Process chamber and semiconductor process equipment

Abstract

The utility model provides a process chamber and semiconductor process equipment. The process chamber comprises a chamber body, a process base and a magnetic assembly, the process base is provided with a bearing surface for bearing a wafer, and the magnetic assembly is arranged outside the chamber body in a surrounding manner; the magnetic assembly comprises a magnet structure and an adjusting assembly connected to the magnet structure, and the adjusting assembly is used for driving the magnet structure to move in a first preset direction, a second preset direction and a third preset direction; wherein the first preset direction, the second preset direction and the third preset direction are perpendicular to one another; any direction of the first preset direction, the second preset direction and the third preset direction is perpendicular to the bearing face. The adjusting assembly in the magnetic assembly can drive the magnet structure to move freely in three degrees of freedom according to specific process requirements, so that the position of the magnet structure is adjustable, the final process result is optimized, and a uniform film can be deposited on the surface of a wafer.

Description

Technical Field

[0001] The embodiments of the present disclosure relate to, but are not limited to, the field of semiconductor technology, and in particular, to a process chamber and semiconductor process equipment. Background Art

[0002] In the back-end process of integrated circuit chip preparation, magnetron sputtering in physical vapor deposition (PVD) is one of the most widely used technologies. Metal interconnection, hard mask, and packaging all require the use of PVD technology. Among them, copper interconnection technology is widely used due to the advantages of copper's high conductivity, low resistivity, and reliable interconnection.

[0003] In the copper interconnect PVD process, DC magnetron sputtering technology is usually used to prepare copper thin films, that is, energetic particles (such as argon ions) bombard the solid surface, causing various particles on the surface, such as atoms, molecules or clusters, to escape from the surface of the object and then deposit on the surface of the wafer. When the copper target is connected to the power supply, the argon ions in the plasma are attracted by the negative charge of the cathode to bombard the target, and copper atoms and copper ions are simultaneously generated on the surface of the target after the bombardment. The copper atoms and copper ions gradually fall down, and the copper atoms finally fall on the surface of the wafer to form a copper film; during the preparation process, the distribution uniformity of copper ions above the wafer surface affects the process uniformity of the copper film to a certain extent.

[0004] Generally speaking, magnets are installed, and magnetic fields at different positions will have different restraining effects on copper ions. By using multiple sets of magnets at different positions to generate magnetic fields to restrain copper ions, the trajectory of the falling copper ions is guided, so that the copper ions are more evenly distributed on the wafer surface, thereby obtaining a more uniform copper film.

[0005] However, in the related art, the magnetic field strength in a specific area can only be changed by changing the magnitude of the current passing through the magnet, and the relative position of the magnetic field with respect to the process chamber cannot be adjusted, so that the range of action of the magnetic field is limited. When it is necessary to optimize the process results, the magnet assembly cannot be adjusted in position accordingly, the expected effect cannot be achieved, and ultimately a satisfactory process result cannot be obtained. Utility Model Content

[0006] The utility model aims to solve at least one of the technical problems existing in the prior art, and proposes a process chamber and a semiconductor process equipment, which can drive the magnet structure to move in different directions by adjusting the components, so that the position of the magnet structure is adjustable, thereby solving the problem that the magnet position cannot be adjusted in the related technology.

[0007] In order to achieve the purpose of the utility model, a process chamber is provided, including a cavity, a process base and a magnetic assembly, the process base has a carrying surface for carrying a wafer, and the magnetic assembly is arranged around the cavity; the magnetic assembly includes a magnet structure and an adjustment assembly connected to the magnet structure, the adjustment assembly is used to drive the magnet structure to move along a first preset direction, a second preset direction and a third preset direction; wherein the first preset direction, the second preset direction and the third preset direction are perpendicular to each other; any direction among the first preset direction, the second preset direction and the third preset direction is perpendicular to the carrying surface.

[0008] In some embodiments, the adjustment component includes a first adjustment member, a second adjustment member and a third adjustment member connected in sequence, and the third adjustment member is connected to the magnet structure; wherein the first adjustment member is used to drive the second adjustment member, the third adjustment member and the magnet structure to move along a first preset direction; the second adjustment member is used to drive the third adjustment member and the magnet structure to move along a second preset direction together; the third adjustment member is used to drive the magnet structure to move along a third preset direction; the first preset direction is perpendicular to the bearing surface.

[0009] In some embodiments, the adjustment assembly includes multiple first adjustment members, multiple second adjustment members, and multiple third adjustment members arranged along the same circumferential intervals; the number of the multiple first adjustment members, the multiple second adjustment members, and the multiple third adjustment members are the same, and are connected in sequence in a one-to-one correspondence.

[0010] In some embodiments, the adjustment assembly includes a plurality of first adjustment members, a plurality of second adjustment members, and a plurality of third adjustment members arranged along the same circumferential intervals; the magnetic assembly also includes an annular connecting plate, and two opposite annular surfaces on the annular connecting plate are respectively connected to the plurality of first adjustment members and the plurality of second adjustment members, and the plurality of first adjustment members are used to drive the annular connecting plate to drive the second adjustment members, the third adjustment members, and the magnet structure to move along a first preset direction.

[0011] In some embodiments, the number of the plurality of first adjusting members, the plurality of second adjusting members, and the plurality of third adjusting members are all four, which are evenly distributed along the same circumference and symmetrically arranged relative to the axis of the bearing surface.

[0012] In some embodiments, along the radial direction of the bearing surface, the cavity has a mounting portion protruding outward, and the mounting portion has a mounting hole that penetrates its thickness. The magnetic assembly also includes a connecting member and a linear bearing. One end of the connecting member is connected to the first adjusting member, and the other end passes through the mounting hole to be connected to the second adjusting member. The linear bearing is arranged in the mounting hole and is located between the hole wall of the mounting hole and the connecting member.

[0013] In some embodiments, the first adjusting member includes a first driving portion, a first guide rail and a first slider; wherein the first guide rail is arranged on the mounting portion and extends along a first preset direction, the first slider is movably arranged on the first guide rail, one end of the connecting member is connected to the first slider, and the first driving portion is used to drive the first slider and the connecting member to move along the first preset direction.

[0014] In some embodiments, the second adjusting member includes a second driving portion, a second guide rail and a second slider; wherein the second guide rail is extended along a second preset direction, the second slider is movably disposed on the second guide rail, and the third adjusting member is disposed on the second slider; the second driving portion is used to drive the second slider to move along the second preset direction; and / or the third adjusting member includes a third driving portion, a third guide rail and a third slider; wherein the third guide rail is extended along a third preset direction, the third slider is movably disposed on the third guide rail, and the magnet structure is disposed on the third slider; the third driving portion is used to drive the magnet structure to move along the third preset direction.

[0015] In some embodiments, a mounting position for the target material is provided on the top of the cavity, and the process chamber further includes an upper liner and a lower liner spaced apart from each other on the inner wall of the cavity.

[0016] The utility model also provides a semiconductor process equipment, comprising the above process chamber.

[0017] The utility model has the following beneficial effects:

[0018] In the process chamber disclosed in the present invention, the adjustment component in the magnetic component can drive the magnetic structure to move arbitrarily in three degrees of freedom according to specific process requirements, thereby realizing the adjustable position of the magnetic structure. The disclosed embodiment can be flexibly adjusted according to different process conditions to adjust the magnetic field in the chamber in real time, thereby optimizing the final process result, so that a uniform thin film is deposited on the wafer surface.

[0019] Other objects and features of the present invention will become clear by reading the specification, claims and drawings of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0021] Figure 1 It is a structural schematic diagram of a process chamber in the related art.

[0022] Figure 2 yes Figure 1 The movement trajectory of copper ions inside the process chamber.

[0023] Figure 3It is a structural schematic diagram of a process chamber according to an embodiment of the utility model.

[0024] Figure 4 It is a top view of the magnetic assembly according to the embodiment of the present utility model.

[0025] Figure 5 It is a structural schematic diagram of the magnetic assembly of the embodiment of the utility model.

[0026] Figure 6 It is an exploded view of the second adjusting member and the third adjusting member of the adjusting assembly according to the embodiment of the utility model.

[0027] Figure 7 It is a structural schematic diagram of the magnet structure of the first embodiment of the utility model. And

[0028] Figure 8 It is a structural schematic diagram of the magnet structure of the second embodiment of the utility model.

[0029] Description of main component symbols:

[0030] 1. Magnetron; 2. Target; 3. First magnet component; 4. Second magnet component; 5. Third magnet component; 6. Fourth magnet component; 7. Wafer;

[0031] 20. chamber; 21. first mounting member; 21a. mounting portion; 22. second mounting member; 23. target material; 30. process base; 40. lifting device; 51. deposition ring; 52. blocking ring; 53. lower lining; 54. upper lining; 60. insulating ring;

[0032] 100, magnet structure; 110, annular frame; 111, first annular plate; 112, second annular plate; 120, cylindrical magnet; 130, coil; 131, first end; 132, second end;

[0033] 200, adjustment component;

[0034] 210, first adjusting member; 211, first driving unit; 212, first guide rail; 213, first sliding block;

[0035] 220, second adjusting member; 221, second driving unit; 222, second guide rail; 223, second slider; 224, second bracket;

[0036] 230, third adjusting member; 231, third driving unit; 232, third guide rail; 233, third sliding block; 234, third bracket;

[0037] 300. annular connecting plate; 400. linear bearing; 500. connecting piece. DETAILED DESCRIPTION

[0038] The embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0039] The process chamber capable of performing the PVD process includes a cavity, a magnetron 1 and a target material 2 arranged in the cavity. A wafer 7 is arranged in the cavity. The magnetron 1 is used to load a magnetic field intersecting with the electric field between the wafer 7 and the target material 2 to limit the movement range of the electrons and extend the movement trajectory of the electrons, so that the electrons ionize the argon atoms to the maximum extent to form argon ions, and the argon ions bombard the surface of the target material 2 and then cause the target material 2 to separate from the surface of the target material 2 in the state of metal atoms or ions.

[0040] When the target material 2 is made of copper, after the copper target material 2 is powered on, the argon ions in the plasma are attracted by the negative charge of the cathode and bombard the copper target material 2. Copper atoms and copper ions are simultaneously generated on the surface of the bombarded copper target material 2. The copper atoms and copper ions gradually fall down and finally land on the surface of the wafer 7, forming a copper film on the surface of the wafer 7.

[0041] It can be seen that the distribution of copper ions on the surface of the wafer 7 plays a crucial role in the uniformity of the copper film deposited on the surface of the wafer 7. The more uniform the copper ions are distributed on the surface of the wafer, the more uniform the copper film is.

[0042] Since the magnetic field can change the movement trajectory of ions, in order to better control the movement trajectory of copper ions, a magnet assembly is arranged outside the cavity in the related art, so as to provide a magnetic field environment in the cavity and guide the falling trajectory of copper ions. In other words, the distribution of copper ions above the surface of wafer 7 plays a crucial role in affecting the uniformity of the copper film deposited on the surface of wafer 7; and the position of the magnet assembly that can provide a magnetic field directly affects the distribution of copper ions above the surface of wafer 7.

[0043] The magnet assembly includes a first magnet component 3, a second magnet component 4, a third magnet component 5 and a fourth magnet component 6. For details, see Figure 1 The first magnet 3, the second magnet 4, the third magnet 5 and the fourth magnet 6 are located at different positions, and will form an interactive electromagnetic field inside the cavity to constrain the copper ions at different positions, thereby affecting the falling trajectory of the copper ions, so that the copper ions move downward as vertically as possible.

[0044] Magnetic fields at different positions will have different confinement effects on copper ions. The effect of placing multiple magnets of the magnet assembly at different positions on the distribution of copper ions on the surface of the wafer can be seen in detail. Figure 2.

[0045] However, in the related art, after the position of the magnet assembly relative to the cavity is determined, the magnet assembly is directly fixed to the cavity, and the position of the magnet assembly on the cavity cannot be adjusted after the connection. For a process chamber that has been designed and assembled, if the position of the magnetic field in the cavity needs to be adjusted, the only way is to redesign the mounting parts (the mounting parts are used to mount the magnet assembly on the cavity) and adjust the mounting position of the magnet assembly on the cavity. The entire design and processing cycle is long, and due to the cumbersome installation process, continuous adjustment cannot be achieved in the process.

[0046] In order to solve the above technical problems existing in the related art, the present disclosure provides a process chamber. The process chamber includes a chamber body 20, a process base 30 and a magnetic assembly. For details, see Figure 3 . The magnetic assembly is arranged around the outside of the cavity 20. The magnetic assembly includes a magnetic structure 100 and an adjustment assembly 200, and the adjustment assembly 200 is connected to the magnetic structure 100. The process base 30 is used to carry the wafer. The magnetic structure 100 is used to generate a magnetic field, and the magnetic structure 100 can be used to constrain at a target position and make the sputtered ions in the process chamber uniformly deposited on the surface of the wafer. The adjustment assembly 200 can drive the magnetic structure 100 to move until the magnetic structure 100 reaches the target position. Optionally, the adjustment assembly 200 is used to drive the magnetic structure 100 to move along a first preset direction, a second preset direction, and a third preset direction. Among them, the first preset direction, the second preset direction, and the third preset direction are perpendicular to each other; any direction of the first preset direction, the second preset direction, and the third preset direction is perpendicular to the carrying surface. In this embodiment, the adjustment assembly 200 changes the position of the magnetic field by moving the position of the magnetic structure 100, thereby solving the above-mentioned problem caused by the non-adjustable position of the magnetic field in the related art.

[0047] Optionally, the chamber 20 may include a first mounting member 21 and a second mounting member 22 connected to the first mounting member 21. The first mounting member 21 and the second mounting member 22 can not only form a process environment, but also be installed for other structures. The target 23 is connected to the second mounting member 22 through an insulating ring 60 to produce copper ions and copper atoms after being bombarded. Since the target 23 is powered on during the sputtering process, the insulating ring 60 is used to insulate between the second mounting member 22 and the target 23 to prevent the second mounting member 22 from conducting electricity. The material of the insulating ring 60 may be a ceramic material.

[0048] In some embodiments, a mounting position for the target 23 is provided at the top of the chamber 20, and the process chamber further comprises an upper liner 54 and a lower liner 53 spaced apart on the inner wall of the chamber 20. Optionally, the deposition ring 51, the barrier ring 52, the lower liner 53 and the upper liner 54 are all disposed on the second mounting member 22 to form a process environment together.

[0049] The process base 30 is disposed in the chamber 20, and the process base 30 has a bearing surface for bearing the wafer, so that the wafer can be processed on the process base 30. Optionally, a lifting device 40 is connected below the process base 30, and the lifting device 40 can be movably connected to the first mounting member 21 to drive the process base 30 to move together.

[0050] Specifically, the magnetic assembly is disposed outside the cavity 20 to form a magnetic field in the cavity 20 .

[0051] The adjustment component 200 in the embodiment of the present disclosure can drive the magnet structure 100 to move arbitrarily in three degrees of freedom according to specific process requirements, thereby realizing the adjustable position of the magnet structure 100. The embodiment of the present disclosure can be flexibly adjusted according to different process conditions to adjust the magnetic field in the cavity 20 in real time, thereby optimizing the final process result, so that a uniform thin film is deposited on the wafer surface.

[0052] The adjustment assembly 200 includes a first adjustment member 210, a second adjustment member 220 and a third adjustment member 230 connected in sequence. The third adjustment member 230 is connected to the magnet structure 100. For details, see Figures 3 to 5 . Among them, the first adjusting member 210 is used to drive the second adjusting member 220, the third adjusting member 230 and the magnet structure 100 to move along the first preset direction, and the magnet structure 100 can be driven to move along the first preset direction by the first adjusting member 210. The second adjusting member 220 is used to drive the third adjusting member 230 and the magnet structure 100 to move along the second preset direction together, and the magnet structure 100 can be driven to move along the second preset direction by the second adjusting member 220. The third adjusting member 230 is used to drive the magnet structure 100 to move along the third preset direction. Specifically, the first preset direction is perpendicular to the bearing surface.

[0053] It can be understood that the adjustment assembly 200 can drive the magnet structure 100 to move to the target position along the first preset direction, the second preset direction and the third preset direction.

[0054] It should be noted that in the process of using the adjustment component 200 to drive the magnet structure 100 to move to the target position, only any one of the first adjustment member 210, the second adjustment member 220 and the third adjustment member 230, or any two or all three of them can work, depending on the path of the magnet structure 100 from the target distance.

[0055] In order to better understand the embodiments of the present disclosure, Figure 3 and Figure 4 A spatial rectangular coordinate system is established together, in which the X-axis, the Y-axis and the Z-axis are perpendicular to each other. In some embodiments, the first preset direction is Figure 3 and Figure 4 The Y axis in the second preset direction is Figure 3 and Figure 4 The X-axis in the third preset direction is Figure 3 and Figure 4 In other words, the adjustment component 200 in the above embodiment is used to drive the magnet structure 100 along the Z axis. Figure 3 and Figure 4 The Y axis in Figure 3 and Figure 4 The X-axis and Figure 3 and Figure 4 Move the Z axis in to the target position.

[0056] In order to better explain the above embodiments, two embodiments in which the adjustment component 200 is required to drive the magnetic structure 100 to move are described below by way of example. However, it is understandable that there are other situations in which the adjustment component 200 is required to drive the magnetic structure 100, and this application will not cite examples one by one.

[0057] Example 1

[0058] In the thin film deposition process, the process result is eccentric, that is, the concentric circles of the deposited film thickness on the wafer are not concentric with the wafer.

[0059] At this time, the magnetic structure 100 can be driven to move in the horizontal direction (ie, the X direction or the Z direction) by the adjustment component 200 to adjust the distribution of copper ions on the surface of the wafer until the process structure is concentric.

[0060] Example 2

[0061] During the test phase, it was found that the thickness of the deposited film on the wafer was uneven from the center to the edge.

[0062] Since the magnetic field generated by the magnet structure 100 is not vertically downward in the vertical direction (ie, the Y direction), adjusting the vertical position of the magnet structure 100 will change the direction of the magnetic flux lines above the wafer, thereby affecting the distribution of copper ions on the wafer.

[0063] At this time, the magnet structure 100 can be driven to move in the vertical direction (ie, the Y direction) by adjusting the component 200 to adjust the magnet structure 100 to the optimal position according to the final process result.

[0064] The present disclosure can determine the distribution of copper ions according to different process results, and then determine whether the magnetic structure 100 is located at the target position according to the distribution of copper ions. If the magnetic structure 100 is located at the target position, continuous process processing can be performed; if the magnetic structure 100 is not located at the target position, the adjustment component 200 is used to drive the magnetic structure 100 to the target position.

[0065] There are many embodiments regarding the number and corresponding relationship of the first adjusting member 210, the second adjusting member 220 and the third adjusting member 230 in the adjusting assembly 200, and two embodiments are used as examples below. However, it is understandable that there are other embodiments, which are not listed one by one in this application.

[0066] Example 1

[0067] The adjustment assembly 200 includes a plurality of first adjustment members 210, a plurality of second adjustment members 220 and a plurality of third adjustment members 230 arranged along the same circumferential interval; the plurality of first adjustment members 210, the plurality of second adjustment members 220 and the plurality of third adjustment members 230 are the same in number and are connected in sequence in a one-to-one correspondence.

[0068] The plurality of first adjusting members 210 are used to jointly drive the magnet structure 100 to move along a first preset direction, so that the magnet structure 100 can move along the first preset direction. The plurality of second adjusting members 220 are used to jointly drive the magnet structure 100 to move along a second preset direction, so that the magnet structure 100 can move along the second preset direction. The plurality of third adjusting members 230 are used to jointly drive the magnet structure 100 to move along a third preset direction, so that the magnet structure 100 can move along the third preset direction.

[0069] Specifically, the number of the plurality of first adjustment members 210, the plurality of second adjustment members 220, and the plurality of third adjustment members 230 are all four, which are evenly distributed along the same circumference and symmetrically arranged relative to the axis of the bearing surface. In other words, the spacing between any two adjacent first adjustment members 210 is the same, the spacing between any two adjacent second adjustment members 220 is the same, and the spacing between any two adjacent third adjustment members 230 is the same.

[0070] Specifically, the first adjusting member 210 includes a first driving portion 211, a first guide rail 212 and a first slider 213. The first guide rail 212 is disposed on the mounting portion 21a and extends along a first preset direction, the first slider 213 is movably disposed on the first guide rail 212, one end of the connecting member is connected to the first slider 213, and the first driving portion 211 is used to drive the first slider 213 and the connecting member to move along the first preset direction.

[0071] Optionally, the first driving part 211 may be a stepping motor, and the first guide rail 212 may be a lead screw guide rail.

[0072] Optionally, the second adjusting member 220 includes a second driving portion 221, a second guide rail 222 and a second slider 223. For details, see Figure 6The second guide rail 222 is extended along the second preset direction, the second slider 223 is movably arranged on the second guide rail 222, and the third adjusting member 230 is arranged on the second slider 223; the second driving part 221 is used to drive the second slider 223 to move along the second preset direction. The second adjusting member 220 is arranged on the first slider 213, so that the second adjusting member 220 moves along the first preset direction with the first slider 213 driven by the first driving part 211. Optionally, the third adjusting member 230 includes a third driving part 231, a third guide rail 232 and a third slider 233. For details, please refer to Figure 6 The third guide rail 232 is extended along the third preset direction, the third slider 233 is movably arranged on the third guide rail 232, and the magnet structure 100 is arranged on the third slider 233, so that the magnet structure 100 moves along the third preset direction with the third slider 233 on the driving member of the third driving part 231. The third driving part 231 is used to drive the magnet structure 100 to move along the third preset direction. The third adjusting member 230 is arranged on the second slider 223, so that the third adjusting member 230 moves along the second preset direction with the driving member of the second driving part 221 with the second slider 223.

[0073] Optionally, the second driving part 221 may be a stepping motor, and the second guide rail 222 may be a screw guide rail. In some embodiments, the third driving part 231 may be a stepping motor, and the third guide rail 232 may be a screw guide rail.

[0074] Specifically, the second adjusting member 220 further includes a second bracket 224, and the third driving part 231 or the third guide rail 232 is fixedly disposed on the second bracket 224. The third adjusting member 230 further includes a third bracket 234, and the magnet structure 100 is fixedly disposed on the third bracket 234.

[0075] Example 2

[0076] The adjustment assembly 200 includes a plurality of first adjustment members 210, a plurality of second adjustment members 220 and a plurality of third adjustment members 230 arranged along the same circumferential interval; the magnetic assembly also includes an annular connecting plate 300, and two opposite annular surfaces on the annular connecting plate 300 are respectively connected to the plurality of first adjustment members 210 and the plurality of second adjustment members 220, and the plurality of first adjustment members 210 are used to drive the annular connecting plate 300 to drive the second adjustment members 220, the third adjustment members 230 and the magnet structure 100 to move along a first preset direction.

[0077] See also Figures 3 to 6, the magnetic assembly further includes an annular connecting plate 300, which is used to connect the first adjusting members and the second adjusting members in the adjusting assembly 200. The annular connecting plate 300 is disposed between the first adjusting member 210 and the second adjusting member 220. In other words, the first adjusting member 210 is located below the annular connecting plate 300, and the second adjusting member 220 and the third adjusting member 230 are located above the annular connecting plate 300. It should be noted that in the embodiment in which the magnetic assembly includes the annular connecting plate 300, the number of the plurality of first adjusting members 210 and the plurality of second adjusting members 220 may be the same or different.

[0078] It should be noted that, since the magnetic assembly of this embodiment needs to be installed outside the cavity 20, in order to avoid the cavity 20, the annular connecting plate 300 can be set as an annular plate with a hollow area, so that the cavity 20 is located in the hollow area.

[0079] See also Figure 3 , the magnetic assembly further includes a connector 500, which is fixedly connected to the first slider 213 and fixedly connected to the lower surface of the annular connecting plate 300. Similarly, in order to avoid the cavity 20, the connector 500 can be set as an annular plate with a hollow area, so that the cavity 20 is located in the hollow area. The cross-section of the annular connecting plate 300 on a plane parallel to the first preset direction is T-shaped to increase the contact area with the annular connecting plate 300 and improve the reliability of the connection.

[0080] Figure 7 1 is a schematic structural diagram of a magnet structure 100 according to a first embodiment of the present invention. Figure 7 The magnet structure 100 includes an annular frame 110 and a plurality of cylindrical magnets 120. The plurality of cylindrical magnets 120 are arranged at intervals along the circumference of the annular frame 110. The annular frame 110 includes a first annular plate 111 and a second annular plate 112. The first annular plate 111 and the second annular plate 112 are spaced apart from each other along the axial direction of the reaction chamber, and the first annular plate 111 and the second annular plate 112 are coaxially arranged. Each cylindrical magnet 120 is arranged between the first annular plate 111 and the second annular plate 112, and the first annular plate 111 or the second annular plate 112 is connected to the adjustment assembly 200.

[0081] In this embodiment, a fixed number of cylindrical magnets 120 (eg, permanent magnets) are fixed in an annular frame 110 to form a magnet structure 100 .

[0082] Figure 8 1 is a schematic structural diagram of a magnet structure 100 according to a second embodiment of the present invention. Figure 8The magnet structure 100 includes an annular frame 110 and a coil 130, wherein the two ends of the coil 130 are respectively a first end 131 and a second end 132. The coil 130 with a fixed number of turns can be wound on the annular frame 110, and a current is applied to the first end 131 or the second end 132 of the coil 130 to generate a magnetic field.

[0083] It should be noted that Figure 7 The magnet structure 100 (edge ​​magnet) shown and Figure 8 The magnet structure 100 (electromagnet) shown can provide a magnetic field in the cavity 20 to constrain the movement of copper ions. In addition to the structural differences, the difference is that the edge magnet can provide a larger magnetic field strength in an economical way, but the magnetic field strength it provides cannot be adjusted; the electromagnet can adjust the magnetic field strength by adjusting the magnitude and direction of the current, but when the process requires a larger magnetic field strength, the electromagnet has a large number of coil turns and will generate a lot of heat, and the price of the electromagnet itself and the supporting power supply is relatively expensive. In a specific embodiment, the above two structures can be adaptively selected according to actual conditions to achieve better process results.

[0084] In some embodiments, the process chamber includes a chamber 20 and a magnetic assembly of the above embodiment. The magnetic assembly is arranged around the outside of the chamber 20, and the chamber 20 has a mounting surface for mounting the magnetic assembly. The magnetic assembly is used to provide a magnetic field in the chamber 20 so that the sputtered ions can be uniformly deposited on the surface of the wafer under the action of the magnetic field.

[0085] See also Figure 3 The cavity 20 includes a first mounting member 21, and the first mounting member 21 includes a mounting portion 21a having a mounting surface. Specifically, along the radial direction of the bearing surface, the cavity 20 has a mounting portion 21a protruding outward. The mounting portion 21a has a mounting hole that runs through its thickness. The magnetic assembly also includes a connector 500 and a linear bearing 400. One end of the connector 500 is connected to the first adjustment member 210, and the other end passes through the mounting hole to connect to the second adjustment member 220. The linear bearing 400 is disposed in the mounting hole and is located between the hole wall of the mounting hole and the connector 500.

[0086] Specifically, the mounting portion 21a may be a flange, that is, the magnetic assembly is mounted on the flange.

[0087] For details, please refer to Figure 3 , one end of the first guide rail 212 along the first preset direction is fixedly connected to the mounting portion 21a, and the first slider 213 is connected to the annular connecting plate 300 through a connecting member 500. The connecting member 500 is arranged to penetrate the thickness of the mounting portion 21a. The connecting member 500 and the mounting portion 21a are connected by a linear bearing 400, so that the connecting member 500 can be movably connected to the mounting portion 21a.

[0088] In some embodiments, the semiconductor process equipment includes the process chamber of the above embodiment. The adjustment component 200 of the semiconductor process equipment in the disclosed embodiment can drive the magnet structure 100 to move arbitrarily in three degrees of freedom according to specific process requirements, thereby realizing the adjustable position of the magnet structure. The disclosed embodiment can be flexibly adjusted according to different process conditions to adjust the magnetic field in the cavity 20 in real time, thereby optimizing the final process result, so that a uniform thin film is deposited on the surface of the wafer.

[0089] In the description of the present utility model, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present utility model. In addition, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present utility model, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.

[0090] In the description of the present utility model, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or mutual communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present utility model can be understood according to specific circumstances.

[0091] In the description of the present utility model, unless otherwise clearly stipulated and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0092] The disclosure below provides many different embodiments or examples for realizing different structures of the utility model. In order to simplify the disclosure of the utility model, the components and settings of specific examples are described below. Of course, they are merely examples, and the purpose is not to limit the utility model. In addition, the utility model may repeat reference numbers and / or reference letters in different examples, and such repetition is for the purpose of simplification and clarity, and does not itself indicate the relationship between the various embodiments and / or settings discussed. In addition, the utility model provides various specific examples of processes and materials, but those of ordinary skill in the art may be aware of the application of other processes and / or the use of other materials.

[0093] In the description of this specification, the description with reference to the terms "one embodiment", "certain embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiments or examples are included in at least one embodiment or example of the utility model. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0094] It is understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A process chamber, characterized in that: The invention comprises a cavity, a process base and a magnetic assembly, wherein the process base has a bearing surface for bearing a wafer, and the magnetic assembly is arranged around the cavity; the magnetic assembly comprises a magnetic structure and an adjustment assembly connected to the magnetic structure, and the adjustment assembly is used to drive the magnetic structure to move along a first preset direction, a second preset direction and a third preset direction; Wherein, the first preset direction, the second preset direction and the third preset direction are perpendicular to each other; Any direction among the first preset direction, the second preset direction and the third preset direction is perpendicular to the carrying surface.

2. The process chamber according to claim 1, characterized in that: The adjusting assembly comprises a first adjusting member, a second adjusting member and a third adjusting member which are connected in sequence, and the third adjusting member is connected to the magnet structure; Wherein, the first adjusting member is used to drive the second adjusting member, the third adjusting member and the magnet structure to move along the first preset direction; The second adjusting member is used to drive the third adjusting member and the magnetic structure to move along the second preset direction; The third adjusting member is used to drive the magnet structure to move along the third preset direction; The first preset direction is perpendicular to the carrying surface.

3. The process chamber according to claim 2, characterized in that: The adjustment assembly comprises a plurality of first adjustment members, a plurality of second adjustment members and a plurality of third adjustment members arranged at intervals along the same circumference; The number of the plurality of first adjusting members, the plurality of the second adjusting members and the plurality of the third adjusting members are the same and are connected in sequence in a one-to-one correspondence.

4. The process chamber according to claim 2, characterized in that: The adjustment assembly comprises a plurality of first adjustment members, a plurality of second adjustment members and a plurality of third adjustment members arranged at intervals along the same circumference; The magnetic assembly also includes an annular connecting plate, and two opposite annular surfaces on the annular connecting plate are respectively connected to multiple first adjusting members and multiple second adjusting members, and the multiple first adjusting members are used to drive the annular connecting plate to drive the second adjusting member, the third adjusting member and the magnet structure to move along the first preset direction.

5. The process chamber according to claim 3 or 4, characterized in that: The number of the first adjusting members, the second adjusting members and the third adjusting members are all four, which are evenly distributed along the same circumference and symmetrically arranged relative to the axis of the bearing surface.

6. The process chamber according to any one of claims 2 to 4, characterized in that: Along the radial direction of the bearing surface, the cavity has a mounting portion protruding outward, and the mounting portion has a mounting hole that penetrates its thickness. The magnetic assembly also includes a connecting piece and a linear bearing. One end of the connecting piece is connected to the first adjusting piece, and the other end passes through the mounting hole to be connected to the second adjusting piece. The linear bearing is arranged in the mounting hole and is located between the hole wall of the mounting hole and the connecting piece.

7. The process chamber according to claim 6, characterized in that: The first adjusting member includes a first driving portion, a first guide rail and a first slider; wherein, the first guide rail is arranged on the mounting portion and extends along the first preset direction, the first slider is movably arranged on the first guide rail, one end of the connecting member is connected to the first slider, and the first driving portion is used to drive the first slider and the connecting member to move along the first preset direction.

8. The process chamber according to claim 7, characterized in that: The second adjusting member includes a second driving part, a second guide rail and a second slider; wherein the second guide rail is extended along the second preset direction, the second slider is movably arranged on the second guide rail, and the third adjusting member is arranged on the second slider; the second driving part is used to drive the second slider to move along the second preset direction; and / or The third adjusting member includes a third driving portion, a third guide rail and a third slider; wherein the third guide rail is extended along the third preset direction, the third slider is movably arranged on the third guide rail, and the magnet structure is arranged on the third slider; the third driving portion is used to drive the magnet structure to move along the third preset direction.

9. The process chamber according to claim 1, characterized in that: A mounting position for a target material is arranged on the top of the cavity, and the process chamber further comprises an upper liner and a lower liner which are arranged at intervals on the inner wall of the cavity.

10. A semiconductor process equipment, characterized in that: A process chamber comprising any one of claims 1 to 9.

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