Crude gallium purification device based on longitudinal temperature gradient field

Abstract

The utility model discloses a crude gallium purification device based on a longitudinal temperature gradient field, comprising a temperature control box which is arranged to be a rectangular box body structure, is arranged to be an upper opening structure, and is crystallization purification temperature control adjusting equipment for crude gallium purification; the dispersion cylinder is arranged above the opening of the temperature control box, and the dispersion cylinder is gallium refining process equipment; and liquid discharging pipes are arranged on one side of the temperature control box at equal intervals. According to the crude gallium purification device based on the longitudinal temperature gradient field, a temperature control box and a dispersion barrel form corresponding equipment, symmetrical dispersion equipment is arranged in the dispersion barrel, so that crude gallium injected into the dispersion barrel by an injection box is easily transferred into the temperature control box, and the position distance between the temperature control box and the dispersion barrel is adjusted through pushing of a sliding rail frame; and a high-temperature tank arranged in the temperature control box is matched with a heating plate, so that coarse gallium with crystal blocks flows out of the dispersion barrel and is easily further heated to form liquid, and purification treatment on the gallium is facilitated.

Description

Technical Field

[0001] The utility model relates to the technical field of crude gallium purification, in particular to a crude gallium purification device based on a longitudinal temperature gradient field. Background Art

[0002] Gallium is an important rare metal with important applications in many emerging high-tech fields. Gallium has a low abundance in the earth's crust and is usually associated with metals such as aluminum and zinc. It is mainly recovered as a by-product of the smelting process. Gallium in ores or secondary resources is often first leached with acid or alkali, and then ion exchange, graded precipitation, and solvent extraction are used to enrich the gallium in the leachate, and finally 99.99% crude gallium is prepared by electrolysis.

[0003] The high-purification preparation of gallium usually uses industrially produced crude gallium as raw material to purify gallium, wherein the purification is achieved by coordinating operations with different melting points of metals and crystallization methods. In the existing crystallization purification operation, a single cylindrical structure is used to directly perform the purification operation along with a temperature regulating device. Since the crude gallium needs to be heated up and then cooled down, the temperature regulating structure of a single device has a long heat dissipation and waiting time for temperature changes, and solutions of different concentrations of auxiliary crystallization treatment have an impact on the crystallization of gallium, affecting the crystallization effect. Utility Model Content

[0004] The purpose of the utility model is to provide a crude gallium purification device based on a longitudinal temperature gradient field, so as to solve the problem proposed in the above background technology that the existing crystallization purification operation is directly carried out through a single cylindrical structure with a temperature regulating device. Since the crude gallium needs to be heated up and then cooled down, the temperature regulating structure of the single device has a long heat dissipation and waiting time for temperature changes, and solutions of different concentrations of auxiliary crystallization treatment have an impact on the crystallization of gallium, thereby affecting the crystallization effect.

[0005] To achieve the above-mentioned purpose, the utility model provides the following technical solutions: a crude gallium purification device based on a longitudinal temperature gradient field, comprising a temperature control box, which is arranged as a rectangular box structure, and the temperature control box is arranged as an upper opening structure, and the temperature control box is a crystallization purification temperature control and regulating device for crude gallium purification;

[0006] A dispersion cylinder is arranged above the opening of the temperature control box, and the dispersion cylinder is a process equipment for gallium refining;

[0007] A liquid discharge pipe is equidistantly arranged on one side of the temperature control box, and a liquid inlet pipe is equidistantly arranged on the other side of the temperature control box, and the liquid discharge pipe and the liquid inlet pipe are symmetrically arranged with an upper and lower offset.

[0008] The temperature gradient field component provides a processing environment with different temperature zones for gallium purification and assists gallium crystallization;

[0009] A slide rail frame, both sides of which are located on the upper end surface of the opening of the temperature control box and slide, the slide rail frame is composed of a U-shaped frame body and a ring structure, and the bottom end of the dispersion cylinder is penetrated inside the slide rail frame, and the bottom end of the dispersion cylinder is set as a conical structure, a limit frame is set on one side of the upper end of the dispersion cylinder, and the inside of the limit frame is penetrated by one end of the injection box.

[0010] By adopting the above technical solution, the temperature gradient field in the device provides assistance for gallium purification according to solutions of different concentrations or acidities.

[0011] Preferably, slide rails sliding with the slide rail frame are arranged on both sides of the upper end of the opening of the temperature control box, and the interior of the temperature control box is arranged as a stepped structure, and the lowest end of the stepped structure of the temperature control box is flush with the bottom end of the drainage pipe.

[0012] By adopting the above technical solution, the stepped structure inside the temperature control box facilitates the temperature regulation and provides assistance for gallium crystallization.

[0013] Preferably, the temperature gradient field component comprises:

[0014] A high temperature tank, which is arranged at the highest step position of the stepped structure of the temperature control box;

[0015] A baffle plate 1 is arranged on the stepped structure surface of the temperature control box, and the baffle plate 1 is installed on one side of the high temperature tank;

[0016] A buffer tank, which is arranged at a step position lower than the high-temperature tank in the stepped structure of the temperature control box, and the buffer tank and the high-temperature tank are arranged in a stepped shape;

[0017] A second baffle plate is arranged on the stepped structure surface of the temperature control box, and the second baffle plate is installed on one side of the buffer tank;

[0018] The temperature transfer plate is arranged at the corner of the stepped structure of the temperature control box, and the temperature transfer plate is arranged on the second surface of the baffle plate on one side of the buffer tank.

[0019] By adopting the above technical solution, the temperature gradient field component provides a corresponding temperature crystallization environment for different solution concentrations or acidities.

[0020] Preferably, a heating plate is provided at the bottom end of the high-temperature tank inside the temperature control box, and the heating surface of the heating plate is arranged toward the high-temperature tank.

[0021] By adopting the above technical solution, the heating plate located at the bottom of the high-temperature tank provides auxiliary heating for the interior of the device.

[0022] Preferably, inclined flow holes are equidistantly arranged inside the baffle plate 1, and the flow holes inside the baffle plate 1 connect the high-temperature tank and the buffer tank, and the flow holes are equidistantly arranged inside the buffer tank.

[0023] By adopting the above technical solution, the through-holes are used to assist the flow of the solution to the inside by controlling the temperature.

[0024] Preferably, the bottom end of the buffer tank is located inside the temperature control box and is provided with an exchange plate, and a pipe of the exchange plate passes through the side wall of the temperature control box.

[0025] By adopting the above technical solution, a buffer position is provided for the temperature change position of the temperature gradient field inside the temperature control box through the buffer groove.

[0026] Preferably, the temperature transfer plate is arranged in a stepped shape and is sealed and installed at two positions of the baffle plate that fits the stepped structure surface of the temperature control box, and the temperature transfer plate is installed at the cooling end of the semiconductor refrigeration plate, and the semiconductor refrigeration plate is located inside the bottom end of the temperature control box.

[0027] The above technical solution is adopted to provide assistance for the low-temperature environment in the temperature gradient field, which is convenient for gallium crystallization output.

[0028] Compared with the prior art, the utility model has the following beneficial effects: the crude gallium purification device based on the longitudinal temperature gradient field:

[0029] 1. When in use, the temperature control box and the dispersion cylinder constitute corresponding equipment, and a symmetrical dispersion device is arranged inside the dispersion cylinder, so that the crude gallium injected into the dispersion cylinder by the injection box can be easily transferred to the inside of the temperature control box. The position distance between the temperature control box and the dispersion cylinder is adjusted by pushing the slide rail frame. The high-temperature tank and the heating plate arranged inside the temperature control box cooperate to make it easy for the crude gallium with crystal blocks flowing out of the dispersion cylinder to further heat up to form liquid, which is convenient for the purification of gallium;

[0030] 2. The stepped structure inside the temperature control box cooperates with the heating plate, the exchange plate and the semiconductor refrigeration plate to purify the gallium crystals of the crude gallium solution. The baffle plate arranged on one side of the high-temperature tank is convenient for slowing down the flow of the temperature gradient field of the crude gallium solution in the temperature control box. As the temperature of the temperature gradient field decreases, the crude gallium purification operation is facilitated. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 This is a schematic diagram of the overall external three-dimensional structure of the utility model;

[0032] Figure 2 This is a schematic diagram of the internal three-dimensional structure of the temperature control box of the utility model from top view;

[0033] Figure 3 This is a schematic diagram of the three-dimensional structure of the installation of the slide rail frame and the dispersion cylinder of the utility model;

[0034] Figure 4 This is a schematic diagram of the overall internal side section stereoscopic structure of the utility model;

[0035] Figure 5This is a schematic diagram of the overall internal three-dimensional structure of the utility model;

[0036] Figure 6 For this utility model Figure 5 Enlarged structural diagram at A in the middle.

[0037] In the figure: 1. temperature control box; 2. drain pipe; 3. liquid inlet pipe; 4. heating plate; 5. high temperature tank; 6. baffle plate 1; 7. flow hole; 8. buffer tank; 9. exchange plate; 10. baffle plate 2; 11. temperature transfer plate; 12. semiconductor refrigeration plate; 13. slide rail frame; 14. dispersion cylinder; 15. injection box; 16. limit frame. DETAILED DESCRIPTION

[0038] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0039] See also Figure 1-6 The utility model provides a technical solution: a crude gallium purification device based on a longitudinal temperature gradient field, comprising a temperature control box 1, a liquid discharge pipe 2, a liquid inlet pipe 3, a heating plate 4, a high-temperature tank 5, a baffle plate 1 6, a flow hole 7, a buffer tank 8, an exchange plate 9, a baffle plate 2 10, a temperature transfer plate 11, a semiconductor refrigeration sheet 12, a slide rail frame 13, a dispersion cylinder 14, an injection box 15 and a limit frame 16;

[0040] Among them, the temperature control box 1 is set as a rectangular box structure, and the temperature control box 1 is set as an upper opening structure, and the temperature control box 1 is a crystallization purification temperature control and adjustment equipment for crude gallium purification;

[0041] A dispersion cylinder 14 is disposed above the opening of the temperature control box 1 and is a process equipment for gallium refining;

[0042] A liquid discharge pipe 2 is equidistantly arranged on one side of the temperature control box 1, and a liquid inlet pipe 3 is equidistantly arranged on the other side of the temperature control box 1, and the liquid discharge pipe 2 and the liquid inlet pipe 3 are symmetrically arranged with vertical displacement, and a temperature gradient field component is longitudinally arranged inside the temperature control box 1 to provide a processing environment in different temperature zones for gallium purification and to assist gallium crystallization, and slide rails sliding with the slide rail frame 13 are arranged on both sides of the upper end of the opening of the temperature control box 1, and the interior of the temperature control box 1 is arranged in a stepped structure, and the lowest end of the stepped structure of the temperature control box 1 is flush with the bottom end of the liquid discharge pipe 2;

[0043] The slide rail frame 13 has two sides located on the upper end surface of the opening of the temperature control box 1 for sliding. The slide rail frame 13 is composed of a U-shaped frame body and a ring structure. The bottom end of the dispersion tube 14 penetrates the interior of the slide rail frame 13, and the bottom end of the dispersion tube 14 is set as a conical structure. A limit frame 16 is set on one side of the upper end of the dispersion tube 14, and one end of the injection box 15 penetrates the interior of the limit frame 16;

[0044] In conjunction with the accompanying drawings Figure 1-6 As shown, when in use, the slide rail frame 13 is set in the upper slide rail of the temperature control box 1, as shown in FIG. Figure 1 and Figure 4-5 As shown, the dispersion cylinder 14 is installed in the annular structure of the slide rail frame 13, and the U-shaped structure of the slide rail frame 13 is convenient for sliding connection with the temperature control box 1, as shown in FIG. Figure 1 As shown, the slide rail frame 13 is located in the temperature control box 1 and slides to adjust the gallium crystal position. Figure 1 and Figure 3 As shown, the bottom end of the conical structure of the dispersion cylinder 14 is equipped with a valve structure as needed, a corresponding dispersion filter or a platform structure is arranged inside the dispersion cylinder 14, and a limit frame 16 installed on one side of the dispersion cylinder 14 is provided to assist the installation of the injection box 15, wherein the injection box 15 is used to turn the flow of the crude gallium solution into the dispersion cylinder 14, and the temperature gradient field component located in the temperature control box 1 cooperates with the stepped structure to form a longitudinal temperature gradient field, as shown in FIG. Figure 1 As shown, the drain pipe 2 and the inlet pipe 3 are located on both sides of the temperature control box 1, as shown in FIG. Figure 1 and 4 -5, the outside of the liquid discharge pipe 2 and the liquid inlet pipe 3 are connected with the corresponding valves and pipelines as needed to facilitate the flow of liquid and the active use of the device.

[0045] The temperature gradient field component includes:

[0046] The high temperature tank 5 is arranged at the highest step position of the stepped structure of the temperature control box 1. The bottom of the high temperature tank 5 is located inside the temperature control box 1 and a heating plate 4 is arranged, and the heating surface of the heating plate 4 is arranged toward the high temperature tank 5.

[0047] The baffle plate 1 6 is arranged on the stepped structure surface of the temperature control box 1, and the baffle plate 1 6 is installed on one side of the high-temperature tank 5. The baffle plate 1 6 has inclined flow holes 7 arranged equidistantly inside, and the flow holes 7 inside the baffle plate 1 6 connect the high-temperature tank 5 with the buffer tank 8, and the flow holes 7 are arranged equidistantly inside the buffer tank 8;

[0048] The buffer tank 8 is arranged at a step position lower than the high temperature tank 5 in the stepped structure of the temperature control box 1, and the buffer tank 8 and the high temperature tank 5 are arranged in a stepped manner. The bottom end of the buffer tank 8 is located inside the temperature control box 1 and an exchange plate 9 is arranged, and the pipe of the exchange plate 9 passes through the side wall of the temperature control box 1;

[0049] The second baffle plate 10 is arranged on the stepped structure surface of the temperature control box 1, and the second baffle plate 10 is installed on one side of the buffer tank 8;

[0050] The heat transfer plate 11 is arranged at the corner of the stepped structure of the temperature control box 1, and the heat transfer plate 11 is arranged on the surface of the baffle plate 10 on one side of the buffer tank 8, the heat transfer plate 11 is arranged in a stepped shape and is sealed and installed at the position of the baffle plate 10 on the stepped structure surface of the temperature control box 1, and the heat transfer plate 11 is installed at the cooling end of the semiconductor refrigeration sheet 12, and the semiconductor refrigeration sheet 12 is arranged inside the bottom end of the temperature control box 1;

[0051] In conjunction with the accompanying drawings Figure 1-6 As shown, the stepped structure inside the temperature control box 1, the high temperature tank 5 of the stepped structure of the temperature control box 1, as shown Figure 4-5 As shown, the high-temperature tank 5 further melts the crude gallium liquid with particles discharged from the dispersion cylinder 14 through the heating plate 4 arranged at the bottom thereof with the internal heating wire driven by electricity, so as to facilitate the purification of gallium. As the crude gallium solution is fully melted, it passes through the flow hole 7 arranged inside the baffle plate 1 6 located on one side of the high-temperature tank 5, and flows to the buffer tank 8. The heat is dispersed through the exchange plate 9 arranged at the bottom of the buffer tank 8 through the built-in pipeline. The baffle plate 2 10 located on one side of the buffer tank 8 facilitates the further flow of the crude gallium solution through the built-in flow hole 7. The temperature transfer plate 11 arranged on one side of the baffle plate 2 10, as shown in FIG. Figure 4-5 As shown, a heat transfer plate 11 is installed in cooperation with a semiconductor refrigeration sheet 12, wherein a space is left inside the temperature control box 1 where the semiconductor refrigeration sheet 12 is installed, so that the heat generated by the semiconductor refrigeration sheet 12 can be discharged to the outside. The L-shaped structure of the heat transfer plate 11 facilitates cooling of the inside of the groove. Gallium crystallizes easily at low temperatures, so that gallium in the crude gallium solution crystallizes near the heat transfer plate 11. The heat transfer plate 11 is a metal block with corrosion resistance. A silica gel layer is provided on the surface of the heat transfer plate 11 inside the temperature control box 1 to prevent gallium crystals from solidifying on the surface of the heat transfer plate 11.

[0052] Working principle: When using the crude gallium purification device based on the longitudinal temperature gradient field, as the crude gallium liquid enters the injection box 15, the dispersion solution is dispersed toward the bottom of the dispersion tube 14 according to the structure arranged inside the dispersion tube 14, so that the dispersion tube 14 injects the crude gallium liquid into the temperature control box 1, and the corresponding auxiliary crystallization solution stored inside the temperature control box 1 flows into the temperature control box 1 through the liquid inlet pipe 3, and the solution placed inside the temperature control box 1 cooperates with the high-temperature tank 5 and the heating plate 4 to maintain the state of the crude gallium liquid entering. As the crude gallium liquid flows inside the temperature control box 1, the crystallization effect on gallium leaching purification is observed, and as the crystallization effect is achieved, the slide rail frame 13 is pushed to drive the dispersion tube 14 along the temperature control box 1. The upper end of the control box 1 moves in the direction of the slide rail, passes through the buffer tank 8 and the temperature transfer plate 11, and the buffer tank 8 exchanges heat to the outside through the exchange plate 9 arranged at the bottom to achieve full recycling of heat. The semiconductor refrigeration plate 12 arranged on one side of the temperature transfer plate 11 further reduces the internal solution temperature, so that the temperature inside the temperature control box 1 presents a stepped temperature gradient field as a whole. The results of gallium leaching, purification and crystallization are observed. According to the different concentrations or acidity solutions inside the temperature control box 1, the position of the dispersing cylinder 14 inside the temperature control box 1 for discharging materials is adjusted, so that the gallium purification and crystallization effect is further improved. Seed crystals are placed in the temperature control box 1 according to the needs of gallium crystallization to assist crystallization, thereby increasing the overall practicality.

[0053] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A crude gallium purification device based on a longitudinal temperature gradient field, comprising: A temperature control box (1) is configured as a rectangular box structure, and the temperature control box (1) is configured as an upper opening structure, and the temperature control box (1) is a crystallization purification temperature control and adjustment device for crude gallium purification; A dispersion cylinder (14), which is located above the opening of the temperature control box (1), and the dispersion cylinder (14) is a process equipment for gallium refining; The invention is characterized in that: a liquid discharge pipe (2) is equidistantly arranged on one side of the temperature control box (1), and a liquid inlet pipe (3) is equidistantly arranged on the other side of the temperature control box (1), and the liquid discharge pipe (2) and the liquid inlet pipe (3) are symmetrically arranged with an upper and lower displacement, and the temperature control box (1) is longitudinally arranged inside The temperature gradient field component provides a processing environment with different temperature zones for gallium purification and assists gallium crystallization; A slide rail frame (13) has two sides located on the upper end surface of the opening of the temperature control box (1) and slides thereon. The slide rail frame (13) is composed of a U-shaped frame body and an annular structure. The bottom end of the dispersion tube (14) penetrates the interior of the slide rail frame (13). The bottom end of the dispersion tube (14) is configured as a conical structure. A limiting frame (16) is provided on one side of the upper end of the dispersion tube (14). The interior of the limiting frame (16) is penetrated by one end of the injection box (15).

2. A crude gallium purification device based on a longitudinal temperature gradient field according to claim 1, characterized in that: Slide rails that slide with the slide rail frame (13) are arranged on both sides of the upper end of the opening of the temperature control box (1), and the interior of the temperature control box (1) is arranged as a stepped structure, and the lowest end of the stepped structure of the temperature control box (1) is flush with the bottom end of the drainage pipe (2).

3. The crude gallium purification device based on the longitudinal temperature gradient field according to claim 1, characterized in that: The temperature gradient field component comprises: A high temperature tank (5), which is arranged at the highest step position of the stepped structure of the temperature control box (1); A baffle plate (6) is arranged on the stepped structure surface of the temperature control box (1), and the baffle plate (6) is installed on one side of the high-temperature tank (5); A buffer tank (8) is arranged at a step position lower than the high-temperature tank (5) in the stepped structure of the temperature control box (1), and the buffer tank (8) and the high-temperature tank (5) are arranged in a stepped shape; A second baffle plate (10) is arranged on the stepped structure surface of the temperature control box (1), and the second baffle plate (10) is installed on one side of the buffer tank (8); The temperature transfer plate (11) is arranged at the corner of the stepped structure of the temperature control box (1), and the temperature transfer plate (11) is arranged on the surface of the second baffle plate (10) on one side of the buffer tank (8).

4. A crude gallium purification device based on a longitudinal temperature gradient field according to claim 3, characterized in that: A heating plate (4) is arranged at the bottom end of the high-temperature tank (5) located inside the temperature control box (1), and the heating surface of the heating plate (4) is arranged toward the high-temperature tank (5).

5. The crude gallium purification device based on the longitudinal temperature gradient field according to claim 3 is characterized in that: Inclined flow holes (7) are equidistantly arranged inside the baffle plate 1 (6), and the flow holes (7) inside the baffle plate 1 (6) connect the high-temperature tank (5) and the buffer tank (8), and the flow holes (7) are equidistantly arranged inside the buffer tank (8).

6. The crude gallium purification device based on the longitudinal temperature gradient field according to claim 3 is characterized in that: The bottom end of the buffer tank (8) is located inside the temperature control box (1) and is provided with an exchange plate (9), and the pipeline of the exchange plate (9) passes through the side wall surface of the temperature control box (1).

7. The device for purifying crude gallium based on a longitudinal temperature gradient field according to claim 3, characterized in that: The temperature transfer plate (11) is arranged in a stepped manner and is sealed and installed at the position of the second baffle plate (10) which fits the stepped structure surface of the temperature control box (1), and the temperature transfer plate (11) is installed at the cooling end of the semiconductor refrigeration plate (12), and the semiconductor refrigeration plate (12) is located inside the bottom end of the temperature control box (1).

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