Array column structure for chip packaging

Abstract

The utility model relates to the technical field of chip packaging, and discloses an array column structure for chip packaging, which comprises a plastic package integration platform and an array column assembly embedded in the plastic package integration platform, the array column assembly comprises a plurality of guide columns, and at least one end of each guide column is provided with an electroplated layer; the lower surface of the plastic package integration platform is flush with the lower end face of the array column assembly, and the distance between the upper surface of the plastic package integration platform and the upper end face of the array column assembly is h1; or, the distance between the upper surface of the plastic package integration platform and the upper end face of the array column assembly is h2, and the distance between the lower surface of the plastic package integration platform and the lower end face of the array column assembly is h3; wherein h1 is greater than 0, h2 is greater than 0, h3 is greater than 0, h1 is greater than h2, and h1 is greater than h3; according to the array column structure for chip packaging provided by the utility model, the problems of high difficulty, low reliability and low efficiency of a single copper column in packaging and integration are solved.

Description

Technical Field

[0001] The utility model relates to the technical field of chip packaging, in particular to an array column structure for chip packaging. Background Art

[0002] The development trend of integrated circuits is to pursue more and more multi-functions, high performance, high heat dissipation, high integration, high reliability and low cost. Chip packaging technology plays a vital role in the production process of integrated circuits. The feasibility, packaging quality and packaging reliability of chip packaging process directly determine whether the integrated circuit meets the design requirements and whether it can be manufactured. The packaging process determines the structure and performance of the integrated circuit. The proportion of packaging cost in the total cost of integrated circuits is also increasing. As the wafer process of integrated circuits develops to the nanometer level, the number of transistors integrated on the chip develops towards higher density, the number of input and output signal IO pins is increasing, and the spacing of IO pins is developing to less than 100μm. The packaging process technology is developing towards higher density. Copper pillar bump packaging technology, with its unique advantages of fine bump spacing, good thermal conductivity, anti-electromigration performance, quality consistency and reliability, has become the core technology of advanced chip packaging technology, leading the development of chip packaging technology towards high density and ultra-fine spacing.

[0003] At present, the copper pillar packaging technology solution directly uses a single copper pillar, and the single copper pillar is packaged into a braided tape. The single copper pillar is processed individually by mechanical processing, surface treated and then made into a braided tape for easy use in an automated manner. The main steps of this process are as follows:

[0004] (1) Preparation of copper plates and machining molds;

[0005] (2) The copper column is stamped and machined to obtain a single copper column of required size;

[0006] (3) Surface treatment of copper pillars;

[0007] (4) Copper pillar tape packaging: a single copper pillar is packaged in a reel to facilitate the use of automated packaging equipment.

[0008] Prior art (I) is the use of a single copper column braid, such as Figure 1 and Figure 2 The main problems of the existing copper pillars shown are as follows:

[0009] (1) It is difficult to electroplate nickel and solder layers on the upper and lower end surfaces of a single isolated copper pillar. The solder joints formed by the end surfaces of the copper pillars during packaging integration lack the strengthening and improvement effects of nickel metal, and the intermetallic compounds (IMC) at the solder joint interface are coarse, posing a long-term reliability risk;

[0010] (2) It is difficult to process solder bumps: a single copper column is not conducive to fixation, and it is difficult to process solder bumps at the end of the copper column;

[0011] (3) The size of a single copper pillar. Due to limitations in machining methods and manufacturing processes, the diameter of a copper pillar cannot be further reduced. Generally, 200 μm is a small size. Further miniaturization is limited by process and application. Therefore, the diameter of a single isolated copper pillar cannot be made very small. Due to the limitations of machining process capabilities, it does not meet the requirements of high-density and miniaturized chip packaging applications.

[0012] (4) The length of a single copper column cannot be too long. Due to the limitations of the processing method and the copper column welding process, a single copper column is prone to tipping over and position shifting during the welding process, which affects the application quality of the copper column and customer satisfaction.

[0013] (5) Single copper pillars are used one by one in the packaging process. The production efficiency of automated use is relatively low, and the cost-effectiveness is not very competitive;

[0014] (6) A single isolated copper pillar is subject to processing methods such as machining and chemical etching, resulting in large dimensional tolerance and low precision. In the application scenarios of a single copper pillar, the spacing between the copper pillars cannot be too small, which limits the technological development of semiconductor packaging.

[0015] Therefore, there is room for improvement, and the utility model provides an array column structure for chip packaging. Utility Model Content

[0016] The purpose of the utility model is to provide an array column structure for chip packaging, so as to solve at least one of the above problems existing in the prior art.

[0017] In order to achieve the above purpose, the utility model adopts the following technical solutions:

[0018] An array column structure for chip packaging comprises a plastic encapsulation integrated platform and an array column assembly embedded in the plastic encapsulation integrated platform, wherein the array column assembly comprises a plurality of guide columns, and at least one end of the guide columns is provided with an electroplating layer; the lower surface of the plastic encapsulation integrated platform is arranged flush with the lower end surface of the array column assembly, and the spacing between the upper surface of the plastic encapsulation integrated platform and the upper end surface of the array column assembly is h1; or, the spacing between the upper surface of the plastic encapsulation integrated platform and the upper end surface of the array column assembly is h2, and the spacing between the lower surface of the plastic encapsulation integrated platform and the lower end surface of the array column assembly is h3; wherein, h1>0, h2>0, h3>0, h1>h2, h1>h3.

[0019] The technical solution has the following advantages: (1) The array column assembly of the utility model includes a plurality of guide columns, which are embedded in the plastic packaging integrated platform. The guide columns can be prepared in advance, saving production and processing time, and the single and isolated guide columns are gathered in the plastic packaging integrated platform to form a whole. Since several guide columns are integrated in the plastic packaging integrated platform to form an array, they can be used automatically. The plastic packaging integrated platform is used as a force point for equipment to absorb and place, which is convenient for the subsequent packaging process to use the guide columns automatically, and is compatible with the existing chip packaging equipment capabilities and process capabilities; (2) Each guide column has at least one end provided with an electroplating layer, so that the solder joint formed by the end face of the guide column in the packaging integration has the strengthening and improvement effect of metal nickel, which solves the problem of coarse intermetallic compound IMC at the solder joint interface and the long-term reliability hidden danger; (3) Since the lower surface of the plastic packaging integrated platform is flush with the lower end face of the array column assembly, the distance between the upper surface of the plastic packaging integrated platform and the upper end face of the array column assembly is h1, and the distance h1 is greater than 0. The distance h1 is achieved by controlling the ablation height during the laser ablation process as needed. Since the distance between the upper surface of the plastic-encapsulated integrated platform and the upper end surface of the array column assembly is h2, and the distance between the lower surface of the plastic-encapsulated integrated platform and the lower end surface of the array column assembly is h, the distance h3 and the distance h2 are both greater than 0, and h1>h2, h1>h3, so that the guide column is exposed on both sides of the plastic-encapsulated integrated platform. Optimally, the distance h3 and the distance h2 can be equal so that the plastic-encapsulated integrated platform is in the middle of the guide column. In summary, in combination with the electroplating layer being provided at one or both ends of the guide column, the technical solution can respectively provide four specific array column structures, namely, an array column structure with unidirectional laser ablation of a single-sided electric welding layer, an array column structure with unidirectional laser ablation of a double-sided electric welding layer, an array column structure with bidirectional laser ablation of a single-sided electric welding layer, and an array column structure with bidirectional laser ablation of a double-sided electric welding layer. The guide pillars of the array pillar structure with unidirectional laser ablation of the single-side welding layer and the array pillar structure with unidirectional laser ablation of the double-side welding layer are exposed on one side of the plastic package integrated platform, and the guide pillars of the array pillar structure with bidirectional laser ablation of the single-side welding layer and the array pillar structure with bidirectional laser ablation of the double-side welding layer are exposed on both sides of the plastic package integrated platform. (4) The height of a single guide pillar can be made very high as needed. Since the array pillar structure is integrated into a joint body, the plastic package integrated platform supports and limits the guide pillars, solving the problem of the guide pillars tipping over during the welding process; (5) Similarly, since the array pillar assembly is integrated into a joint body, firstly, the diameter of a single guide pillar can be made very small as needed, solving the bottleneck problem of the machining process and maximizing the satisfaction of high-density and miniaturized chip packaging applications; secondly, the spacing between the guide pillars can be very small, meeting the requirements of advanced packaging processes and supporting the development of semiconductor packaging technology; specifically, the diameter of the guide pillars can be differentiated through chemical etching processes or electroplating and chemical plating processes, allowing different diameter series of metal pillars to coexist, solving the problem of high-voltage and high-current flow capacity application scenarios.

[0020] Furthermore, in order to provide a plastic-sealed integrated platform made of two different materials, the plastic-sealed integrated platform is made of plastic sealant, UF sealant, insulating glass or ceramic.

[0021] Further, in order to provide guide pillars made of different materials, the guide pillars include metal core pillars, which are made of metal materials; or the guide pillars include plastic core pillars, which are made of organic materials. The utility model can adopt two different preparation methods, and different array pillar structures can be obtained under the premise of ensuring dimensional consistency and high precision, and both preparation methods can be precisely controlled.

[0022] Furthermore, a metal thickening layer is formed on the outer wall of the metal core column or the plastic core column. The diameters of the guide columns can be processed differently, allowing metal columns of different diameter series to coexist, solving the problem of high voltage and high current flow capacity application scenarios.

[0023] Furthermore, the outer wall of the guide pillar can be chemically etched to reduce the diameter of the guide pillar. The diameters of the guide pillars can be processed differently, allowing metal pillars of different diameter series to coexist, solving the problem of high voltage and high current flow capacity application scenarios.

[0024] Furthermore, both ends of the guide pillar are provided with electroplating layers. Electroplating can be performed on one side or on both sides as required. Electroplating layers are provided on the upper and lower end surfaces of each guide pillar, so that the solder joints formed by the end surfaces of the guide pillars in the packaging integration are strengthened and improved by the metal nickel, solving the problem of coarse intermetallic compounds IMC at the interface of the solder joints, which poses a long-term reliability risk.

[0025] Furthermore, the electroplated layer includes an electroplated nickel layer, and the electroplated nickel layer is electroplated on the end surface of the guide pillar.

[0026] Furthermore, the electroplated layer also includes a solder layer or a gold-plated layer, and the solder layer or the gold-plated layer is welded on the electroplated nickel layer.

[0027] The utility model also provides a method for preparing an array column structure for chip packaging, which comprises the following steps:

[0028] S1. Prepare a carrier board: prepare a carrier board;

[0029] S2. Guide pillar array production:

[0030] If metal material is used to make the guide pillars, a metal core pillar array is formed by vertically bonding the wires on the carrier board through a wire bonding process;

[0031] If an organic material is used to make the guide pillar, a plastic sealing body with a certain thickness is formed on a carrier plate by plastic sealing, or a plurality of truncated cone-shaped array pillars with the same height are formed on the carrier plate by injection molding; then the plastic sealing body or the truncated cone-shaped array pillars are precisely ablated or engraved by laser ablation to obtain a plurality of plastic core pillars with set sizes and spacings and form a plastic core pillar array;

[0032] S3. Adjustment of the guide column diameter: coating the outer wall of the metal core column with a metal thickening layer, or reducing the size of the metal core column by chemical etching; coating the outer wall of the plastic core column with a metal thickening layer;

[0033] S4, plastic sealing: plastic sealing the guide pillars with adjusted sizes, and uniformly forming a plastic sealing integrated platform on all guide pillars;

[0034] S5, flat grinding: remove the carrier plate by grinding and flatten the end surface of the guide post until the cross section of the guide post is exposed;

[0035] S6, electroplating nickel and soldering: electroplating nickel on the cross section of the guide pillar to form an electroplated nickel layer, and then electroplating solder on the electroplated nickel layer to form a solder layer;

[0036] S7, reflow process: a bump structure is formed on the solder layer through the reflow process;

[0037] S8, height margin processing: perform unidirectional laser ablation or bidirectional laser ablation on the plastic package integrated platform through laser technology to expose a certain length of guide pillar;

[0038] S9, cutting: separate the single array column structure through the cutting process.

[0039] Furthermore, in step S1, the package carrier is a copper plate, an aluminum plate or a ceramic substrate; in step S2, the metal column is a gold column, a silver column or a copper column.

[0040] The beneficial effects of the utility model are as follows: (1) The array column assembly of the utility model includes a plurality of guide columns, which are embedded in the plastic packaging integrated platform. The guide columns can be prepared in advance, saving production and processing time, and the single and isolated guide columns are gathered in the plastic packaging integrated platform to form a whole. Since a plurality of guide columns are integrated in the plastic packaging integrated platform to form an array, the plastic packaging integrated platform can be used automatically. The plastic packaging integrated platform is used as a force point for equipment to absorb and place, which is convenient for the subsequent packaging process to use the guide columns automatically, and is compatible with the existing chip packaging equipment capacity and process capacity; (2) Each guide column has at least one end provided with an electroplating layer, so that the solder joint formed by the end face of the guide column in the packaging integration has the strengthening and improvement effect of metal nickel, which solves the problem of coarse intermetallic compound IMC at the solder joint interface and the long-term reliability hidden danger; (3) Since the lower surface of the plastic packaging integrated platform is flush with the lower end face of the array column assembly, the distance between the upper surface of the plastic packaging integrated platform and the upper end face of the array column assembly is h1, and the distance h1 is greater than 0. The distance h1 is achieved by controlling the ablation height during the laser ablation process as needed. Since the distance between the upper surface of the plastic-encapsulated integrated platform and the upper end surface of the array column assembly is h2, and the distance between the lower surface of the plastic-encapsulated integrated platform and the lower end surface of the array column assembly is h, the distance h3 and the distance h2 are both greater than 0, and h1>h2, h1>h3, so that the guide column is exposed on both sides of the plastic-encapsulated integrated platform. Optimally, the distance h3 and the distance h2 can be equal so that the plastic-encapsulated integrated platform is in the middle of the guide column. In summary, in combination with the electroplating layer being provided at one or both ends of the guide column, the technical solution can respectively provide four specific array column structures, namely, an array column structure with unidirectional laser ablation of a single-sided electric welding layer, an array column structure with unidirectional laser ablation of a double-sided electric welding layer, an array column structure with bidirectional laser ablation of a single-sided electric welding layer, and an array column structure with bidirectional laser ablation of a double-sided electric welding layer. The guide pillars of the array pillar structure with unidirectional laser ablation of the single-side welding layer and the array pillar structure with unidirectional laser ablation of the double-side welding layer are exposed on one side of the plastic package integrated platform, and the guide pillars of the array pillar structure with bidirectional laser ablation of the single-side welding layer and the array pillar structure with bidirectional laser ablation of the double-side welding layer are exposed on both sides of the plastic package integrated platform. (4) The height of a single guide pillar can be made very high as needed. Since the array pillar structure is integrated into a joint body, the plastic package integrated platform supports and limits the guide pillars, solving the problem of the guide pillars tipping over during the welding process; (5) Similarly, since the array pillar assembly is integrated into a joint body, firstly, the diameter of a single guide pillar can be made very small as needed, solving the bottleneck problem of the machining process and maximizing the satisfaction of high-density and miniaturized chip packaging applications; secondly, the spacing between the guide pillars can be very small, meeting the requirements of advanced packaging processes and supporting the development of semiconductor packaging technology; specifically, the diameter of the guide pillars can be differentiated through chemical etching processes or electroplating and chemical plating processes, allowing different diameter series of metal pillars to coexist, solving the problem of high-voltage and high-current flow capacity application scenarios.(6) The utility model adopts two different preparation methods, and different array column structures can be produced under the premise of ensuring dimensional consistency and high precision, and both preparation methods can be precisely controlled. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 It is a schematic diagram of a single copper pillar in the prior art;

[0042] Figure 2 is a schematic diagram of another single copper pillar in the prior art;

[0043] Figure 3 This is a schematic diagram of the process of preparing an array column structure according to Example 9;

[0044] Figure 4 It is a schematic diagram of the structure of the array column structure with unidirectional laser ablation of the single-sided electric welding layer when the guide column is made of metal material;

[0045] Figure 5 It is a schematic diagram of the structure of the array column structure with bidirectional laser ablation of the single-sided electric welding layer when the guide column is made of metal material;

[0046] Figure 6 It is a schematic diagram of the structure of the array column structure with unidirectional laser ablation of the double-sided electric welding layer when the guide column is made of metal material;

[0047] Figure 7 It is a schematic diagram of the structure of the array column structure with bidirectional laser ablation of the double-sided electric welding layer when the guide column is made of metal material;

[0048] Figure 8 This is a schematic diagram of the process of preparing an array column structure according to Example 10;

[0049] Fig. 9 It is a schematic diagram of the structure of the array pillar structure with unidirectional laser ablation of the single-sided electric welding layer when the guide pillar is made of organic material;

[0050] Fig.10 A schematic diagram of the structure of an array column structure with bidirectional laser ablation of a single-sided electric welding layer when the guide column is made of organic material;

[0051] Fig.11 It is a schematic diagram of the structure of the array pillar structure with unidirectional laser ablation of the double-sided electric welding layer when the guide pillar is made of organic material;

[0052] Fig.12 It is a schematic diagram of the structure of the array pillar structure with bidirectional laser ablation of the double-sided electric welding layer when the guide pillar is made of organic material;

[0053] Fig.13 for Fig.12 A schematic diagram of the cross-sectional structure of the guide column cut in the horizontal direction;

[0054] Fig.14 It is a schematic diagram of a metal core metal array column in a fan-out package;

[0055] Fig.15 Schematic diagram of metal core metal array column in through-plastic hole POP;

[0056] Fig.16 Schematic diagram of metal core metal array column in HB-POP;

[0057] Fig.17 Schematic diagram of a plastic core metal array column in a fan-out package;

[0058] Fig.18 Schematic diagram of the plastic core metal array column in the through-plastic hole POP;

[0059] Fig.19 Schematic diagram of the plastic-core metal array column in HB-POP.

[0060] In the figure: plastic package integrated platform 1; guide pillar 2; metal core pillar 2.1; plastic core pillar 2.2; electroplated nickel layer 3; solder layer 4; metal thickening layer 5; bump structure 6; carrier board 7. DETAILED DESCRIPTION

[0061] In order to more clearly illustrate the technical solutions in the embodiments of the utility model or the prior art, the utility model will be briefly introduced below in combination with the drawings and the description of the embodiments or the prior art. Obviously, the following description of the structure of the drawings is only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. It should be noted that the description of these embodiments is used to help understand the utility model, but does not constitute a limitation of the utility model.

[0062] In the prior art, the copper pillars used in the copper pillar packaging technology are high copper pillars, wherein the high copper pillars refer to copper pillars with a height exceeding 50 μm, and the processing methods of the high copper pillars can be any one of precision mold casting, precision stamping, precision etching, and precision laser processing, or a combination of the methods. Due to the many defects in the high copper pillar packaging, it is necessary to design an array pillar structure for chip packaging, and to propose a corresponding preparation method. The array pillar assembly is obtained by the preparation method. The array pillar assembly can be used as a basic packaging structure in different integrated chip packaging systems, with stable quality and high reliability.

[0063] Embodiment 1:

[0064] like Figure 1-Figure 13As shown, this embodiment provides an array column structure for chip packaging, including a plastic package integrated platform 1 and an array column assembly embedded in the plastic package integrated platform 1, the array column assembly includes a plurality of guide columns 2, and the ends of the guide columns 2 are provided with an electroplating layer at least at one end for the needs of packaging process and quality; in order to meet different application scenarios in a specific packaging solution, the upper end surface and the lower end surface of the array column assembly are used as reference surfaces, such as Figure 4 , Figure 6 , Fig. 9 and Fig.11 As shown, the lower surface of the plastic package integrated platform 1 is flush with the lower end surface of the array column assembly, and the distance between the upper surface of the plastic package integrated platform 1 and the upper end surface of the array column assembly is h1. At this time, it can be known that the plastic package integrated platform 1 is relatively at the bottom of the guide column 2; or Figure 5 , Figure 7 , Fig.10 and Fig.12 As shown, the distance between the upper surface of the plastic package integrated platform 1 and the upper end surface of the array column assembly is h2, and the distance between the lower surface of the plastic package integrated platform 1 and the lower end surface of the array column assembly is h3; wherein, h1>0, h2>0, h3>0, h1>h2, h1>h3. At this point, it can be known that the plastic package integrated platform 1 is relatively located in the middle of the guide column 2. Therefore, according to the different positions of the plastic package integrated platform 1, the final array column assembly is also different.

[0065] The technical solution has the following advantages: (1) The array column assembly of the utility model includes a plurality of guide columns 2, and the array column assembly is embedded in the plastic packaging integrated platform 1. The guide columns 2 can be prepared in advance, saving production and processing time, and the single, isolated guide columns 2 can be gathered into the plastic packaging integrated platform 1 to form a whole. Since several guide pillars 2 are integrated in the plastic encapsulation integrated platform 1 to form an array, it can be used automatically. The plastic encapsulation integrated platform 1 serves as a force point for equipment absorption and placement, which facilitates the automated use of the guide pillars 2 in the subsequent packaging process and is compatible with the existing chip packaging equipment capabilities and process capabilities; (2) Each guide pillar 2 has at least one end provided with an electroplating layer, so that the solder joints formed on the end faces of the guide pillars 2 during the packaging integration are strengthened and improved by the metal nickel, thereby solving the problem of coarse intermetallic compounds IMC at the solder joint interface and the long-term reliability risks; (3) Since the lower surface of the plastic encapsulation integrated platform 1 is flush with the lower end face of the array pillar assembly, the distance between the upper surface of the plastic encapsulation integrated platform 1 and the upper end face of the array pillar assembly is h1, and the distance h1 is greater than 0. The distance h1 is achieved by controlling the ablation height during the laser ablation process as required. Since the distance between the upper surface of the plastic-encapsulated integrated platform 1 and the upper end surface of the array column assembly is h2, the distance between the lower surface of the plastic-encapsulated integrated platform 1 and the lower end surface of the array column assembly is h, the distance h3 and the distance h2 are both greater than 0, and h1>h2, h1>h3, so that the guide column 2 is exposed on both sides of the plastic-encapsulated integrated platform 1. Optimally, the distance h3 and the distance h2 can be equal so that the plastic-encapsulated integrated platform 1 is located in the middle of the guide column 2. In summary, in combination with the electroplating layer being provided at one or both ends of the guide column 2, the technical solution can respectively provide four specific array column structures, namely, an array column structure with unidirectional laser ablation of a single-sided electric welding layer, an array column structure with unidirectional laser ablation of a double-sided electric welding layer, an array column structure with bidirectional laser ablation of a single-sided electric welding layer, and an array column structure with bidirectional laser ablation of a double-sided electric welding layer. The guide pillars 2 of the array column structure with unidirectional laser ablation of the single-sided welding layer and the array column structure with unidirectional laser ablation of the double-sided welding layer are exposed on one side of the plastic packaging integrated platform 1, and the guide pillars 2 of the array column structure with bidirectional laser ablation of the single-sided welding layer and the array column structure with bidirectional laser ablation of the double-sided welding layer are exposed on both sides of the plastic packaging integrated platform 1.(4) The height of a single guide pillar 2 can be made very high as needed. Since the array pillar structure is integrated into a union, the plastic package integrated platform 1 supports and limits the guide pillar 2, solving the problem of the guide pillar 2 tipping over during the welding process. (5) Similarly, since the array pillar assembly is integrated into a union, firstly, the diameter of a single guide pillar 2 can be made very small as needed, solving the bottleneck problem of the machining process and maximizing the satisfaction of high-density and miniaturized chip packaging applications. Secondly, the spacing between the guide pillars 2 can be very small, meeting the requirements of advanced packaging processes and supporting the development of semiconductor packaging technology. Specifically, the diameter of the guide pillar 2 can be differentiated through chemical etching process or electroplating, chemical plating process, allowing metal pillars of different diameter series to coexist and solving the problem of high-voltage and high-current flow capacity application scenarios.

[0066] Embodiment 2:

[0067] This embodiment is optimized based on the above-mentioned embodiment 1.

[0068] In order to provide a plastic-sealed integrated platform 1 made of a variety of different materials, the plastic-sealed integrated platform 1 is made of plastic glue, UF glue, insulating glass or ceramics.

[0069] Embodiment three:

[0070] This embodiment is optimized based on the above-mentioned embodiment 1.

[0071] In order to provide guide posts 2 made of different materials, such as Figure 4-Figure 7 As shown, the guide column 2 includes a metal core column 2.1, and the metal core column 2.1 is made of metal material; or Figure 9-12 As shown, the guide pillar 2 includes a plastic core pillar 2.2, and the plastic core pillar 2.2 is made of an organic material. The utility model can adopt two different preparation methods, and different array pillar structures can be prepared under the premise of ensuring dimensional consistency and high precision, and both preparation methods can be precisely controlled. Metal materials are not limited to gold, silver or copper, and organic materials are not limited to plastics. Depending on the material of the guide pillar 2, the final array pillar assembly is also different. In order to meet the packaging process requirements, in the array pillar assembly, the spacing between the guide pillars 2 is not limited, and the final array pillar assembly is also different depending on the spacing between the guide pillars 2.

[0072] Embodiment 4:

[0073] This embodiment is optimized based on the above-mentioned embodiment 3.

[0074] A metal thickening layer 5 is formed on the outer wall of the metal core column 2.1 or the plastic core column 2.2. The diameters of the guide columns 2 can be processed differently, allowing metal columns of different diameter series to coexist, solving the problem of high voltage and high current flow capacity application scenarios.

[0075] Embodiment five:

[0076] This embodiment is optimized based on the above-mentioned embodiment 1.

[0077] The outer wall of the guide pillar 2 can be chemically etched to reduce the diameter of the guide pillar 2. The diameters of the guide pillars 2 can be processed differently, allowing metal pillars of different diameter series to coexist, solving the problem of high voltage and high current flow capacity application scenarios.

[0078] The cross-sectional dimensions and shapes of the plurality of guide pillars 2 may be different to meet the requirements of high-power and high-current packaging. The cross-sectional shape of the guide pillar 2 may be a geometric shape such as a circle, a square, an ellipse, or a polygon.

[0079] Embodiment six:

[0080] This embodiment is optimized based on the above-mentioned embodiment 1.

[0081] Both ends of the guide pillar 2 are provided with electroplating layers. Electroplating can be performed on one side or on both sides as required. Electroplating layers are provided on the upper and lower end surfaces of each guide pillar 2, so that the solder joints formed by the end surfaces of the guide pillars 2 in the package integration have the strengthening and improvement effect of metal nickel, which solves the problem of coarse intermetallic compounds IMC at the interface of the solder joints, which poses a long-term reliability risk.

[0082] Embodiment seven:

[0083] This embodiment is optimized based on the above-mentioned embodiment one or six.

[0084] The electroplated layer includes an electroplated nickel layer 3 , and the electroplated nickel layer 3 is electroplated on the end surface of the guide pillar 2 .

[0085] Embodiment eight:

[0086] This embodiment is optimized based on the above-mentioned embodiment 7.

[0087] The electroplating layer further includes a solder layer 4 or a gold-plated layer, and the solder layer 4 or the gold-plated layer is soldered on the electroplated nickel layer 3. The final array column assembly is different according to the number of electroplating layers.

[0088] For the convenience of description, the present invention is divided into Embodiment 9 and Embodiment 10 according to the different materials used for the guide pillar 2 .

[0089] Embodiment 9: When the guide pillar 2 is made of metal material. Figure 3 As shown, the specific preparation method is as follows:

[0090] S1. Prepare a carrier board 7: prepare a carrier board 7, which may be a copper board, an aluminum board or a ceramic substrate, etc., for carrying the metal core column 2.1 in cooperation with the wire bonding process;

[0091] S2, guide pillar 2 assembly production: vertical wire bonding is performed on the carrier board 7 by wire bonding process to form a metal core pillar array; specifically, vertical wire bonding is performed by using an automated wire bonding device, where the metal core pillar 2.1 can be but not limited to a gold pillar, a silver pillar, a copper pillar or other metal core pillars 2.1 suitable for the wire bonding process;

[0092] S3, adjusting the diameter of the guide column 2: plating a metal thickening layer 5 on the outer wall of the metal core column 2.1 by electroplating or chemical plating, or reducing the size of the metal core column 2.1 by chemical etching;

[0093] S4, plastic encapsulation: encapsulate the guide pillars 2 as a whole with the carrier board 7 and the guide pillars 2 with adjusted sizes, and uniformly form a plastic encapsulation integrated platform 1 on all the guide pillars 2; the plastic encapsulation integrated platform 1 can be encapsulated with a plastic encapsulation adhesive material, and the plastic encapsulation integrated platform 1 can also be encapsulated with a bottom-filling UF adhesive material as required to obtain a structural combination with an optimal linear expansion coefficient CTE, or be made of insulating glass or ceramics;

[0094] S5, flat grinding: removing the carrier plate 7 by grinding and flattening the end surface of the guide pillar 2 until the cross section of the guide pillar 2 is exposed;

[0095] S6, nickel electroplating, solder: nickel is electroplated on the cross section of the guide pillar 2 to form a nickel electroplating layer 3, and then solder is electroplated on the nickel electroplating layer 3 to form a solder layer 4. It should be noted that electroplating can be performed on one side or on both sides as required, and correspondingly, step S6 includes step S6.1 of forming the nickel electroplating layer 3 and the solder layer 4 only on one end face of the guide pillar 2 and step S6.2 of forming the nickel electroplating layer 3 and the solder layer 4 on both end faces of the guide pillar 2;

[0096] S7, reflow soldering process: forming a bump structure 6 on the solder layer 4 through a reflow soldering process; it should be noted that, corresponding to step S6.1 and step S6.2, step S7 includes step S7.2 of forming the bump structure 6 only at one end of the guide pillar 2 and step S7.1 of forming the bump structure 6 at both ends of the guide pillar 2;

[0097] S8, height margin processing: perform unidirectional laser ablation or bidirectional laser ablation on the plastic package integrated platform 1 through a laser process to expose a certain length of the guide column 2 to be compatible with the packaging process UF (bottom filling) or molding (molding) requirements. It should be noted that, according to the selection of unidirectional laser ablation or bidirectional laser ablation, corresponding to step S7.1, step S8 includes steps S8.3 and S8.4 of performing unidirectional laser ablation or bidirectional laser ablation on the structure in step S7.1 respectively; corresponding to step S7.2, step S8 includes steps S8.1 and S8.2 of performing unidirectional laser ablation or bidirectional laser ablation on the structure in step S7.2 respectively;

[0098] S9, cutting: separate the single array column structure by cutting process. Specifically, separate the guide column array by mechanical cutting process or laser cutting process to obtain a single integrated guide column structure. It should be noted that, corresponding to step S8.1, step S8.2, step S8.3 and step S8.4, step S9 forms four metal core column array structures of step S9.1, step S9.2, step S9.3 and step S9.4 respectively.

[0099] It can be seen that four metal core column array structures are obtained in Example 9, such as Figure 4-Figure 7 , respectively, they are an array column structure with unidirectional laser ablation of a single-sided welding layer, an array column structure with bidirectional laser ablation of a single-sided welding layer, an array column structure with unidirectional laser ablation of a double-sided welding layer, and an array column structure with bidirectional laser ablation of a double-sided welding layer.

[0100] Embodiment 10: When the guide pillar 2 is made of organic material, there are the following differences from Embodiment 9: the metal core pillar 2.1 in Embodiment 9 is a prefabricated structure, while the metal core pillar 2.1 in Embodiment 10 needs to be manufactured during the preparation process. Figure 8 As shown, the specific preparation method of Example 10 is as follows:

[0101] A1. Preparation of carrier board 7: Prepare a carrier board 7, which is made of copper plate, aluminum plate or ceramic substrate, etc., to meet the requirements of plastic packaging process;

[0102] A2. Production of guide pillar 2 assembly: forming a plastic package body with a certain thickness by plastic packaging on the carrier plate 7, or forming a plurality of truncated cone array pillars with the same height by injection molding on the carrier plate 7;

[0103] A3. Using laser ablation technology to accurately ablate or carve the plastic package or the truncated cone array column to obtain a plurality of plastic core columns of set size and spacing and form a plastic core column array;

[0104] A4. Diameter adjustment of the guide column 2: If the diameter of the plastic core column 2.2 is small, a metal thickening layer 5 can be formed on the outer wall of the plastic core column 2.2 by electroplating or chemical plating.

[0105] A5. Plastic sealing: The guide pillars 1 with adjusted dimensions are plastic sealed to form a plastic sealing integrated platform 1 on all the guide pillars 2. The plastic sealing integrated platform 1 can be plastic sealed with plastic sealing adhesive material. The plastic sealing integrated platform 1 can also be plastic sealed with bottom filling UF material as required to obtain a structural combination with an optimal linear expansion coefficient CTE, or it can be made of insulating glass or ceramics;

[0106] A6, flat grinding: remove the carrier plate 7 by grinding and flatten the end surface of the guide pillar 2 until the cross section of the guide pillar 2 is exposed;

[0107] A7, electroplating nickel and solder: electroplating nickel on the cross section of the guide pillar 2 to form an electroplated nickel layer 3, and then electroplating solder on the electroplated nickel layer 3 to form a solder layer 4; it should be noted that electroplating can be performed on one side or on both sides as required, and correspondingly, step A7 includes step A7.1 of forming the electroplated nickel layer 3 and the solder layer 4 only on one end face of the guide pillar 2 and step A7.2 of forming the electroplated nickel layer 3 and the solder layer 4 on both end faces of the guide pillar 2;

[0108] A8, reflow soldering process: forming a bump structure 6 on the solder layer 4 by a reflow soldering process. It should be noted that, corresponding to steps A7.1 and A7.2, step A8 includes step A8.1 of forming the bump structure 6 only at one end of the guide pillar 2 and step A8.2 of forming the bump structure 6 at both ends of the guide pillar 2;

[0109] A9, height margin processing: non-contact unidirectional laser ablation or bidirectional laser ablation is performed on the plastic package integrated platform 1 by laser process to expose a certain length of guide pillar 2 to be compatible with the packaging process UF or molding requirements. It should be noted that, according to the selection of unidirectional laser ablation or bidirectional laser ablation, corresponding to step A8.1, step A9 includes steps A9.1 and A9.3 of performing unidirectional laser ablation or bidirectional laser ablation on the structure in step A8.1 respectively; corresponding to step A8.2, step A9 includes A9.2 and A9.4 of performing unidirectional laser ablation or bidirectional laser ablation on the structure in A8.2 respectively;

[0110] A10, cutting: separate the single array column structure by cutting process. Use mechanical cutting process or laser cutting process to separate the guide column array to obtain a single integrated guide column structure. It should be noted that, corresponding to step A9.1, step A9.2, step A9.3 and step A9.4, step A10 forms four plastic core column array structures of A10.1, A10.2, A10.3 and A10.4 respectively.

[0111] It can be seen that four plastic core column array structures are obtained in Example 10, such as Figure 9-12 As shown, there are respectively an array column structure of unidirectional laser ablation of a single-sided electric welding layer, an array column structure of bidirectional laser ablation of a single-sided electric welding layer, an array column structure of unidirectional laser ablation of a double-sided electric welding layer, and an array column structure of bidirectional laser ablation of a double-sided electric welding layer. For example, Fig.13 The metal thickening layer 5 on the outside of the plastic core column 2.2 can be clearly seen, and the other array column structures are the same.

[0112] In summary, the four guide pillar array structures in Embodiment 9 and Embodiment 10 differ not only in the number of electroplating layers, but also in the materials of the plastic package integrated platform 1 and the positions of the plastic package integrated platform 1. Taking the upper end surface and the lower end surface of the array pillar assembly as reference surfaces, the different positions are reflected as follows:

[0113] In the array column structure with unidirectional laser ablation of the single-sided electric welding layer and the array column structure with unidirectional laser ablation of the double-sided electric welding layer, the lower surface of the plastic package integrated platform 1 is flush with the lower end surface of the array column assembly, so that the guide column 2 is exposed on one side of the plastic package integrated platform 1. A certain distance h1 is set between the upper surface of the plastic package integrated platform 1 and the upper end surface of the array column assembly, and the distance h1 is greater than 0. The distance h1 is achieved by controlling the ablation height during the laser ablation process as required.

[0114] In the array column structure with bidirectional laser ablation of the single-sided electric welding layer and the array column structure with bidirectional laser ablation of the double-sided electric welding layer, a certain spacing h2 is set between the upper surface of the plastic-encapsulated integrated platform 1 and the upper end surface of the array column assembly, and a certain spacing h3 is set between the lower surface of the plastic-encapsulated integrated platform 1 and the lower end surface of the array column assembly. The spacing h3 and the spacing h2 are greater than 0, and the spacing h3 and the spacing h2 are less than the spacing h1, so that the guide column 2 is exposed on both sides of the plastic-encapsulated integrated platform 1. Optimally, the spacing h3 and the spacing h2 can be equal so that the plastic-encapsulated integrated platform 1 is in the middle.

[0115] In addition, the utility model also proposes the application of the array column structure in the packaging structure, as follows:

[0116] like Fig.14 It is a schematic diagram of a metal core metal column array in a fan-out package, that is, the array column structure with bidirectional laser ablation of a single-sided solder layer in Example 9 is applied to a fan-out package, that is, a full fan-out vertical stacking package with metal columns raised.

[0117] like Fig.15 Schematic diagram of a metal core metal column array in a through-plastic via POP, that is, the array column structure of the single-sided electric welding layer bidirectional laser ablation in Example 9 is applied to the through-plastic via POP, that is, the metal column through-plastic via vertical stacking package

[0118] like Fig.16 It is a schematic diagram of the metal core metal column array in HB-POP, that is, the array column structure with bidirectional laser ablation of double-sided solder layers in Example 9 is applied to HB-POP, that is, the metal column raises the substrate back and the chip is stacked in the package.

[0119] like Fig.17 It is a schematic diagram of a plastic core metal array column in a fan-out package, that is, the array column structure with bidirectional laser ablation of a single-sided solder layer in Example 10 is applied to a fan-out package, that is, the plastic core metal column raises the full fan-out vertical stacking package.

[0120] like Fig.18 It is a schematic diagram of the plastic core metal array column in the through plastic via POP, that is, the array column structure with bidirectional laser ablation of the single-sided solder layer in Example 10 is applied to the through plastic via POP, that is, the plastic core metal column through plastic via vertical stacking package.

[0121] like Fig.19 It is a schematic diagram of the plastic core metal array column in HB-POP, that is, the array column structure with bidirectional laser ablation of double-sided welding layers in Example 10 is applied to HB-POP, that is, the plastic core metal column raises the substrate back to stack the chip package.

[0122] In the above-mentioned applications, it is precisely because of the addition of the array column structure of the utility model that the connection between layers with other components in the packaging structure can be achieved, and the compactness and strength of the packaging structure can be guaranteed while ensuring the normal use of the packaging structure.

[0123] Finally, it should be noted that the above are only preferred embodiments of the present invention and are not intended to limit the protection scope of the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included in the protection scope of the present invention.

Claims

1. An array column structure for chip packaging, characterized in that: It comprises a plastic-encapsulated integrated platform and an array column assembly embedded in the plastic-encapsulated integrated platform, wherein the array column assembly comprises a plurality of guide columns, and at least one end of the guide column is provided with an electroplating layer; the lower surface of the plastic-encapsulated integrated platform is arranged flush with the lower end surface of the array column assembly, and the spacing between the upper surface of the plastic-encapsulated integrated platform and the upper end surface of the array column assembly is h1; or, the spacing between the upper surface of the plastic-encapsulated integrated platform and the upper end surface of the array column assembly is h2, and the spacing between the lower surface of the plastic-encapsulated integrated platform and the lower end surface of the array column assembly is h3; wherein, h1>0, h2>0, h3>0, h1>h2, h1>h3.

2. The chip packaging array column structure according to claim 1, characterized in that: The plastic sealing integrated platform is made of plastic sealing glue, UF glue, insulating glass or ceramics.

3. The chip packaging array column structure according to claim 1, characterized in that: The guide pillar comprises a metal core pillar, which is made of a metal material; or, the guide pillar comprises a plastic core pillar, which is made of an organic material.

4. The chip packaging array column structure according to claim 3, characterized in that: A metal thickening layer is formed on the outer wall of the metal core column or the plastic core column.

5. The chip packaging array pillar structure according to claim 1, characterized in that: The outer wall of the guide post may be chemically etched to reduce the diameter of the guide post.

6. The chip packaging array column structure according to claim 1, characterized in that: Both ends of the guide pillar are provided with electroplating layers.

7. The chip packaging array pillar structure according to claim 1 or 6, characterized in that: The electroplated layer includes an electroplated nickel layer, and the electroplated nickel layer is electroplated on the end surface of the guide column.

8. The chip packaging array pillar structure according to claim 7, characterized in that: The electroplated layer also includes a solder layer or a gold-plated layer, and the solder layer or the gold-plated layer is welded on the electroplated nickel layer.

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