Insulated gate bipolar transistor
By adopting a dual-chip structure in an insulated gate bipolar transistor and connecting the A chip with aluminum wires to the collector and gate leads, the existing IGBT has solved the problem of large switching losses and low reliability, and achieved smaller switching losses and Higher power density and reliability.
Patent Information
- Application Number
- CN202323629896.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2023-12-29
- Publication Date
- 2025-02-07
- Estimated Expiration
- 2033-12-29
AI Technical Summary
Existing insulated gate bipolar transistors (IGBTs) have large switching losses under the same current and voltage conditions, and the single-chip structure has low reliability, which makes it easy for the entire device to be replaced due to chip failure.
An insulated gate bipolar transistor with a dual-chip structure is formed by setting chip A and chip B in the transistor module, and connecting chip A and collector leads and gate leads with aluminum wires to form a dual-chip structure to reduce switching losses.
Under the same current and voltage conditions, the dual-chip structure IGBT has smaller switching losses, which improves power density and reliability, enables greater power output in a limited space, and when some chips are damaged, the other part remains Available.
Smart Images
Figure CN222440601U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductors, in particular to an insulated gate bipolar transistor. Background Art
[0002] The inverter is a key component of the car. The main semiconductor chip used is IGBT. The inverter always operates in a similar way. Its design should minimize switching losses and maximize thermal efficiency. IGBT is the core electronic device of the electric vehicle inverter, and its importance is similar to the CPU in a computer.
[0003] IGBT (Insulated Gate Bipolar Transistor): Insulated gate bipolar transistor, which combines the advantages of MOS's high input impedance and GTR's low on-state voltage drop. GTR has a low saturation voltage drop, but a large driving current, while MOS has a very small driving power but a large on-state voltage drop. In existing insulated gate bipolar transistors, they are generally single-chip structures. Therefore, under the same current and voltage conditions, single-chip IGBTs may have larger switching losses. Once a chip fails, the entire device may need to be replaced, reducing the reliability of the device. Utility Model Content
[0004] The utility model aims to solve the shortcomings in the prior art and proposes an insulated gate bipolar transistor.
[0005] In order to achieve the above purpose, the utility model adopts the following technical solutions:
[0006] An insulated gate bipolar transistor comprises a transistor module, wherein bare copper is arranged at the center of the transistor module, an A chip and a B chip are arranged below the bare copper and on the transistor module, respectively, a collector lead and a gate lead are arranged in sequence at the bottom of the transistor module, the A chip and the collector lead are connected by a first aluminum wire, and the A chip and the gate lead are connected by a second aluminum wire.
[0007] Preferably, a third aluminum wire is connected between the A chip and the gate lead, and the center point of the third aluminum wire is fixedly connected to the B chip.
[0008] Preferably, an emitter lead is connected between the collector lead and the gate lead.
[0009] Preferably, the size of the first aluminum wire is 5 mil, and the sizes of the second aluminum wire and the third aluminum wire are 15 mil.
[0010] Preferably, the outer surfaces of the collector lead, the gate lead and the emitter lead are sheathed with insulating sheathed wires.
[0011] Preferably, the thickness of the A chip and the B chip is 65um±5um.
[0012] The beneficial effects of the utility model are:
[0013] The insulated gate bipolar transistor adopts a dual-chip structure. Under the conditions of the same current and voltage, the dual-chip IGBT has smaller switching losses, thereby achieving greater power handling capacity and improving power density in the case of the same size, which is beneficial to achieving greater power output in a limited space. At the same time, the dual-chip structure can ensure that when one part of the chip is damaged, the other part can still be used, thereby improving overall reliability.
[0014] In the equivalent circuit model diagram of the insulated gate bipolar transistor, a PNP transistor is connected in series with a MOS tube, so that the PNP transistor provides current enhancement, accelerates the injection and discharge of charges, helps to reduce the rise and fall time of the voltage and current during the switching process, thereby improving the switching speed of the device. The PNP transistor also helps to reduce the conduction voltage drop of the MOS tube and improves the conduction characteristics of the device. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] Figure 1 A schematic diagram of the overall structure of an insulated gate bipolar transistor proposed by the utility model;
[0016] Figure 2 This is an equivalent circuit model diagram of an insulated gate bipolar transistor proposed by the utility model.
[0017] In the figure:
[0018] 1. Transistor module; 2. Bare copper; 3. A chip; 4. B chip; 5. Collector lead; 6. Gate lead; 7. Emitter lead; 8. First aluminum wire; 9. Second aluminum wire; 10. Third aluminum wire. DETAILED DESCRIPTION
[0019] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all of the embodiments.
[0020] The contents not described in detail in this specification belong to the prior art known to professional and technical personnel in this field.
[0021] The standard parts used in the utility model can all be purchased from the market, and special-shaped parts can be customized according to the instructions and the drawings. The specific connection methods of each part adopt the conventional means such as mature bolts, rivets, welding, etc. in the existing technology. The machinery, parts and equipment all adopt the conventional models in the existing technology, and the circuit connection adopts the conventional connection method in the existing technology, which will not be described in detail here.
[0022] Example:
[0023] Reference Figure 1-2 An insulated gate bipolar transistor includes a transistor module 1, a bare copper 2 is arranged at the center of the transistor module 1, an A chip 3 and a B chip 4 are arranged below the bare copper 2 and on the transistor module 1, a collector lead 5 and a gate lead 6 are arranged at the bottom of the transistor module 1 in sequence, the A chip 3 and the collector lead 5 are connected by a first aluminum wire 8, and the A chip 3 and the gate lead 6 are connected by a second aluminum wire 9.
[0024] A third aluminum wire 10 is also connected between the A chip 3 and the gate lead 6 , and the center point of the third aluminum wire 10 is fixedly connected to the B chip 4 .
[0025] An emitter lead 7 is connected between the collector lead 5 and the gate lead 6 .
[0026] The size of the first aluminum wire 8 is 5 mil, and the sizes of the second aluminum wire 9 and the third aluminum wire 10 are 15 mil.
[0027] The outer surfaces of the collector lead 5 , the gate lead 6 , and the emitter lead 7 are sheathed with insulating sheathed wires.
[0028] The thickness of the A chip 3 and the B chip 4 is 65um±5um.
[0029] In this embodiment, the A chip 3 and the B chip 4 are encapsulated inside the transistor module 1, the A chip 3 is connected to the collector lead 5 by using the first aluminum wire 8, the A chip 3 is connected to the gate lead 6 by the third aluminum wire 10, and the third aluminum wire passes through the B chip 4 to connect the A chip 3 to the B chip 4, so that the transistor constitutes a dual-chip structure. The dual-chip structure of the transistor can improve the reliability of the overall device. Since the dual-chip structure can reduce the size of each chip, under the conditions of the same current and voltage, the IGBT of the dual-chip structure has smaller switching losses, thereby achieving greater power tolerance under the same size, improving power density, and being beneficial to achieving greater power output in a limited space. At the same time, the dual-chip structure can make it possible to use the other part when one part of the chip is damaged, thereby improving the overall reliability. Since the dual-chip structure can reduce the size of each chip, under the conditions of the same power output, the thermal resistance of each chip is smaller, which is conducive to heat dissipation, thereby improving the overall thermal stability.
[0030] like Figure 2 The figure shows an equivalent circuit model diagram of the insulated gate bipolar transistor, which connects a PNP transistor and a MOS tube in series, so that when the insulated gate bipolar transistor is in the on state, the PNP transistor provides current enhancement, accelerates the injection and discharge of charges, and helps to reduce the rise and fall time of the voltage and current during the switching process, thereby improving the switching speed of the device. In addition, the PNP transistor also helps to reduce the on-state voltage drop of the MOS tube and improves the on-state characteristics of the device.
[0031] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.
[0032] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present utility model, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.
[0033] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes within the technical scope disclosed by the present invention according to the technical scheme and the utility model concept of the present invention, which should be covered by the protection scope of the present invention.
Claims
1. An insulated gate bipolar transistor, comprising a transistor module (1), characterized in that: A bare copper (2) is arranged at the center of the transistor module (1); an A chip (3) and a B chip (4) are arranged below the bare copper (2) and on the transistor module (1); a collector lead (5) and a gate lead (6) are arranged in sequence at the bottom of the transistor module (1); the A chip (3) and the collector lead (5) are connected via a first aluminum wire (8); and the A chip (3) and the gate lead (6) are connected via a second aluminum wire (9).
2. An insulated gate bipolar transistor according to claim 1, characterized in that: A third aluminum wire (10) is also connected between the A chip (3) and the gate lead (6), and the center point of the third aluminum wire (10) is fixedly connected to the B chip (4).
3. The insulated gate bipolar transistor according to claim 1, characterized in that: An emitter lead (7) is connected between the collector lead (5) and the gate lead (6).
4. The insulated gate bipolar transistor according to claim 1, characterized in that: The size of the first aluminum wire (8) is 5 mil, and the sizes of the second aluminum wire (9) and the third aluminum wire (10) are 15 mil.
5. The insulated gate bipolar transistor according to claim 1, characterized in that: The outer surfaces of the collector lead (5), the gate lead (6) and the emitter lead (7) are sheathed with insulating sheathed wires.
6. The insulated gate bipolar transistor according to claim 1, characterized in that: The thickness of the A chip (3) and the B chip (4) is 65um±5um.