Groove type power device with back source electrode structure and preparation method thereof

By employing a trench-type power device with a back-source structure in the vertical power MOSFET, the problems of heat dissipation and parasitic inductance are solved, achieving high-density integration and low-resistance contact, improving the device's heat dissipation and current handling capabilities, and making it suitable for high-power, high-frequency applications.

CN122121198APending Publication Date: 2026-05-29深圳市创飞芯源半导体有限公司
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Patent Information

Application Number
CN202610069716.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-01-20
Publication Date
2026-05-29

AI Technical Summary

Technical Problem

Existing vertical power MOSFETs suffer from heat dissipation bottlenecks and high parasitic inductance, making it difficult to achieve high-density integration of the gate and drain and low-resistance contact of the source on the back side.

Method used

The trench power device with a back-source structure forms a P-type body region and an N-type drift region on an N-type substrate, etches a trench to form a gate layer, integrates the drain and gate on the front side, forms a source via on the back side and deposits the source, and optimizes the current path and heat dissipation structure.

Benefits of technology

It improves the heat dissipation and power density of the device, reduces parasitic inductance and resistance, enhances current handling capability and device performance, and is suitable for high-power, high-frequency applications.

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Abstract

The invention provides a trench-type power device with a back source electrode structure and a preparation method thereof. The preparation method comprises the following steps: forming a P-type body region and an N-type drift region on the surface layer of an N-type substrate; forming a groove, wherein the groove extends into the N-type substrate from the P-type body region; forming a gate dielectric layer on the surface of the groove, and filling a gate layer in the groove; forming an isolation layer, and forming a drain electrode through hole in the isolation layer; performing N-type ion implantation on the drain electrode through hole to form an N-type drain region in the N-type drift region; forming a drain electrode; etching the back surface of the N-type substrate to form a source electrode through hole, wherein the P-type body region is exposed out of the source electrode through hole; and depositing a source electrode on the back surface of the N-type substrate and in the source electrode through hole, wherein the source electrode is connected with the N-type substrate and the P-type body region. The drain electrode and the grid electrode are integrated on the front face of the device, the trench gate structure is adopted to improve the unit density and the channel control capability, the source electrode is connected with the P-type body region through back deep groove contact, the source electrode contact resistance is effectively reduced, and the heat dissipation capability is improved.
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