Wafer carrier structure capable of rotating under control of air source and wafer production equipment

Abstract

The utility model provides a wafer carrier structure capable of rotating under the control of an air source and wafer production equipment, and relates to the technical field of semiconductor equipment. Comprising a reaction chamber formed by a base and an upper shell, the reaction chamber is connected with a source inlet channel to input reaction gas, the carrying table is arranged in the reaction chamber, a plurality of gas channels distributed around the circumference are arranged on the bottom face of the carrying table, and the gas channels are communicated with the gas channels. The air channel is communicated with a driving air channel so as to be communicated to the air channel to drive the carrying table to rotate, and a plurality of air holes are formed in the side edge of the carrying table around the circumference and used for being communicated with the air channel. According to the scheme, the reaction uniformity is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor equipment, in particular to a wafer carrier structure and wafer production equipment with gas source controlled rotation. Background Art

[0002] During the deposition process, the wafer is usually placed on a carrier, and then the reaction source gas is introduced into the reaction chamber, and deposition can be achieved under certain conditions. In order to achieve uniform reaction, it is generally necessary to control the rotation of the carrier. The current solution for controlling the rotation of the carrier generally uses a rotating motor control. However, the installation of the motor requires a certain installation space, which will undoubtedly increase the volume of the entire device. On the other hand, when the carrier is rotating, the flow rate in the middle is faster. Based on the Bernoulli principle, the edge areas on both sides of the carrier will lack the reaction source gas, resulting in a decrease in uniformity and affecting the process effect. Utility Model Content

[0003] The utility model discloses a gas source controlled rotating wafer carrier structure, aiming to improve the above mentioned problems.

[0004] The utility model adopts the following scheme:

[0005] The present application provides a wafer carrier structure with gas source controlled rotation, including a reaction chamber formed by a base and an upper shell, the reaction chamber being connected to a source inlet channel for inputting reaction gas, including: a carrier arranged in the reaction chamber, a bottom surface of the carrier being provided with a plurality of gas channels distributed around a circle, the gas channels being connected with a driving gas channel to be connected to the gas channels, and then the carrier is driven to rotate by introducing driving gas, a plurality of air holes connected to the gas channels are provided around the circumference of the side of the carrier to introduce part of the driving gas entering the gas channels into the reaction chamber.

[0006] Furthermore, the base includes a mounting groove suitable for mounting the carrier, the mounting groove is connected to the driving gas channel, and the mounting groove is provided with a plurality of air inlet channels connected to the driving gas channel, and the plurality of air inlet channels are inclined to the central axis direction of the carrier.

[0007] Furthermore, the air inlet channels are evenly distributed around the circumference of the central axis of the carrier, and are all inclined in a clockwise direction or a counterclockwise direction.

[0008] Furthermore, the carrier is movably disposed in the mounting groove, and the driving gas passage is suitable for introducing driving gas into the gas passage to drive the carrier to rotate in the mounting groove.

[0009] Furthermore, the air channels are inclined with respect to the diameter direction of the circular carrier, and the inclination angle of each air channel with respect to the diameter direction of the carrier is the same as the inclination direction.

[0010] Furthermore, the air passage and the air inlet channel have the same rotation direction when projected onto the bottom surface of the carrier.

[0011] Furthermore, a limiting block is arranged above the mounting groove, and the limiting block is suitable for limiting the movable height of the carrier in the mounting groove.

[0012] Furthermore, a movable tray is arranged on the carrier; and an air passage is arranged on the side of the movable tray.

[0013] Furthermore, the driving gas channel is suitable for introducing an inert gas and / or any mixed reaction gas that is the same as the source inlet channel.

[0014] The utility model also provides a wafer production device, comprising any one of the above-mentioned wafer carrier structures whose rotation is controlled by a gas source.

[0015] Beneficial effects:

[0016] The utility model provides a gas channel distributed around the circumference of the carrier for driving the carrier to rotate after the gas is introduced, and at the same time, air holes are provided on the side of the carrier. The driving gas channel introduces inert gas and the same reaction gas as the source channel, so that the concentration of the reaction gas on the side of the carrier can be supplemented during the gas intake process to improve the uniformity of the reaction. Furthermore, when other gas sources are introduced into the driving gas channel, the temperature of the reaction chamber can also be controlled. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a schematic diagram of the appearance of a wafer carrier structure with gas source controlling rotation according to an embodiment of the utility model;

[0018] Figure 2 It is a cross-sectional schematic diagram of a wafer carrier structure with gas source controlling rotation according to an embodiment of the utility model;

[0019] Figure 3 It is an axonometric schematic diagram of another cross-sectional structure of a wafer carrier structure that controls rotation with a gas source according to an embodiment of the utility model;

[0020] Figure 4 It is a schematic diagram of a base of a wafer carrier structure with gas source controlling rotation according to an embodiment of the utility model;

[0021] Figure 5 It is a schematic diagram of a wafer carrier structure with a gas source controlling rotation according to an embodiment of the utility model;

[0022] Figure 6 This is a schematic diagram of the air intake of a wafer carrier structure with a gas source controlling rotation according to an embodiment of the utility model;

[0023] Figure 7 This is a schematic diagram of a gas source control for a wafer carrier structure that controls rotation according to an embodiment of the utility model;

[0024] Icons: base 1, mounting groove 11, driving gas channel 12, air inlet channel 13, upper shell 2, reaction chamber 3, source inlet channel 4, carrier 5, air channel 51, air hole 52, limiting block 6. DETAILED DESCRIPTION

[0025] Combination Figures 1 to 7 As shown, this embodiment provides a wafer production device, including a wafer carrier structure that can be rotated by gas source control. The wafer carrier structure that can be rotated by gas source control includes a reaction chamber 3 formed by a base 1 and an upper shell 2, and the reaction chamber 3 is connected to a source inlet channel 4 for inputting reaction gas, including: a carrier 5 arranged in the reaction chamber, a bottom surface of the carrier 5 is provided with a plurality of gas channels 51 distributed around the circumference, the gas channel 51 is connected to a driving gas channel 12 to connect to the gas channel 51 and drive the carrier 5 to rotate, and a plurality of gas holes 52 connected to the gas channel 51 are provided around the circumference of the side of the carrier 5 to introduce part of the driving gas entering the gas channel 51 into the reaction chamber 3.

[0026] Combination Figures 1 to 4 As shown, in this embodiment, the base 1 is provided with a driving gas channel 12, one end of which is suitable for connecting with a variety of gas sources, such as a mixture of inert gas and reaction gas, so as to improve the reaction uniformity around the carrier 5. In another embodiment, hydrogen can be introduced synchronously to reduce the temperature of the reaction chamber 3, or nitrogen can be introduced to increase the temperature of the reaction chamber 3. The base 1 is provided with a mounting groove 11 for mounting the carrier 5. The mounting groove 11 can be set as a circle, and a through hole is set in the middle position for connecting with the rotating shaft of the carrier 5. A plurality of air inlet channels 13 connected with the driving gas channel 12 are provided below the mounting groove 11. The plurality of air inlet channels 13 are inclined to the central axis direction of the carrier 5. Further, the air inlet channels 13 are evenly distributed around the central axis of the carrier 5, and the projections on the carrier 5 are all inclined in the clockwise direction or the counterclockwise direction, so that the same direction of force can be provided to the carrier 5 when the driving gas is introduced. In a preferred embodiment, a limiting block 6 is disposed above the installation groove 11, and the limiting block 6 is suitable for limiting the movable height of the carrier 5 in the installation groove 11. The limiting block 6 is detachably mounted on the base 1.

[0027] Combination Figures 1 to 5As shown, the carrier 5 of this embodiment is movably arranged in the mounting groove 11, which can be arranged in a circular shape. The driving gas channel 12 is suitable for introducing the driving gas into the air channel 51 to drive the carrier 5 to rotate in the mounting groove 11. Specifically, the carrier 5 here has a certain upper and lower movable space in the mounting groove 11, and a rotating shaft is arranged at the bottom thereof to be rotatably installed in the mounting groove 11. A plurality of the air channels 51 are arranged on the bottom plane of the carrier 5, and the extension direction of the air channels 51 is inclined to the diameter direction of the circular carrier 5, and the inclination angle and inclination direction of each air channel 51 to the diameter direction of the carrier 5 are the same, so as to ensure that when the driving gas acts on the air channel 51, the carrier 5 rotates smoothly. Here, the air duct 51 and the air inlet channel 13 have the same rotation direction as the projection on the bottom surface of the carrier 5. The same rotation direction means that the inclination direction of the air duct 51 on the bottom surface of the carrier 5 is the same clockwise or counterclockwise as the projection of the air inlet channel 13 on the bottom surface of the carrier 5, so that driving the carrier 5 to rotate does not require effort and reduces gas waste.

[0028] A plurality of air holes 52 connected to the gas channel 51 are arranged on the side of the carrier 5. The arrangement of the air holes 52 allows a portion of the gas entering from the driving gas channel 12 to enter the reaction chamber 3. Therefore, when the driving gas channel 12 introduces an inert gas, it is only used to drive the carrier 5 to rotate. When the driving gas channel 12 introduces a mixed gas of an inert gas and the same reaction gas as the source channel 4, it can drive the carrier 5 to rotate and can also compensate or dilute the concentration of the reaction gas on the side of the carrier 5 to solve the problem of insufficient reaction uniformity caused by insufficient reaction gas concentration on the side of the carrier 5 due to the rotation of the carrier 5, and also solve the problem of concentration dilution caused by the inevitable entry of the inert gas into the reaction chamber 3. In other embodiments, hydrogen or nitrogen can also be introduced through the driving gas channel 12 to assist in controlling the temperature in the reaction chamber. This is because different gases have different thermal conductivities, so the temperature in the reaction chamber 3 can be controlled by controlling the type of gas introduced.

[0029] In this embodiment, a movable tray is provided on the carrier 5 for placing the wafers to facilitate taking and placing. Preferably, a gas passage is provided on the side of the movable tray to facilitate the gas entering from the air hole 52 to enter the reaction chamber 3.

[0030] This embodiment controls different gases to enter the driving gas channel 12 to drive the carrier 5 to rotate. On the one hand, the rotation of the carrier 5 can be achieved without a motor as a control component. On the other hand, the flow rate of the purge gas and the purge gas dispersion position can be effectively controlled, thereby improving the uniformity of the chip reaction above the carrier 5.

[0031] It should be understood that the above are only preferred implementations of the present utility model, and the protection scope of the present utility model is not limited to the above embodiments. All technical solutions under the concept of the present utility model belong to the protection scope of the present utility model.

[0032] The above description of the drawings used in the implementation manner only shows certain embodiments of the utility model and should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying creative work.

Claims

1. A gas source controlled rotating wafer carrier structure, comprising a reaction chamber formed by a base and an upper shell, wherein the reaction chamber is connected to a source inlet channel for inputting reaction gas, characterized in that: Also includes: A carrier is arranged in the reaction chamber, and a plurality of air channels distributed around the circumference are arranged on the bottom surface of the carrier, and the air channels are connected to a driving gas channel to connect to the air channels, and then the carrier is driven to rotate by introducing driving gas, and a plurality of air holes connected to the air channels are arranged around the circumference on the side of the carrier to introduce part of the driving gas entering the air channels into the reaction chamber.

2. The gas source controlled rotating wafer stage structure according to claim 1, characterized in that: The base includes a mounting groove suitable for mounting the carrier, the mounting groove is connected to the driving gas channel, and a plurality of air inlet channels connected to the driving gas channel are arranged on the mounting groove, and the plurality of air inlet channels are inclined to the central axis direction of the carrier.

3. The wafer stage structure with gas source controlled rotation according to claim 2, characterized in that: The air inlet channels are evenly distributed around the central axis of the carrier and are all inclined in a clockwise direction or a counterclockwise direction.

4. The gas source controlled rotating wafer stage structure according to claim 3, characterized in that: The carrier is movably disposed in the mounting groove, and the driving gas passage is suitable for introducing driving gas into the gas passage to drive the carrier to rotate in the mounting groove.

5. The gas source controlled rotating wafer stage structure according to claim 4, characterized in that: The air channels are inclined to the diameter direction of the circular carrier, and the inclination angle of each air channel to the diameter direction of the carrier is the same as the inclination direction.

6. The gas source controlled rotating wafer stage structure according to claim 5, characterized in that: The air channel and the air inlet channel have the same rotation direction when projected onto the bottom surface of the carrier.

7. The gas source controlled rotating wafer stage structure according to claim 5, characterized in that: A limiting block is arranged above the installation groove, and the limiting block is suitable for limiting the movable height of the carrier in the installation groove.

8. The gas source controlled rotating wafer stage structure according to claim 1, characterized in that: A movable tray is arranged on the carrier; and an air passage is arranged on the side of the movable tray.

9. The gas source controlled rotating wafer stage structure according to any one of claims 1 to 8, characterized in that: The driving gas channel is suitable for introducing an inert gas and / or any mixed reaction gas that is the same as the source inlet channel.

10. A wafer production device, characterized in that: A wafer carrier structure comprising the gas source controlled rotation as described in any one of claims 1-9.

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