or an n-type dopant such as arsenic (As) or phosphorus (P). Non-limiting examples of suitable dopant-containing material layer precursors include diborane (B2H6) and arsine (AsH4).

[0050] Etching source 122 and diluent / diluent fluid source 124 are similar to silicon-containing material layer precursor source 116 and are connected to chamber device 104 via process fluid supply conduit 110, comprising etchant 22 and carrier / diluent fluid 24 respectively, and configured to deliver flows of etchant 22 and carrier / diluent fluid 24 to chamber device 104 via process fluid 10 respectively. In some examples, etchant source 122 may be configured to provide etchant 22 as a separate fluid flow to chamber device 104, for example for cleaning and / or purging chamber device 104, or to mix with one or more of the aforementioned material layer precursors, for example, in cases where selectivity is required in deposition and / or etching rates during processes where substrate 2 has both exposed epitaxial surfaces and amorphous or polycrystalline surfaces. According to some examples, diluent / diluent fluid source 124 may be configured to provide carrier / diluent fluid 24 as a separate flow to chamber device 104, for example for purging chamber device 104, and to mix with one or more of the aforementioned material layer precursors (e.g., diluent fluid or carrier fluid). It is also conceivable that the diluent / carrier fluid source 124 may be configured to mix the carrier / diluent fluid 24 with the etchant 22, and this remains within the scope of this disclosure. Examples of suitable etchants include halide-containing compositions, such as chlorine-containing compositions, such as hydrochloric acid (HCl) and chlorine (Cl2), and fluorine-containing compounds, such as hydrofluoric acid (HF) and fluorine (F2). Examples of suitable diluent / carrier fluids include hydrogen (H2) and nitrogen (N2), and rare gases such as argon (Ar), helium (He), and krypton (Kr).

[0051] refer to Figure 3This document illustrates a chamber device 104 according to an example of the present disclosure. In the illustrated example, chamber device 104 has a monocrystalline crossflow architecture and includes a chamber body 126, an injection flange 128, an exhaust flange 130, an upper heater element array 200, an upper reflector 300, a lower heater element array 400, a lower reflector 500, and one or more non-contact temperature sensors 600. As shown and described herein, chamber device 104 also includes a separator 134, a substrate support 136, a support member 138, a shaft member 140, and a lifting and rotating module 142. Although shown and described herein including certain elements and having a particular arrangement, it should be understood and recognized that chamber device 104 may include additional elements and / or exclude elements shown and described herein, and may have different architectures in other examples, still within the scope of this disclosure.

[0052] The chamber body 126 is formed of ceramic material 144 and has an injection end 146 and a longitudinally opposed discharge end 148. An injection flange 128 abuts the injection end 146 of the chamber body 126, connects to a processing fluid supply conduit 110, and supplies processing fluid to the source 102 (…). Figure 1 (As shown) fluidly connects to the interior 150 of the chamber body 126. The exhaust flange 130 abuts the exhaust end 148 of the chamber body 126, connects to the exhaust duct 112, and fluidly connects the interior 150 of the chamber body 126 to the exhaust source 106. Figure 1 (As shown). In some examples, the ceramic material 144 forming the chamber body 126 may comprise (or be composed of) a material transparent to electromagnetic radiation in the infrared band. For example, the ceramic material 144 may comprise fused silica, quartz, or sapphire (or be composed of or be composed of). According to some examples, the injection flange 128 may be shown and described as in U.S. Patent No. 11,053,591 to Ma et al., July 6, 2021, and the vent flange 130 may be shown and described as in U.S. Patent No. 11,168,395 to Sreeram et al., November 9, 2021, the contents of which are incorporated herein by reference in their entirety.

[0053] It is conceivable that the chamber body 126 has an upper wall 152, a lower wall 154, a first side wall 156, and a second side wall 158. The upper wall 152 may be generally planar and extends longitudinally between the injection end 146 and the discharge end 148 of the chamber body 126. The lower wall 154 may also be planar and similarly extends longitudinally between the injection end 146 and the discharge end 148 of the chamber body 126, and is further spaced from the upper wall 152 by the interior 150 of the chamber body 126. The first side wall 156 extends longitudinally between the injection end 146 and the discharge end 148 of the chamber body 126, connecting the upper wall 152 of the chamber body 126 to the lower wall 154 of the chamber body 126, and may also be generally planar. The second side wall 158 is similar to the first side wall 156, but is further separated from the first side wall 156 by the interior 150 of the chamber body 126, and may be substantially parallel to the first side wall 156 of the chamber body 126. In some examples of this disclosure, the walls (152-158) of the chamber body 126 may define a generally rectangular flow region within the chamber body 126, which connects the injection flange 128 and the exhaust flange 130 of the connecting chamber assembly 104. As those skilled in the art will understand in light of this disclosure, a generally rectangular flow can facilitate laminar flow of the process fluid 10 within the interior 150 of the chamber body 126, thereby facilitating the tunability of the trans-substrate properties of the material layer 4 using the injection flange 128. Although a generally rectangular shape is shown and described herein, it should be understood and recognized that in other examples of this disclosure, the chamber body 126 may have different shapes, such as arcuate or dome-shaped, and is still within the scope of this disclosure.

[0054] It is conceivable that the chamber body 126 has one or more external ribs 160. The one or more external ribs 160 extend laterally around the outer surface 162 of the chamber body 126. The one or more external ribs 160 may be one of a plurality of external ribs 160, which are substantially parallel to each other, longitudinally spaced apart from each other between the injection end 146 and the discharge end 148 of the chamber body 126, and extend continuously around the outer surface 162 of the chamber body 126. It is further conceivable that the chamber body 126 is configured relative to the external environment 12 (outside the chamber body 126). Figure 1(As shown) a reduced pressure is maintained within chamber body 126. In this regard, it is conceivable that the pressure within the interior 150 of chamber body 126 may be maintained between about 0.1 Torr and about 760 Torr, or between about 0.1 Torr and about 700 Torr, or even between about 0.1 Torr and about 100 Torr, during the deposition of material layer 4 onto substrate 2. As those skilled in the art will understand in light of this disclosure, this allows the process fluid 10 to flow in a laminar flow mode between the inlet end 146 and the outlet end 148 of chamber body 126, due to the generally rectangular shape of the interior of chamber body 126 at low pressure, thereby providing tunability of the trans-substrate material layer properties using lateral mass flow adjustment. Although shown and described herein with nine (9) external ribs, it should be understood and recognized that in other examples, chamber body 126 may have fewer or more ribs, and this is still within the scope of this disclosure.

[0055] refer to Figure 4 It is conceivable that each of one or more of the external ribs 160 has an upper rib portion 164, a lower rib portion 166, and a first side rib portion 168 and a second side rib portion 170. The upper rib portion 164 projects upward (relative to gravity) from the outer surface 162 of the chamber body 126 and in a direction opposite to the interior 150 of the chamber body 126. It is further conceivable that the upper rib portion 164 of the one or more external ribs 160 is substantially orthogonal to the outer surface 162 of the chamber body 126, and the upper rib portion 164 is further orthogonal to either (or both) the first sidewall 156 and the second sidewall 158 of the chamber body 126, and the upper rib portion 164 covers the lower rib portion 166 of one or more of the one or more external ribs 160. The lower rib portion 166 protrudes downward from the outer surface 162 of the lower wall 154 of the chamber body 126 and in the opposite direction to the upper rib portion 164 of one or more external ribs 160. It is also substantially orthogonal to the lower wall 154 of the chamber body 126 and may be further substantially orthogonal to the first side wall 156 and the second side wall 158 of the chamber body 126.

[0056] It is conceivable that a first side rib portion 168 of one or more external ribs 160 protrudes laterally from the chamber body 126 in a direction opposite to the interior 150 of the chamber body 126. The first side rib portion 168 may further be substantially orthogonal to either (or both) a first sidewall 156 or a second sidewall 158 of the chamber body 126, and extend vertically between an upper rib portion 164 and a lower rib portion 166 of one or more external ribs 160. It is further conceivable that the first side rib portion 168 connects the upper rib portion 164 of one or more external ribs 160 to the lower rib portion of one or more external ribs 160, for example, at a weld joint, and that a second side rib portion 170 similarly connects the upper rib portion 164 of one or more external ribs 160 to the lower rib portion 166 of one or more external ribs 160. In this regard, it is conceivable that the second side rib portion 170 protrudes laterally from the second side wall 158 of the chamber body 126 and in a direction laterally opposite to the first side rib portion 168 of one or more external ribs 160, and is substantially orthogonal to the second side wall 158 of the chamber body 126, and extends parallel to the upper rib portion 164 and lower rib portion 166 of one or more external ribs 160.

[0057] In some examples of this disclosure, one or more of the walls 152-158 and ribs 164-170 of the chamber body 126 may be formed from a single, monolithic ceramic workpiece 174 using subtractive manufacturing techniques (e.g., by milling or boring). In this regard, it is conceivable that the upper wall 152 ( Figure 3 (as shown) and one or more external ribs 160 ( Figure 3 One or more of the upper rib portions 164 (shown) can be formed from a single ceramic workpiece 174 using subtractive manufacturing techniques. The lower wall 154 of the chamber body 126 (shown) Figure 3 As shown) and one or more of the lower rib portions 166 of the outer ribs 60 can be formed from a single piece of ceramic workpiece 176 using subtractive manufacturing techniques. In other aspects, it is also conceivable that the first sidewall 156 of the chamber body 126 ( Figure 3 (as shown) and one or more of the first side rib portions 168 of one or more of the external ribs 160, and / or the second sidewall 158 of the chamber body 126 (as shown) Figure 3The second side rib portion 170 (shown) and one or more of the plurality of side rib portions 170 can be formed from a single monolithic ceramic workpiece 176 and a single monolithic ceramic workpiece 178, respectively, using subtractive manufacturing techniques. As those skilled in the art will understand in view of this disclosure, forming one or more walls and rib portions extending therefrom can simplify the manufacture of the chamber body 126, for example by limiting (or eliminating) the need to manufacture the chamber body 126 using additive manufacturing techniques (such as welding). As those skilled in the art will also understand in view of this disclosure, forming the upper wall 152 and the upper rib portion 164 using subtractive techniques can also limit geometric deformation otherwise imposed by certain additive manufacturing techniques (such as welding), by eliminating such deformation that may affect the transmission from the upper heater element array 200 to the interior 150 ( Figure 3 The effects of electromagnetic radiation (and associated thermal changes) shown in the figure are used to improve the material layer 4. Figure 1 The tunability of the transsubstrate characteristics (as shown).

[0058] Continue to refer to Figure 3 It is conceivable that the partition 134 is formed of an opaque material 182 and disposed within the interior 150 of the chamber body 126. It is also conceivable that the partition 134 divides the interior 150 of the chamber body 126 into an upper chamber 184 and a lower chamber 186, and that the partition 134 further defines a partition aperture 188 passing through it, which fluidly connects the upper chamber 184 of the chamber body 126 to the lower chamber 186. In some examples of this disclosure, the opaque material 182 forming the partition 134 may be a material opaque to electromagnetic radiation (e.g., electromagnetic radiation in the infrared band). According to some examples, the opaque material 182 may be a ceramic material. Examples of suitable ceramic materials include silicon carbide, such as bulk silicon carbide, and other ceramics opaque to electromagnetic radiation in the infrared band.

[0059] A substrate support 136 is disposed within the interior 150 of the chamber body 126 and configured to support the substrate 2 during the deposition of the material layer 4 onto the substrate 2. In this regard, it is contemplated that the substrate support 136 may be at least partially disposed within the separator aperture 188 and supported within the chamber body 126 for rotation about the axis of rotation 190. The substrate support 136 may be further formed of an opaque material 192, which is also opaque to electromagnetic radiation (e.g., electromagnetic radiation in the infrared band). It is contemplated that the lower surface of the substrate support 136 and the inner surface of the lower wall 154 define a lower chamber height 111 therebetween, and the upper surface of the substrate support 136 and the inner surface of the upper wall 152 of the chamber body 126 define an upper chamber height 113, and the lower chamber height 111 may be smaller than the upper chamber height 113. As those skilled in the art will understand from this disclosure, this can limit the operating costs of the chamber device 104, for example by limiting the amount of purge fluid and / or etchant required to be supplied to the chamber body, to prevent buildup within the mechanical clearance defined within the interior 150 of the chamber body 126. In some examples of this disclosure, the opaque material 192 may comprise a carbonaceous material, such as a bulk carbonaceous material. Examples of suitable carbonaceous materials include graphite and pyrolytic carbon, and, as a non-limiting example, may also include a ceramic coating, such as silicon carbide. Examples of suitable substrate supports include those shown and described in U.S. Patent Application Publication No. 2022 / 0352006A1, filed April 27, 2022, by Huang et al., the contents of which are incorporated herein by reference in their entirety.

[0060] Support member 138 and shaft member 140 connect substrate support 136 to lifting and rotating module 142 to allow substrate support to rotate about axis of rotation 190. In this regard, it is conceivable that support member 138 is arranged within the lower chamber 186 of chamber body 126 and along axis of rotation 190, rotatably fixed relative to substrate support 136 about axis of rotation 190, and connects substrate support 136 to shaft member 140. Shaft member 140 is then rotatably fixed relative to support member 138 about axis of rotation 190, arranged along axis of rotation 190, and extends through a through-hole defined in lower wall 154 of chamber body 126 and into external environment 12 outside chamber device 104. Further, it is conceivable that shaft member 140 connects substrate support 136 to lifting and rotating module 142 via support member 138, shaft member 140 being at least partially arranged within tube member 194 (…). Figure 4As shown, the tubular member 194 is attached (e.g., via a welded joint) to the lower wall 154 of the chamber body 126, and either (or both) of the support member 138 and the shaft member 140 is formed of a transparent material 196, such as a material that is transparent to electromagnetic radiation in the infrared band. Examples of suitable transparent materials include certain ceramic materials, such as fused silica and quartz, as well as sapphire.

[0061] The lifting and rotating module 142 is configured to transmit rotation R to the substrate support 136 for rotation about the rotation axis 190 via the shaft member 140 and the support member 138. It is conceivable that the lifting and rotating module 142 is further configured to place the substrate 2 onto and remove it from the substrate support 136. In this regard, it is conceivable that, after loading and unloading the substrate 2 into and from the chamber body 126, the placement and removal of the substrate 2 from the substrate support 136 can be achieved using a plurality of lifting pins slidably received within the substrate support 136 and lifting pin actuators extending around the shaft member 140. The loading and unloading of the substrate 2 from the chamber body 126 can be accomplished using a gate valve 115 coupled to the injection flange 128 and a substrate transfer robot coupled to the injection flange 128 via the gate valve. Examples of lifting pins and lifting pin actuators include those shown and described in U.S. Patent Application Publication No. 2023 / 0116427A1, filed October 7, 2022, the contents of which are incorporated herein by reference in their entirety.

[0062] One or more non-contact temperature sensors 600 are supported above the chamber body 126 and configured to directly and in real-time acquire substrate temperature measurements 602 of the substrate 2 and / or material layer 4 during the deposition of the material layer 4 onto the substrate 2 using electromagnetic radiation emitted by the substrate 2 and / or material layer 4. Figure 11(As shown). In this regard, it is conceivable that one or more non-contact temperature sensors 600 are supported above the chamber body 126 and fixed relative to the upper reflector 300. In another aspect, it is also conceivable that one or more non-contact temperature sensors 600 are configured to communicate with the controller 108, for example, via a wired or wireless link 114, to provide a substrate temperature measurement 602 to the controller 108. The controller 108 may in turn be configured to use the substrate temperature measurement 602 to control the upper heater element array 200 and / or the lower heater element array 400, thereby operatively coupling one or more non-contact temperature sensors 600 to the upper heater element array 200 and / or the lower heater element array 400. As those skilled in the art will understand from this disclosure, employing one or more non-contact temperature sensors supported above the chamber body 126 can limit temperature deviations of the substrate 2 and / or material layer 4 during deposition onto the substrate 2, for example, by enabling the temperature of the substrate 2 and / or material layer 4 to be controlled (and regulated) substantially in real time with respect to the acquisition of the temperature of the substrate 2 and / or material layer 4.

[0063] In the illustrated example, one or more non-contact temperature sensors 600 are first substrate pyrometers 600, and substrate temperature measurement is a first substrate temperature measurement 602. The chamber device 104 also includes a second substrate pyrometer 604, a third substrate pyrometer 606, and a chamber pyrometer 608. The second substrate pyrometer 604 is similar to the first substrate pyrometer 600 and is additionally configured to obtain a second substrate temperature measurement 610 of the substrate 2 and / or material layer 4 at a radially outward location of the first substrate temperature measurement 602 during deposition onto the substrate 2. Figure 11 (As shown). In view of this disclosure, as those skilled in the art will understand, using more than one substrate temperature measurement (e.g., two or more of the first substrate temperature measurement 602, the second substrate temperature measurement 610, and the third substrate temperature measurement 612) to control the temperature of the substrate 2 and / or the material layer 4 can improve the temperature control of the substrate 2 and / or the material layer 4 during deposition onto the substrate, for example by averaging the cross-substrate temperature variation, which would otherwise cause a single substrate temperature measurement to misrepresent the actual substrate temperature.

[0064] The third substrate pyrometer 606 may also be similar to the first substrate pyrometer 600, and is further configured to obtain a third substrate temperature measurement 612 of the substrate 2 and / or material layer 4 at a position radially mid (e.g., between) the positions where the first substrate pyrometer 600 and the second substrate pyrometer 604 respectively obtain the first substrate temperature measurement 602 and the second substrate temperature measurement 610. Figure 11(As shown). In view of this disclosure, those skilled in the art will also understand that controlling the substrate temperature using temperature measurements (e.g., two or more of the first substrate temperature measurement 602, the second substrate temperature measurement 610, and the third substrate temperature measurement 612) obtained at different radial offsets relative to the rotation axis 190 can limit the temperature variation of the substrate 2 and / or the material layer 4 during the deposition of the material layer 4 onto the substrate 2, for example, by using individual heater elements included in the upper heater element array 200 and / or the lower heater element array 400 to achieve trans-substrate temperature difference control (e.g., center-to-edge difference) and / or trans-substrate temperature gradient control (e.g., a second-order or higher-order function from center to edge).

[0065] The chamber pyrometer 608 is similar to the first substrate pyrometer 600 and is additionally configured to acquire a chamber body temperature measurement 644 using electromagnetic radiation emitted by the chamber body 126, for example, during the deposition of material layer 4 onto substrate 2. It is contemplated that the controller 108 operatively couples the chamber pyrometer 608 to a coolant source, for example, to regulate the flow of coolant 616 supplied to the chamber body 126 to control the temperature of the ceramic material 144 forming the chamber body 126. In some examples of this disclosure, the chamber device may include one or more coolant control features 650. Figure 8 As shown), this limits variations in the flow and / or distribution of coolant on the outer surface 162 of the chamber body 126 and / or within the optical path of the aforementioned pyrometer, thereby limiting (or eliminating) the need for chamber-specific coolant supply settings for chamber device 104 relative to other chamber devices, thus simplifying the installation and / or maintenance of chamber device 104. In this regard, one or more coolant control features 650 may include a single one-piece reflector body; a single one-piece reflector frame; and air gap closures and gaskets arranged around the periphery of the upper reflector 300.

[0066] refer to Figure 4 and Figure 5 This illustration shows a portion of a chamber assembly 104 comprising an upper heater element array 200 and an upper reflector 300, according to an example of the present disclosure. In the illustrated example, the upper heater element array 200 includes a plurality of filament-type upper linear luminaires 202 vertically supported between the chamber body 126 and the upper reflector 300. It is conceivable that the plurality of filament-type upper linear luminaires 202 are supported above the chamber body 126 and by the upper wall 152 of the chamber body 126. Figure 3 (As shown) Optical coupling to the interior 150 of the chamber body 126. Figure 3 (As shown). It is also conceivable that multiple filament-type linear luminaires 202 are configured to radiatively heat the substrate 2 using electromagnetic radiation in the infrared band. Figure 1As shown, the infrared band is generated using an electric current, which is applied to and individually adjustable in each of the plurality of filament-type on-line luminaires 202. Further, it is conceivable that the plurality of filament-type on-line luminaires 202 extend longitudinally between the injection end 146 and the discharge end 148 of the chamber body 126, the plurality of filament-type on-line luminaires 202 are angled (e.g., substantially orthogonal) relative to one or more external ribs 160 extending around the outer surface 162 of the chamber body 126, and the plurality of filament-type on-line luminaires 202 are laterally spaced apart from each other between the first sidewall 156 and the second sidewall 158 of the chamber body 126.

[0067] In some examples of this disclosure, one or more of the plurality of filament-type upper linear luminaires 202 may be substantially parallel to either (or both) the first sidewall 156 and the second sidewall 158 of the chamber body 126. According to some examples, each of the plurality of filament-type upper linear luminaires 202 may be substantially parallel to each other and / or substantially parallel to either (or both) the first sidewall 156 and the second sidewall 158 of the chamber body 126. Advantageously, relative to a chamber arrangement having upper linear luminaires extending parallel to the chamber body, the plurality of filament-type upper linear luminaires 202 are arranged orthogonally to one or more external ribs 160, dispersing the one or more external ribs 160 pairs of light transmitted to the interior 150 of the chamber body 126. Figure 3 The scattering effect of electromagnetic radiation in (shown) is limited (or eliminated) by those skilled in the art in view of this disclosure. Figure 1 The higher-order (e.g., ripple) trans-substrate temperature variations (as shown) may otherwise be impossible to correct by individually tuning the current applied to each individual lamp in the plurality of filament-type on-line luminaires 202. In view of this disclosure, as those skilled in the art will also understand, limiting (or eliminating) higher-order trans-substrate temperature variations can further limit the material layer 4 ( Figure 1 The trans-substrate variation within (as shown) is relative to the material layer deposited in a chamber having an upper linear luminaire extending parallel to the upper rib of the chamber body, such as Figure 16 and Figure 17 As shown, this increases the yield of semiconductor devices formed using material layer 4.

[0068] The upper heater element array 200 can be positioned asymmetrically above the chamber body 126. In this respect, the upper heater element array 200 can be laterally offset above the chamber body 126 relative to the axis of rotation 190, for example, such that the upper heater element array 200 is laterally separated from the axis of rotation 190 by a first lateral spacing distance 218. Figure 9 As shown), and further laterally separated from the rotation axis 190 by a second lateral spacing distance 220 (as shown), Figure 9As shown), in the illustrated example of chamber device 104, the second lateral spacing distance 220 is greater than the first lateral spacing distance 218. In another aspect, the upper heater element array 200 may be longitudinally offset above the chamber body 126 relative to the axis of rotation 190, for example, such that the upper heater element array 200 is offset from the axis of rotation 190 by a first longitudinal spacing distance 230. Figure 10 As shown), and further offset by a second longitudinal spacing distance 232 at the longitudinally opposite discharge end of the upper heater element array 200 relative to the rotation axis 190. Figure 10 As shown), in the example shown, the first longitudinal spacing distance 230 is greater than the second longitudinal spacing distance 232. It is also conceivable that the upper heater element array 200 can be supported above the chamber body 126 such that the upper heater element array 200 is both laterally and longitudinally offset relative to the rotation axis 190, and remains within the scope of this disclosure. Advantageously, arranging a plurality of filament-type upper linear luminaires 202 asymmetrically above the chamber body 126 relative to the rotation axis 190 can limit (or eliminate) the substrate 2 ( Figure 1 Local hot and cold spots on the substrate 2 (as shown) could otherwise exist in a chamber assembly with upper linear luminaires symmetrically arranged above the chamber body, thus limiting (or eliminating) trans-substrate temperature variations that might otherwise be associated with the symmetrical arrangement of the upper linear luminaires. Limiting the trans-substrate temperature variation of the trans-substrate 2 can further limit the material layer 4 ( Figure 1 Trans-substrate variation within (as shown), such as Figure 16 and Figure 17 As shown, this could potentially increase the yield of semiconductor devices formed using material layer 4.

[0069] Continue to refer to Figure 4 and Figure 5In the example shown, the plurality of filament-type upper linear luminaires 202 include eleven (11) filament-type upper linear luminaires. In this respect, the plurality of filament-type upper linear luminaires 202 include a transversely inner first upper linear luminaire 204 and a transversely inner second upper linear luminaire 206, a transversely outer first upper linear luminaire 208 and a transversely outer second upper linear luminaire 210, and a transversely intermediate first upper linear luminaire 212 and a transversely intermediate second upper linear luminaire 214. The transversely inner first upper linear luminaire 204 extends longitudinally between the injection end 146 and the discharge end 148 of the chamber body 126, is substantially orthogonal to one or more external ribs 160 extending around the outer surface 162 of the chamber body 126, and may be substantially parallel to either (or both) the first sidewall 156 and the second sidewall 158 of the chamber body 126. Examples of suitable filament-type linear lamps include those shown and described in U.S. Patent Application Publication No. 2005 / 0094989A1, filed November 9, 2004, the contents of which are incorporated herein by reference in their entirety. Although shown and described herein as having eleven (11) filament-type upper linear lamps, it should be understood and appreciated that upper heater element arrays may have fewer or more filament-type upper linear lamps and are still within the scope of this disclosure.

[0070] The second upper linear luminaire 206, which is laterally similar to the first upper linear luminaire 204, can be further separated from the first upper linear luminaire 204 via the rotation axis 190, and can extend further parallel to the first upper linear luminaire 204. The first upper linear luminaire 208 and the second upper linear luminaire 210, which are laterally similar to the first upper linear luminaire 204, can be further separated from each other via the rotation axis 190, and can be further separated from the rotation axis via the first upper linear luminaire 204 and the second upper linear luminaire 206, respectively. The transverse intermediate first upper linear luminaire 212 and transverse intermediate second upper linear luminaire 214 can be similar to the transverse inner first upper linear luminaire 204, and can be further separated from each other by the rotation axis 190. Furthermore, the transverse inner first upper linear luminaire 204 can be separated from the transverse outer first upper linear luminaire 208 and transverse inner second upper linear luminaire 206, and the transverse inner second upper linear luminaire 206 can be separated from the transverse outer second upper linear luminaire 210. Advantageously, the upper heater element array 200 is supported above the chamber body 126 such that the plurality of filament-type upper linear luminaires 202 are substantially orthogonal to one or more external ribs 160, restricting one or more external ribs 160 in the material layer 4 ( Figure 1 During deposition onto substrate 2, substrate 2 may be otherwise imparted (as shown). Figure 1The heating shielding effect (as shown) in a chamber device, for example in which the upper linear luminaire is arranged parallel to the outer ribs of the chamber body, enables cross-substrate temperature adjustment using luminaire power offset. As those skilled in the art will understand from this disclosure, limiting the shielding of the substrate 2 during the deposition of material layer 4 onto the substrate 2 can also limit the variation in material layer 4 imparted by the shielding effect of one or more outer ribs 160 relative to a chamber device having upper linear luminaires extending parallel to the outer ribs of the chamber body, such as... Figure 16 and Figure 17 As shown, this could potentially increase the yield of semiconductor devices formed using a material layer 4 deposited on substrate 2.

[0071] Continue to refer to Figure 4 and Figure 5 It is conceivable that, in some examples of this disclosure, the plurality of filament-type upper linear luminaires 202 of the upper heater element array 200 may be laterally symmetrically distributed relative to each other. In this regard, it is conceivable that each of the plurality of filament-type upper linear luminaires 202 may be separated by a common spacing or pitch 216. In some examples, the common spacing or pitch 216 may cause the pair of plurality of filament-type upper linear luminaires 202 to be separated from the common radial offset of the axis of rotation 190. According to some examples, the upper heater element array 200 may be laterally displaced, for example, such that the distance between one of the laterally first upper linear luminaire 204 and the laterally second upper linear luminaire 206 and the axis of rotation 190 is less than about half of the common spacing or pitch 216 of the plurality of filament-type upper linear luminaires 202 included in the upper heater element array 200. For example, one of the first lateral upper linear luminaire 204 and the second lateral upper linear luminaire 206 may be separated from the axis of rotation 190 by about 1 mm and about half of the common spacing or pitch 216 of the plurality of filament-type upper linear luminaires 202 included in the upper heater element array 200.

[0072] According to certain examples of this disclosure, one or more laterally adjacent pairs of a plurality of filament-type upper linear luminaires 202 may be separated from each other by a spacing different from the spacing defined between at least one pair of laterally adjacent upper linear luminaires of the plurality of filament-type upper linear luminaires 202. For example, a laterally adjacent pair of the plurality of filament-type upper linear luminaires 202 may be laterally separated by a reduced upper luminaire spacing distance 226, which is smaller than the common spacing or pitch 216 defined between another pair of laterally adjacent upper linear luminaires of the plurality of filament-type upper linear luminaires 202. Alternatively, a laterally adjacent pair of filament-type upper linear luminaires 202 may be laterally separated by an increased upper luminaire spacing distance 228, which is greater than the common spacing or pitch 216 defined between another pair of laterally adjacent upper linear luminaires of the plurality of filament-type upper linear luminaires 202. Advantageously, examples of upper heater element arrays 200 with reduced upper luminaire spacing 226 or increased upper luminaire spacing 228 position each of the plurality of filament-type upper linear luminaires 202 at a different (e.g., unique) radial offset relative to the rotation axis 190, thereby increasing the number of cross-substrate temperature adjustment positions, for example, from six (6) adjustment positions to eleven (11) adjustment positions. As those skilled in the art will understand in light of this disclosure, increasing the number of cross-substrate temperature adjustment positions can further limit the cross-substrate 2 ( Figure 1 The trans-substrate temperature variation (as shown) further limits the shading effect of one or more external ribs 160 relative to the chamber device having an upper linear luminaire extending parallel to the chamber body, thereby potentially imparting material layer 4 ( Figure 1 The changes shown (e.g., by reducing trans-substrate non-uniformity by 30% relative to the chamber device with symmetrically spaced upper linear luminaires) can potentially increase the yield of semiconductor devices formed using material layer 4 deposited on substrate 2.

[0073] In some examples of this disclosure, the increased number of upper heater elements with a common spacing or pitch 216 can be used to achieve the aforementioned adjustment of the position of the upper heater elements, thereby limiting the complexity of the chamber device 104. In this regard, it is conceivable that the upper heater element array 200 may be laterally offset relative to the axis of rotation 190 toward one of the first sidewall 156 and the second sidewall 158 of the chamber body 126, for example, such that the first upper linear luminaire 204 is laterally offset from the axis of rotation 190 by a lateral offset 222, which is different from the second upper linear luminaire offset 224. In some examples, the first upper linear luminaire offset 222 may be smaller than the second upper linear luminaire offset 224. For example, the lateral inclination of the first upper linear luminaire offset 222 may be between about 5% and about 50% of the lateral inclination of the second upper linear luminaire offset 224, or between about 5% and about 25% of the lateral inclination of the second upper linear luminaire offset 224, or even between about 5% and about 10% of the lateral inclination of the second upper linear luminaire offset 224. Advantageously, such an example can be deposited on substrate 2 ( Figure 1 Material layer 4 (as shown) Figure 1 The trans-substrate temperature variation (as shown) is limited to approximately 40% of the temperature variation of other material layers of the same type deposited on a substrate in a chamber device with a symmetrical array of heater elements, such as... Figure 16 and 17 As shown, modifications to the reflectors used in the chamber device are also limited for use in chamber device 104. As those skilled in the art will understand from this disclosure, the second upper linear luminaire offset 224 in the lateral direction may be greater than the first upper linear luminaire offset 222 in the lateral direction, and is still within the scope of this disclosure.

[0074] like Figure 5 As shown, it can be envisioned that the upper reflector 300 is supported on the upper wall 152 of the main body 126 of the chamber. Figure 3Above the upper heater element array 200, the upper reflector 300 reflects electromagnetic radiation emitted by the plurality of filament-type upper linear luminaires 202 toward the chamber body 126 in a direction opposite to the chamber body 126. In this respect, it is conceivable that the upper reflector body 302 is formed of an upper reflector bulk metal material 304. In another aspect, it is also conceivable that the upper reflector 300 includes one or more reflective layers covering the upper reflector bulk metal material 304. For example, the upper reflector 300 may include a first reflective layer 306 and a second reflective layer 308. The first reflective layer 306 may cover the bulk metal material 304 forming the upper reflector body 302. The second reflective layer 308 may cover the first reflective layer 306. In some examples, the upper reflector bulk metal material 304 may include an aluminum-containing material (or be composed of or substantially composed of it), such as an aluminum alloy, such as 6061 aluminum, or a copper- and / or zinc-containing material, such as brass or bronze. Advantageously, such a material can resist zinc leaching in applications where the bulk metal of the upper reflector material undergoes prolonged exposure to liquid, thereby promoting the lifespan of the upper reflector 300 in applications where the upper reflector has a liquid coolant (such as water or ethylene glycol) cooled by the upper reflector body 302.

[0075] It is conceivable that the first reflective layer 306 may have a first reflective layer reflectivity for electromagnetic radiation in the infrared band, which is greater than the reflectivity of the bulk metal material 304 forming the upper reflector body 302. It is also conceivable that the second reflective layer 308 may have a second reflective layer reflectivity substantially equal to that of the first reflective layer. In some examples, the first reflective layer 306 may have a first reflective layer thickness, the second reflective layer 308 may have a second reflective layer thickness, and the second reflective layer thickness may be less than or equal to the first reflective layer thickness. According to some examples, the second reflective layer 308 may include gold (Au) (or be composed of or substantially composed of it), and the first reflective layer 306 may include silver (Ag) (or be composed of or substantially composed of it). Advantageously, forming an upper reflector 300 with the first reflective layer 306 and the second reflective layer 308 can limit the cost of the upper reflector 300 without substantially reducing its reflectivity for electromagnetic radiation in the infrared band, compared to a reflector formed from a relatively thick reflective coating.

[0076] like Figure 5As shown, it is conceivable that the upper reflector 300 can be of a generally rectangular shape. In this respect, the upper reflector 300 can be supported above the chamber body 126 such that the relatively short edge of the upper reflector body 302 covers (or longitudinally opposite) the injection end 146 and the discharge end 148 of the chamber body 126, and the relatively long edge of the upper reflector 300 covers (or laterally opposite) the first sidewall 156 and the second sidewall 158 of the chamber body 126. In the example shown, the upper reflector body 302 has an injection edge 314, a discharge edge 316, a first lateral edge 318, and a second lateral edge 320. The injection edge 314 of the upper reflector body 302 is shorter than the first lateral edge 318 and the second lateral edge 320 of the upper reflector body 302, is substantially linear, extends between the first sidewall 156 and the second sidewall 158 of the chamber body 126, and covers (or longitudinally opposite) the injection end 146 of the chamber body 126. The exhaust edge 316 of the upper reflector body 302 is longitudinally opposite to the injection edge 314 of the upper reflector body 302, extending between the first sidewall 156 and the second sidewall 158 of the chamber body 126, and covering (or longitudinally opposite) the discharge end 148 of the chamber body 126. The first transverse edge 318 of the upper reflector body 302 connects the injection edge 314 to the discharge edge 316 of the upper reflector body 302, laterally inside the first sidewall 156 of the chamber body 126, and may be substantially parallel to the first sidewall 156 of the chamber body 126. The second transverse edge 320 of the upper reflector body 302 is similar to the first transverse edge 318 of the upper reflector body 302, may be substantially parallel to the first transverse edge 318 of the upper reflector body 302, and also connects the injection edge 314 to the discharge edge 316 of the upper reflector body 302. In some examples of this disclosure, either (or both) of the first lateral edge 318 and the second lateral edge 320 may be orthogonal to the injection edge 314 of the upper reflector body 302. According to some examples, the second lateral edge 320 may be substantially orthogonal to either (or both) of the injection edge 314 and the discharge edge 316 of the upper reflector body 302.

[0077] In some examples of this disclosure, the upper reflector body 302 can be integrally formed as a single, one-piece upper reflector body 302. In this respect, the upper reflector body 302 can extend continuously and uninterruptedly between the injection edge 314 and the discharge edge 316. Further, the upper reflector body 302 can also extend continuously and uninterruptedly between the first lateral edge 318 and the second lateral edge 320 of the upper reflector body 302. As those skilled in the art will understand from this disclosure, this can, for example, improve the substrate 2 by limiting (or eliminating) the joints between reflector segments. Figure 1The adjustableness of the cross-substrate temperature variation (as shown) allows the joints to move relative to each other, for example, in response to shape changes associated with thermal cycling. According to some examples, the upper reflector 300 may be formed with two or more reflector sections, thereby simplifying the maintenance of the chamber device 104, for example, by limiting the weight of the sections within the single-person lift weight limits set forth in certain workplace safety regulations. Advantageously, examples of upper reflectors with a single, one-piece upper reflector body 302 can improve the chamber device 104, for example, by limiting (or eliminating) the heating variations potentially introduced by the movement of one section of a multi-segment reflector relative to another section of a multi-segment reflector. Figure 1 The reliability of the single-piece upper reflector body 302 also simplifies the matching of chamber device 104 with another chamber device, due to the reduction in temperature variations that would otherwise be imparted by the multi-segment reflector.

[0078] It can be envisioned that the upper reflector 300 defines a plurality of arcuate recesses 322 in the reflective surface 312 and is connected to the upper wall 152 of the chamber body 126. Figure 3 (As shown) Relative. In the illustrated example, the upper reflector 300 defines a transversely inner first arcuate recess 324 and a transversely inner second arcuate recess 326, a transversely outer first arcuate recess 328 and a transversely outer second arcuate recess 330, and a transversely intermediate first arcuate recess 332 and a transversely intermediate second arcuate recess 334 within the reflective surface 312 of the upper reflector 300. The transversely inner first arcuate recess 324 extends between the injection edge 314 and the discharge edge 316 of the upper reflector body 302. The transversely inner first arcuate recess 324 may further connect the injection edge 314 of the upper reflector body 302 to the discharge edge 316 of the upper reflector body 302. It is also conceivable that the transversely inner first arcuate recess 324 defines an upper recess profile 336 along its longitudinal direction. The upper concave profile 336 may be substantially parabolic, and the upper concave profile 336 further has an upper concave focal point 338 offset from the reflective surface 312 and within the first arcuate concave portion 324 in the transverse direction. In some examples of this disclosure, the upper concave profile 336 may extend continuously and uninterruptedly between the injection edge 314 and the discharge edge 316 of the upper reflector body 302, thereby defining a focal line that includes the upper concave focal point 338 extending longitudinally at a position offset from and parallel to the reflective surface 312 of the upper reflector 300.

[0079] In some examples of this disclosure, virtually all reflective surfaces 312 opposite to the chamber body 3126 may be occupied by a plurality of arcuate recesses 322; in such examples, the upper reflector is perfectly parabolic. According to some examples of this disclosure, the upper reflector 300 may also have a planar surface portion 348. Figure 4(As shown). In such an example, the planar surface portion 348 may extend longitudinally between the injection edge 314 and the discharge edge 316 of the upper reflector 300. In such an example, the planar surface portion 348 may also laterally separate the laterally outer first arcuate recess 328 from the laterally outer second arcuate recess 330.

[0080] According to some examples, the injection edge 314 of the upper reflector 300 can be separated from the rotation axis 190 by an injection edge offset 350, and the longitudinally opposite exhaust edge 316 can be separated from the rotation axis by an exhaust edge offset 352, where one of the injection edge offset 352 and the exhaust edge offset 354 can be greater than the other of the injection edge offset 350 and the exhaust edge offset 352. When the upper reflector 300 is laterally shifted 804 ( Figure 9 As shown, when multiple filament-type linear lamps 202 are introduced at irregular intervals between the first sidewall 156 and the second sidewall 158 of the chamber body 126 relative to the axis of rotation 190, the difference between the injection edge offset 350 and the discharge edge 352 can be substantially equivalent to the second substrate pyrometer hole 628. Figure 8 The longitudinal component of the position change (as shown).

[0081] It can be envisioned that the first upper linear luminaire 204 in the transverse direction is suspended from the upper reflector 300 and fixed relative to the upper reflector 300 by the injection end support 340 and the longitudinally opposite discharge end support 342. The size and dimensions of the injection end support 340 and the longitudinally opposite discharge end support 342 are designed such that the first upper linear luminaire 204 in the transverse direction overlaps with the focal point 338 of the upper recess along the longitudinal length of the first upper linear luminaire 204 in the transverse direction. It can be further envisioned that either (or both) of the injection end support 340 and the longitudinally opposite discharge end support 342 carries the source lead and the return lead, which are connected to the linear filament arranged within the first transversely inner linear luminaire 204. The size and dimensions of the injection end support 340 and the longitudinally opposite discharge end support 342 are designed to position the linear filament relative to the upper recess focal point 338, so as to uniformly distribute the electromagnetic radiation emitted by the first transversely inner linear luminaire 204 within the interior 150 of the chamber body 126. Figure 3 As shown, the interior 150 of the chamber body 126 includes a substrate 2 ( Figure 1 The surface portion shown.

[0082] In some examples, the filament within the first upper linear luminaire 204 in the lateral direction can be substantially centered on the upper recess focal point 338. According to some examples, the filament of the first upper linear luminaire 204 in the lateral direction can be centered on the point between the reflecting surface 312 and the upper recess focal point 338. It is conceivable that, according to some examples of this disclosure, the filament of the first upper linear luminaire 204 in the lateral direction can be centered on the point where the upper recess focal point 338 separates from the reflecting surface 312. Advantageously, centering the filament substantially on the upper recess focal point 338 can limit the intensity of electromagnetic radiation reflected by the first arcuate recess 324 in the lateral direction along an axis inclined relative to the rotation axis 190. Limiting the intensity of electromagnetic radiation reflected by the first arcuate recess 324 in the lateral direction along an axis inclined relative to the rotation axis 190 further reduces the amount of electromagnetic radiation reflected along the substrate 2 ( Figure 1 The trans-substrate temperature variation (as shown) is otherwise related to this reflected electromagnetic radiation. Advantageously, this can limit the material layer 4 ( Figure 1 The variation across the substrate (as shown) is otherwise related to electromagnetic radiation reflected along an axis inclined relative to the rotation axis 190°.

[0083] It is conceivable that the second transverse inner arcuate recess 326 may be similar to the first transverse inner arcuate recess 324, and further separated from the first transverse inner arcuate recess 324 by the rotation axis 190. The second transverse inner arcuate recess 326 may further extend parallel to the first transverse inner arcuate recess 324 and be transversely adjacent to the first transverse inner arcuate recess 324, for example, without an arcuate recess between them. The first transverse outer arcuate recess 328 and the second transverse outer arcuate recess 330 may also be similar to the first transverse inner arcuate recess 324, further separated from each other by the first transverse inner arcuate recess 324 and the rotation axis 190, and further extend parallel to the first transverse inner arcuate recess 324. It can be envisioned that the first lateral arcuate recess 328 defines the first lateral edge 318 of the upper reflector body 302 and is laterally separated from the rotation axis 190 by a lateral offset 344 of the first arcuate recess; the second lateral arcuate recess 330 defines the second lateral edge 320 and is laterally separated from the rotation axis 190 by a lateral offset 346 of the second arcuate recess; and the lateral offset 346 of the second arcuate recess is greater than or less than the lateral offset 344 of the first arcuate recess, such that the upper reflector 300 is asymmetrical with respect to the rotation axis 190. Advantageously, in an example where each of the plurality of filament-type upper linear luminaires 202 is fixed relative to the upper reflector 300 within each of the plurality of arcuate recesses 322, the plurality of filament-type upper linear luminaires 202 may be irregularly (e.g., asymmetrically) spaced apart with respect to the rotation axis 190. Advantageously, this can increase adjustability by providing up to eleven (11) radial positions across substrate 2, at which the transsubstrate temperature profile of substrate 2 can be adjusted by regulating the power applied to the individual filament-type on-linear lamps 202 among the plurality of filament-type on-linear lamps 202.

[0084] The transversely intermediate first arcuate recess 332 and the transversely intermediate second arcuate recess 334 may further resemble the transversely inner first arcuate recess 324 and extend parallel to the transversely inner first arcuate recess 324. The transversely intermediate first arcuate recess 332 may further be transversely intermediate between the transversely inner first arcuate recess 324 and the transversely outer first arcuate recess 328, and the transversely intermediate second arcuate recess 334 may further be transversely intermediate between the transversely inner second arcuate recess 326 and the transversely outer second arcuate recess 330. In this respect, it is conceivable that the transversely intermediate first arcuate recess 332 and the transversely intermediate second arcuate recess 334 separate the transversely outer first arcuate recess 328 from the transversely outer second arcuate recess 330. In some examples of this disclosure, the upper reflector may define a first substrate pyrometer aperture 620. Figure 8 (as shown) and the second substrate pyrometer hole 628 ( Figure 8 (As shown). According to some examples, the lower reflector 500 may define a first arcuate recess 506 in the longitudinal direction therein ( Figure 7(as shown) and the longitudinal outer first arc-shaped recess 510 ( Figure 7 As shown, the first arc-shaped recess 506 in the longitudinal direction can be longitudinally separated from the rotation axis through the first substrate pyrometer hole 620, and the first arc-shaped recess 510 in the longitudinal direction can be longitudinally separated from the first arc-shaped recess 506 in the longitudinal direction through the second substrate pyrometer hole 628. Further, it is conceivable that the upper reflector 300 can define a third substrate pyrometer hole 636 passing through it, and the first arc-shaped recess 332 in the transverse direction can laterally separate the third substrate pyrometer hole 636 from the first arc-shaped recess 324 in the transverse direction.

[0085] The plurality of arcuate recesses 322 defined within the reflective surface 312 of the upper reflector 300 can correspond in number and arrangement to a plurality of filament-type upper linear luminaires 202. In this respect, the first lateral upper linear luminaire 208 can hang from the upper reflector 300 at a position where the first lateral upper linear luminaire 208 is covered by the first lateral arcuate recess 328, the second lateral upper linear luminaire 210 can hang from the upper reflector 300 at a position where the second lateral upper linear luminaire 210 is covered by the second lateral arcuate recess 330, the first lateral middle upper linear luminaire 212 can hang from the upper reflector 300 at a position where the first lateral middle upper linear luminaire 212 is covered by the first lateral middle arcuate recess 332, and the second lateral middle upper linear luminaire 214 can hang from the upper reflector 300 at a position where the second lateral middle arcuate recess 334 is covered by the second lateral middle upper linear luminaire 214.

[0086] It is conceivable that the first upper linear luminaire 208 and the second upper linear luminaire 210 on the outer side can be vertically spaced from the first arcuate recess 328 and the second arcuate recess 330 on the outer side, essentially equivalent to the first upper linear luminaire 204 on the inner side. It is also conceivable that the first upper linear luminaire 212 and the second upper linear luminaire 214 on the middle side are also vertically spaced from the first arcuate recess 332 and the second arcuate recess 334 on the middle side, essentially equivalent to the first upper linear luminaire 204 on the inner side. Advantageously, such spacing can further limit the intensity of electromagnetic radiation reflected by the reflective surface 312 along an axis inclined relative to the rotation axis 190, making the material layer 4 ( Figure 1 The cross-substrate material layer within the (as shown) is a variation of the other material layers deposited in a chamber device without the aforementioned upper linear lamp spacing between the upper reflector and the chamber body (e.g., the same material layer in other aspects). Figure 16The variation across the substrate material layer is approximately 40%. In the example shown, the upper reflector 300 is perfectly parabolic, and in this respect, the entire reflective surface 312 is occupied by eleven (11) arcuate recesses defined within the reflective surface 312 of the upper reflector 300. As those skilled in the art will understand in view of this disclosure, the upper reflector 300 may define fewer or more arcuate recesses in other examples, and still within the scope of this disclosure.

[0087] refer to Figure 6 and Figure 7 This diagram illustrates a portion of a chamber assembly 104 including a lower heater element array 400 and a lower reflector 500. The lower heater element array 400 is similar to the upper heater element array 200, additionally supported below the chamber body 126 (relative to gravity), and separates the lower reflector 500 from the chamber body 126. It is contemplated that the lower heater element array 400 includes a plurality of filament-type lower linear luminaires 402. The plurality of filament-type lower linear luminaires 402 may be similar to a plurality of filament-type upper linear luminaires 202, and may additionally be orthogonally arranged relative to the plurality of filament-type upper linear luminaires 202, and may be larger than the plurality of filament-type upper linear luminaires 202. It is contemplated that the plurality of filament-type upper linear luminaires 202 may be laterally spaced apart from each other between the injection end 146 and the discharge end 148 of the chamber body 126, and each of the plurality of filament-type lower linear luminaires 402 may be substantially parallel to one or more external ribs 160 of the chamber body 126. Although shown and described herein as including multiple filament-type lower linear luminaires 402, it should be understood and recognized that the lower heater element array 400 may additionally include one or more point-type luminaires, and is still within the scope of this disclosure.

[0088] In the illustrated example, the plurality of filament-type down-linear luminaires 402 include a longitudinally inner first down-linear luminaire 404 and a longitudinally inner second down-linear luminaire 406, a longitudinally outer first down-linear luminaire 408 and a longitudinally outer second down-linear luminaire 410, and a longitudinally intermediate first down-linear luminaire 412 and a longitudinally intermediate second down-linear luminaire 414. The longitudinally inner first down-linear luminaire 404 and the longitudinally inner second down-linear luminaire 406 are longitudinally adjacent to each other, with no down-filament-type down-linear luminaires between them, and are separated from each other by a rotation axis 190. It is conceivable that both the longitudinally inner first down-linear luminaire 404 and the longitudinally inner second down-linear luminaire 406 may be further substantially parallel to one or more external ribs 160 extending around the outer surface 162 of the chamber body 126. In some examples, the longitudinally inner first down-linear luminaire 404 and the longitudinally inner second down-linear luminaire 406 may be longitudinally spaced equidistant from the rotation axis 190. According to some examples, the first lower linear luminaire 404 and the second lower linear luminaire 406 in the longitudinal direction may be separated from the axis of rotation 190 by different values, and are still within the scope of this disclosure.

[0089] The first lower linear luminaire 408 and the second lower linear luminaire 410 are similar to the first lower linear luminaire 404 and the second lower linear luminaire 406 in the longitudinal direction, and are further longitudinally separated from the rotation axis 190 by the first lower linear luminaire 404 and the second lower linear luminaire 406 in the longitudinal direction. The first lower linear luminaire 412 and the second lower linear luminaire 414 in the longitudinal direction are also similar to the first lower linear luminaire 404 and the second lower linear luminaire 406 in the longitudinal direction, and are also longitudinally separated from the rotation axis 190 by the first lower linear luminaire 404 and the second lower linear luminaire 406 in the longitudinal direction, and are further longitudinally separated from the first lower linear luminaire 408 and the second lower linear luminaire 410 in the longitudinal direction, respectively. In the example shown, the plurality of filament-type lower linear luminaires 402 include twelve (12) lower filament-type luminaires. As will be understood by those skilled in the art in light of this disclosure, the plurality of filament-type down-linear luminaires 402 may include fewer or more filament-type down-linear luminaires, and are still within the scope of this disclosure.

[0090] The lower reflector 500 is similar to the upper reflector 300 and is additionally supported below the chamber body 126 at a location where the lower heater element array 400 separates the lower reflector 500 from the chamber body 126. It is conceivable that the lower reflector 500 further has a reflective surface 502 opposite to the chamber body 126 and configured to reflect electromagnetic radiation emitted by the lower heater element array 400 toward the chamber body 126 in a direction away from the chamber body 126. It is further conceivable that the lower reflector 500 defines a plurality of arcuate recesses 504 within the reflective surface 502, which may correspond in number and arrangement to the plurality of filament-type lower linear luminaires 402 included in the lower heater element array 400, and the arcuate recesses 504 may be substantially orthogonal to one or more external ribs 160 of the chamber body 126 and / or to the plurality of arcuate recesses 322 defined in the reflective surface 312 of the upper reflector 300. In this regard, it is conceivable that the plurality of arcuate recesses 504 include a longitudinally inner first arcuate recess 506 and a longitudinally inner second arcuate recess 508, a longitudinally outer first arcuate recess 510 and a longitudinally outer second arcuate recess 512, and a longitudinally intermediate first arcuate recess 514 and a longitudinally intermediate second arcuate recess 516, each recess being defined within the reflective surface 502 and opposite to the chamber body 126. In some examples, the plurality of arcuate recesses 504 defined within the lower reflector 500 may be larger than the plurality of arcuate recesses 322 defined within the upper reflector 300. According to some examples, the plurality of arcuate recesses 504 defined within the lower reflector 500 may be substantially orthogonal to the plurality of arcuate recesses 322 defined within the upper reflector 300.

[0091] The first longitudinally extending arcuate recess 506 and the second longitudinally extending arcuate recess 508 are longitudinally adjacent (e.g., without an arcuate recess between them) and separated from each other by a rotation axis 190. They extend longitudinally between the first lateral edge 518 and the second lateral edge 520 of the lower reflector 500 and can extend continuously and uninterruptedly between the first lateral edge 518 and the second lateral edge 520. It is conceivable that the first longitudinally extending lower linear luminaire 404 is supported above and at least partially within the first longitudinally extending arcuate recess 506, for example on the first lateral support 522 and the laterally opposite second lateral support 524, and the first longitudinally extending lower linear luminaire 404 is substantially parallel to the first longitudinally extending arcuate recess 506. It can be further envisioned that the longitudinally inward second lower linear luminaire 406 is supported above and at least partially within the longitudinally inward second arcuate recess 508, and the longitudinally inward second lower linear luminaire 406 is further supported by a first transverse support and a transversely opposite second transverse support, which separates the longitudinally inward second lower linear luminaire 406 from the lower reflector 500.

[0092] The longitudinally outer first arcuate recess 510 and the longitudinally outer second arcuate recess 512 are similar to the longitudinally inner first arcuate recess 506 and the longitudinally inner second arcuate recess 508, and are further longitudinally separated from the rotation axis 190 by the longitudinally inner first arcuate recess 506 and the longitudinally inner second arcuate recess 508. It is conceivable that the longitudinally outer first lower linear luminaire 408 is supported above the longitudinally outer first arcuate recess 510, such that the longitudinally outer first lower linear luminaire 408 is at least partially arranged within the longitudinally outer first arcuate recess 510, and the longitudinally outer second lower linear luminaire 410 is supported above the longitudinally outer second arcuate recess 512, such that the longitudinally outer second lower linear luminaire 410 is at least partially arranged within the longitudinally outer second arcuate recess 512. Further envisioning, the longitudinally intermediate first arcuate recess 514 separates the longitudinally outer first arcuate recess 510 from the longitudinally inner first arcuate recess 506, the longitudinally intermediate second arcuate recess 516 separates the longitudinally outer second arcuate recess 512 from the longitudinally inner second arcuate recess 508, and the longitudinally intermediate first lower linear luminaire 412 is supported above and at least partially within the longitudinally intermediate first arcuate recess 514, and the longitudinally intermediate second lower linear luminaire 414 is supported above and at least partially within the longitudinally intermediate second arcuate recess 516. In the illustrated example, the lower reflector 500 is perfectly parabolic, and in this respect, the entire reflective surface 502 is occupied by twelve (12) arcuate recesses 504 defined within the reflective surface 502, each arcuate recess 504 corresponding to one of the twelve (12) filament-type lower linear luminaires 402. As will be understood by those skilled in the art in light of this disclosure, the lower reflector 500 may have fewer or more arcuate recesses shown and described herein, and is still within the scope of this disclosure.

[0093] refer to Figure 8 And continue to refer to Figure 3This illustration shows a portion of a chamber device 104, including an upper heater element array 200 and an upper reflector 300, according to an example of this disclosure. It is contemplated that the chamber device 104 includes one or more pyrometers. In the illustrated example, the chamber device 104 includes a first substrate pyrometer 600 arranged along a first substrate pyrometer optical axis 618, a second substrate pyrometer 604 arranged along a second substrate pyrometer optical axis 626, a third substrate pyrometer 606 arranged along a third substrate pyrometer optical axis 634, and a chamber pyrometer 608 arranged along a chamber pyrometer optical axis 652. The optical axis 618 of the first substrate pyrometer extends from the first substrate pyrometer 600 and passes through the first substrate pyrometer aperture 620 defined in the upper reflector 300, between the first upper linear lamp 204 and the first upper linear lamp 212 in the transverse direction of the upper heater element array 200, and passes through the upper wall 152 of the chamber body 126, such that the optical axis 618 of the first substrate pyrometer intersects with the substrate support 136 in the chamber body 126 and the substrate 2 when placed on the substrate support 136. The optical axis 618 of the first substrate pyrometer may also extend longitudinally through the first lower linear lamp 404 ( Figure 6 (as shown) and the second lower linear luminaire 406 in the longitudinal direction ( Figure 6 Extending between (as shown). It is conceivable that the first substrate pyrometer 600 has a first substrate pyrometer field of view 622, which includes a radially inner portion of the upper surface 6 of the substrate 2, and / or a material layer 4 deposited thereon, the first substrate pyrometer field of view 622 being positioned along the first substrate pyrometer optical axis 618 when the substrate 2 is located on the substrate support 136.

[0094] The optical axis 618 of the first substrate pyrometer may intersect the substrate support 132 (and the substrate 2 when the substrate 2 is placed on the substrate support 136) at a radial offset 624 of the first substrate pyrometer. Figure 10 (As shown). The optical axis 618 of the first substrate pyrometer may also be substantially parallel to the axis of rotation 190, at least within the interior 150 of the chamber body 126, and when the substrate 2 is mounted on the substrate support 136, the optical axis 618 of the first substrate pyrometer is substantially orthogonal to the upper surface 6 of the substrate 2. It is conceivable that the radial offset 624 of the first substrate pyrometer may be between about 1 mm and about 50 mm, or between about 1 mm and about 40 mm, or even between about 5 mm and about 25 mm. As those skilled in the art will understand from this disclosure, the radial offset of the first substrate pyrometer within these ranges can simplify the control of the temperature of the substrate 2 and / or the material layer 4 during the deposition of the material layer 4 onto the substrate 2 using electromagnetic radiation emitted from within the field of view 622 of the first substrate pyrometer, for example by limiting (or eliminating) the need to further compensate for crosstalk between the first upper linear luminaire 204 and the second upper linear luminaire 206 laterally outside the lateral direction, for example when the power to such upper linear luminaires is independently adjusted.

[0095] The second substrate pyrometer 604 is similar to the first substrate pyrometer 600, and in this respect, the optical axis 626 of the second substrate pyrometer extends from the second substrate pyrometer 604 and passes through the second substrate pyrometer aperture 628 defined in the upper reflector 300, between the first upper linear lamp 204 and the first upper linear lamp 212 in the transverse direction of the upper heater element array 200, and passes through the upper wall 152 of the chamber body 126, so as to intersect the substrate support 136 and the substrate 2 when placed on the substrate support 136 within the chamber body 126. The optical axis 626 of the second substrate pyrometer may further extend longitudinally outward from the first lower linear lamp 408 ( Figure 6 As shown) and the first lower linear lamp 412 in the longitudinal middle ( Figure 6 Extending between (as shown). It is conceivable that the second substrate pyrometer 604 has a second substrate pyrometer field of view 630. It is also conceivable that the second substrate pyrometer field of view 630 further includes a radially outer portion of the upper surface 6 of the substrate 2, and / or a material layer 4 deposited thereon, positioned along the second substrate pyrometer optical axis 626 and radially outward relative to the first substrate pyrometer field of view 622 when the substrate 2 is located on the substrate support 136.

[0096] It is conceivable that the optical axis 626 of the second substrate pyrometer intersects the substrate support 136 and the substrate 2 when mounted on the substrate support 136 at a radial offset 632 of the second substrate pyrometer. The optical axis 626 of the second substrate pyrometer may also be substantially parallel to the axis of rotation 190, at least within the interior 150 of the chamber body 126. When the substrate 2 is located on the substrate support 136, the optical axis 626 of the second substrate pyrometer may further be substantially orthogonal relative to the upper surface 6 of the substrate 2. It is conceivable that the radial offset 632 of the second substrate pyrometer may be between approximately 100 mm and approximately 150 mm, or between approximately 120 mm and approximately 150 mm, or even between approximately 130 mm and approximately 140 mm. As those skilled in the art will understand from this disclosure, the radial offset of the second substrate pyrometer within these ranges can simplify the control of the temperature of the substrate 2 and / or material layer 4 during the deposition of material layer 4 onto the substrate 2 using electromagnetic radiation emitted from within the field of view 630 of the second substrate pyrometer by the substrate 2 and / or material layer 4, for example by enabling the controller 108 to compensate for the first substrate temperature measurement 602 using a common offset. Figure 11 (as shown) and second substrate temperature measurement 610 ( Figure 11 (As shown), to compensate for crosstalk when the power of either (or both) of the first upper linear luminaire 204 and the second upper linear luminaire 206 in the lateral direction is adjusted.

[0097] The third substrate pyrometer 606 can also be similar to the first substrate pyrometer 600, and is further arranged along the third substrate pyrometer optical axis 634. The third substrate pyrometer optical axis 634 can extend from the third substrate pyrometer 606 and pass through the third substrate pyrometer aperture 636 defined in the upper reflector 300, between the first upper linear lamp 212 and the first upper linear lamp 208 in the transverse middle of the upper heater element array 200, and through the upper wall 152 of the chamber body 126, so as to intersect with the substrate support 136 and the substrate 2 when placed on the substrate support 136 within the chamber body 126. It is further conceivable that the third substrate pyrometer optical axis 634 is in the longitudinal direction of the first lower linear lamp 404 ( Figure 6 (as shown) and the second lower linear luminaire 406 in the longitudinal direction ( Figure 6 The third substrate pyrometer 606 extends between the first substrate pyrometer field of view 638 and the second substrate pyrometer field of view 638. The third substrate pyrometer field of view 638 may further include a radially intermediate portion of the upper surface 6 of the substrate 2 (and / or the material layer 4 deposited thereon) positioned along the third substrate pyrometer optical axis 634, which is radially intermediate between the first substrate pyrometer field of view 622 and the second substrate pyrometer field of view 630 when the substrate 2 is located on the substrate support 136.

[0098] It can be envisioned that the optical axis 634 of the third substrate pyrometer is radially offset by 640° in the third substrate pyrometer. Figure 10 The third substrate pyrometer optical axis 634 intersects with the substrate support 136 and the substrate 2 when mounted on the substrate support 136 at the location shown. The optical axis 634 of the third substrate pyrometer may be substantially parallel to the axis of rotation 190 at least within the interior 150 of the chamber body 126, and substantially orthogonal to the upper surface 6 of the substrate 2 when the substrate 2 is mounted on the substrate support 136. In some examples of this disclosure, the radial offset 640 of the third substrate pyrometer may be between about 90 mm and about 160 mm, or between about 90 mm and about 140 mm, or even between about 90 mm and about 110 mm. As those skilled in the art will understand from this disclosure, radial offset of the third substrate pyrometer within these ranges can simplify the control of the temperature of the substrate 2 and / or material layer 4 during the deposition of material layer 4 onto the substrate 2 using electromagnetic radiation emitted from within the field of view 638 of the third substrate pyrometer by the substrate 2 and / or material layer 4, for example by limiting (or eliminating) the need to compensate for crosstalk between upper linear luminaires laterally offset from the lateral intermediate first upper linear luminaire 212, for example when the power to such upper linear luminaires is independently adjusted.

[0099] It is conceivable that the chamber pyrometer 608 is configured to use electromagnetic radiation emitted by the upper wall 152 of the chamber body 126 to obtain the chamber body temperature measurement 644. Figure 11(As shown). In this respect, it is conceivable that the chamber pyrometer 608 is arranged along the optical axis 652 of the chamber pyrometer and optically coupled to the upper wall of the chamber body 126. In another respect, it is also conceivable that the chamber pyrometer 608 is configured to be connected to the controller 108 ( Figure 1 (As shown) In the communication, the chamber pyrometer optical axis 652 extends laterally between the first upper linear lamp 204 and the second upper linear lamp 206, and the rotation axis 190 separates the chamber pyrometer optical axis 652 from the first substrate pyrometer optical axis 618. As those skilled in the art will understand from this disclosure, this can further simplify the chamber device 104, for example by enabling linear lamp adjustment crosstalk compensation, which is used to offset the first substrate temperature measurement 602 ( Figure 11 (As shown), to compensate for the chamber body temperature measurement 644 obtained using the chamber pyrometer 608.

[0100] refer to Figure 11 The diagram illustrates a controller 108 according to an example of this disclosure. It is contemplated that the controller 108 operatively connects a first substrate pyrometer 600 to the upper heater element array 200 and the lower heater element array 400, for example via a power supply 642, which includes a silicon controlled rectifier (SCR) device 648 having a plurality of SCRs that can be distributed to the heater elements of the upper heater element array 200 and the lower heater element array 400 respectively using the first substrate temperature measurement 602. The controller 108 may also connect a second substrate pyrometer 604 and a third substrate pyrometer 606 to the upper heater element array 200 and / or the lower heater element array 400, for example also via the power supply 642, the second substrate temperature measurement 610, and / or the third substrate temperature measurement 612. Further, it is contemplated that the controller 108 may operatively connect a chamber pyrometer 608 to a chamber coolant source 198, for example using the chamber body 126 obtained by the chamber pyrometer 608. Figure 3 The chamber body temperature measurement 644 (shown) is operatively connected via a wired or wireless link 114, which communicatively connects one or more of the aforementioned pyrometers to the controller 108, and communicatively connects the power supply 642 to the controller 108. Operable connection is also possible via a power bus 646, which electrically connects the upper heater element array 200 and the lower heater element array 400, as well as the chamber coolant source 198, to the power supply 642.

[0101] In the illustrated example, controller 108 includes device interface 101, processor 103, user interface 105, and memory 107. Device interface 101 connects processor 103 to room device 104 via wired or wireless link 114. Processor 103 is operatively connected to user interface 105, for example, to receive user input and / or provide user output, and is configured to communicate with memory 107. Memory 107 includes a non-transitory machine-readable medium on which a plurality of program modules 109 are recorded, which, when read by processor 103, cause processor 103 to perform certain operations. The operation of material layer deposition method 700 is one such operation. Figure 12 As shown (as will be described). Although shown and described herein, it should be understood and recognized that controller 108 may include other elements and / or exclude elements shown and described herein, or may have different arrangements in other examples and still remain within the scope of this disclosure.

[0102] refer to Figure 12-15 This illustrates a material layer deposition method 700. For example... Figure 12 As shown, method 700 includes placing a substrate on a substrate support, the substrate support being arranged within a chamber body and supported therein to rotate about a rotation axis, such as substrate support 136. Figure 3 As shown) arranged in the main body of room 126 ( Figure 3 (as shown) and is supported around the axis of rotation 190 ( Figure 3 As shown in box 702, the method 700 also includes rotating a substrate support on which the substrate is disposed about a rotation axis, and using an upper heater element array and a lower heater element array (e.g., upper heater element array 200) supported above and below the chamber body. Figure 3 (as shown) and lower heater element array 400 ( Figure 3 As shown in boxes 704 and 706, the substrate is heated to a predetermined material layer deposition temperature. Method 700 also includes contacting the substrate with a material layer precursor, for example, via a processing fluid 10 (…). Figure 1 The material layer precursor is conveyed to the chamber body and deposited onto the substrate using the material layer precursor, as shown in boxes 708 and 710. In some examples, heating the 704 substrate and / or depositing the 708 material layer onto the substrate may include using one or more pyrometers (e.g., a first substrate pyrometer 600). Figure 3 The temperature of the substrate is controlled as shown in box 712.

[0103] It is conceivable that by making the substrate and the silicon-containing material layer precursor (e.g., silicon-containing material layer precursor 16) Figure 2The material layer is deposited by contact, as shown in box 710. It is also conceivable that the material layer can be deposited onto the substrate under ambient conditions, such that the material layer is epitaxial with one or more exposed surface portions of the substrate, as further shown in box 710. For example, an exhaust source (e.g., exhaust source 106) coupled to a chamber assembly including the chamber body can be used. Figure 1 The pressure inside the chamber is maintained at a predetermined material layer deposition pressure, which is between about 760 Torr and about 0.1 Torr, or between about 700 Torr and about 0.1 Torr, or even between about 50 Torr and about 0.1 Torr. The upper heater array and / or the lower heater element array can heat the substrate to a predetermined material layer deposition temperature, which is between about 100 degrees Celsius and about 1200 degrees Celsius, or between about 100 degrees Celsius and about 1000 degrees Celsius, or even between about 200 degrees Celsius and 600 degrees Celsius. Recordings can be made using a non-transitory machine-readable medium (e.g., controller 108). Figure 1 The memory 107 (shown) Figure 2 The instructions recorded in the multiple program modules shown above are used to control the temperature, as shown in box 712.

[0104] According to some examples, controlling the temperature of substrate 712 may include using eleven (11) upper heater element adjustment positions to regulate the trans-substrate temperature variation, the upper heater element adjustment positions being laterally distributed within the chamber body and non-uniformly spaced from each other relative to the axis of rotation, as shown in box 714. It is also conceivable that controlling the temperature of substrate 712 may include using twelve (12) lower heater element adjustment positions longitudinally distributed within the chamber body to regulate the trans-substrate temperature variation, and the temperature of the chamber body may be controlled using a pyrometer supported above the chamber body, as shown in boxes 716 and 718. In some examples of this disclosure, controlling the temperature of substrate 712 may include operably associating a plurality of filament-type upper linear lamps of the upper heater element array with a first substrate pyrometer, for example, operably associating the first upper linear lamp 204 ( Figure 4 (as shown) and the second upper linear luminaire 206 in the horizontal direction ( Figure 4 As shown in block 714, the first substrate pyrometer is associated with the 712 substrate. According to certain examples of this disclosure, controlling the temperature of the 712 substrate may include operably associating a plurality of filament-type lower linear lamps of the lower heater element array with the first substrate pyrometer, for example, operably associating the first lower linear lamp 404 (in the longitudinal direction) with the first filament-type lower linear lamp. Figure 6 (as shown) and the second lower linear luminaire 406 in the longitudinal direction ( Figure 6 (As shown) is related to the first substrate pyrometer, also as shown in box 716.

[0105] It is conceivable that controlling the temperature of the 712 substrate may also include operably correlating multiple filament-type upper linear lamps of the upper heater element array with a second substrate pyrometer, for example, operably correlating the laterally outer first upper linear lamp 208 ( Figure 4 (as shown) and the second horizontal linear luminaire 210 (as shown) Figure 4 (as shown) and the second substrate pyrometer 604 ( Figure 3 As shown in block 714, the temperature of substrate 712 may also be controlled by operably associating a plurality of filament-type lower linear lamps of the lower heater element array with a second substrate pyrometer, for example, operably associating the longitudinally outer first lower linear lamp 408 (as shown in block 714). Figure 6 (as shown) and the longitudinal outer second lower linear luminaire 410 ( Figure 6 As shown in block 716, the temperature of substrate 712 may be associated with a second substrate pyrometer. It is conceivable that, according to certain examples of this disclosure, controlling the temperature of substrate 712 may also include operably associating a plurality of filament-type upper linear lamps of the upper heater element array with a third substrate pyrometer, for example, operably associating a laterally intermediate first upper linear lamp 212 (… Figure 4 (as shown) and the second upper linear luminaire 214 in the middle of the horizontal direction ( Figure 4 (as shown) and the third substrate pyrometer 606 ( Figure 3 As shown in box 714, controlling the temperature of substrate 712 may also include operably linking multiple filament-type lower linear lamps of the lower heater element array to a third substrate pyrometer, for example, operably linking the longitudinally intermediate first lower linear lamp 412 (shown in the box 714). Figure 6 (as shown) and the longitudinal outer second lower linear luminaire 410 ( Figure 6 (As shown) is related to the third substrate pyrometer, as shown in box 716.

[0106] like Figure 13 As shown, controlling the temperature of substrate 712 using an array of upper heater elements may include operably correlating a first and a second laterally linear lamp with a first substrate pyrometer, for example, operably correlating the first laterally linear lamp 204 ( Figure 4 (as shown) and the second upper linear luminaire 206 in the horizontal direction ( Figure 4 (as shown) and the first substrate pyrometer 600 ( Figure 3 (As shown) related to, as shown in box 720. Controlling the temperature of substrate 712 may include obtaining a first substrate temperature measurement, for example, during material layer heating 706 and / or deposition 710 onto the substrate, using electromagnetic radiation emitted by the substrate and received by a first substrate pyrometer, such as first substrate temperature measurement 602 (shown). Figure 11As shown in box 722, it is conceivable that a first substrate temperature measurement is compared with a predetermined first substrate temperature value, as shown in box 724, and when the difference between the first substrate temperature measurement and the predetermined first temperature value is less than a predetermined first difference, the power applied to the first upper linear lamp in the lateral direction and the second upper linear lamp in the lateral direction remains unchanged, as shown in box 726 and arrow 728. It is also conceivable that when the difference between the first substrate temperature measurement and the predetermined first substrate temperature value is less than the predetermined first difference, the power applied to the first upper linear lamp in the lateral direction and the second upper linear lamp in the lateral direction can be adjusted, as shown in arrow 730 and box 732. It is further conceivable that one or more additional first substrate temperature measurements can then be obtained, and the aforementioned operation can be repeated (e.g., iteratively), also as shown in arrow 728 and further as shown in arrow 734.

[0107] In some examples, operably associating the first and second lateral upper linear lamps with the first substrate pyrometer 720 may include operably associating the innermost three (3) of the eleven (11) upper linear lamps of the upper heater element array with the first substrate pyrometer, as shown in box 736. According to some examples of this disclosure, operably associating the first and second lateral upper linear lamps with the first substrate pyrometer 720 may also include operably associating the first and second longitudinal lower linear lamps with the first substrate pyrometer, for example, the first longitudinal lower linear lamp 404 of the lower heater element array (…). Figure 6 (as shown) and the second lower linear luminaire 406 in the longitudinal direction ( Figure 6 As shown in Figure 736, one or more of the aforementioned upper linear lamps may be operatively associated with a first substrate pyrometer, for example, to limit trans-substrate temperature variations in a region within the substrate below the upper linear lamps, as shown in Figure 738. Monitoring the substrate temperature using the first substrate pyrometer may be achieved by transmitting the first substrate temperature measurement to a controller, performing the aforementioned comparison using the controller, and regulating the power using one or more thyristor rectifiers operatively associated with the controller, and connecting the power supply to the upper and lower linear lamps of the upper and lower heater element arrays, respectively.

[0108] like Figure 14 As shown, controlling the temperature of substrate 712 using an array of upper heater elements may include operably correlating a first laterally outer upper linear lamp and a second laterally outer upper linear lamp with a second substrate pyrometer, for example, operably correlating the first laterally outer upper linear lamp 208 ( Figure 4 (as shown) and the second horizontal linear luminaire 210 (as shown) Figure 4 (as shown) and the second substrate pyrometer 604 ( Figure 3 (As shown) related to, as shown in box 740. Controlling the temperature of substrate 712 may also include obtaining a second substrate temperature measurement using electromagnetic radiation emitted by the substrate and received by a second substrate pyrometer during heating 706 and / or depositing the material layer 710 onto the substrate, for example, second substrate temperature measurement 610 ( Figure 11 As shown in box 742. It is conceivable that the second substrate temperature measurement is compared with a predetermined second substrate temperature value, as shown in box 744, and that when the difference between the second substrate temperature measurement and the predetermined second temperature value is less than a predetermined second difference, the power applied to the lateral outward first upper linear lamp and the lateral outward second upper linear lamp remains unchanged, as shown in box 746 and arrow 748. It is also conceivable that when the difference between the second substrate temperature measurement and the predetermined second substrate temperature value is less than a predetermined second difference, the power applied to the lateral outward first upper linear lamp and the lateral outward second upper linear lamp can be adjusted, as shown in arrow 750 and box 752. It is further conceivable that during the heating 706 and / or deposition 710 of the material layer onto the substrate, one or more additional second temperature measurements are obtained and the aforementioned operation is repeated, also as shown in arrow 754 and further as shown in arrow 756.

[0109] In some examples, operably associating the lateral outer first upper linear luminaire and the lateral outer second upper linear luminaire with the second substrate pyrometer 740 may include operably associating the two lateral outermost pairs of upper linear luminaires of the upper heater element array with the second substrate pyrometer, as shown in block 758. According to some examples of this disclosure, operably associating the lateral outer first upper linear luminaire and the lateral outer second upper linear luminaire with the second substrate pyrometer 740 may also include operably associating the longitudinal outer first lower linear luminaire and the longitudinal outer second lower linear luminaire of the lower heater element array with the second substrate pyrometer, for example, the longitudinal outer first lower linear luminaire 408 of the lower heater element array (…). Figure 6 (as shown) and the longitudinal outer second lower linear luminaire 410 ( Figure 6 As shown in Figure 758, operatively, it is also conceivable that operatively relating one or more of the aforementioned linear luminaires may include operatively relating upper linear luminaires, which are operatively spaced non-uniformly relative to the axis of rotation along the diameter of the substrate, to a first substrate pyrometer to limit cross-substrate temperature variations, as shown in Figure 760. Monitoring the substrate temperature using a second substrate pyrometer may also be achieved by transmitting the second substrate temperature measurement to a controller, performing the aforementioned comparison using the controller, and regulating the power using one or more thyristor rectifiers operatively associated with the controller, and connecting the power supply to the upper and lower linear luminaires of the upper and lower heater element arrays, respectively.

[0110] like Figure 15As shown, controlling the temperature of substrate 712 using an array of upper heater elements may include operably correlating a first and a second transversely intermediate upper linear lamp with a third substrate pyrometer, such as the first transversely intermediate upper linear lamp 212. Figure 4 (as shown) and the second upper linear luminaire 214 in the middle of the horizontal direction ( Figure 4 (as shown) and the third substrate pyrometer 606 ( Figure 3 As shown in box 762. Controlling the temperature of substrate 712 may also include obtaining a third substrate temperature measurement using electromagnetic radiation emitted by the substrate and received by a third substrate pyrometer during heating substrate 706 and / or depositing a material layer 710 onto the substrate, for example, third substrate temperature measurement 612 (…). Figure 11 As shown in box 764. It is conceivable that a third substrate temperature measurement is compared with a predetermined third substrate temperature value, as shown in box 766, and when the difference between the third substrate temperature measurement and the predetermined third temperature value is less than a third predetermined difference, the power applied to the first upper linear lamp and the second upper linear lamp in the lateral middle section remains unchanged, as shown in box 768 and arrow 770. It is also conceivable that when the difference between the third substrate temperature measurement and the predetermined third substrate temperature value is less than a predetermined third difference, the power applied to the first upper linear lamp in the lateral middle section and the second upper linear lamp in the lateral outer section can be adjusted, as shown in arrow 772 and box 774. It is further conceivable that during the heating 706 of the substrate and / or the deposition 710 of the material layer onto the substrate, one or more additional third temperature measurements are obtained and the aforementioned operation is repeated, also as shown in arrow 772 and further as shown in arrow 776.

[0111] In some examples, operably associating the lateral outer first upper linear luminaire and the lateral outer second upper linear luminaire with the second substrate pyrometer 762 may include operably associating the two pairs of lateral outermost upper heater element arrays with the second substrate pyrometer, as shown in block 778. According to some examples of this disclosure, operably associating the lateral outer first upper linear luminaire and the lateral outer second upper linear luminaire with the second substrate pyrometer 740 may also include operably associating the longitudinal outer first lower linear luminaire and the longitudinal outer second lower linear luminaire of the lower heater element array with the second substrate pyrometer, for example, the longitudinal outer first lower linear luminaire 408 of the lower heater element array (…). Figure 6 (as shown) and the longitudinal outer second lower linear luminaire 410 ( Figure 6As shown in box 758. It is also conceivable that operatively relating one or more of the aforementioned linear luminaires may include operatively relating upper linear luminaires, spaced non-uniformly along the diameter of the substrate relative to the axis of rotation, to a first substrate pyrometer to limit cross-substrate temperature variations, as shown in box 780. Monitoring the substrate temperature using a second substrate pyrometer can also be achieved by transmitting the second substrate temperature measurement to a controller, performing the aforementioned comparison using the controller, and regulating power using one or more thyristor rectifiers operatively associated with the controller, and connecting the power supply to the upper and lower linear luminaires of the upper and lower heater element arrays.

[0112] refer to Figure 16 Figures I and II show the chamber device 104 for silicon and silicon-germanium material layers. Figure 1 The difference in cross-substrate material layer between the silicon material layer deposited on the supported substrate within chamber 104 and another chamber device (e.g., a chamber device excluding one or more features included in chamber 104). As shown by arrows A and B in Figure I, the cross-substrate material layer thickness variation of the silicon material layer deposited on the supported substrate within chamber 104 is approximately 40% of the cross-substrate material layer thickness variation of the silicon material layer deposited on the supported substrate within another chamber device. As shown by arrows C and D in Figure II, the cross-substrate material layer thickness variation of the silicon-germanium material layer deposited on the supported substrate within chamber 104 is also on the order of approximately 40% of the cross-substrate material layer thickness variation of the silicon-germanium material layer deposited on the supported substrate within another chamber device. Without being bound by specific operating mode theories, it is believed that through multiple filament-type linear luminaires 202 ( Figure 3 The orientation of the multiple arc-shaped recesses 322 (as shown) Figure 4 (As shown) the correspondence in quantity and arrangement of multiple filament-type upper linear luminaires 202 and the multiple filament-type upper linear luminaires 202 relative to the upper concave contour 336 ( Figure 5 One or more of the limiting shielding features shown in the diagram—and other features shown and described herein—limit cross-substrate temperature variations, thereby limiting cross-substrate material layer thickness variations within a material layer deposited on a substrate within chamber 104, rather than on a substrate in another chamber.

[0113] refer to Figure 17 The graphs I-III illustrate the tunability of transsubstrate temperature variability through variations in material layer thickness. Figure 16 As shown in Figure I, a first substrate pyrometer 600 ( Figure 3 As shown), relative to the nominal (e.g., using discrete lamp power offset tuning) material layer thickness, the thickness corresponding to the material applied to the upper heater element array 200 ( Figure 3 The first upper linear luminaire 204 (as shown) is located in the horizontal direction. Figure 4(as shown) and the second upper linear luminaire 206 in the horizontal direction ( Figure 4 The increase / decrease in power for a + / -2 degree Celsius substrate temperature change (as shown) results in a thickness change in the central region of the substrate with an increase / decrease ratio of approximately 0.6. Figure 16 As shown in Figure II, using a third substrate pyrometer 606, the thickness of the material layer corresponds to the amount applied to the upper heater element array 200 ( ). Figure 3 The first linear luminaire 212 in the middle of the horizontal direction (as shown) Figure 4 (as shown) and the second upper linear luminaire 214 in the middle of the horizontal direction ( Figure 4 The increase and decrease in power of a substrate temperature change of + / - 2 degrees Celsius (as shown) results in a thickness change in the central region of the substrate radially outward with an increase / decrease ratio of approximately 0.8, which is proportional to the thickness change in the central region of the substrate. Figure 16 As shown in Figure III, the thickness of the material layer applied to the upper heater element array 200 corresponds to the nominal material layer thickness relative to the second substrate pyrometer 604. Figure 3 The first linear luminaire 208 (shown) is located on the outer side of the horizontal axis. Figure 4 (as shown) and the second horizontal linear luminaire 210 (as shown) Figure 4 The increase and decrease in power of a substrate temperature change of + / - 2 degrees Celsius (as shown) results in a thickness change with an increase / decrease ratio of approximately 0.9 in the peripheral region of the substrate radially outward from the central region, which is also proportional to the thickness change in the central region of the substrate. As those skilled in the art will understand from this disclosure, due to the upper heater element array 200 and the upper reflector 300 ( Figure 3 The reduced trans-substrate material layer variation (as shown) corresponds to the trans-substrate material layer thickness variation, enabling the pyrometer to coordinately control the trans-substrate material layer thickness variation, and in the use of chamber device 104 ( Figure 1 As shown, during the continuous deposition of material layers onto the substrate, the average thickness from substrate to substrate will be consistent.

[0114] Continue to refer to Figure 8 And further reference Figure 9 and Figure 10 The manufacturing chamber apparatus (e.g., chamber apparatus 104) is shown. Figure 3The method 800 shown. In the illustrated example, the chamber assembly 104 further includes one or more threaded members 654 threadedly received in an XY platform 656. The XY platform 656 extends laterally outward from the upper heater element array 200 and the upper reflector 300 and may cover the first sidewall 156 and the second sidewall 158 of the chamber body 126. The XY platform 656 further extends longitudinally above the injection end 146 and the discharge end 148 of the chamber body 126 and has a central aperture 658 through which a plurality of filament-type upper linear lamps 202 suspended from the upper reflector 300 are optically coupled to the upper wall 152 of the chamber body 126. Figure 3 (As shown). It is conceivable that one or more threaded members 654 are received in one or more holes defined in the upper reflector 300, and further threadedly received in threaded holes defined in the XY platform 656. It is conceivable that the XY platform 656 is fixed relative to the chamber body 126, and the upper reflector 300 and the plurality of filament-type upper linear luminaires 202 suspended therefrom are thus tightly fitted relative to the chamber body 126 with one or more threaded members 654. It is also conceivable that when one or more threaded members 654 are released, the upper reflector 300 and the plurality of filament-type upper linear luminaires 202 can move laterally (e.g., toward or away from either the first sidewall 156 or the second sidewall 158 of the chamber body 126) and longitudinally (e.g., toward or away from either the inlet end 146 or the outlet end 148 of the chamber body 126). In the example shown, the chamber device 104 includes four (4) threaded members 654. As will be understood by those skilled in the art in light of this disclosure, chamber device 104 may include fewer or more threaded members 654.

[0115] like Figure 8 As shown, method 800 includes supporting an upper reflector having a reflective surface above a chamber body such that the reflective surface is opposite to the chamber body, wherein the reflective surface defines a first and a second transversely outward arcuate recess separated from each other by a rotation axis (e.g., upper reflector 300), as indicated by arrow 802. Figure 9 As shown, the upper reflector is subsequently shifted laterally, causing the first lateral arc-shaped recess to separate from the rotation axis through lateral offset, and the second lateral arc-shaped recess to separate from the rotation axis through lateral offset. The lateral offset of the second arc-shaped recess is not equal to that of the first arc-shaped recess, as shown by arrow 804. Figure 10As shown, the upper reflector can then be longitudinally shifted such that the injection edge of the upper reflector is longitudinally offset from the rotation axis, and the exhaust edge of the reflector body is offset from the rotation axis, the exhaust edge being longitudinally offset, which is not equal to the injection edge longitudinal offset, as indicated by arrow 806. It is conceivable that a transverse movement 806 of the upper reflector longitudinally increases the radial offset of the second pyrometer orifice defined within the upper reflector, and that a longitudinal movement of the upper reflector at least partially restores the radial offset of the second pyrometer orifice.

[0116] Although this disclosure has been provided in the context of certain embodiments and examples, those skilled in the art will understand that this disclosure extends beyond the specifically described embodiments to other alternative embodiments and / or uses of embodiments, as well as their obvious modifications and equivalents. Furthermore, while several variations of embodiments of this disclosure have been shown and described in detail, other modifications based on this disclosure will be apparent to those skilled in the art. Various combinations or sub-combinations of specific features and aspects of the embodiments are also contemplated and will still fall within the scope of this disclosure. It should be understood that various features and aspects of the disclosed embodiments can be combined or substituted with each other to form variations of embodiments of this disclosure. Therefore, it is intended that the scope of this disclosure should not be limited to the specific embodiments described above.

[0117] The headings provided herein (if any) are for convenience only and do not necessarily affect the scope or meaning of the apparatus and methods disclosed herein.

Claims

1. A chamber apparatus comprising: a chamber body having an injection end and a longitudinally opposite discharge end; a substrate support disposed within and supported for rotation about a rotation axis within the chamber body; an upper heater element array supported above the chamber body and comprising a laterally inner first upper linear lamp and a laterally inner second upper linear lamp; wherein the laterally inner first upper linear lamp is separated from the rotation axis by a first lateral separation distance, wherein the laterally inner second upper linear lamp is separated from the rotation axis by a second lateral separation distance, and wherein one of the first lateral separation distance and the second lateral separation distance is greater than the other of the first lateral separation distance and the second lateral separation distance.

2. The chamber device of claim 1, wherein, the chamber body has one or more exterior ribs extending around an exterior of the chamber body and longitudinally between the injection end and the discharge end of the chamber body.

3. The chamber device of claim 2, wherein, the laterally inner first upper linear lamp and the laterally inner second upper linear lamp are substantially normal to the one or more exterior ribs.

4. The chamber apparatus of claim 2, further comprising a lower heater element array comprising a plurality of filament-type lower linear lamps supported below the chamber body, wherein the plurality of filament-type lower linear lamps are substantially parallel to the one or more exterior ribs.

5. The chamber device of claim 1, wherein, the upper heater element array is laterally offset from the rotation axis, and wherein the upper heater element array is longitudinally offset from the rotation axis.

6. The chamber apparatus of claim 1, further comprising an upper reflector supported above the chamber body, wherein, the upper heater element array is fixed relative to the chamber body, wherein the upper reflector is supported for movement relative to the chamber body.

7. The chamber device of claim 1, wherein, the chamber body has one or more exterior ribs extending around an exterior of the chamber body and longitudinally between the injection end and the discharge end of the chamber body.

8. The chamber device of claim 7, wherein, the laterally inner first upper linear lamp and the laterally inner second upper linear lamp are substantially normal to the one or more exterior ribs.

9. The chamber apparatus of claim 7, further comprising a lower heater element array comprising a plurality of filament-type lower linear lamps supported below the chamber body, wherein the plurality of filament-type lower linear lamps are substantially parallel to the one or more exterior ribs.

10. The chamber apparatus of claim 1, further comprising a first substrate pyrometer supported above the chamber body and disposed along a first substrate pyrometer optical axis, the first substrate pyrometer optical axis intersecting the substrate support, the first substrate pyrometer optical axis further extending between the laterally inner first upper linear lamp and the laterally inner second upper linear lamp.

11. The chamber apparatus of claim 10, further comprising: a longitudinally inner first lower linear lamp supported below the chamber body; and a longitudinally inner second lower linear lamp, wherein the first substrate pyrometer optical axis extends between the longitudinally inner first lower linear lamp and the longitudinally inner second lower linear lamp.

12. The chamber apparatus of claim 10, further comprising a second substrate pyrometer supported above the chamber body and disposed along a second substrate pyrometer optical axis, the second substrate pyrometer optical axis intersecting the substrate support, the second substrate pyrometer optical axis extending between the laterally inner first upper linear lamp and the laterally inner second upper linear lamp.

13. The chamber apparatus of claim 12, further comprising: ​ a first lower linear lamp supported below the chamber body; a second lower linear lamp supported below the chamber body, the second lower linear lamp separating the first lower linear lamp from the axis of rotation; and wherein the second backing pyrometer optical axis extends between the first lower linear lamp and the second lower linear lamp.

14. The chamber apparatus of claim 10, further comprising: a third backing pyrometer supported above the chamber body and disposed along a third backing pyrometer optical axis; a first lower linear lamp supported below the chamber body; a second lower linear lamp supported below the chamber body and separated from the first lower linear lamp by the axis of rotation; wherein the third backing pyrometer optical axis separates the first lower linear lamp from the second lower linear lamp; and wherein the third backing pyrometer optical axis separates the first upper linear lamp from the second upper linear lamp.

15. The chamber device of claim 1, wherein, the chamber body includes an upper wall and upper rib portion formed from a single one-piece ceramic workpiece using subtractive manufacturing techniques, and wherein the chamber body includes a lower wall and lower rib portion formed from a single one-piece ceramic workpiece using subtractive manufacturing techniques.

16. The chamber device of claim 1, wherein, the upper heater element array includes a plurality of filament-type upper linear lamps, and wherein the chamber apparatus further comprises a lower heater element array supported below the chamber body and including a plurality of filament-type lower linear lamps, the plurality of filament-type lower linear lamps being greater than the plurality of filament-type upper linear lamps.

17. A semiconductor processing system, comprising: the chamber apparatus of claim 1, further comprising: a first backing pyrometer supported above the chamber body and disposed along a first backing pyrometer optical axis intersecting the substrate support; a second backing pyrometer supported above the chamber body and disposed along a second backing pyrometer optical axis intersecting the substrate support; a third backing pyrometer supported above the chamber body and disposed along a third backing pyrometer optical axis intersecting the substrate support; and a controller disposed in communication with the first, second, and third backing pyrometers, the controller responsive to instructions recorded on a memory to: operably couple the first backing pyrometer to three (3) laterally adjacent upper linear lamps of the upper heater element array, the upper heater element array including a first laterally inner upper linear lamp and a second laterally inner upper linear lamp; operably couple the second backing pyrometer to a first laterally outer upper linear lamp and a second laterally outer upper linear lamp of the upper heater element array; operably couple the third backing pyrometer to a second laterally middle upper linear lamp of the upper heater element array; and deposit a layer of material onto a substrate within the chamber body while controlling a temperature of the substrate during deposition of the layer of material onto the substrate using electromagnetic radiation emitted by the substrate and the layer of material received at the first, second, and third backing pyrometers.

18. The system of claim 17, wherein, The instructions cause the controller to regulate heating of the substrate using eleven (11) non-overlapping positions laterally spaced apart from one another above the substrate and between the first and second sidewalls of the chamber body.

19. The system of claim 17, wherein, The chamber apparatus further includes a lower heater element array including a plurality of filament-type lower linear lamps substantially orthogonal to the plurality of filament-type upper linear lamps of the upper heater element array, and wherein the instructions recorded on the memory further cause the controller to: operably couple the first substrate pyrometer to a longitudinally inner first lower linear lamp and a longitudinally inner second lower linear lamp of the lower heater element array; operably couple the second substrate pyrometer to a longitudinally outer first lower linear lamp and a longitudinally outer second lower linear lamp of the lower heater element array; and operably couple the third substrate pyrometer to a longitudinally middle first lower linear lamp and a longitudinally middle second lower linear lamp.

20. The system of claim 19, wherein, The instructions cause the controller to regulate heating of the substrate using twelve (12) positions longitudinally spaced apart from one another below the substrate and between the injection and exhaust ends of the chamber body.

21. A method of material layer deposition, comprising: at a chamber apparatus, the chamber apparatus including: a chamber body having an injection end and a longitudinally opposite exhaust end; a substrate support disposed within and supported for rotation about a rotational axis within the chamber body; an upper heater element array supported above the chamber body and including a laterally inner first upper linear lamp and a laterally inner second upper linear lamp, the laterally inner first upper linear lamp separated from the rotational axis by a first lateral spacing distance, the laterally inner second upper linear lamp separated from the rotational axis by a second lateral spacing distance, and one of the first and second lateral spacing distances greater than the other of the first and second lateral spacing distances, positioning a substrate on the substrate support; heating the substrate using the upper heater element array; contacting the substrate with a material layer precursor; depositing a material layer onto the substrate using the material layer precursor; wherein heating the substrate includes heating the substrate using eleven (11) filament-type upper linear heating elements offset from the rotational axis, the lateral offsets from the rotational axis not equal; and whereby a cross-substrate material layer thickness variation within the material layer deposited onto the substrate is less than a thickness variation of a material layer deposited using a chamber apparatus having filament-type upper heater elements with two or more equal lateral offsets.

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