Etching end point detection device

Abstract

The utility model provides an etching end point detection device which is arranged on the outer side of a first side wall of a reaction chamber, and the first side wall is provided with a through hole. The device comprises a special-shaped valve, a detection window and a condensing lens which are sequentially arranged towards the outer side along the first side wall. And a through channel capable of being opened and closed is arranged in the special-shaped valve. Wafer emission spectral lines in the reaction chamber sequentially pass through the through hole, the through channel and the detection window and then all enter the condensing lens. The device further comprises a control unit, and the control unit is electrically connected with the special-shaped valve and used for controlling the special-shaped valve to be opened or closed so as to open and close the through channel. The device realizes controllable spatial isolation of the detection window and the reaction chamber, can close the special-shaped valve to replace the detection window at the end point detection reaction gap, avoids cavity opening replacement, and quickly resets after replacement, so that the stability and the utilization rate of the machine are improved; and the special-shaped valve can be closed to protect the detection window from plasma corrosion when the end point detection is not carried out, so that the service life of the detection window is prolonged.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to an etching endpoint detection device. Background Art

[0002] Etching endpoint detection based on a spectrometer is a commonly used etching endpoint determination method in current wafer production. It receives spectral information during the etching reaction on the wafer surface through a sapphire detection window on the side wall of the etching chamber, and transmits it to the back-end spectral analysis system via optical fiber. The reaction stage is determined by the change in the emission spectrum, thereby determining the etching endpoint. In this method, since the detection window directly faces the inside of the chamber, it is affected by plasma corrosion and deposition of reaction by-products, and the light transmittance of the detection window will gradually decrease, resulting in reduced accuracy, stability and sensitivity of endpoint detection, and the detection window needs to be replaced regularly. Currently, the replacement of the detection window requires opening the chamber, which has a negative impact on equipment stability and machine utilization.

[0003] Therefore, a new etching endpoint detection device is needed to solve the problem that the detection window is susceptible to plasma corrosion and reaction by-product deposition, resulting in reduced light transmittance. Utility Model Content

[0004] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide an etching endpoint detection device for solving the problem in the prior art that the detection window is susceptible to plasma corrosion and deposition of reaction by-products, resulting in reduced light transmittance.

[0005] An embodiment of the present application provides an etching endpoint detection device, which is arranged on the outside of a first side wall of a reaction chamber, wherein a through hole is arranged on the first side wall, and is characterized in that the endpoint detection device comprises: a special-shaped valve, a detection window and a focusing lens which are arranged sequentially outward along the first side wall, wherein the special-shaped valve comprises an openable and closable through channel, and wherein the special-shaped valve and the detection window are configured such that emission spectral lines of the wafer in the reaction chamber are all incident on the focusing lens after passing through the through hole, the through channel and the detection window sequentially; and a control unit, wherein the control unit is electrically connected to the special-shaped valve and is used to control the opening or closing of the special-shaped valve to open and close the through channel.

[0006] In some embodiments, the first end and the second end of the through channel are respectively located on two parallel planes, the first end of the through channel is fixedly connected to the first side wall of the reaction chamber, and the second end of the through channel is detachably connected to the first side of the detection window.

[0007] In some embodiments, the inner contour of the through channel is greater than or equal to the outer contour of the optical path channel formed after the wafer emission spectrum line passes through the through hole.

[0008] In some embodiments, the size of the detection window is greater than or equal to the outer contour of the optical path channel projected onto the plane where the detection window is located.

[0009] In some embodiments, the focusing lens is fixedly connected to a second side of the detection window relative to the through-channel, and a size of the focusing lens is adapted to a size of the detection window.

[0010] In some embodiments, the special-shaped valve includes a valve body, a valve plate and a driving mechanism. The valve plate is movably arranged on the valve body for opening and closing the through channel. The driving mechanism is connected to the valve plate. The control unit is electrically connected to the driving mechanism for controlling the movement of the valve plate.

[0011] In some embodiments, the first end of the through channel is fixedly connected to the first side wall of the reaction chamber via a first flange, and the second end of the through channel is detachably connected to the first side of the detection window via a second flange. A recess is provided on the connecting surface between the second flange and the first side of the detection window, and the recess is embedded in the first side of the detection window.

[0012] In some embodiments, a perfluororubber sealing ring is respectively provided at the fixed connection between the first flange and the through hole and at the connection between the second flange recess and the detection window.

[0013] In some embodiments, the surface of the through-channel inside the valve body, the surface of the valve plate, and the surface of the first flange and the surface of the second flange are all provided with an anti-corrosion layer.

[0014] In some embodiments, it also includes an optical fiber, a spectrometer and a data processing control unit, one end of the optical fiber is connected to the focusing lens, and the other end of the optical fiber is connected to the spectrometer. The data processing control unit is electrically connected to the spectrometer for acquiring and processing spectral data.

[0015] As described above, an etching endpoint detection device of the present application has the following beneficial effects: controllable spatial isolation between the detection window and the reaction chamber is achieved, and the detection window can be replaced by closing the special-shaped valve in the endpoint detection reaction gap to avoid opening the chamber for replacement. After replacing the detection window, the machine can be quickly restored, thereby improving the stability and utilization rate of the machine. When the transmittance of the detection window decreases due to plasma corrosion, the detection window can be replaced at any time to ensure the accuracy, stability and sensitivity of the endpoint detection at all times; when the endpoint detection is not performed, the special-shaped valve can be closed to protect the detection window from plasma corrosion, thereby extending its service life. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The following figures describe in detail the exemplary embodiments disclosed in this application. The same reference numerals represent similar structures in several views of the drawings. Those skilled in the art will understand that these embodiments are non-limiting, exemplary embodiments, and the drawings are only for the purpose of illustration and description, and are not intended to limit the scope of this application. Other embodiments may also accomplish the inventive intent in this application. It should be understood that the drawings are not drawn to scale.

[0017] in:

[0018] Figure 1 is a schematic diagram of an etching endpoint detection device shown in some embodiments;

[0019] Figure 2 yes Figure 1 Schematic diagram of the through hole in the side wall of the reaction chamber;

[0020] Figure 3 is a schematic diagram of an etching endpoint detection device according to some embodiments of the present application;

[0021] Figure 4 yes Figure 3 Schematic diagram of the optical path range of the emission spectrum line defined by the middle wafer and the side wall through holes;

[0022] Figure 5 yes Figure 4 Schematic diagram of the outline of an irregular geometric body with a medium optical path range located inside a special-shaped valve;

[0023] Figure 6 is a schematic diagram of a blind hole in a chamber side wall according to some embodiments of the present application;

[0024] Figure 7 It is a schematic diagram of a second flange and a detection window according to some embodiments of the present application. DETAILED DESCRIPTION

[0025] The following description provides specific application scenarios and requirements of the present application, with the purpose of enabling those skilled in the art to make and use the content in the present application. It will be apparent to those skilled in the art that various local modifications to the disclosed embodiments are apparent, and the general principles defined herein may be applied to other embodiments and applications without departing from the spirit and scope of the present application. Therefore, the present application is not limited to the embodiments shown, but to the widest scope consistent with the claims.

[0026] In some embodiments, a method for determining the etching endpoint in wafer production is to receive the spectral information during the etching reaction process through a sapphire detection window on the side wall of the etching chamber, transmit it to the back-end spectral analysis system through an optical fiber, and determine the reaction stage by the change in the emission spectrum, thereby determining the etching endpoint. Figure 1 and Figure 2 As shown, in some embodiments, a through hole 102 is opened on the side wall 101 of the etching chamber 103, and a detection window 105 is installed in the through hole 102 on the side wall 101. A focusing lens 106 is installed closely outside the detection window 105 to collect spectral information transmitted through the detection window 105 during the etching reaction of the wafer 104, and transmit it to the spectrum analyzer 108 and the control system 109 through the optical fiber 107. The control system 109 determines the reaction stage based on the received spectral changes, thereby determining the etching end point and ending the etching process.

[0027] In the above embodiment, the detection window 105 is installed on the side wall 101 of the etching chamber 103, directly facing the inside of the etching chamber 103, and in close contact with the plasma used for etching. Affected by plasma corrosion and deposition of reaction byproducts, the light transmittance of the detection window 105 will gradually decrease, resulting in reduced accuracy, stability and sensitivity of endpoint detection, and the detection window 105 needs to be replaced regularly. When the detection window 105 is replaced, the etching chamber 103 is in an open state, which has a negative impact on the stability of the equipment and the utilization rate of the machine.

[0028] In view of the above problems, the embodiment of the present application provides an etching endpoint detection device, which uses an intermediate mechanism to keep the detection window away from the through hole on the side wall of the etching chamber, and isolates the detection window from the etching chamber space in appropriate scenarios, that is, reducing the contact time between the detection window and the plasma used for etching, and extending the usable time of a single detection window. In addition, when replacing the detection window, the etching chamber can also be kept airtight, which is beneficial to the stability of the equipment and the utilization rate of the machine.

[0029] The technical solution of the present invention is described in detail below in conjunction with the embodiments and drawings.

[0030] Figure 3 It is a cross-sectional view of an etching endpoint detection device shown in some embodiments of the present application. The etching endpoint detection device is arranged on the outside of the first side wall 11 of the reaction chamber 10, and the first side wall 11 is provided with a through hole 12. During the etching process of the wafer, the spectrum generated by the etching reaction on the surface of the wafer 3 can be detected through the through hole 12. The endpoint detection device includes: a special-shaped valve 20, a detection window 4 and a focusing lens 5 arranged outward in sequence along the first side wall 11. The special-shaped valve 20 includes a through channel 21 that can be opened and closed. The configuration relationship between the special-shaped valve 20 and the detection window 4 is: the emission spectrum 301 of the wafer 3 in the reaction chamber 10 passes through the through hole 12, the through channel 21 and the detection window 4 in sequence, and then all enters the focusing lens 5. The etching endpoint detection device also includes a control unit (not shown). The control unit is electrically connected to the special-shaped valve 20, and is used to control the opening or closing of the special-shaped valve 20 to open and close the through channel 21.

[0031] Figure 4 yes Figure 3 Schematic diagram of the optical path range of the emission spectrum line 301 defined by the wafer 3 and the through hole 12 on the side wall. As a preferred embodiment, the through hole 12 on the first side wall 11 of the reaction chamber 10 is circular. Assume that the two points where the diameter of the through hole 12 perpendicular to the surface of the wafer 3 intersects with the circumference of the through hole 12 are D and E respectively, the two points where the diameter of the through hole 12 parallel to the surface of the wafer 3 intersects with the circumference of the through hole 12 are J and K respectively, the two points where the diameter of the wafer 3 perpendicular to the first side wall 11 on the surface of the wafer 3 intersects with the circumference of the wafer 3 are A and B respectively, and the two points where the diameter of the wafer 3 parallel to the first side wall 11 on the surface of the wafer 3 intersects with the circumference of the wafer 3 are H and I respectively. Among them, the extension line DG of the AD line, the extension line EF of the BE line, the extension line KL of the HK line, and the extension line JM of the IJ line are the typical contour lines of the optical paths of the emission spectrum lines 301 that are emitted from the wafer 3 and pass through the through hole 12 on the first side wall 11 respectively. Similarly, by traversing the entire circumference, the outline of the entire optical path can be obtained. If a plane parallel to the first side wall 11 is set at a distance h from the outer side of the first side wall 11 (refer to Figure 5 As shown), enclosed with the plane where the through hole 12 is located, an irregular geometric body R is formed (reference Figure 5 As shown). The angles between the four outermost edges DG, EF, JM, and KL of the irregular geometric body R and the horizontal projection plane are α, β, θ, and θ respectively, where α, β, and θ are not equal. The first bottom surface DJEK corresponds to the through hole 12 on the first side wall 11; the second bottom surface GMFL is determined by the height h, and the height h is not limited.

[0032] Any spatial contour including the irregular geometric body R can be used as the through-channel 21 of the special-shaped valve 20 in some embodiments of the present application (see Figure 3 ). In some embodiments, the inner contour of the through channel 21 is greater than or equal to the outer contour of the optical path formed by the emission spectrum line 301 of the wafer 3 passing through the through hole 12, that is, the inner contour of the through channel 21 is greater than or equal to the outer contour of the irregular geometric body R. Therefore, there is no loss when the emission spectrum line 301 of the wafer 3 reaches the detection window 4 after passing through the special-shaped valve 20, which can ensure the accuracy and reliability of the detection of the emission spectrum line 301.

[0033] Specifically, the first end and the second end of the through-channel 21 are respectively located on two parallel planes. That is, the first end and the second end of the through-channel 21 are respectively the planes where the upper bottom surface DJEK and the lower bottom surface GMFL of the irregular geometric body R are located. The length of the through-channel 21 is not limited. The first end of the through-channel 21 is fixedly connected to the first side wall 11 of the reaction chamber 10, and the second end of the through-channel 21 is detachably connected to the first side of the detection window 4 to facilitate the replacement of the detection window 4.

[0034] refer to Figure 4 and Figure 5 , the second bottom surface GMFL of the irregular geometric body R, that is, the projection of the spectrum line optical path channel on the second end of the through channel 21, is not circular, but is close to an elliptical shape. Therefore, in some embodiments, the size of the detection window 4 is set to be greater than or equal to the outer contour of the optical path channel projected to the plane where the detection window 4 is located. Further, in some embodiments, the detection window 4 is circular, which is most convenient in manufacturing and use.

[0035] In some embodiments, the condenser lens 5 is fixedly connected to the second side of the detection window 4 opposite to the through channel 21. The size of the condenser lens 5 is adapted to the size of the detection window 4. For example, when the detection window 4 is circular, the condenser lens 5 can also be circular. The size of the condenser lens 5 only needs to ensure that all the wafer emission spectrum lines 301 passing through the through channel 21 and the detection window 4 are incident on the condenser lens 5.

[0036] refer to Figure 7 In some embodiments, the special-shaped valve 20 includes a valve body 22, a valve plate 23 and a driving mechanism 24. The valve plate 23 is movably disposed on the valve body 22 and is located inside the through-channel 21 for opening and closing the through-channel 21. In some embodiments, the initial position of the valve plate 23 is set between the first end and the second end (see also Figure 5 , that is, 1 / 2h of the irregular geometric body R), when it is necessary to block the through channel 21, the valve plate 23 moves downward and intersects the cavity wall of the through channel 21 completely vertically, closing the special-shaped valve 20 to achieve spatial isolation between the detection window 4 and the reaction chamber 10. When it is necessary to open the through channel 21, the valve plate 23 moves upward to return to the initial position, completely leaving the irregular geometric body R formed by the optical path, so that the wafer emission spectrum 301 is all shot into the focusing lens 5 without obstruction. The driving mechanism 24 is connected to the valve plate 23, and the control unit is electrically connected to the driving mechanism 24, which is used to control the driving mechanism 24 and then control the movement of the valve plate 23. The valve body 22 plays a supporting role as the frame of the special-shaped valve 20. The plane where the valve plate 23 is located is located between the first end and the second end of the through channel 21, which can achieve spatial isolation between the detection window 4 and the reaction chamber 10. It should be noted that the driving mechanism 24 may be a pneumatic actuator, which may include a pneumatic actuator, a solenoid valve, a limit switch, and components such as an air pipe and a remote air compressor, which are prior arts and will not be described in detail here.

[0037] Specifically, when the through channel 21 is used for detection, the valve plate 23 is located above the through channel 21. When the detection window is replaced, the valve plate 23 is driven by the driving mechanism 24 to block the through channel 21, so that after the detection window 4 is removed, the reaction chamber 10 is still in a closed state, which is beneficial to the stability of the equipment and the utilization rate of the machine. In addition, when the endpoint detection is not performed, the through channel 21 can be blocked to reduce the corrosion of the plasma on the detection window 4, so as to protect the detection window 4 and extend its service life.

[0038] In some embodiments, the first end of the through channel 21 is fixedly connected to the first side wall 11 of the reaction chamber 10 via a first flange 91 , and the second end of the through channel 21 is detachably connected to the first side of the detection window 4 via a second flange 92 .

[0039] Also refer to Figure 6 , Figure 7 and Figure 3 In some embodiments, the first flange 91 is fastened to the first side wall 11 of the reaction chamber 10 by means of screws, and blind screw holes 13 corresponding to the screws connecting the first flange 91 are arranged around the through hole 12 of the first side wall 11. A recess 921 is arranged on the connection surface between the second flange 92 and the first side of the detection window 4, and the recess 921 is used to embed the first side of the detection window 4.

[0040] In some embodiments, a perfluoro rubber sealing ring (not shown) is provided at the fixed connection between the first flange 91 and the through hole 12 of the side wall of the reaction chamber 10 and at the connection between the recess 921 of the second flange 92 and the detection window 4. Perfluoro rubber has excellent flame retardancy, air tightness, high temperature resistance, oil resistance, solvent resistance, flame resistance, chemical resistance and weather resistance, and can ensure sealing.

[0041] In some embodiments, a perfluororubber sealing ring is provided at the edge of the valve plate 23 that contacts the wall of the through-channel 21 to ensure sealing performance when the valve plate 23 closes the through-channel 21 .

[0042] In some embodiments, the surface of the valve body 22 located in the through channel 21, the surface of the valve plate 23, and the surface of the first flange 91 and the surface of the second flange 92 are all provided with an anti-corrosion layer (not shown) to further prevent plasma corrosion. In some embodiments, the anti-corrosion layer is an anodic oxide layer or yttrium oxide.

[0043] It should be noted that Figure 3 The position of the first side wall 11 shown is only an example, and it may be other side walls of the reaction chamber 10 , for example, a side wall opposite to the first side wall 11 .

[0044] In some embodiments, reference Figure 3As shown, an etching endpoint detection device of the present application also includes an optical fiber 6, a spectrometer 7 and a data processing control unit 8, one end of the optical fiber 6 is connected to the focusing lens 5, and the other end of the optical fiber 6 is connected to the spectrometer 7, and the data processing control unit 8 is electrically connected to the spectrometer 7 for acquiring and processing spectral data. The data processing control unit 8 determines the reaction stage according to the received spectral changes, thereby determining whether the etching endpoint is reached. If the etching endpoint is reached, the etching process is terminated.

[0045] The beneficial effects that may be brought about by the embodiments of the present application include but are not limited to: An etching endpoint detection device of the present application is provided by setting a special-shaped valve between the through hole in the side wall of the reaction chamber and the detection window. The special-shaped valve includes a through-channel that can be opened and closed. The through-channel that can be opened and closed realizes the controllable spatial isolation between the detection window and the reaction chamber. The special-shaped valve can be closed in the endpoint detection reaction gap to replace the detection window, avoiding the need to open the cavity for replacement, and the machine can be quickly restored after replacement, thereby improving the stability and utilization rate of the machine. On the one hand, when the transmittance of the detection window decreases due to plasma corrosion, the detection window can be replaced at any time to ensure the accuracy, stability and sensitivity of the endpoint detection at all times; on the other hand, when the endpoint detection is not performed, the special-shaped valve can be closed to protect the detection window from plasma corrosion, thereby extending its service life.

[0046] It should be noted that different embodiments may produce different beneficial effects. In different embodiments, the beneficial effects that may be produced may be any one or a combination of the above, or any other beneficial effects that may be obtained.

[0047] The basic concepts have been described above. Obviously, for those skilled in the art, the above detailed disclosure is only for example and does not constitute a limitation of this specification. Although not explicitly stated here, those skilled in the art may make various modifications, improvements and corrections to this application. Such modifications, improvements and corrections are suggested in this specification, so such modifications, improvements and corrections still belong to the spirit and scope of the exemplary embodiments of this application.

[0048] It should be noted that in the description of this application, unless otherwise clearly specified and limited, the terms "install", "connect", "connect", and "fix" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a rotating connection or a sliding connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood in combination with specific circumstances.

[0049] In addition, when terms such as "first", "second", and "third" are used in the specification of this application to describe various features, these terms are only used to distinguish these features and cannot be understood as indicating or implying the relationship between the features, the relative importance, or implicitly indicating the number of features indicated.

[0050] In addition, the present specification describes exemplary embodiments by reference to idealized exemplary cross-sectional views and / or plan views and / or stereograms. Therefore, differences from the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are foreseeable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but should include deviations in shapes caused by, for example, manufacturing. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to illustrate the actual shapes of the regions of the device nor to limit the scope of the exemplary embodiments.

[0051] At the same time, the present application uses specific words to describe the embodiments of this specification. For example, "one embodiment", "an embodiment", and / or "some embodiments" refer to a certain feature, structure or characteristic related to at least one embodiment of the present application. Therefore, it should be emphasized and noted that "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more in different positions in the present application does not necessarily refer to the same embodiment. In addition, some features, structures or characteristics in one or more embodiments of the present application can be appropriately combined.

[0052] Similarly, it should be noted that in order to simplify the description of the disclosure of this application and thus help understand one or more embodiments of the invention, in the above description of the embodiments of this application, multiple features are sometimes combined into one embodiment, figure or description thereof. However, this disclosure method does not mean that the features required by the object of this application are more than the features mentioned in the claims. In fact, the features of the embodiments are less than all the features of the single embodiment disclosed above.

[0053] Finally, it should be understood that the embodiments described in this application are only used to illustrate the principles of the embodiments of the present application. Other variations may also fall within the scope of the present application. Therefore, as an example and not a limitation, the alternative configurations of the embodiments of the present application may be considered to be consistent with the teachings of the present application. Accordingly, the embodiments of the present application are not limited to the embodiments explicitly introduced and described in the present application.

Claims

1. An etching endpoint detection device, arranged outside a first side wall of a reaction chamber, wherein the first side wall is provided with a through hole, characterized in that: The endpoint detection device includes: a special-shaped valve, a detection window and a focusing lens arranged outward in sequence along the first side wall, the special-shaped valve includes an openable and closable through-channel, the special-shaped valve and the detection window are configured so that: the emission spectrum lines of the wafer in the reaction chamber pass through the through hole, the through-channel and the detection window in sequence and then all enter the focusing lens; and a control unit, the control unit is electrically connected to the special-shaped valve and is used to control the special-shaped valve to open or close, so as to open and close the through-channel.

2. The etching endpoint detection device according to claim 1, characterized in that: The first end and the second end of the through channel are respectively located on two parallel planes, the first end of the through channel is fixedly connected to the first side wall of the reaction chamber, and the second end of the through channel is detachably connected to the first side of the detection window.

3. The etching endpoint detection device according to claim 1, characterized in that: The inner contour of the through channel is greater than or equal to the outer contour of the optical path channel formed after the wafer emission spectrum line passes through the through hole.

4. The etching endpoint detection device according to claim 3, characterized in that: The size of the detection window is greater than or equal to the outer contour of the optical path channel projected onto the plane where the detection window is located.

5. The etching endpoint detection device according to claim 3, characterized in that: The condenser lens is fixedly connected to the second side of the detection window relative to the through channel, and the size of the condenser lens is adapted to the size of the detection window.

6. The etching endpoint detection device according to claim 2, characterized in that: The special-shaped valve includes a valve body, a valve plate and a driving mechanism. The valve plate is movably arranged on the valve body for opening and closing the through channel. The driving mechanism is connected to the valve plate. The control unit is electrically connected to the driving mechanism for controlling the movement of the valve plate.

7. The etching endpoint detection device according to claim 6, characterized in that: The first end of the through-channel is fixedly connected to the first side wall of the reaction chamber via a first flange, and the second end of the through-channel is detachably connected to the first side of the detection window via a second flange. A recess is provided on the connecting surface between the second flange and the first side of the detection window, and the recess is embedded in the first side of the detection window.

8. The etching endpoint detection device according to claim 7, characterized in that: A perfluororubber sealing ring is provided at a fixed connection between the first flange and the through hole and at a connection between the second flange recess and the detection window.

9. The etching endpoint detection device according to claim 7, characterized in that: The surface of the through passage inside the valve body, the surface of the valve plate, and the surface of the first flange and the surface of the second flange are all provided with an anti-corrosion layer.

10. The etching endpoint detection device according to claim 1, characterized in that: It also includes an optical fiber, a spectrometer and a data processing control unit. One end of the optical fiber is connected to the focusing lens, and the other end of the optical fiber is connected to the spectrometer. The data processing control unit is electrically connected to the spectrometer for acquiring and processing spectral data.

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