Power device

Abstract

The utility model discloses a power device, and relates to the technical field of electronic components. The power device includes: a lower electrode; the insulating support body is arranged above the lower electrode, a cavity for accommodating a nano magnetic conductive material is arranged in the insulating support body, a conductive part is arranged on the side wall of the cavity, and the conductive part is electrically connected with the lower electrode; the upper electrode is arranged above the insulating supporting body, a gap exists between the upper electrode and the conductive part, and the height of the nano magnetic conductive material is larger than that of the gap and smaller than that of the cavity; the insulating layer is arranged above the upper electrode; and the control electrode is arranged above the insulating layer, and the switching power device is manufactured by replacing a semiconductor material with a nano magnetic conductive material, so that the problems of high-temperature electric leakage, large on-resistance, poor reliability and the like caused by the traditional semiconductor material can be effectively solved.

Description

Technical Field

[0001] The utility model relates to the technical field of electronic components, in particular to a power device. Background Art

[0002] Power devices are a type of semiconductor devices used to process and control the conversion and transmission of electrical energy. These devices are particularly suitable for high voltage, high current and high power applications. Power devices have two main functions: one is the switching function, which can perform fast switching operations in the circuit to achieve control of current or voltage; the other is the amplification function, which can amplify a small current signal into a large current signal, or amplify a small voltage test signal into a large voltage test signal; the main types of power devices include rectifiers, thyristors, power MOSFETs, insulated gate bipolar transistors (IGBTs), power operational amplifiers, etc. They play an important role in many application fields such as power systems, motors, power converters, electric vehicles, etc.

[0003] In the application field of power devices, switch application is undoubtedly the most important link. Traditional switch devices are based on the structure of three electrodes: source, drain and gate. The current flow between the source and drain is controlled by the gate. Current power devices are usually made of semiconductor materials, such as silicon materials. The flow of current is achieved by the transmission of electrons and holes in the semiconductor materials. Some key parameters of these devices, such as breakdown voltage, on-resistance and switching speed, are often contradictory due to the physical mechanism of semiconductor materials. Increasing the breakdown voltage of the device usually requires increasing the on-resistance of the device, so it is difficult for a device to meet the requirements of high breakdown voltage and low on-resistance at the same time. Similarly, when the switching speed is increased, the breakdown voltage of the device is low and the on-resistance is high. Therefore, in traditional semiconductor devices, it is impossible to achieve the optimal breakdown voltage, on-resistance and switching speed at the same time; in addition, semiconductor devices are accompanied by a certain leakage current when reverse cutoff, and there will also be leakage current under high temperature conditions. Moreover, when encountering current and voltage shocks, such power devices are also prone to failure, which is a major defect for harsh operating environments and high-intensity work requirements. Utility Model Content

[0004] The purpose of the utility model is to provide a power device to solve the problems raised in the above-mentioned background technology: some key parameters of the power device, such as breakdown voltage, on-resistance and switching speed, are often contradictory due to the physical mechanism of semiconductor materials. In addition, the semiconductor device has a certain leakage current during reverse cutoff, and leakage current may also occur under high temperature conditions. Moreover, when encountering current and voltage shocks, this type of power device is also prone to failure, which is a major defect for harsh operating environments and high-intensity work requirements.

[0005] To achieve the above object, according to one aspect of the present disclosure, a power device is provided, characterized in that it includes:

[0006] Lower electrode;

[0007] Insulating supports, wherein a plurality of insulating supports are arranged above the lower electrode at intervals, a cavity is formed between adjacent insulating supports, the cavity is filled with nano-magnetic conductive material, a side wall of the cavity is provided with a conductive portion, and the conductive portion is electrically connected to the lower electrode;

[0008] An upper electrode, wherein the upper electrode is disposed above the insulating support, a gap exists between the upper electrode and the conductive portion, and a height of the nano-magnetic conductive material is greater than a height of the gap and less than a height of the cavity;

[0009] an insulating layer, the insulating layer being disposed above the upper electrode;

[0010] A control electrode, wherein the control electrode is arranged above the insulating layer, and the control electrode is used to apply a magnetic attraction force or a magnetic repulsion force to the nanomagnetic conductive material. When the control electrode applies a magnetic attraction force to the nanomagnetic conductive material, the nanomagnetic conductive material moves toward the upper electrode, electrically connecting the upper electrode and the conductive part. When the control electrode applies a magnetic repulsion force to the nanomagnetic conductive material, the nanomagnetic conductive material moves toward the lower electrode, and the electrical connection between the conductive part and the upper electrode is disconnected.

[0011] In a possible implementation manner, the power device further includes:

[0012] The lower electrode is arranged on the substrate.

[0013] In a possible implementation manner, the height of the conductive portion is greater than half of the height of the cavity, and the height of the nano-magnetic conductive material is less than or equal to half of the height of the cavity.

[0014] In a possible implementation, a metal layer is provided on the surface of the nano-magnetic conductive material.

[0015] In a possible implementation, the control electrode and the insulating layer are provided with a gap portion connected to the upper electrode.

[0016] In a possible implementation, the cavity is disposed below the air-avoiding portion.

[0017] The above one or more technical solutions in the embodiments of the present application have at least one or more of the following technical effects:

[0018] In a power device provided in an embodiment of the utility model, a voltage that attracts nanomagnetic conductive materials is added to the control pole, and the nanomagnetic conductive materials are attracted to the upper electrode at this time, so that the upper electrode and the conductive part are connected by the nanomagnetic conductive materials, and the power device is turned on; a voltage that repels the nanomagnetic conductive materials is added to the control pole, and the nanomagnetic conductive materials are repelled to the lower electrode at this time, so that the upper electrode and the conductive part are disconnected and the power device is turned off, thereby realizing the switching function of the power device. By using the nanomagnetic conductive materials as conductive media, the switch of the device is controlled by attraction and repulsion. The magnetic materials at the nanoscale allow the device to have a higher breakdown voltage. At the same time, since the material can respond quickly to changes in the electric field, the switching speed can also be improved. At the same time, since the nanomagnetic conductive materials have a strong resistance to current and voltage shocks, this also greatly improves the stability and reliability of the components. Therefore, by using nanomagnetic conductive materials to replace semiconductor materials to manufacture switch power devices, the problems of high temperature leakage, large on-resistance, poor reliability, etc. brought by traditional semiconductor materials can be effectively solved.

[0019] The above description is only an overview of the technical solution of the utility model. In order to more clearly understand the technical means of the utility model, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the utility model more obvious and easy to understand, the specific implementation methods of the utility model are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 A schematic diagram of a power device structure provided in an embodiment of the present application;

[0021] Figure 2 A flowchart of the manufacturing state of a power device provided in an embodiment of the present application;

[0022] Figure 3 A flowchart of the manufacturing state of a power device provided in an embodiment of the present application;

[0023] Figure 4 A flow chart of a method for manufacturing a power device provided in an embodiment of the present application;

[0024] Figure 5 A flow chart of a method for manufacturing a power device provided in an embodiment of the present application;

[0025] Figure 6 A schematic diagram of a power device structure provided in an embodiment of the present application.

[0026] Explanation of the reference numerals: 10, substrate; 20, lower electrode; 30, insulating support body; 31, cavity; 32, conductive part; 33, nanomagnetic conductive material; 34, insulating support layer; 40, upper electrode; 41, gap; 50, insulating layer; 60, control electrode; 70, insulating base; 71, air-proof part. DETAILED DESCRIPTION

[0027] In order to make the objectives, technical solutions and advantages of the present disclosure more clear, the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.

[0028] Exemplary embodiments will be described in detail herein, examples of which are shown in the accompanying drawings. When the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The implementations described in the following exemplary embodiments do not represent all implementations consistent with the present disclosure. Instead, they are merely examples of structures and methods consistent with some aspects of the present disclosure as detailed in the appended claims.

[0029] Figure 1 FIG. 1 is a schematic diagram of a power device structure according to an exemplary embodiment. Figure 1 As shown, the power device includes:

[0030] A lower electrode 20, the lower electrode 20 plays a role of conducting electricity;

[0031] Insulating support 30, several insulating support 30 are arranged above the lower electrode 20 at intervals, and a cavity 31 is formed between adjacent insulating support 30, and the cavity 31 is filled with nano-magnetic conductive material 33, and the side wall of the cavity 31 is provided with a conductive part 32, and the conductive part 32 is electrically connected to the lower electrode 20. It can be understood that the nano-magnetic conductive material 33 refers to a material with magnetism and conductivity at the nanoscale (1-100 nanometers). This material is usually composed of magnetic metals or magnetic semiconductors, such as iron, nickel, cobalt and their alloys, or magnetic oxides such as iron oxide, etc. The nano-magnetic conductive material 33 arranged in the cavity 31 is used as a conductive medium to achieve the switching between the power-off and power-on states;

[0032] The upper electrode 40 is disposed above the insulating support 30. There is a gap 41 between the upper electrode 40 and the conductive portion 32. The height of the nanomagnetic conductive material 33 is greater than the height of the gap 41 and less than the height of the cavity 31. The upper electrode 40 plays a conductive role. There is a gap 41 between the upper electrode 40 and the conductive portion 32. When the nanomagnetic conductive material 33 contacts the upper electrode 40, the nanomagnetic conductive material 33 fills the gap 41, so that the upper electrode 40 and the conductive portion 32 are conductive.

[0033] An insulating layer 50, wherein the insulating layer 50 is disposed above the upper electrode 40;

[0034] The control electrode 60 is arranged above the insulating layer 50. The control electrode 60 is used to apply magnetic attraction or magnetic repulsion to the nanomagnetic conductive material 33. When the control electrode 60 applies magnetic attraction to the nanomagnetic conductive material 33, the nanomagnetic conductive material 33 moves toward the upper electrode 40, and the upper electrode 40 and the conductive part 32 are electrically connected. When the control electrode 60 applies magnetic repulsion to the nanomagnetic conductive material 33, the nanomagnetic conductive material 33 moves to the lower electrode 20, and the electrical connection between the conductive part 32 and the upper electrode 40 is disconnected.

[0035] More specifically, the control electrode 60 is used as the control electrode of the power device. Under normal circumstances, the nano-magnetic conductive material 33 will change its magnetization state under the action of voltage. When a voltage that attracts the nano-magnetic conductive material 33 is applied to the control electrode 60, the nano-magnetic conductive material 33 will be attracted to the upper electrode 40 and contact the upper electrode 40 due to the action of the electric field. Figure 6 At this time, the nano-magnetic conductive material 33 fills the gap 41, so that the upper electrode 40 is connected to the conductive part 32, forming a conductive state, that is, the power device is turned on. When a voltage that repels the nano-magnetic conductive material 33 is applied to the control electrode 60, the nano-magnetic conductive material 33 will be pushed toward the lower electrode 20 by the electric field. Figure 1 At this time, the nano-magnetic conductive material 33 cannot fill the gap 41, so that the upper electrode 40 is disconnected from the conductive part 32, forming a non-conductive state, that is, the power device is turned off. Therefore, by changing the voltage of the control electrode 60, the state of the nano-magnetic conductive material 33 can be controlled, thereby realizing the on and off control of the power device.

[0036] The embodiment of the present application provides a technical solution for a power device, by adding a voltage to attract the nanomagnetic conductive material 33 to the control pole 60, the nanomagnetic conductive material 33 is attracted to the upper electrode 40, so that the upper electrode 40 and the conductive part 32 are connected by the nanomagnetic conductive material 33, and the power device is turned on; by adding a voltage to repel the nanomagnetic conductive material 33 to the control pole 60, the nanomagnetic conductive material 33 is repelled to the lower electrode 20, so that the upper electrode 40 and the conductive part 32 are disconnected, and the power device is turned off, thereby realizing the switching function of the power device. By using the nanomagnetic conductive material 33 as a conductive medium, the switch of the device is controlled by attraction and repulsion. The magnetic material at the nanoscale allows the device to have a higher breakdown voltage. At the same time, since the material can respond quickly to changes in the electric field, the switching speed can also be improved. At the same time, since the nanomagnetic conductive material 33 has a strong resistance to current and voltage shocks, this also greatly improves the stability and reliability of the components. Therefore, by using the nanomagnetic conductive material 33 to replace the semiconductor material, the switch power device can be manufactured, which can effectively solve the problems of high temperature leakage, large on-resistance, poor reliability, etc. brought by traditional semiconductor materials.

[0037] Specifically, the lower electrode 20, the upper electrode 40, the control electrode 60 and the conductive part 32 are all used to achieve rapid flow of electrons, and the main selected materials are common metals of semiconductor materials, such as aluminum and its oxides (aluminum oxide) and compounds, copper and its oxides and compounds, etc.

[0038] See also Figure 2 and Figure 3 In a possible implementation, the power device further includes: a substrate 10, a lower electrode 20 is disposed above the substrate 10, and the substrate 10 mainly provides structural support for the power device, and commonly used insulating or semiconductor materials such as silicon or glass can be selected.

[0039] In a possible implementation, the height of the conductive part 32 is greater than half the height of the cavity 31, and the height of the nano-magnetic conductive material 33 is less than or equal to half the height of the cavity 31. Specifically, the cavity 31 provided in the insulating support 30 has a certain height, and the conductive part 32 and the nano-magnetic conductive material 33 are inside it. The height of the conductive part 32 is designed to be greater than half the height of the cavity 31 in order to achieve excellent electron mobility. In the embodiment, the conductive part 32 mainly plays a conductive role. It is located in the cavity 31 and contacts the lower electrode 20. The height of the conductive part 32 is designed to be greater than half the height of the cavity 31, which can ensure that the conductive part 32 has enough material to carry the moving electrons to form a larger current.

[0040] If the height of the conductive part 32 is too small, it may lead to a narrow channel for electron circulation, limit the size of the current, and may affect the transmission efficiency of electrons, thereby affecting the working efficiency and stability of the entire power device. Therefore, the height of the conductive part 32 is designed to be greater than half the height of the cavity 31, so that a stable and large flow of electrons can be obtained, thereby improving the operating efficiency of the device. This is also a result of weighing the size, working efficiency and stability of the device. This design fully takes into account the needs of electron movement in actual work to ensure the optimal working performance of the power device.

[0041] The height of the nanomagnetic conductive material 33 is designed to be less than or equal to half the height of the cavity 31, mainly to achieve effective control of the nanomagnetic conductive material 33, and then to achieve the switch control of the power device. Under the action of voltage, the nanomagnetic conductive material 33 will be attracted to the upper electrode 40, or return to the lower electrode 20 after the voltage stops acting. If the height of the nanomagnetic conductive material 33 is too high, it may slow down its movement speed under the action of the electric field, or make it unable to be completely driven to the expected position. Therefore, designing it to be less than or equal to half the height of the cavity 31 can ensure that it can respond to the change of the electric field quickly and accurately, thereby achieving rapid switching of the switch state of the power device.

[0042] In a possible implementation, a metal layer is provided on the surface of the nano-magnetic conductive material 33. Specifically, in order to be able to quickly change the on / off state of the power device, we need the nano-magnetic conductive material 33 to have good electrical conductivity. By providing a metal layer on the surface of the nano-magnetic conductive material 33, the nano-magnetic conductive material 33 can have higher conductivity and lower resistivity when forming a conductive channel, which will help improve the working efficiency and stability of the power device.

[0043] In a possible implementation, the control electrode 60 and the insulating layer 50 are provided with a void portion 71 connected to the upper electrode 40 . The void portion 71 may be a hole or a gap, etc., so that the control electrode 60 and the upper electrode 40 are exposed to facilitate electrical connection.

[0044] In a possible implementation, the cavity 31 is arranged below the avoidance portion 71. Specifically, the purpose of forming the cavity 31 is to fill the nano-magnetic conductive material 33, and to change the state of the nano-magnetic conductive material 33 by changing the voltage of the control electrode 60. However, after the control electrode 60 and the insulating layer 50 are corroded to generate the avoidance portion 71, the control electrode 60 at the position corresponding to the avoidance portion 71 has been corroded, and even if the cavity 31 is set, it cannot work normally. Therefore, the cavity 31 does not need to be formed at the position of the insulating support body 30 corresponding to the avoidance portion 71.

[0045] The present disclosure also provides a method for manufacturing a power device, the method for manufacturing a power device as in the above embodiment, the method comprising:

[0046] See also Figure 2 and Figure 4 In step S1, a lower electrode 20 is formed on a substrate 10, and an insulating support layer 34 is formed above the lower electrode 20, thereby forming a bottom structure of the power device; in step S2, the insulating support layer 34 is corroded to form a plurality of insulating support bodies 30 arranged at intervals, so that cavities 31 are formed between adjacent insulating support bodies 30, and these cavities 31 will provide space for placing the conductive part 32 and the nano-magnetic conductive material 33 in the subsequent steps; in step S3, a conductive part 32 is formed on at least one side wall of the insulating support body 30 in the cavity 31, and a gap 41 is formed between the conductive part 32 and the top of the cavity 31, and the conductive part 32 is electrically connected to the lower electrode 20, and a conductive part 32 is formed inside the cavity 31 along at least one side wall of the insulating support body 30, and the conductive part 32 is located below the top of the cavity 31 and is electrically connected to the lower electrode 20, and the gap 41 formed above the conductive part 32 and the top of the cavity 31 is formed between the conductive part 32 and the lower electrode 20. The gap 41 provides an empty space; in step S4, the nanomagnetic conductive material 33 is filled in the cavity 31, and the height of the nanomagnetic conductive material 33 is greater than the height of the gap 41 and less than the height of the cavity 31. The substrate 10, the lower electrode 20, the insulating support 30 and the nanomagnetic conductive material 33 form a first partial structure. In this step, the nanomagnetic conductive material 33 begins to be filled in the cavity 31, and the height of the nanomagnetic conductive material 33 is set to be greater than the height of the gap 41. The purpose of this design is to ensure that the nanomagnetic conductive material 33 can fully fill the gap 41, so that in the following work, the nanomagnetic conductive material 33 can be used to provide electrical transmission for the conductive part 32 and the upper electrode 40. At the same time, the height of the nanomagnetic conductive material 33 also needs to be less than the height of the cavity 31, so that the nanomagnetic conductive material 33 can be prevented from exceeding the scope of the cavity 31. As for the substrate 10, the lower electrode 20, the insulating support 30 and the nanomagnetic conductive material 33 forming the first partial structure, they constitute the basic part in the process of constructing the overall structure of the power device;

[0047] See also Figure 3 and Figure 5In step S5, a control electrode 60 is generated on an insulating substrate 70. This step is intended to provide a surface for the next step of preparing an insulating layer 50. In step S6, an insulating layer 50 is generated on the control electrode 60, and an upper electrode 40 is generated on the insulating layer 50. The insulating substrate 70, the control electrode 60, the insulating layer 50 and the upper electrode 40 form a second partial structure. In step S7, the first partial structure and the second partial structure are vacuum sintered to connect the upper electrode 40 to the insulating support 30 to form a whole. The main purpose of this step is to combine the two major structures manufactured previously by high-temperature sintering to form a complete device as a whole. It can be understood that vacuum sintering is a commonly used material processing technology. During the process, the heating device and the heated object are usually placed in a sealed vacuum or inert gas-based environment. This environment can prevent the materials involved from reacting with other gases such as oxygen at high temperatures to form oxides, nitrates, etc., thereby reducing product performance. Sintering in a vacuum or inert gas environment can achieve better sintering effect and better product properties; in step S8, the insulating substrate 70 is removed, the control electrode 60 and the insulating layer 50 are corroded to form a space avoidance portion 71 to expose the control electrode 60 and the upper electrode 40. Specifically, when the main structure has been formed and further refined processing is required, such as corroding the control electrode 60 and corroding the insulating layer 50 to form a specific channel for electrical connection, the insulating substrate 70 needs to be removed for subsequent steps. The purpose of corroding the control electrode 60 and the insulating layer 50 is to form a space avoidance portion 71, so that the control electrode 60 and the upper electrode 40 are exposed to facilitate electrical connection.

[0048] Preferably, the control electrode 60 and the insulating layer 50 can be corroded by photolithography. Specifically, photolithography is a very precise technology at the micron level or smaller, which is widely used in microelectronics, nanotechnology and semiconductor industries. Photolithography is performed by irradiating light onto the control electrode 60 and the insulating layer 50, and corrosion is generated in selected locations through a photochemical reaction, thereby changing the shapes of the control electrode 60 and the insulating layer 50, thereby generating a void portion 71.

[0049] In a possible implementation, the manufacturing method further includes:

[0050] Independent power devices are formed by cutting according to the smallest unit of the package, and the substrate 10 is removed. Specifically, independent power devices can be generated by cutting according to the smallest unit of the package. In addition, the step of removing the substrate 10 is usually to expose the back side of the device so that subsequent processing or packaging steps can be performed, such as welding, installing a heat sink, etc.

[0051] In a possible implementation, the step of forming the conductive portion 32 located on the side wall of the cavity 31 in the cavity 31 specifically includes:

[0052] Metal is deposited in the cavity 31, and then the metal is etched to form the conductive portion 32. Specifically, after depositing the metal in the cavity 31, the excess metal is etched away, so that the conductive portion 32 formed by the metal can be accurately formed on the side wall of the cavity 31. When performing the deposition and etching steps, various process technologies may need to be used, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), electrochemical deposition and other deposition technologies, as well as wet etching, dry etching (such as plasma etching) and other etching processes.

[0053] In a possible implementation, before the step of filling the nano-magnetic conductive material 33 in the cavity 31, it also includes: electroplating a metal layer on the surface of the nano-magnetic conductive material 33. Specifically, since the metal itself has good conductivity, the metal layer formed by electroplating can provide more migration channels for electrons, thereby improving the conductivity of the nano-magnetic conductive material 33.

[0054] The present disclosure also provides a method for using a power device, which is applied to a power device as in the above embodiment, and the method includes:

[0055] The control electrode 60 applies a voltage to attract the nano-magnetic conductive material 33, and the nano-magnetic conductive material 33 is attracted to the upper electrode 40, so that the upper electrode 40 and the conductive part 32 are connected by the nano-magnetic conductive material 33, and the power device is turned on;

[0056] The control electrode 60 applies a voltage that repels the nanomagnetic conductive material 33 , and the nanomagnetic conductive material 33 is repelled to the lower electrode 20 , so that the upper electrode 40 and the conductive part 32 are disconnected, and the power device is turned off.

[0057] This method of use utilizes the characteristics of the nanomagnetic conductive material 33 to perform device switching operations. This is a very innovative method of use. Under the action of voltage, the nanomagnetic conductive material 33 moves between the lower electrode 20 and the upper electrode 40, plays the role of a switch, and realizes the opening and closing of the power device. The advantages of this method are: using the nanomagnetic conductive material 33 to realize microscopic scale circuit switching, with high precision and response speed, and also provides a new device switching strategy, which can greatly enhance the functionality and application range of the device.

[0058] The matters not described in detail in the present invention are all known technologies to those skilled in the art.

[0059] It is obvious to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the present invention can be implemented in other specific forms without departing from the spirit or essential features of the present invention. Therefore, the embodiments should be regarded as exemplary and non-restrictive from any point of view, and the scope of the present invention is defined by the appended claims rather than the above description, and it is intended that all changes falling within the meaning and scope of the equivalent elements of the claims be included in the present invention. Any reference numeral in a claim should not be regarded as limiting the claim to which it relates.

Claims

1. A power device, characterized in that: include: Lower electrode; Insulating supports, wherein a plurality of insulating supports are arranged above the lower electrode at intervals, a cavity is formed between adjacent insulating supports, the cavity is filled with nano-magnetic conductive material, a side wall of the cavity is provided with a conductive portion, and the conductive portion is electrically connected to the lower electrode; An upper electrode, wherein the upper electrode is disposed above the insulating support, a gap exists between the upper electrode and the conductive portion, and a height of the nano-magnetic conductive material is greater than a height of the gap and less than a height of the cavity; an insulating layer, the insulating layer being disposed above the upper electrode; A control electrode, wherein the control electrode is arranged above the insulating layer, and the control electrode is used to apply a magnetic attraction force or a magnetic repulsion force to the nanomagnetic conductive material. When the control electrode applies a magnetic attraction force to the nanomagnetic conductive material, the nanomagnetic conductive material moves toward the upper electrode, electrically connecting the upper electrode and the conductive part. When the control electrode applies a magnetic repulsion force to the nanomagnetic conductive material, the nanomagnetic conductive material moves toward the lower electrode, and the electrical connection between the conductive part and the upper electrode is disconnected.

2. A power device according to claim 1, characterized in that: Also includes: The lower electrode is arranged on the substrate.

3. A power device according to claim 1, characterized in that: The height of the conductive part is greater than half of the height of the cavity, and the height of the nano-magnetic conductive material is less than or equal to half of the height of the cavity.

4. A power device according to claim 1, characterized in that: A metal layer is provided on the surface of the nano magnetic conductive material.

5. A power device according to claim 1, characterized in that: The control electrode and the insulating layer are provided with a gap portion connected to the upper electrode.

6. A power device according to claim 5, characterized in that: The cavity is arranged below the air-avoiding portion.

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