A semiconductor material defect repair device and method based on pulsed electron irradiation

Abstract

This invention relates to a device and method for repairing defects in semiconductor materials, specifically a device and method for repairing defects in semiconductor materials based on pulsed electron irradiation. It solves the technical problems of existing semiconductor material defect repair methods, which easily introduce thermal damage and secondary defects, leading to poor repair results, or lack of in-situ, real-time monitoring and feedback of repair effects. This invention utilizes a high-energy, short-pulse electron beam generated by a pulsed electron beam source to irradiate semiconductor materials. This allows for the injection of a high-energy-density pulsed electron beam in a very short time, avoiding the thermal damage and secondary defects caused by traditional high-temperature annealing and steady-state electron beams, significantly improving the repair effect. Simultaneously, a repair effect monitoring system acquires real-time changes in the microstructure and optical properties of the semiconductor material during the repair process, enabling in-situ, real-time evaluation of the repair effect. Based on the evaluation results, the parameters of the pulsed electron beam source can be dynamically adjusted to form a closed-loop control, significantly improving repair efficiency, accuracy, and success rate.

Description

Technical Field

[0001] This invention relates to a device and method for repairing defects in semiconductor materials, specifically to a device and method for repairing defects in semiconductor materials based on pulsed electron irradiation. Background Technology

[0002] Semiconductor materials are a core foundation for modern information technology, optoelectronics, and new energy. In recent years, novel wide-bandgap semiconductor materials, such as gallium nitride and silicon carbide, have shown great potential in cutting-edge fields like power electronic devices, high-frequency communications, solid-state lighting, and deep-ultraviolet detection due to their superior properties, including high breakdown field strength, high electron saturation velocity, and high temperature resistance. However, these novel wide-bandgap semiconductor materials generate numerous intrinsic defects such as point defects, dislocations, and stacking faults during growth due to lattice mismatch and other factors. Simultaneously, ion implantation, a key process for selective doping, inevitably causes irradiation damage to the material lattice while introducing desired impurities, forming point defects and defect clusters, severely limiting the performance and yield of semiconductor devices. Therefore, developing efficient and controllable defect repair technologies, especially for repairing irradiation damage introduced by processes such as ion implantation, is crucial for improving the performance of semiconductor devices and realizing industrial applications.

[0003] Currently, the main methods for repairing defects in semiconductor materials include high-temperature annealing and electron beam homogenization. High-temperature annealing is a common method for repairing defects in semiconductor materials, but excessively high temperatures can lead to semiconductor material decomposition, impurity diffusion, and intensified interface reactions, and may even introduce new thermal defects, making it difficult to meet the requirements of heat-sensitive processes in precision device manufacturing. For novel wide-bandgap semiconductor materials, their high melting points also make high-temperature process control more complex. Although electron beam homogenization can provide energy to promote defect repair, the relatively long exposure time of traditional continuous or long-pulse electron beams can easily lead to significant thermal effect accumulation, potentially causing local overheating, melting, or secondary defects in the sample. In addition, the repair process often lacks in-situ, real-time monitoring and feedback of the repair effect. Summary of the Invention

[0004] The purpose of this invention is to solve the technical problems that existing semiconductor material defect repair methods are prone to introducing thermal damage and secondary defects, resulting in poor repair effects, or lack of in-situ, real-time repair effect monitoring and feedback. The invention provides a semiconductor material defect repair device and method based on pulsed electron irradiation.

[0005] To achieve the above objectives, the technical solution adopted by the present invention is as follows: A semiconductor material defect repair device based on pulsed electron irradiation is characterized by including a vacuum chamber, and a pulsed electron beam source, a beam current monitoring and feedback system, a three-dimensional precision sample stage, a temperature controller and a temperature monitoring unit disposed in the vacuum chamber, as well as an electron beam scanning control system, a repair effect monitoring system and a data processing and control system. The pulsed electron beam source is used to generate a small-spot, high-energy pulsed electron beam, thereby repairing the semiconductor material to be repaired by pulsed electron irradiation. The three-dimensional precision sample stage is set on the emission path of the pulsed electron beam, and the temperature controller is set on the three-dimensional precision sample stage, which is used to support the semiconductor material to be repaired; the three-dimensional precision sample stage is used to adjust the position and orientation of the semiconductor material to be repaired, and the temperature controller is used to regulate the temperature of the semiconductor material to be repaired. The output of the temperature monitoring unit is connected to the input of the data processing and control system, and is used to measure the temperature of the semiconductor material to be repaired. The beam monitoring feedback system is placed on a three-dimensional precision sample stage during beam testing. Its output is connected to the input of the data processing and control system. The beam monitoring feedback system is used to perform beam testing on the pulsed electron beam. The output terminal of the electron beam scanning control system is connected to the control terminal of the pulsed electron beam source, and is used to adjust the parameters of the pulsed electron beam source, thereby adjusting the parameters, scanning area and scanning parameters of the pulsed electron beam. The repair effect monitoring system is set on one side of the three-dimensional precision sample stage, and its output end is connected to the input end of the data processing and control system. The repair effect monitoring system is used to collect optical information of the semiconductor material to be repaired, thereby realizing a quantitative evaluation of the repair effect. The output of the data processing and control system is connected to the control terminals of the three-dimensional precision sample stage, the temperature controller, and the input terminal of the electron beam scanning control system, respectively.

[0006] Furthermore, it also includes a vacuum transfer device installed on one side wall of the vacuum chamber. One end of the vacuum transfer device extends into the vacuum chamber to connect the vacuum chamber with the external environment, thereby transferring the semiconductor material to be repaired from the external environment to the vacuum chamber while ensuring the vacuum level in the vacuum chamber.

[0007] Furthermore, the repair effect monitoring system includes a microscope system and a spectrometer, as well as an optical fiber coupling assembly connecting the microscope system and the spectrometer; The microscope system is located inside the vacuum chamber and is set on one side of the three-dimensional precision sample stage. The spectrometer is located outside the vacuum chamber, and its output is connected to the input of the data processing and control system.

[0008] Furthermore, it also includes a protective sleeve; one end of the protective sleeve is disposed on the side wall of the vacuum chamber near the three-dimensional precision sample stage, and the other end extends into the vacuum chamber near the three-dimensional precision sample stage, and the microscope system is disposed inside the other end of the protective sleeve; The protective sleeve adopts a vacuum-sealed structure, comprising multiple layers of shielding material stacked together.

[0009] Furthermore, the temperature monitoring unit includes an infrared thermometer and a contact thermistor. The infrared thermometer is placed at any position within the vacuum chamber, and the contact thermistor is placed on the semiconductor material to be repaired. The output terminals of both are connected to the input terminals of the data processing and control system, respectively.

[0010] Furthermore, the three-dimensional precision sample stage is driven by a precision motor; The spectrometer is a Raman spectrometer or a fluorescence spectrometer; The beam monitoring feedback system includes a Faraday cup.

[0011] Furthermore, the temperature of the temperature controller is adjustable within the range of 80 K to 800 K; The pulsed electron beam source is a field emission electron gun, and the energy of the high-energy pulsed electron beam generated by it is adjustable in the range of 50 keV to 300 keV, and the pulse width is adjustable in the range of 1 μs to 1 s. The vacuum level of the vacuum chamber is better than 10. -5 Pa; The scanning step size accuracy of the electron beam scanning control system is greater than or equal to 0.1 nm.

[0012] This invention also provides a method for repairing defects in semiconductor materials based on pulsed electron irradiation, employing the aforementioned device for repairing defects in semiconductor materials based on pulsed electron irradiation, characterized by the following steps: Step 1: Based on the type of defect to be repaired, the target repair depth, and the characteristics of the semiconductor material to be repaired, set the target repair temperature, the target parameters of the pulsed electron beam, and the scanning area and scanning parameters of the pulsed electron beam, and input them into the data processing and control system. Step 2: Place the beam current monitoring feedback system on the three-dimensional precision sample stage, start the pulsed electron beam source, and use the beam current monitoring feedback system to perform beam current testing on the pulsed electron beam generated by the pulsed electron beam source. Send the beam current test results to the data processing and control system. The data processing and control system generates control signals based on the beam current test results and the target parameters of the pulsed electron beam, and sends them to the electron beam scanning control system. The electron beam scanning control system adjusts the parameters of the pulsed electron beam source according to the control signals so that the beam current test results of the pulsed electron beam generated by the pulsed electron beam source reach the target parameters of the pulsed electron beam. Then, turn off the pulsed electron beam source and remove the beam current monitoring feedback system. Step 3: Pre-treat the semiconductor material to be repaired, then send it into the vacuum chamber and fix it on the temperature controller; Step 4: The data processing and control system controls the three-dimensional precision sample stage to adjust the position and orientation of the semiconductor material to be repaired. Then, the repair effect monitoring system collects the original optical information of the semiconductor material to be repaired and sends it to the data processing and control system. Step 5: Start the pulsed electron beam source and temperature controller. The data processing and control system controls the pulsed electron beam generated by the pulsed electron beam source through the electron beam scanning control system, and performs pulsed electron irradiation on the semiconductor material to be repaired according to the set scanning area and scanning parameters. During pulsed electron irradiation, the temperature monitoring unit measures the real-time temperature of the semiconductor material to be repaired and sends it to the data processing and control system. The data processing and control system controls the temperature controller to adjust the temperature of the semiconductor material to be repaired according to the real-time temperature of the semiconductor material to be repaired, so that it reaches the target repair temperature. At the same time, the repair effect monitoring system periodically collects the real-time optical information of the semiconductor material to be repaired and sends it to the data processing and control system to evaluate the repair effect. If the repair effect obtained from two consecutive evaluations shows a downward trend, the parameters of the pulsed electron beam source are adjusted, thereby adjusting the parameters of the pulsed electron beam, the scanning area and the scanning parameters, and continuing to irradiate the semiconductor material to be repaired with pulsed electrons until the irradiation dose of the high pulsed electron beam reaches the preset irradiation dose, or the repair effect meets the repair requirements, or the number of times the pulsed electron beam scans the set scanning area reaches the preset number of times. Step 6: Turn off the pulsed electron beam source and temperature controller to stop pulsed electron irradiation. Then, remove the repaired semiconductor material and perform structural characterization and performance testing on it. If the structural characterization and performance testing results meet the repair requirements, the defect repair of the semiconductor material is completed. Otherwise, adjust the target repair temperature, the target parameters of the pulsed electron beam, and the scanning area and scanning parameters of the pulsed electron beam, and input them into the data processing and control system. Then return to step 2.

[0013] Furthermore, in step 4, the three-dimensional precision sample stage adjusts the orientation of the semiconductor material to be repaired to a 45-degree angle with the horizontal plane; In step 6, the specific method for structural characterization is to observe the elimination or reduction of microscopic defects in the repaired semiconductor material using a transmission electron microscope. In step 6, the specific method for performance testing is as follows: using the Hall effect to test the changes in electrical parameters of the repaired semiconductor material.

[0014] Furthermore, in step 1, the target parameters of the pulsed electron beam include energy, beam intensity, and pulse width, and the scanning parameters include scanning path, scanning step size, and scanning speed.

[0015] Compared with the prior art, the present invention has the following beneficial effects: 1. The present invention provides a semiconductor material defect repair device based on pulsed electron irradiation. It uses a high-energy, short-pulse electron beam generated by a pulsed electron beam source to irradiate semiconductor materials. It can inject a high-energy-density pulsed electron beam in a very short time, promote the dynamic recombination of atoms in the defect region of the semiconductor material, significantly reduce the heat accumulation effect, avoid the thermal damage and secondary defect risks caused by traditional high-temperature annealing and steady-state electron beam, and significantly improve the repair effect. 2. The present invention provides a semiconductor material defect repair device based on pulsed electron irradiation. It utilizes a repair effect monitoring system to perform in-situ detection of the repair effect. It can acquire changes in the microstructure and optical properties of the semiconductor material in real time during the repair process, realize in-situ and real-time evaluation of the repair effect, and dynamically adjust the parameters of the pulsed electron beam source based on the evaluation results to form a closed-loop control, which significantly improves the repair efficiency, accuracy and success rate. Attached Figure Description

[0016] Figure 1 This is a structural diagram of the device according to an embodiment of the present invention (the beam monitoring feedback system and the data processing and control system are not shown). Figure 2 This is a flowchart of a method according to an embodiment of the present invention; The annotations in the attached figures are explained as follows: 1-Vacuum chamber, 2-Pulsed electron beam source, 3-Electron beam scanning control system, 4-Three-dimensional precision sample stage, 5-Temperature controller, 6-Semiconductor material to be repaired, 7-Vacuum transfer device, 8-Microscope system, 9-Spectrometer, 10-Fiber optic coupling assembly, 11-Protective sleeve, 12-Infrared thermometer, 13-Contact thermistor. Detailed Implementation

[0017] The following detailed description, in conjunction with the accompanying drawings and specific embodiments, provides a more comprehensive overview of the semiconductor material defect repair device and method based on pulsed electron irradiation proposed in this invention. Those skilled in the art should understand that these embodiments are merely illustrative of the technical principles of this invention and are not intended to limit the scope of protection of this invention.

[0018] A semiconductor material defect repair device based on pulsed electron irradiation, such as Figure 1 As shown, the system includes a vacuum chamber 1, and within the vacuum chamber 1 are a pulsed electron beam source 2, a beam current monitoring and feedback system, a three-dimensional precision sample stage 4, a temperature controller 5, a temperature monitoring unit, a vacuum transfer device 7, and a protective sleeve 11, as well as an electron beam scanning control system 3, a repair effect monitoring system, and a data processing and control system. The repair effect monitoring system includes a microscope system 8, a spectrometer 9, and an optical fiber coupling assembly 10. The temperature monitoring unit includes an infrared thermometer 12 and a contact thermistor 13.

[0019] A pulsed electron beam source 2 is used to generate a small-spot, high-energy pulsed electron beam, thereby repairing the semiconductor material 6 to be repaired through pulsed electron irradiation. A three-dimensional precision sample stage 4 is positioned in the emission path of the high-energy pulsed electron beam, and a temperature controller 5 is mounted on the three-dimensional precision sample stage 4, which is used to support the semiconductor material 6 to be repaired. The three-dimensional precision sample stage 4 is used to adjust the position and orientation of the semiconductor material 6 to be repaired, and the temperature controller 5 regulates the temperature of the semiconductor material 6 to be repaired. The three-dimensional precision sample stage 4 can be precisely displaced in the X, Y, and Z dimensions to achieve the positioning of different regions of the semiconductor material 6 to be repaired.

[0020] The vacuum transfer device 7 is installed on one side wall of the vacuum chamber 1, with one end extending into the vacuum chamber 1. The vacuum transfer device 7 is used to connect the vacuum chamber 1 with the external environment, thereby transferring the semiconductor material 6 to be repaired from the external environment to the vacuum chamber 1 while ensuring the vacuum level inside the vacuum chamber 1.

[0021] An infrared thermometer 12 is positioned at any location within the vacuum chamber 1, and a contact thermistor 13 is mounted on the semiconductor material 6 to be repaired. The outputs of both are connected to the inputs of the data processing and control system. The infrared thermometer 12 and the contact thermistor 13 are used to measure the temperature of the semiconductor material 6 to be repaired via non-contact and contact methods, respectively. They are mutually calibrated to ensure measurement accuracy.

[0022] The beam current monitoring and feedback system is placed on the three-dimensional precision sample stage 4 during beam current testing. Its output is connected to the input of the data processing and control system. The beam current monitoring and feedback system includes a Faraday cup for testing the high-energy pulsed electron beam. The output of the electron beam scanning control system 3 is connected to the control terminal of the pulsed electron beam source 2, and is used to adjust the parameters of the pulsed electron beam source 2, thereby adjusting the parameters, scanning area, and scanning parameters of the pulsed electron beam. The electron beam scanning control system 3 can control the pulsed electron beam generated by the pulsed electron beam source 2 to move relative to the surface of the semiconductor material 6 to be repaired.

[0023] The protective sleeve 11 adopts a vacuum-sealed structure, comprising multiple layers of shielding material stacked together. One end of the protective sleeve 11 is located on the side wall of the vacuum chamber 1 near the three-dimensional precision sample stage 4, and the other end extends into the vacuum chamber 1 near the three-dimensional precision sample stage 4. The microscope system 8 is located inside the other end of the protective sleeve 11. The spectrometer 9 is located outside the vacuum chamber 1. The microscope system 8 and the spectrometer 9 are connected via an optical fiber coupling assembly 10. The output of the spectrometer 9 is connected to the input of the data processing and control system.

[0024] The spectrometer 9 is equipped with a light source. The test light generated by the light source is transmitted to the semiconductor material 6 to be repaired through the microscope system 8 via the fiber optic coupling component 10. After being reflected by the semiconductor material 6, the test light carries its optical information and is transmitted to the spectrometer 9 via the microscope system 8 and the fiber optic coupling component 10 for collection. This enables the measurement of the optical information of the semiconductor material 6 to be repaired, and then the quantitative evaluation of the repair effect is achieved through the changes in the spectral characteristic parameters.

[0025] The protective sleeve 11 achieves airtight isolation from the vacuum chamber 1 through a vacuum sealing structure. At the same time, the multi-layer shielding structure effectively protects against high-energy particle impacts from the pulsed electron beam, protecting the optical components in the microscope system 8 from radiation damage and ensuring its long-term stable working performance.

[0026] The output of the data processing and control system is connected to the control terminals of the pulsed electron beam source 2, the three-dimensional precision sample stage 4, the temperature controller 5, and the input terminal of the electron beam scanning control system 3, respectively. The data processing and control system is used to realize parameter setting, automated scanning, data acquisition, real-time feedback control, and monitoring of the repair process.

[0027] In this embodiment, the vacuum level of vacuum chamber 1 is better than 10. -5Pa ensures stable transmission of the pulsed electron beam and prevents contamination of the semiconductor material 6 to be repaired. The pulsed electron beam source 2 is a field emission electron gun, whose high-energy pulsed electron beam energy is adjustable from 50 keV to 300 keV, and the pulse width is adjustable from 1 μs to 1 s. The spectrometer 9 is a Raman spectrometer or a fluorescence spectrometer, which can provide key information such as the material's crystal structure, chemical composition, and stress state. The three-dimensional precision sample stage 4 is driven by a precision motor, and the temperature of the temperature controller 5 is adjustable from 80 K to 800 K. The electron beam scanning control system 3 has a scanning step accuracy greater than or equal to 0.1 nm, including grating scanning mode.

[0028] This embodiment also provides a semiconductor material defect repair method based on pulsed electron irradiation, employing the aforementioned semiconductor material defect repair device based on pulsed electron irradiation, such as... Figure 2 As shown, it includes the following steps: Step 1: Based on the target defect type, target repair depth, and characteristics of the semiconductor material 6 to be repaired, set the target repair temperature, pulsed electron beam target parameters, and the scanning area and scanning parameters of the pulsed electron beam, and input them into the data processing and control system. The pulsed electron beam target parameters include energy, beam current intensity, and pulse width; the scanning parameters include scanning path, scanning step size, and scanning speed.

[0029] Step 2: Place the beam current monitoring feedback system on the three-dimensional precision sample stage 4, start the pulsed electron beam source 2, use the beam current monitoring feedback system to perform beam current testing on the pulsed electron beam generated by the pulsed electron beam source 2, and send the beam current test results to the data processing and control system; the data processing and control system generates control signals based on the beam current test results and the target parameters of the pulsed electron beam, and sends them to the electron beam scanning control system 3; the electron beam scanning control system 3 adjusts the parameters of the pulsed electron beam source 2 according to the control signals, so that the parameters of the pulsed electron beam generated by the pulsed electron beam source 2 reach the target parameters of the pulsed electron beam, then shuts down the pulsed electron beam source 2 and removes the beam current monitoring feedback system.

[0030] Step 3: Clean the surface of the semiconductor material 6 to be repaired to remove organic contaminants, particles and oxide layer, and then send it into the vacuum chamber 1 through the vacuum transfer device 7 and fix it on the temperature controller 5.

[0031] Step 4: The data processing and control system controls the three-dimensional precision sample stage 4 to adjust the position and orientation of the semiconductor material 6 to be repaired. Then, the repair effect monitoring system collects the original optical information of the semiconductor material 6 to be repaired and sends it to the data processing and control system.

[0032] In step 4, during in-situ detection, the orientation of the semiconductor material 6 to be repaired is adjusted to be at a 45-degree angle to the horizontal plane. In other embodiments, during non-in-situ detection, to improve detection efficiency, during pulsed electron irradiation, when the repair effect monitoring system collects the optical information of the semiconductor material 6 to be repaired, the semiconductor material 6 to be repaired is parallel to the horizontal plane; after the irradiation dose of the high-energy pulsed electron beam reaches the preset irradiation dose, when the repair effect monitoring system collects the optical information of the semiconductor material 6 to be repaired, the semiconductor material 6 to be repaired is at a 90-degree angle to the horizontal plane.

[0033] Step 5: Turn on the pulsed electron beam source 2 and temperature controller 5. The data processing and control system controls the pulsed electron beam generated by the pulsed electron beam source 2 through the electron beam scanning control system 3, and performs pulsed electron irradiation on the semiconductor material 6 to be repaired according to the set scanning area and scanning parameters.

[0034] During pulsed electron irradiation, the infrared thermometer 12 and the contact thermistor 13 record the real-time temperature of the semiconductor material 6 to be repaired and send it to the data processing and control system. The data processing and control system controls the temperature controller 5 to adjust the temperature of the semiconductor material 6 to be repaired according to the real-time temperature of the semiconductor material 6 to be repaired, so that it reaches the target repair temperature. At the same time, the spectrometer 9 periodically collects the real-time optical information of the semiconductor material 6 to be repaired and sends it to the data processing and control system to evaluate the repair effect. If the repair effect obtained from two consecutive evaluations shows a downward trend, the parameters of the pulsed electron beam source 2 are adjusted, thereby adjusting the parameters of the pulsed electron beam, the scanning area and the scanning parameters, and the semiconductor material 6 to be repaired continues to be irradiated with pulsed electrons until the irradiation dose of the high pulsed electron beam reaches the preset irradiation dose, or the repair effect meets the repair requirements, or the number of times the pulsed electron beam scans the set scanning area reaches the preset number of times.

[0035] Step 6: Turn off the pulsed electron beam source 2 and temperature controller 5 to stop pulsed electron irradiation. Then, take out the repaired semiconductor material to be repaired and perform structural characterization and performance testing on it. If the structural characterization and performance test results meet the repair requirements, the defect repair of the semiconductor material is completed. Otherwise, adjust the target repair temperature, the target parameters of the pulsed electron beam, and the scanning area and scanning parameters of the pulsed electron beam, and input them into the data processing and control system. Then return to step 2.

[0036] The specific method for structural characterization is as follows: transmission electron microscopy is used to observe the elimination or reduction of microscopic defects in the repaired semiconductor material 6. The specific method for performance testing is as follows: the changes in electrical parameters of the repaired semiconductor material 6 are tested using the Hall effect.

[0037] This invention utilizes a high-energy, short-pulse electron beam to irradiate semiconductor materials. By precisely controlling the energy, current intensity, pulse width, scanning parameters, and temperature of the semiconductor material, high energy density is injected into the material's crystal lattice in a very short time, causing dynamic atomic recombination in the irradiated damage region and achieving effective defect repair. Simultaneously, a repair effect monitoring system is employed to evaluate the repair effect in real time during electron beam irradiation, improving the controllability, efficiency, and accuracy of the repair. This provides a promising new approach for semiconductor material repair, especially for ion implantation damage, and is particularly suitable for repairing semiconductor materials such as Si, GaAs, SiC, GaN, or Ga2O3.

Claims

1. A device for repairing defects in a semiconductor material based on pulsed electron irradiation, characterized in that it comprises: The application relates to a semiconductor material repairing device, which comprises a vacuum chamber (1), a pulsed electron beam source (2), a beam monitoring feedback system, a three-dimensional precision sample table (4), a temperature controller (5) and a temperature monitoring unit arranged in the vacuum chamber (1), an electron beam scanning control system (3), a repairing effect monitoring system and a data processing and control system. The pulsed electron beam source (2) is used for generating a pulsed electron beam so as to repair a semiconductor material (6) to be repaired through pulsed electron irradiation. The three-dimensional precision sample table (4) is arranged on the outgoing path of the pulsed electron beam, and the temperature controller (5) is arranged on the three-dimensional precision sample table (4) and used for carrying the semiconductor material (6) to be repaired; the three-dimensional precision sample table (4) is used for adjusting the position and posture of the semiconductor material (6) to be repaired, and the temperature controller (5) is used for regulating the temperature of the semiconductor material (6) to be repaired. The output end of the temperature monitoring unit is connected with the input end of the data processing and control system, and the temperature monitoring unit is used for measuring the temperature of the semiconductor material (6) to be repaired. The beam monitoring feedback system is arranged on the three-dimensional precision sample table (4) when the beam is tested, and the output end of the beam monitoring feedback system is connected with the input end of the data processing and control system; the beam monitoring feedback system is used for testing the beam of the pulsed electron beam. The output end of the electron beam scanning control system (3) is connected with the control end of the pulsed electron beam source (2), which is used for adjusting the parameters of the pulsed electron beam source (2) so as to adjust the parameters, scanning area and scanning parameters of the pulsed electron beam. The output end of the repairing effect monitoring system is connected with the input end of the data processing and control system, and the repairing effect monitoring system is used for collecting the optical information of the semiconductor material (6) to be repaired so as to realize quantitative evaluation of the repairing effect. The output end of the data processing and control system is connected with the control end of the three-dimensional precision sample table (4) and the temperature controller (5) and the input end of the electron beam scanning control system (3) respectively.

2. The apparatus for repairing defects in a semiconductor material based on pulsed electron irradiation according to claim 1, characterized in that: The vacuum transfer device (7) is arranged on one side wall of the vacuum chamber (1), one end of the vacuum transfer device (7) extends into the vacuum chamber (1) and is used for connecting the vacuum chamber (1) with the external environment, so that the semiconductor material (6) to be repaired is transferred from the external environment to the vacuum chamber (1) under the premise of ensuring the vacuum degree in the vacuum chamber (1).

3. The apparatus for repairing defects in a semiconductor material based on pulsed electron irradiation according to claim 2, characterized in that: The repairing effect monitoring system comprises a microscope system (8) and a spectrum tester (9) and a fiber coupling assembly (10) connecting the microscope system (8) and the spectrum tester (9). The microscope system (8) is arranged in the vacuum chamber (1) and on one side of the three-dimensional precision sample table (4), and the spectrum tester (9) is arranged outside the vacuum chamber (1) and the output end of the spectrum tester (9) is connected with the input end of the data processing and control system.

4. The apparatus for repairing defects in a semiconductor material based on pulsed electron irradiation according to claim 3, characterized in that: Further comprising a protective sleeve (11); one end of the protective sleeve (11) is arranged on the side wall of the vacuum chamber (1) near the three-dimensional precision sample table (4), and the other end extends into the vacuum chamber (1) near the three-dimensional precision sample table (4), and the microscope system (8) is arranged inside the other end of the protective sleeve (11); The protective sleeve (11) adopts a vacuum sealing structure and comprises multiple layers of shielding materials arranged in layers.

5. The apparatus for repairing defects in a semiconductor material based on pulsed electron irradiation according to claim 4, characterized in that: The temperature monitoring unit comprises an infrared thermometer (12) and a contact type thermistor (13), the infrared thermometer (12) is arranged at any position in the vacuum chamber (1), the contact type thermistor (13) is arranged on the semiconductor material to be repaired (6), and the output ends of the two are respectively connected with the input end of the data processing and control system.

6. The apparatus for repairing defects in a semiconductor material based on pulsed electron irradiation according to claim 5, characterized in that: The three-dimensional precision sample table (4) is driven by a precision motor; The spectrum tester (9) is a Raman spectrometer or a fluorescence spectrometer; The beam monitoring feedback system comprises a Faraday cup.

7. The apparatus for pulsed electron beam based defect repair of semiconductor material according to claim 6, wherein: The temperature of the temperature controller (5) is adjustable in the range of 80 K to 800 K; The pulsed electron beam source (2) is a field emission electron gun, the energy of the high-energy pulsed electron beam generated thereby is adjustable in the range of 50 keV to 300 keV, and the pulse width is adjustable in the range of 1 μs to 1 s; The vacuum chamber (1) has a vacuum degree better than 10 -5 Pa; The scanning step accuracy of the electron beam scanning control system (3) is greater than or equal to 0.1 nm.

8. A method for repairing defects in a semiconductor material based on pulsed electron irradiation, using a device for repairing defects in a semiconductor material based on pulsed electron irradiation according to any one of claims 1 to 7, characterized in that, The method comprises the following steps: Step 1, according to the target repair defect type, the target repair depth and the characteristics of the semiconductor material to be repaired (6), setting the target repair temperature, the target parameters of the pulsed electron beam, and the scanning area and scanning parameters of the pulsed electron beam, and inputting them into the data processing and control system; Step 2, placing the beam monitoring feedback system on the three-dimensional precision sample table (4), starting the pulsed electron beam source (2), testing the pulsed electron beam generated by the pulsed electron beam source (2) by using the beam monitoring feedback system, and sending the beam test result to the data processing and control system; the data processing and control system generates an electronic control signal according to the beam test result and the target parameters of the pulsed electron beam, and sends it to the electron beam scanning control system (3); the electron beam scanning control system (3) adjusts the parameters of the pulsed electron beam source (2) according to the control signal, so that the beam test result of the pulsed electron beam generated by the pulsed electron beam source (2) reaches the target parameters of the pulsed electron beam, then the pulsed electron beam source (2) is closed, and the beam monitoring feedback system is removed; Step 3, pretreating the semiconductor material to be repaired (6), then sending it into the vacuum chamber (1) and fixing it on the temperature controller (5); Step 4, the data processing and control system controls the three-dimensional precision sample table (4) to adjust the position and posture of the semiconductor material to be repaired (6), then uses the repair effect monitoring system to collect the original optical information of the semiconductor material to be repaired (6), and sends it to the data processing and control system; Step 5: Start the pulsed electron beam source (2) and temperature controller (5). The data processing and control system controls the pulsed electron beam generated by the pulsed electron beam source (2) through the electron beam scanning control system (3) to irradiate the semiconductor material (6) to be repaired with pulsed electrons according to the set scanning area and scanning parameters. During the pulsed electron irradiation process, the temperature monitoring unit measures the real-time temperature of the semiconductor material (6) to be repaired and sends it to the data processing and control system. The data processing and control system controls the temperature controller (5) to adjust the temperature of the semiconductor material (6) to be repaired according to the real-time temperature of the semiconductor material (6) to reach the target repair temperature. At the same time, the repair effect monitoring system periodically collects the real-time optical information of the semiconductor material (6) to be repaired and sends it to the data processing and control system to evaluate the repair effect. If the repair effect obtained by two adjacent evaluations shows a downward trend, the parameters of the pulsed electron beam source (2) are adjusted, thereby adjusting the parameters of the pulsed electron beam, the scanning area and the scanning parameters, and the semiconductor material (6) to be repaired is irradiated with pulsed electrons until the irradiation dose of the high pulsed electron beam reaches the preset irradiation dose, or the repair effect meets the repair requirements, or the number of times the pulsed electron beam scans the set scanning area reaches the preset number. Step 6: Turn off the pulsed electron beam source (2) and temperature controller (5), stop the pulsed electron irradiation, then take out the repaired semiconductor material to be repaired, and perform structural characterization and performance testing on it. If the structural characterization and performance testing results meet the repair requirements, the defect repair of the semiconductor material is completed. Otherwise, adjust the target repair temperature, pulsed electron beam target parameters, and pulsed electron beam scanning area and scanning parameters, and input them into the data processing and control system, then return to step 2.

9. The method of claim 8, wherein the method is performed by a system comprising: a) a pulsed electron beam source; b) a vacuum chamber; c) a substrate holder; d) a controller; and e) a computer system. In step 4, the three-dimensional precision sample stage (4) adjusts the orientation of the semiconductor material (6) to be repaired to be at a 45-degree angle with the horizontal plane; In step 6, the specific method for structural characterization is to observe the elimination or reduction of microscopic defects in the repaired semiconductor material (6) using a transmission electron microscope. In step 6, the specific method for performance testing is to use the Hall effect to test the changes in electrical parameters of the repaired semiconductor material (6).

10. A method for repairing defects in a semiconductor material based on pulsed electron irradiation according to claim 8 or 9, characterized in that: In step 1, the target parameters of the pulsed electron beam include energy, beam intensity and pulse width, and the scanning parameters include scanning path, scanning step size and scanning speed.

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