Semiconductor photomask support assembly with attached abrasion-free protection function
By designing the semiconductor photomask bracket assembly with adjustment and positioning mechanism, the problem of difficulty in fixing and distance adjustment of the photomask in lithography technology is solved, the film quality and etching accuracy are improved, and the practicality of the device is enhanced.
Patent Information
- Application Number
- CN202420172106.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-01-24
- Publication Date
- 2025-01-03
- Estimated Expiration
- 2034-01-24
AI Technical Summary
There is a lack of support frames for fixing the photomask in the existing lithography technology, and it is difficult to adjust the distance between the lens and the mask version when exposed, and the operation is complicated, which affects the film quality and etching accuracy.
Design a semiconductor photomask bracket assembly including a base plate, a support plate, an adjustment mechanism and a positioning mechanism. The adjustment of the lens and the mask version body is achieved through an electric telescopic rod and a threaded column, and the close fit between the positioning plate and the substrate plate reduces the shadow effect. Use a silicone layer and a universal wheel to improve sealing and mobility.
It realizes flexible adjustment of the body distance between the lens and mask version, reduces the shadow effect, improves the film quality and etching accuracy, and enhances the practicality and use effect of the device.
Smart Images
Figure CN222299944U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductor device manufacturing, and more specifically to a semiconductor photomask support component with good adhesion and no wear protection. Background Art
[0002] Photolithography is one of the key technologies in the field of integrated circuit manufacturing. Specifically, through exposure, the mask pattern on the mask can be imaged onto the object to be processed in a certain proportion. A mask pattern is formed on the mask, and the mask pattern is transferred to the photoresist on the surface of the semiconductor substrate through exposure. There is a lens between the mask and the photoresist. It is through the lens imaging that the mask pattern is transferred to the photoresist. The projected circuit is photoetched by an integrated circuit lithography machine. The production and processing steps are: exposure, development, desensitization, and finally application to photoetching.
[0003] Patent application publication number: CN114280897A A mask transfer component and a photolithography system are provided with a plurality of plate slots, each of which is used to store a target mask, and the plate slot has an adsorption portion, the adsorption portion is used to provide adsorption function to the target mask, and each plate slot is designed with a vacuum adsorption function to ensure that the mask can be firmly fixed when moving in the vertical direction to prevent the mask from falling, and through the cooperation of the first plate library and the second plate library that can be lifted and lowered, friendly loading is achieved while improving the transportation efficiency of the mask.
[0004] However, in actual use, this structure lacks a corresponding support frame for fixing the photomask, and it is difficult to adjust the distance between the lens and the mask body when the photomask is exposed, and the processing operation is complicated. Utility Model Content
[0005] In order to overcome the above-mentioned defects of the prior art, the utility model provides a semiconductor photomask support assembly with non-wear protection to solve the problems raised in the above-mentioned background technology.
[0006] In order to achieve the above purpose, the utility model provides the following technical solutions:
[0007] A semiconductor photomask support assembly with non-wear protection, comprising a base plate, two support plates are arranged on the top of the base plate, a positioning mechanism is arranged on one side of the two support plates, and an adjustment mechanism is arranged on the top of the support plates;
[0008] The adjustment mechanism includes a first electric telescopic rod arranged on the top of the support plate, a fixed frame is arranged on the top of the first electric telescopic rod, a mask version body is arranged inside the fixed frame, a mask groove is opened inside the mask version body, a mask pattern is arranged inside the mask groove, a pillar is arranged on one side of the bottom plate, a movable sleeve is arranged on the surface of the pillar, a threaded column is arranged on one side of the movable sleeve, a focusing frame is arranged on one side of the movable sleeve, and a lens is arranged inside the focusing frame.
[0009] By adopting the above technical solution: in order to improve the use effect of the device and facilitate the adjustment of the distance between the focusing frame and the mask body.
[0010] As a further description of the above technical solution: the positioning mechanism includes a second electric telescopic rod arranged on one side of the support plate, a positioning plate is arranged on one side of the second electric telescopic rod, a silicone layer is arranged on one side of the positioning plate, a workbench is arranged on the top of the bottom plate, a substrate plate is arranged on the top of the workbench, and a layer to be etched is arranged on the top of the substrate plate.
[0011] By adopting the above technical solution: the positioning plate is closely attached to the substrate plate, the shadow effect caused by the substrate plate during the preparation process is reduced, and the quality of the film is guaranteed.
[0012] As a further description of the above technical solution: a photoresist layer is arranged on the top of the layer to be etched, a first exposure pattern is arranged on the top of the photoresist layer, second exposure patterns are arranged on both sides of the first exposure pattern, the ratio of the area of the first exposure pattern to the total area of the mask body is less than a preset ratio, and the ratio of the sum of the areas of the second exposure pattern and the first exposure pattern to the total area of the mask body is within a preset range.
[0013] By adopting the above technical solution, anisotropic etching of the layer to be etched can be performed without affecting the etching of the layer to be etched.
[0014] As a further description of the above technical solution: a plurality of placement grooves are provided on the surface of the mask version body, light and shadow strips are movably clamped inside the plurality of placement grooves, a cylinder is provided at the bottom of the base plate, and a universal wheel is provided at the bottom of the cylinder.
[0015] By adopting the above technical solution, the light can be scattered, thereby improving the use effect and facilitating the movement of the device.
[0016] Technical effects and advantages of the utility model:
[0017] 1. By setting the adjustment mechanism, compared with the prior art, glue is applied between the workbench and the bottom plate, and the thread locking glue Loctite is applied to the fastening screws to ensure the sealing of the mask stage bracket, and the lens inside the focusing frame can be adjusted up and down, and the mask pattern inside the mask body can also be adjusted, thereby improving the practicability of the device and enhancing the use effect;
[0018] 2. By setting up a positioning mechanism, compared with the prior art, the second electric telescopic rod is used to drive the positioning plate to move to fix the substrate plate and the layer to be etched, and the positioning plate is tightly attached to the substrate plate, thereby reducing the shadow effect caused by the mask during the preparation process and ensuring the quality of the film. At the same time, the presence of the second exposure pattern increases the pattern density in the mask, thereby improving the etching accuracy of the layer to be etched in the device. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] Figure 1 It is a schematic diagram of the overall structure of the utility model.
[0020] Figure 2 It is a structural schematic diagram of the regulating mechanism of the utility model.
[0021] Figure 3 It is a structural schematic diagram of the workbench of the utility model.
[0022] The accompanying drawings are marked as follows: 1. base plate; 2. support plate; 3. first electric telescopic rod; 4. fixed frame; 5. mask version body; 6. mask pattern; 7. pillar; 8. movable sleeve; 9. threaded column; 10. focusing frame; 11. lens; 12. second electric telescopic rod; 13. positioning plate; 14. workbench; 15. substrate plate; 16. layer to be etched; 17. photoresist layer; 18. first exposure pattern; 19. second exposure pattern; 20. placement groove; 21. cylinder; 22. universal wheel. DETAILED DESCRIPTION
[0023] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.
[0024] The embodiments of this application disclose Figure 1-3 A semiconductor photomask holder assembly with non-wear protection is shown, comprising a base plate 1, two support plates 2 are arranged on the top of the base plate 1, a positioning mechanism is arranged on one side of the two support plates 2, and an adjustment mechanism is arranged on the top of the support plates 2;
[0025] The adjustment mechanism includes a first electric telescopic rod 3 arranged on the top of the support plate 2, a fixed frame 4 is arranged on the top of the first electric telescopic rod 3, a mask version body 5 is arranged inside the fixed frame 4, a mask groove is opened inside the mask version body 5, a mask pattern 6 is arranged inside the mask groove, a pillar 7 is arranged on one side of the bottom plate 1, a movable sleeve 8 is sleeved on the surface of the pillar 7, a threaded column 9 is arranged on one side of the movable sleeve 8, a focusing frame 10 is arranged on one side of the movable sleeve 8, a lens 11 is arranged inside the focusing frame 10, the threaded column 9 is rotated, and then the movable sleeve 8 is moved up and down on the surface of the pillar 7, so as to improve the practical effect of the device, and then the focusing frame 10 is driven to move up and down, so that the lens 11 moves, and after reaching a suitable position, the clamping threaded column 9 is tightened to fix the lens 11, and finally the first electric telescopic rod 3 is started to drive the fixed frame 4 to move up and down, the fixed frame 4 drives the mask version body 5 to move, and the mask version body 5 drives the internal mask pattern to move.
[0026] Reference Figure 2-3 As shown, the positioning mechanism includes a second electric telescopic rod 12 arranged on one side of the support plate 2, a positioning plate 13 is arranged on one side of the second electric telescopic rod 12, a silicone layer is arranged on one side of the positioning plate 13, a workbench 14 is arranged on the top of the bottom plate 1, a substrate plate 15 is arranged on the top of the workbench 14, and a layer to be etched 16 is arranged on the top of the substrate plate 15. Glue is applied between the workbench 14 and the bottom plate 1, and the thread locking glue Loctite is applied to the tightening screws to ensure the sealing of the mask stage bracket, and then the second electric telescopic rod 12 is started to drive the positioning plate 13 to move to fix the substrate plate 15 and the layer to be etched 16.
[0027] Reference Figure 3 As shown, a photoresist layer 17 is provided on the top of the layer to be etched 16, a first exposure pattern 18 is provided on the top of the photoresist layer 17, and second exposure patterns 19 are provided on both sides of the first exposure pattern 18, the ratio of the area of the first exposure pattern 18 to the total area of the mask body 5 is less than a preset ratio, and the ratio of the sum of the areas of the second exposure pattern 19 and the first exposure pattern 18 to the total area of the mask body 5 is within a preset range. The photoresist layer 17 can be used to perform anisotropic etching of the layer to be etched 16. Since the second exposure pattern 19 is a sub-resolution auxiliary pattern, it will not be imaged to the photoresist layer 17, and thus will not affect the etching of the layer to be etched 16. At the same time, the existence of the second exposure pattern 19 increases the pattern density in the mask, avoiding the problem of heating and deformation of the mask due to excessive concentration of light intensity caused by too small pattern density on the mask when patterning the photoresist, thereby improving the etching accuracy of the layer to be etched 16 in the present device.
[0028] Reference Figure 1-2As shown, the surface of the mask version body 5 is provided with a plurality of placement grooves 20, and light and shadow strips are movably clamped inside the plurality of placement grooves 20. A cylinder 21 is provided at the bottom of the base plate 1, and a universal wheel 22 is provided at the bottom of the cylinder 21. The light and shadow strips can be installed in the placement grooves 20, so that when the photolithography process is exposed, these patterns scatter the light and will not be transferred to the photoresist layer 17, thereby improving the use effect.
[0029] Working principle of the utility model: When the utility model is used, the user first applies glue between the workbench 14 and the base plate 1, and applies thread locking glue Loctite to the tightening screws to ensure the sealing of the mask stage bracket, and then starts the second electric telescopic rod 12 to drive the positioning plate 13 to move and fix the substrate plate 15 and the layer to be etched 16, and then rotates the threaded column 9, and then moves the movable sleeve 8 up and down on the surface of the pillar 7, so as to improve the practical effect of the device, and then drives the focusing frame 10 to move up and down, so that the lens 11 moves, and after it reaches a suitable position, tightens the clamping threaded column 9 to fix the lens 11, and finally starts the first electric telescopic rod 3 to drive the fixing frame 4 to move up and down, and the fixing frame 4 drives the mask version body 5 to move, and the mask version body 5 drives the internal mask pattern to move, and the light and shadow strips can be installed in the placement groove 20, so that when the photolithography process is exposed, these patterns scatter the light and will not be transferred to the photoresist layer 17, thereby improving the use effect;
[0030] A layer to be etched 16 is formed on the substrate, a photoresist layer 17 is formed on the layer to be etched 16, and a photolithography process is performed to image the pattern of the mask onto the photoresist layer 17, wherein the pattern of the mask includes a first exposure pattern 18 that can be exposed and a second exposure pattern 19 that is a sub-resolution auxiliary pattern, the ratio of the area of the first exposure pattern 18 to the total area of the mask body 5 is less than or equal to a preset ratio, and the ratio of the sum of the areas of the second exposure pattern 19 and the first exposure pattern 18 to the total area of the mask body 5 is within a preset ratio. In the range, the photoresist layer 17 can be used to perform anisotropic etching of the layer to be etched 16. Since the second exposure pattern 19 is a sub-resolution auxiliary pattern, it will not be imaged to the photoresist layer 17, and thus will not affect the etching of the layer to be etched 16. At the same time, the existence of the second exposure pattern 19 increases the pattern density in the mask, thereby avoiding the problem of heating and deformation of the mask due to excessive light concentration caused by too small pattern density on the mask when patterning the photoresist, thereby improving the etching accuracy of the layer to be etched 16 in the present device.
[0031] The above are all preferred embodiments of the present application, and the protection scope of the present application is not limited thereto. Therefore, any equivalent changes made according to the structure, shape, and principle of the present application should be included in the protection scope of the present application.
Claims
1. A semiconductor photomask holder assembly with non-wear protection, comprising a base plate (1), characterized in that: Two support plates (2) are arranged on the top of the base plate (1), a positioning mechanism is arranged on one side of the two support plates (2), and an adjustment mechanism is arranged on the top of the support plates (2); The adjustment mechanism comprises a first electric telescopic rod (3) arranged on the top of the support plate (2); a fixed frame (4) is arranged on the top of the first electric telescopic rod (3); a mask version body (5) is arranged inside the fixed frame (4); a mask groove is opened inside the mask version body (5); a mask pattern (6) is arranged inside the mask groove; a support (7) is arranged on one side of the base plate (1); a movable sleeve (8) is sleeved on the surface of the support (7); a threaded column (9) is arranged on one side of the movable sleeve (8); a focusing frame (10) is arranged on one side of the movable sleeve (8); a lens (11) is arranged inside the focusing frame (10).
2. A semiconductor photomask holder assembly with non-wear protection according to claim 1, characterized in that: The positioning mechanism comprises a second electric telescopic rod (12) arranged on one side of the support plate (2), a positioning plate (13) is arranged on one side of the second electric telescopic rod (12), and a silicone layer is arranged on one side of the positioning plate (13).
3. A semiconductor photomask holder assembly with non-wear protection according to claim 1, characterized in that: A workbench (14) is arranged on the top of the base plate (1), a substrate plate (15) is arranged on the top of the workbench (14), and a layer to be etched (16) is arranged on the top of the substrate plate (15).
4. A semiconductor photomask holder assembly with non-wear protection according to claim 3, characterized in that: A photoresist layer (17) is arranged on the top of the layer to be etched (16), a first exposure pattern (18) is arranged on the top of the photoresist layer (17), and second exposure patterns (19) are arranged on both sides of the first exposure pattern (18).
5. A semiconductor photomask holder assembly with non-wear protection according to claim 4, characterized in that: The ratio of the area of the first exposure pattern (18) to the total area of the mask body (5) is less than a preset ratio, and the ratio of the sum of the areas of the second exposure pattern (19) and the first exposure pattern (18) to the total area of the mask body (5) is within a preset range.
6. The semiconductor photomask holder assembly with non-wear protection according to claim 1, characterized in that: The surface of the mask body (5) is provided with a plurality of placement grooves (20), and light and shadow strips are movably clamped inside the plurality of placement grooves (20).
7. The semiconductor photomask holder assembly with non-wear protection according to claim 1, characterized in that: A cylinder (21) is arranged at the bottom of the base plate (1), and a universal wheel (22) is arranged at the bottom of the cylinder (21).