Semiconductor process chamber and heating assembly thereof
By adjusting the light coverage area of the heating light source using a movable light distribution lens in the semiconductor process chamber, the problem of uneven wafer temperature is solved and the uniformity of the film layer is improved.
Patent Information
- Application Number
- CN202420290521.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-02-08
- Publication Date
- 2025-02-25
- Estimated Expiration
- 2034-02-08
AI Technical Summary
In the existing semiconductor process chamber, multiple heating light sources may cause uneven wafer temperature when heating the wafer, affecting the uniformity of the film layer.
Design a heating assembly of a semiconductor process chamber, including a first heating light source and a light distribution lens, which can move relative to the first heating light source to adjust the distance between it and the first heating light source to achieve the light coverage area The coverage area can be variable, thereby adjusting the temperature of the wafer.
By adjusting the light coverage area of the heating light source, the problem of uneven temperature on the wafer can be effectively reduced and the uniformity of the wafer surface film layer can be improved.
Smart Images
Figure CN222530378U_ABST
Abstract
Description
Technical Field
[0001] The present application belongs to the technical field of semiconductor process equipment, and specifically relates to a semiconductor process chamber and a heating component thereof. Background Art
[0002] After being processed, the wafer can be used to manufacture various components. In the art, the wafer is processed by using a semiconductor process chamber.
[0003] In the related art, a wafer carrier is provided in a semiconductor process chamber, and a plurality of heating light sources are arranged in an array on the top of the semiconductor process chamber, and the plurality of heating light sources are all facing the carrying surface of the wafer carrier. When processing the wafer, the wafer is placed on the carrying surface of the wafer carrier to drive the wafer to rotate. The wafer is heated by the energy radiated by the heating light source during rotation, thereby depositing a film layer on the wafer. However, when the plurality of heating light sources in the related art heat the wafer, uneven wafer temperature may be caused, which will affect the uniformity of the film layer deposited on the wafer. How to prevent the heating light source from causing uneven wafer temperature when heating the wafer is an urgent problem to be solved in this field. Utility Model Content
[0004] The purpose of the embodiments of the present application is to provide a semiconductor process chamber and a heating component thereof, which can solve the problem of uneven wafer temperature when the current heating light source heats the wafer.
[0005] In order to solve the above technical problems, this application is implemented as follows:
[0006] In a first aspect, an embodiment of the present application provides a heating component for a semiconductor process chamber, comprising a first heating light source and a light distribution lens, wherein the first heating light source is used to heat a wafer, the light distribution lens is disposed on the light output side of the first heating light source and can be directed toward a wafer carrier, and the light distribution lens can be moved relative to the first heating light source to approach or move away from the first heating light source.
[0007] In a second aspect, an embodiment of the present application provides a semiconductor process chamber, including a chamber body and the above-mentioned heating assembly, wherein a first heating light source and a light distribution lens are both disposed in the chamber body, and the light distribution lens can move relative to the chamber body.
[0008] In the embodiment of the present application, the heating component includes a first heating light source and a light distribution lens, and the light distribution lens can be moved relative to the first heating light source, which can make the light distribution lens close to or away from the first heating light source, so that the distance between the light distribution lens and the first heating light source, that is, the focal length, can be adjusted to achieve a variable coverage area of the light coverage area formed by the first heating light source on the wafer. When the heating component of the present application is specifically applied, when the temperature of a part of the wafer is too high, the light distribution lens can be moved relative to the first heating light source, so that the light coverage area of the first heating light source no longer covers the area of the wafer where the temperature is too high, so as to reduce the temperature of the area; when the temperature of a part of the wafer is too low, the light distribution lens can be moved relative to the first heating light source, so that the light coverage area of the first heating light source covers the area of the wafer where the temperature is too low, so as to increase the temperature of the area. It can be seen that the coverage area of the light coverage area of the first heating light source of the present application is variable, and the temperature of the wafer can be adjusted by adjusting the coverage area of the light coverage area, thereby improving the temperature uniformity of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS
[0009] Figure 1 A schematic diagram of the structure of a semiconductor process chamber disclosed in an embodiment of the present application;
[0010] Figure 2 A schematic diagram of a portion of the structure of a semiconductor process chamber disclosed in an embodiment of the present application;
[0011] Figure 3 A schematic diagram of the light coverage area of the first heating light source disclosed in an embodiment of the present application;
[0012] Figure 4 It is a schematic diagram of the total coverage area formed on the wafer by the light coverage area disclosed in the embodiment of the present application under the action of the rotation of the wafer.
[0013] Description of reference numerals:
[0014] 100-chamber body, 110-upper shell, 120-lower shell, 210-second heating light source, 301-light coverage area, 302-total coverage area, 310-first heating light source, 320-light distribution lens, 330-lens sleeve, 400-controller, 500-light-transmitting cover, 600-supporting shaft, 700-temperature detection device, 800-wafer carrying device, 900-wafer. DETAILED DESCRIPTION
[0015] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.
[0016] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.
[0017] The semiconductor process chamber and the heating component thereof provided in the embodiments of the present application are described in detail below through specific embodiments and their application scenarios in combination with the accompanying drawings.
[0018] In the related art, when each heating light source heats the wafer, the area formed on the wafer is the light coverage area. The light coverage area forms a total coverage area on the wafer under the rotation of the wafer. Each heating light source can heat the part of the wafer corresponding to the total coverage area. However, the coverage area of the light coverage area of the heating light source in the related art is not adjustable, which may cause the temperature of some areas on the wafer to be too high or too low, which will cause uneven temperature of the wafer.
[0019] like Figures 2 to 4As shown, an embodiment of the present application discloses a heating component of a semiconductor process chamber, including a first heating light source 310 and a light distribution lens 320. The first heating light source 310 is used to heat a wafer 900. Optionally, the first heating light source 310 can be directed toward the upper surface or the lower surface of the wafer 900. The light distribution lens 320 is arranged on the light output side of the first heating light source 310 and can be directed toward the wafer carrier 800. The light distribution lens 320 can move relative to the first heating light source 310 to approach or move away from the first heating light source 310. Optionally, one of the light distribution lens 320 and the first heating light source 310 may be fixedly arranged, and the other may be movably arranged, and the light distribution lens 320 can be moved relative to the first heating light source 310 by moving the other of the light distribution lens 320 and the first heating light source 310; or, both the light distribution lens 320 and the first heating light source 310 may be movably arranged, and in this case, the light distribution lens 320 can be moved relative to the first heating light source 310 by moving at least one of the light distribution lens 320 and the first heating light source 310, and the present application does not impose any restrictions on this.
[0020] In an embodiment of the present application, the heating component includes a first heating light source 310 and a light distribution lens 320. The light emitted by the first heating light source 310 can enter the light distribution lens 320, thereby forming a light coverage area 301 on the wafer 900. The light distribution lens 320 can move relative to the first heating light source 310, which can make the light distribution lens 320 close to or away from the first heating light source 310. In this way, the distance between the light distribution lens 320 and the first heating light source 310, that is, the focal length, can be adjusted to achieve variable coverage area of the light coverage area 301 of the first heating light source 310. When the heating assembly of the present application is specifically applied, in the case that the temperature of a part of the wafer 900 is too high, the light distribution lens 320 can be moved relative to the first heating light source 310, so that the light coverage area 301 of the first heating light source 310 no longer covers the area of the wafer 900 where the temperature is too high, so as to reduce the temperature of the area; in the case that the temperature of a part of the wafer 900 is too low, the light distribution lens 320 can be moved relative to the first heating light source 310, so that the light coverage area 301 of the first heating light source 310 covers the area of the wafer 900 where the temperature is too low, so as to increase the temperature of the area. It can be seen that the coverage area of the light coverage area 301 of the first heating light source 310 of the present application is variable, and the temperature of the wafer 900 can be adjusted by adjusting the coverage area of the light coverage area 301, thereby improving the temperature uniformity of the wafer 900.
[0021] It should be noted that the light distribution lens 320 has a light incident surface and a light exiting surface, and the first heating light source is arranged toward the light incident surface. The light distribution lens 320 of the present application can be configured as follows: a divergent light configuration from the light incident surface to the light exiting surface, that is, the maximum angle difference of the incident light incident from the light incident surface is less than the maximum angle difference of the outgoing light emitted from the light exiting surface; or the light distribution lens 320 can be configured as follows: a contracting light configuration from the light incident surface to the light exiting surface, that is, the maximum angle difference of the incident light incident from the light incident surface is greater than the maximum angle difference of the outgoing light emitted from the light exiting surface. The maximum angle difference of the incident light here is the angle difference between the two light rays with the largest angle difference among all the light rays incident from the light incident surface; the maximum angle difference of the outgoing light is the angle difference between the two light rays with the largest angle difference among all the light rays emitted from the light exiting surface, and the angles here can all be the angles formed between the light rays and the optical axis.
[0022] In an optional embodiment, the number of first heating light sources 310 and light distribution lenses 320 is at least two, each first heating light source 310 corresponds to each light distribution lens 320 one by one, and each first heating light source 310 can selectively heat the wafer 900, that is, each first heating light source 310 can work at the same time, or only a part of the first heating light sources 310 can work.
[0023] When each first heating light source 310 heats the wafer 900, the area formed on the wafer 900 is the light coverage area 301. When the light coverage area 301 of each first heating light source 310 is the largest, the light coverage area 301 forms a total coverage area 302 on the wafer 900 under the rotation of the wafer 900. The sum of the areas of the total coverage areas 302 corresponding to each first heating light source 310 is greater than or equal to the area of the wafer 900. In other words, the total coverage areas 302 of each first heating light source 310 together correspond to all areas of the entire wafer 900. Specifically, when the light coverage area 301 of each first heating light source 310 is the largest, the total coverage area 302 formed on the wafer 900 under the rotation of the wafer 900 is: the area obtained by rotating the light coverage area 301 around the central axis of the wafer carrier 800. It should be understood that the “light coverage area 301 of the first heating light source 310 is the largest” here means that the area of the light coverage area 301 of the first heating light source 310 is the largest. Optionally, the central axis of the wafer carrier 800 coincides with the central axis of the wafer 900; the shape of the light coverage area 301 of the first heating light source 310 can be circular, elliptical, polygonal, etc., and the present application does not limit the shape of the light coverage area 301 of the first heating light source 310.
[0024] In this embodiment, please refer to Figure 3 and Figure 4, each light coverage area 301 can only cover a local area on the wafer 900, but the wafer 900 will rotate during the deposition of the film layer, so each light coverage area 301 can respectively cover different circumferential areas in the radial direction of the wafer 900, and the different circumferential areas here refer to: each light coverage area 301 is respectively rotated around the central axis of the wafer carrier 800 to obtain each total coverage area 302, the sum of the areas of the total coverage areas 302 corresponding to each first heating light source 310 is greater than or equal to the area of the wafer 900, that is: each total coverage area 302 corresponds to all areas of the entire wafer 900, so that during the rotation of the wafer 900, each largest light coverage area 301 can heat the entire area of the wafer 900, thereby eliminating the heating dead angle of the first heating light source 310 on the wafer 900. Of course, this embodiment does not require that each first heating light source 310 must heat the wafer 900 at the same time to heat the entire area of the wafer 900. Instead, when each first heating light source 310 works simultaneously or at different times, the area after the superposition of each maximum light coverage area 301 can correspond to the entire area of the wafer 900, so that there is no area on the wafer 900 that cannot be heated.
[0025] See also Figure 3 , taking the number of the first heating light sources 310 and the light distribution lenses 320 as two, and the shape of the wafer 900 and the light coverage areas 301 of each first heating light source 310 being circular as an example, when the light coverage area 301 of each first heating light source 310 is the largest, the diameter of each light coverage area 301 is equal to one-quarter of the diameter of the wafer 900. At this time, the two opposite edges of the light coverage area 301 of one of the first heating light sources 310 can be extended to the edge of the wafer 900 and one-quarter of the diameter of the wafer 900, respectively, and the two opposite edges of the light coverage area 301 of the other first heating light source 310 can be extended to one-quarter of the diameter of the wafer 900 and one-half of the diameter of the wafer 900, respectively.
[0026] Optionally, when the light coverage area 301 of each first heating light source 310 is the largest, the edges of two adjacent light coverage areas 301 that are close to each other are in contact. Taking the light coverage area 301 of the first heating light source 310 as a circle as an example, the edges of two adjacent light coverage areas 301 that are close to each other are tangent, but this will make the distance between the two adjacent first heating light sources 310 closer, thereby increasing the thermal impact between the two adjacent first heating light sources 310. In an optional embodiment, when each first heating light source 310 can selectively heat the wafer 900 and the light coverage area 301 of each first heating light source 310 is the largest, there is a gap between the two adjacent light coverage areas 301, so that the distance between the two adjacent first heating light sources 310 can be increased, thereby reducing the thermal impact between the two adjacent first heating light sources 310.
[0027] Optionally, when each first heating light source 310 can selectively heat the wafer 900 and the light coverage area 301 of each first heating light source 310 is the largest, two adjacent total coverage areas 302 can overlap with each other, but this will make the heating temperature of the overlapping part between the two adjacent total coverage areas 302 higher, which is not convenient for controlling the temperature of the wafer 900. Therefore, in an optional embodiment, when each first heating light source 310 can selectively heat the wafer 900 and the light coverage area 301 of each first heating light source 310 is the largest, in any two adjacent total coverage areas 302, one of the total coverage areas 302 is located outside the other total coverage area 302, that is, any two adjacent light coverage areas 301 do not overlap with each other, which is convenient for controlling the temperature of the wafer 900.
[0028] In an optional embodiment, the heating assembly further includes a second heating light source 210, the second heating light source 210 can be directed toward the wafer carrier 800, and the frequency of the first heating light source 310 is greater than the frequency of the second heating light source 210. Optionally, the second heating light source 210 can be a halogen lamp; the first heating light source 310 can be a focused high-energy radiation source, such as a laser light source, and the first heating light source 310 can be a point light source or a line light source.
[0029] In this embodiment, the heating assembly further includes a second heating light source 210, which can be directed toward the wafer carrier 800. Therefore, when the wafer 900 is placed on the wafer carrier 800, both the first heating light source 310 and the second heating light source 210 can heat the wafer 900 placed on the wafer carrier 800, thereby improving the heating effect of the heating assembly on the wafer 900. Since the frequency of the first heating light source 310 is greater than the frequency of the second heating light source 210, the energy of the light emitted by the first heating light source 310 is higher, so that the temperature of the local area on the wafer 900 with a relatively low temperature can be quickly increased, thereby shortening the deposition time of the uneven film layer deposited on the area, and further ensuring the uniformity of the film layer deposited on the wafer 900.
[0030] Optionally, the number of the second heating light sources 210 may be multiple, and the multiple second heating light sources 210 are arranged in an array. The first heating light source 310 may be located between the multiple second heating light sources 210 arranged in an array, or may be located on one side of the multiple second heating light sources 210 arranged in an array. The present application does not limit the positional relationship between the second heating light source 210 and the first heating light source 310. It should be noted that the first heating light source 310 in the embodiment of the present application can be used to perform secondary heating on the wafer 900, that is, the second heating light source 210 is used to heat the entire area of the wafer 900. After the second heating light source 210 heats the entire area of the wafer 900, the first heating light source 310 heats the local area of the wafer 900; of course, the first heating light source 310 and the second heating light source 210 can also heat the wafer 900 at the same time, and the present application does not limit this.
[0031] In an optional embodiment, the heating assembly further includes a driving member, which is connected to the light distribution lens 320 to drive the light distribution lens 320 to move. In this embodiment, the driving member can drive the light distribution lens 320 to move closer to or away from the first heating light source 310, thereby adjusting the area of the light coverage area 301 of the first heating light source 310. Compared with the method of driving the light distribution lens 320 to move by hand, the driving member used in this embodiment to control the movement of the light distribution lens 320 is more convenient and accurate. The driving member here can be a component that can output driving force, such as a cylinder, an electric cylinder, or a motor.
[0032] In an optional embodiment, the heating assembly further includes a controller 400, and the first heating light source 310 and the driving member are both electrically connected to the controller 400 to adjust the light-emitting parameters of the first heating light source 310. In this embodiment, the controller 400 can control the driving member to drive the light distribution lens 320 to approach or move away from the first heating light source 310, thereby adjusting the area of the light coverage area 301 of the first heating light source 310, and the controller 400 can adjust the light-emitting parameters of the first heating light source 310, where the light-emitting parameters can be light intensity, the greater the light intensity, the higher the energy in the light, and the better the heating effect on the wafer 900; the magnitude of the light intensity here can be adjusted by adjusting the output power of the controller 400.
[0033] The specific operation process is as follows: after the film deposition is completed on the wafer 900, the luminous intensity of the first heating light source 310 and the output power of the controller 400 are inferred based on the uniformity of the film layer, combined with the sensitivity of the wafer 900 to the heating temperature, and the correspondence between the luminous intensity of the first heating light source 310 and the heating temperature, so as to accurately control the temperature of the wafer 900.
[0034] In order to prevent the light emitted by the second heating light source 210 from entering the light distribution lens 320 and affecting the temperature control of the wafer 900 by the first heating light source 310, in an optional embodiment, the heating assembly further includes a lens sleeve 330, the first heating light source 310 is sealedly connected to the first end of the lens sleeve 330, the light distribution lens 320 is disposed in the lens sleeve 330, and the second end of the lens sleeve 330 can face the wafer carrying device 800. In this embodiment, the first heating light source 310 is sealedly connected to the first end of the lens sleeve 330, and the light emitted by the first heating light source 310 can enter the lens sleeve 330 through the first end of the lens sleeve 330 and be emitted from the second end of the lens sleeve 330 to heat a local area of the wafer 900. In addition, the first heating light source 310 is sealed and connected to the first end of the lens sleeve 330, and the light distribution lens 320 is disposed in the lens sleeve 330. This can prevent the light emitted by the second heating light source 210 from entering the lens sleeve 330 through the first end of the lens sleeve 330, and further prevent the light emitted by the second heating light source 210 from entering the light distribution lens 320, so as to avoid affecting the temperature control of the wafer 900 by the first heating light source 310.
[0035] When this embodiment is combined with the technical solution of "the heating component also includes a driving member, and the driving member is connected to the light distribution lens 320", the light distribution lens 320 can be movably arranged in the lens sleeve 330; or the light distribution lens 320 can be fixed in the lens sleeve 330, and the driving member drives the lens sleeve 330 to move, thereby indirectly driving the light distribution lens 320 to move.
[0036] In order to prevent the light distribution lens 320 in the lens sleeve 330 from having a high temperature problem under the heat radiation of other heating light sources, such as the second heating light source 210, in an optional embodiment, a heat insulation interlayer is provided between the inner wall and the outer wall of the lens sleeve 330. Optionally, the heat insulation interlayer can be a vacuum layer or a heat insulation gas layer, and the gas in the heat insulation gas layer can be a gas with a low thermal conductivity coefficient, such as air; in addition, the heat insulation interlayer can also be a heat insulation board made of heat insulation materials such as glass fiber, asbestos, rock wool, silicate, etc. In this embodiment, the heat insulation interlayer between the inner wall and the outer wall of the lens sleeve 330 can prevent the heat in the light emitted by other heating light sources from radiating into the lens sleeve 330, thereby preventing the light distribution lens 320 in the lens sleeve 330 from having a high temperature problem under the heat radiation of other heating light sources, so as to extend the life of the light distribution lens 320.
[0037] In an optional embodiment, the reflectivity of the inner surface of the lens sleeve 330 is greater than 90%, and the inner surface of the lens sleeve 330 can reflect the light emitted by the first heating light source 310 to prevent it from transmitting out of the lens sleeve 330, thereby reducing the energy loss of the light emitted by the first heating light source 310 and improving the light utilization rate. Optionally, the inner surface of the lens sleeve 330 can be coated with a high reflectivity material to make its reflectivity greater than 90%, such as metal materials such as aluminum, gold, silver, or titanium dioxide nanomaterials.
[0038] And / or, in an optional embodiment, the reflectivity of the outer surface of the lens sleeve 330 is greater than 90%, so as to reflect the light emitted by other heating light sources, thereby reducing the temperature of the lens sleeve 330 and extending the life of the lens sleeve 330. Optionally, the outer surface of the lens sleeve 330 can be coated with a high reflectivity material to make its reflectivity greater than 90%, such as a metal material such as aluminum, gold, silver, or a titanium dioxide nanomaterial.
[0039] like Figure 1 As shown, an embodiment of the present application also discloses a semiconductor process chamber, including a chamber body 100 and a heating assembly as described in any of the above embodiments, wherein a first heating light source 310 and a light distribution lens 320 are both disposed in the chamber body, and the light distribution lens can move relative to the chamber body 100.
[0040] Optionally, the first heating light source 310 may be disposed at the bottom of the chamber body 100, in which case the first heating light source 310 may face the lower surface of the wafer carrier 800, and the first heating light source 310 may indirectly heat the wafer 900 by heating the wafer carrier 800; the first heating light source 310 may also be disposed at the top of the chamber body 100, in which case the first heating light source 310 may face the upper surface of the wafer carrier 800, and after the wafer 900 is disposed on the wafer carrier 800, the first heating light source 310 may directly heat the wafer 900. It should be noted that, when the number of the first heating light sources 310 is at least two, each of the first heating light sources 310 may be disposed at the top of the chamber body 100 or the bottom of the chamber body 100, or a portion of the first heating light sources 310 may be disposed at the top of the chamber body 100, and another portion of the first heating light sources 310 may be disposed at the bottom of the chamber body 100.
[0041] When the heating component also includes a second heating light source 210, optionally, the number of the second heating light sources 210 can be one group, which can be arranged at the top or bottom of the chamber body 100. In order to improve the heating effect of the second heating light sources 210 on the wafer 900, in some embodiments, the number of the second heating light sources 210 can be two groups, each group of second heating light sources 210 includes a plurality of second heating light sources 210 arranged in an array, and the two groups of second heating light sources 210 are respectively arranged at the top and bottom of the chamber body 100.
[0042] Since the semiconductor process chamber of the present application includes the above-mentioned heating component, the semiconductor process chamber of the present application also has the technical effects of the heating component in the embodiment, which will not be described in detail in the present application.
[0043] Optionally, the chamber body 100 includes an upper shell 110 and a lower shell 120 that are detachably connected to facilitate installation of various components in the chamber body 100 .
[0044] Optionally, a wafer carrier 800 is provided in the chamber body 100, and the bottom of the wafer carrier 800 can be connected to the supporting shaft 600, and the wafer carrier 800 and the wafer 900 can be driven to rotate by driving the supporting shaft 600 to rotate; the wafer carrier 800 can be made of materials with excellent heat conduction and heat absorption properties such as silicon carbide or graphite coated with silicon carbide, so as to absorb the radiant heat from the first heating light source 310 and / or the second heating light source 210, and transfer the radiant heat to the wafer 900, thereby heating the wafer 900. Further, the outer sealing sleeve of the wafer carrier 800 is provided with a light-transmitting cover 500, so that the wafer carrier 800 is located in a closed environment, and the light-transmitting cover 500 can be made of quartz.
[0045] Optionally, a temperature detection device 700 is provided in the middle of the top surface of the chamber body 100, and the temperature detection device 700 is used to detect the temperature of the central area of the wafer 900. The temperature detected by the temperature detection device 700 can be used as temperature control feedback to achieve consistent temperature in the chamber body 100 during multiple heat treatments.
[0046] In an optional embodiment, the first heating light source 310 is arranged in a vertical direction, so that the path for the light emitted by the first heating light source 310 to reach the wafer 900 can be as short as possible to reduce energy loss; and the lateral dimension occupied by the first heating light source 310 when arranged in the vertical direction is minimized, so that the lateral layout space for other heating light sources, such as the first heating light source 310, can be increased.
[0047] The above embodiments of the present application focus on the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. Considering the simplicity of the text, they will not be repeated here. The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the enlightenment of the present application, ordinary technicians in this field can also make many forms without departing from the scope of protection of the purpose of the present application and the claims, all of which are within the protection of the present application.
Claims
1. A heating assembly for a semiconductor process chamber, characterized in that: The invention comprises a first heating light source (310) and a light distribution lens (320), wherein the first heating light source (310) is used to heat a wafer (900), the light distribution lens (320) is arranged on the light output side of the first heating light source (310) and can be directed toward a wafer supporting device (800), and the light distribution lens (320) can be moved relative to the first heating light source (310) to be close to or away from the first heating light source (310).
2. The heating assembly according to claim 1, characterized in that The heating component further comprises a driving member, which is connected to the light distribution lens (320) so as to drive the light distribution lens (320) to move.
3. The heating assembly according to claim 2, characterized in that The heating component further comprises a controller (400), and the first heating light source (310) and the driving member are both electrically connected to the controller (400) to adjust the light emission parameters of the first heating light source (310).
4. The heating assembly according to claim 1, characterized in that The heating assembly further comprises a lens sleeve (330), the first heating light source (310) is sealedly connected to a first end of the lens sleeve (330), the light distribution lens (320) is disposed in the lens sleeve (330), and the second end of the lens sleeve (330) can face the wafer carrying device (800).
5. The heating assembly according to claim 4, characterized in that A heat insulating interlayer is provided between the inner wall and the outer wall of the lens sleeve (330).
6. The heating assembly according to claim 5, characterized in that The reflectivity of the inner surface of the lens sleeve (330) is greater than 90%, and / or the reflectivity of the outer surface of the lens sleeve (330) is greater than 90%.
7. The heating assembly according to claim 1, characterized in that The heating component further comprises a second heating light source (210), the second heating light source (210) being capable of facing the wafer carrier (800), and the frequency of the first heating light source (310) being greater than the frequency of the second heating light source (210).
8. The heating assembly according to claim 1, characterized in that The number of the first heating light sources (310) and the number of the light distribution lenses (320) are both at least two, each of the first heating light sources (310) corresponds to each of the light distribution lenses (320) one by one, and each of the first heating light sources (310) can selectively heat the wafer (900). When each of the first heating light sources (310) heats the wafer (900), an area formed on the wafer (900) is a light coverage area (301); when the light coverage area (301) of each of the first heating light sources (310) is the largest, the light coverage area (301) forms a total coverage area (302) on the wafer (900) under the rotation of the wafer (900); the sum of the areas of the total coverage areas (302) corresponding to each of the first heating light sources (310) is greater than or equal to the area of the wafer (900).
9. The heating assembly according to claim 8, characterized in that When each of the first heating light sources (310) can selectively heat the wafer (900) and the light coverage area (301) of each of the first heating light sources (310) is the largest, there is a gap between two adjacent light coverage areas (301).
10. The heating assembly according to claim 8, characterized in that When each of the first heating light sources (310) can selectively heat the wafer (900) and the light coverage area (301) of each of the first heating light sources (310) is the largest, among any two adjacent total coverage areas (302), one of the total coverage areas (302) is located outside the other total coverage area (302).
11. A semiconductor process chamber, characterized in that: It comprises a chamber body (100) and a heating assembly as claimed in any one of claims 1 to 10, wherein the first heating light source (310) and the light distribution lens (320) are both arranged in the chamber body, and the light distribution lens can move relative to the chamber body (100).
12. The semiconductor process chamber according to claim 11, characterized in that: The first heating light source (310) is arranged in a vertical direction.