Glass cover plate, preparation method thereof and electronic equipment

Abstract

The invention provides a glass cover plate, a preparation method thereof and electronic equipment. The glass cover plate comprises a glass body layer; the glass comprises a glass body layer and a glass reinforcing layer, the glass reinforcing layer is connected with the glass body layer, the glass reinforcing layer comprises a plurality of ion injection parts and reinforcing parts, the ion injection parts are arranged at intervals, the reinforcing parts are arranged around the peripheries of the ion injection parts, and the reinforcing parts are connected with the ion injection parts respectively. The glass cover plate provided by the invention has relatively high impact strength.

Description

Technical Field

[0001] This application relates to the field of electronics, specifically to a glass cover, its preparation method, and an electronic device. Background Technology

[0002] Glass, due to its excellent mechanical properties and optical transparency, is widely used in electronic products such as electronic displays, touch devices, and camera lenses. With the continuous development of electronic products, the requirements for glass's crack resistance, abrasion resistance, and impact resistance are also increasing. However, the glass in related technologies is relatively brittle and has low impact resistance. Summary of the Invention

[0003] This application provides a glass cover plate with high impact resistance.

[0004] A first aspect of this application provides a glass cover plate, the glass cover plate comprising:

[0005] Glass body layer; and

[0006] A glass strengthening layer is connected to the glass body layer. The glass strengthening layer includes a plurality of ion implantation portions and strengthening portions. The plurality of ion implantation portions are spaced apart. The strengthening portions are arranged around the outer periphery of each ion implantation portion. The strengthening portions are respectively connected to each ion implantation portion.

[0007] A second aspect of this application provides a method for preparing a glass cover plate, comprising:

[0008] Provide glass substrates;

[0009] Ion implantation is performed on a localized area of ​​the glass substrate; and

[0010] The glass substrate is chemically strengthened to obtain a glass cover plate. The glass cover plate includes a connected glass body layer and a glass strengthening layer. The glass strengthening layer includes a plurality of ion implantation portions and strengthening portions. The plurality of ion implantation portions are spaced apart. The strengthening portions are arranged around the outer periphery of each ion implantation portion. The strengthening portions are respectively connected to each ion implantation portion.

[0011] A third aspect of this application provides an electronic device comprising:

[0012] Display screen;

[0013] The glass cover plate described in the first aspect of this application or the glass cover plate prepared by the method described in the second aspect of this application; and

[0014] A processor, electrically connected to the display screen, is used to control the display screen to perform a display.

[0015] The glass cover plate of this application embodiment includes a glass body layer and a glass strengthening layer. The glass strengthening layer includes multiple ion implantation portions and strengthening portions. The multiple ion implantation portions are spaced apart, and the strengthening portions are arranged around the outer periphery of each ion implantation portion. The strengthening portions are respectively connected to each ion implantation portion. The glass strengthening layer can form a compressive stress layer on the surface of the glass cover plate, thereby giving the glass cover plate high mechanical strength. Through the cooperation of the ion implantation portions and the strengthening portions, the glass strengthening layer forms an arch-shaped stress distribution. The arch-shaped stress distribution structure can more effectively disperse and transfer external stress, improving the crack resistance of the glass cover plate, thereby giving the glass cover plate higher impact resistance and bending strength. In addition, the glass cover plate of this application includes ion implantation portions, thereby giving the glass cover plate better resistance to acid and alkali corrosion, and better improving the hydrolysis resistance and oxidation resistance of the glass cover plate. Attached Figure Description

[0016] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a schematic diagram of the structure of a glass cover plate according to an embodiment of this application.

[0018] Figure 2 This application describes a glass cover plate along... Figure 1 A schematic diagram of the cross-sectional structure along the AA direction.

[0019] Figure 3 This is another embodiment of the glass cover plate along the edge of the present application. Figure 1 A schematic diagram of the cross-sectional structure along the AA direction.

[0020] Figure 4 yes Figure 2 Enlarged view of the area within the dashed box I.

[0021] Figure 5 This is a schematic flowchart illustrating a method for preparing a glass cover plate according to an embodiment of this application.

[0022] Figure 6 This is a schematic diagram of the manufacturing process of a glass cover plate according to an embodiment of this application.

[0023] Figure 7 This is a schematic flowchart of a method for preparing a chemically strengthened glass substrate according to an embodiment of this application.

[0024] Figure 8This is a schematic diagram of the structure of an electronic device according to an embodiment of this application.

[0025] Figure 9 This is a partial exploded structural diagram of an electronic device according to an embodiment of this application.

[0026] Figure 10 This is a circuit block diagram of an electronic device according to an embodiment of this application.

[0027] Explanation of reference numerals in the attached figures:

[0028] 100-Glass cover, 10-Glass body layer, 20-Glass strengthening layer, 21-Ion implantation section, 22-Strengthening section, 100a-Glass substrate, 21a-Ion implantation area, 300-Electronic device, 310-Display screen, 320-Middle frame, 330-Processor, 340-Housing, 341-Light-transmitting section, 350-Memory, 370-Camera module. Detailed Implementation

[0029] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present application, and not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present application.

[0030] The terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish different objects, not to describe a specific order. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or apparatuses.

[0031] The technical solutions in the embodiments of this application will now be described with reference to the accompanying drawings.

[0032] It should be noted that, for ease of explanation, the same reference numerals denote the same components in the embodiments of this application, and for the sake of brevity, detailed descriptions of the same components are omitted in different embodiments.

[0033] Glass, due to its excellent mechanical properties and optical transparency, is widely used in electronic products such as electronic displays, touch devices, and camera lenses. With the continuous development of electronic products, the requirements for glass's crack resistance, abrasion resistance, and impact resistance are also increasing. However, the glass in related technologies is relatively brittle and has low impact resistance.

[0034] Figure 1 This is a schematic diagram of the structure of a glass cover plate 100 according to an embodiment of this application. Figure 2 The glass cover plate 100 of one embodiment of this application is along Figure 1 A schematic diagram of the cross-sectional structure along the AA direction. Figure 3 The glass cover plate 100 of another embodiment of this application is along Figure 1 A schematic diagram of the cross-sectional structure along the AA direction.

[0035] Please see Figures 1 to 3 This application provides a glass cover plate 100, which includes a glass body layer 10 and a glass strengthening layer 20. The glass strengthening layer 20 is connected to the glass body layer 10. The glass strengthening layer 20 includes a plurality of ion implantation portions 21 and strengthening portions 22. The plurality of ion implantation portions 21 are spaced apart. The strengthening portions 22 are arranged around the outer periphery of each ion implantation portion 21 and are respectively connected to each ion implantation portion 21.

[0036] The glass cover 100 of this application embodiment can be used as a protective cover for the display screen of an electronic device, a protective lens for a camera, a back cover for an electronic device, etc. Optionally, the electronic device can be, but is not limited to, a mobile phone, tablet computer, laptop computer, desktop computer, smart bracelet, smartwatch, e-reader, game console, and other portable electronic devices.

[0037] The term "multiple" refers to two or more.

[0038] Understandably, both the ion implantation section 21 and the reinforcement section 22 are made of glass.

[0039] Optionally, the glass strengthening layer 20 and the glass body layer 10 are an integral structure.

[0040] It should be noted that the glass body layer 10 and the glass strengthening layer 20 are formed from different parts of the same glass substrate. There is no fusion or welding interface between the glass body layer 10 and the glass strengthening layer 20.

[0041] It should be noted that the glass strengthening layer 20 can be located on one side of the glass body layer 10 (e.g., Figure 2 As shown), the glass strengthening layer 20 can also be located on both sides opposite to the glass body layer 10 (e.g. Figure 3(As shown). In other words, the glass cover 100 can be formed by strengthening one surface of the glass substrate (at least one of ion implantation strengthening and chemical strengthening); or, the glass cover 100 can be formed by strengthening both opposite surfaces of the glass substrate. Furthermore, the glass strengthening layer 20 can be one layer or two layers; when the glass strengthening layer 20 is two layers, the two glass strengthening layers 20 are respectively disposed on the two opposite surfaces of the glass body layer 10.

[0042] Understandably, the ion implantation section 21 is embedded in the reinforcement section 22. The reinforcement section 22 is disposed around the outer periphery of each ion implantation section 21.

[0043] Understandably, the glass body layer 10 and the glass strengthening layer 20 are stacked. A plurality of ion implantation sites 21 are spaced apart along the extending direction of the glass body layer 10.

[0044] In some embodiments, a plurality of ion implantation units 21 are arranged in an array.

[0045] The glass cover plate 100 of this embodiment includes a glass body layer 10 and a glass strengthening layer 20. The glass strengthening layer 20 includes a plurality of ion implantation portions 21 and strengthening portions 22. The plurality of ion implantation portions 21 are spaced apart, and the strengthening portions 22 are disposed around the outer periphery of each ion implantation portion 21. The strengthening portions 22 are respectively connected to each ion implantation portion 21. The glass strengthening layer 20 can form a compressive stress layer on the surface of the glass cover plate 100, thereby giving the glass cover plate 100 high mechanical strength. Through the cooperation of the ion implantation portions 21 and the strengthening portions 22, the glass strengthening layer 20 forms an arch-shaped stress distribution. The arch-shaped stress distribution structure can more effectively disperse and transfer external stress, improve the crack resistance of the glass cover plate 100, and thus give the glass cover plate 100 higher impact resistance and bending strength. Furthermore, the glass cover plate 100 of this application includes an ion implantation section 21, which enables the glass cover plate 100 to have better resistance to acid and alkali corrosion, and can better improve the hydrolysis resistance and oxidation resistance of the glass cover plate 100.

[0046] In some embodiments, the ion implantation section 21 is subjected to ion implantation treatment and chemical strengthening treatment in sequence, and the strengthening section 22 is subjected to chemical strengthening treatment.

[0047] Understandably, the ion implantation section 21 is formed by localized ion implantation of a glass substrate in the area corresponding to the ion implantation section 21. The locally ion-implanted glass substrate is then chemically strengthened in a strengthening salt bath to form a glass strengthening layer 20 on the surface of the glass substrate. The unstrengthened portions of the glass substrate form the glass body layer 10. The portions of the glass strengthening layer 20 that have undergone both ion implantation and chemical strengthening form the ion implantation section 21, while the portions that have only undergone chemical strengthening without ion implantation form the strengthening section 22.

[0048] Optionally, the implanted ions used in the ion implantation process can be, but are not limited to, aluminum ions (Al). 3+ ), nitrogen ions (N) 3- At least one of the following:

[0049] In this embodiment, a localized area of ​​the glass strengthening layer 20 undergoes ion implantation followed by chemical strengthening. Ion implantation increases the ion exchange channels during chemical strengthening, making it easier for potassium ions to enter the ion implantation portion 21 during secondary strengthening. This results in greater stress in the ion implantation portion 21, while the strengthening portion 22, which is only chemically strengthened, experiences less stress compared to the ion implantation portion 21. This creates an arch-shaped stress distribution structure between the multiple ion implantation portions 21 and the strengthening portion 22. This arch-shaped stress distribution structure more effectively disperses and transmits external stress, improving the crack resistance of the glass cover plate 100. Consequently, it further enhances the impact resistance and bending strength of the glass strengthening layer 20, and consequently, the impact resistance and bending strength of the glass cover plate 100. Furthermore, the implantation of aluminum and nitrogen ions improves the glass cover plate 100's resistance to acid and alkali corrosion, and enhances its hydrolysis and oxidation resistance.

[0050] Figure 4 yes Figure 2 Enlarged view of the area within the dashed box I.

[0051] Please see Figure 4 In some embodiments, the width w of the ion implantation section 21 is in the range of 0.5 mm ≤ w ≤ 2 mm.

[0052] Understandably, along the extending plane of the glass strengthening layer 20, the width w of the ion implantation portion 21 ranges from 0.5 mm ≤ w ≤ 2 mm. It is also understood that the width of the orthographic projection of the ion implantation portion 21 onto the surface of the glass body layer 10 facing the glass strengthening layer 20 ranges from 0.5 mm ≤ w ≤ 2 mm.

[0053] It should be noted that "the width of the ion implantation section 21" refers to the maximum width of the orthographic projection of the ion implantation section 21 onto the surface of the glass body layer 10 facing the glass strengthening layer 20.

[0054] Specifically, the width w of the ion implantation section 21 can be, but is not limited to, 0.5mm, 0.6mm, 0.7mm, 0.8mm, 0.9mm, 1.0mm, 1.1mm, 1.2mm, 1.3mm, 1.4mm, 1.5mm, 1.6mm, 1.7mm, 1.8mm, 1.9mm, 2.0mm, etc.

[0055] Optionally, the shape of the orthographic projection of the ion implantation portion 21 onto the surface of the glass body layer 10 facing the glass strengthening layer 20 can be, but is not limited to, circular, near-circular, etc. A circular ion implantation portion 21 can better form an arch-shaped structure in terms of stress distribution between the ion implantation portion 21 and the strengthening portion 22, and the stress difference in the arch-shaped structure is more uniformly distributed, giving the glass cover plate 100 better impact resistance and bending strength.

[0056] In this embodiment, if the width w of the ion implantation section 21 is too small, the arch-shaped structure formed between the ion implantation section 21 and the strengthening section 22 will be smaller, weakening the strengthening effect on the glass cover plate 100 and hindering the improvement of the impact and bending strength of the glass cover plate 100. If the width w of the ion implantation section 21 is too large, the implanted ions in the ion implantation section 21 are prone to uneven distribution, resulting in uneven stress distribution within the ion implantation section 21 and the presence of residual stress, which affects the ion exchange rate during subsequent chemical strengthening of the ion implantation section 21 and also reduces the impact strength of the glass cover plate 100. When the width w of the ion implantation section 21 is in the range of 0.5mm ≤ w ≤ 2mm, the glass strengthening layer 20 of the glass cover plate 100 can form an arch-shaped distribution structure with more uniform stress distribution and more suitable size, thereby better improving the impact and bending strength of the glass cover plate 100.

[0057] In some embodiments, the spacing d between two adjacent ion implantation sites 21 is in the range of 0.5 mm ≤ d ≤ 2 mm.

[0058] Understandably, the minimum gap d between two adjacent ion implantation units 21 is in the range of 0.5 mm ≤ d ≤ 2 mm.

[0059] Specifically, the spacing d between two adjacent ion implantation sections 21 can be, but is not limited to, 0.5mm, 0.6mm, 0.7mm, 0.8mm, 0.9mm, 1.0mm, 1.1mm, 1.2mm, 1.3mm, 1.4mm, 1.5mm, 1.6mm, 1.7mm, 1.8mm, 1.9mm, 2.0mm, etc.

[0060] It should be noted that the width w of the ion implantation section 21 and the distance d between two adjacent ion implantation sections 21 may be equal or unequal. In some embodiments, the width w of the ion implantation section 21 and the distance d between two adjacent ion implantation sections 21 are equal, and multiple ion implantation sections 21 are arranged in an array with equal spacing. In other embodiments, the width w of the ion implantation section 21 and the distance d between two adjacent ion implantation sections 21 are not equal, and multiple ion implantation sections 21 are arranged in an array with equal spacing.

[0061] In this embodiment, if the distance d between two adjacent ion implantation sections 21 is too small, the distribution area of ​​the ion implantation sections 21 will be close to the entire surface, and the area of ​​the strengthening section 22 will be too small, reducing the strengthening effect of the glass cover plate 100 and hindering the improvement of the impact resistance and bending strength of the glass cover plate 100. If the distance d between two adjacent ion implantation sections 21 is too large, the distribution density of the ion implantation sections 21 will be too small, resulting in a low distribution density of the arch-shaped structure, which also reduces the strengthening effect of the glass cover plate 100 and hinders the improvement of the impact resistance and bending strength of the glass cover plate 100. When the distance d between two adjacent ion implantation sections 21 is in the range of 0.5mm≤d≤2mm, the glass strengthening layer 20 of the glass cover plate 100 can form an arch-shaped distribution structure with a more uniform stress distribution and more suitable size, thereby better improving the impact resistance and bending strength of the glass cover plate 100.

[0062] Please see also Figure 3 and Figure 4 In some embodiments, along the stacking direction of the glass body layer 10 and the glass strengthening layer 20, the ratio h1 / h of the thickness h1 of the ion implantation portion 21 to the thickness h of the glass cover plate 100 is in the range of 0.15≤h1 / h≤0.23.

[0063] Specifically, the ratio h1 / h of the thickness h1 of the ion implantation section 21 to the thickness h of the glass cover plate 100 can be, but is not limited to, 0.15, 0.155, 0.16, 0.165, 0.17, 0.175, 0.18, 0.185, 0.19, 0.195, 0.2, 0.205, 0.21, 0.215, 0.22, 0.225, 0.23, etc.

[0064] In this embodiment, if the ratio h1 / h of the thickness h1 of the ion implantation section 21 to the thickness h of the glass cover plate 100 is too small, the ion implantation depth of the ion implantation section 21 will be too small, resulting in limited reinforcement effect on the glass cover plate 100 and hindering the improvement of the impact resistance and bending strength of the glass cover plate 100. If the ratio h1 / h of the thickness h1 of the ion implantation section 21 to the thickness h of the glass cover plate 100 is too large, the stress of the glass strengthening layer 20 will increase, and the tensile stress (also known as tensile stress) of the glass body layer 10 will increase, making the glass cover plate 100 prone to spontaneous breakage and reducing the drop performance of the glass cover plate 100 on rough ground. When the ratio h1 / h of the thickness h1 of the ion implantation portion 21 to the thickness h of the glass cover plate 100 is in the range of 0.15≤h1 / h≤0.23 along the stacking direction of the glass body layer 10 and the glass strengthening layer 20, it has a better reinforcing effect on the glass cover plate 100, which can make the glass cover plate 100 have better impact resistance and bending strength.

[0065] In some embodiments, along the stacking direction of the glass body layer 10 and the glass strengthening layer 20, the thickness h1 of the ion implantation portion 21 ranges from 90 μm ≤ h1 ≤ 120 μm.

[0066] Specifically, along the stacking direction of the glass body layer 10 and the glass strengthening layer 20, the thickness h1 of the ion implantation portion 21 can be, but is not limited to, 90μm, 92μm, 94μm, 96μm, 98μm, 100μm, 102μm, 104μm, 106μm, 108μm, 110μm, 112μm, 114μm, 116μm, 118μm, 120μm, etc.

[0067] In this embodiment, if the thickness h1 of the ion implantation portion 21 is too small along the stacking direction of the glass body layer 10 and the glass strengthening layer 20, the ion implantation depth of the ion implantation portion 21 will be too small, resulting in limited reinforcement effect on the glass cover plate 100 and hindering the improvement of the impact resistance and bending strength of the glass cover plate 100. If the thickness h1 of the ion implantation portion 21 is too large, the stress of the glass strengthening layer 20 will increase, and the tensile stress (also known as tensile stress) of the glass body layer 10 will increase, making the glass cover plate 100 prone to spontaneous breakage and reducing its drop performance on rough surfaces. In addition, if the thickness h1 of the ion implantation portion 21 is too large, higher ion implantation energy is required, increasing the difficulty of ion implantation. When the ion implantation energy is too high, microcracks are easily generated on the surface of the glass cover plate 100, which is not conducive to improving the impact resistance and bending strength of the glass cover plate 100. When the thickness h1 of the ion implantation portion 21 is in the range of 90μm≤h1≤120μm along the stacking direction of the glass body layer 10 and the glass strengthening layer 20, it has a better reinforcing effect on the glass cover plate 100, which can make the glass cover plate 100 have better impact resistance and bending strength.

[0068] Optionally, the thickness h of the glass cover 100 is in the range of 0.5mm ≤ h ≤ 0.6mm. Specifically, the thickness h of the glass cover 100 can be, but is not limited to, 0.5mm, 0.51mm, 0.52mm, 0.53mm, 0.54mm, 0.55mm, 0.56mm, 0.57mm, 0.58mm, 0.59mm, 0.6mm, etc. In this embodiment, if the thickness of the glass cover 100 is too thin, its impact resistance, tensile strength, and other properties will be reduced; if the thickness of the glass cover 100 is too thick, it will be detrimental to the thinning and lightening of electronic devices.

[0069] In some embodiments, along the stacking direction of the glass body layer 10 and the glass strengthening layer 20, the ratio h2 / h of the thickness h2 of the strengthening portion 22 to the thickness h of the glass cover plate 100 is in the range of 0.15≤h2 / h≤0.23.

[0070] Specifically, the ratio h1 / h of the thickness h2 of the reinforcing part 22 to the thickness h of the glass cover plate 100 can be, but is not limited to, 0.15, 0.155, 0.16, 0.165, 0.17, 0.175, 0.18, 0.185, 0.19, 0.195, 0.2, 0.205, 0.21, 0.215, 0.22, 0.225, 0.23, etc.

[0071] In this embodiment, if the ratio h2 / h of the thickness h2 of the reinforcing part 22 to the thickness h of the glass cover plate 100 is too small, the reinforcing depth of the glass cover plate 100 will be too small, which is not conducive to the formation of an arch-shaped stress distribution between the ion implantation part 21 and the reinforcing part 22. This will have a limited reinforcing effect on the glass cover plate 100 and will not improve the impact resistance and bending strength of the glass cover plate 100. If the ratio h2 / h of the thickness h2 of the reinforcing part 22 to the thickness h of the glass cover plate 100 is too large, the stress of the glass reinforcing layer 20 will increase, and the tensile stress (also known as tensile stress) of the glass body layer 10 will increase. This will make the glass cover plate 100 prone to spontaneous breakage and reduce the drop performance of the glass cover plate 100 on rough ground. In addition, it is not conducive to the formation of an arch-shaped stress distribution between the ion implantation part 21 and the reinforcing part 22, and will not improve the impact resistance and bending strength of the glass cover plate 100. When the ratio h2 / h of the thickness h2 of the reinforcing part 22 to the thickness h of the glass cover plate 100 is in the range of 0.15≤h2 / h≤0.23 along the stacking direction of the glass body layer 10 and the glass reinforcing layer 20, it has a better reinforcing effect on the glass cover plate 100, which can make the glass cover plate 100 have better impact resistance and bending strength.

[0072] In some embodiments, along the stacking direction of the glass body layer 10 and the glass strengthening layer 20, the thickness h2 of the strengthening portion 22 ranges from 90μm≤h2≤120μm.

[0073] Specifically, along the stacking direction of the glass body layer 10 and the glass strengthening layer 20, the thickness h2 of the strengthening portion 22 can be, but is not limited to, 90μm, 92μm, 94μm, 96μm, 98μm, 100μm, 102μm, 104μm, 106μm, 108μm, 110μm, 112μm, 114μm, 116μm, 118μm, 120μm, etc.

[0074] In this embodiment, if the thickness h2 of the reinforcing portion 22 is too small along the stacking direction of the glass body layer 10 and the glass reinforcing layer 20, the reinforcing depth of the glass cover plate 100 is too small, resulting in limited reinforcement effect and hindering the improvement of the impact resistance of the glass cover plate 100. If the thickness h2 of the reinforcing portion 22 is too large, the stress in the glass reinforcing layer 20 increases, and the tensile stress (also known as tensile stress) in the glass body layer 10 increases, making the glass cover plate 100 prone to spontaneous breakage and reducing its drop performance on rough surfaces. When the thickness h2 of the reinforcing portion 22 is in the range of 90μm≤h2≤120μm along the stacking direction of the glass body layer 10 and the glass reinforcing layer 20, it provides a better reinforcement effect for the glass cover plate 100, resulting in better impact resistance.

[0075] In some embodiments, along the stacking direction of the glass body layer 10 and the glass strengthening layer 20, the thickness h1 of the ion implantation portion 21 and the thickness h2 of the strengthening portion 22 satisfy the relationship: 0≤|h1-h2| / h1≤0.1.

[0076] Understandably, the thickness difference between the ion implantation portion 21 and the reinforcement portion 22 is within ±10%.

[0077] Specifically, |h1-h2| / h1 can be, but is not limited to, 0, 0.01, 0.02, 0.03, 0.04, 0.05, 0.06, 0.07, 0.08, 0.09, 0.1, etc.

[0078] In this embodiment, the closer |h1-h2| / h1 is to 0, the more uniform the arch-shaped stress distribution formed between the ion implantation section 21 and the strengthening section 22, resulting in a better strengthening effect on the glass cover plate 100. If |h1-h2| / h1 is too large, it affects the formation of the arch-shaped stress distribution structure between multiple ion implantation sections 21 and the strengthening section 22, thus affecting the strengthening effect on the glass cover plate 100 and reducing its impact resistance and bending strength. When 0 ≤ |h1-h2| / h1 ≤ 0.1, the glass cover plate 100 can have better impact resistance and bending strength.

[0079] Furthermore, the thickness h1 of the ion implantation section 21 and the thickness h2 of the reinforcing section 22 satisfy the relationship: 0 ≤ |h1-h2| / h1 ≤ 0.8. This allows the glass cover plate 100 to have better impact resistance and bending strength.

[0080] Furthermore, the thickness h1 of the ion implantation section 21 and the thickness h2 of the reinforcement section 22 satisfy the relationship: 0 ≤ |h1-h2| / h1 ≤ 0.5. This allows the glass cover plate 100 to have better impact resistance and bending strength.

[0081] Furthermore, the thickness h1 of the ion implantation section 21 and the thickness h2 of the reinforcement section 22 satisfy the relationship: 0≤|h1-h2| / h1≤0.3. This allows the glass cover plate 100 to have better impact resistance and bending strength.

[0082] In some embodiments, the ion implantation section 21 includes implanted ions and first strengthening ions, extending from the side of the ion implantation section 21 away from the glass body layer 10 towards the side of the ion implantation section 21 closer to the glass body layer 10, and the concentrations of both the implanted ions and the first strengthening ions in the ion implantation section 21 gradually decrease; the strengthening section 22 includes second strengthening ions, extending from the side of the strengthening section 22 away from the glass body layer 10 towards the side of the strengthening section 22 closer to the glass body layer 10, and the concentrations of both the second strengthening ions in the strengthening section 22 gradually decrease.

[0083] Understandably, in the ion implantation section 21, from the surface of the glass cover 100 towards its interior, the concentration of implanted ions gradually decreases, and the concentration of the first strengthening ions also gradually decreases. That is, the concentration of implanted ions is higher on the side away from the glass body layer 10 and lower on the side closer to the glass body layer 10; the concentration of the first strengthening ions is higher on the side away from the glass body layer 10 and lower on the side closer to the glass body layer 10.

[0084] For example, when the implanted ions are aluminum ions, the concentration of aluminum ions in the ion implantation section 21 gradually decreases in the direction from the surface of the glass cover plate 100 to the interior of the glass cover plate 100. For example, the aluminum ion implantation concentration is the highest at the surface and the aluminum ion implantation concentration is the lowest at the position where the ion implantation section 21 contacts the glass body layer 10, and the amount of aluminum ion implantation is close to 0 (it should be noted that this refers to the amount of aluminum ions implanted, not that the concentration of aluminum ions at that position is 0. Therefore, the glass substrate itself may contain aluminum ions).

[0085] Understandably, in the reinforced section 22, the concentration of the second reinforcing ions gradually decreases from the surface of the glass cover 100 towards the interior of the glass cover 100. That is, the concentration of the second reinforcing ions is higher on the side farther away from the glass body layer 10 and lower on the side closer to the glass body layer 10.

[0086] In this embodiment, by gradually increasing the number of implanted ions and first reinforcing ions from the surface to the interior of the ion implantation section 21, and gradually increasing the number of second reinforcing ions from the surface to the interior of the reinforcing section 22, the compressive stress of the glass reinforcing section 22 gradually decreases from the surface to the interior. The glass reinforcing layer 20 of the glass cover plate 100 forms a compressive stress layer, and the glass body layer 10 of the glass cover plate 100 forms a tensile stress layer. Through the cooperation of the compressive stress layer and the tensile stress layer, the glass cover plate 100 has high impact resistance and bending strength.

[0087] In some embodiments, both the first reinforcing ion and the second reinforcing ion include potassium ions (K). + ) and sodium ions (Na+ The mass fraction of potassium oxide in the ion implantation section 21 is greater than the mass fraction of potassium oxide in the reinforcement section 22; the mass fraction of sodium oxide in the ion implantation section 21 is less than the mass fraction of sodium oxide in the reinforcement section 22.

[0088] Understandably, the first reinforcing ions include potassium ions and sodium ions, and the second reinforcing ions also include potassium ions and sodium ions. Within the glass cover 100, potassium ions exist in the form of potassium oxide (K₂O), and sodium ions exist in the form of sodium oxide (Na₂O).

[0089] Optionally, the difference between the mass fraction of potassium oxide in the ion implantation section 21 and the mass fraction of potassium oxide in the reinforcement section 22 can range from 2% to 3%. Specifically, the difference between the mass fraction of potassium oxide in the ion implantation section 21 and the mass fraction of potassium oxide in the reinforcement section 22 can be, but is not limited to, 2%, 2.1%, 2.2%, 2.3%, 2.4%, 2.5%, 2.6%, 2.7%, 2.8%, 2.9%, 3%, etc. If the difference between the mass fraction of potassium oxide in the ion implantation section 21 and the mass fraction of potassium oxide in the strengthening section 22 is too small, the stress difference between the ion implantation section 21 and the strengthening section 22 will be small, making it difficult to form an arch-shaped stress difference between them, which is not conducive to increasing the impact resistance and bending strength of the glass cover plate 100. If the difference between the mass fraction of potassium oxide in the ion implantation section 21 and the mass fraction of potassium oxide in the strengthening section 22 is too large, it may be difficult to achieve in terms of process. In addition, if the stress difference between the ion implantation section 21 and the strengthening section 22 is too large, it is easy to cause stress concentration, which is also not conducive to improving the impact resistance and bending strength of the glass cover plate 100.

[0090] In the embodiments of this application, when the numerical range a to b is involved, unless otherwise specified, the numerical value can be any value between a and b, including the endpoint value a and the endpoint value b.

[0091] Optionally, the difference between the mass fraction of sodium oxide in the reinforcing section 22 and the mass fraction of sodium oxide in the ion implantation section 21 ranges from 0.7% to 1.5%. Specifically, the difference between the mass fraction of sodium oxide in the ion implantation section 21 and the mass fraction of sodium oxide in the reinforcing section 22 can be, but is not limited to, 0.7%, 0.8%, 0.9%, 1.0%, 1.1%, 1.2%, 1.3%, 1.4%, 1.5%, etc. If the difference between the mass fraction of sodium oxide in the reinforcing part 22 and the mass fraction of sodium oxide in the ion implantation part 21 is too small, the stress difference between the ion implantation part 21 and the reinforcing part 22 will be small, making it difficult to form an arch-shaped stress difference between them, which is not conducive to increasing the impact resistance and bending strength of the glass cover plate 100. If the difference between the mass fraction of sodium oxide in the reinforcing part 22 and the mass fraction of sodium oxide in the ion implantation part 21 is too large, it may be difficult to achieve in terms of process. In addition, if the stress difference between the ion implantation part 21 and the reinforcing part 22 is too large, it is easy to cause stress concentration, which is also not conducive to improving the impact resistance and bending strength of the glass cover plate 100.

[0092] In this embodiment, by making the mass fraction of potassium oxide in the ion implantation section 21 greater than that in the reinforcement section 22, and the mass fraction of sodium oxide in the ion implantation section 21 less than that in the reinforcement section 22, and by making the atomic radius of potassium ions greater than that of sodium ions, the stress in the ion implantation section 21 is greater and the stress in the reinforcement section 22 is smaller. The stress distribution forming an arch bridge structure between the ion implantation section 21 and the reinforcement section 22 results in the glass cover plate 100 having higher impact resistance and bending strength.

[0093] In some embodiments, the glass cover 100 uses aluminosilicate glass (also known as electronic aluminosilicate glass) as the glass substrate, which is obtained by first local ion implantation, and then by overall primary and secondary chemical strengthening. During the primary chemical strengthening, lithium ions in the glass substrate undergo ion replacement or ion exchange with sodium ions in the strengthening salt bath, thereby forming a compressive stress layer on the surface of the glass substrate. During the secondary chemical strengthening, sodium ions in the glass substrate undergo ion replacement or ion exchange with potassium ions in the strengthening salt bath, thereby giving the compressive stress layer formed on the surface of the glass substrate greater compressive stress, thus improving the mechanical properties of the glass cover 100.

[0094] In one specific embodiment, the ion implantation section 21 comprises, by mass fraction, 60% silicon oxide (SiO2), 20% aluminum oxide (Al2O3), 5% boron oxide (B2O3), 5% sodium oxide (Na2O), 5% lithium oxide (Li2O), 3% potassium oxide (K2O), and 2% magnesium oxide (MgO). The reinforcement section 22 comprises, by mass fraction, 65% silicon oxide (SiO2), 15% aluminum oxide (Al2O3), 6% boron oxide (B2O3), 6% sodium oxide (Na2O), 5% lithium oxide (Li2O), 1% potassium oxide (K2O), and 3% magnesium oxide (MgO).

[0095] The glass cover plate 100 of this application embodiment can be prepared by the method described in the following embodiments of this application. In addition, it can also be prepared by other methods. The preparation method of this application embodiment is only one or more preparation methods of the glass cover plate 100 of this application and should not be construed as a limitation on the glass cover plate 100 provided in the embodiments of this application.

[0096] Figure 5 This is a schematic flowchart of a method for preparing a glass cover plate 100 according to an embodiment of this application. Figure 6 This is a schematic diagram of the manufacturing process of a glass cover plate 100 according to an embodiment of this application.

[0097] Please see Figure 5 and Figure 6 This application also provides a method for preparing a glass cover plate 100, which includes:

[0098] S201, providing glass substrate 100a;

[0099] Optionally, the glass substrate 100a may be, but is not limited to, aluminosilicate glass.

[0100] Optionally, before ion implantation, the glass substrate 100a is cleaned and surface-treated to remove oil and dust from its surface, ensuring that the surface of the glass substrate 100a is free of contamination and defects.

[0101] S202, performing ion implantation treatment on a localized area of ​​the glass substrate 100a; and

[0102] Optionally, the implantation parameters of the high-energy ion implantation equipment are set according to the size and shape of the glass substrate 100a. The glass substrate 100a is then placed in the high-energy ion implantation equipment for ion implantation treatment.

[0103] Optionally, high-energy ion implantation equipment includes, but is not limited to, an ion source system, a mass analyzer, an acceleration system, a beam control system, a vacuum system, and a control system. The ion source system is responsible for ionizing impurity atoms into ions, forming an implanted ion beam, and imparting a certain kinetic energy (velocity) to the ion beam. The mass analyzer is used to separate and select ions with specific mass and energy, ensuring that the implanted ions have the desired characteristics. To enable the ions to acquire greater energy, they must pass through the high voltage of the acceleration system after exiting the mass analyzer to obtain the required velocity. The beam control system ensures that the beam scans the silicon wafer, achieving large-area ion implantation and resulting in a uniform distribution of impurity ions across the entire silicon wafer surface. The vacuum system is implemented through a vacuum pump and a closed-loop pumping system.

[0104] S203, the glass substrate 100a is chemically strengthened to obtain a glass cover plate 100. The glass cover plate 100 includes a connected glass body layer 10 and a glass strengthening layer 20. The glass strengthening layer 20 includes a plurality of ion implantation portions 21 and strengthening portions 22. The plurality of ion implantation portions 21 are spaced apart. The strengthening portions 22 are arranged around the outer periphery of each ion implantation portion 21. The strengthening portions 22 are respectively connected to each ion implantation portion 21.

[0105] Understandably, the ion-implanted area on the glass substrate 100a forms an ion-implanted portion 21 on the surface after chemical strengthening, and the non-ion-implanted area on the glass substrate 100a forms a strengthened portion 22 on the surface after chemical strengthening.

[0106] For a detailed description of other aspects of the features of the glass cover plate 100, the glass body layer 10, the glass strengthening layer 20, the ion implantation part 21, and the strengthening part 22, please refer to the description of the corresponding part of the above embodiment, which will not be repeated here.

[0107] The method for preparing the glass cover plate 100 according to this application embodiment involves first performing ion implantation on a localized area of ​​the glass substrate 100a, followed by overall chemical strengthening. During chemical strengthening, the ion-implanted area increases the ion exchange channels, making it easier for larger potassium ions to enter the ion-implanted portion 21. This results in greater stress in the ion-implanted portion 21, while the strengthened portion 22 formed in the non-ion-implanted region 21a experiences less stress. Multiple ion-implanted portions 21 are spaced apart, and strengthened portions 22 are spaced around the outer periphery of each ion-implanted portion 21, creating an arch-shaped stress distribution structure between the ion-implanted portions 21 and the strengthened portions 22. This results in the glass cover plate 100 having higher impact resistance and better bending strength. Furthermore, ion implantation enhances the glass cover plate 100's resistance to acid and alkali corrosion, and improves its hydrolysis and oxidation resistance. Furthermore, the implantation energy and dosage of ion implantation are highly controllable, allowing for more precise control of the size of the ion implantation section 21. This enables better adjustment of the impact resistance of the glass cover plate 100 and provides greater design flexibility.

[0108] In some embodiments, the glass substrate 100a has a plurality of ion implantation regions 21a spaced apart. In step S202, the ion implantation treatment performed on a localized portion of the glass substrate 100a includes:

[0109] Ion implantation is performed on the plurality of ion implantation regions 21a of the glass substrate 100a, wherein the implantation energy ranges from 40 keV to 110 keV, and the implantation dose is 0.9 × 10⁻⁶. 15 ions / cm 2 Up to 2.2×10 15 ions / cm 2 .

[0110] Specifically, the ion implantation energy can be, but is not limited to, 40keV, 45keV, 50keV, 55keV, 60keV, 65keV, 70keV, 80keV, 90keV, 100keV, and 110keV. If the ion implantation energy is too low, the implantation depth will be too shallow, or even impossible, reducing the strengthening effect of the glass cover 100 and hindering the improvement of its impact and bending strength. If the ion implantation energy is too high, it can easily damage the surface of the glass substrate 100a, making the glass cover 100 prone to microcracks and affecting its impact strength. When the ion implantation energy is in the range of 40keV to 110keV, the resulting glass cover 100 can have higher impact and bending strength.

[0111] In one specific embodiment, the implanted ions are aluminum ions, and the implantation energy is 45 keV to 55 keV. Specifically, the implantation energy can be, but is not limited to, 45 keV, 48 keV, 50 keV, 53 keV, 55 keV, etc. If the implantation energy of aluminum ions is too low, the implantation depth of aluminum ions will be too shallow, or even impossible, reducing the strengthening effect of the glass cover 100 and hindering the improvement of the impact resistance and bending strength of the glass cover 100. If the implantation energy of aluminum ions is too high, it will easily damage the surface of the glass substrate 100a, making the glass cover 100 prone to microcracks and affecting the impact resistance of the glass cover 100. When the implantation energy of aluminum ions is in the range of 45 keV to 55 keV, the resulting glass cover 100 can have higher impact resistance and bending strength.

[0112] In another specific embodiment, the implanted ions are nitrogen ions, and the implantation energy is 90 keV to 110 keV. Specifically, the implantation energy can be, but is not limited to, 90 keV, 93 keV, 95 keV, 100 keV, 103 keV, 105 keV, 108 keV, 110 keV, etc. If the nitrogen ion implantation energy is too low, the nitrogen ion implantation depth will be too shallow, or even impossible, reducing the strengthening effect of the glass cover 100 and hindering the improvement of the impact resistance and bending strength of the glass cover 100. If the nitrogen ion implantation energy is too high, it will easily damage the surface of the glass substrate 100a, making the glass cover 100 prone to microcracks and affecting the impact resistance of the glass cover 100. When the nitrogen ion implantation energy is in the range of 90 keV to 110 keV, the resulting glass cover 100 can have higher impact resistance and bending strength.

[0113] Specifically, the implantation dose of ion implantation can be, but is not limited to, 0.9 × 10⁻⁶. 15 ions / cm 2 1.0×10 15 ions / cm 2 1.1×10 15 ions / cm 2 1.2×10 15 ions / cm 2 1.3×10 15 ions / cm 2 1.4×10 15 ions / cm 2 1.5×10 15 ions / cm 2 1.6×10 15 ions / cm 2 1.7×10 15 ions / cm2 1.8×10 15 ions / cm 2 1.9×10 15 ions / cm 2 2.0×10 15 ions / cm 2 2.1×10 15 ions / cm 2 2.2×10 15 ions / cm 2 If the ion implantation dose is too small, the strengthening effect of the glass cover 100 will be reduced, which is not conducive to improving the impact strength and bending strength of the glass cover 100. If the ion implantation dose is too large, it may cause the nanoparticles in the glass cover 100 to aggregate. The aggregation of these nanoparticles may affect the nonlinear optical properties of the glass cover 100. In addition, although metal ion implantation into the glass substrate 100a can lead to the formation of surface layer nanoclusters, and the plasmon resonance of these nanoclusters can enhance the nonlinear optical properties of the glass substrate 100a, an excessively large implantation dose may cause this effect to be too strong, which may reduce the performance of the glass cover 100. When the ion implantation dose is 0.9 × 10 15 ions / cm 2 Up to 2.2×10 15 ions / cm 2 This allows the resulting glass cover plate 100 to have higher impact resistance and bending strength.

[0114] In one specific embodiment, the implanted ions are aluminum ions, and the implantation dose is 0.9 × 10⁻⁶. 15 ions / cm 2 Up to 1.1×10 15 ions / cm 2 Specifically, the injection dose can be, but is not limited to, 0.9 × 10⁻⁶. 15 ions / cm 2 0.95×10 15 ions / cm 2 1.0×10 15 ions / cm 2 1.05×10 15 ions / cm 2 1.1×10 15 ions / cm 2 1.15×10 15 ions / cm 2 1.2×10 15 ions / cm 2If the aluminum ion implantation dose is too small, the strengthening effect of the glass cover 100 will be reduced, which is not conducive to improving the impact strength and bending strength of the glass cover 100. If the aluminum ion implantation dose is too large, it may cause the nanoparticles in the glass cover 100 to aggregate. The aggregation of these nanoparticles may affect the nonlinear optical properties of the glass cover 100. In addition, although aluminum ion glass substrate 100a can lead to the formation of surface layer nanoclusters, and the plasmon resonance of these nanoclusters can enhance the nonlinear optical properties of the glass substrate 100a, an excessively large implantation dose may cause this effect to be too strong, which may reduce the performance of the glass cover 100. When the aluminum ion implantation dose is 0.9 × 10 15 ions / cm 2 Up to 1.1×10 15 ions / cm 2 This allows the resulting glass cover plate 100 to have higher impact resistance and bending strength.

[0115] In yet another specific embodiment, the implanted ion is a nitrogen ion, and the implantation dose is 1.8 × 10⁻⁶. 15 ions / cm 2 Up to 2.2×10 15 ions / cm 2 Specifically, the injection dose can be, but is not limited to, 1.8 × 10⁻⁶. 15 ions / cm 2 1.85×10 15 ions / cm 2 1.90×10 15 ions / cm 2 1.95×10 15 ions / cm 2 2.1×10 15 ions / cm 2 2.15×10 15 ions / cm 2 2.2×10 15 ions / cm 2 If the nitrogen ion implantation dose is too small, the strengthening effect of the glass cover 100 is reduced, which is not conducive to improving the impact strength and bending strength of the glass cover 100; if the nitrogen ion implantation dose is too large, the glass substrate 100a is prone to defects such as stacking faults, dislocations, and dislocation loops. Excessive density of these defects will affect the mechanical properties of the glass cover 100. When the nitrogen ion implantation dose is 1.8 × 10⁻⁶... 15 ions / cm 2 Up to 2.2×10 15 ions / cm 2This allows the resulting glass cover plate 100 to have higher impact resistance and bending strength.

[0116] Optionally, during ion implantation, the distance between the glass substrate 100a and the ion source (not shown) ranges from 20 cm to 40 cm.

[0117] Optionally, the ion source is used to generate implanted ions. In one specific embodiment, the implanted ions are aluminum ions, and the ion source is a metallic aluminum ion source.

[0118] Specifically, the distance between the glass substrate 100a and the ion source can be, but is not limited to, 20cm, 22cm, 24cm, 26cm, 28cm, 30cm, 32cm, 34cm, 36cm, 38cm, 40cm, etc. If the distance between the glass substrate 100a and the ion source is too close, the energy of the injected ions will be too high, which can easily cause microcracks on the surface of the manufactured glass cover plate 100, reducing the mechanical strength of the glass cover plate 100. If the distance between the glass substrate 100a and the ion source is too far, the energy of the injected ions will be reduced, thus reducing the reinforcing effect of the glass cover plate 100.

[0119] Figure 7 This is a schematic flowchart of a method for preparing a chemically strengthened glass substrate 100a according to an embodiment of this application.

[0120] Please see Figure 7 Optionally, in S203, the chemical strengthening treatment of the glass substrate 100a includes:

[0121] S2031, chemical strengthening is carried out once in a first salt bath at a first temperature; and

[0122] Optionally, the first temperature ranges from 400°C to 470°C. Specifically, the first temperature can be, but is not limited to, 400°C, 410°C, 420°C, 430°C, 440°C, 450°C, 460°C, 470°C, etc.

[0123] Optionally, the first salt bath may be, but is not limited to, molten sodium nitrate. In other embodiments, the first salt bath may also include potassium nitrate, i.e., the first salt bath is a mixed molten liquid of sodium nitrate and potassium nitrate.

[0124] Optionally, the duration of a single chemical fortification session can be 4 to 6 hours. Specifically, the duration of a single chemical fortification session can be, but is not limited to, 4 hours, 4.5 hours, 5 hours, 5.5 hours, 6 hours, etc.

[0125] S2032 undergoes secondary chemical strengthening in a second salt bath at a second temperature.

[0126] Optionally, the second temperature ranges from 400°C to 470°C. Specifically, the second temperature can be, but is not limited to, 400°C, 410°C, 420°C, 430°C, 440°C, 450°C, 460°C, 470°C, etc.

[0127] Optionally, the second salt bath may be, but is not limited to, molten potassium nitrate.

[0128] Optionally, the time for secondary chemical fortification is 20 to 40 minutes. Specifically, the time for primary chemical fortification can be, but is not limited to, 20 minutes, 25 minutes, 30 minutes, 35 minutes, 40 minutes, etc.

[0129] In this embodiment, during the first chemical strengthening, lithium ions in the glass substrate 100a exchange ions with sodium ions in the first salt bath, and during the second chemical strengthening, sodium ions in the glass substrate 100a exchange ions with potassium ions in the second salt bath. This forms a glass strengthening layer 20 on the surface of the glass substrate 100a, improving the mechanical strength of the glass cover 100. The two chemical strengthening processes increase the depth of ion exchange, enhance the strengthening effect, and thus further improve the mechanical strength of the glass cover 100.

[0130] The glass cover 100 of this application will be further described below through specific embodiments.

[0131] Example 1

[0132] The glass cover plate 100 in this embodiment is prepared by the following steps:

[0133] (1) An aluminosilicate glass plate is provided as a glass substrate 100a. The glass substrate 100a has a size of 20cm×20cm and a thickness of 0.6mm. The surface of the glass substrate 100a is cleaned and decontaminated. The two opposite surfaces of the glass substrate 100a each have a plurality of ion implantation regions 21a spaced apart.

[0134] (2) The glass substrate 100a was fixed on the sample stage of the high-energy ion implantation equipment, and aluminum ions were implanted into multiple ion implantation regions 21a of the glass substrate 100a. The aluminum ion implantation energy was 50 keV, and the aluminum ion implantation dose was 1.0 × 10⁻⁶. 15 ions / cm 2 ;as well as

[0135] (3) The glass substrate 100a with multiple ion implantation regions 21a is chemically strengthened once in molten sodium nitrate at 450°C for 5 hours; then it is chemically strengthened again in molten potassium nitrate at 450°C for 30 minutes; a glass cover plate 100 is obtained, wherein the ion implantation part 21 is circular with a diameter of 1 mm, the spacing between adjacent ion implantation parts 21 is 1 mm, the ratio of the thickness h1 of the ion implantation part 21 to the thickness h of the glass cover plate 100 is h1 / h = 0.18, and the ratio of the thickness h2 of the strengthening part 22 to the thickness h of the glass cover plate 100 is h2 / h = 0.18.

[0136] Example 2

[0137] The difference between this embodiment and Embodiment 1 is that the diameter of the ion implantation section 21 in this embodiment is 0.2 mm, and the spacing between adjacent ion implantation sections 21 is 0.2 mm.

[0138] Example 3

[0139] The difference between this embodiment and Embodiment 1 is that the diameter of the ion implantation section 21 in this embodiment is 0.5 mm, and the spacing between adjacent ion implantation sections 21 is 0.5 mm.

[0140] Example 4

[0141] The difference between this embodiment and Embodiment 1 is that the diameter of the ion implantation section 21 in this embodiment is 1.5 mm, and the spacing between adjacent ion implantation sections 21 is 1.5 mm.

[0142] Example 5

[0143] The difference between this embodiment and Embodiment 1 is that the diameter of the ion implantation section 21 in this embodiment is 2 mm, and the spacing between adjacent ion implantation sections 21 is 2 mm.

[0144] Example 6

[0145] The difference between this embodiment and Embodiment 1 is that the diameter of the ion implantation section 21 in this embodiment is 4 mm, and the spacing between adjacent ion implantation sections 21 is 4 mm.

[0146] Example 7

[0147] The difference between this embodiment and Embodiment 1 is that the ratio of the thickness h1 of the ion implantation section 21 to the thickness h of the glass cover plate 100 is h1 / h = 0.1, and the ratio of the thickness h2 of the strengthening section 22 to the thickness h of the glass cover plate 100 is h2 / h = 0.1.

[0148] Example 8

[0149] The difference between this embodiment and Embodiment 1 is that the ratio of the thickness h1 of the ion implantation section 21 to the thickness h of the glass cover plate 100 is h1 / h = 0.12, and the ratio of the thickness h2 of the reinforcement section 22 to the thickness h of the glass cover plate 100 is h2 / h = 0.12.

[0150] Example 9

[0151] The difference between this embodiment and Embodiment 1 is that the ratio of the thickness h1 of the ion implantation section 21 to the thickness h of the glass cover plate 100 is h1 / h = 0.15, and the ratio of the thickness h2 of the reinforcement section 22 to the thickness h of the glass cover plate 100 is h2 / h = 0.15.

[0152] Example 10

[0153] The difference between this embodiment and Embodiment 1 is that the ratio of the thickness h1 of the ion implantation section 21 to the thickness h of the glass cover plate 100 is h1 / h = 0.2, and the ratio of the thickness h2 of the strengthening section 22 to the thickness h of the glass cover plate 100 is h2 / h = 0.2.

[0154] Example 11

[0155] The difference between this embodiment and Embodiment 1 is that the ratio of the thickness h1 of the ion implantation section 21 to the thickness h of the glass cover plate 100 is h1 / h = 0.23, and the ratio of the thickness h2 of the reinforcement section 22 to the thickness h of the glass cover plate 100 is h2 / h = 0.23.

[0156] Comparative Example 1

[0157] The glass cover plate 100 of this comparative example was prepared by the following steps:

[0158] (1) Provide an aluminosilicate glass plate as a glass substrate 100a. The size of the glass substrate 100a is 20cm×20cm and the thickness of the glass substrate 100a is 0.6mm. Clean and decontaminate the surface of the glass substrate 100a.

[0159] (2) Fix the glass substrate 100a on the sample stage of the high-energy ion implantation equipment, and perform aluminum ion implantation (full-surface ion implantation) on the two opposing surfaces of the glass substrate 100a. The aluminum ion implantation energy is 50 keV, and the aluminum ion implantation dose is 1.0 × 10⁻⁶. 15 ions / cm 2 ;as well as

[0160] (3) The ion-implanted glass substrate 100a was chemically strengthened once in molten sodium nitrate at 450°C for 5 hours; then it was chemically strengthened twice in molten potassium nitrate at 450°C for 30 minutes; a glass cover plate 100 was obtained, wherein the depth of ion implantation and the depth of chemical strengthening were both 108 μm, that is, the ratio of the depth of ion implantation to the thickness of the glass cover plate 100 and the ratio of the depth of chemical strengthening to the thickness of the glass cover plate 100 were both 0.18.

[0161] Comparative Example 2

[0162] The glass cover plate 100 of this comparative example was prepared by the following steps:

[0163] (1) Provide an aluminosilicate glass plate as a glass substrate 100a. The size of the glass substrate 100a is 20cm×20cm and the thickness of the glass substrate 100a is 0.6mm. Clean and decontaminate the surface of the glass substrate 100a.

[0164] (2) The glass substrate 100a is chemically strengthened once in molten sodium nitrate at 450°C for 5 hours; then it is chemically strengthened twice in molten potassium nitrate at 450°C for 30 minutes; a glass cover plate 100 is obtained, wherein the depth of chemical strengthening is 108 μm, that is, the ratio of the depth of chemical strengthening to the thickness of the glass cover plate 100 is 0.18.

[0165] The following performance tests were performed on the above embodiments and comparative examples:

[0166] (1) Impact resistance (drop height) test: The glass cover plate 100 prepared in the above embodiment or comparative example was supported on a fixture (each of the four sides of the glass cover plate 100 is supported by a fixture 3mm high, and the middle is suspended). A stainless steel ball weighing 110g was dropped freely from a certain height onto the surface of the glass cover plate 100. The values ​​were measured at five points: the four corners and the center of the glass cover plate 100. Each point was measured five times until the glass cover plate 100 broke. The height at which the glass cover plate 100 broke is the drop height. The higher the drop height, the higher the impact resistance and the better the toughness of the glass cover plate 100, and the less likely it is to break.

[0167] (2) Bending strength test (four-point bending test, i.e., 4PB test): The four-point bending strength tester is used for testing. For glass with a thickness T>0.55mm, the upper span is 32mm and the lower span is 64mm; for glass with a thickness T≤0.55mm, the upper span is 20mm and the lower span is 40mm. The lower fixture is a contour jig wrapped with a contour silicone sleeve, and the upper fixture is a straight rod without contouring (diameter 6mm). The pressing speed is 10mm / min.

[0168] The test results of each embodiment and comparative example are shown in Table 1 below:

[0169] Table 1 Performance parameters of the glass cover plate 100 in each embodiment and comparative example

[0170]

[0171] As shown in Table 1, the test results of Examples 1 to 6 reveal that as the width of the ion implantation section 21 and the spacing between adjacent ion implantation sections 21 increase, the drop height of the glass cover plate 100 first gradually increases and then gradually decreases. This indicates that the impact resistance of the glass cover plate 100 first gradually increases and then gradually decreases. Similarly, as the width of the ion implantation section 21 and the spacing between adjacent ion implantation sections 21 increase, the impact resistance of the glass cover plate 100 also first gradually increases and then gradually decreases. When the width w of the ion implantation section 21 of the glass cover plate 100 is in the range of 0.5mm ≤ w ≤ 2mm, and the spacing d between two adjacent ion implantation sections 21 is in the range of 0.5mm ≤ d ≤ 2mm, the glass cover plate 100 can possess higher impact resistance and bending strength.

[0172] As shown in Table 1, the test results of Examples 1, 7 to 11 reveal that when the width of the ion implantation section 21 and the spacing between adjacent ion implantation sections 21 remain constant, changing the ion implantation depth and the chemical strengthening depth results in the following: as the ion implantation depth and the chemical strengthening depth increase, the drop height of the glass cover plate 100 first gradually increases and then gradually decreases; that is, the impact resistance of the glass cover plate 100 first gradually increases and then gradually decreases. Similarly, as the ion implantation depth and the chemical strengthening depth increase, the bending strength of the glass cover plate 100 also first gradually increases and then gradually decreases.

[0173] The test results of Examples 1 to 11, Comparative Examples 1 and 2 show that, compared with the scheme of full-surface ion implantation followed by chemical strengthening in Comparative Example 1 and direct chemical strengthening in Comparative Example 2, the partial ion implantation followed by chemical strengthening in Examples 1 to 11 of this application can better improve the impact resistance and bending strength of the glass cover plate 100.

[0174] The test results from Examples 1 to 11, and Comparative Examples 1 and 2 also show that, compared to the whole-surface ion implantation followed by chemical strengthening in Comparative Example 1, the drop height of the glass cover 100 in the embodiments of this application can be increased by 12% to 80%, specifically, but not limited to, 12% (Example 2), 15%, 20%, 30%, 40%, 50%, 60%, 70%, and 80% (Example 5). The bending strength of the glass cover 100 in the embodiments of this application can be increased by 10% to 76%, specifically, but not limited to, 10% (Example 2), 20%, 30%, 40%, 50%, 60%, 70%, and 76% (Example 5).

[0175] The test results from Examples 1 to 11, and Comparative Examples 1 and 2 also show that, compared to the direct chemical strengthening method in Comparative Example 2, the drop height of the glass cover plate 100 in the embodiments of this application can be increased by 27.3% to 105%, specifically, but not limited to, 27.3% (Example 2), 30%, 40%, 50%, 60%, 70%, 80%, 90%, 100%, and 105% (Example 5). The bending strength of the glass cover plate 100 in the embodiments of this application can be increased by 22.2% to 95.6%, specifically, but not limited to, 22.2% (Example 2), 30%, 40%, 50%, 60%, 70%, 80%, 90%, and 95.6% (Example 5).

[0176] Please see Figures 8 to 10 This application also provides an electronic device 300, which includes a display screen 310, a glass cover plate 100 according to this application, and a processor 330. The processor 330 is electrically connected to the display screen 310 and is used to control the display screen 310 to display.

[0177] The electronic device 300 in this application embodiment can be, but is not limited to, a mobile phone, tablet computer, laptop computer, desktop computer, smart bracelet, smartwatch, e-reader, game console, or other portable electronic device 300.

[0178] The glass cover 100 of this application embodiment can serve as a protective cover for the display screen 310 of an electronic device 300, a protective lens for a camera module, a back cover for the electronic device 300, etc. In the accompanying drawings and description of this application, the glass cover 100 is used as an example of a protective cover for the display screen of an electronic device 300 for illustration and explanation, and should not be construed as a limitation on the glass cover 100 of this application.

[0179] Optionally, when the glass cover 100 serves as a protective cover for the display screen 310, the glass cover 100 is disposed on the display surface of the display screen 310, and the processor 330 is disposed on the side of the display screen 310 away from the glass cover 100.

[0180] For a detailed description of the glass cover 100, please refer to the description of the corresponding part of the above embodiment, which will not be repeated here.

[0181] Optionally, the display screen 310 may be, but is not limited to, one or more of the following: liquid crystal display screen, light-emitting diode display screen (LED display screen), micro light-emitting diode display screen (Micro LED display screen), mini LED display screen, organic light-emitting diode display screen (OLED display screen).

[0182] Optionally, processor 330 includes one or more general-purpose processors, wherein the general-purpose processor can be any type of device capable of processing electronic instructions, including a central processing unit (CPU), microprocessor, microcontroller, main processor, controller, and ASIC, etc. Processor 330 is used to execute various types of digital storage instructions, such as software or firmware programs stored in memory, which enables the computing device to provide a wide range of services.

[0183] Optionally, the electronic device 300 of this application further includes a memory 350. The memory 350 is electrically connected to the processor 330 and is used to store the program code required for the processor 330 to run, the program code required to control the display screen 310, the display content of the display screen 310, etc.

[0184] Optionally, memory 350 may include volatile memory, such as random access memory (RAM); memory 350 may also include non-volatile memory (NVM), such as read-only memory (ROM), flash memory (FM), hard disk drive (HDD), or solid-state drive (SSD). Memory 350 may also include combinations of the above types of memory.

[0185] In some embodiments, the electronic device 300 of this application further includes a housing 340, a mid-frame 320, and a camera module 370. The mid-frame 320 is disposed between the display screen 310 and the housing 340, and the side of the mid-frame 320 is exposed between the housing 340 and the display screen 310. The mid-frame 320 and the housing 340 enclose an accommodating space (not shown), which is used to accommodate the processor 330, the memory 350, and the camera module 370. The camera module 370 is electrically connected to the processor 330 and is used to take pictures under the control of the processor 330.

[0186] Optionally, the housing 340 has a light-transmitting portion 341, through which the camera module 370 can capture images. That is, in this embodiment, the camera module 370 is a rear-facing camera module 370. It is understood that in other embodiments, the light-transmitting portion 341 may be disposed on the display screen 310, i.e., the camera module 370 is a front-facing camera module 370. In the schematic diagram of this embodiment, the light-transmitting portion 341 is shown as an opening. In other embodiments, the light-transmitting portion 341 may not be an opening, but rather a light-transmitting material, such as plastic or glass (e.g., the glass cover 100 in this embodiment).

[0187] It is understood that the electronic device 300 described in this embodiment is merely one form of the electronic device 300 used on the glass cover 100, and should not be construed as a limitation on the electronic device 300 provided in this application, nor should it be construed as a limitation on the glass cover 100 provided in various embodiments of this application.

[0188] In this application, the terms "embodiment" and "implementation" mean that a specific feature, structure, or characteristic described in connection with an embodiment can be included in at least one embodiment of this application. The appearance of these phrases in various locations throughout the specification does not necessarily refer to the same embodiment, nor are they independent or alternative embodiments mutually exclusive with other embodiments. Those skilled in the art will understand, explicitly and implicitly, that the embodiments described in this application can be combined with other embodiments. Furthermore, it should be understood that the features, structures, or characteristics described in the various embodiments of this application can be arbitrarily combined to form yet another embodiment that does not depart from the spirit and scope of the technical solution of this application, provided there is no contradiction between them.

[0189] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application and are not intended to limit it. Although this application has been described in detail with reference to the above preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions to the technical solutions of this application should not depart from the spirit and scope of the technical solutions of this application.

Claims

1. A glass cover plate, characterized in that, The glass cover includes: Glass body layer; and A glass strengthening layer is connected to the glass body layer. The glass strengthening layer includes a plurality of ion implantation portions and strengthening portions. The plurality of ion implantation portions are spaced apart. The strengthening portions are arranged around the outer periphery of each ion implantation portion. The strengthening portions are respectively connected to each ion implantation portion.

2. The glass cover plate according to claim 1, characterized in that, The width w of the ion implantation section is in the range of 0.5mm≤w≤2mm.

3. The glass cover plate according to claim 1, characterized in that, The spacing d between two adjacent ion implantation sites is in the range of 0.5 mm ≤ d ≤ 2 mm.

4. The glass cover plate according to claim 1, characterized in that, Along the stacking direction of the glass body layer and the glass strengthening layer, the ratio h1 / h of the thickness h1 of the ion implantation portion to the thickness h of the glass cover plate is in the range of 0.15≤h1 / h≤0.

23.

5. The glass cover plate according to claim 1, characterized in that, Along the stacking direction of the glass body layer and the glass strengthening layer, the thickness h1 of the ion implantation portion ranges from 90μm≤h1≤120μm.

6. The glass cover plate according to claim 1, characterized in that, Along the stacking direction of the glass body layer and the glass strengthening layer, the ratio h2 / h of the thickness h2 of the strengthening part to the thickness h of the glass cover plate is in the range of 0.15≤h2 / h≤0.

23.

7. The glass cover plate according to claim 6, characterized in that, Along the stacking direction of the glass body layer and the glass strengthening layer, the thickness h2 of the strengthening portion ranges from 90μm≤h2≤120μm.

8. The glass cover plate according to claim 1, characterized in that, Along the stacking direction of the glass body layer and the glass strengthening layer, the thickness h1 of the ion implantation portion and the thickness h2 of the strengthening portion satisfy the relationship: 0≤|h1-h2| / h1≤0.

1.

9. The glass cover plate according to claim 1, characterized in that, The ion implantation section includes implanted ions and first strengthening ions, which extend from the side of the ion implantation section away from the glass body layer to the side of the ion implantation section closer to the glass body layer. The concentrations of both the implanted ions and the first strengthening ions in the ion implantation section gradually decrease. The strengthening section includes second strengthening ions, which extend from the side of the strengthening section away from the glass body layer to the side of the strengthening section closer to the glass body layer. The concentrations of both the second strengthening ions in the strengthening section gradually decrease.

10. The glass cover plate according to claim 9, characterized in that, Both the first reinforcing ion and the second reinforcing ion include potassium ions and sodium ions. The mass fraction of potassium oxide in the ion implantation section is greater than the mass fraction of potassium oxide in the reinforcing section. The mass fraction of sodium oxide in the ion implantation section is less than the mass fraction of sodium oxide in the reinforcing section.

11. The glass cover plate according to claim 1, characterized in that, The ion implantation section is subjected to ion implantation treatment and chemical strengthening treatment in sequence, and the strengthening section is subjected to chemical strengthening treatment.

12. A method for preparing a glass cover plate, characterized in that, include: Provide glass substrates; Ion implantation is performed on a localized area of ​​the glass substrate; as well as The glass substrate is chemically strengthened to obtain a glass cover plate. The glass cover plate includes a connected glass body layer and a glass strengthening layer. The glass strengthening layer includes a plurality of ion implantation portions and strengthening portions. The plurality of ion implantation portions are spaced apart. The strengthening portions are arranged around the outer periphery of each ion implantation portion. The strengthening portions are respectively connected to each ion implantation portion.

13. The method for preparing a glass cover plate according to claim 12, characterized in that, The glass substrate has multiple ion implantation regions spaced apart, and the ion implantation treatment performed on a localized portion of the glass substrate includes: Ion implantation is performed in the plurality of ion implantation regions of the glass substrate, wherein the implantation energy ranges from 40 keV to 110 keV, and the implantation dose is 0.9 × 10⁻⁶. 15 ions / cm 2 Up to 2.2×10 15 ions / cm 2 .

14. An electronic device, characterized in that, include: Display screen; The glass cover plate according to any one of claims 1-11 or the glass cover plate according to any one of claims 12-13 is prepared by the method of preparing the glass cover plate; as well as A processor, electrically connected to the display screen, is used to control the display screen to perform a display.

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