Plate-type heating device and manufacturing method thereof

By embedding non-sintered ceramic powder between the heating wire and the ceramic substrate, the problem of cracking caused by the difference in thermal expansion is solved, and the thermal conductivity is improved, thus realizing the high-efficiency production of plate heating devices.

CN121970535APending Publication Date: 2026-05-01KSM COMPONENT CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
KSM COMPONENT CO LTD
Filing Date
2024-07-30
Publication Date
2026-05-01

AI Technical Summary

Technical Problem

Existing plate heating devices suffer from cracks due to the difference in thermal expansion between the heating wire and the ceramic substrate, and their thermal conductivity is reduced.

Method used

Unsintered ceramic powder is embedded between the outer periphery of the heating wire and the ceramic substrate to absorb the stress caused by the difference in thermal expansion and to improve thermal conductivity without gaps.

Benefits of technology

It significantly reduces crack formation and improves the thermal conductivity between the heating wire and the ceramic substrate, thereby increasing production efficiency.

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Abstract

The present invention provides a plate-type heating device and a method of manufacturing the same, the device including a ceramic plate substrate and a heating wire embedded in the ceramic plate substrate, in which a non-sintered ceramic powder is positioned between an outer peripheral portion of the heating wire and the ceramic plate substrate. The non-sintered ceramic powder is a material having a sintering temperature that is at least 50 DEG C higher than a ceramic material constituting the ceramic plate substrate, a coefficient of thermal expansion that is less than or equal to a coefficient of thermal expansion of the ceramic material, and a coefficient of thermal conductivity that is greater than or equal to a coefficient of thermal conductivity of the ceramic material.
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Description

Technical Field

[0001] This application claims priority to Korean Patent Application No. 10-2023-0100147, filed on August 1, 2023, the entire contents of which are incorporated herein by reference.

[0002] This invention relates to a plate heating device and its manufacturing method. Background Technology

[0003] Plate heating devices used for purposes such as wafer heating in semiconductor manufacturing processes have a structure in which heating wires are arranged in a ceramic substrate. That is, the plate heating device heats the substrate by arranging heating wires that receive electricity and generate heat in the substrate through bending or flexing, and by supplying power to the heating wires.

[0004] Figure 10 This is a cross-sectional view showing the layout of the heating wires in a conventional plate heating device. (Refer to...) Figure 10 The manufacturing method of a conventional plate heating device is described below. First, grooves for arranging heating wires are formed on a ceramic release body (or molded body or sintered body) made of Al2O3 or AlN material, and linear heating wires 2 are inserted and arranged in the grooves. In this case, a separate coating is formed on the outer periphery of the heating wires 2. Next, a ceramic release body made of Al2O3 or AlN material or Al2O3 or AlN powder is laminated onto the ceramic release body on which the heating wires 2 are arranged, and then pressure sintering is performed to manufacture a ceramic plate sintered body with embedded heating wires.

[0005] The disadvantages of the aforementioned conventional plate sintered bodies are that cracks are prone to occur due to stress generated by the difference in thermal expansion between the ceramic substrate and the heating wire material (the heating wire is heated to a temperature approximately 100°C to 200°C higher than the ceramic substrate). Furthermore, because the heating wire is fitted and inserted into the groove, a gap exists between the ceramic substrate and the heating wire, resulting in reduced thermal conductivity.

[0006] Therefore, it is necessary to study and improve the cracking problem of plate heating devices and the problem of reduced thermal conductivity between heating wires and ceramic substrates.

[0007] [Existing technical documents]

[0008] [Patent Literature]

[0009] Korean Patent Application Publication No. 10-2014-0023743 Summary of the Invention

[0010] Technical issues

[0011] The present invention is designed to solve the above-mentioned problems of the prior art, and its purpose is to provide a plate heating device that has excellent stress absorption capacity due to the difference in thermal expansion between the heating wire and the ceramic plate substrate, so as to minimize the generation of cracks, and has excellent thermal conductivity between the heating wire and the ceramic plate substrate; and a method for manufacturing the plate heating device.

[0012] Technical solution

[0013] To achieve the above objectives, the present invention provides a plate heating device, the plate heating device comprising: Ceramic substrate; and Heating wires embedded inside the ceramic substrate. The non-sintered ceramic powder is positioned between the outer periphery of the heating wire and the ceramic substrate.

[0014] In one embodiment of the invention, the non-sintered ceramic powder can be positioned continuously or intermittently along the heating line.

[0015] In one embodiment of the present invention, based on the cross-section of the heating wire, the non-sintered ceramic powder may be located only between a localized outer peripheral portion and the ceramic substrate, or between the entire outer peripheral portion and the ceramic substrate.

[0016] In one embodiment of the invention, based on the cross-section of the heating wire, the partial outer peripheral portion can be 20% to 90% of the outer peripheral portion.

[0017] In one embodiment of the invention, based on the cross-section of the heating wire, the partial outer peripheral portion can be 50% to 90% of the outer peripheral portion.

[0018] In one embodiment of the invention, if, based on the cross-section of the heating wire, the unsintered ceramic powder is located only between the local peripheral portion and the ceramic substrate, then the unsintered ceramic powder ky is filled from the bottom of the heating wire.

[0019] In one embodiment of the present invention, the ceramic substrate or non-sintered ceramic powder may be arranged between the heating wires.

[0020] The non-sintered ceramic powder may be a material having a sintering temperature that is at least 50°C higher than the sintering temperature of the ceramic material constituting the ceramic substrate.

[0021] In one embodiment of the present invention, the non-sintered ceramic powder may have a coefficient of thermal expansion that is less than or equal to the coefficient of thermal expansion of the ceramic material constituting the ceramic substrate.

[0022] In one embodiment of the present invention, the non-sintered ceramic powder may have a thermal conductivity greater than or equal to that of the ceramic material constituting the ceramic substrate.

[0023] In one embodiment of the present invention, the non-sintered ceramic powder may be arranged to have a thickness of 30 μm or more.

[0024] In addition, the present invention provides a method for manufacturing a plate heating device, the method comprising the following steps: A slot for the heating wire is formed on a release body molded from first ceramic powder; A second ceramic powder having a sintering temperature that is at least 50°C higher than that of the first ceramic powder is filled into the slot for the heating wire. The heating wire is wired into the slot for the heating wire that is filled with the second ceramic powder; The step of laminating the first ceramic is to laminate the first ceramic powder by coating the first ceramic powder onto a release body with wiring of heating wires, or to laminate a release body molded from the first ceramic powder onto a release body with wiring of heating wires; and The laminate of the first ceramic was sintered and laminated at a temperature higher than or equal to the sintering temperature of the first ceramic and lower than the sintering temperature of the second ceramic.

[0025] In one embodiment of the present invention, the step of wiring the heating wire may be to arrange the heating wire on the filled second ceramic powder, to arrange the heating wire to be partially embedded in the second ceramic powder, or to arrange the heating wire to be entirely embedded in the second ceramic powder.

[0026] In one embodiment of the invention, in the step of wiring the heating wire, if the heating wire is arranged on the filled second ceramic powder or arranged to be partially embedded in the second ceramic powder, then a step of coating the second ceramic powder to cover the entire heating wire with the second ceramic powder may be performed before the step of laminating the first ceramic.

[0027] In one embodiment of the invention, in the step of forming the slot, the slot may be formed to have a size that allows one heating wire to be arranged according to the heating wire arrangement configuration, the slot may be formed to have a size that allows two or more heating wires to be arranged in each heating wire arrangement area, or the slot may be formed to have a size that allows all heating wires to be arranged.

[0028] Beneficial effects

[0029] According to the plate heating device of the present invention, since the non-sintered ceramic powder effectively absorbs the stress caused by the difference in thermal expansion between the heating wire and the ceramic plate substrate, it has the effect of significantly reducing the generation of cracks.

[0030] In addition, since the non-sintered ceramic powder fills the space between the outer periphery of the heating wire and the ceramic substrate without any gaps, it has the effect of significantly improving the thermal conductivity between the heating wire and the ceramic substrate.

[0031] The manufacturing method of the plate heating device of the present invention has the effect of improving the production efficiency of heating devices having the above-described structure. Attached Figure Description

[0032] Figures 1 to 4 This is a cross-sectional view showing one embodiment of the plate heating device according to the present invention.

[0033] Figures 5 to 8 This is a cross-sectional view illustrating one embodiment of a method for manufacturing a plate heating device according to the present invention.

[0034] Figure 9 This is a cross-sectional view showing one embodiment of the plate heating device according to the present invention.

[0035] Figure 10 This is a cross-sectional view showing the arrangement of heating wires in a conventional plate heating device. Detailed Implementation

[0036] In the following description, embodiments of the invention will be detailed with reference to the accompanying drawings to enable those skilled in the art to readily practice the invention. However, the invention can be implemented in many different forms and is not limited to the embodiments described herein. Throughout the specification, similar portions are indicated by the same reference numerals.

[0037] Figures 1 to 4 This is a cross-sectional view showing one embodiment of the plate heating device according to the present invention.

[0038] The plate heating device 100 of the present invention is characterized by including a ceramic plate substrate 10 and a heating wire 20 embedded in the ceramic plate substrate, wherein non-sintered ceramic powder 30 is positioned between the outer peripheral portion of the heating wire 20 and the ceramic plate substrate 10.

[0039] The non-sintered ceramic powder 30 serves to absorb stress caused by the difference in thermal expansion between the heating wire 20 and the ceramic substrate 10. Typically, the heating wire 20 is made of a metallic material, while the ceramic substrate 10 is made of ceramic materials such as Al2O3, AlN, or ALON, resulting in different thermal expansion properties. Therefore, during heating, stress is generated due to this difference in thermal expansion, frequently causing cracks in the ceramic substrate. In particular, when the plate heating device 100 is operating, the heating wire 20 is heated to a temperature approximately 100°C to 200°C higher than the ceramic substrate 10; therefore, due to this temperature difference, cracks sometimes occur more frequently.

[0040] The plate heating device 100 of the present invention has a non-sintered ceramic powder 30 positioned between the heating line 20 and the ceramic plate substrate 10, and absorbs stress through the flowability of the non-sintered ceramic powder 30, thereby significantly reducing the generation of cracks in the ceramic plate substrate 10.

[0041] Furthermore, the free-flowing, non-sintered ceramic powder 30 fills the space between the heating wire 20 and the ceramic substrate 10 without gaps, thereby improving the thermal conductivity between the heating wire and the ceramic substrate. That is, if the heating wire is inserted into a groove formed in the ceramic substrate as in the prior art, gaps inevitably occur between the heating wire and the ceramic substrate. However, according to the present invention, since the generation of such gaps is prevented, the thermal conductivity can be improved.

[0042] In one embodiment of the invention, the non-sintered ceramic powder 30 may be positioned continuously or intermittently along the heating line 20. As described above, the term "continuous" means that the non-sintered ceramic powder 30 is arranged continuously along the outer periphery of the heating line from beginning to end. Conversely, the term "intermittent" as described above means that the non-sintered ceramic powder 30 is arranged along the outer periphery of the heating line 20, but not in certain portions of the outer periphery, thus forming one or more discontinuities based on the non-sintered ceramic powder 30.

[0043] In one embodiment of the present invention, based on the cross-section of the heating wire 10, the non-sintered ceramic powder 30 can be as follows: Figure 2 The image shows only the area between the outer periphery and the ceramic substrate, or as shown... Figure 1 and Figure 3 The image shows the area located between the entire outer periphery and the ceramic substrate.

[0044] In one embodiment of the invention, based on the cross-section of the heating wire 20, the local outer peripheral portion can be 20% to 90%, 50% to 90%, or 55% to 90% of the outer peripheral portion. In this case, if the non-sintered ceramic powder 30 is positioned at more than 50%, the stress transmitted to the adjacent ceramic substrate 10 when the volume of the heating wire 20 expands is minimized, and this stress is readily absorbed by the non-sintered ceramic powder 30, which is therefore preferred.

[0045] In one embodiment of the invention, if, based on the cross-section of the heating wire 20, the non-sintered ceramic powder 30 is located only between a localized outer peripheral portion and the ceramic substrate, then as... Figure 2 As shown, non-sintered ceramic powder can be filled from the bottom of the heating wire.

[0046] In one embodiment of the present invention, the heating wires 20 can be arranged as follows: Figure 1 and Figure 2 The ceramic substrate 10 is arranged as shown, or it can be arranged as follows: Figure 3 and Figure 4 The arrangement shown is of non-sintered ceramic powder 30. (As shown...) Figure 3 and Figure 4 As shown, if non-sintered ceramic powder 30 is arranged between the heating wires 20, the stress absorption capacity of the non-sintered ceramic powder 30 can be further improved.

[0047] In one embodiment of the present invention, the non-sintered ceramic powder may be a material whose sintering temperature is 50°C or more, preferably 100°C or more, higher than the ceramic material constituting the ceramic substrate.

[0048] The ceramic material constituting the substrate may include, but is not limited to, Al2O3, AlN, ALON, etc.

[0049] Non-sintered ceramic powder materials with a sintering temperature 50°C or higher than that of ceramic materials can include, but are not limited to, oxide-based, carbide-based, nitride-based, or boride-based ceramics, preferably MgO, WC, TaC, TiC, CNT, graphene, SiC, SiC whiskers, BN, TiN, ZrB2, TiB, etc.

[0050] In one embodiment of the present invention, the coefficient of thermal expansion of the non-sintered ceramic powder may be less than or equal to the coefficient of thermal expansion of the ceramic material constituting the ceramic substrate.

[0051] In one embodiment of the present invention, the thermal conductivity of the non-sintered ceramic powder can be greater than or equal to the thermal conductivity of the ceramic material constituting the ceramic substrate.

[0052] In one embodiment of the invention, the non-sintered ceramic powder can be arranged with a thickness of, for example, 30 μm or more, but is not limited thereto; various thicknesses can be used as long as they exhibit stress absorption capacity.

[0053] The method for manufacturing the plate heating device of the present invention is characterized by comprising the following steps: A slot is formed to form a slot 42 for a heating wire on a release body 40 molded from the first ceramic powder; Fill the slot 42 for heating wire with a second ceramic powder 50 having a sintering temperature that is more than 50°C higher than that of the first ceramic powder. The heating wire is wired to arrange the heating wire 20 in a slot for the heating wire that is filled with the second ceramic powder 50; Laminating the first ceramic by coating and laminating the first ceramic powder onto a release body with the heating wires 20 wired on it, or laminating a release body 44 molded from the first ceramic powder; and The laminate of the first ceramic was sintered and laminated at a temperature higher than or equal to the sintering temperature of the first ceramic and lower than the sintering temperature of the second ceramic.

[0054] All the above information regarding plate heating devices also applies to the manufacturing method. Therefore, further details are omitted.

[0055] The first ceramic powder may include, but is not limited to, Al2O3, AlN, ALON, etc. Additionally, the second ceramic powder may include, but is not limited to, oxide-based, carbide-based, nitride-based, or boride-based ceramics, preferably MgO, WC, TaC, TiC, CNT, graphene, SiC, SiC whiskers, BN, TiN, ZrB2, TiB, etc.

[0056] In one embodiment of the present invention, the step of wiring the heating wire may be: arranging the heating wire 20 on the filled second ceramic powder 50; as shown in the figure. Figure 5 As shown in (c), the heating wire 20 is arranged to be partially embedded in the second ceramic powder 50; or as shown in (c) Figure 6 (c) and Figure 7 As shown in (c), the heating wire 20 is arranged to be integrally embedded in the second ceramic powder 50.

[0057] In one embodiment of the invention, in the step of wiring the heating wire, if the heating wire 20 is arranged on the filled second ceramic powder 50 or the heating wire 20 is arranged to be partially embedded in the second ceramic powder 50, then a step of coating the second ceramic powder to make the heating wire 20 entirely covered by the second ceramic powder may be performed before the step of laminating the first ceramic.

[0058] In one embodiment of the invention, during the step of forming the slot, the slot 42 may be configured to accommodate a heating wire according to the heating wire arrangement structure, such as... Figure 5 and Figure 6 As shown; slot 42 can be configured to accommodate two or more heating wires in each heating wire arrangement area, such as... Figure 8 As shown; or it can be sized to accommodate all heating wires, such as Figure 7 As shown.

[0059] In one embodiment of the invention, if the first ceramic powder is coated and laminated onto the release body of the heating wire 20, a mold can be used to perform the coating step and the sintering step.

[0060] In one embodiment of the present invention, the temperature above the sintering temperature of the first ceramic and below the sintering temperature of the second ceramic can be from 1600°C to 2000°C, preferably from 1650°C to 1750°C.

[0061] In the sintering case described above, the first ceramic powder or the release body molded from the first ceramic powder is sintered, while the second ceramic powder is not sintered and remains in a powder state, thus effectively absorbing the stress generated by the expansion of the heating wire.

[0062] In one embodiment of the invention, the plate heating device 100 may be in the shape of a circular plate and may also include a power cord for supplying power to the heating wire.

[0063] In one embodiment of the invention, the plate heating device 100 may further include an RF electrode located on the upper or lower surface of the heating wire. The RF electrode can be configured according to techniques known in the art.

[0064] In one embodiment of the present invention, such as Figure 9 As shown, the plate heating device 100 may further include a hollow support member 70, which is mounted on the lower part of the plate heating device 100 and supports the plate heating device 100. In this case, the power cord 80 is connected to the plate heating device 100 through the hollow portion of the support member 70, and may also be connected to the heating wire 20. The support member 70 may be manufactured according to shapes or structures known in the art.

[0065] The plate heating device 100 of the present invention can be used, for example, in semiconductor manufacturing processes, specifically for processes such as thin film deposition and patterning. Therefore, it may further include a chamber providing space for performing the process. Additionally, a nozzle may be further disposed within the chamber. The chamber and the nozzle can be configured in any manner known in the art.

[0066] The plate heating device 100 of the present invention may include, but is not limited to, known devices or equipment installed in semiconductor device manufacturing equipment.

[0067] The preferred embodiments of the present invention have been described in detail above, but the scope of the present invention is not limited thereto. Various modifications and improvements made by those skilled in the art using the basic concepts of the present invention as defined in the appended claims also fall within the scope of the present invention.

[0068] [Explanation of reference numerals in the attached figures]

[0069] 10: Ceramic substrate; 20: Heating wire

[0070] 30: Non-sintered ceramic powder; 40: Release body molded from the first ceramic powder

[0071] 42: Slot; 44: Release body molded from first ceramic powder

[0072] 50: Second ceramic powder; 70: Supporting component

[0073] 80: Power cord; 100: Plate heating device

Claims

1. A plate heating device, the plate heating device comprising: Ceramic substrate; as well as Heating wires embedded in the ceramic substrate. The non-sintered ceramic powder is positioned between the outer periphery of the heating wire and the ceramic substrate.

2. The plate heating device according to claim 1, wherein, The non-sintered ceramic powder is positioned continuously or intermittently along the heating line.

3. The plate heating device according to claim 2, wherein, Based on the cross-section of the heating wire, the non-sintered ceramic powder is located only between a localized outer peripheral portion and the ceramic substrate, or between the entire outer peripheral portion and the ceramic substrate.

4. The plate heating device according to claim 3, wherein, Based on the cross-section of the heating wire, the local outer peripheral portion is 20% to 90% of the outer peripheral portion.

5. The plate heating device according to claim 3, wherein, Based on the cross-section of the heating wire, the local outer peripheral portion is 50% to 90% of the outer peripheral portion.

6. The plate heating device according to claim 4, wherein, If, based on the cross-section of the heating wire, the non-sintered ceramic powder is located only between the localized outer peripheral portion and the ceramic substrate, then the non-sintered ceramic powder is filled from the bottom of the heating wire.

7. The plate heating device according to claim 1, wherein, The ceramic substrate or non-sintered ceramic powder is arranged between the heating wires.

8. The plate heating device according to claim 1, wherein, The non-sintered ceramic powder is a material having a sintering temperature that is at least 50°C higher than the sintering temperature of the ceramic material constituting the ceramic substrate.

9. The plate heating device according to claim 8, wherein, The non-sintered ceramic powder has a coefficient of thermal expansion that is less than or equal to the coefficient of thermal expansion of the ceramic material constituting the ceramic substrate.

10. The plate heating device according to claim 9, wherein, The non-sintered ceramic powder has a thermal conductivity greater than or equal to that of the ceramic material constituting the ceramic substrate.

11. The plate heating device according to claim 1, wherein, The non-sintered ceramic powder is arranged to have a thickness of more than 30 μm.

12. A method for manufacturing a plate heating device, the method comprising the following steps: A slot for the heating wire is formed on a release body molded from first ceramic powder; A second ceramic powder having a sintering temperature that is at least 50°C higher than that of the first ceramic powder is filled into the slot for the heating wire. The heating wire is wired into the slot for the heating wire that is filled with the second ceramic powder; The step of laminating the first ceramic is to laminate the first ceramic powder by coating the first ceramic powder onto a release body with wiring heating wires, or to laminate a release body molded from the first ceramic powder onto a release body with wiring heating wires. as well as The laminate of the first ceramic was sintered and laminated at a temperature higher than or equal to the sintering temperature of the first ceramic and lower than the sintering temperature of the second ceramic.

13. The method for manufacturing the plate heating device according to claim 12, wherein, The steps of wiring the heating wire are to arrange the heating wire on the filled second ceramic powder, arrange the heating wire to be partially embedded in the second ceramic powder, or arrange the heating wire to be entirely embedded in the second ceramic powder.

14. The method for manufacturing the plate heating device according to claim 13, wherein, In the step of wiring the heating wire, if the heating wire is arranged on the filled second ceramic powder or arranged to be partially embedded in the second ceramic powder, then a step of coating the second ceramic powder to cover the entire heating wire with the second ceramic powder is performed before the step of laminating the first ceramic.

15. The method for manufacturing the plate heating device according to claim 12, wherein, In the step of forming the slot, the slot is formed to have a size that allows one heating wire to be arranged according to the heating wire arrangement configuration, the slot is formed to have a size that allows two or more heating wires to be arranged in each heating wire arrangement area, or the slot is formed to have a size that allows all heating wires to be arranged.

Citation Information

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