Butterfly laser chip aluminum nitride improved structure
By extending the gold-plated tin zone and setting up the L-shaped gold-plated layer, the problems of poor versatility and poor performance of existing butterfly laser chips are solved, and the versatility and performance of long and short chips are improved to meet the usage requirements.
Patent Information
- Application Number
- CN202420938037.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-04-30
- Publication Date
- 2024-12-31
- Estimated Expiration
- 2034-04-30
AI Technical Summary
The gold-plated tin area of the existing butterfly laser chip aluminum nitride is short, which makes the long chip unusable, and the versatility is poor. The distance between the top gold-plated layer and the gold-plated tin area is too far, resulting in insufficient light collection, small backlight, poor product performance, and yield rate Low, cannot meet the usage requirements.
A modified structure is designed in which the length of the gold-plated tin zone extends to 2.5mm, and an L-shaped gold-plated layer is provided on the top to make the backlight chip closer to the light-out chip, and the length and width of the gold-plated tin zone are increased to accommodate the use of long and short chips, and to improve the Universality and performance.
It has achieved the ability to use both long and short chips, with strong versatility and low usage cost, wider gold-plated layer, making the distance between the two chips closer, and the light collection and backlight enhancement, significantly improving product performance, improving yield, meeting the requirements of use.
Smart Images
Figure CN222282499U_ABST
Abstract
Description
Technical Field
[0001] The utility model belongs to the field of communication, and particularly relates to an improved aluminum nitride structure of a butterfly laser chip with strong versatility, low use cost, simple and convenient use, better product performance and high yield rate. Background Art
[0002] Butterfly laser chip aluminum nitride (such as Figure 2 As shown in the figure, there are several gold-plated areas, gold-plated tin areas and a gold-plated layer for placing backlight chips. The length of the gold-plated tin area is 1.25mm. The gold-plated tin area is short and cannot be used for some long chips. It has poor versatility and limited use. The top gold-plated layer is far away from the gold-plated tin area, and the distance between the backlight chip and the light-emitting chip is too far. The light received is small and the backlight is small. The product performance is poor and the yield rate is low, which cannot effectively meet the use requirements.
[0003] The technical problem to be solved by the utility model is to provide an improved structure of aluminum nitride for butterfly laser chips, which can be used for both long and short chips, has strong versatility, is easy to use without restrictions, has low cost, has a short distance between two chips, collects more light, has a large backlight, has good product performance, a high yield rate, and effectively meets the requirements of use. Utility Model Content
[0004] In order to solve the problems of the above-mentioned prior art such as short gold-tin plated area, long chips cannot be used, poor versatility, limited use, the top gold-plated layer is far away from the gold-tin plated area, the backlight chip is too far away from the light-emitting chip, the light receiving is small, the backlight is small, the product performance is poor, the yield rate is low, and the use requirements cannot be effectively met, the utility model adopts the following technical solutions:
[0005] The utility model provides an improved structure of aluminum nitride of a butterfly laser chip, comprising a rectangular body, a plurality of gold-plated areas are arranged on the body, a gold-plated tin area for placing a light-emitting chip is arranged at the middle of the lower part of the body, the gold-plated tin area extends from bottom to top and has a length of 2.5 mm, an L-shaped gold-plated layer for placing a backlight chip is arranged on the right side of the top of the body, and the distance from top to bottom of the L-shaped gold-plated layer is 0.55 mm.
[0006] The beneficial effects of the utility model are: the gold-plated tin area is increased to 2.5mm, both long and short chips can be used, it has strong versatility, is easy to use without restriction, has low cost, the wider gold-plated layer makes the distance between the two chips closer, it collects more light and has a large backlight, the product performance is good, the yield rate is high, and it effectively meets the use requirements. BRIEF DESCRIPTION OF THE DRAWINGS
[0007] Figure 1 The utility model is a schematic structural diagram of an embodiment.
[0008] Figure 2 This is a schematic diagram of the structure of a traditional product. DETAILED DESCRIPTION
[0009] The preferred embodiments of the present utility model are described in detail below with reference to the accompanying drawings.
[0010] See also Figure 1 An improved structure of aluminum nitride for a butterfly-shaped laser chip comprises a rectangular body 1, on which a plurality of gold-plated areas 11 are arranged, and a gold-plated tin area 12 for placing a light-emitting chip is arranged at the middle of the lower part of the body 1, and the gold-plated tin area 12 extends from bottom to top and has a length of 2.5 mm. The entire gold-plated tin area is longer, and long chips can still be used, with strong versatility and unrestricted use. An L-shaped gold-plated layer 13 for placing a backlight chip is arranged on the right side of the top of the body, and the distance from the L-shaped gold-plated layer 13 from top to bottom is 0.55 mm, so that the distance between the gold-plated layer and the gold-plated tin area is shorter, the distance between the backlight chip and the light-emitting chip is closer, more light is collected, the backlight is larger, and the product performance is better.
[0011] The beneficial effects of the utility model are: the gold-plated tin area is increased to 2.5mm, both long and short chips can be used, it has strong versatility, is easy to use without restriction, has low cost, the wider gold-plated layer makes the distance between the two chips closer, it collects more light and has a large backlight, the product performance is good, the yield rate is high, and it effectively meets the use requirements.
[0012] The above embodiments and drawings do not limit the product form and style of the present utility model. Any appropriate changes or modifications made by ordinary technicians in the relevant technical field should be deemed to be within the patent scope of the present utility model.
Claims
1. An improved structure of aluminum nitride for butterfly laser chip, characterized by: The invention comprises a rectangular body (1), wherein the body (1) is provided with a plurality of gold-plated areas (11), a gold-plated tin area (12) for placing a light-emitting chip is provided at the middle of the lower part of the body (1), the gold-plated tin area (12) extending from bottom to top and having a length of 2.5 mm, and an L-shaped gold-plated layer (13) for placing a backlight chip is provided on the right side of the top of the body (1), and the distance from top to bottom of the L-shaped gold-plated layer (13) is 0.55 mm.