Etching system for coating equipment

Abstract

The embodiment of the utility model relates to the field of coating technologies, and provides an etching system for coating equipment, the etching system for the coating equipment comprises a first gas path, an ionization device and a second gas path, the first gas path is communicated with the inlet end of the ionization device, the first gas path is used for conveying gas to be ionized to the ionization device, and the second gas path is used for conveying gas to be ionized to the ionization device; one end of the second gas path is communicated with the outlet end of the ionization device, and the other end of the second gas path is communicated with a reaction chamber of the coating equipment. The spraying plate cleaning device has the advantages of being short in time consumption for cleaning the spraying plate, relatively low in cleaning cost and relatively low in working intensity of maintenance personnel.

Description

Technical Field

[0001] The present application relates to the field of film coating technology, and in particular to an etching system for film coating equipment. Background Art

[0002] The coating equipment, such as ALD coating equipment, adopts atomic deposition technology (ALD), which is a special chemical vapor deposition thin film technology. The principle is to alternately pass gas phase precursor pulses into the reaction chamber to chemically adsorb and react on the deposition substrate to form a deposited film.

[0003] In the related art, after the coating equipment has been working for a period of time, the aluminum oxide scab produced on its spray plate will affect the air intake effect, so the spray plate needs to be maintained regularly. The traditional maintenance method is: shut down the coating equipment, take out the spray plate for cleaning after the reaction chamber cools down.

[0004] However, the inventors realize that in actual use, the entire process of cleaning the spray plate is not only time-consuming, but also sometimes requires the replacement of some wearing parts, such as sealing rings or fixing screws, etc., and the cleaning cost and the workload of maintenance personnel are relatively high. Utility Model Content

[0005] One or more embodiments of the present application provide an etching system for coating equipment to solve or at least partially alleviate the problems in the related art of long time consumption for cleaning the spray plate, high cleaning costs, and relatively high workload for maintenance personnel.

[0006] One or more embodiments of the present application provide an etching system for a coating device, which adopts the following technical solution:

[0007] An etching system for a coating device comprises a first gas path, an ionization device and a second gas path, wherein the first gas path is connected to the inlet end of the ionization device, and the first gas path is used to transport the gas to be ionized to the ionization device, one end of the second gas path is connected to the outlet end of the ionization device, and the other end of the second gas path is used to be connected to the reaction chamber of the coating device.

[0008] In some embodiments, the etching system for the coating equipment also includes a first switching valve, the other end of the second gas path is also used to connect with the first precursor gas path of the coating equipment, and the first switching valve is located in the second gas path between the ionization device and the first precursor gas path.

[0009] In some embodiments, the etching system for the coating equipment also includes a third gas circuit and a second switching valve, one end of the third gas circuit is connected to the second gas circuit between the first switching valve and the first precursor gas circuit, the other end of the third gas circuit is used to connect to the second precursor gas circuit of the coating equipment, and the second switching valve is located in the third gas circuit.

[0010] In some embodiments, the etching system for coating equipment also includes a first pressure reducing valve and a pressure detection device, wherein the first pressure reducing valve and the pressure detection device are both arranged on the first gas path, and the pressure detection device is located between the first pressure reducing valve and the ionization device.

[0011] In some embodiments, the etching system for a film coating device further includes a first one-way valve, and the first one-way valve is located in the first gas path.

[0012] In some embodiments, the etching system for film coating equipment further includes a mass flow meter, and the mass flow meter is located between the pressure detection device and the first one-way valve.

[0013] In some embodiments, the etching system for coating equipment further includes a third switch valve, and the third switch valve is located between the mass flow meter and the pressure detection device and / or between the mass flow meter and the first one-way valve.

[0014] In some embodiments, the etching system for the coating equipment also includes a fourth gas circuit and a fourth switch valve, one end of the fourth gas circuit is connected to the first gas circuit, and the other end of the fourth gas circuit is used to connect to the purge gas circuit of the coating equipment, and the fourth switch valve is located in the fourth gas circuit.

[0015] In some embodiments, the etching system for film coating equipment further includes an ion detection device, and an inlet end of the ion detection device is used to communicate with an outlet end of the reaction chamber.

[0016] In some embodiments, the ionization device is a remote plasma source.

[0017] Compared with the related art, one or more embodiments of the present application have beneficial technical effects:

[0018] When the coating equipment needs to clean the aluminum oxide scab on the spray plate, the first gas path of the etching system transports the gas to be ionized, such as nitrogen trifluoride gas, to the ionization device, and the ionization device can ionize the nitrogen trifluoride gas into fluoride ions. Since one end of the second gas path of the etching system is connected to the outlet end of the ionization device, and the other end of the second gas path is used to communicate with the reaction chamber of the coating equipment, the fluoride ions can flow to the reaction chamber of the coating equipment, and react with the aluminum oxide scab on the spray plate to generate solid aluminum fluoride. After the coating equipment transports TMA (trimethylaluminum) to the reaction chamber, the solid aluminum fluoride can react with TMA to produce dimer molecules with relatively low vapor pressure, and the dimer molecules can be converted into dust particles at a temperature above 100 degrees Celsius, thereby separating from the spray plate. That is to say, compared with the existing method of disassembling the spray plate for cleaning, when the coating equipment is provided with an etching system, the spray plate can be cleaned without disassembling it, thereby effectively reducing the cleaning time, cleaning cost and workload of maintenance personnel. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings of the embodiments will be briefly introduced below. Obviously, the drawings in the following description only relate to some embodiments of the present application, rather than limiting the present application.

[0020] Figure 1 It is a schematic diagram of the gas path of the coating equipment in the related technology.

[0021] Figure 2 It is a schematic diagram of the use of the etching system according to some embodiments of the present application.

[0022] Figure 3 Schematic diagram of the gas path at the inlet end of the reaction chamber according to some embodiments of the present application.

[0023] Figure 4 Schematic diagram of the gas path at the outlet of the reaction chamber according to some embodiments of the present application.

[0024] In the figure: 1. special gas cabinet; 2. first gas circuit; 3. ionization device; 4. second gas circuit; 5. third gas circuit; 6. first switch valve; 7. second switch valve; 8. first pressure reducing valve; 9. pressure detection device; 10. first non-return valve; 11. mass flow meter; 12. third switch valve; 13. fourth gas circuit; 14. fourth switch valve; 15. second pressure reducing valve; 16. second non-return valve; 17. first precursor gas circuit; 18. second precursor gas circuit; 19. purge gas circuit; 20. reaction chamber; 21. ion detection device; 22. fifth gas circuit; 23. third pressure reducing valve; 24. vacuum pump; 25. tail gas treatment chamber; 91. pressure gauge; 92. pressure gauge. DETAILED DESCRIPTION

[0025] In order to make the purpose, technical solutions and advantages of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings showing multiple embodiments of the present application. It should be understood that the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments described in the present application, all other embodiments obtained by ordinary technicians in this field without spending creative work will fall within the scope of protection of the present application.

[0026] Unless otherwise defined, all technical and scientific terms used in this application have the same meaning as those generally understood by technicians in the technical field of this application; the terms used in the specification of the application are only for the purpose of describing specific implementation methods, and are not intended to limit this application; the terms "including", "comprising", "having", "having", "containing", "including", etc. in the specification and claims of this application and the above-mentioned figure description are open-ended words. Therefore, "including", "comprising", "having" is a method or device with one or more steps or elements, for example, which has one or more steps or elements, but is not limited to having only these one or more elements. The terms "first", "second", etc. in the specification and claims of this application or the above-mentioned figures are used to distinguish different objects, rather than to describe a specific order or a primary and secondary relationship. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise specified, the meaning of "multiple" is two or more.

[0027] Reference to "embodiment" in this application means that a particular feature, structure, or characteristic described in conjunction with the embodiment may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described in this application may be combined with other embodiments.

[0028] As above, it should be emphasized that when the term "includes / comprising" is used in this specification, it is used to clearly indicate the presence of a feature, integer, step or component, but does not exclude the presence or addition of one or more other features, integers, steps, components or groups of features, integers, steps, components. As used in this application, the singular forms "a", "an" and "the" also include plural forms, unless the context clearly indicates otherwise.

[0029] The words "a" and "an" in this specification may mean one, but may also be consistent with the meaning of "at least one" or "one or more". The term "about" generally means plus or minus 10% of the mentioned value, or more specifically plus or minus 5%. The term "or" used in the claims means "and / or" unless it is clearly stated that it refers to only alternative solutions.

[0030] The term "and / or" in this application is only a description of the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this application generally indicates that the associated objects before and after are in an "or" relationship.

[0031] Figure 1 It is a schematic diagram of the gas path of the coating equipment in the related technology.

[0032] In the prior art, reference Figure 1 The coating equipment includes a special gas cabinet 1, a first precursor gas line 17, a second precursor gas line 18, a purge gas line 19, a reaction chamber 20, a vacuum pump 24 and an exhaust gas treatment chamber 25. The special gas cabinet 1 stores water vapor, TMA (trimethylaluminum) and nitrogen. The two ends of the first precursor gas line 17 are respectively connected to the special gas cabinet 1 and one air inlet of the spray plate in the reaction chamber 20. The first precursor gas line 17 transports water vapor to one air inlet of the spray plate as a gas phase precursor; the two ends of the second precursor gas line 18 are respectively connected to the special gas cabinet 1 and another air inlet of the spray plate in the reaction chamber 20. The second precursor gas line 18 transports TMA (trimethylaluminum) to the other air inlet of the spray plate. As a gas-phase precursor; one end of the purge gas path 19 is connected to the special gas cabinet 1, and the other end is divided into two paths, one end is connected to the first precursor gas path 17, and the other end is connected to the second precursor gas path 18. Before or after coating, the coating equipment can introduce nitrogen into the purge gas path 19 to achieve the purge of the first precursor gas path 17 and the second precursor gas path 18; when the coating equipment is coating, after adjusting the reaction chamber 20 to a suitable temperature, the first precursor gas path 17 and the second precursor gas path 18 respectively pass the gas-phase precursor into the reaction chamber 20, so as to chemically adsorb and react on the deposition substrate to form a deposited film, but in the long run, aluminum oxide scab will form on the surface of the spray plate and the gas outlet to affect the gas outlet effect.

[0033] Figure 2 It is a schematic diagram of the use of the etching system according to some embodiments of the present application.

[0034] One or more embodiments of the present application disclose an etching system for a coating device, referring to Figure 2The etching system for the coating equipment includes a first gas circuit 2, an ionization device 3 and a second gas circuit 4. The first gas circuit 2 is connected to the inlet end of the ionization device 3, and the first gas circuit 2 is used to transport the gas to be ionized to the ionization device 3. One end of the second gas circuit 4 is connected to the outlet end of the ionization device 3, and the other end of the second gas circuit 4 is used to communicate with the reaction chamber 20 of the coating equipment.

[0035] In this embodiment, the etching system for the coating equipment can be used for ALD coating equipment, PVD coating equipment and CVD coating equipment. For new coating equipment, it can be directly configured during production, and for coating equipment that has been put into use, it can be modified by adding installation.

[0036] In this embodiment, the special gas cabinet 1 of the coating equipment can be equipped with a gas storage chamber for storing the gas to be ionized. In this way, the first gas circuit 2 is connected to the special gas cabinet 1, which is convenient for centralized management of the reaction medium of the coating equipment. At the same time, a separate gas storage device can also be set up to communicate with the first gas circuit 2 to provide the gas to be ionized.

[0037] It should be noted that when the object to be etched is aluminum or aluminum oxide, the gas to be ionized includes but is not limited to nitrogen trifluoride gas, carbon tetrafluoride, etc., which is mainly used to ionize fluorine ions.

[0038] When the coating equipment needs to clean the aluminum oxide scab on the spray plate, the first gas path 2 of the etching system conveys the gas to be ionized, such as nitrogen trifluoride gas, to the ionization device 3, and the ionization device 3 can ionize the nitrogen trifluoride gas into fluoride ions. Since one end of the second gas path 4 of the etching system is connected to the outlet end of the ionization device 3, and the other end of the second gas path 4 is used to communicate with the reaction chamber 20 of the coating equipment, the fluoride ions can flow to the reaction chamber 20 of the coating equipment, and react with the aluminum oxide scab on the spray plate to generate solid aluminum fluoride. After the coating equipment conveys TMA (trimethylaluminum) to the reaction chamber 20, the solid aluminum fluoride can react with TMA to produce dimer molecules with relatively low vapor pressure, and the dimer molecules can be converted into dust particles at a temperature above 100 degrees Celsius, thereby separating from the spray plate. That is to say, compared with the existing method of disassembling the spray plate for cleaning, when the coating equipment is provided with an etching system, the spray plate can be cleaned without disassembling, thereby effectively reducing the cleaning time, cleaning cost and work intensity of maintenance personnel.

[0039] Figure 3 Schematic diagram of the gas path at the inlet end of the reaction chamber according to some embodiments of the present application.

[0040] In some embodiments, reference Figure 3 The etching system for the coating equipment also includes a first switch valve 6. The other end of the second gas path 4 is also used to communicate with the first precursor gas path 17 of the coating equipment. The first switch valve 6 is located in the second gas path 4 between the ionization device 3 and the first precursor gas path 17.

[0041] In at least one embodiment, the other end of the second gas path 4 is also connected to the first precursor gas path 17 of the coating equipment, and is jointly connected to an air inlet of the shower plate in the reaction chamber 20, so as to achieve communication with the reaction chamber 20 through the gas path in the shower plate, and the first switch valve 6 is located in the second gas path 4 between the ionization device 3 and the first precursor gas path 17. In this way, the second gas path 4 and the first precursor gas path 17 share an air inlet of the shower plate in the reaction chamber 20, so that no additional opening is required on the reaction chamber 20, which reduces damage to the reaction chamber 20, and the first switch valve 6 can be used to achieve conduction and cutoff of the second gas path 4 between the ionization device 3 and the first precursor gas path 17, thereby preventing the precursor gas introduced into the first precursor gas path 17 from flowing into the interior of the ionization device 3 when in use, thereby contaminating the ionization device 3.

[0042] At the same time, when the coating equipment cleans the spray plate, since the first precursor gas path 17 and the second gas path 4 are connected to one air inlet of the spray plate, and the second precursor gas path 18 is connected to another air inlet of the spray plate, by cutting off the first precursor gas path 17 and the second precursor gas path 18 through their respective switch valves, and adjusting the first switch valve 6 and the second switch valve 7 to the on state, the gas ionized by the ionization device 3 will flow to the two air inlets of the spray plate respectively, and enter the reaction chamber 20 through the air outlet of the spray plate. In the process of introducing the gas to be ionized, the gas to be ionized will chemically react with the object to be etched in the gas path of the spray plate, and will become dust particles after the reaction gas is introduced into the second precursor gas path 18, thereby finally ensuring that the gas path of the spray plate is unobstructed to achieve normal spraying.

[0043] Specifically, the first switch valve 6 is a pneumatic diaphragm valve or a solenoid valve, etc. There is no limitation here, and it depends on actual needs.

[0044] In some embodiments, reference Figure 3 The etching system for the coating equipment also includes a third gas circuit 5 and a second switch valve 7. One end of the third gas circuit 5 is used to connect with the second gas circuit 4 between the first switch valve 6 and the first precursor gas circuit 17. The other end of the third gas circuit 5 is used to connect with the second precursor gas circuit 18 of the coating equipment. The second switch valve 7 is located in the third gas circuit 5.

[0045] In at least one embodiment, one end of the third gas circuit 5 is connected to and detachably connected with the second gas circuit 4 between the first switch valve 6 and the first precursor gas circuit 17, and the other end of the third gas circuit 5 is used to be connected to and detachably connected with the second precursor gas circuit 18 of the coating device. In this way, when the coating device is working normally, the first switch valve 6 and the second switch valve 7 are adjusted to the cut-off state, and the first precursor gas circuit 17 and the second precursor gas circuit 18 of the coating device are not connected to each other before entering the reaction chamber 20, and the reaction medium in the two will not enter the ionization device 3, thereby contaminating the ionization device 3.

[0046] Specifically, the second switch valve 7 is a pneumatic diaphragm valve or a solenoid valve, etc. There is no limitation here, and it depends on actual needs.

[0047] In some embodiments, reference Figure 3 The etching system for the coating equipment also includes a first pressure reducing valve 8 and a pressure detection device 9. The first pressure reducing valve 8 and the pressure detection device 9 are both arranged on the first gas path 2. The pressure detection device 9 is located between the first pressure reducing valve 8 and the ionization device 3.

[0048] In at least one embodiment, the first pressure reducing valve 8 and the pressure detection device 9 are sequentially arranged along the direction from one end of the first gas path 2 away from the ionization device 3 to the other end connected to the ionization device 3, that is, the first pressure reducing valve 8 is located in the upstream gas path of the pressure detection device 9. In this way, the pressure of the gas to be ionized can be reduced after passing through the first pressure reducing valve 8, and the pressure is detected by the pressure detection device 9, which helps to ensure that the ionization device 3 can work normally within an appropriate pressure range, thereby improving the stability and performance of the device.

[0049] Specifically, the first pressure reducing valve 8 is a fixed value pressure reducing valve or a proportional pressure reducing valve, which is not limited here and is determined according to actual needs.

[0050] In some embodiments, reference Figure 3 The pressure detection device 9 includes a pressure gauge 91 and / or a pressure gauge 92 , and the pressure gauge 91 and / or the pressure gauge 92 is located between the first pressure reducing valve 8 and the ionization device 3 .

[0051] In at least one embodiment, the pressure detection device 9 includes a pressure gauge 91 and a pressure gauge 92. The pressure gauge 91 and the pressure gauge 92 are arranged in sequence along the direction from one end of the first gas path 2 away from the ionization device 3 to the other end connected to the ionization device 3. That is, when the gas to be ionized flows in the first gas path 2, it passes through the pressure gauge 91 and the pressure gauge 92 in sequence. Therefore, the pressure gauge 91 is used to provide a direct pressure reading, and the pressure gauge 92 is used to monitor pressure changes, thereby providing necessary data support for the safe operation and effective control of the system.

[0052] In some embodiments, reference Figure 3The etching system for the coating device also includes a first one-way valve 10 , which is located in the first gas path 2 .

[0053] In at least one embodiment, the first one-way valve 10 is located between the pressure gauge 92 of the pressure detection device 9 and the ionization device 3, the inlet of the first one-way valve 10 is connected to the pressure gauge 92, and the outlet of the first one-way valve 10 is connected to the inlet end of the ionization device 3. In this way, when the gas to be ionized flows in the first gas path 2, the first one-way valve 10 can effectively limit the backflow of the gas to be ionized to cause abnormal pressure detection.

[0054] In some embodiments, reference Figure 3 The etching system for the coating equipment also includes a mass flow meter 11, which is located between the pressure detection device 9 and the first one-way valve 10.

[0055] In at least one embodiment, the inlet end of the mass flow meter 11 is connected to the pressure gauge 92 of the pressure detection device 9, and the outlet end of the mass flow meter 11 is connected to the first one-way valve 10. In this way, when the gas to be ionized flows in the first gas path 2, the mass flow rate of the gas to be ionized can be obtained through the mass flow meter 11, thereby providing necessary data support for the safe operation and effective control of the system.

[0056] In some embodiments, reference Figure 3 The etching system for the coating equipment also includes a third switch valve 12, which is located between the mass flow meter 11 and the pressure detection device 9 and / or between the mass flow meter 11 and the first one-way valve 10.

[0057] In at least one embodiment, the gas path upstream and downstream of the mass flow meter 11 are both connected to the third switch valve 12. In this way, by adjusting the third switch valve 12 upstream and downstream of the mass flow meter 11, the flow and pressure passing through the mass flow meter 11 can be adjusted.

[0058] Specifically, the third switch valve 12 is a pneumatic diaphragm valve or a solenoid valve, etc. There is no limitation here, and it depends on actual needs.

[0059] In some embodiments, reference Figure 3 The etching system for the coating equipment also includes a fourth gas path 13 and a fourth switch valve 14. One end of the fourth gas path 13 is connected to the first gas path 2, and the other end of the fourth gas path 13 is used to connect to the purge gas path 19 of the coating equipment. The fourth switch valve 14 is located in the fourth gas path 13.

[0060] In at least one embodiment, the fourth gas path 13 is a reserved gas path, which is purged when a component in the etching system is damaged and needs to be replaced. A fourth switch valve 14 is provided on the fourth gas path 13, one end of the fourth gas path 13 is connected to the first gas path 2 between the special gas cabinet 1 and the first pressure reducing valve 8, and the other end of the fourth gas path 13 is used to communicate with the purge gas path 19 of the coating equipment. In this way, the fourth switch valve 14 can be controlled to realize the conduction and cutoff of the fourth gas path 13.

[0061] Specifically, the fourth switch valve 14 is a pneumatic diaphragm valve or a solenoid valve, etc. There is no limitation here, and it depends on actual needs.

[0062] Further, refer to Figure 3 The etching system for the coating equipment further includes a second pressure reducing valve 15 and a second one-way valve 16. The second pressure reducing valve 15, the fourth switch valve 14 and the second one-way valve 16 are sequentially connected to the fourth gas path 13. In this way, when the purge gas path 19 of the coating equipment is connected to an inert gas such as nitrogen, the nitrogen can enter the fourth gas path 13, and flow to the first gas path 2 after being reduced in pressure by the second pressure reducing valve 15, and the second one-way valve 16 can limit the gas reflux, thereby ensuring the stable operation of the system.

[0063] Specifically, the second pressure reducing valve 15 is a fixed value pressure reducing valve or a proportional pressure reducing valve, which is not limited here and is determined according to actual needs.

[0064] Figure 4 Schematic diagram of the gas path at the outlet of the reaction chamber according to some embodiments of the present application.

[0065] In some embodiments, the etching system for coating equipment further includes an ion detection device 21, referring to Figure 4 The inlet end of the ion detection device 21 is used to communicate with the outlet end of the reaction chamber 20.

[0066] In at least one embodiment, the gas outlet of the reaction chamber 20 is connected to the vacuum pump 24, and the vacuum pump 24 can extract the gas from the reaction chamber 20. The inlet end of the ion detection device 21 is connected to the gas path between the reaction chamber 20 and the vacuum pump 24 through the fifth gas path 22. In this way, when the gas in the reaction chamber 20 is extracted by the vacuum pump 24, part of the gas will flow to the ion detection device 21 through the fifth gas path 22 to detect the content of fluorine ions in the gas, and then determine whether the shower plate has been cleaned.

[0067] In this embodiment, when the gas to be ionized can ionize fluoride ions, the ion detection device 21 is a fluoride ion detector for detecting the content of fluoride ions. At the same time, in order to ensure reliable cleaning of the shower plate, the gas to be ionized and TMA (trimethylaluminum) need to be alternately introduced into the reaction chamber 20 to clean the aluminum oxide scab of the shower plate.

[0068] Furthermore, the coating device further includes a third pressure reducing valve 23, which is disposed on the fifth gas path 22. Thus, when the gas in the reaction chamber 20 is extracted by the vacuum pump 24, part of the gas will enter the fifth gas path 22, and enter the ion detection device 21 after being decompressed by the third pressure reducing valve 23, which helps to ensure that the ion detection device 21 can work normally within an appropriate pressure range.

[0069] Specifically, the third pressure reducing valve 23 is a fixed value pressure reducing valve or a proportional pressure reducing valve, which is not limited here and is determined according to actual needs.

[0070] In some embodiments, reference Figure 3 , the ionization device 3 is a remote plasma source.

[0071] Thus, when the gas to be ionized, such as nitrogen trifluoride gas, enters the remote plasma source, fluorine ions are ionized in the ionization chamber inside the remote plasma source so as to subsequently enter the reaction chamber 20 for reaction.

[0072] The above describes the basic principles, main features and advantages of the present application. Those skilled in the art should understand that the present application is not limited by the above embodiments, and the above embodiments and the specification only describe the principles of the present application. The present application may have various changes and improvements without departing from the spirit and scope of the present application, and these changes and improvements fall within the scope of the present application for which protection is sought. The scope of protection claimed by the present application is defined by the attached claims and their equivalents.

Claims

1. An etching system for a coating device, characterized in that: It includes a first gas circuit, an ionization device and a second gas circuit, wherein the first gas circuit is connected to the inlet end of the ionization device, the first gas circuit is used to transport the gas to be ionized to the ionization device, one end of the second gas circuit is connected to the outlet end of the ionization device, and the other end of the second gas circuit is used to connect to the reaction chamber of the coating equipment.

2. The etching system for coating equipment according to claim 1, characterized in that: It also includes a first switch valve, and the other end of the second gas path is also used to communicate with the first precursor gas path of the coating equipment, and the first switch valve is located in the second gas path between the ionization device and the first precursor gas path.

3. The etching system for coating equipment according to claim 2, characterized in that: It also includes a third gas circuit and a second switch valve, one end of the third gas circuit is connected to the second gas circuit between the first switch valve and the first precursor gas circuit, the other end of the third gas circuit is used to connect to the second precursor gas circuit of the coating equipment, and the second switch valve is located in the third gas circuit.

4. The etching system for coating equipment according to claim 1, characterized in that: It also includes a first pressure reducing valve and a pressure detection device, wherein the first pressure reducing valve and the pressure detection device are both arranged on the first gas path, and the pressure detection device is located between the first pressure reducing valve and the ionization device.

5. The etching system for coating equipment according to claim 4, characterized in that: It also includes a first one-way valve, which is located in the first gas path.

6. The etching system for coating equipment according to claim 5, characterized in that: It also includes a mass flow meter, which is located between the pressure detection device and the first one-way valve.

7. The etching system for coating equipment according to claim 6, characterized in that: It also includes a third switch valve, which is located between the mass flow meter and the pressure detection device and / or between the mass flow meter and the first one-way valve.

8. The etching system for coating equipment according to claim 1, characterized in that: It also includes a fourth gas path and a fourth switch valve. One end of the fourth gas path is connected to the first gas path, and the other end of the fourth gas path is used to communicate with the purge gas path of the coating equipment. The fourth switch valve is located in the fourth gas path.

9. The etching system for coating equipment according to claim 1, characterized in that: It also includes an ion detection device, wherein the inlet end of the ion detection device is used to communicate with the outlet end of the reaction chamber.

10. The etching system for coating equipment according to claim 1, characterized in that: The ionization device is a remote plasma source.

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