Atomic layer deposition equipment and cavity device thereof

Abstract

The utility model discloses atomic layer deposition equipment and a cavity device thereof. A deposition cavity of the cavity device is provided with an inner cavity and an opening; the rotary carrying table is rotatably arranged in the deposition cavity, and the rotary carrying table is used for carrying a substrate; the upper cover is arranged at the opening of the deposition cavity; the isolation assembly is at least partially arranged on the lower surface, facing the rotary carrying table, of the upper cover so that the deposition cavity can be sequentially divided into a first deposition area, a first transition area, a second deposition area and a second transition area in the rotation direction of the rotary carrying table. The first source supply assembly is at least partially arranged on the lower surface of the upper cover and corresponds to the first deposition area; the second source supply assembly is at least partially arranged on the lower surface of the upper cover and corresponds to the second deposition area. The first deposition area, the first transition area, the second deposition area and the second transition area which are isolated from one another can be formed in the cavity device.

Description

Technical Field

[0001] The utility model relates to the technical field of atomic layer deposition chambers, in particular to an atomic layer deposition device and a chamber device thereof. Background Art

[0002] Atomic layer deposition (ALD) technology has the advantages of good deposition uniformity, high step coverage, precise and controllable deposition thickness, high film quality and few impurities. It is widely used in the manufacturing of electronic devices and optical components.

[0003] In the traditional ALD process, different source gases are alternately introduced into the reaction chamber to react chemically with the substrate surface, and inert gases are used to remove excess reactants and by-products after each step, thereby achieving layer-by-layer deposition of single atomic layers.

[0004] However, when processing single or batch substrates, traditional time-based ALD technology must strictly follow each step of the ALD reaction, and each step requires a specific dwell time. This results in a long time-consuming and high energy consumption to reach the required film thickness, and a slow production rate, making it difficult to meet the growing production needs and cost control requirements.

[0005] In order to overcome these challenges, Spatial Atomic Layer Deposition (SALD) technology came into being. SALD technology achieves higher film formation rate and faster film thickness forming through spatial separation, significantly improving production efficiency and reducing costs. In the SALD process, in order to avoid mutual influence between reaction sources and oxidation sources, existing equipment uses inert gas isolation technology, that is, inert gas is set between adjacent sources to form a single-layer gas isolation barrier to isolate reaction sources and oxidation sources, prevent them from unnecessary chemical reactions and deposition in non-reaction areas, and ensure efficient atomic layer deposition in required reaction areas.

[0006] However, in practical applications, due to the diffusion characteristics of the source gas, a single-layer gas isolation barrier often cannot completely isolate the reaction source and the oxidation source, causing the source to escape or diffuse to other source areas, and then unexpected chemical reactions and depositions occur, which not only affects the quality of the ALD film layer, but also destroys the environment of the reaction chamber, further affecting the uniformity and stability of the film layer. In addition, in the actual operation process, the deposition process usually involves evaporating or sputtering the precursor material under a high energy source, and the particles move toward the substrate and deposit on the substrate surface to form a coating. At this time, heat is generated, causing the temperature of the substrate and the deposited layer to rise. In some cases, in order to control the structure and properties of the deposited layer, the substrate needs to be temperature controlled. For example, if the deposited layer needs to form a specific crystal structure or phase at a lower temperature, the substrate needs to be cooled. On the contrary, if the deposited layer needs to be formed at a higher temperature, the substrate needs to be heated. Therefore, whether it is necessary to stand and cool or heat up depends on the specific deposition process and material requirements. Therefore, after the previous deposition step is completed, it is necessary to determine whether the substrate needs to be controlled to increase or decrease the temperature according to the process and material properties of the next deposition step. It should be emphasized that temperature changes may affect the structure and properties of the deposited layer. When performing temperature control, the temperature change range and rate need to be strictly controlled to ensure the quality and performance of the deposited layer. Since the chamber of the existing space atomic layer deposition equipment only has a reaction source deposition area and an oxidation source deposition area, when the temperature of the substrate needs to be pre-controlled, the rotation of the rotating stage needs to be stopped, which increases the operating frequency and reduces the degree of automation.

[0007] Therefore, the present application proposes an atomic layer deposition device and a chamber device thereof. Utility Model Content

[0008] In order to solve at least one of the above problems, the purpose of the present utility model is to provide an atomic layer deposition device and a chamber device thereof, which are used to form a first deposition area, a first transition area, a second deposition area, and a second transition area that are isolated from each other along the rotation direction of the rotating stage in the chamber device.

[0009] The purpose of the utility model is achieved by the following technical solutions:

[0010] The utility model provides a cavity device of an atomic layer deposition device, comprising:

[0011] A deposition chamber, wherein the deposition chamber has an inner cavity and an opening;

[0012] A rotating stage, the rotating stage is rotatably disposed in the deposition chamber, and the rotating stage is used to carry a substrate;

[0013] An upper cover, the upper cover being arranged at the opening of the deposition chamber;

[0014] An isolation component, wherein the isolation component is at least partially disposed on the lower surface of the upper cover facing the rotating stage, so as to divide the deposition chamber into a first deposition area, a first transition area, a second deposition area, and a second transition area in sequence along the rotation direction of the rotating stage;

[0015] a first source supply assembly, the first source supply assembly being at least partially disposed on a lower surface of the upper cover and corresponding to the first deposition area;

[0016] A second source supply component is at least partially disposed on the lower surface of the upper cover and corresponds to the second deposition area.

[0017] Further, the first source supply component includes:

[0018] a first source inlet, wherein the first source inlet is disposed on the upper cover;

[0019] A plurality of first source transmission channels are spaced apart on the lower surface of the upper cover and correspond to the first deposition area, each of the first source transmission channels is connected to the first source inlet and has a plurality of first source outlets, and each of the first source outlets faces the rotating stage.

[0020] Further, the second source supply component includes:

[0021] a second source inlet, the second source inlet being arranged on the upper cover;

[0022] A plurality of second source transmission channels are spaced apart on the lower surface of the upper cover and correspond to the second deposition area, each of the second source transmission channels is connected to the second source inlet and has a plurality of second source outlets, and each of the second source outlets faces the rotating stage.

[0023] Furthermore, the isolation component includes:

[0024] a first inert gas inlet, wherein the first inert gas inlet is arranged on the upper cover;

[0025] The first inert gas transmission channel and the second inert gas transmission channel are cross-arranged in an X shape, each inert gas transmission channel is connected to the first inert gas inlet and has a plurality of first inert gas outlets, and each of the first inert gas outlets faces the rotating stage.

[0026] Furthermore, the isolation component includes:

[0027] A first baffle and a second baffle are cross-arranged in an X shape, wherein a first side of each baffle is mounted on the upper cover, and a second side of each baffle opposite to the first side is suspended on the rotating platform;

[0028] a second inert gas inlet;

[0029] a third inert gas transmission channel and a fourth inert gas transmission channel, wherein the third inert gas transmission channel is arranged directly below the first baffle plate, and the fourth inert gas transmission channel is arranged directly below the second baffle plate, each inert gas transmission channel is connected to the second inert gas inlet and has a plurality of fourth inert gas outlets, and each of the fourth inert gas outlets faces the rotating stage.

[0030] Further, both ends of the third inert gas transmission channel and the fourth inert gas transmission channel are installed on the side wall of the deposition chamber, and both are provided with a plurality of second inert gas outlets;

[0031] The second inert gas outlets of the third inert gas transmission channel are all directly facing the second side of the first baffle;

[0032] The second inert gas outlets of the fourth inert gas transmission channels are all directly opposite to the second side of the second baffle.

[0033] Furthermore, the isolation component also includes:

[0034] a third inert gas inlet, the third inert gas inlet being arranged on the upper cover;

[0035] A fifth inert gas transmission channel is provided on the lower surface of the upper cover and has two sides respectively located in the first transition region and the second transition region, the fifth inert gas transmission channel is connected to the third inert gas inlet and has a plurality of third inert gas outlets, each of the third inert gas outlets faces the rotating stage.

[0036] Furthermore, the distance between the first baffle and the rotating platform is 3-6 mm, and the distance between the second baffle and the rotating platform is 3-6 mm.

[0037] Further, the deposition chamber is cylindrical;

[0038] The first source supply assembly and the second source supply assembly are used to supply different deposition sources.

[0039] Furthermore, a reaction tank for carrying the substrate is provided in a non-central area of ​​the rotating stage;

[0040] The ratio of the central angles of the first deposition area, the first transition area, the second deposition area, and the second transition area is the same as the ratio of the time the reaction tank stays in each area.

[0041] On the other hand, the utility model provides an atomic layer deposition device, comprising the above-mentioned chamber device.

[0042] Compared with the prior art, the beneficial effects of the present invention include at least:

[0043] The utility model can divide the deposition chamber into a first deposition area, a first transition area, a second deposition area, and a second transition area in sequence along the rotation direction of the rotating stage, and can provide a working area for the substrate when temperature pre-control is performed, so as to reduce the operating frequency of the equipment and improve the degree of automation; furthermore, the first deposition area, the first transition area, the second deposition area, and the second transition area are independent of each other and do not interfere with each other, and can effectively reduce or avoid the diffusion of the source gas. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Figure 1 It is a schematic diagram of the exploded structure of the chamber device of the atomic layer deposition equipment of the embodiment of the utility model.

[0045] Figure 2 It is a structural schematic diagram of the upper cover and the isolation assembly of an embodiment of the utility model.

[0046] Figure 3 This is another structural schematic diagram of the upper cover and the isolation assembly of an embodiment of the utility model.

[0047] Figure 4 It is another structural schematic diagram of the deposition chamber and isolation assembly of an embodiment of the utility model.

[0048] Figure 5 This is another structural schematic diagram of the upper cover and the isolation assembly of an embodiment of the utility model.

[0049] Figure 6 This is another schematic cross-sectional structure diagram of the chamber device of the atomic layer deposition equipment according to an embodiment of the utility model.

[0050] In the figure: 1, upper cover; 11, panel; 2, deposition chamber; 20, rotating stage; 201, reaction tank; 21, first deposition area; 22, first transition area; 23, second deposition area; 24, second transition area; 25, mounting part; 31, first source inlet; 32, first source transmission channel; 321, first source outlet; 41, second source inlet; 42, second source transmission channel; 421, second source outlet; 510, first inert gas outlet; 511 first inert gas inlet; 512, first inert gas transmission channel; 513, second inert gas transmission channel; 520, second inert gas outlet; 522, third inert gas transmission channel; 523, fourth inert gas transmission channel; 524, first baffle; 525, second baffle; 530, third inert gas outlet; 532, fifth inert gas transmission channel. DETAILED DESCRIPTION

[0051] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in a variety of forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided to make the present invention more comprehensive and complete and to fully convey the concepts of example embodiments to those skilled in the art. The same reference numerals in the figures represent the same or similar structures, and thus their repeated description will be omitted.

[0052] The words expressing positions and directions described in the present utility model are all explained by taking the drawings as examples, but they can be changed as needed, and all the changes are included in the protection scope of the present utility model.

[0053] In order to provide a working area for a substrate during temperature pre-control to improve the automation of the equipment, and to effectively reduce or avoid the diffusion of source gas to improve the deposition rate of the deposition process, the utility model provides an atomic layer deposition equipment and a chamber device thereof.

[0054] The chamber device of the atomic layer deposition equipment of the present invention includes: a deposition chamber 2, a rotating stage 20, an upper cover 1, an isolation component, a first source supply component, and a second source supply component, so as to form a first deposition area 21, a first transition area 22, a second deposition area 23 and a second transition area 24 that are independent of each other and do not interfere with each other in the chamber device along the rotation direction of the rotating stage 20.

[0055] refer to Figure 1The deposition chamber 2 of the utility model is cylindrical with a bottom outer diameter of 800 mm, an inner cavity diameter slightly larger than 500 mm, and a height of 300 mm, and has a cylindrical inner cavity and a circular opening. An upper cover 1 is provided at the opening, and the upper cover 1 includes an upper surface and a lower surface arranged opposite to each other, the upper surface of the upper cover 1 faces the external environment, and the lower surface of the upper cover 1 faces the rotating stage 20. The rotating stage 20 for carrying the substrate is rotatably arranged at the bottom of the inner cavity. When used, a motor is provided to drive the rotating stage 20 to rotate clockwise or counterclockwise. The specific method can adopt known technologies, which will not be described in detail here. Furthermore, the rotating stage 20 is a cylinder with a diameter of 500 mm and a height of 100 mm. A reaction groove 201 for carrying a substrate is provided in a non-central area of ​​the upper surface of the rotating stage 20. After the substrate is placed in the reaction groove 201, the highest point of the substrate is lower than the surface height of the rotating stage 20, so as to ensure that the substrate in the reaction groove 201 can rotate with the rotation of the rotating stage 20, and when the substrate rotates with the rotation of the rotating stage 20, it is not blocked by other structures or affected by other friction. The non-central area of ​​the rotating stage 20 refers to the area other than the center point or the rotation axis of the rotating stage 20, so that the rotating stage 20 drives the substrate to move along a circular route, so that the rotating stage 20 can be completely located in any area of ​​the first deposition area 21, the first transition area 22, the second deposition area 23 and the second transition area 24.

[0056] The isolation assembly of the utility model is at least partially arranged on the lower surface of the upper cover 1, so as to divide the deposition chamber 2 into a first deposition area 21, a first transition area 22, a second deposition area 23, and a second transition area 24 which are independent of each other and do not interfere with each other in sequence along the rotation direction of the rotating stage 20. Figure 3 and Figure 4 Furthermore, the first source supply assembly is at least partially disposed on the lower surface of the upper cover 1 and corresponds to the first deposition area 21 , and the second source supply assembly is at least partially disposed on the lower surface of the upper cover 1 and corresponds to the second deposition area 23 .

[0057] In application, when the substrate rotates with the rotation of the rotating stage 20, the substrate passes through the first deposition area 21, the first transition area 22, the second deposition area 23 and the second transition area 24 in sequence, and the first deposition reaction occurs in the first deposition area 21, the first transition area 22 is cooled or heated, the second deposition reaction occurs in the second deposition area 23, and the second transition area 24 is cooled or heated. In actual application, the sum of the central angles of the first deposition area 21, the first transition area 22, the second deposition area 23 and the second transition area 24 is 360°, and the ratio of the central angles of the first deposition area 21, the first transition area 22, the second deposition area 23 and the second transition area 24 is the same as the ratio of the time the substrate stays in each area in the reaction tank 201. In some preferred embodiments, the central angles of the first deposition area 21 and the second transition area 24 are both 144°, and the central angles of the first transition area 22 and the second transition area 24 are both 36°. The rotation speed of the rotating stage 20 can be controlled in segments according to the time required for each process of the substrate and the size of the central angle of the corresponding area, so that each process of the substrate has sufficient residence time, that is, sufficient deposition time or heating / cooling time, thereby improving the quality of the deposited layer, the deposition rate and the efficiency of the deposition process.

[0058] The isolation components of the present utility model include five types. Figure 2 This is a schematic diagram of the first structure of the isolation component of the utility model. Figure 3 This is a schematic diagram of the second structure of the isolation component of the utility model. Figure 4 This is a third structural schematic diagram of the isolation component of the utility model. Figure 5 and Figure 3 The fourth structure constituting the isolation assembly of the utility model is: Figure 5 and Figure 4 This constitutes the fifth structure of the isolation assembly of the utility model.

[0059] refer to Figure 2 The first structure of the isolation assembly of the utility model includes: a first inert gas inlet 511 and a first inert gas transmission channel 512 and a second inert gas transmission channel 513 arranged in an X shape. The intersection of the first inert gas transmission channel 512 and the second inert gas transmission channel 513 connects the first inert gas transmission channel 512 and the second inert gas transmission channel 513.

[0060] The first inert gas inlet 511 is a tubular structure and is disposed on the upper cover 1. Further, one side of the first inert gas inlet 511 is connected to an external inert gas supply device, and the other side of the first inert gas inlet 511 passes through the upper cover 1 from the upper surface of the upper cover 1 and is connected to the intersection of the first inert gas transmission channel 512 and the second inert gas transmission channel 513 to pass the inert gas into the first inert gas transmission channel 512 and the second inert gas transmission channel 513. When used, the inert gas can be nitrogen or helium.

[0061] The first inert gas transmission channel 512 and the second inert gas transmission channel 513 are both installed on the lower surface of the upper cover 1, and are both provided with a plurality of first inert gas outlets 510, each of which faces the rotating stage 20. Further, the length of the first inert gas transmission channel 512 and the second inert gas transmission channel 513 is 480 mm, the width is 7 mm, and the flow rate of the inert gas in each inert gas transmission channel is 8000 SCCM. Furthermore, the plurality of first inert gas outlets 510 are arranged at equal intervals, the interval between two adjacent first inert gas outlets 510 is 150 mm, and each first inert gas outlet 510 is a square structure with a side length of 5 mm. When in use, each first inert gas outlet 510 is provided with a pressurized nozzle. When the inert gas is ejected from each first inert gas outlet 510, two inert gas walls crossing in an X shape are formed to isolate the first deposition area 21, the first transition area 22, the second deposition area 23 and the second transition area 24, thereby obtaining mutually independent first deposition area 21, first transition area 22, second deposition area 23 and second transition area 24, which can effectively prevent the first source from overflowing into the second source supply assembly and the second source from overflowing into the first source supply assembly, thereby ensuring the concentration of the first source in the first source supply assembly and the concentration of the second source in the second source supply assembly, thereby improving the deposition rate.

[0062] refer to Figure 3 The second structure of the isolation assembly of the utility model includes: a first baffle 524 and a second baffle 525 arranged in an X shape, a second inert gas inlet, a third inert gas transmission channel 522 and a fourth inert gas transmission channel 523. The central axes of the first baffle 524 and the second baffle 525 coincide with each other.

[0063] The first baffle 524 and the second baffle 525 are both plate-shaped structures with a thickness of 5 mm, a height of 95 mm, and a length of 500 mm. The first sides of the first baffle 524 and the second baffle 525 are both mounted on the lower surface of the upper cover 1, and the second sides of the first baffle 524 and the second baffle 525 opposite to the first sides are both suspended on the rotating stage 20, and the distance from the rotating stage 20 is 3-6 mm.

[0064] The first side of the third inert gas transmission channel 522 is mounted on a second side of the first baffle 524 facing the rotating stage 20, and a plurality of fourth inert gas outlets are evenly spaced on the second side of the third inert gas transmission channel 522 opposite to the first side. The first side of the fourth inert gas transmission channel 523 is mounted on a second side of the second baffle 525 facing the rotating stage 20, and a plurality of fourth inert gas outlets are evenly spaced on the second side of the third inert gas transmission channel 522 opposite to the first side. Each fourth inert gas outlet faces the rotating stage 20. When used, both ends of the third inert gas transmission channel 522 and the fourth inert gas transmission channel 523 are mounted on the side wall of the deposition chamber 2 through the mounting member 25, and each fourth inert gas outlet faces the rotating stage 20. Further, the geometric centers of the third inert gas transmission channel 522 and the fourth inert gas transmission channel 523 overlap and penetrate, so that the third inert gas transmission channel 522 and the fourth inert gas transmission channel 523 are in a cross X shape.

[0065] One side of the second inert gas inlet of the tubular structure is connected to an external inert gas supply device, and the other side of the second inert gas inlet passes through the upper cover 1 from the upper surface of the upper cover 1 and is connected to the intersection of the third inert gas transmission channel 522 and the fourth inert gas transmission channel 523, so that the inert gas is passed into the third inert gas transmission channel 522 and the fourth inert gas transmission channel 523 and sprayed out from the fourth inert gas outlet, and two inert gas walls crossing in an X shape are formed between the second sides of the first baffle 524 and the second baffle 525 and the rotating stage 20 to make up for the gap between the baffle and the rotating stage 20. The isolation assembly formed by the baffle and the gas wall can better isolate the first deposition area 21, the first transition area 22, the second deposition area 23 and the second transition area 24 to avoid mutual interference between the areas.

[0066] refer to Figure 4 The third structure of the isolation assembly of the utility model includes: a first baffle 524 and a second baffle 525, which are arranged in an X shape, a second inert gas inlet, a third inert gas transmission channel 522, and a fourth inert gas transmission channel 523. The geometric centers of the third inert gas transmission channel 522 and the fourth inert gas transmission channel 523 overlap and penetrate, so that the third inert gas transmission channel 522 and the fourth inert gas transmission channel 523 are in a crossed X shape.

[0067] The difference between the third structure and the second structure lies in the location and structure of the third inert gas transmission channel 522 and the fourth inert gas transmission channel 523 .

[0068] The third inert gas transmission channel 522 is disposed directly below the first baffle 524, and both ends of the third inert gas transmission channel 522 are mounted on the sidewalls of the deposition chamber 2 through mounting members 25. Further, a plurality of second inert gas outlets 520 are evenly spaced apart on a first side of the third inert gas transmission channel 522, and the second inert gas outlets 520 are all facing the second side of the first baffle 524, and a plurality of fourth inert gas outlets are evenly spaced apart on a second side of the third inert gas transmission channel 522 opposite to the first side, and each fourth inert gas outlet faces the rotating stage 20.

[0069] The fourth inert gas transmission channel 523 is disposed directly below the second baffle 525, and both ends of the fourth inert gas transmission channel 523 are mounted on the sidewalls of the deposition chamber 2 through mounting members 25. Further, a first side of the fourth inert gas transmission channel 523 is provided with a plurality of second inert gas outlets 520 at equal intervals, and the second inert gas outlets 520 are all directly facing the second side of the second baffle 525, and a second side of the fourth inert gas transmission channel 523 opposite to the first side is provided with a plurality of fourth inert gas outlets at equal intervals, and each fourth inert gas outlet faces the rotating stage 20.

[0070] The second inert gas inlet of the tubular structure passes the inert gas into the third inert gas transmission channel 522 and the fourth inert gas transmission channel 523 and ejects the inert gas from the second inert gas outlet 520 and the fourth inert gas outlet, forming a group of two inert gas walls crossing in an X shape between the second sides of the first baffle plate 524 and the second baffle plate 525 and the third inert gas transmission channel 522 and the fourth inert gas transmission channel 523, and another group of two inert gas walls crossing in an X shape between the third inert gas transmission channel 522 and the fourth inert gas transmission channel 523 and the rotating stage 20. By using two groups of inert gas walls with opposite wind directions to fill the gap between the baffle plate and the rotating stage 20, it is possible to avoid the reduction of the isolation effect caused by the installation gap between the inert gas transmission channel and the baffle plate, and to better isolate the first deposition area 21, the first transition area 22, the second deposition area 23 and the second transition area 24, thereby avoiding mutual interference between the areas.

[0071] refer to Figure 5 and Figure 3 The fourth structure of the isolation assembly of the utility model includes: a first baffle 524 and a second baffle 525 arranged in an X shape, a second inert gas inlet, a third inert gas transmission channel 522 and a fourth inert gas transmission channel 523, a third inert gas inlet and a fifth inert gas transmission channel 532.

[0072] The fourth structure differs from the second structure in that a third inert gas inlet and a fifth inert gas transmission channel 532 are added.

[0073] The fifth inert gas transmission channel 532 is disposed on the lower surface of the upper cover 1, and the two sides are respectively located in the first transition area 22 and the second transition area 24, so as to correspond to the first transition area 22 and the second transition area 24. Further, a plurality of third inert gas outlets 530 are evenly spaced on the fifth inert gas transmission channel 532, and each third inert gas outlet 530 faces the rotating stage 20.

[0074] One side of the third inert gas inlet of the tubular structure is connected to an external inert gas supply device, and the other side of the third inert gas inlet passes through the upper cover 1 from the upper surface of the upper cover 1 and is connected to the fifth inert gas transmission channel 532, so that the inert gas is passed into the fifth inert gas transmission channel 532 and sprayed out from the third inert gas outlet 530, so as to form an inert gas wall between the first baffle 524 and the second baffle 525, and perform secondary physical isolation on the first deposition area 21 and the second deposition area 23, so as to increase the physical isolation effect of the isolation component, and can better isolate the first deposition area 21 and the second deposition area 23, and avoid mutual interference between the deposition areas.

[0075] refer to Figure 5 and Figure 4 The fifth structure of the isolation assembly of the utility model includes: a first baffle 524 and a second baffle 525 arranged in an X shape, a second inert gas inlet, a third inert gas transmission channel 522 and a fourth inert gas transmission channel 523, a third inert gas inlet and a fifth inert gas transmission channel 532.

[0076] The difference between the fifth structure and the third structure is that the difference between the fourth structure and the second structure is applied to the third structure. The first source supply assembly and the second source supply assembly of the utility model are used to supply different deposition sources. When used, the first source supply assembly is used to supply the reaction source, and the second source supply assembly is used to supply the oxidation source.

[0077] The first source supply assembly includes: a first source inlet 31 and a plurality of first source transmission channels 32 .

[0078] One side of the first source inlet 31 of the tubular structure is connected to an external first source supply device, and the other side of the first source inlet 31 passes through the upper cover 1 from the upper surface of the upper cover 1 and is connected to each first source transmission channel 32 to pass the first source into the first source transmission channel 32.

[0079] refer to Figure 2, multiple first source transmission channels 32 with a length of 400mm and a width of 5mm are installed at intervals on the lower surface of the upper cover 1 and correspond to the first deposition area 21. When used, each first source transmission channel 32 extends along the radius direction of the upper cover 1, with one end pointing to the center of the circular upper cover 1 and the other end pointing to the edge of the upper cover 1. Further, each first source transmission channel 32 is evenly spaced and provided with multiple first source outlets 321 facing the rotating stage 20, the distance between two adjacent first source outlets 321 is 120mm, and each first source outlet 321 is a square structure with a side length of 3mm. When used, each first inert gas outlet 510 is provided with a pressurized nozzle, and the first source is uniformly sprayed from each first source outlet 321, so that the first source of the first deposition area 21 can be evenly distributed, so that the substrate in the reaction tank 201 can fully contact with the first source when the rotating stage 20 enters the first deposition area 21 and leaves the first deposition area 21, forming a deposition layer with uniform texture.

[0080] The second source supply assembly includes: a second source inlet 41 and a plurality of second source transmission channels 42 .

[0081] One side of the second source inlet 41 of the tubular structure is connected to an external second source supply device, and the other side of the second source inlet 41 passes through the upper cover 1 from the upper surface of the upper cover 1 and is connected to each second source transmission channel 42 to pass the second source into the second source transmission channel 42.

[0082] refer to Figure 2 , multiple second source transmission channels 42 with a length of 400mm and a width of 5mm are installed at intervals on the lower surface of the upper cover 1 and correspond to the second deposition area 23. When used, each second source transmission channel 42 extends along the radius direction of the upper cover 1, with one end pointing to the center of the circular upper cover 1 and the other end pointing to the edge of the upper cover 1. Further, each second source transmission channel 42 is evenly spaced and provided with multiple second source outlets 421 facing the rotating stage 20, the distance between two adjacent second source outlets 421 is 120mm, and each second source outlet 421 is a square structure with a side length of 3mm. When used, each second inert gas outlet 520 is provided with a pressurized nozzle, and the second source is uniformly sprayed from each second source outlet 421, so that the second source of the second deposition area 23 can be evenly distributed, so that the substrate in the reaction tank 201 can fully contact with the first source when the rotating stage 20 enters the second deposition area 23 and leaves the second deposition area 23, forming a deposition layer with uniform texture.

[0083] refer to Figure 1 and Figure 6, a cylindrical panel 11 that passes through from top to bottom can be set on the periphery of the upper cover 1 to block the overflow of the first source, the second source and the inert gas, which can not only improve the utilization rate of the material, but also avoid environmental pollution. When applied, the diameter of the panel 11 is 500mm and the height is 100mm. When applied, in order to enable the atomic layer deposition equipment to have a working area that provides substrate temperature pre-control, and to effectively reduce or avoid the diffusion of the source gas, and to improve the deposition rate of the deposition process, the above-mentioned cavity device is applied to the atomic layer deposition equipment. In summary, the utility model can divide the deposition chamber 2 into a first deposition area 21, a first transition area 22, a second deposition area 23, and a second transition area 24 along the rotation direction of the rotating stage 20, and the first deposition area 21, the first transition area 22, the second deposition area 23, and the second transition area 24 are independent of each other and do not interfere with each other. It can not only improve the quality of the product but also improve the efficiency of the deposition process.

[0084] By setting up an isolation component, the first source can be prevented from overflowing into the second source supply component, and the second source can be prevented from overflowing into the first source supply component, so as to ensure the concentration of the first source in the first source supply component and the concentration of the second source in the second source supply component, thereby improving the deposition rate.

[0085] By adding the first source transmission channel 32 and the second source transmission channel 42, the deposition rate of the substrate can be higher and the deposition layer can be more uniform. Although the embodiments of the utility model have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations of the utility model. Ordinary technicians in this field can change, modify, replace and modify the above embodiments within the scope of the utility model without departing from the principles and purpose of the utility model, and all these changes should fall within the scope of protection of the claims of the utility model.

Claims

1. A chamber device for an atomic layer deposition device, characterized in that: include: A deposition chamber (2), wherein the deposition chamber (2) has an inner cavity and an opening; A rotating stage (20), the rotating stage (20) being rotatably arranged in the deposition chamber (2), the rotating stage (20) being used to carry a substrate; An upper cover (1), the upper cover (1) being arranged at the opening of the deposition chamber (2); an isolation component, the isolation component being at least partially arranged on a lower surface of the upper cover (1) facing the rotating stage (20) so as to divide the deposition chamber (2) into a first deposition area (21), a first transition area (22), a second deposition area (23), and a second transition area (24) in sequence along the rotation direction of the rotating stage (20); A first source supply component, the first source supply component being at least partially disposed on the lower surface of the upper cover (1) and corresponding to the first deposition area (21); A second source supply component, the second source supply component is at least partially arranged on the lower surface of the upper cover (1) and corresponds to the second deposition area (23).

2. The cavity device according to claim 1, characterized in that: The first source supply component comprises: A first source inlet (31), wherein the first source inlet (31) is arranged on the upper cover (1); a plurality of first source transmission channels (32), the plurality of first source transmission channels (32) being distributed at intervals on the lower surface of the upper cover (1) and corresponding to the first deposition area (21), each of the first source transmission channels (32) being connected to the first source inlet (31) and having a plurality of first source outlets (321), each of the first source outlets (321) being oriented toward the rotating stage (20); and / or, The second source supply component comprises: A second source inlet (41), the second source inlet (41) being arranged on the upper cover (1); A plurality of second source transmission channels (42), wherein the plurality of second source transmission channels (42) are distributed at intervals on the lower surface of the upper cover (1) and correspond to the second deposition area (23), each of the second source transmission channels (42) is connected to the second source inlet (41) and is provided with a plurality of second source outlets (421), and each of the second source outlets (421) faces the rotating stage (20).

3. The cavity device according to claim 1, characterized in that: The isolation assembly comprises: a first inert gas inlet (511), the first inert gas inlet (511) being arranged on the upper cover (1); A first inert gas transmission channel (512) and a second inert gas transmission channel (513) are arranged crosswise in an X shape, each inert gas transmission channel is connected to the first inert gas inlet (511) and is provided with a plurality of first inert gas outlets (510), each of the first inert gas outlets (510) facing the rotating stage (20).

4. The cavity device according to claim 1, characterized in that: The isolation assembly comprises: a first baffle (524) and a second baffle (525) arranged crosswise in an X shape, wherein a first side of each baffle is mounted on the upper cover (1), and a second side of each baffle, opposite to the first side, is suspended on the rotating platform (20); A second inert gas inlet; A third inert gas transmission channel (522) and a fourth inert gas transmission channel (523), wherein the third inert gas transmission channel (522) is arranged directly below the first baffle plate (524), and the fourth inert gas transmission channel (523) is arranged directly below the second baffle plate (525), each inert gas transmission channel is connected to the second inert gas inlet and has a plurality of fourth inert gas outlets, and each of the fourth inert gas outlets faces the rotating stage (20).

5. The cavity device according to claim 4, characterized in that: Both ends of the third inert gas transmission channel (522) and the fourth inert gas transmission channel (523) are mounted on the side wall of the deposition chamber (2), and are each provided with a plurality of second inert gas outlets (520); The second inert gas outlets (520) of the third inert gas transmission channels (522) are all directly opposite to the second side of the first baffle (524); The second inert gas outlets (520) of the fourth inert gas transmission channels (523) are all directly opposite to the second side of the second baffle (525).

6. The cavity device according to claim 4, characterized in that: The isolation assembly further comprises: a third inert gas inlet, the third inert gas inlet being arranged on the upper cover (1); A fifth inert gas transmission channel (532), the fifth inert gas transmission channel (532) being arranged on the lower surface of the upper cover (1) and having two sides respectively located in the first transition area (22) and the second transition area (24), the fifth inert gas transmission channel (532) being connected to the third inert gas inlet and having a plurality of third inert gas outlets (530), each of the third inert gas outlets (530) facing the rotating stage (20).

7. The cavity device according to claim 4, characterized in that: The distance between the first baffle plate (524) and the rotating platform (20) is 3-6 mm, and the distance between the second baffle plate (525) and the rotating platform (20) is 3-6 mm.

8. The cavity device according to claim 1, characterized in that: The deposition chamber (2) is cylindrical; The first source supply assembly and the second source supply assembly are used to supply different deposition sources.

9. The cavity device according to claim 1, characterized in that: A reaction groove (201) for carrying a substrate is provided in a non-central area of ​​the rotating stage (20); The ratio of the central angles of the first deposition area (21), the first transition area (22), the second deposition area (23), and the second transition area (24) is the same as the ratio of the time the reaction tank (201) stays in each area.

10. An atomic layer deposition device, characterized in that: A cavity device comprising any one of claims 1-9.

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