Plasma enhanced chemical vapor deposition equipment

Abstract

The utility model provides plasma enhanced chemical vapor deposition equipment. The equipment comprises a reaction cavity, a reaction cavity cover, a radio frequency shielding case, a gas buffer cavity, a wafer base station, a radio frequency generator and a radio frequency matcher, and further comprises a radio frequency feed-in rod and an input module connected to the middle of the gas buffer cavity, one end of the radio frequency feed-in rod is electrically connected with the radio frequency matcher, and the other end of the radio frequency feed-in rod is electrically connected with the wafer base station. The other end of the radio frequency matcher passes through the middle part of the radio frequency shielding cover and is electrically connected with the input module, and the radio frequency matcher feeds radio frequency current into the spray header of the gas buffer cavity serving as a radio frequency upper electrode through the radio frequency feed-in rod, the input module and the top cover; plasmas in central symmetry distribution are formed between the spray head and the wafer base station, and then a radio frequency current loop is formed through the wafer base station, the reaction cavity and the grounded radio frequency shielding case. According to the utility model, the plasma distribution uniformity and the film forming uniformity can be improved.

Description

Technical Field

[0001] The utility model relates to the field of semiconductor manufacturing, in particular to plasma enhanced chemical vapor deposition equipment. Background Art

[0002] In the semiconductor manufacturing process, plasma enhanced chemical vapor deposition (PECVD) equipment is needed to deposit conductive or insulating thin films, which can play an important role in blocking the penetration of pollutants and impurities, improving light absorption, and blocking etching. As the line width of chips becomes narrower and the structure becomes more complex, the requirements for the refinement of film performance parameters are also increasing. For example, the requirements for film uniformity and particle quantity control in the front-end process of advanced processes are gradually increasing.

[0003] In the prior art, the RF power supply of the PECVD equipment is usually fed into the shower head at one side rather than the center, which makes the plasma field between the shower head and the wafer unevenly distributed, thereby affecting the uniformity of the film deposition rate on the circular wafer.

[0004] Therefore, how to provide a plasma enhanced chemical vapor deposition device and method to improve the uniformity of plasma distribution and film formation has become a technical problem that needs to be solved urgently in the industry. Utility Model Content

[0005] In view of the above-mentioned problems of the prior art, the utility model proposes a plasma enhanced chemical vapor deposition device, which includes a reaction chamber, a reaction chamber cover, a radio frequency shielding cover, a gas buffer chamber, a wafer base, a radio frequency generator and a radio frequency matcher, wherein the wafer base is arranged in the reaction chamber, and the reaction chamber, the reaction chamber cover, the gas buffer chamber and the radio frequency shielding cover are stacked in sequence from bottom to top, and the gas buffer chamber includes a top cover arranged above and below, a shower head and a buffer chamber formed therebetween, the radio frequency shielding cover covers the gas buffer chamber at the bottom and a radio frequency matcher electrically connected to the radio frequency generator is arranged at the top The plasma enhanced chemical vapor deposition equipment also includes an RF feeding rod and an input module connected to the middle of the gas buffer chamber. One end of the RF feeding rod is electrically connected to the RF matcher, and the other end passes through the middle of the RF shielding cover and is electrically connected to the input module. The RF matcher feeds the RF current to the shower head serving as the RF upper electrode through the RF feeding rod, the input module and the top cover, forming a centrally symmetrically distributed plasma between the shower head and the wafer base, and then forming an RF current loop through the wafer base, the reaction chamber, and the grounded RF shielding cover.

[0006] In one embodiment, the RF feeding rod, the input module, the gas buffer chamber and the wafer base are coaxially arranged from top to bottom and each is a centrally symmetrical structure.

[0007] In one embodiment, the RF feeding rod is a copper rod.

[0008] In one embodiment, the input module comprises a top groove, which is arranged at the top center of the input module and matches the RF feeding rod, and the RF feeding rod is arranged in the top groove.

[0009] In one embodiment, the input module comprises a gas passage, and the gas passage passes through the input module and is used to deliver the deposition reaction gas into the gas buffer chamber.

[0010] In one embodiment, an insulating ring is provided between the gas buffer chamber and the reaction chamber cover.

[0011] In a further embodiment, the insulating ring is a ceramic ring.

[0012] In one embodiment, the RF matcher includes a shell, an input end, a matching module, and an output end. The shell is grounded, the input end is electrically connected to the RF generator, and the output end is electrically connected to the RF feeding rod. The matching module is composed of capacitors and inductors, and changes the impedance matching between the RF generator and the load by adjusting its internal inductance and capacitance to achieve optimal power transmission and reflection loss.

[0013] In a further embodiment, the reaction chamber and the reaction chamber cover are grounded by contacting the shell through a radio frequency shielding cover.

[0014] In a further embodiment, the wafer base is grounded by contacting the reaction chamber through a bellows on the outside of the telescopic rod.

[0015] Compared with the prior art, the plasma enhanced chemical vapor deposition equipment of the utility model further includes an RF feeding rod and an input module connected to the middle of the gas buffer chamber, one end of the RF feeding rod is electrically connected to the RF matcher, and the other end passes through the middle of the RF shielding cover and is electrically connected to the input module, and the RF matcher feeds the RF current to the shower head as the RF upper electrode through the RF feeding rod, the input module and the top cover, forming a centrally symmetrically distributed plasma between the shower head and the wafer base, and then forming an RF current loop through the wafer base, the reaction chamber, and the grounded RF shielding cover. The utility model can improve the uniformity of plasma distribution and film formation uniformity. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0017] Figure 1 It is a schematic diagram of the composition structure of a plasma enhanced chemical vapor deposition device according to an embodiment of the utility model;

[0018] Figure 2 for Figure 1 A schematic diagram of the partial composition structure of the plasma enhanced chemical vapor deposition equipment shown; and

[0019] Figure 3 It is a schematic diagram of the process of an embodiment of a plasma enhanced chemical vapor deposition method according to the utility model. DETAILED DESCRIPTION

[0020] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and functions of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this utility model are limited to this implementation. On the contrary, the purpose of introducing the utility model in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present utility model. In order to provide an in-depth understanding of the present utility model, the following description will include many specific details. The present utility model can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present utility model, some specific details will be omitted in the description.

[0021] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0022] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0023] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as the second component, region, layer and / or part without departing from some embodiments of the present invention.

[0024] The utility model provides a plasma enhanced chemical vapor deposition device, which comprises a reaction chamber, a reaction chamber cover, a radio frequency shielding cover, a gas buffer chamber, a wafer base, a radio frequency generator and a radio frequency matcher, wherein the wafer base is arranged in the reaction chamber, the reaction chamber, the reaction chamber cover, the gas buffer chamber and the radio frequency shielding cover are stacked in sequence from bottom to top, the gas buffer chamber comprises a top cover arranged above and below, a shower head and a buffer chamber formed therebetween, the radio frequency shielding cover covers the gas buffer chamber at the bottom and a radio frequency matcher electrically connected to the radio frequency generator is arranged at the top, the plasma The bulk enhanced chemical vapor deposition equipment also includes an RF feeding rod and an input module connected to the middle of the gas buffer chamber, one end of the RF feeding rod is electrically connected to the RF matcher, and the other end passes through the middle of the RF shielding cover and is electrically connected to the input module. The RF matcher feeds RF current to the shower head serving as the RF upper electrode through the RF feeding rod, the input module and the top cover, forming a centrally symmetrically distributed plasma between the shower head and the wafer base, and then forming an RF current loop through the wafer base, the reaction chamber, and the grounded RF shielding cover.

[0025] The RF feeding rod, input module, gas buffer chamber and wafer base are coaxially arranged from top to bottom and each is a centrally symmetrical structure. The RF feeding rod is a copper rod. The input module includes a top groove and an air channel, the top groove is arranged at the top center of the input module and matches the RF feeding rod, the RF feeding rod is arranged in the top groove, and the air channel passes through the input module to send the deposition reaction gas into the gas buffer chamber. An insulating ring is arranged between the gas buffer chamber and the reaction chamber cover. The RF matcher includes a grounded shell, the reaction chamber and the reaction chamber cover are grounded by contacting the shell through a RF shielding cover, and the wafer base is grounded by contacting the reaction chamber through the bellows on the outside of its telescopic rod.

[0026] The utility model also provides a plasma enhanced chemical vapor deposition method, which comprises the following steps:

[0027] Step 1, providing a plasma enhanced chemical vapor deposition device including a reaction chamber, a reaction chamber cover, a radio frequency shielding cover, a gas buffer chamber, a wafer base, a radio frequency generator, a radio frequency matcher, a radio frequency feeding rod and an input module, wherein the gas buffer chamber includes a top cover arranged above and below, a shower head and a buffer chamber formed therebetween;

[0028] Step 2: placing the wafer base in the reaction chamber, placing the reaction chamber cover on the reaction chamber, placing the gas buffer chamber on the reaction chamber cover and connecting the input module to the middle of the gas buffer chamber, placing the radio frequency shielding cover on the reaction chamber cover and making the bottom of the radio frequency shielding cover cover the gas buffer chamber and the top of the radio frequency shielding cover is provided with a radio frequency matcher electrically connected to the radio frequency generator;

[0029] Step 3: One end of the RF feeding rod is electrically connected to the RF matching device, and the other end is passed through the middle of the RF shielding cover to be electrically connected to the input module;

[0030] Step 4: The RF matcher feeds the RF current to the shower head serving as the RF upper electrode through the RF feeding rod, the input module and the top cover, forming a centrally symmetrically distributed plasma between the shower head and the wafer base, and the input module delivers the reaction gas to the buffer chamber and then to the reaction chamber after buffering treatment, thereby depositing a thin film on the wafer supported by the wafer base, and forming an RF current loop through the wafer base, the reaction chamber and the grounded RF shielding cover.

[0031] The RF feeding rod provided in step one is a copper rod. Step three also includes coaxially arranging the RF feeding rod, input module, gas buffer chamber and wafer base, which are all centrally symmetrical structures, from top to bottom. The input module provided in step one includes a top groove and an air channel, the top groove is arranged at the top center of the input module and matches the RF feeding rod, and the air channel passes through the input module; in step two, connecting the input module to the middle of the gas buffer chamber includes connecting the input module to the middle of the gas buffer chamber and connecting the air channel of the input module to the gas buffer chamber to deliver the deposition reaction gas into the gas buffer chamber, and in step three, electrically connecting the other end of the RF feeding rod to the input module includes setting the other end of the RF feeding rod in the top groove. Step two sets the gas buffer chamber on the reaction chamber cover, including setting an insulating ring on the reaction chamber cover and setting the shower head of the gas buffer chamber on the insulating ring. The RF matcher provided in step one includes a grounded shell, the reaction chamber and the reaction chamber cover are grounded by contacting the shell through a RF shielding cover, and the wafer base is grounded by contacting the reaction chamber through a bellows on the outside of its telescopic rod.

[0032] Please refer to Figure 1 as well as Figure 2 , Figure 1 FIG. 1 is a schematic diagram of the composition structure of a plasma enhanced chemical vapor deposition device PECVD according to an embodiment of the utility model. Figure 2 for Figure 1 The schematic diagram of the partial structure of the plasma enhanced chemical vapor deposition equipment is shown in FIG. Figure 1 and Figure 2 As shown, the PECVD device includes a radio frequency generator 10, a radio frequency matcher 11, a radio frequency shielding cover 12, a radio frequency feed rod 13, an input module 14, a gas buffer chamber 15, a reaction chamber cover 16, a reaction chamber 17, and a wafer base 18. The wafer base 18 is arranged in the reaction chamber 17 and has a heating module (not shown) for heating the wafer. The reaction chamber 17, the reaction chamber cover 16, the gas buffer chamber 15 and the radio frequency shielding cover 12 are stacked from bottom to top. The gas buffer chamber 15 includes a top cover 150 arranged above and below, a shower head 152 and a buffer chamber 154 formed therebetween.

[0033] One end of the RF feeding rod 13 is electrically connected to the RF matcher 11, and the other end passes through the middle of the RF shielding cover 12 and is electrically connected to the input module 14. The RF feeding rod 13 can be a copper rod, more specifically a gold-plated or silver-plated copper rod. The input module 14 is connected to the middle of the gas buffer chamber 15, and the RF matcher 11 feeds the RF current to the shower head 152 serving as the RF upper electrode through the RF feeding rod 13, the input module 14 and the top cover 150, forming a centrally symmetrically distributed plasma between the shower head 152 and the wafer base 18, and then forming an RF current loop through the grounded wafer base 18 reaction chamber 17, and the grounded RF shielding cover 12.

[0034] like Figure 1As shown, the RF feeding rod 13, input module 14, gas buffer chamber 15 and wafer base 18 are coaxially arranged from top to bottom and each is a central symmetrical structure. The bottom of the RF shielding cover 12 covers the gas buffer chamber 15, and the top of the RF shielding cover 12 is provided with a RF matching device 11 electrically connected to the RF generator 10, and the RF generator 10 and the RF matching device 11 can be electrically connected through a cable. The RF matching device 11 includes a shell 110, an input end 112, a matching module 114, and an output end 116. The shell 110 is grounded G, the input end 112 is electrically connected to the RF generator (or RF power supply) 10, and the output end 116 is electrically connected to the RF feeding rod 13. The matching module 114 is composed of capacitors and inductors, etc., which changes the impedance matching between the RF generator 10 and the load by adjusting its internal inductance, capacitance, etc. to achieve optimal power transmission and reflection loss. The reaction chamber 17 and the reaction chamber cover 16 are grounded by contacting with the shell 110 through the RF shielding cover 12. A telescopic rod 180 for driving the wafer base 18 to move up and down is provided at the lower part of the wafer base 18. The wafer base 18 is grounded by contacting with the reaction chamber 17 through a bellows 182 on the outside of the telescopic rod 180.

[0035] The RF current flows along Figure 1 The RF current flows in the direction indicated by the dotted arrow, along the surface of the RF feeding rod 13, the surface of the input module 14, the surface of the top cover 150, and the surface of the shower head 152. Then, part of the RF current flows through the surface of the wafer base 18 and the telescopic rod 180, and the other part flows along the inner wall of the reaction chamber 17, and then converges to the outer wall of the reaction chamber 17, and finally forms the entire RF current loop through the surface of the RF shielding cover 12.

[0036] like Figure 2 As shown, reference Figure 1 The input module 14 includes a top groove 140 and an air channel 142. The top groove 140 is arranged at the top center of the input module 14 and matches the RF feeding rod 13. The RF feeding rod 13 is arranged in the top groove 140. The air channel 142 passes through the input module 14 to deliver the deposition reaction gas into the gas buffer chamber 15.

[0037] An insulating ring 19 is disposed between the gas buffer chamber 15 and the reaction chamber cover 16 . The insulating ring 19 may be a ceramic ring or a ring made of other materials currently or in the future used in the industry.

[0038] See also Figure 3 , combined with reference to Figure 1 and Figure 2 , Figure 3 FIG. 1 is a schematic diagram of a process of a plasma enhanced chemical vapor deposition method according to an embodiment of the present utility model. Figure 3 As shown, a plasma enhanced chemical vapor deposition method 30 of the utility model first performs step S300, providing a plasma enhanced chemical vapor deposition device including a reaction chamber 17, a reaction chamber cover 16, a radio frequency shielding cover 12, a gas buffer chamber 15, a wafer base 18, a radio frequency generator 10, a radio frequency matcher 11, a radio frequency feeding rod 13 and an input module 14, wherein the gas buffer chamber 15 includes a top cover 150 arranged up and down, a shower head 152 and a buffer chamber 154 formed therebetween. In this embodiment, the radio frequency feeding rod 13 provided in step S300 is a copper rod, and the input module 14 provided includes a top groove 140 and an air channel 142, wherein the top groove 140 is arranged at the top center of the input module 14 and matches the radio frequency feeding rod 13, and the air channel 142 passes through the input module 14. The RF matcher 11 provided in step S300 includes a grounded shell 110, the reaction chamber 17 and the reaction chamber cover 16 are grounded by contacting the shell 110 through the RF shielding cover 12, and the wafer base 18 is grounded by contacting the reaction chamber 17 through the bellows 182 outside the telescopic rod 180.

[0039] The method 30 then proceeds to step S310, wherein the wafer base 18 is disposed in the reaction chamber 17, the reaction chamber cover 16 is disposed on the reaction chamber 17, the gas buffer chamber 15 is disposed on the reaction chamber cover 16 and the input module 14 is connected to the middle of the gas buffer chamber 15, and the radio frequency shielding cover 12 is disposed on the reaction chamber cover 16 so that the bottom of the radio frequency shielding cover 12 covers the gas buffer chamber 15 and the top thereof is provided with a radio frequency matching device 11 electrically connected to the radio frequency generator 10. In this embodiment, in step S310, connecting the input module 14 to the middle of the gas buffer chamber 15 includes connecting the input module 14 to the middle of the gas buffer chamber 15 and communicating the gas channel 142 of the input module 14 with the gas buffer chamber 15 so as to deliver the deposition reaction gas into the gas buffer chamber 15. In step S310 , disposing the gas buffer chamber 15 on the reaction chamber cover 16 includes disposing an insulating ring 19 on the reaction chamber cover 16 and disposing a shower head 152 of the gas buffer chamber 15 on the insulating ring 19 .

[0040] The method 30 then proceeds to step S320, where one end of the RF feeding rod 13 is electrically connected to the RF matcher 11, and the other end passes through the middle of the RF shielding cover 12 and is electrically connected to the input module 14. In step S320, electrically connecting the other end of the RF feeding rod 13 to the input module 14 includes placing the other end of the RF feeding rod 13 in the top groove 140.

[0041] The method 30 then proceeds to step S330 to coaxially arrange the RF feeding rod 13 , the input module 14 , the gas buffer chamber 15 and the wafer base 18 , which are all centrally symmetrical structures, from top to bottom.

[0042] The method 30 then proceeds to step S340, wherein the RF matcher 11 feeds the RF current to the shower head 152 serving as the RF upper electrode through the RF feeding rod 13, the input module 14 and the top cover 150, and forms a centrally symmetrically distributed plasma between the shower head 152 and the wafer base 18. The input module 14 delivers the reaction gas to the buffer chamber 154 and delivers it to the reaction chamber 17 after buffering treatment, thereby depositing a thin film on the wafer supported by the wafer base 18, and forming an RF current loop through the wafer base 18, the reaction chamber 17, and the grounded RF shielding cover 12.

[0043] In step S340, the RF current is Figure 1 The RF current flows in the direction indicated by the dotted arrow, along the surface of the RF feeding rod 13, the surface of the input module 14, the surface of the top cover 150, and the surface of the shower head 152. Then, part of the RF current flows through the surface of the wafer base 18 and the telescopic rod 180, and the other part flows along the inner wall of the reaction chamber 17, and then converges to the outer wall of the reaction chamber 17, and finally forms the entire RF current loop through the surface of the RF shielding cover 12.

[0044] In summary, the plasma enhanced chemical vapor deposition equipment of the utility model comprises a reaction chamber, a reaction chamber cover, a radio frequency shielding cover, a gas buffer chamber, a wafer base, a radio frequency generator and a radio frequency matcher, wherein the wafer base is arranged in the reaction chamber, the reaction chamber, the reaction chamber cover, the gas buffer chamber and the radio frequency shielding cover are stacked in sequence from bottom to top, the gas buffer chamber comprises a top cover arranged above and below, a shower head and a buffer chamber formed therebetween, the radio frequency shielding cover covers the gas buffer chamber at the bottom and a radio frequency matcher electrically connected to the radio frequency generator is arranged at the top, the plasma enhanced The strong chemical vapor deposition equipment also includes an RF feeding rod and an input module connected to the middle of the gas buffer chamber, one end of the RF feeding rod is electrically connected to the RF matcher, and the other end passes through the middle of the RF shielding cover and is electrically connected to the input module, and the RF matcher feeds the RF current to the shower head as the RF upper electrode through the RF feeding rod, the input module and the top cover, forming a centrally symmetrically distributed plasma between the shower head and the grounded wafer base, and then forming an RF current loop through the wafer base, the reaction chamber, and the grounded RF shielding cover. The utility model can improve the uniformity of plasma distribution and film formation uniformity.

[0045] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the universal principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein. The above-mentioned embodiments are provided to persons familiar with the art to implement or use the utility model, and persons familiar with the art may make various modifications or changes to the above-mentioned embodiments without departing from the utility model concept of the utility model, and thus the scope of protection of the utility model is not limited by the above-mentioned embodiments, but should be in accordance with the maximum scope of the innovative features mentioned in the claims.

Claims

1. A plasma enhanced chemical vapor deposition device, comprising a reaction chamber, a reaction chamber cover, a radio frequency shielding cover, a gas buffer chamber, a wafer base, a radio frequency generator and a radio frequency matcher, wherein the wafer base is arranged in the reaction chamber, the reaction chamber, the reaction chamber cover, the gas buffer chamber and the radio frequency shielding cover are stacked in sequence from bottom to top, the gas buffer chamber comprises a top cover arranged above and below, a shower head and a buffer chamber formed therebetween, the radio frequency shielding cover covers the gas buffer chamber at the bottom and a radio frequency matcher electrically connected to the radio frequency generator is arranged at the top, characterized in that: The plasma enhanced chemical vapor deposition equipment also includes an RF feeding rod and an input module connected to the middle of the gas buffer chamber. One end of the RF feeding rod is electrically connected to the RF matcher, and the other end passes through the middle of the RF shielding cover and is electrically connected to the input module. The RF matcher feeds RF current to the shower head serving as the RF upper electrode through the RF feeding rod, the input module and the top cover, forming a centrally symmetrically distributed plasma between the shower head and the wafer base, and then forming an RF current loop through the wafer base, the reaction chamber, and the grounded RF shielding cover.

2. The plasma enhanced chemical vapor deposition equipment according to claim 1, characterized in that: The radio frequency feeding rod, the input module, the gas buffer chamber and the wafer base are coaxially arranged from top to bottom and are each a centrally symmetrical structure.

3. The plasma enhanced chemical vapor deposition equipment according to claim 1, characterized in that: The radio frequency feeding rod is a copper rod.

4. The plasma enhanced chemical vapor deposition equipment according to claim 1, characterized in that: The input module comprises a top groove, which is arranged at the top center of the input module and matches the RF feeding rod, and the RF feeding rod is arranged in the top groove.

5. The plasma enhanced chemical vapor deposition equipment according to claim 1, characterized in that: The input module includes a gas passage, which passes through the input module and is used to deliver a deposition reaction gas into the gas buffer chamber.

6. The plasma enhanced chemical vapor deposition equipment according to claim 1, characterized in that: An insulating ring is arranged between the gas buffer chamber and the reaction chamber cover.

7. The plasma enhanced chemical vapor deposition equipment according to claim 6, characterized in that: The insulating ring is a ceramic ring.

8. The plasma enhanced chemical vapor deposition equipment according to claim 1, characterized in that: The RF matcher includes a shell, an input end, a matching module and an output end. The shell is grounded, the input end is electrically connected to the RF generator, and the output end is electrically connected to the RF feeding rod. The matching module is composed of capacitors and inductors. It changes the impedance matching between the RF generator and the load by adjusting its internal inductance and capacitance to achieve optimal power transmission and reflection loss.

9. The plasma enhanced chemical vapor deposition equipment according to claim 8, characterized in that: The reaction chamber and the reaction chamber cover are in contact with the shell through a radio frequency shielding cover and are grounded.

10. The plasma enhanced chemical vapor deposition equipment according to claim 9, characterized in that: The wafer base is grounded by contacting the reaction chamber through the bellows on the outer side of the telescopic rod.

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