Supply system of gas-phase reactant and thin film deposition equipment

Abstract

The utility model provides a gas-phase reactant supply system and thin film deposition equipment. The gas-phase reactant supply system comprises a first supply module and a first purging module. The first supply module is used for providing a gas-phase first reactant for the process chamber. The first purging module comprises a first purging air source, a first storage tank and at least one second storage tank. The first purge gas source is connected with the first storage tank and the gas inlet of the at least one second storage tank so as to input first purge gas into the first storage tank and the gas inlet of the at least one second storage tank. A gas outlet of the first storage tank is connected with the process chamber so as to provide first purging gas with preset first gas pressure for the process chamber; the gas outlet of the at least one second storage tank is connected with the gas inlet of the first storage tank, so that when the actual gas pressure in the first storage tank is lower than the first gas pressure, supplemented first purging gas is provided for the first storage tank.

Description

Technical Field

[0001] The utility model relates to the field of semiconductor device processing, in particular to a supply system of gas phase reactants and a thin film deposition device. Background Art

[0002] In the Dynamic Random Access Memory (DRAM) process, the thin film deposition process needs to be carried out on a structure with a high aspect ratio. At present, a storage tank structure is generally used to ensure that the deposited film has excellent step coverage. Therefore, it is very important to maintain the high pressure of the storage tank and keep the pressure stable during the deposition process for the quality of the film. However, in the existing thin film deposition equipment, only one storage tank is set to provide the reaction gas and the purge gas, which not only affects the purge capacity, but also has a certain effect on the uniformity of the deposited film. In addition, in order to maintain the high pressure of the storage tank, a large flow of reaction gas or purge gas needs to be provided to the storage tank, resulting in a waste of resources.

[0003] In order to overcome the above-mentioned defects of the prior art, the art urgently needs an improved gas-phase reactant supply system for saving reaction gas or purge gas while ensuring a stable high pressure in the storage tank during the reaction or purge process, so as to improve the uniformity of film formation and shorten the purge time. Utility Model Content

[0004] A brief summary of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceived aspects, and is neither intended to identify the key or decisive elements of all aspects nor to define the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form as a prelude to a more detailed description that will be given later.

[0005] In order to overcome the above-mentioned defects of the prior art, the utility model provides a gas-phase reactant and a thin film deposition equipment. By arranging double-tank storage and introducing inert gas into the storage tank, the stable high pressure of the storage tank is ensured during the reaction or purge process while saving reaction gas or purge gas, so as to improve the uniformity of film formation and shorten the purge time.

[0006] Specifically, the supply system of the gas-phase reactant provided according to the first aspect of the utility model includes a first supply module and a first purge module. The first supply module is used to provide a gas-phase first reactant to the process chamber. The first purge module includes a first purge gas source, a first storage tank and at least one second storage tank. The first purge gas source is connected to the air inlet of the first storage tank and the at least one second storage tank to input the first purge gas therein. The air outlet of the first storage tank is connected to the process chamber to provide the first purge gas at a preset first air pressure thereto. The air outlet of the at least one second storage tank is connected to the air inlet of the first storage tank to provide the first storage tank with a supplementary first purge gas when the actual air pressure in the first storage tank is lower than the first air pressure.

[0007] Further, in some embodiments of the utility model, the first supply module includes a first reaction source, a first dilution gas source and a third storage tank. The first reaction source is used to provide the first reactant in the gas phase. The first dilution gas source is used to provide the first dilution gas. The gas inlet of the third storage tank is connected to the first reaction source and the first dilution gas source, and the gas outlet thereof is connected to the process chamber, and is used to obtain the first reactant in the gas phase from the first reaction source, and obtain the first dilution gas from the first dilution gas source, so as to provide the first mixed gas of a preset second pressure to the process chamber.

[0008] Furthermore, in some embodiments of the present invention, the first reaction source includes a carrier gas source and a liquid storage tank of the first reactant in liquid phase. The carrier gas source inputs carrier gas into the liquid storage tank to provide the third storage tank with carrier gas carrying the first reactant in gas phase.

[0009] Furthermore, in some embodiments of the present invention, the first reaction source further comprises a heating jacket, which covers and heats the liquid storage tank to evaporate the first liquid reactant to obtain the first gaseous reactant.

[0010] Furthermore, in some embodiments of the utility model, it also includes: a first valve and a first flow regulating mechanism and / or a second valve and a second flow regulating mechanism and / or a third valve and a third flow regulating mechanism. The first valve and the first flow regulating mechanism are arranged between the first purge gas source and the first storage tank and the at least one second storage tank, and are used to control the flow rate of the first purge gas input from the first purge gas source to the first storage tank and the at least one second storage tank. The second valve and the second flow regulating mechanism are arranged between the first reaction source and the third storage tank, and are used to control the flow rate of the first reactant input from the first reaction source to the third storage tank. The third valve and the third flow regulating mechanism are arranged between the first dilution gas source and the third storage tank, and are used to control the flow rate of the first dilution gas input from the first dilution gas source to the third storage tank.

[0011] Furthermore, in some embodiments of the utility model, a second supply module and a second purge module are also included. The second supply module is used to provide a second reactant in a gas phase to the process chamber. The second purge module includes a second purge gas source, a fourth storage tank and at least one fifth storage tank. The second purge gas source is connected to the gas inlet of the fourth storage tank and the at least one fifth storage tank to input the second purge gas therein. The gas outlet of the fourth storage tank is connected to the process chamber to provide the second purge gas at a preset third air pressure thereto. The gas outlet of the at least one fifth storage tank is connected to the gas inlet of the fourth storage tank to provide the fourth storage tank with a supplementary second purge gas when the actual air pressure in the fourth storage tank is lower than the third air pressure.

[0012] Further, in some embodiments of the present invention, the second supply module includes a second reaction source, a second dilution gas source and a sixth storage tank. The second reaction source is used to provide the second reactant in the gas phase. The second dilution gas source is used to provide a second dilution gas. The gas inlet of the sixth storage tank is connected to the second reaction source and the second dilution gas source, and the gas outlet thereof is connected to the process chamber, and is used to obtain the second reactant in the gas phase from the second reaction source, and obtain the second dilution gas from the second dilution gas source, so as to provide the second mixed gas of a preset fourth gas pressure to the process chamber.

[0013] Furthermore, in some embodiments of the present invention, a fourth valve and a fourth flow regulating mechanism and / or a fifth valve and a fifth flow regulating mechanism and / or a sixth valve and a sixth flow regulating mechanism are also included. The fourth valve and the fourth flow regulating mechanism are arranged between the second purge gas source and the fourth storage tank and the at least one fifth storage tank, and are used to control the flow rate of the second purge gas input from the second purge gas source to the fourth storage tank and the at least one fifth storage tank. The fifth valve and the fifth flow regulating mechanism are arranged between the second reaction source and the sixth storage tank, and are used to control the flow rate of the second reactant input from the second reaction source to the sixth storage tank. The sixth valve and the sixth flow regulating mechanism are arranged between the second dilution gas source and the sixth storage tank, and are used to control the flow rate of the second dilution gas input from the second dilution gas source to the sixth storage tank.

[0014] Further, in some embodiments of the present invention, the first reaction source includes TiCl 4 The second reaction source includes NH 3 The first purge gas source and the second purge gas source are selected from at least one of a nitrogen source, a helium source, and an argon source. The first purge gas and the second purge gas are selected from at least one of a nitrogen source, a helium source, and an argon source.

[0015] In addition, the above-mentioned thin film deposition equipment provided according to the second aspect of the utility model includes a supply system and a process chamber of the gas phase reactant provided in the first aspect of the utility model. The process chamber is used to carry a wafer and perform a thin film deposition process on it using at least one gas phase reactant provided by the supply system. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0017] Figure 1 A schematic structural diagram of a gas transmission system provided according to some embodiments of the utility model is shown.

[0018] Figure 2A A curve diagram showing the change of pressure in a storage tank over time in a dual storage tank structure provided according to some embodiments of the present utility model is shown.

[0019] Figure 2B A curve diagram showing the change of pressure in a storage tank over time in a single storage tank structure provided according to some embodiments of the present utility model is shown.

[0020] Reference numerals:

[0021] 10 Process Chamber

[0022] 11 First purge module

[0023] 112 First Storage Tank

[0024] 113 Second storage tank

[0025] 114 first valve and first flow regulating mechanism

[0026] 1211 Carrier gas source

[0027] 1212 Liquid Storage Tank

[0028] 122 First dilution gas source

[0029] 123 Third Storage Tank

[0030] 124 Second valve and second flow regulating mechanism

[0031] 125 The third valve and the third flow regulating mechanism

[0032] 13 Second purge module

[0033] 132 Fourth Storage Tank

[0034] 133 Fifth Storage Tank

[0035] 134 Fourth valve and fourth flow regulating mechanism

[0036] 141 Second Reaction Source

[0037] 142 Second dilution gas source

[0038] 143 Sixth Storage Tank

[0039] 144 Fifth valve and fifth flow regulating mechanism

[0040] 145 Sixth valve and sixth flow regulating mechanism DETAILED DESCRIPTION

[0041] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and functions of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this utility model are limited to this implementation. On the contrary, the purpose of introducing the utility model in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present utility model. In order to provide an in-depth understanding of the present utility model, the following description will include many specific details. The present utility model can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present utility model, some specific details will be omitted in the description.

[0042] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0043] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0044] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as the second component, region, layer and / or part without departing from some embodiments of the present invention.

[0045] As mentioned above, a storage tank structure is currently commonly used to ensure that the deposited film has excellent step coverage. Therefore, it is very important to maintain the high pressure of the storage tank and keep the pressure stable during the deposition process for the quality of the film. However, in the existing thin film deposition equipment, only one storage tank is set to provide the reaction gas and the purge gas, which not only affects the purge capacity, but also has a certain impact on the uniformity of the deposited film. In addition, in order to maintain the high pressure of the storage tank, a large flow of reaction gas needs to be provided, resulting in a waste of resources.

[0046] In order to overcome the above-mentioned defects of the prior art, the utility model provides a supply system for gas-phase reactants and a thin film deposition equipment. By arranging double tank storage and introducing inert gas into the storage tank, while saving reaction gas or purge gas, the stable high pressure of the storage tank is guaranteed during the reaction or purge process, so as to improve the uniformity of film formation and shorten the purge time.

[0047] In some non-limiting embodiments, the supply system of the gas phase reactant provided in the first aspect of the present invention can be configured in the thin film deposition device provided in the second aspect of the present invention for implementation. Specifically, the thin film deposition device provided in the second aspect of the present invention also includes a process chamber. The process chamber is used to carry a wafer and perform a thin film deposition process on it using at least one gas phase reactant provided by the supply system.

[0048] Please refer to the reference for details Figure 1 , Figure 1 A schematic structural diagram of a gas transmission system provided according to some embodiments of the utility model is shown.

[0049] exist Figure 1 In the illustrated embodiment, the supply system of the gas-phase reactant provided by the first aspect of the utility model includes a first supply module and a first purge module 11. The first supply module is used to provide the first reactant in the gas phase to the process chamber. The first purge module 11 includes a first purge gas source 111, a first storage tank 112 and at least one second storage tank 113. Here, the first purge gas source 111 is connected to the gas inlet of the first storage tank 112 and the at least one second storage tank 113 to input the first purge gas therein. The gas outlet of the first storage tank 112 is connected to the process chamber 10 to provide the first purge gas at a preset first pressure thereto. The gas outlet of at least one second storage tank 113 is connected to the gas inlet of the first storage tank 112 to provide the first storage tank 112 with a supplementary first purge gas when the actual gas pressure in the first storage tank 112 is lower than the first pressure. As a result, the gas pressure in the first storage tank 112 can be substantially stabilized at the first pressure to provide a stable purge gas to purge the pipeline and increase the purge speed.

[0050] Further, the first supply module includes a first reaction source, a first dilution gas source 122 and a third storage tank 123. The first reaction source is used to provide a first reactant in gas phase. The first dilution gas source 122 is used to provide a first dilution gas. The third storage tank 123 has an air inlet connected to the first reaction source and the first dilution gas source 122, and an air outlet connected to the process chamber 10, and is used to obtain the first reactant in gas phase from the first reaction source, and obtain the first dilution gas from the first dilution gas source 122, so as to provide the first mixed gas of a preset second pressure to the process chamber 10. As a result, the air pressure in the third storage tank 123 can be basically stabilized at the second pressure required for the thin film deposition process to improve the uniformity of film formation.

[0051] Here, the first reaction source includes a carrier gas source 1211 and a liquid storage tank 1212 of a first liquid reactant. The carrier gas source 1211 inputs carrier gas to the storage tank 1212 to provide the third storage tank 123 with the carrier gas carrying the first gaseous reactant.

[0052] In addition, in some embodiments, the first reaction source preferably further comprises a heating jacket, which covers and heats the liquid storage tank 1212 to evaporate the first reactant in the liquid phase to obtain the first reactant in the gas phase.

[0053] In addition, in some embodiments, the supply system of the gas phase reactant provided by the first aspect of the present invention preferably further includes a first valve and a first flow regulating mechanism 114 and / or a second valve and a second flow regulating mechanism 124 and / or a third valve and a third flow regulating mechanism 125. The first valve and the first flow regulating mechanism 114 are arranged between the first purge gas source 111 and the first storage tank 112 and at least one second storage tank 113, and are used to control the flow rate of the first purge gas input from the first purge gas source 111 to the first storage tank 112 and at least one second storage tank 113. The second valve and the second flow regulating mechanism 124 are arranged between the first reaction source and the third storage tank 123, and are used to control the flow rate of the first reactant input from the first reaction source to the third storage tank 123. The third valve and the third flow regulating mechanism 125 are arranged between the first dilution gas source 122 and the third storage tank 123, and are used to control the flow rate of the first dilution gas input from the first dilution gas source 122 to the third storage tank 123.

[0054] In addition, the supply system of the gas-phase reactant provided in the first aspect of the utility model may also optionally include a second supply module and a second purge module 13. The second supply module is used to provide a gaseous second reactant to the process chamber 10. The second purge module 13 includes a second purge gas source 131, a fourth storage tank 132 and at least one fifth storage tank 133. Here, the second purge gas source 131 is connected to the gas inlet of the fourth storage tank 132 and at least one fifth storage tank 133 to input the second purge gas therein. The gas outlet of the fourth storage tank 132 is connected to the process chamber 10 to provide the second purge gas of the preset third gas pressure thereto. The gas outlet of at least one fifth storage tank 133 is connected to the gas inlet of the fourth storage tank 132 to provide the fourth storage tank 132 with a supplementary second purge gas when the actual gas pressure in the fourth storage tank 132 is lower than the third gas pressure. Thus, the gas pressure in the fourth storage tank 132 can be basically stabilized at the third gas pressure to provide stable purge gas to purge the pipeline and increase the purge speed.

[0055] Further, the second supply module includes a second reaction source 141, a second dilution gas source 142 and a sixth storage tank 143. The second reaction source 141 is used to provide a second reactant in gas phase. The second dilution gas source 142 is used to provide a second dilution gas. The gas inlet of the sixth storage tank 143 is connected to the second reaction source 141 and the second dilution gas source 142, and the gas outlet thereof is connected to the process chamber 10, and is used to obtain the second reactant in gas phase from the second reaction source 141, and obtain the second dilution gas from the second dilution gas source 142, so as to provide the second mixed gas of a preset fourth gas pressure to the process chamber 10. Thus, the gas pressure in the sixth storage tank 143 can be basically stabilized at the fourth gas pressure required for the thin film deposition process to improve the uniformity of film formation.

[0056] In addition, in some embodiments, the supply system of the gas-phase reactant provided in the first aspect of the present invention preferably further includes a fourth valve and a fourth flow regulating mechanism 134 and / or a fifth valve and a fifth flow regulating mechanism 144 and / or a sixth valve and a sixth flow regulating mechanism 145. The fourth valve and the fourth flow regulating mechanism 134 are arranged between the second purge gas source 131 and the fourth storage tank 132 and at least one fifth storage tank 133, and are used to control the flow rate of the second purge gas input from the second purge gas source 131 to the fourth storage tank 132 and at least one fifth storage tank 133. The fifth valve and the fifth flow regulating mechanism 144 are arranged between the second reaction source 141 and the sixth storage tank 143, and are used to control the flow rate of the second reactant input from the second reaction source 141 to the sixth storage tank 143. The sixth valve and the sixth flow regulating mechanism 145 are arranged between the second dilution gas source 142 and the sixth storage tank 143, and are used to control the flow rate of the second dilution gas input from the second dilution gas source 142 to the sixth storage tank 143.

[0057] Here, the first reaction source includes TiCl 4 The second reaction source includes NH 3 Gas source: The first purge gas source 111 and the second purge gas source 131 are selected from at least one of a nitrogen source, a helium source, and an argon source, and the first purge gas and the second purge gas are selected from at least one of nitrogen, helium, and argon.

[0058] Please refer to Figure 2A and Figure 2B , Figure 2A A curve diagram showing the change of the pressure in the storage tank over time in the double storage tank structure provided according to some embodiments of the utility model is shown. Figure 2B A curve diagram showing the change of pressure in a storage tank over time in a single storage tank structure provided according to some embodiments of the present utility model is shown.

[0059] like Figure 2A and Figure 2B As shown, the pressure in the storage tank in the dual storage tank structure and the pressure in the single storage tank are monitored. When the pulse time and peak pressure are the same, the lowest pressure value in the storage tank in the dual storage tank structure is much higher than the lowest pressure value in the single storage tank. Therefore, during the thin film deposition process, the pressure in the storage tank in the dual storage tank structure is higher and the gas flow rate is faster. Therefore, the purge effect of the dual storage tank structure is better, and the purge time can be further shortened to increase production capacity.

[0060] In summary, the above-mentioned gas-phase reactant supply system and thin film deposition equipment provided by the utility model can save reaction gas or purge gas while ensuring stable high pressure of the storage tank during the reaction or purge process by arranging double tank storage and introducing inert gas into the storage tank, so as to improve the uniformity of film formation and shorten the purge time.

[0061] Although the above methods are illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or concurrently with other actions from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art.

[0062] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A gas phase reactant supply system, characterized in that: include: A first supply module, used for providing a first reactant in a gas phase to the process chamber; as well as The first purge module comprises: a first purge gas source, a first storage tank and at least one second storage tank, wherein the first purge gas source is connected to the gas inlets of the first storage tank and the at least one second storage tank to input the first purge gas therein, the gas outlet of the first storage tank is connected to the process chamber to provide the first purge gas at a preset first air pressure thereto, and the gas outlet of the at least one second storage tank is connected to the gas inlet of the first storage tank to provide the first storage tank with supplementary first purge gas when the actual air pressure in the first storage tank is lower than the first air pressure.

2. The supply system according to claim 1, characterized in that The first supply module comprises: A first reaction source, used to provide the first reactant in the gas phase; A first dilution gas source, used to provide a first dilution gas; and A third storage tank, whose gas inlet is connected to the first reaction source and the first dilution gas source, and whose gas outlet is connected to the process chamber, is used to obtain the first reactant in the gas phase from the first reaction source and obtain the first dilution gas from the first dilution gas source to provide the first mixed gas at a preset second pressure to the process chamber.

3. The supply system according to claim 2, characterized in that The first reaction source includes a carrier gas source and a liquid storage tank for a liquid-phase first reactant. The carrier gas source inputs carrier gas into the liquid storage tank to provide the third storage tank with carrier gas carrying the gas-phase first reactant.

4. The supply system according to claim 3, characterized in that The first reaction source further includes a heating jacket, wherein the heating jacket covers and heats the liquid storage tank to evaporate the first liquid reactant to obtain the first gaseous reactant.

5. The supply system according to claim 4, characterized in that Also includes: A first valve and a first flow regulating mechanism are provided between the first purge gas source and the first storage tank and the at least one second storage tank, and are used to control the flow rate of the first purge gas inputted from the first purge gas source to the first storage tank and the at least one second storage tank, and / or The second valve and the second flow regulating mechanism are disposed between the first reaction source and the third storage tank, and are used to control the flow rate of the first reactant input from the first reaction source to the third storage tank, and / or The third valve and the third flow regulating mechanism are disposed between the first dilution gas source and the third storage tank, and are used to control the flow rate of the first dilution gas input from the first dilution gas source to the third storage tank.

6. The supply system according to claim 2, characterized in that: Also includes: A second supply module, used for providing a second reactant in a gas phase to the process chamber; as well as The second purge module includes: a second purge gas source, a fourth storage tank and at least one fifth storage tank, wherein the second purge gas source is connected to the gas inlets of the fourth storage tank and the at least one fifth storage tank to input the second purge gas therein, the gas outlet of the fourth storage tank is connected to the process chamber to provide the second purge gas at a preset third air pressure thereto, and the gas outlet of the at least one fifth storage tank is connected to the gas inlet of the fourth storage tank to provide the fourth storage tank with a supplementary second purge gas when the actual air pressure in the fourth storage tank is lower than the third air pressure.

7. The supply system according to claim 6, characterized in that The second supply module comprises: A second reaction source, used to provide the second reactant in the gas phase; A second dilution gas source, used for providing a second dilution gas; and A sixth storage tank, whose gas inlet is connected to the second reaction source and the second dilution gas source, and whose gas outlet is connected to the process chamber, is used to obtain the second reactant in the gas phase from the second reaction source and obtain the second dilution gas from the second dilution gas source to provide the second mixed gas with a preset fourth pressure to the process chamber.

8. The supply system according to claim 7, characterized in that Also includes: a fourth valve and a fourth flow regulating mechanism, disposed between the second purge gas source and the fourth storage tank and the at least one fifth storage tank, for controlling the flow rate of the second purge gas input from the second purge gas source to the fourth storage tank and the at least one fifth storage tank, and / or a fifth valve and a fifth flow regulating mechanism, disposed between the second reaction source and the sixth storage tank, for controlling the flow rate of the second reactant input from the second reaction source to the sixth storage tank, and / or The sixth valve and the sixth flow regulating mechanism are disposed between the second dilution gas source and the sixth storage tank, and are used to control the flow rate of the second dilution gas input from the second dilution gas source to the sixth storage tank.

9. The supply system according to claim 7, characterized in that: The first reaction source includes a TiCl4 liquid storage tank, the second reaction source includes an NH3 gas source, and / or The first purge gas source and the second purge gas source are selected from a nitrogen source, a helium source or an argon source, and the first purge gas and the second purge gas are selected from nitrogen, helium or argon.

10. A thin film deposition device, characterized in that: include: The supply system for gas phase reactants according to any one of claims 1 to 9; as well as The process chamber is used to carry the wafer and perform a thin film deposition process on the wafer using at least one gas-phase reactant provided by the supply system.

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