Semiconductor lead frame structure for enhancing die bonding stability

Abstract

The utility model provides a semiconductor lead frame structure capable of enhancing solid crystal stability, which comprises a lead frame base body, a solid crystal base island is arranged above the lead frame base body, a square frame shallow pit and a convex point are extruded on the solid crystal base island, a semiconductor wafer is arranged above elargol, and the semiconductor wafer is arranged above the elargol. The semiconductor wafer is fixedly arranged on the die bonding base island through elargol, the lead frame base body is provided with a small square-frame-shaped pit and a protruding point base island platform before die bonding to increase the contact area of the elargol, the square-frame-shaped shallow pit and the protruding point are extruded on the die bonding base island, the contact area of the elargol is increased, and the binding force of the wafer and the base island is enhanced. And a layer of ultra-thin protective film is coated on the silver plating layer, so that the stability of the wafer in the semiconductor is improved.

Description

Technical Field

[0001] The utility model relates to the manufacture of electronic and electrical component products and the application field thereof, in particular to a semiconductor lead frame structure for enhancing the stability of solid crystal. Background Art

[0002] At present, the production process of optocouplers includes the following steps: die bonding; baking; wire bonding; glue dispensing; baking; primary sealing with white glue; baking; chip cutting; secondary sealing with black glue; baking; glue removal; electroplating; single chip cutting; testing; packaging and other processes. During die bonding, since the silver layer on the base island is very smooth, the bonding force between the silver glue and the silver-plated layer of the base island is unstable. After baking, the chip and the silver glue will peel off from the lead frame after die bonding.

[0003] However, the existing semiconductor lead frame structure has some shortcomings during use and still needs to be improved. First of all, the existing semiconductor lead frame is unstable in die bonding, silver glue peeling occurs, and the chip and lead frame are not conductive, which leads to electrical performance failure. Therefore, we make improvements to this and propose a semiconductor lead frame structure with enhanced die bonding stability. Utility Model Content

[0004] The purpose of the utility model is to address the problems raised by the existing background technology. In order to achieve the above-mentioned purpose of the utility model, the utility model provides the following technical solutions: a semiconductor lead frame structure for enhancing the stability of solid crystal, including a lead frame substrate, a solid crystal base island is arranged on the lead frame substrate, a square frame of shallow pits and convex points are squeezed out on the solid crystal base island, and the solid crystal base island is coated with silver glue to increase the contact area of ​​the silver glue and enhance the bonding force between the chip and the base island.

[0005] As a preferred technical solution of the utility model, an electroplated copper-nickel-silver layer is provided on the lead frame substrate.

[0006] As a preferred technical solution of the utility model, an extremely thin protective film is coated on the electroplated copper-nickel-silver layer.

[0007] As a preferred technical solution of the utility model, a semiconductor chip is arranged above the silver paste.

[0008] As a preferred technical solution of the utility model, the semiconductor wafer is fixed on the crystal-fixing base island by silver glue.

[0009] As a preferred technical solution of the utility model, the lead frame substrate has small square-shaped pits and convex base island platforms before die bonding.

[0010] Compared with the prior art, the utility model has the following beneficial effects: In the scheme of the utility model: by squeezing out a square frame of shallow pits and bumps on the solid crystal base island, the contact area of ​​the silver glue is increased, the bonding force between the chip and the base island is enhanced, and an extremely thin protective film is coated on the silver-plated layer to improve the stability of the chip in the semiconductor. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 A schematic diagram of the structure provided by the utility model;

[0012] Figure 2 This is a schematic diagram of the semiconductor chip structure provided by the utility model.

[0013] Indicated in the figure:

[0014] 1. Lead frame substrate; 2. Electroplated copper-nickel-silver layer; 3. Protective film; 4. Silver glue; 5. Semiconductor chip; 6. Solid crystal base island; 7. Pits; 8. Bumps. DETAILED DESCRIPTION

[0015] To make the purpose, technical solution and advantages of the embodiment of the utility model clearer, the technical solution in the embodiment of the utility model will be described clearly and completely in conjunction with the accompanying drawings. Obviously, the described embodiment is a part of the embodiment of the utility model, not all of the embodiments.

[0016] Therefore, the following detailed description of the embodiments of the utility model is not intended to limit the scope of the utility model for which protection is sought, but merely represents some embodiments of the utility model. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model. It should be noted that the embodiments of the utility model and the features and technical solutions in the embodiments can be combined with each other without conflict. It should be noted that similar numbers and letters represent similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0017] Example 1: Please refer to Figure 1-Figure 2 A semiconductor lead frame structure for enhancing the stability of die bonding includes a lead frame substrate 1, a die bonding base island 6 is arranged above the lead frame substrate 1, a square shallow pit 7 and a bump 8 are extruded on the die bonding base island 6, and a silver glue 4 is coated on the die bonding base island 6 to increase the contact area of ​​the silver glue 4 and enhance the bonding force between the chip and the base island. An electroplated copper-nickel silver layer 2 is arranged above the lead frame substrate 1. An extremely thin protective film 3 is coated on the electroplated copper-nickel silver layer 2.

[0018] A semiconductor chip 5 is arranged above the silver glue 4. The semiconductor chip 5 is fixedly arranged on the crystal-bonding base island 6 by the silver glue 4. The lead frame substrate 1 has a small square-shaped pit 7 and a bump 8 base island platform before crystal bonding. By arranging the small square-shaped pit 7 and the bump 8 on the lead frame substrate 1 and increasing the contact area of ​​the silver glue 4 on the crystal-bonding base island 6, the stability of the semiconductor chip 5 is significantly improved. This helps to reduce the possibility of displacement, vibration or distortion of the chip during the manufacturing process, thereby improving production efficiency and product quality.

[0019] Due to the enhanced stability and bonding force, the defect rate can be reduced and the consistency of chip performance can be improved. Production and quality requirements can be met with higher precision and control, while also reducing the risk of product recalls. The use of the protective film 3 prevents the silver glue 4 from peeling off, which means that less waste may be generated during the processing process, which is more environmentally friendly. At the same time, the design of this structure is also in line with the current trend of green manufacturing and is conducive to achieving sustainable development. The stable chip structure can improve the smoothness of the production line and reduce production line stagnation or failure caused by chip instability. This will directly lead to an increase in production efficiency and save time and resources for the company.

[0020] During use of the utility model, a solid crystal base island 6 is arranged above the lead frame substrate 1, a square frame of shallow pits 7 and bumps 8 are squeezed out on the solid crystal base island 6, and silver glue 4 is coated on the solid crystal base island 6 to increase the contact area of ​​the silver glue 4 and enhance the bonding force between the chip and the base island.

[0021] An electroplated copper-nickel-silver layer 2 is disposed above the lead frame substrate 1. An extremely thin protective film 3 is coated on the electroplated copper-nickel-silver layer 2. A semiconductor chip 5 is disposed above the silver glue 4. The semiconductor chip 5 is fixedly disposed on the crystal-bonding base island 6 by the silver glue 4.

[0022] The lead frame substrate 1 has a small square-shaped pit 7 and a bump 8 base island platform before solid crystal. By providing the small square-shaped pit 7 and the bump 8 on the lead frame substrate 1, and increasing the contact area of ​​the silver glue 4 on the solid crystal base island 6, the stability of the semiconductor chip 5 is significantly improved. This helps to reduce the possibility of displacement, vibration or distortion of the chip during the manufacturing process, thereby improving production efficiency and product quality. Small square-shaped pits 7 and bumps 8 are squeezed out on the smooth and flat base island to increase the contact area between the silver glue 4 and the base island, thereby improving the stability of the chip. Prevent the silver glue 4 from peeling off.

[0023] The above embodiments are only used to illustrate the present invention and are not intended to limit the technical solutions described in the present invention. Although the present invention has been described in detail with reference to the above embodiments, the present invention is not limited to the above specific implementation methods. Therefore, any modification or equivalent replacement of the present invention; and all technical solutions and improvements thereof that do not depart from the spirit and scope of the present invention are included in the scope of the claims of the present invention.

Claims

1. A semiconductor lead frame structure with enhanced die bonding stability, comprising a lead frame substrate (1), characterized in that: A crystal-solidifying base island (6) is arranged above the lead frame substrate (1), a square shallow concave pit (7) and a convex point (8) are extruded on the crystal-solidifying base island (6), and silver glue (4) is coated on the crystal-solidifying base island (6).

2. A semiconductor lead frame structure for enhancing die bonding stability according to claim 1, characterized in that: An electroplated copper-nickel-silver layer (2) is provided above the lead frame substrate (1).

3. A semiconductor lead frame structure for enhancing die bonding stability according to claim 2, characterized in that: An extremely thin protective film (3) is coated on the electroplated copper-nickel-silver layer (2).

4. A semiconductor lead frame structure for enhancing die bonding stability according to claim 3, characterized in that: A semiconductor chip (5) is arranged above the silver paste (4).

5. A semiconductor lead frame structure for enhancing die bonding stability according to claim 4, characterized in that: The semiconductor chip (5) is fixed on the crystal-solidifying base island (6) by means of silver glue (4).

6. A semiconductor lead frame structure for enhancing die bonding stability according to claim 5, characterized in that: The lead frame substrate (1) is provided with a small square frame-shaped concave pit (7) and a convex point (8) base island platform before crystal bonding.

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