Diamond surface metallization method and heat sink material

Abstract

The invention relates to a diamond surface metallization method and a heat sink material. The diamond surface metallization method comprises the following steps: adhering sol containing transition metal ion organic matters to the surface of diamond; carrying out aging treatment on the sol to form gel; carrying out drying treatment and sintering treatment on the gel to form a sintered product containing the transition metal oxide; carrying out reduction treatment on the transition metal oxide to form a reduction product containing a transition metal simple substance; and performing annealing treatment on the diamond attached with the reduction product to form a metal layer and a metal carbide interface layer positioned between the diamond and the metal layer. According to the method, expensive coating equipment is not needed, and the production cost is low. The reaction is carried out on the molecular level in the sol-gel process, strong chemical bonding is generated between the formed transition metal oxide and the diamond surface, the bonding force is far higher than that of a physical deposition method, and it is ensured that a metal layer is firmly attached.

Description

Technical Field

[0001] This invention relates to the field of heat dissipation materials technology, and in particular to a method for metallizing diamond surfaces and heat sink materials. Background Technology

[0002] With the rapid development of technologies such as 5G communication, high-performance computing, and high-power LEDs, chip power density has increased dramatically, making heat dissipation a key bottleneck restricting device performance and lifespan. Traditional heat dissipation materials are no longer sufficient, requiring materials with higher thermal conductivity to solve this problem. Diamond is the material with the highest thermal conductivity in nature, exceeding 1500 W / m·K, and possesses excellent electrical insulation and a coefficient of thermal expansion matching that of semiconductor materials, making it an ideal heat sink material. However, the extremely strong chemical inertness of diamond's surface makes it difficult to wet with ordinary solder or achieve electrical interconnection through wire bonding, a characteristic that severely hinders its practical application. By constructing a functionalized metal layer on the surface of diamond, it can be integrated into existing packaging systems, thereby truly realizing its superior heat dissipation potential.

[0003] The core mission of diamond heat sink surface metallization technology is to construct a metal interface on diamond that combines high adhesion strength, low thermal resistance, and excellent long-term stability. The most widely used surface metallization technology is the deposition of multilayer films such as titanium-gold or chromium-gold by magnetron sputtering or vacuum evaporation. The principle is to utilize the reaction of active metals such as titanium and chromium with carbon on the diamond surface to form a strong metal carbide layer, thereby achieving chemical bonding, and then the gold layer provides solderability and anti-oxidation protection.

[0004] However, magnetron sputtering requires a high vacuum environment, resulting in expensive equipment and complex processes. Furthermore, the adhesion between the sputtered film and the diamond substrate is weak, making it prone to detachment. Additionally, for workpieces with complex shapes, the coating uniformity is poor, failing to meet the requirements for high-quality metallization. Vacuum evaporation, on the other hand, requires ultra-high vacuum, leading to high energy consumption and low efficiency. The titanium layer is brittle and prone to cracking under thermal cycling stress, affecting long-term reliability. Moreover, it uses precious metals, making it prohibitively expensive. Summary of the Invention

[0005] Therefore, it is necessary to provide a method for metallizing diamond surfaces and a heat sink material to solve the problems of high cost and poor coating adhesion of traditional methods.

[0006] One objective of this invention is to provide a method for metallizing a diamond surface, the solution of which is as follows:

[0007] A method for metallizing a diamond surface includes the following steps:

[0008] A sol containing organic compounds with transition metal ions is attached to the surface of a diamond.

[0009] The sol is aged to form a gel;

[0010] The gel is dried and sintered to form a sintered product containing transition metal oxides.

[0011] The transition metal oxide is reduced to form a reduction product containing a transition metal element;

[0012] The diamond with the reduction product attached is annealed to form a metal layer and a metal carbide interface layer between the diamond and the metal layer.

[0013] In some embodiments, the thickness of the sol is 0.5 mm to 0.8 mm.

[0014] In some embodiments, the transition metal in the transition metal ion organic compound includes at least one of W, Mo, Cr, Ti, Zr, and V.

[0015] In some embodiments, the method further includes the following steps before the sol is applied to the surface of the diamond:

[0016] The diamond is etched to form etch pits on its surface.

[0017] In some embodiments, the etching process includes microwave plasma processing, and the process gas includes a mixture of hydrogen and inert gases.

[0018] In some embodiments, the process parameters of the microwave plasma treatment include:

[0019] The flow rate of hydrogen is 0.1 NL / min to 0.2 NL / min, the flow rate of inert gas is 0.8 NL / min to 1.0 NL / min, the power of the radio frequency power supply is 400W to 450W, the pressure is 0.5 kPa to 1.0 kPa, and the processing time is 10 min to 15 min.

[0020] In some embodiments, the sintering temperature is 300°C to 450°C.

[0021] In some embodiments, the reduction process includes passing a reducing gas through the gas at 800°C to 900°C to carry out a reduction reaction.

[0022] In some embodiments, the annealing temperature is 1000°C to 1100°C.

[0023] Another object of the present invention is to provide a heat sink material, the solution of which is as follows:

[0024] A heat sink material obtained by the diamond surface metallization method described in any of the above embodiments.

[0025] Compared with traditional methods, the above-mentioned diamond surface metallization method and heat sink material have the following advantages:

[0026] (1) This invention innovatively proposes a method for metallizing diamond surface by sol-gel method, which does not require expensive coating equipment and has low production cost.

[0027] (2) The sol-gel process reacts at the molecular level, and the resulting transition metal oxides form strong chemical bonds with the diamond surface. The bonding force is much higher than that of the physical deposition method, ensuring that the metal layer adheres firmly.

[0028] (3) The metal layer formed by the gel after sintering is dense, uniform and pore-free, with good conductivity and heat resistance, which can meet the strict requirements of high-power electronic devices for heat dissipation materials.

[0029] (4) The metal layer has good uniformity and strong adaptability, and can meet the heat dissipation requirements of products with different shapes. Attached Figure Description

[0030] Figure 1 SEM image of an untreated diamond surface;

[0031] Figure 2 This is a SEM image of the cross-section of the coating on the diamond in Example 1;

[0032] Figure 3 (a) is a SEM image of the cross-section of the diamond surface coating in Example 1, and (b) is a Cr element distribution map within the selected area in (a).

[0033] Figure 4 This is a metallographic microscope image of the bonding strength of the metal layer on the diamond in Example 1. Detailed Implementation

[0034] To facilitate understanding of the present invention, a more complete description will be given below with reference to the accompanying drawings. Preferred embodiments of the invention are shown in the drawings. However, the invention can be implemented in many different forms and is not limited to the embodiments described herein; these embodiments are provided to provide a thorough and complete understanding of the disclosure of the invention.

[0035] It should be noted that when an element is referred to as being "set on" another element, it can be directly on the other element or there may be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or there may be an intervening element. The terms "vertical," "horizontal," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only possible implementation.

[0036] In the description of this invention, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number or order of the indicated technical features.

[0037] Unless otherwise specified, all steps of this invention may be performed sequentially or randomly. For example, the method includes steps (a) and (b), indicating that the method may include steps (a) and (b) performed sequentially, or it may include steps (b) and (a) performed sequentially. For example, the method may also include step (c), indicating that step (c) may be added to the method in any order. For example, the method may include steps (a), (b), and (c), or it may include steps (a), (c), and (b), or it may include steps (c), (a), and (b), etc.

[0038] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0039] A method for metallizing a diamond surface according to an embodiment of the present invention includes the following steps:

[0040] Step S1: Apply a sol containing organic matter containing transition metal ions to the surface of the diamond.

[0041] Step S2: The sol is aged to form a gel.

[0042] Step S3 involves drying and sintering the gel to form a sintered product containing transition metal oxides.

[0043] Step S4 involves reducing the transition metal oxide to form a reduction product containing the transition metal element.

[0044] Step S5: Anneal the diamond with the reduction product attached to it to form a metal layer and a metal carbide interface layer between the diamond and the metal layer.

[0045] In some of these examples, in step S1, the sol is applied to the surface of the diamond by coating.

[0046] In some examples, in step S1, the thickness of the sol adhering to the diamond surface is 0.5 mm to 0.8 mm, specifically, for example, 0.5 mm, 0.6 mm, 0.7 mm, 0.8 mm, etc.

[0047] In some of these examples, the transition metal in the transition metal ion organic compound includes at least one of W, Mo, Cr, Ti, Zr, and V.

[0048] In some of these examples, the preparation method of transition metal ion organic compounds includes the following steps:

[0049] Using chromium nitrate [Cr(NO3)3] as the metal salt, a certain amount of chromium nitrate was weighed and dispersed in anhydrous ethanol (C2H5OH). Urea [CO(NH2)2] of the same amount as chromium ions was added to the above solution, and the mixture was stirred to obtain a homogeneous solution. Ammonia solution was slowly added dropwise while stirring until a transparent sol without precipitate was formed. Stirring was continued for 0.5 to 1 hour to form a transparent and stable sol. The prepared solution was placed in a water bath and heated to remove unreacted ammonia solution and anhydrous ethanol, resulting in a stable wet viscous sol system.

[0050] In some of these examples, the preparation method of transition metal ion organic compounds includes the following steps:

[0051] Using zirconium propoxide as a metal salt, a certain amount of zirconium propoxide was weighed and dispersed in n-propanol. Acetylacetonol and water were added to the above solution, and the mixture was stirred to carry out the reaction. The prepared solution was then placed in a water bath and heated to obtain a stable wet viscous sol system.

[0052] In step S2, transition metal ion organic compounds form a stable transparent sol system in the solution. After aging, the sol particles slowly polymerize to form a gel with a three-dimensional network structure.

[0053] In some of these examples, the method of metallizing the diamond surface before attaching the sol to the diamond surface also includes the following steps:

[0054] Step S6: Etch the diamond to form etch pits on the surface of the diamond.

[0055] In some of these examples, in step S6, the etching process includes microwave plasma processing, and the process gas includes a mixture of hydrogen and an inert gas.

[0056] More specifically, the diamond heat sink material is ultrasonically cleaned in pure water and dried, then placed in a microwave plasma device. In the vacuum chamber, a mixture of hydrogen and inert gas is introduced. Under certain pressure conditions, a radio frequency power supply is used to generate high-energy disordered microwave hydrogen plasma. The plasma bombards the surface of the diamond heat sink material to achieve an etching and roughening effect, resulting in uniformly distributed inverted pyramid-shaped etching pits on the diamond surface.

[0057] The inert gas is, for example, but not limited to, argon.

[0058] In some of these examples, the hydrogen flow rate in the microwave plasma treatment is 0.1 NL / min to 0.2 NL / min, specifically, for example, 0.1 NL / min, 0.11 NL / min, 0.12 NL / min, 0.13 NL / min, 0.14 NL / min, 0.15 NL / min, 0.16 NL / min, 0.17 NL / min, 0.18 NL / min, 0.19 NL / min, 0.2 NL / min, etc.

[0059] In some of these examples, the flow rate of the inert gas in the microwave plasma treatment is 0.8 NL / min to 1.0 NL / min, specifically, for example, 0.8 NL / min, 0.83 NL / min, 0.86 NL / min, 0.9 NL / min, 0.93 NL / min, 0.96 NL / min, 1.0 NL / min, etc.

[0060] In some examples, the radio frequency power supply in microwave plasma processing is 400W~450W, specifically 400W, 405W, 410W, 415W, 420W, 425W, 430W, 435W, 440W, 445W, 450W, etc.

[0061] In some of these examples, the pressure in the microwave plasma treatment is 0.5 kPa to 1.0 kPa, specifically for example, 0.5 kPa, 0.55 kPa, 0.6 kPa, 0.65 kPa, 0.7 kPa, 0.75 kPa, 0.8 kPa, 0.85 kPa, 0.9 kPa, 0.95 kPa, 1.0 kPa, etc.

[0062] In some of these examples, the microwave plasma treatment time is 10 min to 15 min, specifically for example, 10 min, 10.5 min, 11 min, 11.5 min, 12 min, 12.5 min, 13 min, 13.5 min, 14 min, 14.5 min, 15 min, etc.

[0063] In step S3, the gel is dried and solidified by high-temperature sintering to obtain a material with a nanostructure of transition metal oxide.

[0064] In some examples, in step S3, the drying temperature is 90℃~105℃, specifically 91℃, 93℃, 97℃, 99℃, 100℃, 102℃, 105℃, etc.; the time is 3h~5h, specifically 3h, 3.5h, 4h, 4.5h, 5h, etc. The preferred drying temperature is 95℃, and the time is 5h.

[0065] The sintering process employs a high-temperature tube furnace. Sintering is carried out under inert gas protection until no more gas is released from the horizontal tube furnace. The furnace is then shut off and cooled to room temperature under inert gas protection. The inert gases include, but are not limited to, nitrogen, argon, and helium.

[0066] In some examples, the sintering temperature in step S3 is 300℃~450℃, specifically, for example, 300℃, 310℃, 320℃, 330℃, 340℃, 350℃, 360℃, 370℃, 380℃, 390℃, 400℃, 410℃, 420℃, 430℃, 440℃, 450℃, etc. The preferred sintering temperature is 435℃.

[0067] In step S4, the transition metal oxide is reduced to a transition metal element by performing a reduction treatment.

[0068] In some examples, in step S4, the reduction process is carried out by introducing a reducing gas. The reaction temperature is 800℃~900℃, specifically, for example, 800℃, 810℃, 820℃, 830℃, 840℃, 850℃, 860℃, 870℃, 880℃, 890℃, 900℃, etc.

[0069] In step S5, through annealing, a metal carbide interface layer is formed between the diamond and the transition metal, and the surface metal can rearrange and condense into a dense metallic layer on the diamond.

[0070] In some examples, in step S5, the annealing temperature is 1000℃~1100℃, specifically, for example, 1000℃, 1010℃, 1020℃, 1030℃, 1040℃, 1050℃, 1060℃, 1070℃, 1080℃, 1090℃, 1100℃, etc.

[0071] Furthermore, the present invention also provides a heat sink material obtained by any of the methods described above.

[0072] The present invention has the following beneficial effects:

[0073] (1) This invention innovatively proposes a method for metallizing diamond surface by sol-gel method, which does not require expensive coating equipment and has low production cost.

[0074] (2) The sol-gel process reacts at the molecular level, and the resulting transition metal oxides form strong chemical bonds with the diamond surface. The bonding force is much higher than that of the physical deposition method, ensuring that the metal layer adheres firmly.

[0075] (3) The metal layer formed by the gel after sintering is dense, uniform and pore-free, with good conductivity and heat resistance, which can meet the strict requirements of high-power electronic devices for heat dissipation materials.

[0076] (4) The metal layer has good uniformity and strong adaptability, and can meet the heat dissipation requirements of products with different shapes.

[0077] The following specific embodiments further illustrate the present invention. These specific embodiments are provided to better understand the present invention, but are not intended to limit the scope of the invention and do not constitute a limitation on its content or protection.

[0078] Example 1

[0079] The diamond surface metallization method of this embodiment includes the following steps:

[0080] Step 1: Weigh 40g of chromium nitrate and disperse it in 500ml of anhydrous ethanol, then add 0.17g of urea. Stir with a magnetic stirrer, and slowly add 28% ammonia solution dropwise until a transparent sol without precipitate is formed. Continue stirring for 1 hour to form a transparent and stable sol. After stirring is complete, heat in a 60℃ water bath to obtain a stable wet viscous sol.

[0081] Step 2: The diamond heat sink is ultrasonically cleaned in pure water for 10 minutes, dried with a blower, and then placed in a microwave plasma device. After evacuating the vacuum chamber, a mixture of hydrogen and argon is introduced. The flow rate of hydrogen is 0.1 NL / min, and the flow rate of argon is 0.8 NL / min. The RF power supply is set to 420W, the pressure is controlled at 0.5~1.0 kPa, and the processing time is 10 minutes. Plasma bombardment of the diamond heat sink surface creates uniformly distributed inverted pyramid-shaped etching pits on the diamond surface.

[0082] Step 3: Coat the sol prepared in Step 1 onto the diamond surface that has been treated with microwave plasma, and control the thickness of the sol to be about 0.5 mm.

[0083] Step 4: After aging, the sol particles slowly aggregate to form a gel with a three-dimensional network structure.

[0084] Step 5: Place the gel-coated diamond in an oven and bake at 90°C for 4 hours. After cooling, transfer it to a high-temperature tube furnace, introduce nitrogen gas, and calcine at 400°C until no more gas is released, forming a transition metal oxide adhering to the diamond surface.

[0085] Step 6: Introduce hydrogen gas to raise the temperature of the tube furnace to 800°C for reduction treatment. The treatment time is 30 minutes to reduce the transition metal oxides into transition metal elements.

[0086] Step 7: Raise the temperature of the tube furnace to 1050℃, hold for 1 hour, and perform annealing treatment. After the holding period is completed, cool the furnace to room temperature to obtain the surface-metallized diamond heat sink.

[0087] Example 2

[0088] The diamond surface metallization method of this embodiment includes the following steps:

[0089] Step 1: Weigh 40g of chromium nitrate and disperse it in 500ml of anhydrous ethanol. Then add 0.17g of urea. Stir with a magnetic stirrer and slowly add 28% ammonia solution dropwise until a clear sol without precipitate is formed. Continue stirring for 1 hour to form a clear and stable sol. After stirring, heat in a 60℃ water bath to obtain a stable wet viscous sol.

[0090] Step 2: The diamond heat sink is ultrasonically cleaned in pure water for 10 minutes, dried with a blower, and then placed in a microwave plasma device. After evacuating the vacuum chamber, a mixture of hydrogen and argon is introduced. The flow rate of hydrogen is 0.1 NL / min, and the flow rate of argon is 1.0 NL / min. The RF power supply is set to 450W, the pressure is controlled at 0.5~1.0 kPa, and the processing time is 10 minutes. Plasma bombardment of the diamond heat sink surface creates uniformly distributed inverted pyramid-shaped etching pits on the diamond surface.

[0091] Step 3: Coat the sol prepared in Step 1 onto the diamond surface that has been treated with microwave plasma, and control the thickness of the sol to be about 0.8 mm.

[0092] Step 4: After aging, the sol particles slowly aggregate to form a gel with a three-dimensional network structure.

[0093] Step 5: Place the gel-coated diamond in an oven and bake at 95°C for 5 hours. After cooling, transfer it to a high-temperature tube furnace, introduce nitrogen gas, and calcine at 435°C until no more gas is released, forming a transition metal oxide adhering to the diamond surface.

[0094] Step 6: Introduce hydrogen gas to raise the temperature of the tube furnace to 900°C for reduction treatment. The treatment time is 30 minutes to reduce the transition metal oxides into transition metal elements.

[0095] Step 7: Raise the temperature of the tube furnace to 1050℃, hold for 1 hour, and perform annealing treatment. After the holding period is completed, cool the furnace to room temperature to obtain the surface-metallized diamond heat sink.

[0096] Example 3

[0097] The diamond surface metallization method of this embodiment includes the following steps:

[0098] Step 1: Weigh 50g of zirconium n-propoxide and dissolve it in 500g of n-propanol, stirring with a magnetic stirrer. Then add 100g of acetylacetonol and 125g of pure water, stirring until homogeneous and reacting for 20 hours. After the reaction is complete, heat in a 60℃ water bath to obtain a stable wet viscous sol.

[0099] Step 2: The diamond heat sink is ultrasonically cleaned in pure water for 10 minutes, dried with a blower, and then placed in a microwave plasma device. After evacuating the vacuum chamber, a mixture of hydrogen and argon is introduced. The flow rate of hydrogen is 0.1 NL / min, and the flow rate of argon is 1.0 NL / min. The RF power supply is set to 450W, the pressure is controlled at 0.5~1.0 kPa, and the processing time is 10 minutes. Plasma bombardment of the diamond heat sink surface creates uniformly distributed inverted pyramid-shaped etching pits on the diamond surface.

[0100] Step 3: Coat the sol prepared in Step 1 onto the diamond surface that has been treated with microwave plasma, and control the thickness of the sol to be about 0.8 mm.

[0101] Step 4: After aging, the sol particles slowly aggregate to form a gel with a three-dimensional network structure.

[0102] Step 5: Place the gel-coated diamond in an oven and bake at 95°C for 5 hours. After cooling, transfer it to a high-temperature tube furnace, introduce nitrogen gas, and calcine at 435°C until no more gas is released, forming a transition metal oxide adhering to the diamond surface.

[0103] Step 6: Introduce hydrogen gas to raise the temperature of the tube furnace to 900°C for reduction treatment. The treatment time is 30 minutes to reduce the transition metal oxides into transition metal elements.

[0104] Step 7: Raise the temperature of the tube furnace to 1050℃, hold for 1 hour, and perform annealing treatment. After the holding period is completed, cool the furnace to room temperature to obtain the surface-metallized diamond heat sink.

[0105] Example 4

[0106] The diamond surface metallization method of this embodiment includes the following steps:

[0107] Step 1: Weigh 50g of zirconium n-propoxide and dissolve it in 500g of n-propanol, stirring with a magnetic stirrer. Then add 100g of acetylacetonol and 125g of pure water, stirring until homogeneous and reacting for 20 hours. After the reaction is complete, heat in a 60℃ water bath to obtain a stable wet viscous sol.

[0108] Step 2: The diamond heat sink is ultrasonically cleaned in pure water for 10 minutes, dried with a blower, and then placed in a microwave plasma device. After evacuating the vacuum chamber, a mixture of hydrogen and argon is introduced. The flow rate of hydrogen is 0.1 NL / min, and the flow rate of argon is 1.0 NL / min. The RF power supply is set to 450W, the pressure is controlled at 0.5~1.0 kPa, and the processing time is 10 minutes. Plasma bombardment of the diamond heat sink surface creates uniformly distributed inverted pyramid-shaped etching pits on the diamond surface.

[0109] Step 3: Coat the sol prepared in Step 1 onto the diamond surface that has been treated with microwave plasma, and control the thickness of the sol to be about 0.8 mm.

[0110] Step 4: After aging, the sol particles slowly aggregate to form a gel with a three-dimensional network structure.

[0111] Step 5: Place the gel-coated diamond in an oven and bake at 95°C for 5 hours. After cooling, transfer it to a high-temperature tube furnace, introduce nitrogen gas, and calcine at 435°C until no more gas is released, forming a transition metal oxide adhering to the diamond surface.

[0112] Step 6: Introduce hydrogen gas to raise the temperature of the tube furnace to 800°C for reduction treatment. The treatment time is 30 minutes to reduce the transition metal oxides into transition metal elements.

[0113] Step 7: Raise the temperature of the tube furnace to 1100℃, hold for 1 hour, and perform annealing treatment. After the holding period is completed, cool the furnace to room temperature to obtain the surface-metallized diamond heat sink.

[0114] Figure 1 This shows an untreated diamond heat sink. (The image is made from...) Figure 1 It is evident that diamond has a smooth and complete surface, and its interfacial energy is relatively high, making it difficult to bond with metal surfaces.

[0115] Figure 2 A cross-sectional SEM image of the diamond coating with surface metallization completed in Example 1 is shown. Figure 2It is evident that after microwave hydrogen plasma bombardment, the diamond surface and the prepared metal layer form pits that interlock with each other, creating an interlocking effect that enhances interfacial bonding at a physical level. Simultaneously, the reducing hydrogen plasma activates the diamond surface, enhancing the adhesion of chromium metal to it; the resulting chromium metal layer has a thickness of 676 nm.

[0116] Elemental analysis was performed on the cross-section of the diamond coating in Example 1, and the results are as follows: Figure 3 As shown. By Figure 3 It is evident that the coating formed on the diamond surface by the sol-gel method is a chromium layer. During the annealing process at 1050℃, a chromium carbide layer (Cr3C2) forms between the chromium metal and the diamond, resulting in a complete and dense coating.

[0117] The metallized diamond sheet from Example 1 was subjected to a scribing adhesion test using 3M adhesive. The test results are as follows: Figure 4 As shown. By Figure 4 As can be seen, the coating did not peel off in large pieces after being vertically torn with 3M adhesive, and the edges of the scribing were straight and neat without peeling or cracking, proving that the coating and diamond had good adhesion.

[0118] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0119] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this invention patent should be determined by the appended claims.

Claims

1. A method for metallizing a diamond surface, characterized in that, Includes the following steps: A sol containing organic compounds with transition metal ions is attached to the surface of a diamond. The sol is aged to form a gel; The gel is dried and sintered to form a sintered product containing transition metal oxides. The transition metal oxide is reduced to form a reduction product containing a transition metal element; The diamond with the reduction product attached is annealed to form a metal layer and a metal carbide interface layer between the diamond and the metal layer.

2. The method for metallizing a diamond surface as described in claim 1, characterized in that, The thickness of the sol is 0.5 mm to 0.8 mm.

3. The method for metallizing a diamond surface as described in claim 1, characterized in that, The transition metal in the transition metal ion organic compound includes at least one of W, Mo, Cr, Ti, Zr, and V.

4. The method for metallizing a diamond surface as described in claim 1, characterized in that, Before the sol is attached to the surface of the diamond, the method further includes the following steps: The diamond is etched to form etch pits on its surface.

5. The method for metallizing a diamond surface as described in claim 4, characterized in that, The etching process includes microwave plasma processing, and the process gas includes a mixture of hydrogen and inert gases.

6. The method for metallizing a diamond surface as described in claim 5, characterized in that, The process parameters for the microwave plasma treatment include: The flow rate of hydrogen is 0.1 NL / min to 0.2 NL / min, the flow rate of inert gas is 0.8 NL / min to 1.0 NL / min, the power of the radio frequency power supply is 400W to 450W, the pressure is 0.5 kPa to 1.0 kPa, and the processing time is 10 min to 15 min.

7. The method for metallizing a diamond surface as described in any one of claims 1 to 6, characterized in that, The sintering temperature is 300℃~450℃.

8. The method for metallizing a diamond surface as described in any one of claims 1 to 6, characterized in that, The reduction process includes introducing a reducing gas at 800℃~900℃ to carry out a reduction reaction.

9. The method for metallizing a diamond surface as described in any one of claims 1 to 6, characterized in that, The annealing temperature is 1000℃~1100℃.

10. A heat sink material, characterized in that, Obtained by the method of any one of claims 1 to 9.

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