Crosslinking type semiconductor electric internal shielding plastic protective shell

Abstract

The utility model relates to the technical field of semiconductor protection, and discloses a cross-linking type semiconductor electric internal shielding plastic protective shell, which solves the problems that the existing semiconductor protective shell is poor in electric internal shielding effect and the shielding material is thick and heavy, and comprises a plastic protective shell body, an inner interlayer assembly used for electric inner shielding is arranged in the plastic protective shell and comprises an anti-corrosion layer fixedly connected to the outer side of the plastic protective shell, a wear-resistant layer is fixedly connected to one side of the anti-corrosion layer, a wear-resistant layer is fixedly connected to one side of the wear-resistant layer, and an electric shielding layer is fixedly connected to one side of the wear-resistant layer. The electric shielding layer is a component formed by mixing a polyethylene material and a graphene material with epoxy resin as a cross-linking agent matrix, one side of the electric shielding layer is fixedly connected with the buffer layer, one side of the buffer layer is fixedly connected with the antistatic layer, and the effects of enhancing the anti-electromagnetic interference and reducing the weight and the size are achieved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor protection, in particular to a cross-linked semiconductor electrical internal shielding plastic protective shell. Background Art

[0002] A semiconductor is a material with a resistance between that of a conductor and an insulator, and a conductivity between that of a metal and a non-metal. Its conductivity can be changed by controlling external conditions such as temperature or applying an electric field. Semiconductor materials are widely used in electronics and optoelectronics, such as electronic devices, optoelectronic devices, integrated circuits, etc. However, the electrical internal shielding in a semiconductor protective shell is made of conductive materials and covered around the electronic components to block the influence of external electromagnetic radiation or electrostatic interference. Existing materials cannot effectively resist electromagnetic interference. At the same time, these shielding materials have a certain thickness, resulting in a larger weight and volume of the protective shell, which increases the overall weight and size of the device.

[0003] In view of the above problems, a cross-linked semiconductor electrical internal shielding plastic protective shell is proposed to solve the above problems. Utility Model Content

[0004] The utility model aims to provide a cross-linked semiconductor electrical internal shielding plastic protective shell. The device is used to work, thereby solving the problems of poor electrical internal shielding effect and heavy shielding material of the existing semiconductor protective shell.

[0005] To achieve the above-mentioned purpose, the utility model provides the following technical solutions: a cross-linked semiconductor electrical internal shielding plastic protective shell, comprising a plastic protective shell, a shell cover is arranged above the plastic protective shell, and an inner partition component for electrical internal shielding is arranged inside the plastic protective shell;

[0006] The inner partition component includes an anti-corrosion layer fixedly connected to the outside of the plastic protective shell, a wear-resistant layer fixedly connected to one side of the anti-corrosion layer, a wear-resistant layer fixedly connected to one side of the wear-resistant layer, an electric shielding layer fixedly connected to one side of the wear-resistant layer, a buffer layer fixedly connected to one side of the electric shielding layer, and an antistatic layer fixedly connected to one side of the buffer layer.

[0007] Preferably, the electric shielding layer is a component composed of a polyethylene material and a graphene material mixed with epoxy resin as a cross-linking agent matrix.

[0008] Preferably, the antistatic layer is a component composed of a conductive polymer material copolymerized from carbon black filler and polystyrene.

[0009] Preferably, the anti-corrosion layer is a component composed of a polyurethane material.

[0010] Preferably, the wear-resistant layer is a component composed of a silicon oxide material.

[0011] Preferably, the electrical shielding layer is a component composed of polypropylene foam material.

[0012] Preferably, a heat insulating plate for absorbing heat is fixedly connected to the inner wall of the plastic protective shell, and a silica gel water absorption plate for absorbing water vapor is also fixedly connected to the inner wall of the plastic protective shell.

[0013] Compared with the prior art, the beneficial effects of the utility model are as follows:

[0014] The utility model proposes a cross-linked semiconductor electric inner shielding plastic protective shell. During use, since the electric shielding layer is a component composed of polyethylene material and graphene material mixed with epoxy resin as a cross-linking agent matrix, the performance of the shielding material can be improved by adding a cross-linking agent, such as enhancing the shielding effect, improving durability and anti-interference ability, etc., while reducing the amount of shielding material used, thereby reducing the weight and volume of the protective shell. Under the joint action of the anti-corrosion layer, the wear-resistant layer, the buffer layer and the antistatic layer, the semiconductor protected inside has corrosion resistance, high-strength protection, impact buffering and antistatic protection, and finally achieves the purpose of enhancing resistance to electromagnetic interference and reducing weight and volume. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a schematic diagram of the overall structure of the utility model;

[0016] Figure 2 This is a schematic diagram of the internal structure of the plastic protective shell of the utility model.

[0017] In the figure: 1. Plastic protective shell; 2. Shell cover; 3. Silicone water absorbent board; 4. Heat insulation board; 5. Inner partition assembly; 51. Anti-corrosion layer; 52. Wear-resistant layer; 53. Electric shielding layer; 54. Buffer layer; 55. Antistatic layer. DETAILED DESCRIPTION

[0018] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0019] In order to further understand the content of the utility model, the utility model is described in detail in conjunction with the accompanying drawings.

[0020] Combination Figure 1A cross-linked semiconductor electrical internal shielding plastic protective shell comprises a plastic protective shell 1, a shell cover 2 is arranged above the plastic protective shell 1, and an inner partition component 5 for electrical internal shielding is arranged inside the plastic protective shell 1.

[0021] The utility model is further described below in conjunction with embodiments.

[0022] Combination Figure 2 The inner partition component 5 includes an anti-corrosion layer 51 fixedly connected to the outside of the plastic protective shell 1, a wear-resistant layer 52 is fixedly connected to one side of the anti-corrosion layer 51, a wear-resistant layer 52 is fixedly connected to one side of the wear-resistant layer 52, an electric shielding layer 53 is fixedly connected to one side of the wear-resistant layer 52, a buffer layer 54 is fixedly connected to one side of the electric shielding layer 53, an anti-static layer 55 is fixedly connected to one side of the buffer layer 54, the electric shielding layer 53 is a component composed of a polyethylene material and a graphene material mixed with epoxy resin as a cross-linking agent matrix, the anti-static layer 55 is a component composed of a conductive polymer material copolymerized with carbon black filler and polystyrene, the anti-corrosion layer 51 is a component composed of a polyurethane material, the wear-resistant layer 52 is a component composed of a silicon oxide material, and the electric shielding layer 53 is a component composed of a polypropylene foam material. By adding the cross-linking agent to the electric shielding layer 53, the anti-electromagnetic interference capability is enhanced, while the volume and weight of the material are reduced, making it more lightweight; by providing the anti-corrosion layer 51, the outermost layer of the protective shell can be protected against corrosion; by providing the wear-resistant layer 52, the strength of the protective shell itself can be enhanced and not easily damaged; by providing the buffer layer 54, a buffering effect can be provided for the internal semiconductor when impacted; and by providing the antistatic layer 55, the effect of preventing static electricity accumulation and reducing static electricity discharge is achieved.

[0023] A heat insulating plate 4 for absorbing heat is fixedly connected to the inner wall of the plastic protective shell 1 , and a silica gel water absorbing plate 3 for absorbing water vapor is also fixedly connected to the inner wall of the plastic protective shell 1 .

[0024] Specifically, during use, since the electric shielding layer 53 is a component composed of polyethylene material and graphene material mixed with epoxy resin as a cross-linking agent matrix, the performance of the shielding material can be improved by adding a cross-linking agent, such as enhancing the shielding effect, improving durability and anti-interference ability, etc., while reducing the amount of shielding material used, thereby reducing the weight and volume of the protective shell. Under the joint action of the anti-corrosion layer 51, the wear-resistant layer 52, the buffer layer 54 and the antistatic layer 55, the semiconductor protected inside is protected by corrosion resistance, high-strength protection, impact buffering and antistatic protection, and finally achieves the purpose of enhancing anti-electromagnetic interference and reducing weight and volume.

[0025] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0026] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A cross-linked semiconductor electrical internal shielding plastic protective shell, comprising a plastic protective shell (1), a shell cover (2) disposed above the plastic protective shell (1), characterized in that: An inner barrier component (5) for electrical internal shielding is arranged inside the plastic protective shell (1); The inner barrier component (5) comprises an anti-corrosion layer (51) fixedly connected to the outside of the plastic protective shell (1), a wear-resistant layer (52) fixedly connected to one side of the anti-corrosion layer (51), a wear-resistant layer (52) fixedly connected to one side of the wear-resistant layer (52), an electric shielding layer (53) fixedly connected to one side of the wear-resistant layer (52), a buffer layer (54) fixedly connected to one side of the electric shielding layer (53), and an antistatic layer (55) fixedly connected to one side of the buffer layer (54).

2. A cross-linked semiconductor electrical internal shielding plastic protective shell according to claim 1, characterized in that: The electric shielding layer (53) is a component composed of polyethylene material and graphene material mixed with epoxy resin as a cross-linking agent matrix.

3. A cross-linked semiconductor electrical internal shielding plastic protective shell according to claim 1, characterized in that: The antistatic layer (55) is a component composed of a conductive polymer material copolymerized from carbon black filler and polystyrene.

4. A cross-linked semiconductor electrical internal shielding plastic protective shell according to claim 1, characterized in that: The anti-corrosion layer (51) is a component composed of polyurethane material.

5. A cross-linked semiconductor electrical internal shielding plastic protective shell according to claim 1, characterized in that: The wear-resistant layer (52) is a component composed of silicon oxide material.

6. A cross-linked semiconductor electrical internal shielding plastic protective shell according to claim 1, characterized in that: The electric shielding layer (53) is a component composed of polypropylene foam material.

7. A cross-linked semiconductor electrical internal shielding plastic protective shell according to claim 1, characterized in that: The inner wall of the plastic protective shell (1) is fixedly connected to a heat insulating plate (4) for absorbing heat, and the inner wall of the plastic protective shell (1) is also fixedly connected to a silica gel water absorption plate (3) for absorbing water vapor.

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