ICP (Inductively Coupled Plasma) etching device for semiconductor manufacturing

Abstract

The utility model discloses an ICP plasma etching device for semiconductor manufacturing, and relates to the technical field of semiconductor manufacturing, the ICP plasma etching device comprises a plasma etching box body and a cleaning assembly, the inner wall of the top of the plasma etching box body is provided with an air supply pipe, the inner wall of the bottom of the plasma etching box body is fixedly connected with a lifting frame, and the bottom of the lifting frame is fixedly connected with the cleaning assembly. The sweeping assembly used for sweeping is arranged on the outer wall of the bottom of the supporting table. According to the ICP plasma etching device for semiconductor manufacturing, the bottom of the plasma etching box body can be cleaned by the bottom of the cleaning brush, and garbage and impurities are discharged through the outer wall of the right lower side of the plasma etching box body, so that reaction products of raw material etching processing can be discharged in time without hindering the proceeding of a new reaction; and when the first clamping plate and the second clamping plate are close to each other, the to-be-processed raw materials at the top are limited, so that enclosure limiting from the side face and the bottom is achieved, and displacement, collision and fragmentation of the raw materials in the processing process are prevented.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor manufacturing, in particular to an ICP plasma etching device used for semiconductor manufacturing. Background Art

[0002] Plasma etcher, also known as plasma etcher, plasma plane etcher, plasma etcher, plasma surface treatment instrument, plasma cleaning system, etc., is the most common form of dry etching. Its principle is that the gas exposed to the electron area forms plasma, and the resulting ionized gas and the gas composed of released high-energy electrons form plasma or ions. When the ionized gas atoms are accelerated by the electric field, they will release enough force to tightly bond the material with the surface expulsion force or etch the surface.

[0003] Existing ICP plasma etching devices used in semiconductor manufacturing are usually not convenient for limiting the raw materials to be processed during use, which causes the raw materials to be processed to fly out during the processing, causing collisions and damage, and the reaction products of the raw materials cannot be discharged in time, hindering new reactions and thus affecting their reaction rate.

[0004] Therefore, in view of this, the existing structure and defects are studied and improved, and an ICP plasma etching device for semiconductor manufacturing is proposed. Utility Model Content

[0005] The purpose of the utility model is to provide an ICP plasma etching device for semiconductor manufacturing to solve the problems raised in the above background technology.

[0006] To achieve the above-mentioned purpose, the utility model provides the following technical solutions: an ICP plasma etching device for semiconductor manufacturing, comprising a plasma etching box and a cleaning component, the top inner wall of the plasma etching box is provided with an air supply pipe, and the bottom outer wall of the air supply pipe is connected to a processing air outlet, the bottom inner wall of the plasma etching box is fixedly connected to a lifting frame, and the top outer wall of the lifting frame is fixedly connected to a support table, the cleaning component for cleaning is arranged on the bottom outer wall of the support table, and the cleaning component comprises a first motor, a rotating gear and a cleaning brush, the bottom outer wall of the first motor is connected to the rotating gear, and the outer wall of the rotating gear is meshingly connected to the cleaning brush.

[0007] Furthermore, the cleaning brush is slidably connected to the outer wall of the lifting frame, and the cleaning brush is in a circular ring shape.

[0008] Furthermore, the vertical center axis of the plasma etching box is consistent with the vertical center axis of the cleaning brush, and the lifting frame is cylindrical.

[0009] Furthermore, a limiting assembly for limiting positioning is disposed on the top outer wall of the support platform, and the limiting assembly includes a second motor and a rotating screw, and the end of the second motor is connected to the rotating screw.

[0010] Furthermore, the limiting assembly also includes a transmission belt, a first clamping plate and a second clamping plate. The outer wall of the end of the second motor is meshedly connected with the transmission belt, and the outer wall of the rotating screw is connected with the first clamping plate and the second clamping plate.

[0011] Furthermore, the limiting assembly also includes a first enclosing plate and a first slide plate, the outer wall of the second clamping plate is provided with a second clamping plate, and the interior of the first enclosing plate is slidably connected to the first slide plate.

[0012] Furthermore, the limiting assembly also includes a second enclosure and a second slide plate. The outer wall of the second clamping plate is provided with the second enclosure, and the interior of the second enclosure is slidably connected to the second slide plate.

[0013] Furthermore, the side outer walls of the first clamping plate and the second clamping plate are connected via a first enclosure plate and a first slide plate, and the bottom outer walls of the first clamping plate and the second clamping plate are connected via a second enclosure plate and a second slide plate.

[0014] The utility model provides an ICP plasma etching device for semiconductor manufacturing, which has the following beneficial effects:

[0015] 1. In the ICP plasma etching device for semiconductor manufacturing, the bottom end of the first motor drives the rotating gear to rotate, and the rotation of the rotating gear drives the cleaning brush to rotate around the outer wall of the lifting frame. The bottom of the cleaning brush can clean the bottom of the plasma etching box, and the garbage impurities are discharged through the lower right outer wall of the plasma etching box, so that the reaction products of the raw material etching processing can be discharged in time, will not hinder the new reaction, and reduce the impact on the reaction efficiency.

[0016] 2. In the ICP plasma etching device used for semiconductor manufacturing, the rotation of the rotating screw drives the first clamping plate and the second clamping plate to move in opposite directions. When the first clamping plate and the second clamping plate are close to each other, the top of the raw material to be processed can be limited, and the first slide plate can slide inside the first enclosure plate, and the second slide plate can slide inside the second enclosure plate, thereby realizing the enclosure and limitation of the raw material to be processed from the side and bottom, preventing the displacement of the raw material during the processing, and causing bumps and breakage. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 This is a schematic diagram of the front view structure of an alarm instrument body of an ICP plasma etching device for semiconductor manufacturing according to the utility model;

[0018] Figure 2 This is a schematic diagram of the structure of a spring wire of an ICP plasma etching device for semiconductor manufacturing when stretched according to the utility model;

[0019] Figure 3 The utility model is a schematic diagram of the internal structure of a protective shell of an ICP plasma etching device used in semiconductor manufacturing.

[0020] In the figure: 1. plasma etching box; 2. air supply pipe; 3. processing air outlet; 4. lifting frame; 5. support table; 6. cleaning component; 601. first motor; 602. rotating gear; 603. cleaning brush; 7. limit component; 701. second motor; 702. rotating screw rod; 703. transmission belt; 704. first clamping plate; 705. second clamping plate; 706. first baffle plate; 707. first slide plate; 708. second baffle plate; 709. second slide plate. DETAILED DESCRIPTION

[0021] The following is a further detailed description of the implementation of the present invention in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but cannot be used to limit the scope of the present invention.

[0022] like Figure 1-Figure 3 As shown, an ICP plasma etching device for semiconductor manufacturing includes a plasma etching box 1 and a cleaning component 6, the top inner wall of the plasma etching box 1 is provided with an air supply pipe 2, and the bottom outer wall of the air supply pipe 2 is connected with a processing air port 3, the bottom inner wall of the plasma etching box 1 is fixedly connected with a lifting frame 4, and the top outer wall of the lifting frame 4 is fixedly connected with a supporting platform 5, the cleaning component 6 for cleaning is arranged on the bottom outer wall of the supporting platform 5, and the cleaning component 6 includes a first motor 601, a rotating gear 602 and a cleaning brush 603, the bottom outer wall of the first motor 601 is connected with a rotating gear 602, and the outer wall of the rotating gear 602 is meshingly connected with a cleaning brush 603, the cleaning brush 603 is slidably connected to the outer wall of the lifting frame 4, and the cleaning brush 603 is annular, the vertical center axis of the plasma etching box 1 is consistent with the vertical center axis of the cleaning brush 603, and the lifting frame 4 is cylindrical;

[0023] The specific operation is as follows: the plasma etching box 1 is placed in a horizontal position, and the air enters the plasma etching box 1 through the air supply pipe 2 to etch the raw material through the processing air port 3, and the lifting frame 4 supports the support platform 5;

[0024] Start the first motor 601, the bottom end of the first motor 601 drives the rotating gear 602 to rotate, and the rotation of the rotating gear 602 drives the cleaning brush 603 to rotate around the outer wall of the lifting frame 4, and the bottom of the cleaning brush 603 can clean the bottom of the plasma etching box 1, and the garbage impurities are discharged through the lower right outer wall of the plasma etching box 1, so that the reaction products of the raw material etching processing can be discharged in time, will not hinder the new reaction, and reduce the impact on the reaction efficiency;

[0025] like Figure 1-Figure 3 As shown, the top outer wall of the support platform 5 is provided with a limiting assembly 7 for limiting, and the limiting assembly 7 includes a second motor 701 and a rotating screw 702, the end of the second motor 701 is connected to the rotating screw 702, the limiting assembly 7 also includes a transmission belt 703, a first clamping plate 704 and a second clamping plate 705, the outer wall of the end of the second motor 701 is meshedly connected with the transmission belt 703, the outer wall of the rotating screw 702 is connected to the first clamping plate 704 and the second clamping plate 705, the limiting assembly 7 also includes a first baffle plate 706 and a first slide plate 707, the outer wall of the second clamping plate 705 is provided with A second clamping plate 705 is provided, and a first slide plate 707 is slidably connected inside the first baffle plate 706. The limiting assembly 7 also includes a second baffle plate 708 and a second slide plate 709. The outer wall of the second clamping plate 705 is provided with a second baffle plate 708, and the inner part of the second baffle plate 708 is slidably connected to the second slide plate 709. The side outer walls of the first clamping plate 704 and the second clamping plate 705 are connected by the first baffle plate 706 and the first slide plate 707, and the bottom outer walls of the first clamping plate 704 and the second clamping plate 705 are connected by the second baffle plate 708 and the second slide plate 709.

[0026] The specific operation is as follows: the raw material to be processed is placed between the first clamping plate 704 and the second clamping plate 705, and the second motor 701 is started. The second motor 701 rotates to drive the rotating screw 702 to rotate and the transmission belt 703 to transmit. The rotation of the rotating screw 702 drives the first clamping plate 704 and the second clamping plate 705 to move in opposite directions.

[0027] When the first clamping plate 704 and the second clamping plate 705 are close to each other, the raw materials to be processed on the top can be limited, and the first slide plate 707 can slide inside the first enclosure plate 706, and the second slide plate 709 can slide inside the second enclosure plate 708, so as to realize the enclosure and limitation of the raw materials to be processed from the side and bottom to prevent the displacement of the raw materials during the processing, and prevent bumps and breakage.

[0028] In summary, if Figure 1-Figure 3As shown, the ICP plasma etching device for semiconductor manufacturing, when in use, firstly, the plasma etching box 1 is placed in a horizontal position, and air enters the interior of the plasma etching box 1 through the air supply pipe 2 to etch the raw material to be processed through the processing air port 3, and the first motor 601 is started, and the rotation of the rotating gear 602 drives the cleaning brush 603 to rotate around the outer wall of the lifting frame 4, and the bottom of the cleaning brush 603 can clean the bottom of the plasma etching box 1, and the garbage impurities are discharged through the lower right outer wall of the plasma etching box 1, so that the reaction products of the raw material etching processing can be discharged in time;

[0029] The raw material to be processed is placed between the first clamping plate 704 and the second clamping plate 705, and the second motor 701 is started. The second motor 701 rotates to drive the rotating screw 702 and the transmission belt 703 to rotate. When the first clamping plate 704 and the second clamping plate 705 are close to each other, the raw material to be processed on the top can be limited, and the first slide plate 707 can slide inside the first enclosure plate 706, and the second slide plate 709 can slide inside the second enclosure plate 708, so as to realize the enclosure and limitation of the raw material to be processed from the side and bottom.

[0030] The embodiments of the present invention are provided for the purpose of illustration and description, and are not intended to be exhaustive or to limit the present invention to the disclosed forms. Many modifications and variations will be apparent to those of ordinary skill in the art. The embodiments are selected and described to better illustrate the principles and practical applications of the present invention, and to enable those of ordinary skill in the art to understand the present invention and thereby design various embodiments with various modifications suitable for specific uses.

Claims

1. An ICP plasma etching device for semiconductor manufacturing, comprising a plasma etching box (1) and a cleaning component (6), characterized in that: The top inner wall of the plasma etching box (1) is provided with an air supply pipe (2), and the bottom outer wall of the air supply pipe (2) is connected to a processing air outlet (3); the bottom inner wall of the plasma etching box (1) is fixedly connected to a lifting frame (4), and the top outer wall of the lifting frame (4) is fixedly connected to a support platform (5); the cleaning component (6) for cleaning is arranged on the bottom outer wall of the support platform (5), and the cleaning component (6) comprises a first motor (601), a rotating gear (602) and a cleaning brush (603); the bottom outer wall of the first motor (601) is connected to the rotating gear (602), and the outer wall of the rotating gear (602) is meshingly connected to the cleaning brush (603).

2. An ICP plasma etching device for semiconductor manufacturing according to claim 1, characterized in that: The cleaning brush (603) is slidably connected to the outer wall of the lifting frame (4), and the cleaning brush (603) is in a circular ring shape.

3. The ICP plasma etching device for semiconductor manufacturing according to claim 1, characterized in that: The vertical center axis of the plasma etching box (1) is consistent with the vertical center axis of the cleaning brush (603), and the lifting frame (4) is cylindrical.

4. The ICP plasma etching device for semiconductor manufacturing according to claim 1, characterized in that: A limiting assembly (7) for limiting position is provided on the top outer wall of the support platform (5), and the limiting assembly (7) comprises a second motor (701) and a rotating screw (702), and the end of the second motor (701) is connected to the rotating screw (702).

5. The ICP plasma etching device for semiconductor manufacturing according to claim 4, characterized in that: The limiting assembly (7) further comprises a transmission belt (703), a first clamping plate (704) and a second clamping plate (705); the outer wall of the end of the second motor (701) is meshedly connected with the transmission belt (703); and the outer wall of the rotating screw rod (702) is connected with the first clamping plate (704) and the second clamping plate (705).

6. The ICP plasma etching device for semiconductor manufacturing according to claim 5, characterized in that: The limiting assembly (7) further comprises a first enclosing plate (706) and a first slide plate (707); the outer wall of the second clamping plate (705) is provided with a second clamping plate (705), and the interior of the first enclosing plate (706) is slidably connected with the first slide plate (707).

7. An ICP plasma etching device for semiconductor manufacturing according to claim 6, characterized in that: The limiting assembly (7) further comprises a second enclosure (708) and a second slide plate (709); the outer wall of the second clamping plate (705) is provided with the second enclosure (708), and the interior of the second enclosure (708) is slidably connected with the second slide plate (709).

8. An ICP plasma etching device for semiconductor manufacturing according to claim 7, characterized in that: The side outer walls of the first clamping plate (704) and the second clamping plate (705) are connected via a first enclosure plate (706) and a first slide plate (707), and the bottom outer walls of the first clamping plate (704) and the second clamping plate (705) are connected via a second enclosure plate (708) and a second slide plate (709).

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