Photoelectric coupler lead frame and photoelectric coupler

Abstract

The utility model discloses a photoelectric coupler lead frame and a photoelectric coupler. The photoelectric coupler lead frame comprises a first lead frame and a second lead frame. The first lead frame comprises a plurality of first frame units which are arranged at intervals, each first frame unit comprises a first chip bonding part, and the area of each first chip bonding part can be used for die bonding of a light-emitting chip; the second lead frame comprises a plurality of second frame units which are arranged at intervals, each second frame unit comprises a second chip bonding part, and the area of each second chip bonding part can be used for die bonding of a photosensitive chip; a first positioning mark and a range measuring mark are arranged on the first chip bonding part; the second chip bonding part is provided with a second positioning mark and an etching mark. According to the photoelectric coupler lead frame provided by the utility model, the regulation and control efficiency of output grading of photoelectric coupler products can be improved, and the production efficiency of the products can be improved.

Description

Technical Field

[0001] The utility model relates to the technical field of photoelectric couplers, in particular to a photoelectric coupler lead frame and a photoelectric coupler. Background Art

[0002] As a safety device for electric-optical-electrical conversion isolation, photocouplers have a wide range of market applications and environments. Usually, photocouplers contain a light-emitting chip and a photosensitive chip, which are encapsulated in the same package by packaging glue. When an input current signal is applied to the input end of the photocoupler, the light-emitting chip emits light, and the photosensitive chip generates an induced current after receiving the light, thereby realizing the conversion between photoelectric signals.

[0003] When the output of optocoupler products is graded, CTR (current conversion coefficient) is the main characteristic indicator. When the size of the applied input current signal remains unchanged, the size of the induced current is directly related to the light energy emitted by the light-emitting chip, the design of the comparison position of the light-emitting chip and the photosensitive chip, the design of the spacing distance, and the light transmittance of the materials between them. For current optocouplers, common internal packaging structures are contrast type and reflective type. In general packaging design, the contrast type structure in which the light-emitting chip and the photosensitive chip are vertically contrasted is the solution with the least light waste. On the basis of not changing the lead frame structure, changing the CTR drop generally requires changing the parameter pairing of the light-emitting chip and the photosensitive chip. If the horizontal position of the comparison between the light-emitting chip and the photosensitive chip deviates, it will directly lead to less light received by the photosensitive chip, thereby affecting the induced current and changing the CTR drop, which is very likely to cause mixing and deviation, reducing production efficiency. Utility Model Content

[0004] The purpose of the utility model is to overcome the deficiencies of the prior art. The utility model provides a photoelectric coupler lead frame and a photoelectric coupler, which can improve the control efficiency of the output grading of photoelectric coupler products and improve the production efficiency of the products.

[0005] The utility model provides a photoelectric coupler lead frame, which comprises a first lead frame and a second lead frame;

[0006] The first lead frame comprises a first lead frame body, a plurality of mutually parallel first connecting strips are arranged between the first lead frame bodies, a plurality of first frame units arranged at intervals are arranged on any first connecting strip, each first frame unit comprises a first chip bonding portion, the first chip bonding portion is arranged on a first side of the first connecting strip, and the area of ​​the first chip bonding portion can be used to bond one light-emitting chip;

[0007] The second lead frame comprises a second lead frame body, a plurality of second connecting strips parallel to each other are arranged between the second lead frame bodies, a plurality of second frame units arranged at intervals are arranged on any second connecting strip, each second frame unit comprises a second chip bonding portion, the second chip bonding portion is arranged on a first side of the second connecting strip, and the area of ​​the second chip bonding portion can be used to bond a photosensitive chip;

[0008] A first positioning mark and a range measurement mark are arranged on the first chip bonding portion, the first positioning mark is arranged at the center of the first chip bonding portion, and the range measurement mark surrounds the first positioning mark;

[0009] A second positioning mark and an etching mark are arranged on the second chip bonding portion, the second positioning mark is arranged at the center of the second chip bonding portion, and the etching mark surrounds the second positioning mark.

[0010] Furthermore, the etching mark is a double-layer field structure.

[0011] Furthermore, the etching depth of the etching mark is 10um-30um.

[0012] Furthermore, the interval between the first layer of the 'field' structure and the second layer of the 'field' structure in the double-layer 'field' structure is greater than half the length of the photosensitive chip.

[0013] Furthermore, the first frame unit also includes a first welding wire portion, a first pin, and a second pin, the first pin and the second pin are perpendicular to the first connecting strip, the first welding wire portion is arranged on the first side of the first connecting strip, the first pin and the second pin are arranged on the second side of the first connecting strip, the first chip bonding portion is connected to the first pin, and the first welding wire portion is connected to the second pin.

[0014] Furthermore, a high-reflective metal layer is electroplated on the first chip bonding portion and the first bonding wire portion.

[0015] Furthermore, the second frame unit also includes a second welding wire portion, a third pin, and a fourth pin, the third pin and the fourth pin are perpendicular to the second connecting strip, the second welding wire portion is arranged on the first side of the second connecting strip, the third pin and the fourth pin are arranged on the second side of the second connecting strip, the second chip bonding portion is connected to the third pin, and the second welding wire portion is connected to the fourth pin.

[0016] Furthermore, a high-reflective metal layer is electroplated on the second chip bonding portion and the second bonding wire portion.

[0017] The utility model also provides a photoelectric coupler, the photoelectric coupler comprising a first frame unit in the above-mentioned photoelectric coupler lead frame, a second frame unit in the above-mentioned photoelectric coupler lead frame, a light-emitting chip, a photosensitive chip and a packaging body, wherein the first frame unit and the second frame unit are arranged opposite to each other;

[0018] The light-emitting chip is arranged on the first chip bonding part of the first frame unit, and the photosensitive chip is arranged on the second chip bonding part of the second frame unit. The light-emitting chip and the photosensitive chip are arranged opposite to each other. The light-emitting chip is connected to the first welding wire part of the first frame unit where it is located through a wire, and the photosensitive chip is connected to the second welding wire part of the second frame unit where it is located through a wire. The package body encapsulates the first frame unit, the second frame unit, the light-emitting chip, the photosensitive chip and the wire.

[0019] Furthermore, the material of the packaging body is black opaque epoxy resin.

[0020] The utility model provides a photoelectric coupler lead frame and a photoelectric coupler, wherein a positioning mark and a range measurement mark are arranged on a chip bonding portion of a lead frame for placing a light-emitting chip, so as to adjust a control position of the light-emitting chip; a positioning mark and an etching mark are arranged on a chip bonding portion of a lead frame for placing a photosensitive chip, so as to adjust a control position of the photosensitive chip, so as to adjust a CTR of a product, improve the control efficiency of output grading of a photoelectric coupler product, and improve the production efficiency of the product. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0022] Figure 1 This is a schematic diagram of the first lead frame structure in the first embodiment of the utility model;

[0023] Figure 2 This is a schematic diagram of the structure of the first frame unit in the first embodiment of the present utility model;

[0024] Figure 3 This is a schematic diagram of the structure of the light-emitting chip and the bonding wires on the first frame unit in the first embodiment of the present utility model;

[0025] Figure 4 This is a schematic diagram of the second lead frame structure in the first embodiment of the utility model;

[0026] Figure 5 This is a schematic diagram of the structure of the second frame unit in the first embodiment of the present utility model;

[0027] Figure 6 This is a schematic diagram of the structure of the photosensitive chip and the bonding wires fixed on the second frame unit in the first embodiment of the utility model;

[0028] Figure 7 It is a schematic structural diagram of two lead frames superimposed in the first embodiment of the utility model;

[0029] Figure 8 It is the first embodiment of the present utility model Figure 7 The enlarged side view of the structure at c in the middle;

[0030] Fig. 9 It is a schematic diagram of the structure of the photoelectric coupler in the second embodiment of the utility model;

[0031] Fig.10 It is a schematic diagram of the output binning of the photoelectric coupler in the second embodiment of the present utility model. DETAILED DESCRIPTION

[0032] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0033] Embodiment 1

[0034] A first embodiment of the present invention provides a photoelectric coupler lead frame, wherein the photoelectric coupler lead frame comprises a first lead frame and a second lead frame.

[0035] In an optional implementation of this embodiment, Figure 1 As shown, Figure 1 A schematic diagram of the first lead frame structure in the first embodiment of the utility model is shown.

[0036] In an optional implementation of the present embodiment, the first lead frame includes a first lead frame body 1 , three mutually parallel first connecting bars 2 are arranged between the first lead frame bodies 1 , and any first connecting bar 2 is provided with a plurality of first frame units 21 arranged at intervals.

[0037] It should be noted that the number of the first connecting bars 2 may be one or more, and the number of the first frame units 21 on each first connecting bar 2 may be one or more, depending on actual design requirements.

[0038] In an optional implementation of this embodiment, Figure 2 As shown, Figure 2 The first frame unit structure schematic diagram in the first embodiment of the utility model is shown. Figure 2 for Figure 1 Enlarged schematic diagram of point a in the middle.

[0039] In an optional implementation of this embodiment, the first frame unit 21 includes a first chip bonding portion 211 , and the first chip bonding portion 211 is disposed on a first side of the first connecting bar 2 .

[0040] In an optional implementation of this embodiment, the area of ​​the first chip bonding portion 211 is sufficient to bond one light-emitting chip.

[0041] Specifically, the first chip bonding portion 211 is used to bond a light-emitting chip.

[0042] In an optional implementation of this embodiment, the light-emitting chip is an infrared light-emitting chip.

[0043] In an optional implementation of this embodiment, a first positioning mark 31 is disposed on the first chip bonding portion 211 , and the first positioning mark 31 is disposed at the center of the first chip bonding portion 211 .

[0044] Specifically, the first positioning mark 31 may be “+” or “×”, and the intersection of the two line segments in the positioning mark is the center point of the first chip bonding portion 211 . The first positioning mark 31 may be used to locate the center of the light-emitting chip.

[0045] In an optional implementation of this embodiment, a range measurement mark 32 is provided on the first chip bonding portion 211 , and the range measurement mark 32 surrounds the first positioning mark 31 .

[0046] Specifically, the range measurement mark 32 can be “O” or “□” and surrounds the “+” or “×” of the first positioning mark 31 . The range measurement mark 32 is used to determine the die-bonding position of the light-emitting chip to ensure that the light-emitting chip is bonded within the range measurement mark 32 .

[0047] In an optional implementation of the present embodiment, the first frame unit 21 also includes a first welding wire portion 212, a first pin 213 and a second pin 214, the first pin 213 and the second pin 214 are perpendicular to the first connecting strip 2, the first welding wire portion 212 is arranged on the first side of the first connecting strip 2, that is, on the same side of the first connecting strip 2 as the first chip bonding portion 211, and the first pin 213 and the second pin 214 are arranged on the second side of the first connecting strip 2.

[0048] It should be noted that when the first frame unit 21 is separated from the first connecting bar 2 and used alone, the first chip bonding portion 211 is connected to the first pin 213 , and the first welding wire portion 212 is connected to the second pin 214 .

[0049] In an optional implementation of this embodiment, a high-reflective metal layer is electroplated on the first chip bonding portion 211 and the first bonding wire portion 212 .

[0050] Specifically, the high-reflective metal layer includes a gold-plated layer or a silver-plated layer, and the high-reflective metal layer is used to improve the reflectivity of the light emitted by the light-emitting chip.

[0051] In an optional implementation of this embodiment, Figure 3 As shown, Figure 3 The schematic diagram of the structure of die-bonding the light-emitting chip and bonding wires on the first frame unit in the first embodiment of the utility model is shown.

[0052] Specifically, the light emitting chip 33 is die-bonded on the first chip bonding portion 211 , the light emitting chip 33 is positioned based on the first positioning mark 31 and the range measurement mark 32 , and the light emitting chip 33 is connected to the first wire bonding portion 32 based on a wire 34 .

[0053] In an optional implementation of this embodiment, Figure 4 As shown, Figure 4 A schematic diagram of the second lead frame structure in the second embodiment of the present utility model is shown.

[0054] In an optional implementation of the present embodiment, the second lead frame includes a second lead frame body 4 , three second connecting bars 5 parallel to each other are arranged between the second lead frame bodies 4 , and a plurality of second frame units 51 arranged at intervals are arranged on any second connecting bar 5 .

[0055] It should be noted that the number of the second connecting bars 5 may be one or more, and the number of the second frame units 51 on each second connecting bar 5 may be one or more, depending on actual design requirements.

[0056] In an optional implementation of this embodiment, Figure 5 As shown, Figure 5 The schematic diagram of the structure of the second frame unit in the second embodiment of the utility model is shown. Figure 5 for Figure 4 Enlarged schematic diagram of point b in the middle.

[0057] In an optional implementation of this embodiment, the second frame unit 51 includes a second chip bonding portion 511 , and the second chip bonding portion 511 is disposed on a first side of the second connecting strip 5 .

[0058] In an optional implementation of this embodiment, the area of ​​the second chip bonding portion 511 can be used to bond one photosensitive chip.

[0059] Specifically, the second chip bonding portion 511 is used to bond a photosensitive chip.

[0060] In an optional implementation of this embodiment, a second positioning mark 61 is disposed on the second chip bonding portion 511 , and the second positioning mark 61 is disposed at the center of the second chip bonding portion 511 .

[0061] Specifically, the second positioning mark 61 may be “+” or “×”, and the intersection of the two line segments in the positioning mark is the center point of the second chip bonding portion 511. The second positioning mark 61 can be used to locate the center of the photosensitive chip.

[0062] In an optional implementation of this embodiment, an etching mark 62 is provided on the second chip bonding portion 511 , and the etching mark 62 surrounds the second positioning mark 61 .

[0063] In an optional implementation of this embodiment, the etching mark 62 is a double-layer field structure.

[0064] In an optional implementation of this embodiment, the etching depth of the etching mark 62 is 10um-30um.

[0065] Specifically, in the lead frame of this embodiment, the etching depth of the etching mark is controlled between 10um and 30um, which can ensure that the etching mark scale is clear and the etched etched groove will not be deformed or have burrs, and will not affect the subsequent chip bonding.

[0066] In an optional implementation of the present embodiment, the interval between the first layer of the 'field' structure and the second layer of the 'field' structure in the double-layer 'field' structure is greater than half the length of the photosensitive chip.

[0067] Specifically, the interval d between the first layer of the zigzag structure and the second layer of the zigzag structure in the double-layer zigzag structure is greater than half the length of the die-bonded photosensitive chip, thereby ensuring the accuracy of product grading.

[0068] In an optional implementation of the present embodiment, the second frame unit 51 also includes a second welding wire portion 512, a third pin 513 and a fourth pin 514, the third pin 513 and the fourth pin 514 are perpendicular to the second connecting strip 5, the second welding wire portion 512 is arranged on a first side of the second connecting strip 5, that is, on the same side of the second connecting strip 5 as the second chip bonding portion 511, and the third pin 513 and the fourth pin 514 are arranged on a second side of the second connecting strip 5.

[0069] It should be noted that when the second frame unit 51 is separated from the second connecting bar 5 and used alone, the second chip bonding portion 511 is connected to the third pin 513 , and the second welding wire portion 512 is connected to the fourth pin 514 .

[0070] In an optional implementation of this embodiment, a high-reflective metal layer is electroplated on the second chip bonding portion 511 and the second wire bonding portion 512 .

[0071] Specifically, the high-reflective metal layer includes a gold-plated layer or a silver-plated layer, and the high-reflective metal layer is used to improve the reflectivity of the light emitted by the light-emitting chip.

[0072] In an optional implementation of this embodiment, Figure 6 As shown, Figure 6 A schematic diagram of the structure of die-bonding a photosensitive chip and bonding wires on a second frame unit in the second embodiment of the present utility model is shown.

[0073] Specifically, the photosensitive chip 63 is die-bonded on the second chip bonding portion 511 , the photosensitive chip 63 is positioned based on the second positioning mark 61 and the etching mark 62 , and the photosensitive chip 63 is connected to the second welding wire portion 62 based on a wire 64 .

[0074] In an optional implementation of this embodiment, Figure 7 As shown, Figure 7 A schematic structural diagram of two superimposed lead frames in the first embodiment of the present invention is shown.

[0075] In an optional implementation of this embodiment, Figure 7As shown, the photocoupler lead frame includes a first lead frame and a second lead frame, the first lead frame and the second lead frame are overlapped, the first lead frame body 1 and the second lead frame body 4 are overlapped with each other, and the first frame unit 81 on the first lead frame and the second frame unit 82 on the second lead frame are arranged relatively.

[0076] In an optional implementation of this embodiment, Figure 8 As shown, Figure 8 The utility model embodiment 1 is shown Figure 7 Schematic diagram of the enlarged structure side view at c in the middle.

[0077] Specifically, the first frame unit 81 is arranged opposite to the second frame unit 82 , and the light emitting chip 33 arranged on the first frame unit 81 and the photosensitive chip 63 arranged on the second frame unit 82 are arranged opposite to each other.

[0078] In summary, embodiment 1 of the utility model provides a photoelectric coupler lead frame, and a first positioning mark and a range measurement mark are set on the first chip bonding part of the first lead frame for placing the light-emitting chip, so as to adjust the reference position of the light-emitting chip; a second positioning mark and an etching mark are set on the second chip bonding part of the second lead frame for placing the photosensitive chip, so as to adjust the reference position of the photosensitive chip, so as to adjust the CTR of the product, improve the control efficiency of the output grading of the photoelectric coupler product, and improve the production efficiency of the product; a high-reflection metal layer is set on the surface of the first chip bonding part, the first welding wire part, the second chip bonding part, and the second welding wire part, so as to improve the reflectivity of the light emitted by the light-emitting chip and improve the working efficiency of the product.

[0079] Embodiment 2

[0080] Embodiment 2 of the present invention provides a photoelectric coupler, which includes a first frame unit in the photoelectric coupler lead frame in embodiment 1, a second frame unit in the photoelectric coupler lead frame in embodiment 1, a light-emitting chip, a photosensitive chip and a package.

[0081] In an optional implementation of this embodiment, Fig. 9 As shown, Fig. 9 A schematic structural diagram of the photoelectric coupler in the second embodiment of the utility model is shown, wherein the photoelectric coupler 7 includes a first frame unit 81, a second frame unit 82, a light-emitting chip, a photosensitive chip and a package 83, wherein the first frame unit 81 is the first frame unit in the photoelectric coupler lead frame in the first embodiment, and the second frame unit 82 is the second frame unit in the photoelectric coupler lead frame in the first embodiment, and the first frame unit 81 and the second frame unit 82 are arranged relative to each other.

[0082] In an optional implementation of the present embodiment, the light-emitting chip is arranged on the chip bonding part of the first frame unit 81, and the photosensitive chip is arranged on the chip bonding part of the second frame unit 82. The light-emitting chip and the photosensitive chip are arranged opposite to each other, and the light-emitting chip is connected to the first welding wire part of the first frame unit 81 through a wire, and the photosensitive chip is connected to the second welding wire part of the second frame unit 82 through a wire.

[0083] In an optional implementation of the present embodiment, the packaging body 83 packages the first frame unit 81, the second frame unit 82, the light-emitting chip, the photosensitive chip and the wires into one.

[0084] Specifically, the material of the packaging body 83 is black opaque epoxy resin.

[0085] In an optional implementation of this embodiment, the first pin 811 and the second pin 812 of the first frame unit 81 are bent and extend out of the package body 83 , and the first pin 821 and the second pin 822 of the second frame unit 82 are bent and extend out of the package body 83 .

[0086] In an optional implementation of this embodiment, the light-emitting chip is an infrared light-emitting chip.

[0087] In an optional implementation of the present embodiment, when manufacturing the photoelectric coupler 7, after the light-emitting chip is bonded to the first chip bonding portion and connected with the first welding wire portion, the light-emitting chip is coated by dispensing glue. After the colloid hardens, the first lead frame bonded with the light-emitting chip after dispensing glue and the second lead frame bonded with the photosensitive chip are overlapped facing each other, and then a package is formed by plastic sealing, and the light-emitting chip coated with glue, the first frame unit where the light-emitting chip is located, the photosensitive chip, the second frame unit where the photosensitive chip is located, and the wires are plastic-sealed as a whole.

[0088] In an optional implementation of this embodiment, Fig.10 As shown, Fig.10 A schematic diagram showing the output binning of the photoelectric coupler in the second embodiment of the present utility model is shown. Fig.10Four situations are shown in total, among which in situation 1, the die-bonding position of the photosensitive chip 63 is within the second positioning mark 61 of the second chip bonding part 511 of the second frame unit 82, in situation 2, the die-bonding position of the photosensitive chip 63 is within the first layer of the chevron structure of the etching mark 62 of the second chip bonding part 511 of the second frame unit 82, in situation 3, the die-bonding position of the photosensitive chip 63 is between the first layer and the second layer of the chevron structure of the etching mark 62 of the second chip bonding part 511 of the second frame unit 82, and in situation 4, the die-bonding position of the photosensitive chip 63 is outside the etching mark 62 of the second chip bonding part 511 of the second frame unit 82. These represent four different grading situations, and the CTR grading of the optocoupler product can be regulated by changing the die-bonding position of the photosensitive chip.

[0089] In summary, embodiment 2 of the utility model provides a photoelectric coupler, including a first frame unit and a second frame unit in embodiment 1, and a first positioning mark and a range measurement mark are set on the first chip bonding part of the first lead frame for placing the light-emitting chip, so as to adjust the reference position of the light-emitting chip; a second positioning mark and an etching mark are set on the second chip bonding part of the second lead frame for placing the photosensitive chip, so as to adjust the reference position of the photosensitive chip to adjust the CTR of the product, improve the control efficiency of the output grading of the photoelectric coupler product, and improve the production efficiency of the product; a high-reflection metal layer is set on the surface of the first chip bonding part, the first welding wire part, the second chip bonding part, and the second welding wire part to improve the reflectivity of the light emitted by the light-emitting chip and improve the working efficiency of the product.

[0090] The above is a detailed introduction to an optocoupler lead frame and an optocoupler provided in an embodiment of the utility model. Specific examples are used in this article to illustrate the principle and implementation method of the utility model. The description of the above embodiments is only used to help understand the method and core idea of ​​the utility model. At the same time, for a person skilled in the art, according to the idea of ​​the utility model, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the utility model.

Claims

1. A photocoupler lead frame, characterized in that: The optocoupler lead frame includes a first lead frame and a second lead frame; The first lead frame includes a first lead frame body, and a plurality of mutually parallel first connection bars are arranged between the first lead frame bodies. A plurality of first frame units arranged at intervals are provided on any one of the first connection bars. Each first frame unit includes a first chip bonding portion, and the first chip bonding portion is arranged on the first side of the first connection bar. The area of the first chip bonding portion can bond one light-emitting chip; The second lead frame includes a second lead frame body, and a plurality of mutually parallel second connection bars are arranged between the second lead frame bodies. A plurality of second frame units arranged at intervals are provided on any one of the second connection bars. Each second frame unit includes a second chip bonding portion, and the second chip bonding portion is arranged on the first side of the second connection bar. The area of the second chip bonding portion can bond one photosensitive chip; A first positioning mark and a range measurement mark are provided on the first chip bonding portion. The first positioning mark is arranged at the center of the first chip bonding portion, and the range measurement mark surrounds the first positioning mark; A second positioning mark and an etching mark are provided on the second chip bonding portion. The second positioning mark is arranged at the center of the second chip bonding portion, and the etching mark surrounds the second positioning mark.

2. The optocoupler lead frame according to claim 1, wherein: The etching mark is a double-layer cross structure.

3. The optocoupler lead frame according to claim 2, wherein: The etching depth of the etching mark is 10um - 30um.

4. The optocoupler lead frame according to claim 3, wherein: The interval between the first cross structure and the second cross structure in the double-layer cross structure is greater than half of the length of the photosensitive chip.

5. The optocoupler lead frame according to claim 1, wherein: The first frame unit further includes a first wire bonding portion, a first lead, and a second lead. The first lead and the second lead are perpendicular to the first connection bar. The first wire bonding portion is arranged on the first side of the first connection bar, and the first lead and the second lead are arranged on the second side of the first connection bar. The first chip bonding portion is connected to the first lead, and the first wire bonding portion is connected to the second lead.

6. The optocoupler lead frame according to claim 5, wherein: A high-reflection metal layer is electroplated on the first chip bonding portion and the first wire bonding portion.

7. The optocoupler lead frame according to claim 1, wherein: The second frame unit further includes a second wire bonding portion, a third lead, and a fourth lead. The third lead and the fourth lead are perpendicular to the second connection bar. The second wire bonding portion is arranged on the first side of the second connection bar, and the third lead and the fourth lead are arranged on the second side of the second connection bar. The second chip bonding portion is connected to the third lead, and the second wire bonding portion is connected to the fourth lead.

8. The optocoupler lead frame according to claim 7, wherein: A high-reflection metal layer is electroplated on the second chip bonding portion and the second wire bonding portion.

9. A photoelectric coupler, characterized in that: The optocoupler includes a first frame unit in the optocoupler lead frame according to any one of claims 1 - 8, a second frame unit in the optocoupler lead frame according to any one of claims 1 - 8, a light-emitting chip, a photosensitive chip, and a package body. The first frame unit and the second frame unit are arranged oppositely; The light-emitting chip is arranged on the first chip bonding part of the first frame unit, and the photosensitive chip is arranged on the second chip bonding part of the second frame unit. The light-emitting chip and the photosensitive chip are arranged opposite to each other. The light-emitting chip is connected to the first welding wire part of the first frame unit where it is located through a wire, and the photosensitive chip is connected to the second welding wire part of the second frame unit where it is located through a wire. The package body encapsulates the first frame unit, the second frame unit, the light-emitting chip, the photosensitive chip and the wire.

10. The photocoupler according to claim 9, wherein: The material of the packaging body is black opaque epoxy resin.

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