Peak annealing device
By using a rotary reflector plate in the peak annealing device to control the reflection and heat absorption of light, the problem of low rapid temperature increase and cooling efficiency of wafers in semiconductor manufacturing is solved, and an efficient heating and cooling process is achieved, which improves the impurity activation and diffusion effect.
Patent Information
- Application Number
- CN202420650121.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-03-29
- Publication Date
- 2024-12-13
- Estimated Expiration
- 2034-03-29
AI Technical Summary
During semiconductor manufacturing, peak annealing requires rapid heating and cooling, but existing equipment is difficult to effectively achieve efficient heating and rapid cooling of wafers, affecting the activation and diffusion effects of impurities.
A peak annealing device is designed, including a rotating reflector plate on both sides of the heating light source. By controlling the opening and closing state of the reflector plate, the light is reflected to the wafer surface during heating to improve the heating efficiency, and when cooling is turned on, the reflector plate is opened to make the heat absorbing plate Quickly absorb heat to achieve rapid cooling.
The heating and cooling efficiency of the wafer is improved, and the high requirements of peak annealing for heating and cooling rate are met, thus maximizing the degree of impurity activation and minimizing the degree of diffusion.
Smart Images
Figure CN222168343U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a spike annealing device. Background Art
[0002] During the semiconductor manufacturing process, wafers usually need to be annealed to repair lattice defects, promote the distribution of impurities, and enhance material stability.
[0003] Among them, the main function of spike annealing is to activate the doping elements, and it has very high requirements for the heating and cooling rates. Specifically, the wafer needs to be quickly heated up at a certain stable standby temperature point, and then immediately cooled down after reaching the target temperature point, so that the wafer is maintained at the target temperature point for only a very short time, thereby maximizing the degree of impurity activation and minimizing the degree of impurity diffusion.
[0004] Therefore, a wafer annealing device is needed that can achieve rapid heating and cooling of the wafer. Utility Model Content
[0005] The purpose of the present application is to provide a spike annealing device that can achieve rapid heating and cooling of a wafer to achieve spike annealing of the wafer.
[0006] An embodiment of the present application provides a spike annealing device, comprising: a process chamber; a support table located in the process chamber and used to place a wafer; a plurality of heating light sources used to heat the wafer; and a heat absorption plate, arranged on a side of the plurality of heating light sources away from the support table; wherein a pair of reflection plates are arranged on both sides of any one of the heating light sources, and the pair of reflection plates can rotate to be in a closed state in a direction in which the heating light source is away from the support table and reflect at least a portion of the light from the heating light source.
[0007] In some embodiments, any one of the pair of reflective plates includes a plate body and a rotating shaft for driving the plate body to rotate, and the first end of the rotating shaft is connected to a driving assembly disposed outside the process chamber through a plurality of through holes penetrating the peripheral wall of the process chamber.
[0008] In some embodiments, the material of the plate body includes metal.
[0009] In some embodiments, the surface of the plate body includes a reflective coating.
[0010] In some embodiments, the material of the reflective coating includes gold.
[0011] In some embodiments, the driving assembly includes: a motor, a transmission belt and multiple driving wheels; the transmission belt drives the multiple driving wheels to rotate under the drive of the motor; and the multiple driving wheels are respectively connected to the first end of the rotating shaft to drive the rotating shaft to rotate.
[0012] In some embodiments, the transmission belt is mounted on any two adjacent driving wheels in a reverse transmission manner, so that the two rotating shafts in the pair of reflective plates can rotate in opposite directions respectively.
[0013] In some embodiments, the heating light source is a tungsten filament lamp.
[0014] In some embodiments, the ratio of the width of the plate to the diameter of any one of the plurality of heating light sources is (1.8-2.5):1.
[0015] In some embodiments, the ratio of the distance between the axis of the rotating shaft and the axis of the corresponding heating light source among the multiple heating light sources to the diameter of the corresponding heating light source is (2-2.5):1.
[0016] The beneficial effects of the spike annealing device provided in the embodiments of the present application include but are not limited to the following:
[0017] The present application provides a spike annealing device having a pair of reflective plates disposed on both sides of any one of the heating light sources, wherein the pair of reflective plates can rotate to be in a closed state in a direction away from the supporting platform of the heating light source and reflect at least a portion of the light of the heating light source.
[0018] The spike annealing device controls the opening or closing state of a pair of reflective plates on both sides of the heating light source. When the wafer is heated, the pair of reflective plates are in a closed state. On the one hand, the light emitted by the heating light source can be reflected to the surface of the wafer to improve the heating efficiency of the wafer. On the other hand, the heat absorbing plate and the heating light source can be isolated to prevent the heat absorbing plate from absorbing too much heat during the heating process of the wafer, thereby reducing the heating efficiency of the wafer. When the wafer is cooled, the pair of reflective plates are in an open state, and the heat absorbing plate can quickly absorb the heat in the process chamber to achieve rapid cooling of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] The following figures describe in detail the exemplary embodiments disclosed in this application. The same reference numerals represent similar structures in several views of the drawings. Those skilled in the art will understand that these embodiments are non-limiting, exemplary embodiments, and the drawings are only for the purpose of illustration and description, and are not intended to limit the scope of this application. Other embodiments may also accomplish the inventive intent in this application. It should be understood that the drawings are not drawn to scale.
[0020] in:
[0021] Figure 1 It is a structural schematic diagram of an annealing device;
[0022] Figure 2 is a schematic structural diagram of a spike annealing device in which a reflector plate is in a semi-closed state according to some embodiments of the present application;
[0023] Figure 3 is a schematic structural diagram of a spike annealing device in which a reflector plate is in a fully closed state according to some embodiments of the present application;
[0024] Figure 4 is a schematic structural diagram of a spike annealing device with a reflector in an open state according to some embodiments of the present application;
[0025] Figure 5 is a schematic structural diagram of a reflective plate according to some embodiments of the present application;
[0026] Figure 6 A schematic diagram of a first angle structure of the connection between the rotation axis of the reflective plate and the process chamber according to some embodiments of the present application;
[0027] Figure 7 A schematic diagram of a second angle structure of the connection between the rotation axis of the reflective plate and the process chamber according to some embodiments of the present application; and
[0028] Figure 8 It is a schematic diagram of the structure of a driving component according to some embodiments of the present application. DETAILED DESCRIPTION
[0029] The following description provides specific application scenarios and requirements of the present application, with the purpose of enabling those skilled in the art to make and use the content in the present application. It will be apparent to those skilled in the art that various local modifications to the disclosed embodiments are apparent, and the general principles defined herein may be applied to other embodiments and applications without departing from the spirit and scope of the present application. Therefore, the present application is not limited to the embodiments shown, but to the widest scope consistent with the claims.
[0030] Figure 1The invention relates to an annealing device, comprising: a process chamber 10, a support table 20 for supporting a wafer disposed inside the process chamber 10, a plurality of heating light sources 30 for heating the wafer located on both sides of the support table 20, and a heat absorbing plate 40 located on a side of the plurality of heating light sources 30 away from the support table 30. When heating the wafer, the light emitted by most of the plurality of heating light sources 30 will scatter around and cannot be fully irradiated to the surface of the wafer, thereby reducing the heating efficiency of the wafer. The heat absorbing plate 40 is a flat plate, which cools the heated wafer by absorbing heat. In addition, the heat absorbing plate 40 will reflect a part of the light to the surface of the wafer during the heating process of the wafer to heat the wafer. However, since the heat absorbing plate 40 absorbs the heat generated by the light during the heating process of the wafer, the heating efficiency of the wafer is reduced on the one hand, and the cooling efficiency of the heat absorbing plate 40 in the subsequent cooling process of the wafer is also reduced on the other hand.
[0031] However, spike annealing has very high requirements for the heating and cooling rates. Specifically, the wafer needs to be quickly heated up to a certain stable standby temperature point and immediately cooled down after reaching the target temperature point, so that the wafer only maintains the target temperature point for a very short time.
[0032] Therefore, a wafer annealing device is needed that can achieve rapid heating and cooling of the wafer.
[0033] The present application provides a spike annealing device, comprising: a process chamber; a support table located in the process chamber and used for placing a wafer; a plurality of heating light sources located on both sides of the support table and used for heating the wafer; and a heat absorption plate arranged on one side of the plurality of heating light sources away from the support table; wherein a pair of reflection plates are arranged on both sides of any one of the heating light sources, and the pair of reflection plates can rotate so as to be in a closed state in a direction of the heating light source away from the support table and reflect at least a portion of the light of the heating light source.
[0034] The present application provides a spike annealing device that controls the opening or closing state of a pair of reflective plates on both sides of the heating light source. When the wafer is heated, the pair of reflective plates are in a closed state. On the one hand, the light emitted by the heating light source can be reflected to the surface of the wafer to improve the heating efficiency of the wafer. On the other hand, the heat absorbing plate and the heating light source can be isolated to prevent the heat absorbing plate from absorbing too much heat during the heating process of the wafer, thereby reducing the heating efficiency of the wafer. When the wafer is cooled, the pair of reflective plates are in an open state, and the heat absorbing plate can quickly absorb the heat in the process chamber to achieve rapid cooling of the wafer.
[0035] The spike annealing device provided in the present application will be described in detail below in conjunction with the embodiments and drawings.
[0036] refer to Figures 2 to 4 The embodiment of the present application provides a spike annealing device, characterized in that it includes: a process chamber 100, a support table 200 for placing a wafer, a plurality of heating light sources 300 for heating the wafer, a heat absorbing plate 400, and a pair of reflecting plates 500 arranged on both sides of any one of the heating light sources 300.
[0037] In some embodiments, the material of the inner wall of the process chamber 100 includes ceramic, so that the process chamber 100 can withstand the temperature and heat when the wafer is subjected to spike annealing.
[0038] In some embodiments, the process chamber 100 can be opened or closed to take or place the wafer.
[0039] In some embodiments, the support platform 200 is made of transparent quartz, so that the light generated by the heating light source 300 can penetrate the support platform 200 to heat the side of the wafer close to the support platform 200 .
[0040] In some embodiments, the support platform 200 is ring-shaped so that both sides of the wafer are exposed to the heating light source 300 .
[0041] In some embodiments, the plurality of heating light sources 300 are evenly disposed on both sides of the supporting platform 200 to heat both sides of the wafer respectively.
[0042] In some embodiments, the plurality of heating light sources 300 include a low-power heating state and a high-power heating state to match different heating rates of the wafer during the heating process of the wafer.
[0043] In some embodiments, the plurality of heating light sources 300 are tungsten filament lamps. The tungsten filament lamps are formed by extending tungsten filaments into a gas-filled quartz tube. The tungsten filaments generate heat under the action of an alternating voltage and heat the gas in the quartz tube, thereby generating infrared radiation, which is irradiated to the surface of the wafer, thereby heating the wafer.
[0044] In some embodiments, when the wafer needs to be heated and heated, the multiple heating light sources 300 are powered on; when the wafer needs to reach a peak temperature and needs to be cooled, the multiple heating light sources 300 are powered off 1 to 2 seconds before the temperature of the wafer reaches the peak temperature, and the heating of the wafer is stopped. This is because even if the multiple heating light sources 300 are powered off, the infrared radiation generated by the multiple heating light sources 300 before the power off can still reach the surface of the wafer to heat the wafer, and there is a relaxation phenomenon. Therefore, the heating light sources 300 need to be powered off before the wafer reaches the peak temperature to avoid the relaxation phenomenon from increasing the actual peak temperature of the wafer, while improving the cooling efficiency of the subsequent cooling process.
[0045] In some embodiments, the heat absorption plate 400 is respectively located on one side of the plurality of heating light sources 300 facing the support platform 200 , and the heat absorption plate 400 is used to quickly absorb the heat in the process chamber 100 during the cooling process of the wafer, thereby reducing the temperature of the wafer.
[0046] In some embodiments, the material of the heat absorbing plate 400 includes aluminum alloy, which has the characteristics of high thermal conductivity and good stability, and can absorb heat quickly.
[0047] In some embodiments, the heat absorbing plate 400 is a flat plate, and the thickness of the heat absorbing plate 400 is 25 mm to 35 mm; and the area of the surface of the heat absorbing plate 400 facing the multiple heating light sources 300 is larger than the projection area of the multiple heating light sources 300 projected onto the heat absorbing plate 400, so that the heat absorbing plate 400 can absorb a large area from the multiple heating light sources 300.
[0048] In some embodiments, the pair of reflective plates 500 includes a first reflective plate and a second reflective plate, and the second reflective plate of the pair of reflective plates 500 and the first reflective plate of the other pair of reflective plates 500 are respectively disposed between adjacent heating light pipes 300 .
[0049] In some embodiments, the pair of reflective plates 500 are rotatable and are in a closed state in a direction of the heating light source 300 away from the supporting platform 200 . The closed state may be a semi-closed state or a fully closed state. Figure 2 is a structural schematic diagram of the reflector 500 in a semi-closed state; Figure 2 is a schematic structural diagram of the reflector 500 in a fully closed state; and Figure 4 It is a schematic structural diagram of the reflector 500 in an open state.
[0050] In some embodiments, reference Figure 2 and 3When the wafer is heated, the pair of reflection plates 500 is in a semi-closed or fully closed state to reflect the light generated by the multiple heating light sources 300 to the surface of the wafer, thereby improving the heating efficiency of the wafer and achieving rapid heating of the wafer. At the same time, the pair of reflection plates 500 also reduces the area of the heat absorption plate 400 exposed to the multiple heating light sources 300, thereby preventing the heat absorption plate 400 from absorbing too much heat during the heating process of the wafer, thereby reducing the heating efficiency of the wafer.
[0051] In some embodiments, reference Figure 4 When the wafer needs to be cooled, the pair of reflecting plates 500 is in an open state, that is, the pair of reflecting plates 500 is perpendicular to the heat absorbing plate 400, so that the side of the multiple heating light sources 300 facing the heat absorbing plate 400 is completely exposed to the heat absorbing plate 400, so that the heat absorbing plate 400 quickly absorbs the heat in the process chamber 100, thereby achieving rapid cooling of the wafer.
[0052] In some embodiments, reference Figure 5 Any one of the pair of reflective plates 500 includes a plate body 501 and a rotation shaft 502 for driving the plate body 501 to rotate. In some embodiments, the rotation shaft 502 is fixedly connected to both ends of the plate body 501.
[0053] In some embodiments, the length of the plate 501 is greater than the length of the heating light source, and the length direction of the plate 501 refers to the direction in which the plate 501 is parallel to the axial direction of the heating light source.
[0054] In some embodiments, the ratio of the width of the plate 501 to the diameter of any one of the plurality of heating light sources 300 is (1.8-2.5):1. The width of the plate 501 refers to the length of the plate 501 perpendicular to the heat absorbing plate 400 and perpendicular to the direction of the rotation axis 502 when the reflective plate 500 is in an open state. The width of the plate 501 will affect the closed state of the reflective plate 500 when heating the wafer. In an ideal state, the plate 501 of the pair of reflective plates 500 collide with each other on the side of the heating light source 300 away from the support platform 200, completely preventing the heating light source 300 from being exposed to the heat absorbing plate 400.
[0055] In some embodiments, the ratio of the distance between the axis of the rotating shaft 502 and the axis of the corresponding heating light source 300 among the multiple heating light sources 300 to the diameter of the corresponding heating light source 300 is (2-2.5): 1. The purpose of adjusting the distance between the axis of the rotating shaft 502 and the axis of the corresponding heating light source 300 among the multiple heating light sources 300 is also to achieve the closure of the reflection plate 500 when heating the wafer, thereby improving the heating efficiency of the wafer.
[0056] In some embodiments, the material of the plate 501 includes metal. In some embodiments, the surface of the plate 501 includes a reflective coating to reflect the light generated by the plurality of heating light sources 300 to the surface of the wafer. In some embodiments, the material of the reflective coating includes gold, because gold has a high reflectivity to light, which can reduce the heat loss caused by the plate 501 absorbing the light generated by the plurality of heating light sources 300.
[0057] In some embodiments, the reflective coating has a thickness of 0.3-0.5 mm.
[0058] In some embodiments, reference Figure 6 and 7 The first end 502a of the rotating shaft 502 is connected to the driving assembly 600 arranged outside the process chamber 100 through a plurality of through holes penetrating the peripheral wall of the process chamber 100, and the second end 502b of the rotating shaft 502 is inserted into a plurality of blind holes or grooves arranged inside the peripheral wall of the process chamber 100.
[0059] In some embodiments, reference Figure 8 The driving assembly 600 includes: a motor 601, a transmission belt 602 and a plurality of driving wheels 603; the transmission belt 602 drives the plurality of driving wheels 603 to rotate under the drive of the motor 601; and the plurality of driving wheels 603 are respectively connected to the first end 502a of the rotating shaft 502 to drive the rotating shaft 502 to rotate.
[0060] In some embodiments, the transmission belt 602 is mounted on any two adjacent driving wheels 603 in a reverse transmission manner, so that the two rotating shafts 502 in the pair of reflective plates 500 can rotate in different rotation directions. Specifically, when the wafer needs to be heated, the rotating shafts 502 of the pair of reflective plates 500 rotate toward the direction close to the heating light source 300, and the plate body 501 rotates under the drive of the rotating shafts 502, and is in a semi-closed or fully closed state; when the wafer needs to be cooled, the rotating shafts 502 of the pair of reflective plates 500 rotate toward the direction away from the heating light source 300, and the plate body 501 rotates under the drive of the rotating shafts 502, and is in an open state.
[0061] In some embodiments, the spike annealing device also includes a controller (not shown in the figure), which is electrically connected to the motor 601, and controls the movement direction of the conveyor belt by controlling the motor 601, thereby controlling the rotation direction of the driving wheel 603, thereby controlling the rotation direction of the rotating shaft 502 to control the opening or closing of the reflective plate 500.
[0062] In some embodiments, the spike annealing process for the wafer is as follows:
[0063] In a first time period, for example, 0 to 34 seconds, the wafer is placed in the process chamber 100, the wafer is positioned, and the atmosphere in the process chamber 100 is adjusted;
[0064] In the second time period, for example, 34s to 69s, the wafer is heated from room temperature to a first preset temperature, for example, 550° C. During this period, the plurality of heating lamp sources are in a low heating power state, and the reflective plate 500 is in a closed state;
[0065] In a third time period, for example, 69s to 72s, the wafer is subjected to a peak temperature increase, and the wafer is heated from the first preset temperature to a second preset temperature, for example, 869.5° C. During this period, the multiple heating lamp sources are in a high heating power state, and the reflective plate 500 is in a closed state;
[0066] In a fourth time period, for example, 72s to 85s, the wafer is rapidly cooled down, during which the plurality of heating lamp sources are in an off state, and the reflective plate 500 is in an on state.
[0067] In the whole process, the peak annealing time T-50 of the wafer is about 2 to 3 seconds. It should be noted that in the whole process, the single opening or closing time of the reflector 500 is about 1 second. Based on the time of the above process, a command can be issued to close the reflector 500 when the process recipe is executed to 32 seconds to complete the heating process. When the process is executed to 71 seconds, an opening command is issued to open the reflector 500. The opening action can be completed at 72 seconds. At this time, the wafer enters the cooling stage and will not affect the cooling process.
[0068] The beneficial effects of the spike annealing device provided in the embodiments of the present application include but are not limited to the following:
[0069] The present application provides a spike annealing device having a pair of reflective plates disposed on both sides of any one of the heating light sources. The pair of reflective plates are rotatable, are in a closed state in a direction away from the supporting platform of the heating light source, and partially reflect the light of the heating light source.
[0070] The spike annealing device controls the opening or closing state of a pair of reflective plates on both sides of the heating light source. When the wafer is heated, the pair of reflective plates are in a closed state. On the one hand, the light emitted by the heating light source can be reflected to the surface of the wafer to improve the heating efficiency of the wafer. On the other hand, the heat absorbing plate and the heating light source can be isolated to prevent the heat absorbing plate from absorbing too much heat during the heating process of the wafer, thereby reducing the heating efficiency of the wafer. When the wafer is cooled, the pair of reflective plates are in an open state, and the heat absorbing plate can quickly absorb the heat in the process chamber to achieve rapid cooling of the wafer.
[0071] It should be noted that different embodiments may produce different beneficial effects. In different embodiments, the beneficial effects that may be produced may be any one or a combination of the above, or any other beneficial effects that may be obtained.
[0072] The basic concepts have been described above. Obviously, for those skilled in the art, the above detailed disclosure is only for example and does not constitute a limitation of this specification. Although not explicitly stated here, those skilled in the art may make various modifications, improvements and corrections to this application. Such modifications, improvements and corrections are suggested in this specification, so such modifications, improvements and corrections still belong to the spirit and scope of the exemplary embodiments of this application.
[0073] It should be noted that in the description of this application, unless otherwise clearly specified and limited, the terms "install", "connect", "connect", and "fix" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a rotating connection or a sliding connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood in combination with specific circumstances.
[0074] In addition, when terms such as "first", "second", and "third" are used in the specification of this application to describe various features, these terms are only used to distinguish these features and cannot be understood as indicating or implying the relationship between the features, the relative importance, or implicitly indicating the number of features indicated.
[0075] In addition, the present specification describes exemplary embodiments by reference to idealized exemplary cross-sectional views and / or plan views and / or stereograms. Therefore, differences from the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are foreseeable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but should include deviations in shapes caused by, for example, manufacturing. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to illustrate the actual shapes of the regions of the device nor to limit the scope of the exemplary embodiments.
[0076] At the same time, the present application uses specific words to describe the embodiments of this specification. For example, "one embodiment", "an embodiment", and / or "some embodiments" refer to a certain feature, structure or characteristic related to at least one embodiment of the present application. Therefore, it should be emphasized and noted that "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more in different positions in the present application does not necessarily refer to the same embodiment. In addition, some features, structures or characteristics in one or more embodiments of the present application can be appropriately combined.
[0077] Similarly, it should be noted that in order to simplify the description of the disclosure of this application and thus help understand one or more embodiments of the invention, in the above description of the embodiments of this application, multiple features are sometimes combined into one embodiment, figure or description thereof. However, this disclosure method does not mean that the features required by the object of this application are more than the features mentioned in the claims. In fact, the features of the embodiments are less than all the features of the single embodiment disclosed above.
[0078] Finally, it should be understood that the embodiments described in this application are only used to illustrate the principles of the embodiments of the present application. Other variations may also fall within the scope of the present application. Therefore, as an example and not a limitation, the alternative configurations of the embodiments of the present application may be considered to be consistent with the teachings of the present application. Accordingly, the embodiments of the present application are not limited to the embodiments explicitly introduced and described in the present application.
Claims
1. A spike annealing device, characterized in that: include: Process chamber; A supporting platform, located in the process chamber, for placing a wafer; A plurality of heating light sources are arranged on both sides of the supporting platform for heating the wafer; and A heat absorbing plate, arranged on a side of the plurality of heating light sources away from the supporting platform; Wherein, a pair of reflection plates are arranged on both sides of any one of the heating light sources, and the pair of reflection plates can rotate to be in a closed state in the direction where the heating light source is away from the supporting platform and reflect at least a part of the light of the heating light source.
2. The spike annealing device according to claim 1, characterized in that: Any one of the pair of reflection plates includes a plate body and a rotating shaft for driving the plate body to rotate, and a first end of the rotating shaft is connected to a driving component arranged outside the process chamber through a plurality of through holes penetrating the peripheral wall of the process chamber.
3. The spike annealing device according to claim 2, characterized in that: The material of the plate body includes metal.
4. The spike annealing device according to claim 2, characterized in that: The surface of the plate body includes a reflective coating.
5. The spike annealing device according to claim 4, characterized in that: The material of the reflective coating includes gold.
6. The spike annealing device according to claim 2, characterized in that: The driving assembly includes: a motor, a transmission belt and a plurality of driving wheels; the transmission belt drives the plurality of driving wheels to rotate under the drive of the motor; and the plurality of driving wheels are respectively connected to the first end of the rotating shaft to drive the rotating shaft to rotate.
7. The spike annealing device according to claim 6, characterized in that: The transmission belt is sleeved on any two adjacent driving wheels in a reverse transmission manner, so that the two rotating shafts in the pair of reflection plates can rotate in opposite directions respectively.
8. The spike annealing device according to claim 2, characterized in that: The heating light source is a tungsten filament lamp.
9. The spike annealing device according to claim 8, characterized in that: The ratio of the width of the plate to the diameter of any one of the plurality of heating light sources is (1.8-2.5):
1.
10. The spike annealing device according to claim 8, characterized in that: The ratio of the distance between the axis of the rotating shaft and the axis of the corresponding heating light source among the multiple heating light sources to the diameter of the corresponding heating light source is (2-2.5):1.