Bottom heating device of monocrystalline silicon furnace cavity and pressure container
By dividing the graphite heater into multiple heating parts and optimizing its structure, the problem of excessive temperature caused by uneven heating at the bottom of the single crystal furnace is solved, and more efficient energy use and heating speed are achieved.
Patent Information
- Application Number
- CN202323592316.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2023-12-28
- Publication Date
- 2024-12-13
- Estimated Expiration
- 2033-12-28
AI Technical Summary
The design of the bottom heating device of the existing single crystal furnace causes the temperature in the crucible to be too high, causing the polycrystalline material to boil violently, the silicon liquid splash, and the problem of waste of electricity resources and cooling gas.
A single crystal silicon furnace cavity bottom heating device including a graphite heater and an electrode is designed, and the graphite heater is divided into a first heating part, a second heating part and a third heating part. The total heating area of the second heating part is the largest. By increasing the groove width and reducing the radial thickness, the resistance is improved to maximize heat generation and optimize the energy consumption usage of the heating area.
It effectively reduces energy consumption, improves the heating speed of the crucible, reduces the splashing of silicon liquid and waste of electricity resources, and improves the heating efficiency.
Smart Images
Figure CN222160471U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of single crystal furnaces, in particular to a bottom heating device and a pressure vessel of a single crystal silicon furnace cavity. Background Art
[0002] A single crystal furnace is a device that uses a graphite heater to melt polycrystalline materials such as polysilicon in an inert gas (mainly nitrogen and helium) environment and grows single crystals without dislocation using the Czochralski method. As we all know, the product quality of silicon rods lies in the control of the temperature in the furnace and the control of the cooling rate.
[0003] In the prior art, as shown in the accompanying drawings Figure 1 As shown, the quartz crucible 10 is installed on the crucible support device 11, and the quartz crucible 10 is surrounded by a graphite heater 12. The quartz crucible 10 is placed above a guide tube 13. By energizing the graphite heater 12, the heat generated by the graphite heater 12 heats the quartz crucible 10 to melt the polysilicon material. As can be seen from the figure, the top of the graphite heater is generally flush with the crucible, and its bottom is lower than the crucible, leaving a larger heating area to ensure that the boiler can be heated from top to bottom, and the top of the graphite heater is also above the liquid level of the crucible. Since the top and bottom of the graphite heater do not heat the material, but only keep it warm, and these two parts do not require too high a temperature, if the current conventional structure is used, it is easy to cause the temperature in the crucible to be too high, causing the polycrystalline material to boil violently, resulting in the silicon liquid splashing out, and on the other hand, it also causes a waste of electrical resources and cooling gas. Utility Model Content
[0004] In order to overcome the deficiencies of the prior art, one of the purposes of the present invention is to provide a bottom heating device for a single crystal silicon furnace cavity to solve the above-mentioned traditional problems.
[0005] The second object of the utility model is to provide a pressure vessel using the bottom heating device of the single crystal silicon furnace cavity, such as a single crystal furnace, and can also be a polycrystalline furnace, a gemstone furnace, etc.
[0006] One of the purposes of the utility model is achieved by the following technical solution:
[0007] A bottom heating device for a single crystal silicon furnace chamber comprises a graphite heater and an electrode, wherein the graphite heater comprises a heater body and electrode pins extending downward from opposite ends of the heater body, the electrode is used to be electrically connected to the electrode pins, the heater body comprises two main bodies, a first heating part, a second heating part and a third heating part respectively connected to the two main bodies, the second heating part is located between the first heating part and the third heating part, and the total heating area of the second heating part is greater than the total heating area of the first heating part, and the total heating area of the third heating part is less than or equal to the total heating area of the third heating part.
[0008] Preferably, the longitudinal heating area of the second heating part is 2-4 times the longitudinal heating area of the first heating part.
[0009] Preferably, the longitudinal heating area of the second heating part is 2.6 times the longitudinal heating area of the first heating part.
[0010] Preferably, the slot width of the second heating portion is greater than the slot width of the first heating portion.
[0011] Preferably, the slot width of the second heating portion is 1.2-1.6 times the slot width of the first heating portion.
[0012] Preferably, the slot width of the first heating portion is equal to the slot width of the third heating portion.
[0013] Preferably, a radial thickness of the second heating portion is smaller than a radial thickness of the first heating portion.
[0014] Preferably, the radial thickness of the second heating portion is 0.3-0.6 of the radial thickness of the first heating portion.
[0015] Preferably, the radial thickness of the first heating portion is 1.1-1.3 of the radial thickness of the third heating portion.
[0016] The second purpose of the utility model is achieved by the following technical solution:
[0017] A pressure vessel comprises the bottom heating device of the single crystal silicon furnace cavity described above.
[0018] Compared with the prior art, the beneficial effects of the present invention are:
[0019] 1. The bottom heating device of the single crystal silicon furnace cavity of the utility model is divided into a first heating part, a second heating part and a third heating part on the basis of the original graphite heater structure. According to the difference in the crucible heating area, the total heating area of the second heating part is the largest, so as to save heating energy for other parts and reduce energy consumption.
[0020] 2. The graphite heater of the device increases the slot width of the second heating part and / or reduces the radial thickness, thereby increasing the resistance of the second heating part under the same power to maximize the heat generation and improve the heating speed of the crucible. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] Figure 1 It is a diagram of the installation structure between the graphite heater and the crucible in the prior art;
[0022] Figure 2 The figure is a side structural schematic diagram of the graphite heater of the bottom heating device of the utility model.
[0023] In the figure: 10, quartz crucible; 11, crucible support device; 12, graphite heater; 13, guide tube; 20, two main body parts; 21, first heating part; 22, second heating part; 23, third heating part; 30, electrode pin. DETAILED DESCRIPTION
[0024] In order to make the above-mentioned purposes, features and advantages of the utility model more obvious and easy to understand, the specific implementation methods of the utility model are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the utility model. However, the utility model can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the utility model, so the utility model is not limited by the specific embodiments disclosed below.
[0025] In the description of the present invention, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, "plurality" means at least two, such as two, three, etc., unless otherwise clearly and specifically defined.
[0026] In the description of the present utility model, it is necessary to understand that when an element is considered to be "connected" to another element, it may be directly connected to another element or there may be intermediate elements at the same time. On the contrary, when an element is said to be "directly" connected to another element, there are no intermediate elements.
[0027] See also Figure 2, is a bottom heating device of a preferred embodiment of the utility model, which is used to be installed in a pressure vessel such as a single crystal silicon furnace to heat its materials. Specifically, the bottom heating device includes a graphite heater and an electrode, the graphite heater includes a heater body and electrode feet 30 extending downward from opposite ends of the heater body, the electrode is used to be electrically connected to the electrode feet 30, the heater body includes two main parts 20, a first heating part 21, a second heating part 22 and a third heating part 23 respectively connected to the two main parts 20, the two main parts 20 are electrically connected to the electrode feet 30, the first heating part 21 is used to heat the top of the crucible, the second heating part 22 is used to heat the middle of the crucible, and the third heating part 23 is used to heat the lower part of the crucible; the second heating part 22 is located between the first heating part 21 and the third heating part 23, and the total heating area of the second heating part 22 is greater than the total heating area of the first heating part 21, and the total heating area of the third heating part 23 is less than or equal to the total heating area of the third heating part 23.
[0028] The bottom heating device is divided into a first heating part 21, a second heating part 22 and a third heating part 23 based on the original graphite heater structure. According to the difference in the crucible heating area, the total heating area of the second heating part 22 is the largest to save heating energy for other parts and reduce energy consumption.
[0029] In this embodiment, the longitudinal heating area of the second heating part 22 is 2-4 times the longitudinal heating area of the first heating part 21. Preferably, the longitudinal heating area of the second heating part 22 is 2.6 times the longitudinal heating area of the first heating part 21.
[0030] Optionally, the slot width of the second heating portion 22 is greater than the slot width of the first heating portion 21. Preferably, the slot width of the second heating portion 22 is 1.2-1.6 times the slot width of the first heating portion 21. In other embodiments, the slot width of the first heating portion 21 is equal to the slot width of the third heating portion 23.
[0031] In other embodiments, the radial thickness of the second heating portion 22 is less than the radial thickness of the first heating portion 21. Optionally, the radial thickness of the second heating portion 22 is 0.3-0.6 of the radial thickness of the first heating portion 21. The radial thickness of the first heating portion 21 is 1.1-1.3 of the radial thickness of the third heating portion 23.
[0032] The above graphite heater increases the electrical resistance of the second heating part 22 by increasing the slot width and / or reducing the radial thickness of the second heating part 22 under the same power, so as to maximize the heat generation and increase the heating speed of the crucible.
[0033] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0034] The above-mentioned embodiments only express several implementation methods of the utility model, and the description is relatively specific and detailed, but it cannot be understood as limiting the scope of the utility model patent. It should be pointed out that for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the utility model, which all belong to the protection scope of the utility model. Therefore, the protection scope of the utility model patent shall be based on the attached claims.
Claims
1. A bottom heating device for a single crystal silicon furnace chamber, comprising a graphite heater and an electrode, wherein the graphite heater comprises a heater body and electrode pins extending downward from opposite ends of the heater body, wherein the electrode is used to be electrically connected to the electrode pins, and wherein: The heater body includes two main parts, a first heating part, a second heating part and a third heating part respectively connected to the two main parts, the second heating part is located between the first heating part and the third heating part, and the total heating area of the second heating part is larger than the total heating area of the first heating part, and the total heating area of the third heating part is less than or equal to the total heating area of the third heating part.
2. The bottom heating device of the single crystal silicon furnace chamber according to claim 1, characterized in that: The longitudinal heating area of the second heating part is 2-4 times the longitudinal heating area of the first heating part.
3. The bottom heating device of the single crystal silicon furnace chamber according to claim 2, characterized in that: The longitudinal heating area of the second heating part is 2.6 times the longitudinal heating area of the first heating part.
4. The bottom heating device of the single crystal silicon furnace chamber according to claim 1, characterized in that: The slot width of the second heating portion is greater than the slot width of the first heating portion.
5. The bottom heating device of the single crystal silicon furnace chamber according to claim 4, characterized in that: The slot width of the second heating portion is 1.2-1.6 times the slot width of the first heating portion.
6. The bottom heating device of the single crystal silicon furnace chamber according to claim 5, characterized in that: The slot width of the first heating portion is equal to the slot width of the third heating portion.
7. The bottom heating device of the single crystal silicon furnace chamber according to claim 1, characterized in that: A radial thickness of the second heating portion is smaller than a radial thickness of the first heating portion.
8. The bottom heating device of the single crystal silicon furnace chamber according to claim 7, characterized in that: The radial thickness of the second heating portion is 0.3-0.6 of the radial thickness of the first heating portion.
9. The bottom heating device of the single crystal silicon furnace chamber according to claim 8, characterized in that: The radial thickness of the first heating portion is 1.1-1.3 of the radial thickness of the third heating portion.
10. A pressure vessel, characterized in that: A bottom heating device for a single crystal silicon furnace chamber comprising the device described in any one of claims 1 to 9.