Spraying device and spraying system for semiconductor substrate
By designing the main flow path and at least one runner arrangement and valve control of the spraying device, the problem of liquid dripping during the etching and cleaning of semiconductor substrates is solved, and fluid mixing and single outlet spraying are realized, which improves process yield and reduces cost.
Patent Information
- Application Number
- CN202420827464.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-04-19
- Publication Date
- 2025-02-07
- Estimated Expiration
- 2034-04-19
AI Technical Summary
Prior Art During the etching and cleaning of semiconductor substrates, liquid drips due to the residual liquid in the nozzle and pipeline, resulting in a decrease in yield, and deionized water and etching solution cannot coexist, resulting in etching unevenness and process controllability. decline.
Design a spraying device, adopting the arrangement design of the main channel and at least one runner, controls the opening and closing of the fluid through a valve, ensures that the fluid is mixed in the main channel and sprayed through a single outlet, avoiding liquid dripping, and in the spraying system Add a flow controller and control module to regulate fluid flow and valve status.
Effectively prevent chemical liquid from dripping on semiconductor substrates, reduce pipeline blockage and corrosion, improve process yield and yield, and reduce consumable replacement and process costs.
Smart Images
Figure CN222428286U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to a spraying device and a spraying system, and in particular to a spraying device and a spraying system for a semiconductor substrate. Background Art
[0002] In the prior art, when etching or cleaning the surface of a semiconductor substrate (such as a wafer, etc.), due to liquid residue in the nozzle and the pipe connected to the nozzle, residual liquid often drips from the nozzle onto the semiconductor substrate after exceeding a predetermined etching time, resulting in a decrease in the yield of the cleaning and etching process.
[0003] Generally speaking, after spraying the liquid used for etching, deionized water or other solvents are sprayed immediately to remove the etching liquid on the surface of the semiconductor substrate and prevent the semiconductor substrate from being etched by too much liquid. However, since deionized water cannot be stored in the same container as the etching solution, nor can it be sprayed using the same pipeline and spray, in practice, even if the process is set to spray deionized water immediately after etching, it is still necessary to wait for the etching solution nozzle to be removed and the deionized water nozzle to move to a fixed position. During this time, part of the etching solution will still be on the semiconductor substrate, causing over-etching of the semiconductor substrate or damage to the surface structure.
[0004] Furthermore, since the deionized water and etching solution are not sprayed from the same nozzle, or even on the same moving mechanism, time differences and positioning gaps are likely to occur when moving and replacing different nozzles, resulting in a decrease in the overall controllability of the semiconductor process, and a large amount of time and manpower costs are required to adjust parameters and optimize. In addition, the pipes and nozzles that are immersed in high-concentration etching solutions for a long time are easily corroded or blocked by crystals formed by the solution, further increasing the problems of reduced process yield, increased consumables, and increased costs.
[0005] Therefore, the technical field of the present application urgently needs a spraying device and its operating method and a spraying system with a single fluid outlet, which can prevent the solution from dripping onto the semiconductor substrate, prevent the solution from crystallizing and clogging the pipeline, and can mix the drug solution in the pipeline. Utility Model Content
[0006] The spray device and spray system for semiconductor substrates provided in the present application can complete the cleaning of the spray device pipeline and the surface of the semiconductor substrate while the process is in progress through the arrangement design of the main channel and at least one branch channel, so as to avoid crystallization of the liquid and corrosion of the channel or nozzle that requires replacement.
[0007] In order to solve the problem of over-etching caused by conventional chemical liquid dripping on the surface of a semiconductor substrate, the present application provides a spraying device for spraying at least one semiconductor substrate, which includes: a main channel and at least one branch channel. The main channel has a main channel inlet and a main channel outlet, for allowing gas to flow from the main channel inlet to the main channel outlet. The at least one branch channel is connected to the main channel, and each of the at least one branch channel has a branch channel inlet, for allowing fluid to flow from the branch channel inlet to the main channel outlet.
[0008] In a preferred embodiment of the present application, the at least one branch channel further includes: a first branch channel having a first branch channel inlet; and a second branch channel having a second branch channel inlet; wherein the first branch channel is closer to the main channel inlet of the main channel than the second branch channel, so that the first fluid flows into the first branch channel from the first branch channel inlet and then enters the main channel, and then flows to the main channel outlet after passing through the second branch channel.
[0009] In a preferred embodiment of the present application, the at least one branch channel further includes: a third branch channel having a third branch channel inlet; wherein the third branch channel is farther away from the main channel inlet of the main channel relative to the first branch channel and the second branch channel, so that the first fluid flows into the first branch channel from the first branch channel inlet and then enters the main channel, and then flows to the main channel outlet after passing through the second branch channel and the third branch channel in sequence.
[0010] In a preferred embodiment of the present application, the second branch channel inlet is for a second fluid to flow from the second branch channel into the main channel, and the third branch channel inlet is for a third fluid to flow from the third branch channel into the main channel. The second fluid and the third fluid enter the main channel, mix, and flow toward the main channel outlet.
[0011] In a preferred embodiment of the present application, the at least one branch channel further includes: a first branch channel having a first branch channel inlet; and a second branch channel having a second branch channel inlet; wherein the first branch channel is connected to the main channel and the second branch channel is connected to the main channel at the same vertical distance from the main channel inlet of the main channel.
[0012] In a preferred embodiment of the present application, the main flow channel inlet and the branch flow channel inlet are respectively provided with valves for controlling the opening or closing of the main flow channel and each of the at least one branch flow channel.
[0013] The present application also provides a spraying system, which includes: at least one semiconductor substrate; a spraying device as described in any of the aforementioned embodiments, arranged above the at least one semiconductor substrate, wherein the main channel inlet and the branch channel inlet of the spraying device respectively have valves for controlling the opening or closing of the main channel and each of the at least one branch channel; a plurality of flow controllers, respectively connected to the valves of the main channel and each of the at least one branch channel, for monitoring the flow of the gas or the fluid; and a control module, the signal of which is connected to the spraying device and the plurality of flow controllers, for regulating the flow of the gas or the fluid, and the opening or closing of the main channel and each of the at least one branch channel.
[0014] In a preferred embodiment of the present application, the at least one branch channel further includes a first branch channel and a second branch channel, and the main channel, the first branch channel and the second branch channel respectively have a main valve, a first valve and a second valve; wherein the first branch channel has a first branch channel inlet for allowing a first fluid to flow from the first branch channel inlet to the main channel outlet, and the second branch channel has a second branch channel inlet for allowing a second fluid to flow from the second branch channel inlet to the main channel outlet; wherein the first branch channel is closer to the main channel inlet of the main channel than the second branch channel, so that the first fluid flows from the first branch channel inlet into the first branch channel and then enters the main channel, and then flows to the main channel outlet after passing through the second branch channel; wherein the main valve, the first valve and the second valve are respectively used to control the opening or closing of the main channel, the first branch channel and the second branch channel, and are respectively connected to one of the plurality of flow controllers.
[0015] In a preferred embodiment of the present application, the at least one branch channel further includes: a third branch channel, having a third branch channel inlet, for allowing a third fluid to flow from the third branch channel inlet to the main channel outlet; wherein, the first branch channel is closer to the main channel inlet of the main channel than the second branch channel and the third branch channel, and the second branch channel is closer to the main channel inlet of the main channel than the third branch channel, so that the first fluid flows into the first branch channel from the first branch channel inlet and then enters the main channel, and then flows to the main channel outlet after passing through the second branch channel and the third branch channel in sequence, and the second fluid flows into the second branch channel from the second branch channel inlet and then enters the main channel, and then flows to the main channel outlet after passing through the third branch channel.
[0016] The present application further provides an operating method for a semiconductor substrate including the spraying system in any of the aforementioned embodiments, wherein the operating method includes: opening the second valve and spraying the second fluid onto the at least one semiconductor substrate.
[0017] In a preferred embodiment of the present application, the operating method includes: opening the second valve and spraying the second fluid onto the at least one semiconductor substrate.
[0018] In a preferred embodiment of the present application, the operating method further comprises: when it is detected that the opening time of the second valve has reached a preset time value, closing the second valve and opening the first valve.
[0019] In a preferred embodiment of the present application, the operating method further includes: opening the first valve and spraying the first fluid onto the at least one semiconductor substrate.
[0020] In a preferred embodiment of the present application, the operating method further comprises: when it is detected that the opening time of the first valve has reached a preset time value, closing the first valve and opening the main valve.
[0021] In a preferred embodiment of the present application, the operating method further includes: opening the main valve and spraying the gas onto the at least one semiconductor substrate.
[0022] In a preferred embodiment of the present application, the operating method further comprises: closing the main valve when it is detected that the opening time of the main valve has reached a preset time value.
[0023] In a preferred embodiment of the present application, the operating method includes: opening the second valve and the third valve, mixing the second fluid and the third fluid in the main flow channel, and then spraying them onto the at least one semiconductor substrate.
[0024] In a preferred embodiment of the present application, the operating method includes: when it is detected that the opening time flow of the second valve and the third valve has reached the preset time value, closing the second valve and the third valve, and opening the first valve.
[0025] Compared to the prior art, the spraying device and spraying system for semiconductor substrates provided in the present application can reduce the problem in the semiconductor process that when the valve opening time has reached the preset time value, there is still fluid in the flow channel and drips onto the surface of the semiconductor substrate, thereby improving the yield or production rate of the overall process (for example, improving the cleaning yield after wafer etching), while reducing the number of times expensive consumables are replaced and reducing process costs. BRIEF DESCRIPTION OF THE DRAWINGS
[0026] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.
[0027] Figure 1 A three-dimensional schematic diagram of a spraying device for a semiconductor substrate provided by an embodiment of the present application;
[0028] Figure 2 A three-dimensional schematic diagram of a spraying device for a semiconductor substrate provided by another embodiment of the present application;
[0029] Figure 3 A three-dimensional schematic diagram of a spraying device for a semiconductor substrate provided by another embodiment of the present application;
[0030] Figure 4 A schematic diagram of a spraying system for a semiconductor substrate provided by an embodiment of the present application;
[0031] Figure 5 A three-dimensional schematic diagram of a spraying system for a semiconductor substrate provided by an embodiment of the present application;
[0032] Figure 6 A schematic flow chart of an operating method of a spraying device for a semiconductor substrate provided by an embodiment of the present application; and
[0033] Figure 7 A schematic flow chart of an operating method of a spraying device for a semiconductor substrate provided in accordance with another embodiment of the present application. DETAILED DESCRIPTION
[0034] The following describes the preferred embodiments of the present application with reference to the drawings of the specification to prove that the present application can be implemented. The application embodiments can fully introduce the present application to those skilled in the art, making its technical content clearer and easier to understand. The present application can be embodied through many different forms of application embodiments, and the scope of protection of the present application is not limited to the embodiments mentioned in the text. In the drawings, components with the same structure are represented by the same numerical labels, and components with similar structures or functions are represented by similar numerical labels. The size and thickness of each component shown in the drawings are arbitrarily shown, and the present application does not limit the size and thickness of each component. In order to make the illustration clearer, the thickness of the components is appropriately exaggerated in some places in the drawings.
[0035] In addition, the following descriptions of the application embodiments are with reference to the attached diagrams to illustrate specific application embodiments that the present application can be implemented with. The directional terms mentioned in the present application, such as "upper", "lower", "front", "back", "left", "right", "inner", "outer", "side", etc., are only with reference to the directions of the attached drawings. Therefore, the directional terms used are for better and clearer explanation and understanding of the present application, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second", "third", etc. are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.
[0036] See also Figure 1 and Figure 2 As shown, Figure 1 This is a three-dimensional schematic diagram of a spraying device for a semiconductor substrate provided by an embodiment of the present application. Figure 2 FIG. 1 is a perspective schematic diagram of a spraying device for a semiconductor substrate provided by another embodiment of the present application. The present application provides a spraying device 1 for spraying at least one semiconductor substrate 2 (see FIG. 1 ). Figure 5 As shown, detailed description is given later); in addition, the spraying in the present application may refer to cleaning, spraying or atomization, etc. The present application is not limited to the aforementioned examples or implementation methods and can be adjusted according to actual process requirements.
[0037] like Figure 1 and Figure 2 As shown, the spraying device 1 includes: a main channel 100 and at least one branch channel P. The main channel 100 has a main channel inlet 100I and a main channel outlet 100O, for allowing the gas G to flow from the main channel inlet 100I to the main channel outlet 100O. At least one branch channel P is connected to the main channel 100, and each of the at least one branch channel P has a branch channel inlet P1I, P2I, P3I, P4I, for allowing the fluid F1, F2, F3, F4 to flow from the branch channel inlet P1I, P2I, P3I, P4I to the main channel outlet 100O. The main channel outlet 100O is used to spray the gas G or the fluid F1, F2, F3, F4 onto the at least one semiconductor substrate 2. Furthermore, the main flow channel 100 and the at least one branch flow channel P are covered by a shell H on their outer sides to protect the connection between the flow channels and avoid damage to the flow channels due to collision.
[0038] See also Figure 1As shown, in the spraying device 1 of the present application, the at least one branch channel P further comprises: a first branch channel P1 and a second branch channel P2. The first branch channel P1 has a first branch channel inlet P1I, and the second branch channel P2 has a second branch channel inlet P2I.
[0039] In one embodiment, the first branch channel inlet P1I of the first branch channel P1 is connected to a deionized water supply source (not shown) to supply deionized water from the first branch channel inlet P1I to the main channel outlet 100O. The second branch channel inlet P2I of the second branch channel P2 is connected to a chemical liquid supply source (not shown) to supply chemical liquid from the second branch channel inlet P2I to the main channel outlet. The main channel inlet 100I of the main channel 100 is connected to a gas supply source (not shown) to supply the gas G from the main channel inlet 100I to the main channel outlet 100O. Specifically, in the embodiments of the present application, the deionized water may be RO reverse osmosis water, pure water or other water from which salts or anions and cations are removed (de-ionized water, DI water); the chemical liquid may be sulfuric acid, hydrochloric acid, nitric acid, hydrogen peroxide or other solvents; in addition, the gas G may be nitrogen or other inert gases, and the present application is not limited to the types of the chemical liquid, the deionized water or the gas G.
[0040] like Figure 1 As shown, in one embodiment, the first branch channel P1 is closer to the main channel inlet 100I of the main channel 100 than the second branch channel P2, so that a first fluid F1 (for example, deionized water) flows from the first branch channel inlet P1I into the first branch channel P1 and then enters the main channel 100, and then flows to the main channel outlet 100O after passing through the second branch channel P2. A second fluid F2 (for example, a chemical liquid) flows from the second branch channel inlet P2I into the second branch channel P2 and then enters the main channel 100 and then flows to the main channel outlet 100O. That is, the first branch channel P1 is higher than the second branch channel P2 in a vertical height, and the first branch channel P1 is located "upstream" of the second branch channel P2 in the main channel 100, that is, the first branch channel P1 and the second branch channel P2 are connected to the main channel 100 in a "series" manner.
[0041] See also Figure 3 As shown, and with Figure 1 As shown, Figure 3 This is a three-dimensional schematic diagram of a spraying device for a semiconductor substrate provided by another embodiment of the present application. Figure 3As shown, in one embodiment, the first branch channel P1 connected to the main channel 100 and the second branch channel P2 connected to the main channel 100 are at the same distance in a vertical direction from the main channel inlet 100I of the main channel 100, so that a first fluid F1 flows from the first branch channel inlet P1I into the first branch channel P1 and then enters the main channel 100 and then flows to the main channel outlet 100O. Specifically, the first branch channel P1 is connected to the main channel 100 and has a first connection point C1, the second branch channel P2 is connected to the main channel 100 and has a second connection point C2, and the first connection point C1 and the second connection point C2 are located on the same horizontal plane. In other words, the vertical height of the first connection point C1 and the second connection point C2 are the same, and the first branch channel P1 and the second branch channel P2 are connected to the main channel 100 in a "parallel" manner, and there is no distinction between upstream and downstream. As Figure 3 As shown, it should be noted that the first connection point C1 and the second connection point C2 are virtual points. For example, the cross-section where the first branch channel P1 and the second branch channel P2 are connected to the main channel 100 can be a circle, and the first connection point C1 and the second connection point C2 can be located at the center of the cross-section, but the present application is not limited to this. In addition, Figure 3 The connection method shown is only an example. The first branch channel P1 and the second branch channel P2 are connected to the main channel 100 at 90 degrees. In other embodiments, the first branch channel P1 and the second branch channel P2 can also be connected to the main channel 100 at 45 degrees, or connected at other angles. The present application is not limited to this.
[0042] That is to say, no matter whether the first branch channel P1 and the second branch channel P2 are connected to the main channel 100 in series or in parallel, the first fluid F1 will flow through all the places where the second fluid F2 flows in the main channel 100. When the first fluid F1 is deionized water, after the second fluid F2 flows through the main channel 100 and the main channel outlet 100O, they will be cleaned by the first fluid F1, so as to avoid the situation where the pipeline in the spray device 1 of the present application is blocked or corroded due to crystallization of the chemical solution due to long-term use.
[0043] like Figure 2As shown, in one embodiment, the at least one branch channel P further includes: a third branch channel P3. The third branch channel P3 has a third branch channel inlet P3I. The first branch channel P1 is closer to the main channel inlet 100I of the main channel 100 than the second branch channel P2 and the third branch channel P3, and the second branch channel P2 is closer to the main channel inlet 100I of the main channel 100 than the third branch channel P3, so that the first fluid F1 flows from the first branch channel inlet P1I into the first branch channel P1 and then enters the main channel 100, and then flows to the main channel outlet 100O after passing through the second branch channel P2 and the third branch channel P3 in sequence, and the second fluid F2 flows from the second branch channel inlet P2I into the second branch channel P2 and then enters the main channel 100, and then flows to the main channel outlet 100O after passing through the third branch channel P3. In other embodiments, the at least one branch channel P may further include a fourth branch channel P4, and the fourth branch channel P4 has a fourth branch channel inlet P4I.
[0044] That is to say, the number of the at least one flow channel P can be plural, and as Figures 1 to 3 As shown, the first branch channel P1 to the fourth branch channel P4 can be arranged in series along the main channel 100, and more branch channels can be added according to actual needs. The other implementation methods of the plurality of branch channels have been seen in the aforementioned embodiments, so they are not repeated here. It should be particularly noted that the fluids such as chemical liquid and deionized water flowing into the first fluid F1, the second fluid F2, the third fluid F3 and the fourth fluid F4 can be the same or different, and can be adjusted according to actual needs. The present application is not limited to this. In other embodiments, the type of fluid can also be adjusted according to the number of channels.
[0045] See also Figures 1 to 3 As shown, see Figure 4As shown, it is a schematic diagram of a spraying system for a semiconductor substrate provided by an embodiment of the present application. In one embodiment, the main channel 100 and each of the branch channels P1, P2, P3, P4 respectively have a valve VM, V1, V2, V3, V4, which are used to control the opening or closing of the main channel 100 and each of the at least one branch channel P. Specifically, the main channel 100 has a main valve VM, the first branch channel P1 has a first valve V1, the second branch channel P2 has a second valve V2, the third branch channel P3 has a third valve V3, and the fourth branch channel P4 has a fourth valve V4. It is worth mentioning that for the sake of simplicity, the present application omits the valves VM, V1, V2, V3, V4 in some figures. In addition, the valves VM, V1, V2, V3, and V4 can be set at any position that can control the main channel 100 and each of the branch channels P1, P2, P3, and P4, and can be, for example, pneumatic valves or electromagnetic valves, but the present application is not limited thereto. In one embodiment, each of the branch channels P can be assembled in a modular manner, and as long as the connection between each of the branch channels P and the main channel 100 after assembly is ensured, they can be arranged in series, parallel, or a combination thereof, and the present application does not limit the actual assembly method. In this way, the application flexibility of the spraying device 1 of the present application in different processes can be increased.
[0046] See also Figure 5 As shown, it is a three-dimensional schematic diagram of a spraying system for a semiconductor substrate provided by an embodiment of the present application. The present application further provides a spraying system SYS, which includes: at least one semiconductor substrate 2, a spraying device 1 as described in any of the aforementioned embodiments, a plurality of flow controllers 4 and a control module 5. The spraying device 1 is arranged above the at least one semiconductor substrate 2. The plurality of flow controllers 4 are respectively connected to the valves VM, V1, V2, V3, V4 of the main channel 100 and each of the at least one branch channel P, so as to monitor the flow of the gas G or the fluid F1, F2, F3, F4. The control module 5 is signal-connected to the spraying device 1 and the plurality of flow controllers 4, so as to regulate the flow of the gas G or the fluid F1, F2, F3, F4, and the opening or closing of the main channel 100 and each of the at least one branch channel P. Among them, the control module 5 can be a programmable logic controller (PLC), an industrial personal computer (IPC) or other control devices or equipment with calculation and control functions; the multiple flow controllers 4 can be a fluid flow rate controller (Mass Flow Controller, MFC), but the present application is not limited to this.
[0047] In one embodiment, the spraying system SYS of the present application further includes: a semiconductor substrate carrier 3, at least one flow channel supply pipeline 6 and a main flow channel supply pipeline 7. The number of the at least one flow channel supply pipeline 6 can be determined according to the number of the at least one flow channel P of the spraying device 1. The at least one flow channel supply pipeline 6 can be respectively connected to, for example, a liquid storage tank or other storage device, and the at least one flow channel supply pipeline 6 can be connected to, for example, a liquid nitrogen pressurized storage tank, a gas cylinder or other storage device, and the present application is not limited thereto. The semiconductor substrate carrier 3 is disposed below the at least one semiconductor substrate 2 to carry the at least one semiconductor substrate 2. The semiconductor substrate carrier 3 includes a carrying turntable 31 and a carrying shaft 32, the carrying turntable 31 can carry the at least one semiconductor substrate 2, and the carrying shaft can be further connected to a driving device (not shown). Therefore, when the spraying device 1 in the spraying system SYS of the present application is spraying, the semiconductor substrate carrier 3 can be driven to rotate by the driving device, and the at least one semiconductor substrate 2 arranged thereon can be rotated together, so that the fluid and gas sprayed on the at least one semiconductor substrate 2 can be detached at a specific speed, thereby reducing the risk of over-etching and decreased yield.
[0048] It is worth mentioning that the aforementioned plurality of flow controllers 4 are respectively connected to the valves VM, V1, V2, V3, V4 of the main channel 100 and each of the at least one branch channel P, and the control module 5 is signal-connected to the spray device 1 and the plurality of flow controllers 4 and executes the instructions issued by the control module 5. The present application does not limit the specific implementation of the aforementioned connection. In addition, the preset state of each of the valves VM, V1, V2, V3, V4 of the present application is closed, so that each opening or closing of each of the valves VM, V1, V2, V3, V4 is controlled by the control module 5.
[0049] Next, a specific embodiment of the spraying system SYS of the present application for spraying gas and fluid will be described below. At the same time, the present application further provides an operating method for a semiconductor substrate using the spraying system SYS as described in any of the aforementioned embodiments. The operating method can be implemented by executing the spraying system SYS of the present application and controlling the at least one branch flow channel P and the main flow channel 100 to spray gas and fluid. The specific implementation of the spraying device 1 in the operating method of the spraying system SYS of the present application has been seen in the aforementioned embodiments, so it will not be repeated here.
[0050] [Example of spraying a single fluid and spraying a gas after spraying deionized water]
[0051] In one embodiment, when the control module 5 controls the second valve V2 to open, the second fluid F2 flows from the second branch channel P2 into the main channel 100, flows to the main channel outlet 100O, and is then sprayed on the at least one semiconductor substrate 2. When one of the plurality of flow controllers 4 of the second valve V2 detects that the opening time of the second valve V2 has reached a preset time value, the control module 5 controls the second valve V2 to close, and controls the first valve V1 to open. Then, the first fluid F1 flows from the first branch channel P1 into the main channel 100, flows to the main channel outlet 100O, and is then sprayed on the at least one semiconductor substrate 2.
[0052] When one of the plurality of flow controllers 4 of the first valve V1 detects that the opening time of the first valve V1 has reached the preset time value, the control module 5 controls the first valve V1 to close, and controls the main valve VM to open. Then, the gas G flows into the main channel 100 from the main channel inlet 100I, flows to the main channel outlet 100O, and is sprayed on the at least one semiconductor substrate 2. Then, when one of the plurality of flow controllers 4 of the main valve VM detects that the main valve VM has reached the preset time value, the control module 5 controls the main valve VM to close. Figure 6 As shown, it is a flow chart of an operation method of a spraying device for a semiconductor substrate provided by an embodiment of the present application. Specifically, in this embodiment, the operation method of the spraying device 1 may include the following steps:
[0053] Step S101: opening the second valve V2 and spraying the second fluid F2;
[0054] Step S201: close the second valve V2 and open the first valve V1;
[0055] Step S301: opening the first valve V1 and spraying the first fluid F1;
[0056] Step S401: close the first valve V1 and open the main valve VM;
[0057] Step S501: opening the main valve VM and spraying the gas G; and
[0058] Step S601: close the main valve VM.
[0059] The steps of the aforementioned operation method can be performed through the spraying system SYS. Specifically, after spraying the chemical liquid, deionized water and nitrogen gas can be sprayed successively to remove the chemical liquid remaining in the main channel 100 and on the at least one semiconductor substrate 2. Other details about the spraying system SYS and the spraying device 1 have been described in the aforementioned embodiment, so they will not be repeated here.
[0060] [Example of spraying plural fluids and spraying gas after spraying deionized water]
[0061] In another embodiment, when the control module 5 controls the second valve V2 and the third valve V3 to open, the second fluid F2 flows from the second branch channel P2 into the main channel 100 and the third fluid F3 flows from the third branch channel P3 into the main channel 100, the second fluid F2 and the third fluid F3 are mixed in the main channel 100 and flow toward the main channel outlet 100O, and are sprayed on the at least one semiconductor substrate 2 at the same time. When the plurality of flow controllers 4 of the second valve V2 and the third valve V3 detect that the opening time of the second valve V2 and the third valve V3 has reached the preset time value, the control module 5 controls the second valve V2 and the third valve V3 to close, and controls the first valve V1 to open. Then, the first fluid F1 flows from the first branch channel P1 into the main channel 100, flows toward the main channel outlet 100O, and is sprayed on the at least one semiconductor substrate 2.
[0062] As mentioned above, when one of the plurality of flow controllers 4 of the first valve V1 detects that the opening time of the first valve V1 has reached the preset time value, the control module 5 controls the first valve V1 to close and controls the main valve VM to open. Then, the gas G flows into the main channel 100 from the main channel inlet 100I and flows to the main channel outlet 100O, and then sprays on the at least one semiconductor substrate 2. Then, when one of the plurality of flow controllers 4 of the main valve VM detects that the opening time of the main valve VM has reached the preset time value, the control module 5 controls the main valve VM to close.
[0063] See also Figure 7 As shown, it is a flow chart of an operation method of a spraying device for a semiconductor substrate provided by another embodiment of the present application. Specifically, in this embodiment, the operation method of the spraying device 1 may include the following steps:
[0064] Step S102: opening the second valve V2 and the third valve V3 to mix and spray the second fluid F2 and the third fluid F3;
[0065] Step S202: closing the second valve V2 and the third valve V3, and controlling the first valve V1 to open; and
[0066] Step S301 to step S601.
[0067] The steps of the aforementioned operation method can be performed through the spraying system SYS. Specifically, a plurality of fluids (i.e., chemical liquids) can be mixed in the main channel 100 and then sprayed, followed by spraying deionized water and nitrogen gas in sequence to remove the chemical liquids remaining in the main channel 100 and on the at least one semiconductor substrate 2. Other details about the spraying system SYS and the spraying device 1 have been described in the aforementioned embodiments, and thus will not be repeated here.
[0068] The spraying system SYS and the operating method of the spraying device 1 of the present application can enable the spraying device 1 to have a single main channel 100 and the main channel outlet 100O through the aforementioned implementation mode, so that the gas G and the fluids F1, F2, F3, F4 can all be sprayed on the at least one semiconductor substrate 2 from the main channel outlet 100O in a consistent manner, without the need to use different nozzles when spraying different gases or fluids. It can also reduce the time that unnecessary chemical liquid drops fall on the surface of the at least one semiconductor substrate 2, thereby further improving the overall yield of the semiconductor process and reducing the risk of over-etching.
[0069] It is worth mentioning that the plurality of flow controllers 4 in the embodiment of the present application control the flow of the gas G and the fluids F1, F2, F3, F4 through the opening time of the valves VM, V1, V2, V3, V4. The plurality of flow controllers 4 can also be replaced by a simple flow meter in other embodiments, or replaced by a simple timer under the premise that the fluid flow rate is known. In this way, the overall cost of the spraying system SYS of the present application can be reduced.
[0070] The present application chooses to determine whether the operation is completed by detecting whether the time reaches a preset value, which helps to speed up the overall process and only requires regular calibration of the flow controller without wasting time to clearly determine the flow rate of the gas or fluid flowing through each flow channel.
[0071] Therefore, the spraying device 1 and the spraying system SYS for semiconductor substrates provided by the present application can reduce the problem that when the valve opening time reaches the preset time value in the semiconductor process, there is still fluid in the main channel 100 or the at least one branch channel P or drips on the surface of the at least one semiconductor substrate 2, thereby avoiding the formation of crystals in the liquid medicine and improving the yield or production rate of the overall process (for example, improving the cleaning yield after wafer etching), while reducing the number of times expensive consumables are replaced and reducing process costs. In addition, since each of the valves VM, V1, V2, V3, V4 is located before each of the branch channels P, it can effectively prevent the fluid from dripping from the main channel outlet 100O after each of the valves VM, V1, V2, V3, V4 is closed. Each branch flow channel P, whether it is a single component or mixed with other fluids, flows out from the same outlet, namely the main flow channel outlet 100O, thereby further preventing the problem of different nozzles or different flow channels being difficult to accurately position at the same position during operation, thereby causing a decrease in yield, and making the fluid sprayed onto the at least one semiconductor substrate 2 consistent. In addition, by spraying the gas G after spraying the deionized water, the residual water vapor in the main flow channel 100 and the main flow channel outlet 100O can also be quickly removed, thereby preventing the formation of water vapor and causing the spraying device 1 to be damaged.
[0072] The above is a detailed introduction to a spraying device and a spraying system for a semiconductor substrate provided in the embodiments of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the technical solution and its core idea of the present application. Ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some of the technical features therein with equivalents; and these modifications or replacements do not make the essence of the corresponding technical solution deviate from the scope of the technical solution of the embodiments of the present application.
Claims
1. A spraying device for semiconductor substrates, used for spraying at least one semiconductor substrate, characterized in that: The spraying device comprises: A main channel having a main channel inlet and a main channel outlet, for allowing gas to flow from the main channel inlet to the main channel outlet; and At least one branch flow channel is connected to the main flow channel, and each of the at least one branch flow channel has a branch flow channel inlet for allowing fluid to flow from the branch flow channel inlet to the main flow channel outlet.
2. The spraying device for a semiconductor substrate according to claim 1, characterized in that: The at least one flow channel further comprises: A first branch flow channel having a first branch flow channel inlet; and A second branch flow channel having a second branch flow channel inlet; The first branch channel is closer to the main channel inlet of the main channel than the second branch channel, so that the first fluid flows into the first branch channel from the first branch channel inlet and then enters the main channel, and then flows to the main channel outlet after passing through the second branch channel.
3. The spraying device for a semiconductor substrate according to claim 2, characterized in that: The at least one flow channel further comprises: a third branch flow channel having a third branch flow channel inlet; Among them, the third branch channel is farther away from the main channel inlet of the main channel than the first branch channel and the second branch channel, so that the first fluid flows into the first branch channel from the first branch channel inlet and then enters the main channel, and then flows to the main channel outlet after passing through the second branch channel and the third branch channel in sequence.
4. The spraying device for a semiconductor substrate according to claim 3, characterized in that: The second branch channel inlet is for a second fluid to flow from the second branch channel into the main channel, and the third branch channel inlet is for a third fluid to flow from the third branch channel into the main channel. The second fluid and the third fluid enter the main channel, mix, and flow toward the main channel outlet.
5. The spraying device for a semiconductor substrate according to claim 1, characterized in that: The at least one flow channel further comprises: A first branch flow channel having a first branch flow channel inlet; and A second branch flow channel having a second branch flow channel inlet; Wherein, the first branch flow channel is connected to the main flow channel, and the second branch flow channel is connected to the main flow channel, and the distances in the vertical direction between the main flow channel inlet and the main flow channel entrance are the same.
6. The spraying device for a semiconductor substrate according to claim 1, characterized in that: The main flow channel inlet and the branch flow channel inlet are respectively provided with valves for controlling the opening or closing of the main flow channel and each of the at least one branch flow channel.
7. A spraying system, characterized in that: The spraying system comprises: at least one semiconductor substrate; The spraying device according to claim 1, arranged above the at least one semiconductor substrate, wherein the main flow channel inlet and the branch flow channel inlet of the spraying device are respectively provided with valves for controlling the opening or closing of the main flow channel and each of the at least one branch flow channel; A plurality of flow controllers, respectively connected to the valves of the main flow channel and each of the at least one branch flow channel, for monitoring the flow of the gas or the fluid; and The control module is signal-connected to the spray device and the plurality of flow controllers, and is used to regulate the flow of the gas or the fluid, and the opening or closing of the main flow channel and each of the at least one branch flow channels.
8. The spraying system according to claim 7, characterized in that The at least one branch flow channel further includes a first branch flow channel and a second branch flow channel, and the main flow channel, the first branch flow channel and the second branch flow channel respectively have a main valve, a first valve and a second valve; The first branch channel has a first branch channel inlet for allowing a first fluid to flow from the first branch channel inlet to the main channel outlet, and the second branch channel has a second branch channel inlet for allowing a second fluid to flow from the second branch channel inlet to the main channel outlet; The first branch flow channel is closer to the main flow channel inlet of the main flow channel than the second branch flow channel, so that the first fluid flows from the first branch flow channel inlet into the first branch flow channel and then into the main flow channel, and then flows to the main flow channel outlet after passing through the second branch flow channel; The main valve, the first valve and the second valve are used to control the opening or closing of the main flow channel, the first branch flow channel and the second branch flow channel respectively, and are respectively connected to one of the plurality of flow controllers.
9. The spraying system according to claim 8, characterized in that The at least one flow channel further comprises: A third branch channel has a third branch channel inlet for allowing a third fluid to flow from the third branch channel inlet to the main channel outlet; Among them, the first branch channel is closer to the main channel inlet of the main channel than the second branch channel and the third branch channel, and the second branch channel is closer to the main channel inlet of the main channel than the third branch channel, so that the first fluid flows into the first branch channel from the first branch channel inlet and then enters the main channel, and then flows to the main channel outlet after passing through the second branch channel and the third branch channel in sequence, and the second fluid flows into the second branch channel from the second branch channel inlet and then enters the main channel, and then flows to the main channel outlet after passing through the third branch channel.