Semiconductor material epitaxial growth device with graphite disc

Abstract

The utility model belongs to the technical field of semiconductor epitaxial growth equipment, and particularly relates to a semiconductor material epitaxial growth device with a graphite plate, which comprises a reaction cavity tank body and a fixing ring, the fixing ring is fixedly arranged at the lower part of the outer surface of the reaction cavity tank body, a supporting column is fixedly arranged on the bottom surface of the fixing ring, and a connecting base is fixedly arranged on the bottom surface of the supporting column. A placing mechanism is arranged in the reaction cavity tank body. According to the semiconductor material epitaxial growth device with the graphite disc, the fixed rod is fixedly mounted on the bottom surface of the cover plate, and the electric heating lamp is fixedly mounted on the bottom surface of the fixed rod, so that electromagnetic waves can be generated through irradiation to perform epitaxial growth irradiation on a semiconductor material; and meanwhile, a spiral electric heating pipe mounted at the lower part in the reaction cavity tank body performs high-temperature heating, a substrate groove is formed in the inner bottom surface of a square groove formed in the upper surface of the graphite disc body, and a rectangular convex block is arranged in the substrate groove, so that a substrate can be controlled in a fixed area to facilitate operation.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor epitaxial growth equipment, in particular to a semiconductor material epitaxial growth device with a graphite disk. Background Art

[0002] Epitaxial growth apparatuses are widely used as apparatuses for forming a single crystal layer (epitaxial layer) on a surface of, for example, a silicon wafer. In a single wafer type epitaxial growth apparatus, when a source gas is introduced into a reaction chamber in which a wafer is horizontally placed, heating is performed to obtain a predetermined temperature, thereby growing an epitaxial layer.

[0003] In the prior art, the surface temperature of the wafer in the center area of ​​the wafer is higher than that in the outer area due to the superposition effect of electromagnetic waves when irradiated by a halogen lamp, which causes the epitaxial growth thickness in the center area of ​​the wafer to be higher than that in the outer area, thereby affecting the wafer quality and the implementation of subsequent processing technology for chip manufacturing.

[0004] Therefore, we proposed a semiconductor material epitaxial growth device with a graphite disk to solve the above problems. Utility Model Content

[0005] The utility model aims to provide a semiconductor material epitaxial growth device with a graphite disk to solve the problems raised in the above background technology.

[0006] To achieve the above-mentioned purpose, the utility model provides the following technical solutions: a semiconductor material epitaxial growth device with a graphite disk, comprising a reaction chamber tank body and a fixing ring, wherein the fixing ring is fixedly installed at the lower part of the outer surface of the reaction chamber tank body, a support column is fixedly installed on the bottom surface of the fixing ring, a connecting base is fixedly installed on the bottom surface of the support column, and a placing mechanism is arranged inside the reaction chamber tank body;

[0007] The placement mechanism includes a placement unit and a rotation unit, and the placement unit includes a graphite disk body, a square groove, a substrate groove, a striped protrusion bar, a rectangular protrusion and a substrate. The graphite disk body is arranged in the lower part of the reaction chamber tank body, the square groove is opened on the upper surface of the graphite disk body, the substrate groove is opened on the inner bottom surface of the square groove, the striped protrusion bar is fixedly installed in sequence at equal intervals on the inner bottom surface of the substrate groove, the rectangular protrusion is installed on the upper surface of the striped protrusion bar, and the substrate is installed on the inner wall of the substrate groove.

[0008] Preferably, the rotating unit includes a supporting block, a connecting rod, a driving motor, a worm, a fixed round seat, a worm wheel, a connecting shaft and a support plate, the supporting block is fixedly installed on the upper surface of the connecting base, the connecting rod is fixedly installed on the upper surface of the connecting base, the driving motor is fixedly installed on the upper surface of the supporting block, the worm is fixedly installed on the output end of the driving motor, the fixed round seat is fixedly installed on the upper surface of the connecting base, the worm wheel is movably installed on the upper surface of the fixed round seat, the connecting shaft is fixedly installed on the upper surface of the worm wheel, and the support plate is fixedly installed on the upper surface of the connecting shaft.

[0009] Preferably, a cover plate is clamped on the upper surface of the reaction chamber tank body, a heat dissipation port is penetrated on the upper surface of the cover plate, a bottom plate is fixedly installed on the bottom surface of the reaction chamber tank body, a through hole is penetrated on the outer surface of the reaction chamber tank body, an air inlet pipe is fixedly installed on the left side of the through hole, and an air outlet pipe is fixedly installed on the right side of the through hole.

[0010] Preferably, a fixing rod is fixedly installed on the inner bottom surface of the cover plate, an electric heating lamp is fixedly installed on the bottom surface of the fixing rod, and a spiral electric heating tube is fixedly installed on the lower part of the inner wall of the reaction chamber tank body. The electric heating tube and the electric heating lamp provide a suitable heating temperature for the epitaxial growth of semiconductor materials.

[0011] Preferably, a hole is passed through the upper part of the connecting rod side, the outer surface of one end of the worm contacts the inner wall of the hole, the outer surface of the worm wheel is meshed with the outer surface of the worm, and the upper surface of the support plate is fixedly connected to the bottom surface of the graphite disk body.

[0012] Preferably, the height of the rectangular protrusion is 25-102 μm, the width is 0.6-1.6 mm, the length is 15-95 mm, the height of the striped protrusion is 6-56 μm, and the density of the striped protrusion is not less than 6 / cm 2 The striped protrusions are distributed obliquely and parallelly on the bottom surface of the substrate groove.

[0013] Preferably, the substrate grooves are opened in the bottom surface of the square groove in sequence at equal intervals, and the striped protrusions and rectangular protrusions are distributed in the substrate grooves in sequence at equal intervals.

[0014] Compared with the prior art, the beneficial effects of the utility model are:

[0015] 1. The semiconductor material epitaxial growth device with a graphite disk can generate electromagnetic waves to epitaxially grow the semiconductor material by fixing a fixing rod on the bottom surface of the cover plate and fixing an electric heating lamp on the bottom surface of the fixing rod, and cooperate with the air intake pipe to take in air to participate in the reaction. At the same time, the spiral electric heating tube installed in the lower part of the reaction chamber tank body performs high-temperature heating to provide a good reaction temperature and improve the operating efficiency.

[0016] 2. The semiconductor material epitaxial growth device with a graphite disk has a substrate groove formed in the bottom surface of a square groove formed on the upper surface of the graphite disk body, and a rectangular protrusion is arranged in the substrate groove to control the substrate in a fixed area for easy operation. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 This is a schematic diagram of the main structure of the utility model;

[0018] Figure 2 This is a schematic diagram of the graphite disc structure of the utility model;

[0019] Figure 3 for Figure 2 A schematic diagram of the local enlarged structure at point A in the middle;

[0020] Figure 4 This is a schematic diagram of the internal structure of the reaction chamber tank of the utility model.

[0021] In the figure: 1. reaction chamber tank body; 101. cover plate; 102. heat dissipation port; 103. bottom plate; 2. fixing ring; 201. support column; 202. connecting base; 3. supporting block; 301. connecting rod; 302. driving motor; 303. worm; 304. fixed round seat; 305. worm gear; 306. connecting shaft; 307. supporting plate; 308. graphite disk body; 309. square groove; 310. substrate groove; 311. striped raised strip; 312. rectangular raised block; 313. substrate; 314. through hole; 315. air inlet pipe; 316. air outlet pipe; 317. fixing rod; 318. electric heating lamp; 319. spiral electric heating tube. DETAILED DESCRIPTION

[0022] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0023] See also Figure 1-Figure 4 , the utility model provides a technical solution:

[0024] Embodiment 1: A semiconductor material epitaxial growth device with a graphite disk, comprising a reaction chamber tank body 1 and a fixing ring 2, wherein the fixing ring 2 is fixedly mounted on the lower part of the outer surface of the reaction chamber tank body 1, a supporting column 201 is fixedly mounted on the bottom surface of the fixing ring 2, a connecting base 202 is fixedly mounted on the bottom surface of the supporting column 201, and a placing mechanism is arranged inside the reaction chamber tank body 1;

[0025] The placement mechanism includes a placement unit and a rotation unit. The placement unit includes a graphite disk body 308, a square groove 309, a substrate groove 310, a stripe protrusion bar 311, a rectangular convex block 312 and a substrate 313. The graphite disk body 308 is arranged at the lower part of the reaction chamber tank body 1. The square groove 309 is opened on the upper surface of the graphite disk body 308. The substrate groove 310 is opened on the inner bottom surface of the square groove 309. The stripe protrusion bar 311 is fixedly installed on the inner bottom surface of the substrate groove 310 in an equidistant order. The rectangular convex block 312 is installed on the upper surface of the stripe protrusion bar 311. The substrate 313 is installed on the inner wall of the substrate groove 310. The height of the rectangular convex block 312 is 25-105um, the width is 0.6-1.6mm, and the length is 15-95mm. The height of the stripe protrusion bar 311 is 6-56μm, and the density of the stripe protrusion bar 311 is not less than 6 / cm 2 The striped raised strips 311 are distributed obliquely and parallelly on the bottom surface of the substrate groove 310. The substrate grooves 310 are opened in the bottom surface of the square groove 309 at equal intervals. The striped raised strips 311 and the rectangular protrusions 312 are distributed in the substrate groove 310 at equal intervals. By opening the substrate groove 310 on the bottom surface of the square groove 309 opened on the upper surface of the graphite disk body 308 and arranging the rectangular protrusions 312 in the substrate groove 310, the substrate 313 can be controlled in a fixed area for easy operation.

[0026] The rotating unit includes a supporting block 3, a connecting rod 301, a driving motor 302, a worm 303, a fixed round seat 304, a worm wheel 305, a connecting shaft 306 and a supporting plate 307. The supporting block 3 is fixedly mounted on the upper surface of the connecting base 202, the connecting rod 301 is fixedly mounted on the upper surface of the connecting base 202, the driving motor 302 is fixedly mounted on the upper surface of the supporting block 3, the worm 303 is fixedly mounted on the output end of the driving motor 302, and the fixed round seat 304 is fixedly mounted. On the upper surface of the connecting base 202, the worm wheel 305 is movably installed on the upper surface of the fixed round seat 304, the connecting shaft 306 is fixedly installed on the upper surface of the worm wheel 305, and the support plate 307 is fixedly installed on the upper surface of the connecting shaft 306. A hole passes through the upper part of the side of the connecting rod 301, and the outer surface of one end of the worm 303 contacts the inner wall of the hole. The outer surface of the worm wheel 305 is meshed with the outer surface of the worm 303, and the upper surface of the support plate 307 is fixedly connected to the bottom surface of the graphite disk body 308.

[0027] Working principle: Place the substrate on the upper surface of the striped raised strip 311 fixedly installed on the bottom surface of the substrate groove 310. The striped raised strip 311 can prevent the substrate 313 from slipping. The substrate 313 is limited in a fixed area by the rectangular protrusion 312 to increase the contact area with the graphite disk body 308 to avoid deformation of the epitaxial growth of the semiconductor material. When the semiconductor material is epitaxially grown, the power supply of the drive motor 302 is started to make the drive motor 302 work and drive the worm 303 to rotate, and the worm wheel 305 is driven to rotate through meshing, thereby driving the connecting shaft 306, the support plate 307 and the graphite disk body 308 to rotate for operation.

[0028] Embodiment 2: Based on embodiment 1, a cover plate 101 is clamped on the upper surface of the reaction chamber tank body 1, a heat dissipation port 102 is penetrated on the upper surface of the cover plate 101, a bottom plate 103 is fixedly installed on the bottom surface of the reaction chamber tank body 1, a through hole 314 is penetrated on the outer surface of the reaction chamber tank body 1, an air inlet pipe 315 is fixedly installed on the left side of the through hole 314, an air outlet pipe 316 is fixedly installed on the right side of the through hole 314, a fixing rod 317 is fixedly installed on the inner bottom surface of the cover plate 101, an electric heating lamp 318 is fixedly installed on the bottom surface of the fixing rod 317, and a spiral electric heating tube 319 is fixedly installed on the lower part of the inner wall of the reaction chamber tank body 1.

[0029] By fixing the fixing rod 317 on the bottom surface of the cover plate 101 and fixing the electric heating lamp 318 on the bottom surface of the fixing rod 317, electromagnetic waves can be irradiated to perform epitaxial growth of the semiconductor material and cooperate with the air intake pipe 315 to intake air to participate in the reaction. At the same time, the spiral electric heating tube 319 installed in the lower part of the reaction chamber tank body 1 performs high-temperature heating to provide a good reaction temperature and improve operating efficiency.

[0030] Working principle: the fixing rod 317 fixedly installed on the bottom surface of the cover plate 101 and the electric heating lamp 318 fixedly installed on the bottom surface are energized to generate electromagnetic waves to irradiate the semiconductor material. At the same time, the spiral electric heating tube 319 is energized to heat the graphite disk body 308 so that the semiconductor material reaches a suitable temperature during epitaxial growth. Air is taken in through the air inlet pipe 315 to participate in the epitaxial growth reaction and is discharged from the air outlet pipe 316. The heat dissipation port 102 running through the upper surface of the cover plate 101 dissipates heat inside the reaction chamber tank body 1.

[0031] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the statement "comprise a ..." do not exclude the presence of other identical elements in the process, method, article or device including the elements.

Claims

1. A semiconductor material epitaxial growth device with a graphite disk, comprising a reaction chamber tank body (1) and a fixing ring (2), wherein the fixing ring (2) is fixedly mounted on the lower part of the outer surface of the reaction chamber tank body (1), a support column (201) is fixedly mounted on the bottom surface of the fixing ring (2), and a connecting base (202) is fixedly mounted on the bottom surface of the support column (201), characterized in that: A placement mechanism is provided inside the reaction chamber tank body (1); The placement mechanism comprises a placement unit and a rotation unit. The placement unit comprises a graphite disk body (308), a square groove (309), a substrate groove (310), a striped protrusion (311), a rectangular protrusion (312) and a substrate (313). The graphite disk body (308) is arranged at the lower part of the reaction chamber tank body (1). The square groove (309) is opened on the upper surface of the graphite disk body (308). The substrate groove (310) is opened on the inner bottom surface of the square groove (309). The striped protrusion (311) is fixedly installed in sequence at equal intervals on the inner bottom surface of the substrate groove (310). The rectangular protrusion (312) is installed on the upper surface of the striped protrusion (311). The substrate (313) is installed on the inner wall of the substrate groove (310).

2. The semiconductor material epitaxial growth device with a graphite disk according to claim 1, characterized in that: The rotating unit comprises a supporting block (3), a connecting rod (301), a driving motor (302), a worm (303), a fixed round seat (304), a worm wheel (305), a connecting shaft (306) and a supporting plate (307); the supporting block (3) is fixedly mounted on the upper surface of the connecting base (202); the connecting rod (301) is fixedly mounted on the upper surface of the connecting base (202); the driving motor (302) is fixedly mounted on the upper surface of the supporting block (3); the worm (303) is fixedly mounted on the output end of the driving motor (302); the fixed round seat (304) is fixedly mounted on the upper surface of the connecting base (202); the worm wheel (305) is movably mounted on the upper surface of the fixed round seat (304); the connecting shaft (306) is fixedly mounted on the upper surface of the worm wheel (305); and the supporting plate (307) is fixedly mounted on the upper surface of the connecting shaft (306).

3. The semiconductor material epitaxial growth device with a graphite disk according to claim 1, characterized in that: The upper surface of the reaction chamber tank body (1) is clamped with a cover plate (101), the upper surface of the cover plate (101) is penetrated with a heat dissipation port (102), the bottom surface of the reaction chamber tank body (1) is fixedly mounted with a bottom plate (103), the outer surface of the reaction chamber tank body (1) is penetrated with a through hole (314), an air inlet pipe (315) is fixedly mounted on the left side of the through hole (314), and an air outlet pipe (316) is fixedly mounted on the right side of the through hole (314).

4. The semiconductor material epitaxial growth device with a graphite disk according to claim 3, characterized in that: A fixing rod (317) is fixedly mounted on the inner bottom surface of the cover plate (101), an electric heating lamp (318) is fixedly mounted on the bottom surface of the fixing rod (317), and a spiral electric heating tube (319) is fixedly mounted on the lower part of the inner wall of the reaction chamber tank body (1).

5. The semiconductor material epitaxial growth device with a graphite disk according to claim 2, characterized in that: A hole is penetrated through the upper part of the side of the connecting rod (301), the outer surface of one end of the worm (303) contacts the inner wall of the hole, the outer surface of the worm wheel (305) is meshed with the outer surface of the worm (303), and the upper surface of the support plate (307) is fixedly connected to the bottom surface of the graphite disk body (308).

6. The semiconductor material epitaxial growth device with a graphite disk according to claim 1, characterized in that: The rectangular protrusion (312) has a height of 25-105 μm, a width of 0.6-1.6 mm, and a length of 15-95 mm. The height of the striped protrusion (311) is 6-56 μm, and the density of the striped protrusion (311) is not less than 6 / cm 2 The striped protrusions (311) are distributed in an obliquely parallel manner on the inner bottom surface of the substrate groove (310).

7. The semiconductor material epitaxial growth device with a graphite disk according to claim 1, characterized in that: The substrate grooves (310) are opened in the inner bottom surface of the square groove (309) at equal intervals and in sequence, and the striped protrusions (311) and the rectangular protrusions (312) are distributed in the substrate grooves (310) at equal intervals and in sequence.

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