MOS drive circuit with temperature switch

Abstract

The utility model discloses an MOS drive circuit with a temperature switch. One end of the circuit is connected with the battery and the other end is connected with the MCU; comprising a linear power supply module (100), a temperature sensing switch module (200), an MOS driving module (300) and an MOS protection module (400). The linear power supply module (100) is connected with the MOS driving module (300) through the temperature sensing switch module (200); the MOS driving module (300) is connected with the MOS protection module (400); the linear power supply module (100) is connected with a battery; and the MOS driving module (300) is connected with the MCU. According to the utility model, the requirement of a large-current MOS tube switch can be met, the temperature sensing switch module is switched off when the temperature is too high and is switched on again after the temperature is recovered to be normal, the overheat protection and automatic recovery effects on the circuit can be realized, and the circuit has the advantages of high safety and simple circuit.

Description

Technical Field

[0001] The utility model relates to the technical field of BMS, in particular to a MOS drive circuit with a temperature switch. Background Art

[0002] In the energy storage battery management system, MOS tubes are needed to control and protect the battery's charging and discharging process. MOS tubes can be placed at the positive end of the battery for control, or at the negative end for control. However, when the positive end is controlled, oscillation may occur at the moment of turning off the MOS, and the momentary large current causes the MOS to break down. If the negative end is selected for control, this problem will not occur. The MOS tube needs a special drive circuit to be controlled at the negative end, because the MOS tube requires too much current. If the opening or closing time is too long, the power loss of the MOS tube is too large, which not only reduces the loss life of the MOS tube, but also easily generates heat. The existing methods of quickly turning off the MOS tube are to use a driver chip and a triode drive circuit. The former is costly and the circuit is complex; the latter's drive current cannot meet the requirements of the high-current MOS tube switch. Utility Model Content

[0003] The purpose of the utility model is to provide a MOS drive circuit with a temperature switch. The utility model can meet the requirements of a high-current MOS tube switch. The temperature sensing switch module is disconnected when the temperature is too high and is turned on again after the temperature returns to normal, which can provide overheat protection and automatic recovery for the circuit, and has the advantages of high safety and simple circuit.

[0004] The technical solution of the utility model is: a MOS drive circuit with a temperature switch, one end of the circuit is connected to a battery, and the other end is connected to an MCU; it comprises a linear power supply module, a temperature sensing switch module, a MOS drive module and a MOS protection module; the linear power supply module is connected to the MOS drive module via the temperature sensing switch module; the MOS drive module is connected to the MOS protection module; the linear power supply module is connected to a battery; and the MOS drive module is connected to an MCU.

[0005] The above-mentioned MOS drive circuit with temperature switch, the linear power supply module includes a resistor R1, a resistor R3, a capacitor C1, a capacitor C2, a transistor Q1, a transistor Q2, a zener diode D1 and a zener diode D2; one end of the resistor R3 is connected to the positive electrode of the battery, and the other end of the resistor R3 is connected to one end of the resistor R1, the collector of the transistor Q1 and the collector of the transistor Q2; the other end of the resistor R1 is connected to the base of the transistor Q2 and the negative electrode of the zener diode D2, and the positive electrode of the zener diode D2 is grounded; the emitter of the transistor Q2 is connected to the base of the transistor Q1; the emitter of the transistor Q1 is connected to the negative electrode of the zener diode D1, one end of the capacitor C1 and one end of the capacitor C2, and the emitter of the transistor Q1 is connected to the temperature sensing switch module; the positive electrode of the zener diode D1, the other end of the capacitor C1 and the other end of the capacitor C2 are all grounded.

[0006] The aforementioned MOS drive circuit with a temperature switch, the MOS drive module includes a resistor R2, a resistor R4, a resistor R5, a resistor R6, a resistor R7, a resistor R8, a resistor R9, a resistor R11, a resistor R14, a resistor R15, a resistor R16, a capacitor C3, a capacitor C4, a transistor Q3, a transistor Q4, a transistor Q5, a transistor Q6, a transistor Q7, a voltage regulator diode D3, a diode D4, a diode D5, and a diode D6; one end of the resistor R5 is connected to the MCU, and the other end of the resistor R5 is connected to the A diode D4, the other end of the diode D4 is connected to one end of the resistor R4, the base of the transistor Q3 and one end of the resistor R8; the other end of the resistor R8 is grounded; the other end of the resistor R4 is connected to the emitter of the transistor Q3 and one end of the resistor R2; the other end of the resistor R2 is connected to the positive electrode of the voltage-stabilizing diode D3, the negative electrode of the voltage-stabilizing diode D3 is connected to the positive electrode of the diode D5, and the negative electrode of the voltage-stabilizing diode D3 is connected to the temperature sensing switch module; the negative electrode of the diode D5 is connected to one end of the resistor R7 and the collector of the transistor Q4 ; The other end of the resistor R7 is connected to the base of the transistor Q4, the base of the transistor Q5, the collector of the transistor Q6, the collector of the transistor Q7 and one end of the resistor R15; the other end of the resistor R15 is grounded; the emitter of the transistor Q4 is connected to the emitter of the transistor Q5, and the emitter of the transistor Q4 is connected to the MOS protection module; the collector of the transistor Q5 is grounded; the emitter of the transistor Q7 is grounded; the base of the transistor Q7 is connected to one end of the resistor R16, one end of the capacitor C4 and the resistor R9 one end of the resistor R16; the other end of the resistor R16 and the other end of the capacitor C4 are both grounded; the other end of the resistor R9 is connected to one end of the resistor R6, and the other end of the resistor R6 is grounded; the emitter of the transistor Q6 is grounded; the base of the transistor Q6 is connected to one end of the resistor R11, one end of the resistor R14 and one end of the capacitor C3; the other end of the resistor R14 and the other end of the capacitor C3 are both grounded; the other end of the resistor R11 is connected to the cathode of the diode D6; the anode of the diode D6 is connected to the collector of the transistor Q3.

[0007] The aforementioned MOS driving circuit with a temperature switch, the MOS protection module includes a resistor R10, a resistor R12, a resistor R13, a diode D7, a voltage zener diode DZ1, a bidirectional anti-static tube TVS1 and a MOS tube M1; one end of the resistor R13 is connected to the positive electrode of the diode D7, and one end of the resistor R13 is connected to the MOS driving module; the other end of the resistor R13 is connected to the negative electrode of the diode D7, one end of the resistor R12, the negative electrode of the voltage zener diode DZ1 and one end of the resistor R10; the other end of the resistor R12 is connected to the gate of the MOS tube M1; the positive electrode of the voltage zener diode DZ1 is connected to the other end of the resistor R10, the source of the MOS tube M1 and one end of the bidirectional anti-static tube TVS1, and the positive electrode of the voltage zener diode DZ1 is grounded; the drain of the MOS tube M1 is connected to the other end of the bidirectional anti-static tube TVS1.

[0008] In the aforementioned MOS driving circuit with temperature switch, the temperature sensing switch module is a thermistor RT1.

[0009] In the aforementioned MOS driving circuit with temperature switch, the emitter of the transistor Q1 is connected to the thermistor RT1.

[0010] In the aforementioned MOS driving circuit with temperature switch, the cathode of the voltage stabilizing diode D3 is connected to the thermistor RT1.

[0011] Compared with the prior art, the utility model has the following beneficial effects:

[0012] 1. The linear power module of the utility model is connected to a battery and outputs a linear power supply to a MOS driving module; a temperature sensing switch module is connected between the linear power module and the MOS driving module. When the temperature is too high, the temperature sensing switch module is automatically cut off, thereby stopping the output of the linear power supply; when the temperature returns to normal, the temperature sensing switch module is automatically turned on, and the linear power supply continues to output; so that the utility model has the functions of overheat protection and automatic recovery; the MCU is connected to the MOS protection module through the MOS driving module to control the operation of the MOS protection module; the setting of the MOS protection module can improve the safety of the MOS tube when in use; the utility model can meet the requirements of a large current MOS tube switch, the temperature sensing switch module is disconnected when the temperature is too high, and is turned on again after the temperature returns to normal, which can play a role in overheat protection and automatic recovery for the circuit, and has the advantages of high safety and simple circuit.

[0013] 2. The MOS protection module of the utility model is provided with a voltage-stabilizing diode and a bidirectional antistatic tube, which can prevent the MOS tube from high-voltage breakdown and electrostatic damage; so that the MOS tube can operate safely and stably in actual application scenarios. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a circuit diagram of the utility model.

[0015] The markings in the attached drawings are: 100 - linear power supply module, 200 - temperature sensor switch module, 300 - MOS driving module, 400 - MOS protection module. DETAILED DESCRIPTION

[0016] The present invention is further described below in conjunction with the accompanying drawings and embodiments, but they are not intended to limit the present invention.

[0017] Embodiment: A MOS driving circuit with a temperature switch, the structure of which is as follows Figure 1 As shown, the circuit is connected to a battery at one end and to an MCU at the other end; it includes a linear power module 100, a temperature sensing switch module 200, a MOS driver module 300 and a MOS protection module 400; the linear power module 100 is connected to the MOS driver module 300 via the temperature sensing switch module 200; the MOS driver module 300 is connected to the MOS protection module 400; the linear power module 100 is also connected to a battery; the MOS driver module 300 is also connected to an MCU. The temperature sensing switch module 200 is a thermistor RT1. The linear power supply module 100 of the utility model is connected to a battery and outputs a linear power supply to a MOS driving module 300; a temperature sensing switch module 200 is connected between the linear power supply module 100 and the MOS driving module 300; when the temperature is too high, the temperature sensing switch module 200 is automatically turned off, thereby stopping the output of the linear power supply; when the temperature returns to normal, the temperature sensing switch module 200 is automatically turned on, and the linear power supply continues to output; so that the utility model has the functions of overheating protection and automatic recovery; the MCU is connected to the MOS protection module 400 through the MOS driving module 300 to control the operation of the MOS protection module 400; the setting of the MOS protection module 400 can improve the safety of the MOS tube M1 when in use.

[0018] The linear power supply module 100 includes a resistor R1, a resistor R3, a capacitor C1, a capacitor C2, a transistor Q1, a transistor Q2, a voltage-stabilizing diode D1 and a voltage-stabilizing diode D2; one end of the resistor R3 is connected to the positive electrode of the battery, and the other end of the resistor R3 is connected to one end of the resistor R1, the collector of the transistor Q1 and the collector of the transistor Q2; the other end of the resistor R1 is connected to the base of the transistor Q2 and the negative electrode of the voltage-stabilizing diode D2, and the positive electrode of the voltage-stabilizing diode D2 is grounded; the emitter of the transistor Q2 is connected to the base of the transistor Q1; the emitter of the transistor Q1 is connected to the negative electrode of the voltage-stabilizing diode D1, one end of the capacitor C1 and one end of the capacitor C2, and the emitter of the transistor Q1 is connected to the temperature sensing switch module 200, and the emitter of the transistor Q1 is connected to the thermistor RT1; the positive electrode of the voltage-stabilizing diode D1, the other end of the capacitor C1 and the other end of the capacitor C2 are all grounded. The linear power supply module 100 is connected to the positive electrode of the battery as the power input of the MOS driving module 300, and outputs the linear power supply DRIVE-V; the current starts from the positive electrode of the battery, is amplified by the transistor Q1 and the transistor Q2, and then passes through the temperature sensing switch module 200; the temperature sensing switch module 200 sets a set temperature value, and when the actual temperature is higher than the set value, the temperature sensing switch module 200 is automatically turned off, so that the linear power supply module 100 outputs the linear power supply DRIVE-V to the MOS driving module 300 and stops outputting; when the temperature is lower than the set value, the temperature sensing switch module 200 is automatically turned on, and the linear power supply module 100 outputs the linear power supply DRIVE-V as the power input of the MOS driving module 300; in this way, the circuit of the utility model has the functions of overheat protection and automatic recovery.

[0019] The MOS driving module 300 includes a resistor R2, a resistor R4, a resistor R5, a resistor R6, a resistor R7, a resistor R8, a resistor R9, a resistor R11, a resistor R14, a resistor R15, a resistor R16, a capacitor C3, a capacitor C4, a transistor Q3, a transistor Q4, a transistor Q5, a transistor Q6, a transistor Q7, a voltage stabilizing diode D3, a diode D4, a diode D5, and a diode D6; one end of the resistor R5 is connected to the MCU, the other end of the resistor R5 is connected to the diode D4, and the other end of the diode D4 is connected to the zener diode D3, a diode D4, a diode D5, and a diode D6; One end of the resistor R4, the base of the transistor Q3 and one end of the resistor R8; the other end of the resistor R8 is grounded; the other end of the resistor R4 is connected to the emitter of the transistor Q3 and one end of the resistor R2; the other end of the resistor R2 is connected to the positive electrode of the voltage-stabilizing diode D3, the negative electrode of the voltage-stabilizing diode D3 is connected to the positive electrode of the diode D5, and the negative electrode of the voltage-stabilizing diode D3 is connected to the temperature sensing switch module 200, and the negative electrode of the voltage-stabilizing diode D3 is connected to the thermistor RT1; the negative electrode of the diode D5 is connected to one end of the resistor R7 and the transistor Q4 The collector of the transistor Q5 is connected to the base of the transistor Q4, the base of the transistor Q5, the collector of the transistor Q6, the collector of the transistor Q7 and one end of the resistor R15; the other end of the resistor R15 is grounded; the emitter of the transistor Q4 is connected to the emitter of the transistor Q5, and the emitter of the transistor Q4 is connected to the MOS protection module 400; the collector of the transistor Q5 is grounded; the emitter of the transistor Q7 is grounded; the base of the transistor Q7 is connected to one end of the resistor R16, one end of the capacitor C4 and the one end of the resistor R9; the other end of the resistor R16 and the other end of the capacitor C4 are both grounded; the other end of the resistor R9 is connected to one end of the resistor R6, and the other end of the resistor R6 is grounded; the emitter of the transistor Q6 is grounded; the base of the transistor Q6 is connected to one end of the resistor R11, one end of the resistor R14 and one end of the capacitor C3; the other end of the resistor R14 and the other end of the capacitor C3 are both grounded; the other end of the resistor R11 is connected to the cathode of the diode D6; the anode of the diode D6 is connected to the collector of the transistor Q3.The MOS protection module 400 is connected to the CO pin of the MCU via the MOS driving module 300. When the CO pin of the MCU outputs a high level, the transistors Q3, Q6 and Q7 in the MOS driving module 300 are in a cut-off state, the transistor Q4 is in a linear conduction state, and the MOS driving module 300 outputs a high level. At this time, the CHG point potential in the MOS protection module 400 is a high level, so the gate-source voltage (VGS) of the MOS tube M1 is a high level. At this time, the MOS tube M1 is in a conduction state and the MOS tube M1 works. When the MC When the CO pin of U outputs a low level, the transistors Q3, Q6 and Q7 in the MOS driving module 300 are in a saturated conduction state, and the transistor Q4 is in a cut-off state. When the transistor Q4 turns to the cut-off state, the transistor Q5 is saturated and turned on, and the MOS driving module 300 outputs a low level; the potential of the CHG point in the MOS protection module 400 is instantly pulled to PACK-, that is, 0 potential; thereby the potential of the CHG point is quickly pulled down, and the MOS tube M1 is in the cut-off state at this time, and the MOS tube M1 stops working, thereby achieving the purpose of quickly shutting down the MOS tube M1.

[0020] The MOS protection module 400 includes a resistor R10, a resistor R12, a resistor R13, a diode D7, a voltage zener diode DZ1, a bidirectional anti-static tube TVS1 and a MOS tube M1; one end of the resistor R13 is connected to the positive electrode of the diode D7, and one end of the resistor R13 is connected to the MOS driving module 300; the other end of the resistor R13 is connected to the negative electrode of the diode D7, one end of the resistor R12, the negative electrode of the voltage zener diode DZ1 and one end of the resistor R10; the other end of the resistor R12 is connected to the gate of the MOS tube M1; the positive electrode of the voltage zener diode DZ1 is connected to the other end of the resistor R10, the source of the MOS tube M1 and one end of the bidirectional anti-static tube TVS1, and the positive electrode of the voltage zener diode DZ1 is grounded; the drain of the MOS tube M1 is connected to the other end of the bidirectional anti-static tube TVS1. The arrangement of the voltage stabilizing diode DZ1 and the bidirectional antistatic tube TVS1 in the MOS protection module 400 can prevent the MOS tube M1 from high voltage breakdown and electrostatic damage, so that the MOS tube M1 can operate safely and stably in actual application scenarios.

[0021] Working principle: The linear power supply module 100 of the utility model is connected to a battery and outputs a linear power supply to the MOS driving module 300; a temperature sensing switch module 200 is connected between the linear power supply module 100 and the MOS driving module 300. When the temperature is too high, the temperature sensing switch module 200 is automatically cut off, thereby stopping the output of the linear power supply; when the temperature returns to normal, the temperature sensing switch module 200 is automatically turned on, and the linear power supply continues to output; so that the utility model has the functions of overheat protection and automatic recovery; the MCU is connected to the MOS protection module 400 through the MOS driving module 300 to control the operation of the MOS protection module 400; the setting of the MOS protection module 400 can improve the safety of the MOS tube M1 when in use; the utility model can meet the requirements of a large current MOS tube switch, the temperature sensing switch module is disconnected when the temperature is too high, and is turned on again after the temperature returns to normal, which can play a role in overheat protection and automatic recovery for the circuit, and has the advantages of high safety and simple circuit.

[0022] The above embodiments only express the implementation methods of the utility model, and the description is relatively specific and detailed, but it cannot be understood as limiting the scope of the utility model patent. In this embodiment, up, down, left, right, front, and back only represent their relative positions and do not represent their absolute positions. It should be pointed out that for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the utility model, which all belong to the protection scope of the utility model. Therefore, the protection scope of the utility model patent shall be based on the attached claims.

Claims

1. A MOS drive circuit with a temperature switch, one end of the circuit is connected to a battery and the other end is connected to an MCU; characterized in that: The invention comprises a linear power supply module (100), a temperature sensing switch module (200), a MOS driving module (300) and a MOS protection module (400); the linear power supply module (100) is connected to the MOS driving module (300) via the temperature sensing switch module (200); the MOS driving module (300) is connected to the MOS protection module (400); the linear power supply module (100) is connected to a battery; and the MOS driving module (300) is connected to an MCU.

2. The MOS driving circuit with temperature switch according to claim 1, characterized in that: The linear power supply module (100) comprises a resistor R1, a resistor R3, a capacitor C1, a capacitor C2, a transistor Q1, a transistor Q2, a voltage-stabilizing diode D1 and a voltage-stabilizing diode D2; one end of the resistor R3 is connected to the positive electrode of a battery, and the other end of the resistor R3 is connected to one end of the resistor R1, the collector of the transistor Q1 and the collector of the transistor Q2; the other end of the resistor R1 is connected to the base of the transistor Q2 and the negative electrode of the voltage-stabilizing diode D2, and the positive electrode of the voltage-stabilizing diode D2 is grounded; the emitter of the transistor Q2 is connected to the base of the transistor Q1; the emitter of the transistor Q1 is connected to the negative electrode of the voltage-stabilizing diode D1, one end of the capacitor C1 and one end of the capacitor C2, and the emitter of the transistor Q1 is connected to the temperature sensing switch module (200); the positive electrode of the voltage-stabilizing diode D1, the other end of the capacitor C1 and the other end of the capacitor C2 are all grounded.

3. The MOS driving circuit with temperature switch according to claim 2, characterized in that: The MOS driving module (300) comprises a resistor R2, a resistor R4, a resistor R5, a resistor R6, a resistor R7, a resistor R8, a resistor R9, a resistor R11, a resistor R14, a resistor R15, a resistor R16, a capacitor C3, a capacitor C4, a transistor Q3, a transistor Q4, a transistor Q5, a transistor Q6, a transistor Q7, a voltage stabilizing diode D3, a diode D4, a diode D5, and a diode D6; one end of the resistor R5 is connected to the MCU, the other end of the resistor R5 is connected to the diode D4, and the diode D4 is The other end is connected to one end of a resistor R4, a base of a transistor Q3 and one end of a resistor R8; the other end of the resistor R8 is grounded; the other end of the resistor R4 is connected to the emitter of the transistor Q3 and one end of a resistor R2; the other end of the resistor R2 is connected to the positive electrode of a voltage-stabilizing diode D3, the negative electrode of the voltage-stabilizing diode D3 is connected to the positive electrode of a diode D5, and the negative electrode of the voltage-stabilizing diode D3 is connected to a temperature sensing switch module (200); the negative electrode of the diode D5 is connected to one end of a resistor R7 and the collector of the transistor Q4; the resistor R The other end of transistor 7 is connected to the base of transistor Q4, the base of transistor Q5, the collector of transistor Q6, the collector of transistor Q7 and one end of resistor R15; the other end of resistor R15 is grounded; the emitter of transistor Q4 is connected to the emitter of transistor Q5, and the emitter of transistor Q4 is connected to MOS protection module (400); the collector of transistor Q5 is grounded; the emitter of transistor Q7 is grounded; the base of transistor Q7 is connected to one end of resistor R16, one end of capacitor C4 and one end of resistor R9. one end; the other end of the resistor R16 and the other end of the capacitor C4 are both grounded; the other end of the resistor R9 is connected to one end of the resistor R6, and the other end of the resistor R6 is grounded; the emitter of the transistor Q6 is grounded; the base of the transistor Q6 is connected to one end of the resistor R11, one end of the resistor R14 and one end of the capacitor C3; the other end of the resistor R14 and the other end of the capacitor C3 are both grounded; the other end of the resistor R11 is connected to the cathode of the diode D6; the anode of the diode D6 is connected to the collector of the transistor Q3.

4. The MOS driving circuit with temperature switch according to claim 1, characterized in that: The MOS protection module (400) comprises a resistor R10, a resistor R12, a resistor R13, a diode D7, a voltage stabilizing diode DZ1, a bidirectional antistatic tube TVS1 and a MOS tube M1; one end of the resistor R13 is connected to the positive electrode of the diode D7, and one end of the resistor R13 is connected to the MOS driving module (300); the other end of the resistor R13 is connected to the negative electrode of the diode D7, one end of the resistor R12, the negative electrode of the voltage stabilizing diode DZ1 and one end of the resistor R10; the other end of the resistor R12 is connected to the gate of the MOS tube M1; the positive electrode of the voltage stabilizing diode DZ1 is connected to the other end of the resistor R10, the source of the MOS tube M1 and one end of the bidirectional antistatic tube TVS1, and the positive electrode of the voltage stabilizing diode DZ1 is grounded; the drain of the MOS tube M1 is connected to the other end of the bidirectional antistatic tube TVS1.

5. The MOS driving circuit with temperature switch according to claim 3, characterized in that: The temperature sensing switch module (200) is a thermistor RT1.

6. The MOS driving circuit with temperature switch according to claim 5, characterized in that: The emitter of the transistor Q1 is connected to the thermistor RT1.

7. The MOS driving circuit with temperature switch according to claim 5, characterized in that: The cathode of the voltage stabilizing diode D3 is connected to the thermistor RT1.

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