Semiconductor process equipment

Abstract

The utility model provides semiconductor process equipment, which comprises a process chamber, a plurality of crystal boats, two groups of air inlet devices and two groups of air exhaust devices, the air inlet devices and the air exhaust devices are oppositely arranged, the process chamber is provided with an annular cavity, and an inner peripheral wall and an outer peripheral wall which are respectively arranged on the inner periphery and the outer periphery of the annular cavity; the plurality of wafer boats are provided with a plurality of bearing parts distributed along the axis, and the bearing parts are used for bearing wafers; and the plurality of crystal boats are circumferentially distributed in the annular cavity around the axis of the annular cavity and can rotate around the axis of the annular cavity to a process gas flow field formed between the gas inlet device and the gas exhaust device which are oppositely arranged, so that process gas is alternately deposited on the wafer. The semiconductor process equipment provided by the utility model can accommodate a plurality of crystal boats at the same time, so that energy waste is effectively reduced, and the occupied space of the equipment is reduced.

Description

Technical Field

[0001] The utility model belongs to the field of semiconductor heat treatment, and in particular relates to semiconductor process equipment. Background Art

[0002] At present, with the reduction of the key size of integrated circuits, atomic layer deposition technology (ALD) has become the mainstream process of thin film deposition technology with its good uniformity and excellent step coverage. The existing vertical atomic layer deposition equipment usually includes a quartz tube and a wafer boat arranged in the quartz tube. Specifically, the working principle of the existing vertical atomic layer deposition equipment is: different process gases are alternately introduced into the quartz tube, and the quartz tube is heated to cause a decomposition reaction on the surface of the wafer under high temperature, thereby depositing at the speed of an atomic layer.

[0003] However, a single wafer boat can usually only accommodate 100 wafers, which means that the existing vertical atomic layer deposition equipment can only process a maximum of 100 wafers at the same time, which in turn results in the disadvantages of small number of processed wafers and waste of energy. Utility Model Content

[0004] The utility model at least partially solves the problem that the number of wafers that can be processed simultaneously by existing semiconductor process equipment is small, and provides a semiconductor process equipment.

[0005] The present invention provides a semiconductor process equipment, which includes:

[0006] A process chamber comprises an annular cavity, and an inner peripheral wall and an outer peripheral wall respectively arranged on the inner periphery and the outer periphery of the annular cavity;

[0007] A plurality of wafer boats, which are circumferentially distributed in the annular cavity around the axis of the annular cavity and are rotatable around the axis of the annular cavity;

[0008] Two groups of air inlet devices are symmetrically arranged with the axis of the annular cavity as an axis; each group of the air inlet devices has a plurality of first air ports connected to the annular cavity, and the plurality of first air ports are fixed on the inner side of the outer peripheral wall; the two groups of air inlet devices are used to continuously deliver two process gases to the process chamber respectively;

[0009] Two groups of exhaust devices are symmetrically arranged with the axis of the annular cavity as the axis; each group of the exhaust devices has a plurality of second air ports connected to the annular cavity, the plurality of second air ports are fixed on the outside of the inner wall, and the second air ports of the two groups of exhaust devices are respectively opposite to the two groups of air intake devices; the exhaust devices are used to continuously discharge the gas inside the annular cavity.

[0010] Optionally, each group of the air intake devices comprises two air intake pipes parallel to the axis of the annular cavity; each of the air intake pipes is fixed on the inner circumferential surface of the outer circumferential wall, and the plurality of first air ports are axially arranged on the surfaces of the plurality of air intake pipes; the air intake pipes of the two groups of the air intake devices are respectively connected to two process gas sources;

[0011] Each group of the exhaust devices includes an exhaust pipe parallel to the axis of the annular cavity; each of the exhaust pipes is fixed on the outer circumferential surface of the inner circumferential wall and is located between the corresponding two intake pipes; a plurality of the second air ports are axially arranged on the surfaces of the plurality of exhaust pipes; and each of the exhaust pipes is connected to an air extraction pump.

[0012] Optionally, it further comprises an annular tray and a top plate; the top plate is located at the top of the inner peripheral wall and the outer peripheral wall; the annular tray is located at the bottom side of all the wafer boats, and is used to carry the wafer boats; the annular tray and the top plate can enclose a process space with the inner peripheral wall and the outer peripheral wall;

[0013] The semiconductor process equipment further includes a first driving device and a plurality of second driving devices; wherein,

[0014] The first driving device is connected to the annular tray and is used to drive the annular tray to rotate around the axis of the annular cavity;

[0015] A plurality of the second driving devices are arranged on the annular tray and are connected to a plurality of the wafer boats in a one-to-one correspondence, and are used to drive each of the wafer boats to rotate around its own axis.

[0016] Optionally, the semiconductor process equipment further comprises an inner heater and an outer heater; the inner heater is located in the central area; the outer heater surrounds the outer side of the annular cavity;

[0017] The inner heater and the outer heater are both used for heating the annular cavity.

[0018] Optionally, in a direction parallel to the bottom surface of the annular cavity, an angle between two connecting lines of the orthographic projection of the exhaust pipe axis and the orthographic projections of two corresponding intake pipe axes is 60°.

[0019] Optionally, the plurality of second air ports are all rectangular.

[0020] Optionally, the semiconductor process equipment further includes an ionization device; the ionization device is disposed on the outside of at least one of the air inlet pipes and can be electrically connected thereto; the ionization device is used to feed radio frequency power into the interior of the air inlet pipe when turned on to ionize the process gas.

[0021] Optionally, each of the wafer boats has a plurality of bearing parts distributed along an axis, and the bearing parts are used to bear wafers; the axis of the wafer boat is parallel to the axis of the annular cavity;

[0022] The plurality of second air ports on each exhaust pipe and the plurality of first air ports on each intake pipe are arranged in one-to-one correspondence with the plurality of supporting parts of each wafer boat in the axial direction.

[0023] Optionally, the internal heater comprises a mounting post and a first heating wire; the mounting post is located in the central area and extends along the axis of the annular cavity; the first heating wire surrounds the outer circumference of the mounting post to radiate heat outward when powered on;

[0024] The external heater comprises a second heating wire; the second heating wire is surrounded on the outer peripheral surface of the outer peripheral wall and is used for radiating heat outward when powered on.

[0025] Optionally, the semiconductor process equipment further includes a furnace shell; the furnace shell surrounds the outer side of the outer peripheral wall of the annular cavity and is spaced apart from the outer peripheral wall of the annular cavity.

[0026] The utility model has the following beneficial effects:

[0027] The semiconductor process equipment provided by the embodiment of the utility model can greatly increase the number of wafer boats that can be accommodated in the process chamber by designing the process chamber to be annular and distributing multiple wafer boats circumferentially in the annular chamber around the axis of the annular chamber. Therefore, compared with the semiconductor process equipment with a single wafer boat, the semiconductor process equipment provided by the embodiment of the utility model has a larger process scale and higher process efficiency, which can reduce process losses, thereby effectively reducing energy waste; moreover, it can also achieve that multiple wafer boats share a set of process equipment, thereby improving the space utilization rate of the equipment. Moreover, the embodiment of the utility model also proposes to set two sets of air intake devices and exhaust devices in the annular chamber, and multiple wafer boats can rotate around the axis of the annular chamber to form two process gas flow fields, and multiple wafer boats can alternately contact with the two process gases, so that the two process gases are alternately deposited on the surface of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 A schematic top view of a semiconductor process equipment provided by an embodiment of the utility model;

[0029] Figure 2 A schematic side view of a semiconductor process equipment provided by an embodiment of the utility model;

[0030] Figure 3 A schematic diagram of the distribution of the air intake duct and the exhaust duct of the semiconductor process equipment provided by the embodiment of the utility model;

[0031] Figure 4A A side view of an exhaust pipe provided in an embodiment of the utility model;

[0032] Figure 4B A front view of an exhaust pipe provided in an embodiment of the utility model;

[0033] Figure 5 A front view of an air intake pipe provided by an embodiment of the utility model;

[0034] Fig. 6A A partial top view schematic diagram of a semiconductor process equipment provided by an embodiment of the utility model;

[0035] Figure 6B A schematic diagram of a corresponding relationship between an intake pipe and an exhaust pipe provided in an embodiment of the utility model;

[0036] Figure 6C A side view schematic diagram of an air intake device provided in an embodiment of the utility model. DETAILED DESCRIPTION

[0037] In order to enable those skilled in the art to better understand the technical solution of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0038] It should be understood that the specific embodiments and drawings described herein are only used to explain the present invention, rather than to limit the present invention.

[0039] It can be understood that, in the absence of conflict, the various embodiments of the present invention and the various features therein can be combined with each other.

[0040] It can be understood that, for the convenience of description, the drawings of the present invention only show the parts related to the embodiments of the present invention, while the parts unrelated to the embodiments of the present invention are not shown in the drawings.

[0041] It is understandable that, in the absence of conflict, the functions and steps marked in the flowcharts and block diagrams of the embodiments of the present utility model may occur in an order different from that marked in the drawings.

[0042] It is understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

[0043] Please refer to Figure 1 and Figure 2The present embodiment provides a semiconductor process equipment, which includes a process chamber 1, a plurality of wafer boats 2, two groups of air intake devices 5 and two groups of exhaust devices 6. The process chamber 1 has an annular cavity and an inner peripheral wall 11 and an outer peripheral wall 12 respectively arranged on the inner periphery and the outer periphery of the annular cavity; specifically, the annular cavity is used for performing a heat treatment process, for example.

[0044] like Figure 1 and Figure 2 As shown, the plurality of wafer boats 2 have a plurality of supporting parts 21 distributed along the axis, and the supporting parts 21 are used to support wafers; the plurality of wafer boats 2 are circumferentially distributed in the annular cavity around the axis of the annular cavity, and the axes of the wafer boats 2 are all arranged parallel to the axis of the annular cavity.

[0045] like Figure 1 As shown, the annular cavity proposed in this embodiment can accommodate multiple wafer boats 2, for example, 8 wafer boats 2, and thus more wafers, for example, 800 wafers, can be processed at the same time. When processing the same number of wafers, multiple existing single-wafer boat semiconductor process equipment are required to carry out the process. In other words, compared with the existing semiconductor process equipment that can only accommodate one wafer boat, the semiconductor process equipment provided in this embodiment can process more wafers at the same time, and can effectively reduce energy waste and improve the space utilization rate of the equipment. In other words, it can improve the production capacity of wafers and the utilization rate of energy.

[0046] The two groups of air intake devices 5 are symmetrically arranged with the axis of the annular cavity as the axis. Specifically, each group of air intake devices 5 has a plurality of first air ports connected to the annular cavity, and the plurality of first air ports are fixed on the inner side of the outer peripheral wall; the two groups of air intake devices 5 are used to respectively continuously deliver two process gases to the process chamber. The two groups of exhaust devices 6 are symmetrically arranged with the axis of the annular cavity as the axis. Specifically, each group of exhaust devices 6 has a plurality of second air ports connected to the annular cavity, and the plurality of second air ports are fixed on the outer side of the inner peripheral wall, and the second air ports of the two groups of exhaust devices 6 are respectively opposite to the two groups of air intake devices 5; the exhaust devices 6 are used to continuously discharge the gas inside the annular cavity. In this way, the first air ports for air intake and the second air ports for exhaust are arranged opposite to each other, and a stable process gas flow field can be formed between the corresponding first air ports and the second air ports. Since the number of air intake devices 5 and exhaust devices 6 are both two groups, two different process gas flow fields can be formed inside the annular cavity by respectively delivering different process gases through the two groups of first air ports, and, as Figure 1 and Figure 2 As shown, since the two process gas flow fields are axially symmetrically arranged with the axis of the annular cavity, that is, the distance between the two in the annular cavity is as far as possible, the two process gas flow fields will not interfere with each other, thereby avoiding the two process gases directly mixing and reacting in the cavity and causing a decrease in process efficiency.

[0047] On this basis, the plurality of wafer boats 2 can rotate around the axis of the annular cavity, so that the plurality of wafer boats 2 can rotate relative to the inner peripheral wall 11 and the outer peripheral wall 12. In this way, during the rotation of the plurality of wafer boats 2 in the annular chamber 1, each wafer boat 2 can pass through the two process gas flow fields, so that the wafers carried on the wafer boat 2 can contact with the two process gases alternately, so that the two process gases are alternately deposited on the wafer surface.

[0048] Moreover, a fixed crystal boat is usually used in existing semiconductor process equipment, so the existing semiconductor process equipment must use a pulsed air intake method to alternately introduce two process gases. The airflow stability of the airflow field generated by the pulsed air intake is much lower than the airflow stability of the airflow field of the continuous air intake, and it is easy to cause defects such as eccentric films or annular films. The air intake device 5 in this embodiment can continuously intake air and the exhaust device 6 can continuously exhaust air, and then they can cooperate with each other to form a stable process gas flow field. It can be seen that compared with the pulsed air intake method used in existing semiconductor process equipment, the air intake method proposed in this embodiment is more stable and can reduce the risk of defects such as eccentric films or annular films. In other words, it can improve the uniformity of the thin film formed by the process.

[0049] It is easy to understand that the above two process gases can be selected according to the type of film required by the process. Specifically, taking the silicon nitride deposition process as an example, the process involves two process gases, wherein ammonia is the first process gas and dichlorosilane gas is the second process gas. Accordingly, one of the two groups of gas inlet devices 5 can be used to deliver ammonia to the annular cavity, and the other can be used to deliver dichlorosilane gas to the annular cavity.

[0050] In some embodiments, the semiconductor process equipment further includes an internal heater 4 and an external heater 3. Figure 1 As shown, the inner heater 4 is located in the central area of ​​the annular cavity, that is, in the inner peripheral area of ​​the inner peripheral wall 11, and is used to radiate heat outward to heat the annular cavity; the outer heater 3 surrounds the outer side of the annular cavity, that is, is located on the outer peripheral side of the outer peripheral wall 12, and is used to radiate heat outward to heat the annular cavity. In this way, the inner heater 4 and the outer heater 3 can ensure that both the inner peripheral area and the outer peripheral area in the annular cavity are heated, thereby ensuring that all areas of the annular cavity are heated. Moreover, since multiple wafer boats 2 are distributed in an annular shape along the annular cavity, the inner heater 4 and the outer heater 3 can also ensure that all wafer boats 2 are heated, thereby ensuring that all wafers can be heated everywhere. Moreover, in the actual process, the output power of the inner heater 4 and the outer heater 3 can be controlled to balance the temperature field of the inner peripheral area and the outer peripheral area of ​​the annular cavity, so that the temperature of multiple wafers can be uniformly controlled, thereby improving the consistency of the processing effect of the same batch of wafers.

[0051] In some specific embodiments, the inner heater 4 includes a mounting post 41 and a first heating wire 41; the mounting post 41 is located in the central area of ​​the annular cavity and extends along the axis of the annular cavity; the first heating wire 41 surrounds the outer peripheral surface of the mounting post 41, and is used to radiate heat outward when powered on, so as to heat the inner peripheral area of ​​the annular cavity. The outer heater 3 includes a second heating wire; the second heating wire surrounds the outer peripheral surface of the peripheral wall 12, and is used to radiate heat outward when powered on, so as to heat the outer peripheral area of ​​the annular cavity.

[0052] It should be noted that since the annular cavity space proposed in this embodiment is relatively large, in the actual process, multiple temperature detection devices should be set in the annular cavity to realize real-time monitoring of the temperature conditions at various locations inside the annular cavity, and send the real-time monitoring results to the main control device, so as to improve the detection accuracy of the temperature field inside the annular cavity.

[0053] In some specific embodiments, the inner wall 11 and the outer wall 12 of the process chamber 1 are both made of quartz material to utilize the good heat resistance and corrosion resistance of the quartz material to ensure the service life of the process chamber 1 without interfering with the process.

[0054] In some embodiments, Figure 1 and Figure 3 As shown, each group of air intake devices 5 includes two air intake pipes 51 extending parallel to the axis of the annular cavity; each air intake pipe 51 is fixed on the inner circumferential surface of the annular outer peripheral wall 12, and the above-mentioned multiple first air ports are arranged on the surface of multiple air intake pipes 51 along the axis direction of the air intake pipe. The air intake pipes 51 of the two groups of air intake devices 5 are respectively connected to the two process gas sources, that is, the two pairs of air intake pipes 51 are respectively connected to the two process gas sources, so as to continuously introduce the two process gases into the annular cavity respectively. In some specific embodiments, the port of the air intake pipe can be used as its air intake port to be connected to the process gas source.

[0055] Each set of exhaust pipes 61 includes an exhaust pipe 61 extending parallel to the axis of the annular cavity; a plurality of second gas ports are arranged on the surface of the plurality of exhaust pipes 61 along the axis of the exhaust pipe. Each exhaust pipe 61 is fixed on the outer peripheral surface of the annular inner peripheral wall 11 and is located between the two corresponding inlet pipes 51, so that in the plane direction perpendicular to the annular cavity, the second gas port and the corresponding two first gas ports can form an approximately triangular airflow field, thereby increasing the contact area between the process gas and the wafer when the wafer passes through the airflow field. Figure 3 As shown, each of the exhaust pipes 61 is connected to the air pump 62 to extract the gas inside the annular cavity, so that the byproduct gas generated after the process reaction and the remaining process gas that did not participate in the reaction are discharged. In some specific embodiments, the port of the exhaust pipe can be used as its exhaust port to communicate with the air pump 62.

[0056] Further, in some preferred embodiments, each wafer boat 2 has a plurality of bearing parts distributed along the axis, and the bearing parts are used to bear the wafers; the axis of the wafer boat 2 is parallel to the axis of the annular cavity. The plurality of second air ports of each exhaust pipe 61 and the plurality of first air ports of each air inlet pipe 51 are arranged one-to-one with the plurality of bearing parts 21 of each wafer boat 2 in the axial direction, that is, each bearing part corresponds to one second air port and two second air ports, so as to ensure that a direct-blowing airflow field is formed at each wafer, thereby improving the process effect of each wafer.

[0057] Further, in some embodiments, Fig. 6A and 6B As shown, in the direction parallel to the bottom surface of the annular cavity, the angle between the two connecting lines of the orthographic projection of the axis of the exhaust pipe 61 and the orthographic projection of the axes of the corresponding two air inlet pipes 51 is 60°, so that the axis center of the exhaust pipe 61 and the axis centers of the corresponding two air inlet pipes 51 can roughly form an equilateral triangle; in this way, when the wafer boat 2 rotates to between the exhaust pipe 61 and the corresponding two air inlet pipes 51, a more uniform airflow field can be formed at the surface of each wafer on the wafer boat 2, thereby improving the uniformity of the thin film deposited on the wafer.

[0058] In some preferred embodiments, Figure 4A and Figure 4B As shown (not all first air ports are shown in the figure), the plurality of first air ports on the exhaust pipe 61 are all rectangular. The rectangular first air ports are used for air intake and help to form a stable and uniform airflow field.

[0059] In some embodiments, Figure 5 As shown (not all second air ports are shown in the figure), the multiple second air ports on the air inlet pipe 51 are all circular. Moreover, the center of the circular second air port of the air inlet pipe 51 is flush with the axis of the exhaust pipe 61 and is flush with the center axis of the rectangular first air port on the exhaust pipe 61.

[0060] In some embodiments, Figure 1 As shown, the semiconductor process equipment also includes an ionization device 7; the ionization device 7 is arranged outside of at least one air inlet pipe 51 and can be electrically connected thereto; the ionization device 7 is used to feed radio frequency power into the air inlet pipe 51 when turned on to ionize the process gas.

[0061] In some specific embodiments, Fig. 6A and Figure 6C As shown, the ionization device 7 is, for example, two electrodes arranged on both sides of the air intake pipe 51, and the two electrodes are respectively connected to the positive electrode and the negative electrode of the radio frequency power supply. Further, the two electrodes are, for example, the same length as the air intake pipe 51, so that the radio frequency electric field formed by the two electrodes is distributed inside the entire air intake pipe 51.

[0062] Specifically, it can be selected whether to open the ionization device 7 at the corresponding air inlet pipe 51 according to the type of gas and the need for deposition. Taking the low-temperature silicon nitride deposition process as an example, the process uses ammonia and dichlorosilane gas to be alternately deposited on the surface of the wafer; in order to accelerate the process reaction, the ammonia needs to be ionized, so the ionization device 7 at the air inlet pipe 51 for conveying ammonia can be turned on to ionize the ammonia into nitrogen ions, thereby accelerating the reaction with silicon and depositing a layer of silicon nitride on the surface of the wafer. However, if the dichlorosilane gas is ionized, it will directly decompose into silicon, which is difficult to react with nitrogen to form silicon nitride, so the ionization device 7 at the air inlet pipe 51 for conveying dichlorosilane gas can be turned off; or, the ionization device 7 is not set at the air inlet pipe 51 for conveying dichlorosilane gas.

[0063] In some embodiments, Figure 2 As shown, an annular tray 13 and a top plate are also provided in the annular cavity. The annular tray 13 is located at the bottom side of all the wafer boats 2 and is used to carry all the wafer boats 2. The annular tray 13 and the top plate can enclose a process space with the inner peripheral wall 11 and the outer peripheral wall 12. Moreover, since the semiconductor process has a high requirement for the sealing of the process environment, the process chamber 1 also has a bottom plate that is sealed and connected to the inner peripheral wall 11 and the outer peripheral wall 12.

[0064] The semiconductor process equipment also includes a first drive device and a plurality of second drive devices (not shown in the figure). The first drive device is connected to the annular tray 13, and is used to drive the annular tray 13 to rotate around the axis of the annular cavity, so as to drive all the wafer boats 2 to rotate around the axis of the annular cavity. A plurality of second drive devices are arranged on the annular tray 13 and are connected to a plurality of wafer boats 2 one by one, and are used to drive each wafer boat 2 to rotate around its own axis. In other words, each wafer boat 2 can revolve in the annular cavity with the annular tray 13, and can also rotate on its own, so that the wafers carried by each wafer boat 2 can be fully in contact with the process gas, thereby improving the process effect.

[0065] Furthermore, by driving the wafer boat 2 to revolve, each wafer boat 2 can reach the positions of two gas inlet devices 5 during each revolution of the wafer boat 2. Thus, as the wafer boat 2 revolves, the wafers can be alternately contacted with the two process gases, so that the two process gases are alternately deposited on the wafer surface in a continuous and stable gas flow field.

[0066] It should be noted that the rotation speeds of the annular tray 13 and the wafer boat 2 can be adjusted according to actual process requirements and process conditions. For example, when the annular chamber performs gas deposition, the rotation speed of the annular base can be 1 revolution / minute; the rotation speed of the wafer boat 2 can be 2.6 revolutions / minute.

[0067] In some embodiments, Figure 1 and Figure 2 As shown, the semiconductor process equipment further includes a furnace shell 8. The furnace shell 8 surrounds the outer side of the peripheral wall 12 of the annular cavity and is spaced apart from the peripheral wall 12 of the annular cavity to keep the process chamber 1 warm as a whole.

[0068] It is understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A semiconductor process equipment, characterized in that: include: A process chamber comprises an annular cavity, and an inner peripheral wall and an outer peripheral wall respectively arranged on the inner periphery and the outer periphery of the annular cavity; A plurality of wafer boats, which are circumferentially distributed in the annular cavity around the axis of the annular cavity and are rotatable around the axis of the annular cavity; Two groups of air inlet devices are symmetrically arranged with the axis of the annular cavity as an axis; each group of the air inlet devices has a plurality of first air ports connected to the annular cavity, and the plurality of first air ports are fixed on the inner side of the outer peripheral wall; the two groups of air inlet devices are used to continuously deliver two process gases to the process chamber respectively; Two groups of exhaust devices are symmetrically arranged with the axis of the annular cavity as the axis; each group of the exhaust devices has a plurality of second air ports connected to the annular cavity, the plurality of second air ports are fixed on the outside of the inner wall, and the second air ports of the two groups of exhaust devices are respectively opposite to the two groups of air intake devices; the exhaust devices are used to continuously discharge the gas inside the annular cavity.

2. The semiconductor process equipment according to claim 1, characterized in that: Each group of the air inlet devices comprises two air inlet pipes parallel to the axis of the annular cavity; each of the air inlet pipes is fixed on the inner circumferential surface of the outer circumferential wall, and the plurality of the first air ports are axially arranged on the surfaces of the plurality of air inlet pipes; the air inlet pipes of the two groups of the air inlet devices are respectively connected to two process gas sources; Each group of the exhaust devices includes an exhaust pipe parallel to the axis of the annular cavity; each of the exhaust pipes is fixed on the outer circumferential surface of the inner circumferential wall and is located between the corresponding two intake pipes; a plurality of the second air ports are axially arranged on the surfaces of the plurality of exhaust pipes; and each of the exhaust pipes is connected to an air extraction pump.

3. The semiconductor process equipment according to claim 1, characterized in that: It also includes an annular tray and a top plate; the top plate is located at the top of the inner peripheral wall and the outer peripheral wall; the annular tray is located at the bottom of all the wafer boats and is used to carry the wafer boats; the annular tray and the top plate can enclose a process space with the inner peripheral wall and the outer peripheral wall; The semiconductor process equipment further includes a first driving device and a plurality of second driving devices; wherein, The first driving device is connected to the annular tray and is used to drive the annular tray to rotate around the axis of the annular cavity; A plurality of the second driving devices are arranged on the annular tray and are connected to a plurality of the wafer boats in a one-to-one correspondence, and are used to drive each of the wafer boats to rotate around its own axis.

4. The semiconductor process equipment according to claim 1, characterized in that: The semiconductor process equipment further comprises an inner heater and an outer heater, the area defined by the inner peripheral wall is a central area, the inner heater is located in the central area; the outer heater surrounds the outer side of the annular cavity; The inner heater and the outer heater are both used for heating the annular cavity.

5. The semiconductor process equipment according to claim 2, characterized in that: In a direction parallel to the bottom surface of the annular cavity, an angle between two connecting lines of the orthographic projection of the exhaust pipe axis and the orthographic projections of the corresponding two intake pipe axes is 60°.

6. The semiconductor process equipment according to claim 2, characterized in that: The second air ports are all rectangular.

7. The semiconductor process equipment according to claim 2, characterized in that: It also includes an ionization device; the ionization device is arranged on the outside of at least one of the air inlet pipes and can be electrically connected thereto; the ionization device is used to feed radio frequency power into the air inlet pipe when turned on to ionize the process gas.

8. The semiconductor process equipment according to claim 2, characterized in that: Each of the wafer boats has a plurality of bearing parts distributed along an axis, and the bearing parts are used to bear wafers; the axis of the wafer boat is parallel to the axis of the annular cavity; The plurality of second air ports on each exhaust pipe and the plurality of first air ports on each intake pipe are arranged in one-to-one correspondence with the plurality of supporting parts of each wafer boat in the axial direction.

9. The semiconductor process equipment according to claim 4, characterized in that: The internal heater comprises a mounting post and a first heating wire; the mounting post is located in the central area and extends along the axis of the annular cavity; the first heating wire surrounds the outer circumference of the mounting post to radiate heat outward when powered on; The external heater comprises a second heating wire; the second heating wire is surrounded on the outer peripheral surface of the outer peripheral wall and is used for radiating heat outward when powered on.

10. The semiconductor process equipment according to claim 1, characterized in that: It also includes a furnace shell; the furnace shell surrounds the outer side of the outer peripheral wall of the annular cavity and is spaced apart from the outer peripheral wall of the annular cavity.

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