Radio frequency system and plasma etching equipment

Abstract

The utility model provides a radio frequency system used for plasma etching equipment, and the radio frequency system comprises a radio frequency generator which is used for generating a radio frequency signal; the impedance matcher is in signal connection with the radio frequency generator and is used for receiving and transmitting the radio frequency signal and self-modifying matched impedance according to the radio frequency signal; the coil assembly is used for receiving the radio frequency signal transmitted by the impedance matcher and generating a magnetic field, the coil assembly is fixed through a coil support, and wires forming the coil assembly are located on the same plane; and the connection box is used for electrically connecting the coil assembly to the impedance matcher, and the connection box comprises a connection box main body and a plurality of connection columns which penetrate through the bottom wall of the connection box main body and are used for being connected with the coil assembly. The utility model further provides plasma etching equipment. According to the radio frequency system and the plasma etching equipment provided by the invention, a uniform magnetic field can be formed on the surface of the substrate to be etched.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a radio frequency system and plasma etching equipment. Background Art

[0002] In the plasma etching process, the uniformity of plasma distribution on the substrate surface is an important factor affecting the consistency of etching rate in different areas of the substrate surface.

[0003] Typically, in etching equipment, plasma is generated under the action of a magnetic field generated by a radio frequency system, and the uniformity of the magnetic field distribution on the substrate surface largely determines the uniformity of the plasma distribution.

[0004] Therefore, a radio frequency system and a plasma etching device are needed to form a uniform magnetic field on the surface of a substrate to be etched. Utility Model Content

[0005] The purpose of the present application is to provide a radio frequency system and a plasma etching device to form a uniform magnetic field on the surface of a substrate to be etched.

[0006] In a first aspect, an embodiment of the present application provides a radio frequency system for plasma etching equipment, the radio frequency system comprising: a radio frequency generator for generating a radio frequency signal; an impedance matcher connected to the radio frequency generator signal, for receiving and transmitting the radio frequency signal and self-modifying the matching impedance according to the radio frequency signal; a coil group for receiving the radio frequency signal transmitted by the impedance matcher and generating a magnetic field, the coil group being fixed by a coil bracket, and the wires constituting the coil group being located in the same plane; and a connection box for electrically connecting the coil group to the impedance matcher, the connection box comprising a connection box body and a plurality of connection posts passing through the bottom wall of the connection box body for connecting to the coil group.

[0007] In some embodiments, the coil assembly includes an inner coil and an outer coil, the inner coil is located in a central region of the coil support, and the outer coil is located in an edge region of the coil support.

[0008] In some embodiments, the number of turns of the inner coil is 4 to 10 turns; and / or the number of turns of the outer coil is 3 to 5 turns.

[0009] In some embodiments, the inner coil includes a first conductive wire and a second conductive wire, the first conductive wire and the second conductive wire are arranged in an alternating manner; and a radial distance between the first conductive wire and the second conductive wire along the inner coil is 6 to 20 mm.

[0010] In some embodiments, two ends of the first wire are respectively connected to the first connecting cavity through a first through hole passing through the coil support, and two ends of the second wire are respectively connected to the second connecting cavity through a second through hole passing through the coil support, wherein the first connecting cavity and the second connecting cavity match corresponding connecting columns among the multiple connecting columns.

[0011] In some embodiments, the outer coil includes a third wire and a fourth wire, the third wire and the fourth wire are arranged in an alternating manner; and the distance between the third wire and the fourth wire along the radial direction of the outer coil is 6 to 20 mm.

[0012] In some embodiments, both ends of the third wire are respectively connected to the third connecting cavity through the third through hole passing through the coil support, and both ends of the fourth wire are respectively connected to the fourth connecting cavity through the fourth through hole passing through the coil support, wherein the third connecting cavity and the fourth connecting cavity match the corresponding connecting columns among the multiple connecting columns.

[0013] In some embodiments, the cross-section of the wire is rectangular.

[0014] In some embodiments, the connection box further includes a plurality of connection plates for connecting the plurality of connection posts to the impedance matcher, any one of the plurality of connection plates is a plane-symmetrical structure, and the symmetry planes of the plurality of connection plates overlap.

[0015] The radio frequency system provided in the present application includes a coil group for generating an induced magnetic field, and the wires constituting the coil group are arranged in the same plane, thereby improving the uniformity of the magnetic field generated by the coil group.

[0016] The radio frequency system provided in the present application also includes a connection box for electrically connecting the coil group to the impedance matcher, the connection box including a plurality of connection posts for connecting to the coil group and a plurality of connection plates for connecting the plurality of connection posts to the impedance matcher; any one of the plurality of connection plates is a plane-symmetrical structure, and the symmetry planes of the plurality of connection plates overlap, so as to further improve the uniformity of the magnetic field generated by the coil group.

[0017] In a second aspect, an embodiment of the present application provides a plasma etching device, comprising: a process chamber; and the radio frequency system described in the first aspect of the present application, wherein the radio frequency system is located above the top wall of the process chamber; wherein a dielectric window is provided on the top wall of the process chamber, for allowing the magnetic field generated by the radio frequency system to pass through the dielectric window into the interior of the process chamber.

[0018] The beneficial effects of the plasma etching device provided in the embodiments of the present application include but are not limited to:

[0019] The plasma etching equipment provided in the embodiment of the present application can form a uniform magnetic field in the process chamber by using the radio frequency system of the present application and adjusting the distance between the wire of the radio frequency system and the dielectric window, thereby improving the uniformity of the plasma formed in the process chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The following drawings describe in detail the exemplary embodiments disclosed in this application. The same reference numerals represent similar structures in several views of the drawings. Those skilled in the art will understand that these embodiments are non-limiting, exemplary embodiments, and the drawings are only used for the purpose of illustration and description, and are not intended to limit the scope of this application. Other embodiments may also accomplish the inventive intent in this application. It should be understood that the drawings are not drawn to scale. Among them:

[0021] Figure 1 It is a schematic diagram of the structure of a radio frequency system and a plasma etching device according to some embodiments of the present application;

[0022] Figure 2 is a schematic structural diagram of a first end surface of a coil support according to some embodiments of the present application;

[0023] Figure 3 is a schematic structural diagram of a second end surface of a coil support according to some embodiments of the present application;

[0024] Figure 4 Schematic diagram of the magnetic field intensity distribution formed on the wafer surface by coil groups with different numbers of inner coil turns;

[0025] Figure 5 is a schematic diagram of the structure of a connection box according to some embodiments of the present application;

[0026] Figure 6 It is a schematic structural diagram of a bottom wall and a connecting piece of a connection box according to some embodiments of the present application;

[0027] Figure 7 is a top view of a connection box according to some embodiments of the present application; and

[0028] Figure 8 Schematic diagram of the structure of the connecting piece according to some embodiments of the present application. DETAILED DESCRIPTION

[0029] The following description provides specific application scenarios and requirements of the present application, with the purpose of enabling those skilled in the art to make and use the content in the present application. It will be apparent to those skilled in the art that various local modifications to the disclosed embodiments are apparent, and the general principles defined herein may be applied to other embodiments and applications without departing from the spirit and scope of the present application. Therefore, the present application is not limited to the embodiments shown, but to the widest scope consistent with the claims.

[0030] The present application provides a radio frequency system for plasma etching equipment, the radio frequency system comprising: a radio frequency generator for generating a radio frequency signal; an impedance matcher connected to the radio frequency generator signal, for receiving and transmitting the radio frequency signal and self-modifying the matching impedance according to the radio frequency signal; a coil group for receiving the radio frequency signal transmitted by the impedance matcher and generating a magnetic field, the coil group being fixed by a coil support, and the wires constituting the coil group being located in the same plane; and a connection box for electrically connecting the coil group to the impedance matcher, the connection box comprising a connection box body and a plurality of connection posts passing through the bottom wall of the connection box body for connecting to the coil group, the plurality of connection posts being used to connect to the coil group.

[0031] The radio frequency system provided in the present application improves the uniformity of the magnetic field generated by the coil group by arranging the wires constituting the coil group in the same plane.

[0032] The radio frequency system provided in the present application will be described in detail below in conjunction with the embodiments and drawings.

[0033] Figure 1 It is a schematic diagram of the structure of a radio frequency system and a plasma etching device according to some embodiments of the present application; Figure 2 is a schematic structural diagram of a first end surface of a coil support according to some embodiments of the present application; and Figure 3 Schematic diagram of the structure of the second end surface of the coil support according to some embodiments of the present application.

[0034] refer to Figure 1 An embodiment of the present application provides a radio frequency system for plasma, which includes a radio frequency generator 100, an impedance matcher 200, a coil assembly 300, and a connection box 400.

[0035] The RF generator 100 is used to generate a RF signal. In some embodiments, a first end of the RF generator 100 is connected to the impedance matcher 200, and a second end of the RF generator 100 is grounded. The grounding of the RF generator 100 can safely guide and process the charge and current caused by the high-frequency electric field and discharge, which helps to reduce the risk of electric shock and discharge shock to the equipment and operators, and ensure safe operation.

[0036] The impedance matcher 200 is used to receive and transmit the radio frequency signal and self-modify the matching impedance according to the radio frequency signal. The impedance matcher 200 can achieve low-loss loading of the radio frequency signal by adjusting its own matching impedance.

[0037] In some embodiments, the impedance matcher 200 is electrically connected to the RF generator 100 and the coil assembly 300 respectively.

[0038] The coil assembly 300 is used to receive the radio frequency signal transmitted by the impedance matcher and generate a magnetic field. In some embodiments, the coil assembly 300 is fixed by a coil support 500, and the wires constituting the coil assembly 300 are all located in the same plane to improve the uniformity of the generated magnetic field.

[0039] In some embodiments, the cross-section of the wire is rectangular.

[0040] In some embodiments, the length of the wire along the radial direction of the coil assembly 300 is 3 to 6 mm, and optionally, the length of the wire along the radial direction of the coil assembly 300 is 3 mm, 5 mm, or 6 mm. In some embodiments, the length of the wire perpendicular to the coil support 500 is 6 to 12 mm, and optionally, the length of the wire perpendicular to the coil support 500 is 6 mm, 8 mm, or 12 mm.

[0041] In some embodiments, the material of the conductive line includes copper.

[0042] refer to Figure 2 In some embodiments, the coil assembly 300 includes an inner coil 301 and an outer coil 302, wherein the inner coil 301 is located in the central area of ​​the coil support 500, and the outer coil is located in the edge area of ​​the coil support 500. Specifically, the central area of ​​the coil support 500 refers to an area extending radially outward by 40 to 100 mm from the central point of the coil support 500; and the edge area of ​​the coil support 500 refers to an area extending radially inward by 20 to 80 mm from the outer edge of the coil support 500. In some embodiments, the distance between the outermost coil of the inner coil 301 and the innermost coil of the outer coil is 40 to 80 mm.

[0043] In some embodiments, the number of turns of the inner coil 301 is 4 to 10. Figure 4As shown, when the number of turns of the outer coil is 3 turns and the number of turns of the inner coil 301 increases from 3 turns to 4 turns, the magnetic field generated by the coil group 300 is schematically illustrated along the radial direction of the coil. Rectangle 11 in the figure is a schematic diagram of the position of the wafer in the magnetic field. It can be seen from the figure that when the number of turns of the inner coil 301 increases from 3 turns to 4 turns, the highest point of the induced magnetic field intensity moves out of the area where the wafer is located, so that the magnetic field distribution in the area where the wafer is located is more uniform, avoiding the appearance of an M-shaped magnetic field in the area of ​​the wafer similar to when the number of turns of the inner coil 301 increases from 3 turns. The M-shaped magnetic field refers to the normalized magnetic field intensity curve having two sharp peaks.

[0044] refer to Figure 2 In some embodiments, the inner coil 301 includes a first wire 301a and a second wire 301b, and the first wire 301a and the second wire 301b are arranged alternately. In some embodiments, the first wire 301a and the second wire 301b are 180° rotationally symmetrically distributed about the center of the coil support 500, so that the magnetic field generated by the inner coil 301 is evenly distributed.

[0045] The distance between the first conductive wire 301a and the second conductive wire 301b along the radial direction of the inner coil 301 is 6 to 20 mm.

[0046] refer to Figure 1 and Figure 3 In some embodiments, both ends of the first wire 301a pass through the first through hole penetrating the coil support 500 and are connected to the first connecting cavity 301c, and the first connecting cavity 301c is used to connect the first wire 301a to the connecting box 400.

[0047] In some embodiments, two ends of the second wire 301b pass through the second through hole penetrating the coil support 500 and are connected to the second connection cavity 301d, and the second connection cavity 301d is used to connect the second wire 301b to the connection box 400.

[0048] In some embodiments, the number of turns of the outer coil is 3 to 5 turns.

[0049] refer to Figure 2 In some embodiments, the outer coil includes a third wire 302a and a fourth wire 302b, and the third wire 302a and the fourth wire 302b are arranged alternately. In some embodiments, the third wire 302a and the fourth wire 302b are 180° rotationally symmetrically distributed about the center of the coil support 500, so that the magnetic field generated by the outer coil is evenly distributed.

[0050] In some embodiments, the distance between the third conductive wire 302a and the fourth conductive wire 302b along the radial direction of the outer coil is 6-20 mm.

[0051] refer to Figure 1 and Figure 3 In some embodiments, the two ends of the third wire 302a are respectively connected to the third connecting cavity 302c through the third through hole penetrating the coil support 500, and the two ends of the fourth wire 302b are respectively connected to the fourth connecting cavity 302d through the fourth through hole penetrating the coil support 500.

[0052] In some embodiments, the first connecting cavity 301c, the second connecting cavity 301d, the third connecting cavity 302c, and the fourth connecting cavity 302d are distributed in a linear array.

[0053] In some embodiments, the first connecting cavity 301c, the second connecting cavity 301d, the third connecting cavity 302c and the fourth connecting cavity 302d are cylindrical with an opening at one end, and the inner diameters of the first connecting cavity 301c, the second connecting cavity 301d, the third connecting cavity 302c and the fourth connecting cavity 302d are 8 to 12 mm. In some embodiments, the wall thickness of the peripheral wall of the first connecting cavity 301c, the second connecting cavity 301d, the third connecting cavity 302c and the fourth connecting cavity 302d is 1 to 2 mm. In some embodiments, the depth of the first connecting cavity 301c, the second connecting cavity 301d, the third connecting cavity 302c and the fourth connecting cavity 302d is 30 to 60 mm.

[0054] In some embodiments, the materials of the first connection cavity 301c, the second connection cavity 301d, the third connection cavity 302c and the fourth connection cavity 302d are conductive materials. In some embodiments, the materials of the first connection cavity 301c, the second connection cavity 301d, the third connection cavity 302c and the fourth connection cavity 302d include copper.

[0055] In some embodiments, the coil support 500 is circular or approximately circular.

[0056] In some embodiments, the coil support 500 includes a main disk 501 for fixing the coil group 300 and a plurality of fixing members 502 integrally connected to the main disk 501 and located at the outer edge of the main disk 501, wherein the fixing members 502 are used to connect the coil support 500 to the cavity support (not shown in the figure).

[0057] In some embodiments, the material of the coil support 500 includes ceramic and / or polymer material to avoid generating an induced magnetic field during the transmission of the radio frequency signal.

[0058] In some embodiments, the connection box 400 is used for power distribution and electrically connecting the coil assembly 300 to the impedance matcher 200 .

[0059] Figure 5 is a schematic diagram of the structure of a connection box according to some embodiments of the present application; Figure 6 is a schematic structural diagram of a bottom wall and a connecting piece of a connection box according to some embodiments of the present application, that is, a top view of the connection box without a top wall; Figure 7 is a top view of a connection box according to some embodiments of the present application; and Figure 8 Schematic diagram of the structure of the connecting piece according to some embodiments of the present application.

[0060] refer to Figures 5 to 8 In some embodiments, the connection box 400 includes a connection box body 401 and a plurality of connection posts 402 passing through the bottom wall of the connection box body 401 for connecting with the coil assembly 300. The plurality of connection posts 402 are matched with the first connection cavity 301c, the second connection cavity 301d, the third connection cavity 302c and the fourth connection cavity 302d, respectively, so that the two ends of the first wire 301a and the two ends of the second wire 301b are electrically connected to form a first closed loop; and the two ends of the third wire 302a and the two ends of the fourth wire 302b are electrically connected to form a second closed loop, so that the inner coil and the outer coil can generate an induced magnetic field.

[0061] In some embodiments, the diameter of the connecting column 402 is 7.9-11.9 mm. In some embodiments, the length of the connecting column 402 is 100-150 mm.

[0062] In some embodiments, a threaded connection hole is provided at one end of the connection column 402 facing the connection box 400 .

[0063] In some embodiments, the material of the connection pillar 402 is a conductive material. In some embodiments, the material of the connection pillar 402 is copper.

[0064] In some embodiments, the bottom wall of the connection box 400 is further provided with a fixing block 404 matching the plurality of connection pillars 402, for fixing the plurality of connection pillars 402. In some embodiments, the fixing block 404 is provided with a through hole penetrating the fixing block, and the plurality of connection pillars 402 extend into the interior of the connection box body through the through hole.

[0065] In some embodiments, the connection box 400 further includes a plurality of connection pieces 403 for connecting the plurality of connection posts 402 to the impedance matcher 200 .

[0066] In some embodiments, any one of the plurality of connecting sheets 403 is a plane-symmetrical structure, and the symmetry planes of the plurality of connecting sheets coincide.

[0067] The multiple connecting pieces 403 will generate an induced magnetic field when transmitting radio frequency signals. Arranging the multiple connecting pieces 403 in a plane-symmetrical manner can make the generated induced magnetic field evenly distributed, and have a more consistent impact on different areas of the magnetic field generated by the coil group 300 for plasma generation, thereby avoiding uneven plasma distribution caused by uneven magnetic field strength in different areas of the magnetic field for plasma generation.

[0068] In some embodiments, the plurality of connecting pieces 403 are in an inverted T-shape, including a horizontal portion 403a and a vertical portion 403b. The length of the horizontal portion 403a can be set to different models according to actual needs.

[0069] In some embodiments, the horizontal portion 403a is connected to a first connection portion 403c, and the first connection portion 403c is configured to be connected to the plurality of connection posts 402. In some embodiments, the first connection portion 403c is provided with a first connection hole 403e penetrating the first connection portion 403, and a conductive bolt passes through the first connection hole 403e to be connected to the threaded connection hole of the connection post 402.

[0070] In some embodiments, the number of the first connecting portions 403c is two, which are symmetrically disposed at two ends of the horizontal portion 403a and are configured to connect the two connecting posts 402 connected to different wires in the same coil group.

[0071] In some embodiments, a first end of the vertical portion 403 b is connected to the horizontal portion 403 a , and a second end of the vertical portion 403 b is connected to a second connection portion 403 f , which is configured to be connected to the impedance matcher 200 .

[0072] In some embodiments, the second connection portion 403f is located on the outside of the connection box body 401, and the second connection portion 403f is provided with a second connection hole 403g penetrating the second connection portion 403f, and a conductive bolt passes through the second connection hole 403g to connect the second connection portion 403f to the impedance matcher 200.

[0073] In some embodiments, the horizontal portion 403a, the vertical portion 403b, the first connecting portion 403c, and the second connecting portion 403f are integrally connected.

[0074] In some embodiments, the material of the connecting sheet 403 includes copper.

[0075] In some embodiments, when the RF system is working, the RF generator 100 generates a RF signal, and the RF signal is modified by the impedance matcher 200 and transmitted to the coil group 300 by the connection box 400. The coil group 300 generates an induced magnetic field under the action of the RF signal for plasma generation.

[0076] The beneficial effects of the radio frequency system provided by the embodiments of the present application include but are not limited to the following:

[0077] The radio frequency system provided in the present application includes a coil group for generating an induced magnetic field. The conductive wires constituting the coils are arranged in the same plane, thereby improving the uniformity of the magnetic field generated by the coil group.

[0078] The radio frequency system provided in the present application also includes a connection box for electrically connecting the coil group to the impedance matcher, the connection box including a plurality of connection posts for connecting to the coil group and a plurality of connection plates for connecting the plurality of connection posts to the impedance matcher; any one of the plurality of connection plates is a plane-symmetrical structure, and the symmetry planes of the plurality of connection plates overlap, so as to further improve the uniformity of the magnetic field generated by the coil group.

[0079] The embodiment of the present application further provides a plasma etching device, including: a process chamber 600 and a radio frequency system provided in the embodiment of the present application, wherein the radio frequency system is located above the top wall of the process chamber 600 .

[0080] In some embodiments, a dielectric window 601 is disposed on the top wall of the process chamber 600 , so as to allow the magnetic field generated by the radio frequency system to pass through the dielectric window 601 and enter the interior of the process chamber 600 .

[0081] In some embodiments, the material of dielectric window 601 includes ceramic.

[0082] In some embodiments, the coil assembly 300 is disposed toward the dielectric window 601 , and the distance between the wire of the coil assembly 300 and the dielectric window 601 is 5 to 19 mm.

[0083] In some embodiments, a base 700 for supporting a wafer is further disposed inside the process chamber 600 .

[0084] In some embodiments, the plasma etching equipment further includes a molecular pump 800 , which is disposed at the bottom of the base 700 to maintain the vacuum degree of the process chamber 600 .

[0085] The beneficial effects of the plasma etching device provided in the embodiments of the present application include but are not limited to:

[0086] The plasma etching equipment provided in the embodiment of the present application can form a uniform magnetic field in the process chamber by using the radio frequency system of the present application and adjusting the distance between the wire of the radio frequency system and the dielectric window, thereby improving the uniformity of the plasma formed in the process chamber.

[0087] It should be noted that different embodiments may produce different beneficial effects. In different embodiments, the beneficial effects that may be produced may be any one or a combination of the above, or any other beneficial effects that may be obtained.

[0088] The basic concepts have been described above. Obviously, for those skilled in the art, the above detailed disclosure is only for example and does not constitute a limitation of this specification. Although not explicitly stated here, those skilled in the art may make various modifications, improvements and corrections to this application. Such modifications, improvements and corrections are suggested in this specification, so such modifications, improvements and corrections still belong to the spirit and scope of the exemplary embodiments of this application.

[0089] It should be noted that in the description of this application, unless otherwise clearly specified and limited, the terms "install", "connect", "connect", and "fix" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a rotating connection or a sliding connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood in combination with specific circumstances.

[0090] In addition, when terms such as "first", "second", and "third" are used in the specification of this application to describe various features, these terms are only used to distinguish these features and cannot be understood as indicating or implying the relationship between the features, the relative importance, or implicitly indicating the number of features indicated.

[0091] In addition, the present specification describes exemplary embodiments by reference to idealized exemplary cross-sectional views and / or plan views and / or stereograms. Therefore, differences from the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are foreseeable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but should include deviations in shapes caused by, for example, manufacturing. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to illustrate the actual shapes of the regions of the device nor to limit the scope of the exemplary embodiments.

[0092] At the same time, the present application uses specific words to describe the embodiments of this specification. For example, "one embodiment", "an embodiment", and / or "some embodiments" refer to a certain feature, structure or characteristic related to at least one embodiment of the present application. Therefore, it should be emphasized and noted that "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more in different positions in the present application does not necessarily refer to the same embodiment. In addition, some features, structures or characteristics in one or more embodiments of the present application can be appropriately combined.

[0093] Similarly, it should be noted that in order to simplify the description of the disclosure of this application and thus help understand one or more embodiments of the invention, in the above description of the embodiments of this application, multiple features are sometimes combined into one embodiment, figure or description thereof. However, this disclosure method does not mean that the features required by the object of this application are more than the features mentioned in the claims. In fact, the features of the embodiments are less than all the features of the single embodiment disclosed above.

[0094] Finally, it should be understood that the embodiments described in this application are only used to illustrate the principles of the embodiments of the present application. Other variations may also fall within the scope of the present application. Therefore, as an example and not a limitation, the alternative configurations of the embodiments of the present application may be considered to be consistent with the teachings of the present application. Accordingly, the embodiments of the present application are not limited to the embodiments explicitly introduced and described in the present application.

Claims

1. A radio frequency system for plasma etching equipment, It is characterized in that The radio frequency system comprises: A radio frequency generator, used for generating a radio frequency signal; An impedance matcher, connected to the RF generator signal, for receiving and transmitting the RF signal and self-modifying the matching impedance according to the RF signal; a coil assembly, used for receiving the radio frequency signal transmitted by the impedance matcher and generating a magnetic field, wherein the coil assembly is fixed by a coil support, and the wires constituting the coil assembly are all located in the same plane; and The connection box is used to electrically connect the coil group to the impedance matcher. The connection box includes a connection box body and a plurality of connection posts passing through a bottom wall of the connection box body and used to connect with the coil group.

2. The radio frequency system according to claim 1, It is characterized in that The coil assembly includes an inner coil and an outer coil, the inner coil is located in a central area of ​​the coil support, and the outer coil is located in an edge area of ​​the coil support.

3. The radio frequency system according to claim 2, It is characterized in that The number of turns of the inner coil is 4 to 10 turns; and / or the number of turns of the outer coil is 3 to 5 turns.

4. The radio frequency system according to claim 2, It is characterized in that The inner coil comprises a first conductive wire and a second conductive wire, the first conductive wire and the second conductive wire are arranged in a staggered manner; and the interval between the first conductive wire and the second conductive wire along the radial direction of the inner coil is 6 to 20 mm.

5. The radio frequency system according to claim 4, It is characterized in that The two ends of the first wire are respectively connected to the first connecting cavity through the first through hole penetrating the coil support, and the two ends of the second wire are respectively connected to the second connecting cavity through the second through hole penetrating the coil support, wherein the first connecting cavity and the second connecting cavity match the corresponding connecting columns among the multiple connecting columns.

6. The radio frequency system according to claim 2, It is characterized in that The outer coil includes a third wire and a fourth wire, the third wire and the fourth wire are arranged in a staggered manner; and the distance between the third wire and the fourth wire along the radial direction of the outer coil is 6 to 20 mm.

7. The radio frequency system according to claim 6, It is characterized in that The two ends of the third wire are respectively connected to the third connecting cavity through the third through hole penetrating the coil support, and the two ends of the fourth wire are respectively connected to the fourth connecting cavity through the fourth through hole penetrating the coil support, wherein the third connecting cavity and the fourth connecting cavity match the corresponding connecting columns among the multiple connecting columns.

8. The radio frequency system according to claim 1, It is characterized in that The cross section of the wire is rectangular.

9. The radio frequency system according to claim 1, It is characterized in that The connection box further comprises a plurality of connection plates for connecting the plurality of connection posts with the impedance matcher, any one of the plurality of connection plates is a plane-symmetrical structure, and the symmetric planes of the plurality of connection plates overlap.

10. A plasma etching device, It is characterized in that include: Process chamber; as well as The radio frequency system according to any one of claims 1 to 9, wherein the radio frequency system is located above the top wall of the process chamber; Wherein, a dielectric window is provided on the top wall of the process chamber, so as to allow the magnetic field generated by the radio frequency system to pass through the dielectric window and enter the interior of the process chamber.

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