Semiconductor process chamber and semiconductor process equipment

Abstract

The invention discloses a semiconductor process chamber and semiconductor process equipment, and belongs to the technical field of semiconductors. The semiconductor process chamber comprises a chamber body, a dielectric window and a cooling device, the dielectric window is arranged above the chamber body, the cooling device comprises a cooling chamber, the cooling chamber is arranged above the dielectric window, the cooling chamber comprises a first cooling cavity and a second cooling cavity, the first cooling cavity extends in the circumferential direction of the dielectric window, the first cooling cavity is of an annular structure, and the second cooling cavity extends in the circumferential direction of the dielectric window. The second cooling cavity is located in a central area defined by the annular structure, and cooling gas can be introduced into the first cooling cavity and the second cooling cavity so that the cooling gas can cool different areas of the dielectric window. The semiconductor process equipment comprises the semiconductor process chamber. According to the arrangement, the cooling device can cool different areas of the dielectric window at the same time, the cooling area of the dielectric window is increased, the cooling effect of the cooling device is improved, and the cooling effect of the dielectric window is improved.

Description

Technical Field

[0001] This application belongs to the field of semiconductor technology, specifically relating to a semiconductor process chamber and semiconductor process equipment. Background Technology

[0002] Semiconductor process equipment is crucial for semiconductor manufacturing. Currently, the most commonly used etching process is dry etching, also known as plasma etching. Specifically, it utilizes a high-frequency electrical signal generated by an RF power supply to create a magnetic field within the chamber of the semiconductor process equipment via a coil. Under the influence of this magnetic field, the process gas within the chamber ionizes to generate plasma. This plasma diffuses to the surface of the wafer supported by the substrate, thus etching the wafer.

[0003] Semiconductor process equipment includes a process chamber and a dielectric window located above the process chamber. The area that generates plasma is closer to the dielectric window, so the distance the plasma diffuses to the dielectric window is shorter. Most of the plasma diffuses to the dielectric window, which increases the heat of the dielectric window. Therefore, the dielectric window needs to be cooled during the process and heated during non-process processes to ensure the temperature stability of the dielectric window.

[0004] In the prior art, the cooling devices of semiconductor process equipment mainly use cooling air to dissipate heat to a local area on the upper surface of the dielectric window. As a result, the cooling effect of the cooling device is poor. Summary of the Invention

[0005] The purpose of this application is to provide a semiconductor process chamber and semiconductor process equipment, which can solve the problem of poor cooling effect of the cooling device in the related art semiconductor process equipment.

[0006] In a first aspect, embodiments of this application provide a semiconductor process chamber, including a chamber body, a dielectric window, and a cooling device, wherein the dielectric window is disposed above the chamber body. The cooling device includes a cooling chamber disposed above the medium window. The cooling chamber includes a first cooling chamber and a second cooling chamber. The first cooling chamber extends circumferentially along the medium window and has an annular structure. The second cooling chamber is located in the central area enclosed by the annular structure. Cooling gas can be introduced into both the first cooling chamber and the second cooling chamber to cool different areas of the medium window.

[0007] Secondly, embodiments of this application also provide a semiconductor process apparatus, including the semiconductor process chamber described above.

[0008] In this embodiment, both the first and second cooling chambers can be vented with cooling gas. The cooling gas in the first cooling chamber dissipates heat to the annular region of the cooling chamber, while the cooling gas in the second cooling chamber dissipates heat to the central region of the cooling chamber. The annular region and the central region correspond to different areas of the medium window, respectively. Thus, the cooling device simultaneously dissipates heat to different regions of the medium window, increasing the heat dissipation area of ​​the medium window and improving the cooling effect of both the device and the window. Attached Figure Description

[0009] Figure 1 This is a schematic diagram of the structure of a publicly disclosed cooling chamber in related technologies; Figure 2 This is a schematic diagram of the structure of the semiconductor process chamber disclosed in the embodiments of this application; Figure 3 This is a partial structural schematic diagram of the semiconductor process chamber disclosed in an embodiment of this application (excluding the second top wall); Figure 4 This is a schematic diagram of the cooling device disclosed in the embodiments of this application; Figure 5 This is a partial structural schematic diagram of the cooling device disclosed in the embodiments of this application (excluding the second top wall); Figure 6 This is a cross-sectional view of the cooling device disclosed in the embodiments of this application; Figure 7 This is a schematic diagram of the cooling chamber structure disclosed in the embodiments of this application; Figures 8-9 These are schematic diagrams of the partial structure of the cooling chamber from different perspectives (excluding the second top wall) disclosed in the embodiments of this application. Figure 10 This is a bottom view of the cooling chamber disclosed in the embodiments of this application; Figure 11 This is a top view of a partial structure of the cooling chamber disclosed in the embodiments of this application (excluding the second top wall); Figure 12 yes Figure 9 Sectional view at point AA; Figure 13 yes Figure 9 Sectional view at point BB; Figure 14 This is a diagram comparing the power output of the first and second heaters in the cooling chamber under different temperature control modes.

[0010] Explanation of reference numerals in the attached figures: 100-chamber body, 110-Media Window 200-Cooling device 210-Cooling chamber, 210a-First cooling chamber, 2101-Inner airflow channel, 2102-Outer airflow channel, 210b-Second cooling chamber 211-First top wall, 211a-First airflow inlet, 211b-Mounting groove, 212-Outer side wall, 213-Inner side wall, 213a-Air outlet channel, 213b-Second airflow inlet, 2131-First inner side wall, 2131a-First airflow outlet, 2131b-Channel outlet, 2132-Second inner side wall, 2132a-Second airflow outlet, 2133-Connecting part, 214-Second top wall, 215-First strip-shaped isolation part, 215a-Second gap, 216-Second strip-shaped isolation part, 216a-First gap, 221 - First air amplifier, 222 - Second air amplifier 231 - First heater, 232 - Second heater 241-First connecting fitting, 242-Second connecting fitting 260-Air outlet fittings 270 - Three-way control valve, 271 - Air inlet 281 - First control valve, 282 - Second control valve 300-Temperature sensing element 400-Intake pipe, 500-Jet Assembly. Detailed Implementation

[0011] The technical solutions of the embodiments of this application will be clearly described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application are within the scope of protection of this application.

[0012] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such use of data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class and the number of objects is not limited; for example, a first object can be one or more. Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0013] In related technologies, a semiconductor process chamber includes a chamber body, a dielectric window, and a cooling chamber. The dielectric window is located above the chamber body, and the cooling chamber is used to cool the dielectric window. Specifically, refer to... Figure 1 As shown, the cooling chamber has a ring-shaped structure, so it can only cool the annular area of ​​the medium window. The cooling chamber has a small coverage area, the heat dissipation area of ​​the medium window is small, and the heat dissipation effect is poor.

[0014] The cooling chamber has two first isolation sections and two second isolation sections inside. The first isolation sections are spaced apart circumferentially along the cooling chamber, and the second isolation sections are spaced apart circumferentially along the cooling chamber. Each first isolation section extends radially along the cooling chamber, and each second isolation section extends circumferentially along the cooling chamber. The first isolation sections can divide the internal space of the cooling chamber into multiple airflow spaces. Each airflow space has a second isolation section, which divides each airflow space into an outer air zone and an inner air zone. In the circumferential direction of the cooling chamber, each airflow space has an air inlet at one end and an air outlet at the other end. In this way, the airflow entering the airflow space from the air inlet is divided into two streams, which flow to the outer air zone and the inner air zone respectively. Finally, both streams flow out from the air outlet, thereby dissipating heat from the medium window.

[0015] However, with only one air inlet per airflow space, the limited number of inlets and the limited air intake result in poor heat dissipation and cooling capacity of the cooling chamber. Furthermore, the cooling chamber has two airflow spaces, and the outer and inner airflow zones of each space have significantly different circumferential lengths within the cooling chamber. Consequently, the airflow through the outer airflow zone differs from that through the inner airflow zone. During the air intake process, the airflow through the outer airflow zone is less than that through the inner airflow zone, leading to a difference in the amount of heat carried away by the inner and outer airflow zones. This results in a large temperature difference between different areas of the dielectric window, causing poor heat dissipation uniformity, which affects the plasma distribution during the process and consequently impacts the performance of the semiconductor process equipment.

[0016] Based on this, embodiments of this application provide a semiconductor process chamber and semiconductor process equipment to solve the problems of poor cooling effect and poor cooling uniformity of the above-mentioned cooling devices.

[0017] The semiconductor process chamber and semiconductor process equipment provided in this application will be described in detail below with reference to the accompanying drawings and through specific embodiments and application scenarios.

[0018] Please refer to Figures 2-13 The semiconductor process chamber disclosed in this application includes a chamber body 100, a dielectric window 110, and a cooling device 200, wherein, according to reference Figure 2As shown, the chamber body 100 is used to provide the process environment. The main components of the semiconductor process chamber are all installed on the chamber body 100. The dielectric window 110 can be a dielectric window, which can be a circular structure or a square structure, etc. The dielectric window 110 is located above the chamber body 100. The chamber body 100 and the dielectric window 110 together form a closed cavity. During the process, the closed cavity is in a vacuum state.

[0019] The cooling device 200 uses air cooling to dissipate heat from the medium window 110. (Reference) Figure 2 As shown, the cooling device 200 includes a cooling chamber 210, which is disposed above the medium window 110. (Refer to...) Figure 13 As shown, the cooling chamber 210 includes a first cooling chamber 210a and a second cooling chamber 210b. Both the first cooling chamber 210a and the second cooling chamber 210b are in a closed state. The first cooling chamber 210a extends circumferentially along the medium window 110 and has an annular structure. The second cooling chamber 210b is located in the central area enclosed by the annular structure. Optionally, the second cooling chamber 210b can be a circular structure, a square structure, etc., as long as it can be surrounded by the first cooling chamber 210a and cool the central area of ​​the medium window 110. The cooling chamber 210 can be an integral structure or a split structure, as long as it can form the first cooling chamber 210a and the second cooling chamber 210b.

[0020] Both the first cooling chamber 210a and the second cooling chamber 210b can be circulated with cooling gas to cool different areas of the medium window 110. The cooling gas can be compressed gas or other types of gas; this embodiment does not limit the specific type of cooling gas. Optionally, the first cooling chamber 210a and the second cooling chamber 210b can be circulated with the same type of cooling gas or different types of cooling gas. The first cooling chamber 210a and the second cooling chamber 210b can be circulated with cooling gas simultaneously, sufficient to dissipate heat and cool the annular region and the central region of the medium window 110 respectively.

[0021] In this embodiment, both the first cooling chamber 210a and the second cooling chamber 210b can be vented with cooling gas. The cooling gas in the first cooling chamber 210a dissipates heat to the annular region of the cooling chamber 210, while the cooling gas in the second cooling chamber 210b dissipates heat to the central region of the cooling chamber 210. The annular region and the central region correspond to different regions of the medium window 110, respectively. Thus, the cooling device 200 simultaneously dissipates heat to different regions of the medium window 110, increasing the heat dissipation area of ​​the medium window 110 and improving the cooling effect of both the cooling device 200 and the medium window 110.

[0022] In an optional embodiment, refer to Figure 11and Figure 12 As shown, the cooling chamber 210 includes an inner wall 213, which has an annular structure. The space outside the inner wall 213 forms a first cooling chamber 210a, and the space surrounded by the inner wall 213 forms a second cooling chamber 210a.

[0023] Furthermore, the inner wall 213 is provided with an air outlet channel 213a, which extends circumferentially along the inner wall 213 and communicates with the first cooling chamber 210a and the second cooling chamber 210b respectively. Optionally, the air outlet channel 213a can be directly or indirectly connected to the first cooling chamber 210a and the second cooling chamber 210b.

[0024] In this embodiment, the cooling gas in the first cooling chamber 210a and the cooling gas in the second cooling chamber 210b can both flow out through the same exhaust channel 213a, eliminating the need to separately set exhaust channels 213a for the first cooling chamber 210a and the second cooling chamber 210b, which helps to simplify the structure of the cooling chamber 210. Of course, in other embodiments, the first cooling chamber 210a and the second cooling chamber 210b can be connected to different air outlet channels, and the cooling chamber 210 can form two air outlet channels through other structures other than the inner sidewall 213.

[0025] In a further embodiment, the inner sidewall 213 includes a first inner sidewall 2131 and a second inner sidewall 2132, both of which are annular structures. The first inner sidewall 2131 is located around the second inner sidewall 2132, and the air outlet channel 213a is located between the first inner sidewall 2131 and the second inner sidewall 2132. Specifically, there is an annular space between the first inner sidewall 2131 and the second inner sidewall 2132, and the air outlet channel 213a is located within this annular space. Optionally, the air outlet channel 213a can be an annular structure, with the entire annular space directly forming the air outlet channel 213a; or, the air outlet channel 213a can also be an arc-shaped structure, with a portion of the annular space forming the air outlet channel 213a.

[0026] In this embodiment, the inner sidewall 213 is configured as a double-layer structure, that is, the air outlet channel 213a is directly formed through the first inner sidewall 2131 and the second inner sidewall 2132, eliminating the need to open a separate air outlet channel 213a, avoiding a complex channel opening structure, and helping to simplify the structure of the cooling chamber 210.

[0027] Of course, in other embodiments, the inner wall 213 may not be configured as a double-layer structure, that is, the inner wall 213 may be configured as a single-layer structure, and the inner wall 213 may directly open an air outlet channel 213a along its own circumference.

[0028] In an optional embodiment, refer to Figure 7 and Figure 10 As shown, the first inner sidewall 2131 is provided with a first airflow outlet 2131a, and the first cooling chamber 210a is connected to the air outlet channel 213a through the first airflow outlet 2131a. Optionally, the first airflow outlet 2131a can be a square outlet, a circular outlet, etc. The structure of the first airflow outlet 2131a is not limited in this embodiment. The second inner sidewall 2132 is provided with a second airflow outlet 2132a, and the second cooling chamber 210b is directly connected to the second airflow outlet 2132a. The second cooling chamber 210b is connected to the air outlet channel 213a through the second airflow outlet 2132a. Optionally, the second airflow outlet 2132a can be a square outlet, a circular outlet, etc. The structure of the second airflow outlet 2132a is not limited in this embodiment.

[0029] The first inner sidewall 2131 is also provided with a channel outlet 2131b, which communicates with the air outlet channel 213a. Optionally, the channel outlet 2131b can be a square outlet, a circular outlet, etc., and the structure of the channel outlet 2131b is not limited in this embodiment. In this way, the cooling gas in the first cooling chamber 210a flows into the air outlet channel 213a through the first air outlet 2131a, the cooling gas in the second cooling chamber 210b flows into the air outlet channel 213a through the second air outlet 2132a, and the cooling gas in the air outlet channel 213a further flows out through the channel outlet 2131b.

[0030] In one optional embodiment, the first airflow outlet 2131a and the second airflow outlet 2132a are disposed opposite each other in the circumferential direction of the inner sidewall 213.

[0031] In another embodiment, reference Figure 7 and Figure 10 As shown, the first airflow outlet 2131a and the second airflow outlet 2132a are offset in the circumferential direction of the inner sidewall 213. Optionally, there are multiple first airflow outlets 2131a and second airflow outlets 2132a. The first airflow outlets 2131a are spaced apart in the circumferential direction of the first inner sidewall 2131, and the second airflow outlets 2132a are spaced apart in the circumferential direction of the second inner sidewall 2132. Each first airflow outlet 2131a and each second airflow outlet 2132a are offset in the circumferential direction of the inner sidewall 213.

[0032] In this embodiment, because the first air outlet 2131a and the second air outlet 2132a are misaligned, the cooling gas entering the outlet channel 213a from the first air outlet 2131a in the first cooling chamber 210a can flow fully within the outlet channel 213a, and the cooling gas entering the outlet channel 213a from the second air outlet 2132a in the second cooling chamber 210b can also flow fully within the outlet channel 213a. Ultimately, both streams of cooling gas can flow smoothly out of the channel outlet 2131b, which is beneficial to the smooth progress of the cooling process and avoids the first air outlet 2131a and the second air outlet 2132a being opposite each other, which would cause the cooling gas in the first cooling chamber 210a to enter the second cooling chamber 210b and the cooling gas in the second cooling chamber 210b to enter the first cooling chamber 210a.

[0033] In an optional embodiment, refer to Figure 8 and Figure 9 As shown, the inner sidewall 213 also includes a connecting portion 2133, which is located between the first inner sidewall 2131 and the second inner sidewall 2132. The first inner sidewall 2131 and the second inner sidewall 2132 are respectively connected to the connecting portion 2133. Optionally, the first inner sidewall 2131, the connecting portion 2133 and the second inner sidewall 2132 are an integral structure, so that the first inner sidewall 2131, the connecting portion 2133 and the second inner sidewall 2132 form an arc-shaped channel, which directly serves as the air outlet channel 213a.

[0034] Furthermore, the inner sidewall 213 is provided with a second airflow inlet 213b, which penetrates the first inner sidewall 2131, the connecting portion 2133, and the second inner sidewall 2132, so that the second airflow inlet 213b communicates with the second cooling chamber 210b. Optionally, the second airflow inlet 213b can be a circular hole, a square hole, or other structures. The embodiments of this application do not limit the specific structure and shape of the second airflow inlet 213b.

[0035] In this embodiment, the connecting part 2133 isolates and connects the first inner sidewall 2131 and the second inner sidewall 2132, which facilitates the setting of the second airflow inlet 213b and the introduction of cooling gas from the outside into the second cooling chamber 210b through the second airflow inlet 213b, while not easily affecting the air outlet channel 213a and other structures.

[0036] Of course, in other embodiments, the inner sidewall 213 may not have a connecting part 2133, that is, the air outlet channel 213a is an annular structure, and the second airflow inlet 213b may be opened at the top of the second cooling chamber 210b (that is, the second top wall 214 mentioned later).

[0037] In a further embodiment, reference is made to... Figure 8 and Figure 9As shown, the second airflow inlet 213b and the second airflow outlet 2132a are offset in the circumferential direction of the inner wall 213. Optionally, there is one second airflow inlet 213b and multiple second airflow outlets 2132a, with the second airflow inlet 213b offset from each of the second airflow outlets 2132a in the circumferential direction of the inner wall 213.

[0038] In this embodiment, the cooling gas is introduced into the second cooling chamber 210b through the second airflow inlet 213b. After flowing sufficiently within the second cooling chamber 210b, it flows out through the second airflow outlet 2132a. This avoids the situation where the cooling gas does not flow sufficiently within the second cooling chamber 210b and flows out directly due to the second airflow inlet 213b and the second airflow outlet 2132a being opposite each other. This is beneficial for improving the heat dissipation effect on the central area of ​​the medium window 110 and enhancing the cooling effect.

[0039] Of course, in other embodiments, the second airflow inlet 213b and the second airflow outlet 2132a may be arranged opposite each other in the circumferential direction of the inner sidewall 213.

[0040] In the scheme of this application, reference is made to Figures 7-13 As shown, the cooling chamber 210 further includes a first top wall 211, an outer side wall 212, and a second top wall 214. Both the first top wall 211 and the outer side wall 212 are annular structures. The outer side wall 212 is located outside the inner side wall 213, forming an annular space between them. The first top wall 211, the outer side wall 212, and the inner side wall 213 together form the first cooling chamber 210a, and the second top wall 214 and the inner side wall 213 form the second cooling chamber 210b. Optionally, the first top wall 211, the first inner side wall 2131, and the outer side wall 212 form the first cooling chamber 210a, and the second top wall 214 and the second inner side wall 2132 form the second cooling chamber 210b.

[0041] Furthermore, the first top wall 211 is connected to the outer side wall 212 and the inner side wall 213 respectively. That is, the inner edge of the first top wall 211 is connected to the inner side wall 213, and the outer edge of the first top wall 211 is connected to the outer side wall 212. In this way, the first top wall 211, the inner side wall 213, and the outer side wall 212 can directly form the first cooling cavity 210a. Optionally, the first top wall 211 and the outer side wall 212, the first top wall 211 and the inner side wall 213, and the inner side wall 213 and the second top wall 214 can all be fixedly connected by welding, bonding, or other methods.

[0042] refer to Figure 6As shown, the second top wall 214 has a larger height, while the first top wall 211 has a smaller height. The inner side wall 213 protrudes from the surface of the first top wall 211 facing away from the medium window 110. The second top wall 214 is connected to the inner side wall 213, so that the second top wall 214 and the inner side wall 213 form a second cooling cavity 210b. Optionally, refer to... Figure 4 As shown, the second top wall 214 can be a circular structure. Of course, the second top wall 214 can also be a square structure, as long as it can cooperate with the inner side wall 213 to form the second cooling cavity 210b.

[0043] In this embodiment, since the inner sidewall 213 protrudes relative to the first top wall 211, the height of the second cooling cavity 210b is larger, and the volume of the second cooling cavity 210b is larger. This is beneficial for the cooling gas to fully dissipate heat to the central area of ​​the medium window 110 within the second cooling cavity 210b, thereby improving the heat dissipation effect.

[0044] Of course, in other embodiments, the inner sidewall 213 may not protrude relative to the first top wall 211, the heights of the first top wall 211 and the second top wall 214 may be equal, or the cooling chamber 210 may adopt other structures to form the first cooling chamber 210a and the second cooling chamber 210b.

[0045] In an optional embodiment, the cooling chamber 210 further includes a first strip-shaped isolation section 215, which extends radially along the medium window 110. Optionally, the first strip-shaped isolation section 215 can be a straight partition. The two ends of the first strip-shaped isolation section 215 are connected to the outer side wall 212 and the inner side wall 213, respectively. Optionally, the two ends of the first strip-shaped isolation section 215 are connected to the outer side wall 212 and the first inner side wall 2131, respectively. Thus, the first strip-shaped isolation section 215, the outer side wall 212, the inner side wall 213, the first top wall 211, and the upper surface of the medium window 110 form an airflow space, and the first airflow outlet 2131a communicates with this airflow space.

[0046] Optionally, the first strip-shaped isolation portion 215 and the first top wall 211, the first strip-shaped isolation portion 215 and the outer side wall 212, and the first strip-shaped isolation portion 215 and the first inner side wall 2131 can all be connected by welding, bonding, or other means, or the relevant structures can be directly processed on the whole material.

[0047] In another embodiment, combined Figure 7 and Figure 10As shown, the cooling chamber 210 also includes a plurality of first strip-shaped isolation sections 215. The first strip-shaped isolation sections 215 are located within the first cooling chamber 210a, and are spaced apart circumferentially along the medium window 110, with each first strip-shaped isolation section 215 extending radially along the medium window 110. Thus, two adjacent first strip-shaped isolation sections 215, the outer side wall 212, the inner side wall 213, the first top wall 211, and the upper surface of the medium window 110 form an airflow space. The plurality of first strip-shaped isolation sections 215 divide the first cooling chamber 210a into a plurality of airflow spaces. There are multiple first airflow outlets 2131a, and each airflow space is connected to at least one first airflow outlet 2131a. Optionally, each airflow space may be connected to one first airflow outlet 2131a, or each airflow space may be connected to two second airflow outlets 2132a.

[0048] Optionally, the number of first strip-shaped isolation sections 215 is equal to the number of airflow spaces. Each first strip-shaped isolation section 215 has the same structure and shape, and the first strip-shaped isolation sections 215 are evenly distributed along the circumference of the medium window 110, thereby dividing the space of the first cooling cavity 210a into multiple airflow spaces of equal volume. Of course, the first strip-shaped isolation sections 215 may also be unevenly distributed along the circumference of the medium window 110, and the volumes of the formed airflow spaces may also be unequal.

[0049] In this embodiment, by setting multiple first strip-shaped isolation sections 215, the first cooling chamber 210a is divided into multiple airflow spaces, and multiple airflows simultaneously cool the medium window 110, which is beneficial to improve the temperature uniformity of the medium window 110 in the circumferential direction.

[0050] In an optional embodiment, combined with Figure 7 and Figure 10 As shown, the cooling chamber 210 also includes a second strip-shaped isolation section 216, which is connected to the first top wall 211. The two can be connected by welding, bonding, or other methods, or the relevant structure can be directly processed on the integral material. The second strip-shaped isolation section 216 extends circumferentially along the medium window 110. Moreover, the second strip-shaped isolation section 216 is located between the inner side wall 213 and the outer side wall 212. Optionally, the second strip-shaped isolation section 216 is located between the first inner side wall 2131 and the outer side wall 212. The second strip-shaped isolation section 216 is located within the airflow space mentioned above and is used to separate the airflow space.

[0051] Optionally, the second strip-shaped partition 216 can be an arc-shaped partition. The second strip-shaped isolation section 216 divides the airflow space into an inner airflow channel 2101 and an outer airflow channel 2102. The inner airflow channel 2101 and the outer airflow channel 2102 are located on both sides of the second strip-shaped isolation section 216. Optionally, the second strip-shaped isolation section 216 forms the inner airflow channel 2101 with the first inner sidewall 2131, and the second strip-shaped isolation section 216 forms the outer airflow channel 2102 with the outer sidewall 212. Specifically, the second strip-shaped isolation section 216, the first inner sidewall 2131, the top wall, and the first strip-shaped isolation section 215 together form the inner airflow channel 2101, and the second strip-shaped isolation section 216, the outer sidewall 212, the top wall, and the first strip-shaped isolation section 215 together form the outer airflow channel 2102. Moreover, the inner airflow channel 2101 and the outer airflow channel 2102 are connected.

[0052] In this embodiment, by setting the second strip-shaped isolation section 216, the cooling gas entering the airflow space flows sequentially between the inner airflow channel 2101 and the outer airflow channel 2102, which helps to increase the airflow path, prolong the residence time of the cooling gas in the airflow space, and further improve the cooling effect.

[0053] In a further embodiment, there are multiple second strip-shaped isolation sections 216, which are spaced apart circumferentially along the medium window 110, and each second strip-shaped isolation section 216 extends circumferentially along the medium window 110. At least two second strip-shaped isolation sections 216 are provided in each airflow space. (Reference) Figure 7 and Figure 10 As shown, a first gap 216a is provided between two adjacent second strip-shaped isolation sections 216 located in the same airflow space, and a second gap 215a is provided between the first strip-shaped isolation section 215 and the second strip-shaped isolation section 216 located in the same airflow space. The inner airflow channel 2101 and the outer airflow channel 2102 are connected through the first gap 216a and the second gap 215a, respectively. That is, the inner airflow channel 2101 is connected to the outer airflow channel 2102 through the first gap 216a, and the inner airflow channel 2101 is connected to the outer airflow channel 2102 through the second gap 215a. In addition, the inner airflow channel 2101 is connected to the outlet channel 213a through the first airflow outlet 2131a.

[0054] Specifically, the cooling gas entering the inner airflow channel 2101 flows through the inner airflow channel 2101 and then flows out through the first airflow outlet 2131a, while the other part enters the outer airflow channel 2102 through the second gap 215a, flows through the outer airflow channel 2102 and then flows out through the first gap 216a and the first airflow outlet 2131a.

[0055] In this embodiment, multiple second strip-shaped isolation sections 216 are provided in each airflow space, which can further divert the airflow flowing into the airflow space in the circumferential direction of the medium window 110, so that the cooling gas is divided into at least two airflows and circulates simultaneously. The flow area of ​​each airflow is further reduced, which is more conducive to improving the temperature uniformity of the medium window 110 in the circumferential direction.

[0056] Optionally, two second strip-shaped isolation sections 216 are provided in each airflow space, and the two second strip-shaped isolation sections 216 in each airflow space form a second gap 215a between each of their adjacent first strip-shaped isolation sections 215.

[0057] In an optional embodiment, the cooling chamber 210 is provided with a plurality of first airflow inlets 211a. Optionally, the first top wall 211 is provided with a plurality of first airflow inlets 211a, and each inner airflow channel 2101 is opposite to and connected to at least one first airflow inlet 211a. That is, the cooling gas entering through the first airflow inlet 211a is split in the inner airflow channel 2101, with one part flowing in the inner airflow channel 2101 and the other part flowing in the outer airflow channel 2102. This part of the airflow has a longer residence time in the airflow space, which is beneficial to further improving the heat dissipation effect of the medium window 110. The cooling chamber 210 is also provided with a plurality of first airflow outlets 2131a. The first cooling chamber 210a is connected to the exhaust channel 213a through the first airflow outlets 2131a, and each inner airflow channel 2101 is connected to at least one first airflow outlet 2131a and the exhaust channel 213a. Optionally, the first airflow outlet 2131a is located on the first inner sidewall 2131.

[0058] In a further embodiment, each internal airflow channel 2101 is opposite to and connected to at least two first airflow inlets 211a. Around the circumference of the first cooling chamber 210a, each internal airflow channel 2101 has a first airflow inlet 211a at both ends. Optionally, each internal airflow channel 2101 is connected to two first airflow inlets 211a. Thus, by simultaneously introducing cooling gas into the same airflow space through at least two first airflow inlets 211a, the intake volume is increased, which is beneficial for improving the heat dissipation and cooling capacity of the cooling chamber 210.

[0059] In an optional embodiment, the first airflow inlet 211a and the first airflow outlet 2131a corresponding to each airflow space are staggered. Optionally, each internal airflow channel 2101 is connected to one first airflow outlet 2131a and two first airflow inlets 211a respectively. In the circumferential direction of the medium window 110, the first airflow outlet 2131a is located at the middle position of the two first airflow inlets 211a, and the first airflow outlet 2131a is opposite to the first gap 216a.

[0060] In this embodiment, the cooling gas entering the airflow space through the first airflow inlet 211a can circulate fully within the inner airflow channel 2101 and the outer airflow channel 2102 before flowing out through the first airflow outlet 2131a. This avoids the situation where the cooling gas does not flow fully within the first cooling chamber 210a due to the first airflow inlet 211a and the first airflow outlet 2131a being opposite each other, thus improving the heat dissipation effect on the medium window 110 and enhancing the cooling effect.

[0061] Specifically, refer to Figure 10 As shown, taking the example of setting two second strip-shaped isolation sections 216 in each airflow space, the position of the first airflow outlet 2131a and the gap between the two second strip-shaped isolation sections 216 are set accordingly. The arrows indicate the flow direction of the cooling gas after the cooling gas is introduced into the two first airflow inlets 211a. Part of the cooling gas flows in the inner airflow channel 2101, and the other part of the cooling gas enters the outer airflow channel 2102 through the gap between the first strip-shaped isolation section 215 and the second strip-shaped isolation section. The two airflows flowing in the outer airflow channel 2102 merge and flow back to the inner airflow channel 2101 through the gap between the two second strip-shaped isolation sections 216, and finally flow out through the first airflow outlet 2131a.

[0062] With this configuration, the flow area of ​​each airflow in the circumferential direction of the cooling chamber 210 is smaller, and the difference in length between each inner airflow channel 2101 and outer airflow channel 2102 in the circumferential direction of the cooling chamber 210 is reduced, resulting in a reduction in the difference in heat carried away. This is beneficial for reducing the temperature difference of the medium window 110 and improving the uniformity of heat dissipation.

[0063] Of course, in other embodiments, the first airflow inlet 211a and the first airflow outlet 2131a connected to each airflow space can be arranged relative to each other.

[0064] In this application, the cooling chamber 210 is provided with a second airflow inlet 213b, which communicates with the second cooling chamber 210b. Optionally, the second airflow inlet 213b is located on the inner sidewall 213. When the semiconductor process chamber is in a non-process state, i.e., in standby mode, there is no need to dissipate heat from the dielectric window 110; in this state, it is sufficient to keep the dielectric window 110 warm. The two first airflow inlets 211a located on both sides of the first strip-shaped isolation portion 215 are connected, enabling the two adjacent airflow spaces to communicate, thereby connecting each airflow space sequentially. Moreover, the second airflow inlet 213b and the exhaust channel 213a are both in a closed state. Thus, the first cooling chamber 210a and the second cooling chamber 210b form a closed channel, and the cooling gas circulates within the first cooling chamber 210a and the second cooling chamber 210b. Compressed gas will not flow out, nor will new compressed gas be introduced. This mode is a closed-loop temperature control mode.

[0065] When the semiconductor process chamber is in process mode, the dielectric window 110 needs to be cooled. All first airflow inlets 211a, second airflow inlets 213b, and exhaust channels 213a are open. Cooling gas is introduced into each of the first airflow inlets 211a and second airflow inlets 213b individually, while cooled gas flows out of the exhaust channels 213a. Thus, the cooling gas in the first cooling chamber 210a cools the annular region of the dielectric window 110, and the cooling gas in the second cooling chamber 210b cools the central region of the dielectric window 110.

[0066] In this embodiment, under closed-loop temperature control mode, each airflow space is connected sequentially, and the second airflow inlet 213b and outlet channel 213a are closed, so that the cooling gas can circulate and make full use of the heat of the cooling gas to keep the medium window 110 warm. No other heating components are needed to additionally heat the cooling gas or the medium window 110, thus saving energy. Of course, in other embodiments, regardless of whether the semiconductor process chamber is in a process state or a non-process state, each of the first airflow inlet 211a, the second airflow inlet 213b, and the air outlet channel 213a remains open.

[0067] In an optional embodiment, refer to Figures 2-6 As shown, the cooling device 200 also includes multiple first air amplifiers 221, multiple first heaters 231, and multiple first connecting pipes 241. The first air amplifiers 221 are used to introduce compressed gas as a power source to absorb more gas as cooling gas. Specifically, a small amount of compressed gas is introduced into the inlet of the first air amplifier 221 as a power source, causing the air amplifier to draw air from its surrounding environment. The absorbed gas flows to form a high-pressure, high-speed airflow, which then flows out from the outlet of the first air amplifier 221. Thus, by using a small amount of compressed gas through the first air amplifier 221, a larger amount of cooling gas can be introduced into the first cooling chamber 210a, which helps to increase the flow rate of the cooling gas and improve the cooling effect. The inlet of the first air amplifier 221 can be connected to components that generate compressed air, such as an air compressor, or it can be connected to a plant to directly utilize the compressed gas discharged from the plant.

[0068] The first connecting pipe 241 is disposed above the cooling chamber 210. The inlet end of the first heater 231 is connected to the outlet end of the first air amplifier 221, and the outlet end of the first heater 231 is connected to the first airflow inlet 211a through the first connecting pipe 241. That is, the inlet end of the first connecting pipe 241 is connected to the outlet end of the first heater 231, and the outlet end of the first connecting pipe 241 is connected to the first airflow inlet 211a. The first connecting pipe 241 presses against the cooling chamber 210, and the weight of each first connecting pipe 241 and the weight of each first air amplifier 221 both act on the cooling chamber 210, which is conducive to the close contact between the cooling chamber 210 and the medium window 110.

[0069] The first air amplifier 221, the first heater 231, the first connecting pipe 241, and the first airflow inlet 211a are connected in a corresponding manner. With this configuration, the compressed gas introduced into the first air amplifier 221 is heated by the first heater 231 and then flows into the first cooling chamber 210a through the first airflow inlet 211a to cool the annular area of ​​the medium window 110.

[0070] In this embodiment, the number of first air amplifiers 221, first heaters 231, and first connecting pipes 241 is increased. Each airflow space in the annular region is connected to at least one first air amplifier 221, at least one first heater 231, and at least one first connecting pipe 241, so that multiple airflow spaces can simultaneously and quickly intake air, which is beneficial to increase the compressed gas flow rate and further improve the cooling and heat dissipation effects.

[0071] In an optional embodiment, the cooling device 200 further includes a second air amplifier 222, a second heater 232, a second connecting pipe 242, and an air outlet pipe 260. The second air amplifier 222 is used to introduce compressed gas, which serves as the cooling gas. The principle of the second air amplifier 222 is the same as that of the first air amplifier 221. The inlet end of the second heater 232 is connected to the outlet end of the second air amplifier 222, and the outlet end of the second heater 232 is connected to the second airflow inlet 213b through the second connecting pipe 242. The inlet end of the air outlet pipe 260 is connected to the channel outlet 2131b. Optionally, the air outlet pipe 260 can be a round pipe, a square pipe, or the like as the air outlet duct.

[0072] With this configuration, the compressed gas introduced into the second air amplifier 222 is heated by the second heater 232 and then flows into the second cooling chamber 210b through the second air inlet 213b to cool the central region of the medium window 110.

[0073] In a further embodiment, the cooling device 200 further includes a first control valve 281, a second control valve 282, and a plurality of three-way control valves 270. The first control valve 281 is located at the inlet end of the second air amplifier 222, and the second control valve 282 is located at the outlet end of the air outlet duct 260. The first control valve 281 controls whether cooling gas is introduced into the inlet end of the second air amplifier 222, and the second control valve 282 controls whether cooling gas flows out of the outlet end of the air outlet duct 260. The first control valve 281 and the second control valve 282 can be shut-off valves, or other types of control valves.

[0074] The three-way control valves 270 correspond one-to-one with the first strip-shaped isolation sections 215. Each three-way control valve 270 is provided with an air inlet 271, a first air outlet, and a second air outlet. The two first air inlets 211a located on both sides of the first strip-shaped isolation section 215 are connected to the two first air amplifiers 221, which are respectively connected to the first air outlet and the second air outlet of the corresponding three-way control valve 270. In this way, the three-way control valves 270, as flow regulating components, can regulate the flow rate of compressed gas in the passage where the first air amplifiers 221 are located, thereby regulating the cooling effect of the cooling device 200 on the medium window 110. Optionally, the three-way control valves 270 can be solenoid valves, pneumatic valves, or other types of control valves.

[0075] refer to Figures 3-6 As shown, when the semiconductor process chamber is in a non-process state, the air inlet 271 is closed. The inlets of two adjacent first air amplifiers 221 are connected through a three-way control valve 270, enabling communication between the two adjacent airflow spaces. Furthermore, both the first control valve 281 and the second control valve 282 are closed, thus closing the second airflow inlet 213b and the outlet channel 213a. In this way, each first air amplifier 221, each first heater 231, each first connecting pipe 241, and the first cooling chamber 210a form a closed channel. Simultaneously, the second air amplifier 222, the second heater 232, the second connecting pipe 242, the second cooling chamber 210b, and the outlet pipe 260 form a closed channel. Compressed gas circulates within the first cooling chamber 210a and the second cooling chamber 210b; compressed gas does not flow out, nor does new compressed gas enter. This mode is a closed-loop temperature control mode.

[0076] When the semiconductor process chamber is in the process state, the air inlet 271 is open, enabling each first airflow inlet 211a to be open and allowing cooling gas to flow into each inlet individually. Furthermore, both the first control valve 281 and the second control valve 282 are open, enabling the second airflow inlet 213b and the outlet channel 213a to be open. Thus, each first air amplifier 221, each first heater 231, each first connecting pipe 241, and the first cooling chamber 210a are sequentially connected, and the cooling gas cools the annular region of the dielectric window 110. Simultaneously, the second air amplifier 222, the second heater 232, the second connecting pipe 242, the second cooling chamber 210b, and the outlet pipe 260 are sequentially connected, and the cooling gas cools the central region of the dielectric window 110.

[0077] In this embodiment, under closed-loop temperature control mode, by closing the inlet 271 of the first control valve 281, the second control valve 282, and the three-way control valve 270, the first air inlet 211a, the second air inlet 213b, and the outlet channel 213a can be directly closed, allowing the compressed gas to circulate and fully utilize the heat of the compressed gas to keep the medium window 110 warm. This eliminates the need for the first heater 231 and the second heater 232 to consume a large amount of power to continuously heat the compressed gas, which helps to improve heating efficiency and reduce the heating power of the first heater 231 and the second heater 232.

[0078] Optionally, the first cooling chamber 210a is divided into two airflow spaces, each airflow space is provided with two first airflow inlets 211a, that is, the number of first airflow inlets 211a is four. The number of first air amplifiers 221, first heaters 231 and first connecting pipes 241 are also four, and the number of three-way control valves 270 is two.

[0079] Specifically, for ease of explanation, the two three-way control valves 270 are named three-way valve 1 and three-way valve 2, the two first air amplifiers 221 connected to three-way valve 1 are named air amplifier 1 and air amplifier 2, the two first air amplifiers 221 connected to three-way valve 2 are named air amplifier 3 and air amplifier 4, and the second air amplifier 222 is named air amplifier 5. Air amplifier 1 and air amplifier 4 are connected to the same airflow space, and air amplifier 2 and air amplifier 3 are connected to the same airflow space. The four first airflow inlets 211a are named airflow inlet 1, airflow inlet 2, airflow inlet 3 and airflow inlet 4. Airflow inlet 1 is connected to air amplifier 1, airflow inlet 2 is connected to air amplifier 2, airflow inlet 3 is connected to air amplifier 3, and airflow inlet 4 is connected to air amplifier 4.

[0080] In open-loop temperature control mode, compressed air is supplied to each air amplifier, and both the first heater 231 and the second heater 232 are in heating mode. In closed-loop temperature control mode, the air inlets 271 of three-way valve 1 and three-way valve 2 are closed, and the first control valve 281 and the second control valve 282 are closed. Only air amplifiers 1, 3, and 5 are supplied with compressed air. The compressed gas enters one of the airflow spaces through three-way valve 1, air amplifier 1, heaters, and air inlet 1. After flowing in the airflow space, it enters the heater and air amplifier 4 through air inlet 4, and then flows through three-way valve 2 into air amplifier 3, heaters, and air inlet 3 to enter another airflow space. After flowing in the other airflow space, it enters the heater and air amplifier 2 through air inlet 2 and returns to three-way valve 1, thus circulating continuously. In this way, the compressed gas continuously circulates, which helps to improve heating efficiency.

[0081] Of course, in other embodiments, the cooling device 200 may also adopt an open-loop temperature control mode, that is, without connecting the two adjacent first air amplifiers 221 through the three-way control valve 270, when the semiconductor process chamber is in a non-process state, the first control valve 281 and the second control valve 282 are both in the open state, and each first air amplifier 221 and the second air amplifier 222 continuously supplies compressed air, and the compressed gas after heat exchange flows out through the outlet channel 213a.

[0082] refer to Figure 14 The coordinate diagram shown represents time on the horizontal axis and the heating power of the first heater 231 and the second heater 232 on the vertical axis. The total power of each heater is 1.5 kW. In open-loop temperature control mode, all four first heaters 231 and one second heater 232 are on, with a total heating power of 5 × 1.5 kW × 0.6 = 4.5 kW. In closed-loop temperature control mode, only two first heaters 231 are on, with a total heating power of approximately 2 × 1.5 kW × 0.35 = 1.05 kW. Therefore, the closed-loop temperature control mode proposed in this solution effectively solves the problem of excessive heater power consumption.

[0083] In an optional embodiment, refer to Figure 6 As shown, the semiconductor process chamber also includes a jet assembly 500 and an inlet pipe 400. The jet assembly 500 is disposed at the dielectric window 110, and the inlet pipe 400 is connected to the jet assembly 500. The inlet pipe 400 can introduce process gas into the interior of the chamber body 100 through the jet assembly 500. (Reference) Figures 8-9 as well as Figure 11 As shown, the first top wall 211 is also provided with a mounting groove 211b, and the air intake pipe 400 is disposed in the mounting groove 211b.

[0084] Based on the semiconductor process chamber disclosed in this application, this application embodiment also provides a semiconductor process apparatus, which includes the aforementioned semiconductor process chamber. With this configuration, the semiconductor process chamber of this semiconductor process apparatus, through a specially structured cooling chamber 210, can simultaneously dissipate heat from different areas of the dielectric window 110, increasing the heat dissipation area of ​​the dielectric window 110 and improving the cooling effect of the cooling device 200 and the heat dissipation effect of the dielectric window 110.

[0085] Optionally, the semiconductor process equipment also includes a temperature sensing element 300, which can be a thermocouple, or other temperature sensing element. The temperature sensing element 300 is disposed on the dielectric window 110 to detect the temperature of the dielectric window 110. The first heater 231 and the second heater 232 are used to adjust the heating state according to the temperature detected by the temperature sensing element 300, so as to maintain the temperature of the dielectric window 110 at a preset temperature. The preset temperature can be set as needed; it can be a temperature value or a temperature range.

[0086] When the temperature sensing element 300 detects that the temperature of the medium window 110 is greater than the preset temperature, it reduces the heating power of the first heater 231 and the second heater 232; when the temperature sensing element 300 detects that the temperature of the medium window 110 is less than the preset temperature, it increases the heating power of the first heater 231 and the second heater 232.

[0087] Optionally, the number of temperature sensing elements 300 can be multiple, and the temperature sensing elements 300 are arranged at intervals to detect the position of different areas of the medium window 110, so as to facilitate zoned control of the temperature sensing elements 300. Further optionally, the first top wall 211 can be provided with mounting holes for installing the temperature sensing elements 300.

[0088] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of this application.

Claims

1. A semiconductor process chamber, characterized in that, It includes a chamber body (100), a medium window (110), and a cooling device (200), wherein the medium window (110) is disposed above the chamber body (100). The cooling device (200) includes a cooling chamber (210) disposed above the medium window (110). The cooling chamber (210) includes a first cooling chamber (210a) and a second cooling chamber (210b). The first cooling chamber (210a) extends circumferentially along the medium window (110) and has an annular structure. The second cooling chamber (210b) is located in the central area enclosed by the annular structure. Cooling gas can be introduced into both the first cooling chamber (210a) and the second cooling chamber (210b) so that the cooling gas cools different areas of the medium window (110).

2. The semiconductor process chamber according to claim 1, characterized in that, The cooling chamber (210) includes an inner wall (213), which is an annular structure. The space outside the inner wall (213) forms the first cooling chamber (210a), and the space surrounded by the inner wall (213) forms the second cooling chamber (210b). The inner sidewall (213) is provided with an air outlet channel (213a), which extends circumferentially along the inner sidewall (213) and is connected to the first cooling chamber (210a) and the second cooling chamber (210b) respectively.

3. The semiconductor process chamber according to claim 2, characterized in that, The inner sidewall (213) includes a first inner sidewall (2131) and a second inner sidewall (2132). Both the first inner sidewall (2131) and the second inner sidewall (2132) are annular structures. The first inner sidewall (2131) is located outside the second inner sidewall (2132). The air outlet channel (213a) is located between the first inner sidewall (2131) and the second inner sidewall (2132).

4. The semiconductor process chamber according to claim 3, characterized in that, The first inner wall (2131) is provided with a first airflow outlet (2131a), and the first cooling chamber (210a) is connected to the air outlet channel (213a) through the first airflow outlet (2131a). The second inner wall (2132) is provided with a second airflow outlet (2132a), and the second cooling chamber (210b) is connected to the air outlet channel (213a) through the second airflow outlet (2132a). The first air outlet (2131a) and the second air outlet (2132a) are offset in the circumferential direction of the inner wall (213).

5. The semiconductor process chamber according to claim 4, characterized in that, The inner sidewall (213) further includes a connecting portion (2133), which is located between the first inner sidewall (2131) and the second inner sidewall (2132). The first inner sidewall (2131) and the second inner sidewall (2132) are respectively connected to the connecting portion (2133). The inner sidewall (213) is provided with a second airflow inlet (213b), which penetrates the first inner sidewall (2131), the connecting part (2133) and the second inner sidewall (2132) so that the second airflow inlet (213b) communicates with the second cooling chamber (210b).

6. The semiconductor process chamber according to claim 5, characterized in that, The second airflow inlet (213b) and the second airflow outlet (2132a) are offset in the circumferential direction of the inner wall (213).

7. The semiconductor process chamber according to claim 2, characterized in that, The cooling chamber (210) further includes a first top wall (211), an outer side wall (212), and a second top wall (214). The first top wall (211) and the outer side wall (212) are both annular structures. The outer side wall (212) is located outside the inner side wall (213). The first top wall (211) is connected to the outer side wall (212) and the inner side wall (213) respectively. The first top wall (211), the inner side wall (213), and the outer side wall (212) form the first cooling chamber (210a). The inner sidewall (213) protrudes from the surface of the first top wall (211) facing away from the medium window (110), and the second top wall (214) is connected to the inner sidewall (213) so that the second top wall (214) and the inner sidewall (213) form the second cooling cavity (210b).

8. The semiconductor process chamber according to claim 2, characterized in that, The cooling chamber (210) further includes a plurality of first strip-shaped isolation sections (215), which are located within the first cooling chamber (210a). The first strip-shaped isolation sections (215) are arranged circumferentially along the medium window (110), and each of the first strip-shaped isolation sections (215) extends radially along the medium window (110). The plurality of first strip-shaped isolation sections (215) divide the first cooling chamber (210a) into a plurality of airflow spaces.

9. The semiconductor process chamber according to claim 8, characterized in that, The cooling chamber (210) further includes a plurality of second strip-shaped isolation sections (216), which are spaced apart along the circumference of the medium window (110), and each second strip-shaped isolation section (216) extends along the circumference of the medium window (110), and at least two second strip-shaped isolation sections (216) are provided in each airflow space. The second strip-shaped isolation section (216) divides each of the airflow spaces into an inner airflow channel (2101) and an outer airflow channel (2102). The inner airflow channel (2101) and the outer airflow channel (2102) are located on both sides of the second strip-shaped isolation section (216). A first gap (216a) is provided between two adjacent second strip-shaped isolation sections (216) located in the same airflow space. A second gap (215a) is provided between the first strip-shaped isolation section (215) and the second strip-shaped isolation section (216) located in the same airflow space. The inner airflow channel (2101) and the outer airflow channel (2102) are connected through the first gap (216a) and the second gap (215a) respectively.

10. The semiconductor process chamber according to claim 9, characterized in that, The cooling chamber (210) is provided with a plurality of first airflow inlets (211a) and a plurality of first airflow outlets (2131a). Each of the internal airflow channels (2101) is opposite to and connected to at least two of the first airflow inlets (211a), and each of the internal airflow channels (2101) is connected to the air outlet channel (213a) through at least one of the first airflow outlets (2131a). In the circumferential direction of the first cooling chamber (210a), each of the inner airflow channels (2101) is provided with a first airflow inlet (211a) at both ends, and the first airflow inlet (211a) and the first airflow outlet (2131a) connected to each airflow space are staggered.

11. The semiconductor process chamber according to claim 10, characterized in that, The cooling chamber (210) is provided with a second airflow inlet (213b), which communicates with the second cooling chamber (210b). When the semiconductor process chamber is in a non-process state, the two first airflow inlets (211a) located on both sides of the first strip-shaped isolation section (215) are connected, and the second airflow inlet (213b) and the air outlet channel (213a) are both in a closed state. When the semiconductor process chamber is in the process state, each of the first airflow inlets (211a), the second airflow inlets (213b), and the air outlet channel (213a) is in the open state.

12. The semiconductor process chamber according to claim 11, characterized in that, The cooling device (200) further includes a plurality of first air amplifiers (221), a plurality of first heaters (231), and a plurality of first connecting pipes (241). The first air amplifiers (221) are used to introduce cooling gas. The inlet end of the first heater (231) is connected to the outlet end of the first air amplifier (221). The outlet end of the first heater (231) is connected to the first air inlet (211a) through the first connecting pipe (241). The first air amplifiers (221), the first heaters (231), the first connecting pipes (241), and the first air inlet (211a) are connected one-to-one. The cooling device (200) further includes a second air amplifier (222), a second heater (232), a second connecting pipe (242), and an air outlet pipe (260). The second air amplifier (222) is used to introduce cooling gas. The inlet end of the second heater (232) is connected to the outlet end of the second air amplifier (222). The outlet end of the second heater (232) is connected to the second air inlet (213b) through the second connecting pipe (242). The inlet end of the air outlet pipe (260) is connected to the air outlet channel (213a).

13. The semiconductor process chamber according to claim 12, characterized in that, The cooling device (200) further includes a first control valve (281), a second control valve (282), and a plurality of three-way control valves (270). The first control valve (281) is located at the inlet end of the second air amplifier (222), and the second control valve (282) is located at the outlet end of the air outlet pipe (260). The three-way control valves (270) correspond one-to-one with the first strip-shaped isolation section (215). Each of the three-way control valves (270) is provided with an air inlet (271), a first air outlet, and a second air outlet. The two first air amplifiers (221) connected to the two first air inlets (211a) on both sides of the first strip-shaped isolation section (215) are respectively connected to the first air outlet and the second air outlet of the corresponding three-way control valve (270). When the semiconductor process chamber is in a non-process state, the first control valve (281), the second control valve (282), and the air inlet (271) are all in a closed state; When the semiconductor process chamber is in the process state, the first control valve (281), the second control valve (282), and the air inlet (271) are all in the open state.

14. A semiconductor process apparatus, characterized in that, Includes the semiconductor process chamber as described in any one of claims 1-13.

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