Vehicle high-power semiconductor device with heat dissipation bottom plate module

Abstract

The utility model discloses a vehicle high-power semiconductor device with a heat dissipation bottom plate module. The vehicle high-power semiconductor device comprises a shell assembly, a heat dissipation assembly and a chip assembly, the heat dissipation assembly comprises a heat dissipation substrate and pin fins. The chip assembly comprises a double-sided copper-clad ceramic plate, a chip set, a Pi n pin and a connecting copper sheet. Compared with the prior art, the vehicle high-power semiconductor device with the heat dissipation bottom plate module provided by the utility model has the advantages that the chips in the chipset are arranged in a straight line, so that the current distribution is more uniform and the current density is reduced while the stray inductance is reduced. Through the arrangement of the connecting copper sheet, the problem that the bonding wire is easy to fall off is avoided, the service life and reliability of the chip are effectively improved, and the connecting copper sheet is integrally formed, so that the temperature between the chips can be mutually compensated, and the temperature difference between the chips is reduced. And meanwhile, the heat dissipation assembly is arranged, and rhombic pin fins are adopted, so that the heat dissipation capability is greatly improved, and the temperature distribution of the chip is more uniform.

Description

Technical Field

[0001] The utility model relates to the technical field of power semiconductor device packaging, in particular to a vehicle-used high-power semiconductor device with a heat dissipation base plate module. Background Art

[0002] Power semiconductor modules are increasingly used in today's society, involving many fields, especially in the field of new energy, where they occupy the position of core components. The three-in-one electric drive system aims to integrate the drive motor, motor controller and gearbox into one, making the overall miniaturization and lightweight, reducing product cost and volume, and greatly improving system reliability. Therefore, while the size of the power module in the motor controller is reduced, the performance of the power module also needs to be improved, which will lead to a higher heat flux density of the chip in the power module. The overheating problem of the chip will cause the power module to fail to operate normally or reduce its working life, which will cause certain safety hazards to drivers. The heat dissipation requirements of the power module are becoming more and more stringent, and it is necessary to design a device with stronger heat dissipation capabilities.

[0003] like Figure 2 The prior art Hybrid PACK Drive power module shown includes a housing 001, a substrate 002, a plurality of chips 003, and a plurality of heat dissipation pins (not shown), wherein the chips 003 are connected by bonding wires 004. This structure has the following problems:

[0004] ① The reliability of the bonding wire is poor. The bonding wire connecting the signal terminal is easy to fall off. When the bonding wire is used, the chip current distribution is uneven and the stray inductance is high, which affects the performance of the chip.

[0005] ② In order to facilitate the connection of bonding wires, the chips are arranged in a "pin" shape. The current is prone to generate stray inductance, and the thermal coupling affects each other, resulting in a large heat dissipation pressure on the heat dissipation system. The heat dissipation capacity of the cylindrical heat dissipation needle is not enough to meet the heat dissipation needs of the chip. Utility Model Content

[0006] In view of this, the utility model provides a vehicle-used high-power semiconductor device with a heat dissipation base plate module to solve the above technical problems.

[0007] A high-power semiconductor device for automobiles with a heat dissipation baseplate module comprises a shell assembly, a heat dissipation assembly arranged on the shell assembly, and a chip assembly arranged on the shell assembly. The shell assembly is a rectangular block structure with a cavity, and the chip assembly is arranged in the cavity. The heat dissipation assembly comprises a heat dissipation substrate arranged on the shell assembly, and a plurality of pin fins arranged on the heat dissipation substrate. The heat dissipation substrate is a rectangular plate-like structure, and is fixed to the shell assembly by a fastener or a snap-on structure, and a sealing strip or a sealant is used between the two for sealing. The pin fins and the chip assembly are respectively located on both sides of the heat dissipation substrate, and the chip assembly and the shell assembly are located on the same side and are arranged in the cavity of the shell assembly. The pin fins are needle-shaped or columnar protrusions with a rhombus-shaped cross section. All the pin fins are arranged in an array, with one end arranged on the heat dissipation substrate and the other end extending toward a side away from the chip assembly. The chip assembly includes a plurality of double-sided copper-clad ceramic boards arranged on the heat dissipation substrate, a plurality of chip groups arranged on the double-sided copper-clad ceramic boards, a plurality of Pin pins arranged on the double-sided copper-clad ceramic boards, and a plurality of connecting copper sheets connecting the chip groups. The components of the chip group are all fixed on the double-sided copper-clad ceramic boards by soldering with tin sheets or solder paste, and are connected to each other through the connecting copper sheets, and the chips are arranged in a "one" shape instead of the original "pin" shape.

[0008] Furthermore, the shell assembly is made by injection molding, and the main body is fixed to the heat dissipation assembly by epoxy sealant and fasteners.

[0009] Furthermore, the heat dissipation substrate is a nickel-plated aluminum plate or a nickel-plated copper plate, that is, the inside is an aluminum layer or a copper layer, and the outside is a nickel-plated layer. The thickness of the substrate is between 2 and 5 mm, and the thickness of the nickel-plated layer is 3 to 7 μm.

[0010] Furthermore, the double-sided copper-clad ceramic board is soldered to the heat dissipation substrate via tin sheets or solder paste, and comprises a connecting copper layer, a ceramic layer and a copper-clad layer which are stacked in sequence.

[0011] Furthermore, the connecting copper layer is arranged on the upper part of the ceramic layer, and a printed circuit is arranged inside, and the ceramic layer is arranged in the middle part, including Al 2 O 3 Ceramic layer, Al 2 O 3 Doped zirconia ceramic layer, AlN ceramic layer and Si 3 N 4 The ceramic layer, the copper cladding layer is arranged at the lower part of the ceramic layer.

[0012] Furthermore, the Pin pin is fixed and inserted on the double-sided copper-clad ceramic board, one end of which extends vertically upward, and the other end of which is connected to the corresponding chip of the chipset through the connecting copper sheet.

[0013] Furthermore, the chipset includes an NTC resistor, an IGBT chip and a diode chip.

[0014] Compared with the prior art, the automotive high-power semiconductor device with a heat dissipation baseplate module provided by the utility model arranges the chips in the chipset in a line, thereby reducing the noise and making the current distribution more uniform and the current density lower. By setting the connecting copper sheet, the problem of the bonding wire easily falling off is avoided, and the service life and reliability of the chip are effectively improved. The connecting copper sheet is integrally formed, and the temperature between the chips can compensate for each other, thereby reducing the temperature difference between the chips. At the same time, by setting the heat dissipation component and using the diamond-shaped pin fins, the heat dissipation capacity is greatly improved, and the chip temperature distribution is more uniform. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 The utility model provides a structural schematic diagram of a high-power semiconductor device for a vehicle with a heat dissipation base plate module.

[0016] Figure 2 It is a schematic diagram of the structure of a conventional Hybrid PACK Drive power module.

[0017] Figure 3 for Figure 1 A schematic top view of a high-power semiconductor device for an automobile with a heat dissipation base plate module.

[0018] Figure 4 for Figure 1 Schematic diagram of the exploded structure of an automotive high-power semiconductor device with a heat dissipation baseplate module. DETAILED DESCRIPTION

[0019] The following is a further detailed description of the specific embodiments of the present invention. It should be understood that the description of the embodiments of the present invention herein is not intended to limit the protection scope of the present invention.

[0020] like Figures 1 to 4As shown, it is a schematic diagram of the structure of a high-power semiconductor device for a vehicle with a heat dissipation base plate module provided by the utility model. The high-power semiconductor device for a vehicle with a heat dissipation base plate module includes a housing component 10, a heat dissipation component 20 arranged on the housing component 10, and a chip component 30 arranged on the housing component 10. It can be imagined that the high-power semiconductor device for a vehicle with a heat dissipation base plate module also includes some other functional modules, such as connection components, mounting components, etc., which are well known to those skilled in the art and will not be described one by one here.

[0021] The housing assembly 10 is a base for carrying the above-mentioned functional modules, and is a rectangular block structure with a cavity, which is made by injection molding, and the main body is fixed to the heat dissipation assembly 20 by epoxy sealant and fasteners, and the chip assembly 30 is arranged in the cavity. In addition, the housing assembly 10 is also provided with a variety of other functional structures, such as screws, buckles, through holes, etc., to complete the installation and assembly of the above-mentioned functional modules, which can be arranged according to actual needs and will not be described in detail one by one here.

[0022] The heat dissipation assembly 20 includes a heat dissipation substrate 21 disposed on the housing assembly 10 , and a plurality of pin fins 22 disposed on the heat dissipation substrate 21 .

[0023] The heat dissipation substrate 21 is a rectangular plate structure, and is fixed to the housing assembly 10 by fasteners or snap-on structures, and a sealing strip or sealant is used to seal the two. The heat dissipation substrate 21 is a nickel-plated aluminum plate or a nickel-plated copper plate, that is, the interior is an aluminum layer or a copper layer, and the exterior is a nickel-plated layer. The thickness of the substrate is between 2 and 5 mm, and the thickness of the nickel-plated layer is 3 to 7 μm. The pin fins 22 and the chip assembly 30 are respectively located on both sides of the heat dissipation substrate 21, and the chip assembly 30 is located on the same side as the housing assembly 10 and is arranged in the cavity of the housing assembly 10, so that when the chip heats up, the heat dissipation substrate 21 can direct the heat to the pin fins 22.

[0024] The pin fins 22 are needle-shaped or columnar protrusions with a diamond-shaped cross-section. All of the pin fins 22 are arranged in an array, with one end arranged on the heat dissipation substrate 20 and the other end extending toward a side away from the chip assembly 30. When in use, the pin fins 22 can be placed in a cooling groove, and the heat is taken away by the flow of coolant that contacts the pin fins 22. It can be imagined that the use of a columnar structure with a diamond-shaped cross-section can increase the contact area with the fluid while conforming to the flow direction of the fluid, thereby improving the heat dissipation capacity.

[0025] The chip assembly 30 includes a plurality of double-sided copper-clad ceramic boards 31 arranged on the heat dissipation substrate 21, a plurality of chip groups 32 arranged on the double-sided copper-clad ceramic boards 31, a plurality of pin needles 33 arranged on the double-sided copper-clad ceramic boards 31, and a plurality of connecting copper sheets 34 connecting the chip groups 32.

[0026] The double-sided copper-clad ceramic board 31 is soldered to the heat dissipation substrate 21 by tin sheet or solder paste, and includes a connecting copper layer, a ceramic layer and a copper-clad layer stacked in sequence. The connecting copper layer is arranged on the upper part of the ceramic layer, and a printed circuit is arranged inside. The ceramic layer is arranged in the middle, including Al 2 O 3 Ceramic layer, Al 2 O 3 Doped zirconia ceramic layer, AlN ceramic layer and Si 3 N 4 The copper-clad layer is arranged at the lower part of the ceramic layer.

[0027] The chipset 32 ​​includes structures such as NTC resistors, IGBT chips and diode chips, which are common technologies in the field of semiconductor chips and should be well known to those skilled in the art, so they will not be described in detail here. The components of the chipset 32 ​​are all fixed on the double-sided copper-clad ceramic board 21 by soldering with tin sheets or solder paste, and are interconnected by the connecting copper sheet 34, and each chip is changed from the original "pin" shape to a "one" shape, which is convenient for the connection of the connecting copper sheet 34, while effectively reducing the current noise, making the current distribution more uniform.

[0028] The Pin needle 33 is fixed and inserted on the double-sided copper-clad ceramic board 31, with one end extending vertically upward to connect with an external device, and the other end connected to the corresponding chip of the chipset 32 ​​through the connecting copper sheet 34, thereby realizing the connection between the chip and the outside.

[0029] The connecting copper sheet 34 connects the circuit with the chipset 32 ​​and the pin needle, replacing the traditional bonding wire. It can reduce the stray inductance of the module itself, and can also improve the heat dissipation capacity of the chipset 32, while avoiding the bonding wire from falling off, which affects the life and reliability. When the module is powered on, the connecting copper sheet 34 can increase the cross-sectional area of ​​the current flow, which can further reduce its own stray inductance, making the current distribution more uniform and the signal terminal waveform more stable. Copper has excellent thermal conductivity. The copper sheet connecting the various components of the chipset 32 ​​is integrally formed, and the temperatures between the chips compensate each other, thereby reducing the temperature difference between the chips.

[0030] Compared with the prior art, the automotive high-power semiconductor device with a heat dissipation baseplate module provided by the utility model arranges the chips in the chipset 32 ​​in a line, thereby reducing the noise and making the current distribution more uniform and the current density lower. By setting the connecting copper sheet 34, the problem of easy falling off of the bonding wire is avoided, and the service life and reliability of the chip are effectively improved. The connecting copper sheet 34 is integrally formed, and the temperature between the chips can compensate for each other, thereby reducing the temperature difference between the chips. At the same time, by setting the heat dissipation component 20 and using the diamond-shaped pin fins 22, the heat dissipation capacity is greatly improved, and the chip temperature distribution is more uniform.

[0031] The above are only preferred embodiments of the present invention and are not intended to limit the protection scope of the present invention. Any modification, equivalent substitution or improvement within the spirit of the present invention are included in the scope of the claims of the present invention.

Claims

1. A high-power semiconductor device for a vehicle with a heat dissipation base module, characterized in that: The vehicle high-power semiconductor device with a heat dissipation bottom plate module includes a housing assembly, a heat dissipation assembly disposed on the housing assembly, and a chip assembly disposed on the housing assembly. The housing assembly is a rectangular block structure with a cavity, and the chip assembly is disposed in the cavity. The heat dissipation assembly includes a heat dissipation substrate disposed on the housing assembly and a plurality of pin fins disposed on the heat dissipation substrate. The heat dissipation substrate is a rectangular plate structure and is fixed to the housing assembly by fasteners or snap structures, and a sealing strip or sealant is used for sealing between the two. The pin fins and the chip assembly are respectively located on both sides of the heat dissipation substrate, and the chip assembly and the housing assembly are located on the same side and are disposed in the cavity of the housing assembly. The pin fins are needle-shaped or columnar protrusions with a rhombic cross-section, and all the pin fins are arranged in an array, with one end disposed on the heat dissipation substrate and the other end extending toward the side away from the chip assembly. The chip assembly includes a plurality of double-sided copper-clad ceramic plates disposed on the heat dissipation substrate, a plurality of chip groups disposed on the double-sided copper-clad ceramic plates, a plurality of Pin pins disposed on the double-sided copper-clad ceramic plates, and a plurality of connecting copper sheets connecting the chip groups. The components of the chip groups are all welded and fixed on the double-sided copper-clad ceramic plates by solder sheets or solder paste and are connected to each other through the connecting copper sheets, and the original "pin" shape arrangement of each chip is changed to a "one" shape arrangement.

2. The automotive high-power semiconductor device with a heat dissipation base module according to claim 1, characterized in that: The housing assembly is made by injection molding, and the main part is fixed to the heat dissipation assembly by epoxy sealant and fasteners.

3. The automotive high-power semiconductor device with a heat dissipation base module as claimed in claim 1, characterized in that: The heat dissipation substrate is a nickel-plated aluminum plate or a nickel-plated copper plate, that is, the inner layer is an aluminum layer or a copper layer, and the outer layer is a nickel-plated layer. The thickness of the substrate is between 2 and 5 mm, and the thickness of the nickel-plated layer is between 3 and 7 μm.

4. The automotive high-power semiconductor device with a heat dissipation base module as claimed in claim 1, characterized in that: The double-sided copper-clad ceramic plate is welded to the heat dissipation substrate by a solder sheet or solder paste and includes a connecting copper layer, a ceramic layer, and a copper-clad layer stacked in sequence.

5. The automotive high-power semiconductor device with a heat dissipation base module as claimed in claim 4, characterized in that: The connecting copper layer is disposed on the upper part of the ceramic layer and has a printed circuit inside. The ceramic layer is disposed in the middle and includes an Al2O3 ceramic layer, an Al2O3-doped zirconia ceramic layer, an AlN ceramic layer, and a Si3N4 ceramic layer. The copper-clad layer is disposed on the lower part of the ceramic layer.

6. The automotive high-power semiconductor device with a heat dissipation base module as claimed in claim 1, characterized in that: The Pin pins are fixed and inserted on the double-sided copper-clad ceramic plate, with one end extending vertically upward and the other end connected to the corresponding chips of the chip group through the connecting copper sheets.

7. The automotive high-power semiconductor device with a heat dissipation base module as claimed in claim 1, characterized in that: The chip group includes an NTC resistor, an IGBT chip, and a diode chip.

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