Packaging substrate, power module packaging structure and driving circuit module heat dissipation device

Abstract

The utility model provides a packaging substrate, a power module packaging structure and a driving circuit module heat dissipation device. The packaging substrate comprises an upper ceramic layer, a semiconductor layer and a lower ceramic layer which are connected in sequence. The semiconductor layer comprises a plurality of unit bodies, and the unit bodies comprise N-type semiconductors and P-type semiconductors; the N-type semiconductors and the P-type semiconductors of the unit bodies are connected in series through a first interconnection metal layer, and the unit bodies are connected through a second interconnection metal layer; the first interconnection metal layer and the second interconnection metal layer are arranged on different ceramic layers; the top surface of the upper ceramic layer is provided with an interconnection circuit copper layer used for being connected with a power module. According to the packaging substrate, heat dissipation of the power module installed on the packaging substrate can be achieved based on the Peltier effect, the heat dissipation efficiency can be improved, the packaging substrate can replace a DBC substrate and an AMB substrate to be used for packaging the power module, a bottom plate in a conventional heat dissipation structure can be omitted, and simplification of the packaging structure, reduction of the thickness of the heat dissipation structure and shortening of a heat conduction path are facilitated.

Description

Technical Field

[0001] The utility model relates to the field of semiconductor power technology, in particular to a packaging substrate, a power module packaging structure and a driving circuit module heat dissipation device. Background Art

[0002] The drive circuit module is a power electronic conversion device, which usually refers to the integration of IGBT / MOS and other devices on a substrate, and then the current input and output terminals and signal terminals are led out, and a small voltage is used to control the high voltage and large current on and off. It has the advantages of high operating voltage, large output current, small switching loss, fast on and off speed, high operating frequency, and large component capacity. The substrate plays a key role in the drive circuit module. When encapsulated, the substrate has the functions of mechanical interconnection and electrical conduction.

[0003] The typical packaging structure of the drive circuit module is as follows: Figure 1 As shown, the power module is welded on the substrate, the substrate is welded on the bottom plate, and the bottom plate is connected to the heat sink through a thermal grease layer. The heat generated by the power module is mainly transferred through the substrate and the heat sink. For this reason, the material used for the substrate needs to have excellent thermal conductivity and resistance to thermal shock, and at the same time, the dielectric constant should be low to avoid stray inductance and reduce energy loss. At the same time, in order to achieve mechanical fixation, the substrate material also needs to have a certain strength. For this reason, the substrate usually uses a DBC (Direct Bonding Copper) substrate or an AMB (Active Metal Bonding) substrate.

[0004] The DBC substrate and AMB substrate are mainly composed of a three-layer structure of an upper metal layer, a ceramic layer and a lower metal layer. Among them, the material of the ceramic layer can be selected from Al2O3, AlN, Si3N4, etc. In the conventional heat dissipation model, the chip is soldered on the copper layer on the upper surface of the substrate. The copper layer provides a conductive path for the chip and plays a role in downward heat transfer. The heat transfer path generated by the power module is: chip soldering layer-substrate-board soldering layer-bottom plate-thermal grease-heat sink-external environment, and the heat transfer path is relatively complex. Utility Model Content

[0005] In order to overcome the problems existing in the related art, the utility model provides a packaging substrate, a power module packaging structure and a driving circuit module heat dissipation device. The packaging substrate can achieve heat dissipation of the power module installed thereon based on the Peltier effect, which can improve the heat dissipation efficiency. When applied to power module packaging, it is beneficial to simplify the packaging structure and shorten the chip heat transfer path.

[0006] One of the purposes of the utility model is to provide a packaging substrate:

[0007] comprising an upper ceramic layer, a semiconductor layer and a lower ceramic layer connected in sequence;

[0008] The semiconductor layer is welded to the upper ceramic layer and the lower ceramic layer respectively;

[0009] The semiconductor layer includes a plurality of unit cells, and the unit cells include an N-type semiconductor and a P-type semiconductor;

[0010] The N-type semiconductor and the P-type semiconductor of the unit body are connected in series via the first interconnection metal layer, and the unit bodies are connected via the second interconnection metal layer;

[0011] The first interconnect metal layer and the second interconnect metal layer are disposed on different ceramic layers;

[0012] The top surface of the upper ceramic layer is provided with an interconnection circuit copper layer for connecting the power module, and the interconnection circuit copper layer plays the role of electrical connection and heat conduction.

[0013] When the packaging substrate is used for power module packaging, the power module is welded on the top surface of the upper ceramic layer and connected to the interconnection circuit copper layer. The interconnection circuit copper layer plays the role of electrical connection and heat conduction. By applying voltage to the semiconductor layer, based on the Peltier effect, the end side of the semiconductor layer connected to the upper ceramic layer is used as the cold end to absorb the heat emitted by the power module, and the end side of the semiconductor layer connected to the lower ceramic layer is used as the hot end to release heat. When direct current is passed into the semiconductor layer, energy transfer will occur. The current flows from the N-type semiconductor to the P-type semiconductor. This process will absorb heat. When the current flows from the P-type semiconductor to the N-type semiconductor, this process will release heat. The cold end and the hot end will undergo heat conversion, thereby achieving heat dissipation of the power module.

[0014] In a preferred technical solution of the utility model, the cooling capacity output by the package substrate can be adjusted by changing the power supply or current. For example, the cooling capacity output by the package substrate can be adjusted by adjusting the input power through the regulating circuit, and the regulating circuit can adopt a buck-boost driving circuit.

[0015] In a preferred technical solution of the utility model, the first interconnect metal layer includes a plurality of first conductive parts, the first conductive parts are arranged corresponding to the unit body, and the N-type semiconductor and the P-type semiconductor of the unit body are connected in series through the first conductive parts to form an electric couple.

[0016] In a preferred technical solution of the present invention, the second interconnect metal layer has a positive electrode terminal and a negative electrode terminal.

[0017] In a preferred technical solution of the utility model, each unit body is connected in series in sequence via the second interconnection metal layer;

[0018] Exemplarily, when each unit body is connected in series in sequence via the second interconnect metal layer, the second interconnect metal layer includes a positive terminal, a negative terminal and a plurality of second conductive parts, each unit body is connected in series via the second conductive parts, and the positive terminal and the negative terminal are respectively connected to the first and last unit bodies.

[0019] In a preferred technical solution of the present utility model, the thickness of the packaging substrate is not greater than 2 mm.

[0020] It should be noted that for conventional heat dissipation structures, the thickness of the substrate usually used in the industry is 0.9mm (DBC substrate or AMB substrate), the bottom plate welding layer is 0.3mm, the bottom plate thickness is 3mm, and the thickness of the overall heat dissipation structure is as high as 4.2mm. The use of this packaging substrate to replace the DBC substrate and AMB substrate for packaging the power module can eliminate the bottom plate in the conventional heat dissipation structure, reduce the thickness of the overall heat dissipation structure, and shorten the heat conduction path. At the same time, eliminating the bottom plate in the conventional heat dissipation structure can reduce the production steps of bottom plate welding in the actual production process, which can simplify the production process.

[0021] In a preferred technical solution of the utility model, in order to facilitate heat dissipation, a surface copper layer is arranged on the bottom surface of the lower ceramic layer, a heat sink is arranged on the bottom surface of the lower ceramic layer, and the heat sink is connected to the surface copper layer via a welding layer.

[0022] The second purpose of the utility model is to provide a power module packaging structure:

[0023] It includes a power module and the above-mentioned packaging substrate;

[0024] The power module is welded on the top surface of the upper ceramic layer of the packaging substrate;

[0025] A packaging glue layer is disposed on the top surface of the upper ceramic layer, and the packaging glue layer wraps the power module.

[0026] In a preferred technical solution of the utility model, the power module is connected to the copper layer of the interconnection circuit via bonding wires.

[0027] In a preferred technical solution of the utility model, the power module is connected to the upper ceramic layer by brazing, and the semiconductor layer is connected to the upper ceramic layer and the lower ceramic layer by brazing.

[0028] It should be noted that the packaging substrate is prefabricated and the power module is subsequently installed on the packaging substrate. For this reason, the melting point of the solder between the power module and the upper ceramic layer needs to be lower than the melting point of the solder between the semiconductor layer and the upper ceramic layer and between the semiconductor layer and the lower ceramic layer to ensure that the semiconductor layer will not separate from the upper and lower ceramic layers during the chip welding process.

[0029] In a preferred technical solution of the utility model, the power module is an IGBT module or a MOS module, the encapsulation glue layer is silicone gel, and the bonding wire is a metal wire, preferably an aluminum wire or a copper wire.

[0030] In the power module packaging structure, the packaging substrate is based on the Peltier effect, so that the heat generated by the power module is directly transferred to the cold end, and the heat is dissipated in time through the refrigeration effect of the cold end, thereby achieving the purpose of rapid cooling and heat dissipation of the power module.

[0031] The third purpose of the utility model is to provide a heat dissipation device for a drive circuit module:

[0032] Including controller, packaged chip, heat sink and cooling fan;

[0033] The packaged chip includes the above-mentioned power module packaging structure;

[0034] The heat sink is installed on the bottom surface of the lower ceramic layer, and the heat dissipation fan is located at the bottom end of the heat sink;

[0035] The controller includes a current collector and a power regulator;

[0036] The current collector is connected to the power module to collect the output current of the power module;

[0037] The power regulator is connected to the semiconductor layer to regulate the power of the semiconductor layer.

[0038] The heat transfer path of the power module in the conventional heat dissipation structure is: chip welding layer - substrate - board welding layer - bottom plate - thermal grease - heat sink - external environment. The heat transfer path of the power module in the drive circuit module heat dissipation device is: chip welding layer - packaging substrate - welding layer - heat sink - external environment. Compared with the conventional heat dissipation structure, the heat conduction path of the drive circuit module heat dissipation device is shorter.

[0039] When using:

[0040] The current collector collects the output current of the power module in real time (the larger the output current, the more serious the heating of the power module);

[0041] When the output current of the power module increases, the controller increases the power of the semiconductor layer through the power regulator to enhance the heat transfer effect of the package substrate;

[0042] When the output current of the power module decreases, the controller reduces the power of the semiconductor layer through the power regulator to reduce power consumption while ensuring heat dissipation efficiency.

[0043] In a preferred technical solution of the utility model, the controller includes a protection switch, which is connected to the power module and is used to cut off the output of the power module when the output current of the power module is too large.

[0044] When in use, the current collector collects the output current of the power module in real time, and the protection switch is in the normally closed state. When the output current of the power module exceeds the set threshold, the controller will open the protection switch, disconnect the power module, and stop the large current output to achieve the purpose of protecting the equipment.

[0045] The beneficial effects of the utility model are:

[0046] When the packaging substrate is used for power module packaging, it can achieve heat dissipation of the power module installed thereon based on the Peltier effect, and can improve the heat dissipation efficiency; the power module is welded on the top surface of the upper ceramic layer and connected to the interconnection circuit copper layer, and the interconnection circuit copper layer plays the role of electrical connection and heat conduction. By applying voltage to the semiconductor layer, based on the Peltier effect, the end side of the semiconductor layer connected to the upper ceramic layer is used as the cold end to absorb the heat emitted by the power module, and the end side of the semiconductor layer connected to the lower ceramic layer is used as the hot end to release heat. When direct current is passed into the semiconductor layer, energy transfer will occur, and the current will flow from the N-type semiconductor to the P-type semiconductor. This process will absorb heat. When the current flows from the P-type semiconductor to the N-type semiconductor, this process will release heat, and heat conversion will occur between the cold end and the hot end, thereby achieving heat dissipation of the power module.

[0047] The packaging substrate can replace the DBC substrate and the AMB substrate for packaging the power module, and can eliminate the base plate in the conventional heat dissipation structure, and at the same time, can reduce the thickness of the heat dissipation structure and shorten the heat conduction path. At the same time, eliminating the base plate in the conventional heat dissipation structure can reduce the production steps of base plate welding in the actual production process, and can simplify the production process. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] Figure 1 It is a schematic diagram of the existing packaging structure.

[0049] Figure 2 It is a structural schematic diagram of a packaging substrate.

[0050] Figure 3 It is a schematic diagram of the power module packaging structure.

[0051] Figure 4 It is a heat dissipation device for the drive circuit module;

[0052] Figure 5 It is a heat conduction path diagram of the heat sink of the drive circuit module.

[0053] Reference numerals:

[0054] 100, power module; 101, bonding wire; 102, packaging glue layer; 110, controller; 120, power regulator; 130, protection switch; 140, power supply; 150, current collector; 200, chip welding layer; 300, substrate; 310, upper metal layer; 320 ceramic layer; 330, lower metal layer; 400, board welding layer; 500, bottom plate; 600, thermal grease; 700, heat sink; 701, welding layer of heat sink; 800, packaging substrate; 801, interconnection circuit copper layer; 802, upper ceramic layer; 803, semiconductor layer; 804, lower ceramic layer; 805, surface copper layer; 806, first interconnection metal layer; 807, N-type semiconductor; 808, P-type semiconductor; 809, second interconnection metal layer; 900, cooling fan. DETAILED DESCRIPTION

[0055] The preferred embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although the preferred embodiments of the present invention are shown in the accompanying drawings, it should be understood that the present invention can be implemented in various forms and should not be limited by the embodiments described herein. On the contrary, these embodiments are provided to make the present invention more thorough and complete, and to fully convey the scope of the present invention to those skilled in the art.

[0056] The typical packaging structure of the drive circuit module is as follows: Figure 1 As shown, the power module 100 is welded on the substrate 300, the substrate 300 is welded on the bottom plate 500, and the bottom plate 500 is connected to the heat sink 700 through a layer of thermal grease 600. The heat generated by the power module 100 chip is mainly transferred through the substrate 300 and the heat sink 700. For this reason, the material used for the substrate 300 needs to have excellent thermal conductivity and resistance to thermal shock, and at the same time, the dielectric constant should be low to avoid stray inductance and reduce energy loss. At the same time, in order to achieve mechanical fixation, the substrate 300 material also needs to have a certain strength. For this reason, the substrate 300 usually adopts a DBC (Direct Bonding Copper, direct copper clad ceramic) substrate 300 or an AMB (Active Metal Bonding, active metal brazing ceramic) substrate 300.

[0057] The DBC substrate 300 and the AMB substrate 300 are mainly composed of a three-layer structure of an upper metal layer 310, a ceramic layer 320 and a lower metal layer 330. Among them, the material of the ceramic layer can be selected from Al2O3, AlN, Si3N4, etc. In the conventional heat dissipation model, the chip is soldered to the copper layer on the upper surface of the substrate 300. The copper layer provides a conductive path for the chip and plays a role in downward heat transfer. The heat transfer path generated by the power module 100 is: chip soldering layer 200-substrate 300-board soldering layer 400-bottom plate 500-thermal grease 600-heat sink 700-external environment, and the heat transfer path is relatively complex.

[0058] Example 1

[0059] In view of the above problems, Embodiment 1 provides a packaging substrate 800, which can achieve heat dissipation of the power module 100 mounted thereon based on the Peltier effect, thereby improving the heat dissipation efficiency. When applied to the packaging of the power module 100, it is beneficial to simplify the packaging structure and shorten the chip heat transfer path.

[0060] like Figure 1-3 As shown, a packaging substrate 800:

[0061] It includes an upper ceramic layer 802, a semiconductor layer 803 and a lower ceramic layer 804 connected in sequence, and the semiconductor layer 803 is welded to the upper ceramic layer 802 and the lower ceramic layer 804 respectively;

[0062] The semiconductor layer 803 includes a plurality of unit cells, each of which includes an N-type semiconductor 807 and a P-type semiconductor 808;

[0063] The N-type semiconductor 807 and the P-type semiconductor 808 of the unit body are connected in series via the first interconnection metal layer 806, and each unit body is connected via the second interconnection metal layer 809;

[0064] The first interconnect metal layer 806 and the second interconnect metal layer 809 are disposed on different ceramic layers;

[0065] The top surface of the upper ceramic layer 802 is provided with an interconnection circuit copper layer 801 for connecting the power module 100 , and the interconnection circuit copper layer 801 plays the role of electrical connection and heat conduction.

[0066] In this embodiment, the thickness of the packaging substrate 800 is no more than 2 mm.

[0067] It should be noted that for conventional heat dissipation structures, the thickness of the substrate 300 used in the industry is usually 0.9 mm (DBC substrate 300 or AMB substrate 300), the welding layer 400 of the bottom plate 500 is 0.3 mm, the thickness of the bottom plate 500 is 3 mm, and the thickness of the overall heat dissipation structure is as high as 4.2 mm. However, by using the present packaging substrate 800 to replace the DBC substrate 300 and the AMB substrate 300 for packaging the power module 100, the bottom plate 500 in the conventional heat dissipation structure can be eliminated, which can reduce the thickness of the overall heat dissipation structure and shorten the heat conduction path.

[0068] In this embodiment, in order to facilitate heat dissipation, a surface copper layer 805 is provided on the bottom surface of the lower ceramic layer 804 , and a heat sink 700 is provided on the bottom surface of the lower ceramic layer 804 . The heat sink 700 is connected to the surface copper layer 805 via a welding layer 701 .

[0069] When the packaging substrate 800 is used for packaging the power module 100, the heat dissipation of the power module 100 installed on the packaging substrate 800 can be achieved based on the Peltier effect, which can improve the heat dissipation efficiency; the power module 100 is welded on the top surface of the upper ceramic layer 802 and connected to the interconnection circuit copper layer 801, and the interconnection circuit copper layer 801 plays the role of electrical connection and heat conduction. By applying voltage to the semiconductor layer 803, based on the Peltier effect, the end side of the semiconductor layer 803 connected to the upper ceramic layer 802 is used as a cold end to absorb the heat dissipated by the power module 100, and the end side of the semiconductor layer 803 connected to the lower ceramic layer 804 is used as a hot end to release heat. When direct current is passed into the semiconductor layer 803, energy transfer will occur, and the current will flow from the N-type semiconductor 807 to the P-type semiconductor 808. This process will absorb heat. When the current flows from the P-type semiconductor 808 to the N-type semiconductor 807, this process will release heat, and heat conversion will occur between the cold end and the hot end, thereby achieving heat dissipation of the power module 100.

[0070] The packaging substrate 800 can replace the DBC substrate 300 and the AMB substrate 300 for packaging the power module 100, and can eliminate the base plate 500 in the conventional heat dissipation structure, thereby reducing the thickness of the heat dissipation structure and shortening the heat conduction path. At the same time, eliminating the base plate 500 in the conventional heat dissipation structure can reduce the production steps of welding the base plate 500 in the actual production process, thereby simplifying the production process.

[0071] In practical applications, the cooling capacity output by the package substrate 800 can be adjusted by changing the power supply 140 or the current. For example, the cooling capacity output by the package substrate 800 can be adjusted by adjusting the input power through the adjustment circuit, and the adjustment circuit can adopt a buck-boost drive circuit.

[0072] Example 2

[0073] Embodiment 2 Based on the above embodiment, the electrical connection relationship of each unit body in the packaging substrate 800 is further designed.

[0074] like Figure 1-3 As shown, a packaging substrate 800:

[0075] It includes an upper ceramic layer 802, a semiconductor layer 803 and a lower ceramic layer 804 which are connected in sequence, and the semiconductor layer 803 is welded to the upper ceramic layer 802 and the lower ceramic layer 804 respectively;

[0076] The semiconductor layer 803 includes a plurality of unit cells, each of which includes an N-type semiconductor 807 and a P-type semiconductor 808;

[0077] The N-type semiconductor 807 and the P-type semiconductor 808 of the unit body are connected in series via the first interconnection metal layer 806, and each unit body is connected via the second interconnection metal layer 809;

[0078] The first interconnect metal layer 806 and the second interconnect metal layer 809 are disposed on different ceramic layers;

[0079] The top surface of the upper ceramic layer 802 is provided with an interconnection circuit copper layer 801 for connecting the power module 100, and the interconnection circuit copper layer 801 plays the role of electrical connection and heat conduction;

[0080] The first interconnect metal layer 806 includes a plurality of first conductive parts, which are arranged corresponding to the unit body, and the N-type semiconductor 807 and the P-type semiconductor 808 of the unit body are connected in series through the first conductive parts to form an electric couple;

[0081] The second interconnect metal layer 809 has a positive electrode terminal and a negative electrode terminal;

[0082] Each unit cell is connected in series in sequence via the second interconnect metal layer 809 .

[0083] Exemplarily, when each unit body is connected in series in sequence via the second interconnect metal layer 809, the second interconnect metal layer 809 includes a positive terminal, a negative terminal and a plurality of second conductive parts, each unit body is connected in series via the second conductive parts, and the positive terminal and the negative terminal are respectively connected to the first and last unit bodies.

[0084] When in use, the positive terminal and the negative terminal are connected to a driving power source 140, and the cooling capacity output by the packaging substrate 800 is adjusted by changing the voltage or current.

[0085] When in use, the power module 100 is welded on the top surface of the upper ceramic layer 802 and connected to the interconnection circuit copper layer 801. The interconnection circuit copper layer 801 plays the role of electrical connection and heat conduction. After the power supply 140 is turned on, the semiconductor layer 803 is energized. Based on the Peltier effect, the end side of the semiconductor layer 803 connected to the upper ceramic layer 802 is used as a cold end to absorb the heat dissipated by the power module 100, and the end side of the semiconductor layer 803 connected to the lower ceramic layer 804 is used as a hot end to release heat. The units of the semiconductor layer 803 are connected in series in sequence through the second interconnection metal layer 809. After direct current is passed into the semiconductor layer 803, energy transfer will occur. The current flows from the N-type semiconductor 807 to the P-type semiconductor 808. This process will absorb heat. When the current flows from the P-type semiconductor 808 to the N-type semiconductor 807, this process will release heat. Heat conversion occurs between the cold end and the hot end, thereby achieving heat dissipation of the power module 100.

[0086] Example 3

[0087] Embodiment 3 Based on the above embodiments, a structure for packaging a power module 100 using the packaging substrate 800 in the above embodiments is provided, so as to reduce the thickness of the heat dissipation structure, shorten the heat conduction path, and improve the heat dissipation efficiency.

[0088] like Figure 1-3 As shown, a power module 100 packaging structure is provided:

[0089] It includes a power module 100 and a packaging substrate 800;

[0090] The package substrate 800 includes an upper ceramic layer 802, a semiconductor layer 803 and a lower ceramic layer 804 connected in sequence, and the semiconductor layer 803 is welded to the upper ceramic layer 802 and the lower ceramic layer 804 respectively;

[0091] The semiconductor layer 803 includes a plurality of unit cells, each of which includes an N-type semiconductor 807 and a P-type semiconductor 808;

[0092] The N-type semiconductor 807 and the P-type semiconductor 808 of the unit body are connected in series via the first interconnection metal layer 806, and each unit body is connected via the second interconnection metal layer 809;

[0093] The first interconnect metal layer 806 and the second interconnect metal layer 809 are disposed on different ceramic layers;

[0094] The top surface of the upper ceramic layer 802 is provided with an interconnection circuit copper layer 801 for connecting the power module 100, and the interconnection circuit copper layer 801 plays the role of electrical connection and heat conduction;

[0095] The first interconnect metal layer 806 includes a plurality of first conductive parts, which are arranged corresponding to the unit body, and the N-type semiconductor 807 and the P-type semiconductor 808 of the unit body are connected in series through the first conductive parts to form an electric couple;

[0096] The second interconnect metal layer 809 has a positive electrode terminal and a negative electrode terminal;

[0097] Each unit cell is connected in series in sequence via the second interconnect metal layer 809;

[0098] The power module 100 is welded on the top surface of the upper ceramic layer 802 of the package substrate 800;

[0099] The top surface of the upper ceramic layer 802 is provided with a packaging glue layer 102 , and the packaging glue layer 102 wraps the power module 100;

[0100] A surface copper layer 805 is disposed on the bottom surface of the lower ceramic layer 804 . A heat sink 700 is disposed on the bottom surface of the lower ceramic layer 804 . The heat sink 700 is connected to the surface copper layer 805 via a welding layer 701 .

[0101] In this embodiment, the power module 100 is connected to the upper ceramic layer 802 by brazing, and the semiconductor layer 803 is connected to the upper ceramic layer 802 and the lower ceramic layer 804 by brazing.

[0102] It should be noted that the packaging substrate 800 is prefabricated and the power module 100 is subsequently installed on the packaging substrate 800. For this reason, the melting point of the solder between the power module 100 and the upper ceramic layer 802 needs to be lower than the melting point of the solder between the semiconductor layer 803 and the upper ceramic layer 802 and between the semiconductor layer 803 and the lower ceramic layer 804, to ensure that the semiconductor layer 803 will not separate from the upper and lower ceramic layers 804 during the chip welding process.

[0103] In this embodiment, the power module 100 is connected to the interconnection circuit copper layer 801 via bonding wires 101. In practical applications, the bonding wires 101 are metal wires, preferably aluminum wires or copper wires.

[0104] In this embodiment, the power module 100 is an IGBT module or a MOS module, and the packaging glue layer 102 is silicone gel.

[0105] In the packaging structure of the power module 100, the packaging substrate 800 is based on the Peltier effect, so that the heat generated by the power module 100 is directly transferred to the cold end, and the heat is dissipated in time through the cooling effect of the cold end, thereby achieving the purpose of rapid cooling and heat dissipation of the power module 100.

[0106] Specifically, the packaging substrate 800 can achieve heat dissipation of the power module 100 installed thereon based on the Peltier effect, and can improve the heat dissipation efficiency. By applying voltage to the semiconductor layer 803, based on the Peltier effect, the end side of the semiconductor layer 803 connected to the upper ceramic layer 802 is used as a cold end to absorb the heat dissipated by the power module 100, and the end side of the semiconductor layer 803 connected to the lower ceramic layer 804 is used as a hot end to release heat. The units of the semiconductor layer 803 are connected in series in sequence through the second interconnected metal layer 809. When direct current is passed into the semiconductor layer 803, energy transfer will occur. The current flows from the N-type semiconductor 807 to the P-type semiconductor 808. This process will absorb heat. When the current flows from the P-type semiconductor 808 to the N-type semiconductor 807, this process will release heat. Heat conversion occurs between the cold end and the hot end, thereby achieving heat dissipation of the power module 100.

[0107] The heat transfer path of the power module 100 in the conventional heat dissipation structure is:

[0108] Chip welding layer 200—substrate 300—board welding layer 400—bottom plate 500—thermal grease 600—heat sink 700—external environment.

[0109] The heat transfer path generated by the power module 100 in the power module 100 packaging structure is:

[0110] Chip welding layer 200—package substrate 800—welding layer 701—heat sink 700—external environment.

[0111] For conventional heat dissipation structures, the thickness of the substrate 300 usually used in the industry is 0.9 mm (DBC substrate 300 or AMB substrate 300), the welding layer 400 of the bottom plate 500 is 0.3 mm, the thickness of the bottom plate 500 is 3 mm, and the thickness of the overall heat dissipation structure is as high as 4.2 mm. However, the present packaging substrate 800 is used to replace the DBC substrate 300 and the AMB substrate 300 for packaging the power module 100. The thickness of the packaging substrate 800 is not more than 2 mm, and the bottom plate 500 in the conventional heat dissipation structure can be eliminated, simplifying the packaging structure, reducing the thickness of the overall heat dissipation structure, and shortening the heat conduction path. At the same time, eliminating the bottom plate 500 in the conventional heat dissipation structure can reduce the production steps of the bottom plate 500 welding in the actual production process, simplifying the production process, and reducing production costs.

[0112] Example 4

[0113] Embodiment 4 Based on the above embodiment, a heat dissipation device for a driving circuit module using the packaging substrate 800 in the above embodiment is provided.

[0114] like Figure 2-5 As shown, a heat dissipation device for a drive circuit module:

[0115] It includes a controller 110, a packaged chip, a heat sink 700 and a heat dissipation fan 900;

[0116] The packaged chip includes a power module 100 and a package substrate 800;

[0117] The package substrate 800 includes an upper ceramic layer 802, a semiconductor layer 803 and a lower ceramic layer 804 connected in sequence, and the semiconductor layer 803 is welded to the upper ceramic layer 802 and the lower ceramic layer 804 respectively;

[0118] The semiconductor layer 803 includes a plurality of unit cells, each of which includes an N-type semiconductor 807 and a P-type semiconductor 808;

[0119] The N-type semiconductor 807 and the P-type semiconductor 808 of the unit body are connected in series via the first interconnection metal layer 806, and each unit body is connected via the second interconnection metal layer 809;

[0120] The first interconnect metal layer 806 and the second interconnect metal layer 809 are disposed on different ceramic layers;

[0121] The top surface of the upper ceramic layer 802 is provided with an interconnection circuit copper layer 801 for connecting the power module 100, and the interconnection circuit copper layer 801 plays the role of electrical connection and heat conduction;

[0122] The first interconnect metal layer 806 includes a plurality of first conductive parts, which are arranged corresponding to the unit body, and the N-type semiconductor 807 and the P-type semiconductor 808 of the unit body are connected in series through the first conductive parts to form an electric couple;

[0123] The second interconnect metal layer 809 has a positive electrode terminal and a negative electrode terminal;

[0124] Each unit cell is connected in series in sequence via the second interconnect metal layer 809;

[0125] The power module 100 is welded on the top surface of the upper ceramic layer 802 of the package substrate 800;

[0126] The top surface of the upper ceramic layer 802 is provided with a packaging glue layer 102;

[0127] The packaging glue layer 102 wraps the power module 100;

[0128] The heat sink 700 is installed on the bottom surface of the lower ceramic layer 804, and the heat dissipation fan 900 is located at the bottom end of the heat sink 700;

[0129] The controller 110 includes a current collector 150 and a power regulator 120;

[0130] The current collector 150 is connected to the power module 100 to collect the output current of the power module 100;

[0131] The power regulator 120 is connected to the semiconductor layer 803 to regulate the power of the semiconductor layer 803 .

[0132] When using:

[0133] The current collector 150 collects the output current of the power module 100 in real time (the larger the output current, the more serious the heating of the power module 100);

[0134] When the output current of the power module 100 increases, the controller 110 increases the power of the semiconductor layer 803 through the power regulator 120 to enhance the heat transfer effect of the package substrate 800;

[0135] When the output current of the power module 100 decreases, the controller 110 reduces the power of the semiconductor layer 803 through the power regulator 120 to reduce power consumption while ensuring heat dissipation efficiency.

[0136] In practical applications, the power regulator 120 adjusts the cooling capacity output by the package substrate 800 by changing the voltage or current. Exemplarily, the power regulator 120 includes a buck-boost driving circuit.

[0137] In this embodiment, the controller 110 includes a protection switch 130 , which is connected to the power module 100 and is used to cut off the output of the power module 100 when the output current of the power module 100 is too large.

[0138] When in use, the current collector 150 collects the output current of the power module 100 in real time, and the protection switch 130 is in a normally closed state. When the output current of the power module 100 exceeds the set threshold, the controller 110 will open the protection switch 130, disconnect the power module 100, and stop the output of large current to achieve the purpose of protecting the equipment.

[0139] Unless otherwise specifically stated, the relative arrangement, numerical expressions and numerical values ​​of the parts and steps set forth in these embodiments do not limit the scope of the application. In all examples shown and discussed here, any specific value should be interpreted as being merely exemplary, rather than as a restriction. Therefore, other examples of exemplary embodiments can have different values. It should be noted that similar reference numerals and letters represent similar items in the following drawings, and therefore, once a certain item is defined in an accompanying drawing, it does not need to be further discussed in the subsequent accompanying drawings.

[0140] In the description of the present application, it should be understood that the directions or positional relationships indicated by directional words such as "front, back, up, down, left, right", "lateral, vertical, perpendicular, horizontal" and "top, bottom" are usually based on the directions or positional relationships shown in the drawings, and are only for the convenience of describing the present application and simplifying the description. Unless otherwise specified, these directional words do not indicate or imply that the device or element referred to must have a specific direction or be constructed and operated in a specific direction, and therefore cannot be understood as limiting the scope of protection of the present application; the directional words "inside and outside" refer to the inside and outside relative to the contours of each component itself.

[0141] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used here to describe the spatial positional relationship between a device or feature and other devices or features as shown in the figure. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figure. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" can include both "above" and "below". The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used here are interpreted accordingly.

[0142] In addition, it should be noted that the use of terms such as "first" and "second" to limit components is only for the convenience of distinguishing the corresponding components. Unless otherwise stated, the above terms have no special meaning and therefore cannot be understood as limiting the scope of protection of this application.

[0143] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A packaging substrate, characterized in that: comprising an upper ceramic layer, a semiconductor layer and a lower ceramic layer connected in sequence; The semiconductor layer includes a plurality of unit cells, and the unit cells include an N-type semiconductor and a P-type semiconductor; The N-type semiconductor and the P-type semiconductor of the unit body are connected in series via the first interconnection metal layer, and the unit bodies are connected via the second interconnection metal layer; The first interconnect metal layer and the second interconnect metal layer are disposed on different ceramic layers; The top surface of the upper ceramic layer is provided with an interconnection circuit copper layer for connecting the power module.

2. The packaging substrate according to claim 1, characterized in that: The first interconnect metal layer includes a plurality of first conductive parts, the first conductive parts are arranged corresponding to the unit body, and the N-type semiconductor and the P-type semiconductor of the unit body are connected in series through the first conductive parts to form an electric couple.

3. The packaging substrate according to claim 2, characterized in that: The unit cells are connected in series in sequence via the second interconnect metal layer.

4. The packaging substrate according to claim 1, wherein: The bottom surface of the lower ceramic layer is provided with a surface copper layer.

5. The packaging substrate according to claim 4, characterized in that: The thickness of the packaging substrate is not greater than 2 mm.

6. A power module packaging structure, characterized in that: Comprising a power module and a packaging substrate according to any one of claims 1 to 5; The power module is welded on the top surface of the upper ceramic layer of the packaging substrate; A packaging glue layer is disposed on the top surface of the upper ceramic layer, and the packaging glue layer wraps the power module.

7. The power module packaging structure according to claim 6, characterized in that: The power modules are connected to the copper layer of the interconnection circuit via bonding wires.

8. The power module packaging structure according to claim 7, characterized in that: The power module is an IGBT module or a MOS module.

9. A heat dissipation device for a driving circuit module, characterized in that: Including controller, packaged chip, heat sink and cooling fan; The packaged chip comprises the power module packaging structure according to any one of claims 6 to 8; The heat sink is installed on the bottom surface of the lower ceramic layer, and the heat dissipation fan is located at the bottom end of the heat sink; The controller includes a current collector and a power regulator; The current collector is connected to the power module to collect the output current of the power module; The power regulator is connected to the semiconductor layer to regulate the power of the semiconductor layer.

10. The heat dissipation device for a driving circuit module according to claim 9, characterized in that: The controller comprises a protection switch, which is connected to the power module and is used to cut off the output of the power module when the output current of the power module is too large.

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