Wafer polishing equipment

By introducing liquid nozzles and control valve systems into the wafer polishing equipment, the problem of exposure to air while the wafer is waiting is solved, and the wet protection and efficient processing of the wafer is achieved.

CN222537291UActive Publication Date: 2025-02-28BEIJING SEMICORE MICROELECTRONICS EQUIPMENT CO LTD
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Patent Information

Application Number
CN202421223666.9
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-05-31
Publication Date
2025-02-28
Estimated Expiration
2034-05-31

AI Technical Summary

Technical Problem

During the polishing process of existing wafer polishing equipment, the finished polishing wafer needs to wait for the next polishing disk to be idle, resulting in the wafer being exposed to the air for a long time, which is prone to contamination and loss of wetness, and thus leads to scrapping.

Method used

Design a wafer polishing equipment, equipped with a liquid nozzle and a control valve system, which can select spray chemical liquid or deionized water according to the polishing and waiting state to keep the wafer moist.

Benefits of technology

The wafers in the waiting state are protected by spraying deionized water, which avoids pollution and scrapping problems caused by exposure to the air, while improving the processing efficiency and processing quality of the wafers.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model provides wafer polishing equipment which comprises a supporting vertical pipe, a rotating arm, a plurality of polishing discs, a liquid spraying pipe and a loading and unloading platform, the rotating arm is rotatably connected to the upper end of the supporting vertical pipe, the loading and unloading platform and the plurality of polishing discs are respectively arranged on the periphery of the supporting vertical pipe at intervals, a plurality of polishing heads are arranged on the periphery of the rotating arm, and the liquid spraying pipe is connected with the loading and unloading platform. The liquid spraying pipe is connected with a first pipeline and a second pipeline and used for spraying the polishing solution and the deionized water to the wafer in different periods. According to the wafer polishing equipment provided by the utility model, the rotating arm can drive the polishing head to rotate around the main shaft of the supporting vertical pipe, so that the polishing head can drive the wafer to carry out position switching between the two adjacent polishing discs or between the polishing discs and the loading and unloading platform, and the polishing requirement of the wafer is met by connecting the first pipeline to spray polishing liquid; or the second pipeline is connected to spray deionized water to protect the wafer in the waiting state, so that the wafer is kept wet and clean in the waiting process, and the processing quality of the wafer is ensured.
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Description

Technical Field

[0001] The utility model belongs to the technical field of wafer polishing, and more specifically relates to a wafer polishing device. Background Art

[0002] Chemical Mechanical Polishing (CMP) is an important technical means for wafer surface flattening. In a polishing liquid environment, the polishing head presses the wafer onto the polishing plate, and the wafer and the polishing pad move relative to each other, using chemical corrosion and mechanical friction to achieve wafer flattening.

[0003] Wafers usually need to be polished and ground by two or more polishing pads to achieve the preset polishing effect, so polishing equipment generally contains two or more polishing pads. According to the film characteristics of the wafer and the polishing requirements, the wafer will undergo different polishing processes on different polishing pads, so the polishing time on different polishing pads is also different.

[0004] In the prior art, after polishing of a wafer on a polishing plate is completed, the corresponding polishing head above the polishing plate absorbs the wafer pressed on the polishing plate and makes the wafer leave the surface of the polishing plate. If the polishing time of other polishing plates is different, the wafer on the polishing plate that has been polished first needs to wait, and the surface of the wafer will be contaminated if it is exposed to the air for a long time, and the wettability of the wafer cannot be maintained, which may easily lead to the scrapping of the wafer. Utility Model Content

[0005] The utility model aims to provide a wafer polishing device, which can select chemical liquid or deionized water to spray the wafer surface according to the polishing and waiting conditions of the wafer, thereby ensuring the processing quality of the wafer and improving the processing efficiency of the wafer.

[0006] To achieve the above-mentioned purpose, the technical solution adopted by the utility model is: to provide a wafer polishing equipment, including a supporting vertical pipe, a rotating arm, a polishing disk, a liquid nozzle and a loading and unloading platform, the rotating arm is rotatably connected to the upper end of the supporting vertical pipe, a plurality of polishing disks are provided, the loading and unloading platform and the plurality of polishing disks are respectively and spaced apart on the outer periphery of the supporting vertical pipe, a plurality of polishing heads are provided on the outer periphery of the rotating arm, which can correspond one-to-one with the loading and unloading platform and the polishing disk, the polishing head can adsorb the wafer and drive the wafer to change position between two adjacent polishing disks or between the loading and unloading platform and the polishing disk, the liquid nozzle is arranged one-to-one with the polishing disk, the liquid nozzle is connected with a first pipeline for supplying chemical liquid and a second pipeline for supplying deionized water, and the liquid nozzle is used to spray polishing liquid and deionized water onto the wafer in time periods.

[0007] In a possible implementation, three polishing discs are provided, the rotating arm includes four branch arms, the four branch arms are arranged at intervals along the circumference of the supporting vertical pipe, a telescopic member extending downward is provided under each branch arm, and the polishing head is connected to the bottom of the telescopic member.

[0008] In a possible implementation, two adjacent branch arms are arranged at a right angle, and the telescopic member is connected below the outer ends of the branch arms.

[0009] In one possible implementation, the liquid nozzle is arranged on the outside of the polishing disk through a mounting frame. The liquid nozzle is arranged higher than the polishing disk. The liquid outlet end of the liquid nozzle extends toward the middle of the polishing disk, and is used to spray chemical liquid and deionized water onto the top surface of the wafer in time periods.

[0010] In some embodiments, the mounting frame is located on a side of the polishing disk away from the supporting vertical pipe. The mounting frame is provided with a limiting groove with an opening set upward and used to limit the liquid nozzle. The limiting groove is set to pass through the radial direction of the polishing disk. A plurality of mounting clamps are provided above the mounting frame and are buckled above the liquid nozzle. The mounting clamps are connected to the mounting frame through connecting parts.

[0011] In a possible implementation, a spray head is provided at the liquid outlet end of the liquid spray pipe, and the main axis of the spray head extends obliquely toward the center side of the polishing disk.

[0012] In a possible implementation, the first pipeline and the second pipeline are arranged in parallel, the liquid outlets of the first pipeline and the second pipeline are respectively connected to the liquid inlet of the liquid nozzle, the first pipeline is provided with a first control valve, and the second pipeline is provided with a second control valve.

[0013] In some embodiments, the wafer polishing equipment also includes a controller electrically connected to the first control valve and the second control valve respectively, each polishing plate is respectively connected to a driver, the controller is electrically connected to the driver, can receive a first start and stop signal from the driver, and send a first start and close instruction to the first control valve, and simultaneously send a second start and close instruction to the second control valve.

[0014] In a possible implementation, a deionized water delivery pipe is provided on the outer side of the loading and unloading platform, a third control valve is provided on the deionized water delivery pipe, and the third control valve is electrically connected to the controller for receiving a third opening and closing instruction sent by the controller.

[0015] In some embodiments, a drive motor for driving the rotating arm to rotate circumferentially is provided in the support riser, and the drive motor is electrically connected to the controller. The controller is used to receive a second start and stop signal of the drive motor, and simultaneously send a first opening and closing command to the first control valve, send a second opening and closing command to the second control valve, and send a third opening and closing command to the third control valve.

[0016] Compared with the prior art, the solution shown in the embodiment of the present application is that the rotating arm can drive the polishing head to rotate around the main axis of the supporting riser, so that the polishing head can drive the wafer to switch positions between two adjacent polishing plates or between the polishing plate and the loading and unloading platform, and the polishing liquid is sprayed by connecting the first pipeline to meet the wafer polishing requirements, or the deionized water is sprayed by connecting the second pipeline to protect the wafer in the waiting state, so that the wafer can be kept moist and clean during the waiting process, avoiding the scrap problem caused by the wafer being exposed to the air, and at the same time, it is also convenient to improve the processing efficiency of the wafer and ensure the processing quality of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0018] Figure 1 A schematic diagram of the structure of a wafer polishing device provided by an embodiment of the utility model;

[0019] Figure 2 For the utility model embodiment Figure 1 A-direction structural diagram of the middle branch arm;

[0020] Figure 3 For the utility model embodiment Figure 1 A schematic diagram of an enlarged top view of one of the branch arms, the polishing disc and the liquid nozzle;

[0021] Figure 4 For the utility model embodiment Figure 3 Schematic diagram of the cross-sectional structure of the middle BB;

[0022] Figure 5 A control schematic diagram of a wafer polishing device provided in an embodiment of the utility model.

[0023] Among them, the reference numerals in the figure are:

[0024] 1. Support riser; 2. Rotating arm; 21. Branch arm; 22. Telescopic member; 3. Polishing disc; 4. Liquid spray pipe; 5. Loading and unloading platform; 51. Deionized water delivery pipe; 52. Third control valve; 6. Polishing head; 7. Mounting frame; 71. Limiting groove; 72. Mounting clamp; 73. Connecting piece; 74. Spray head; 81. First pipeline; 82. Second pipeline; 83. First control valve; 84. Second control valve; 9. Controller; 91. Driver; 92. Drive motor. DETAILED DESCRIPTION

[0025] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0026] It should be noted that when an element is referred to as being "disposed on" another element, it may be directly on the other element or indirectly on the other element. It should be understood that the orientation or positional relationship indicated by the terms "length", "width", "upper", "lower", "front", "back", "top", "bottom", "inside", "outside", etc. is based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing the utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the utility model. The terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the utility model, the meaning of "several" is two or more, unless otherwise clearly and specifically defined.

[0027] Please also read Figures 1 to 5 , the wafer polishing equipment provided by the utility model is now described. The wafer polishing equipment includes a support stand pipe 1, a rotating arm 2, a polishing disc 3, a liquid spray pipe 4 and a loading and unloading platform 5. The rotating arm 2 is rotatably connected to the upper end of the support stand pipe 1. There are a plurality of polishing discs 3. The loading and unloading platform 5 and the plurality of polishing discs 3 are respectively arranged at intervals on the outer periphery of the support stand pipe 1. The outer periphery of the rotating arm 2 is provided with a plurality of polishing heads 6 that can correspond to the loading and unloading platform 5 and the polishing disc 3 one by one. The polishing head 6 can absorb the wafer and drive the wafer to change position between two adjacent polishing discs 3 or between the loading and unloading platform 5 and the polishing disc 3. The liquid spray pipe 4 is arranged one by one with the polishing disc 3. The liquid spray pipe 4 is connected to a first pipeline 81 for supplying chemical liquid and a second pipeline 82 for supplying deionized water. The liquid spray pipe 4 is used to spray the polishing liquid and deionized water onto the wafer in time periods.

[0028] Compared with the prior art, the wafer polishing equipment provided in this embodiment has a rotating arm 2 that can drive the polishing head 6 to rotate around the main axis of the supporting riser 1, and utilizes multiple polishing heads 6 to respectively adsorb wafers to achieve synchronous processing of multiple wafers, which helps to improve processing efficiency. The polishing head 6 can drive the wafer to switch positions between two adjacent polishing disks 3 or between the polishing disk 3 and the loading and unloading platform 5, and spray polishing liquid by connecting the first pipeline 81 to meet the wafer polishing requirements, or spray deionized water by connecting the second pipeline 82 to protect the wafer in the waiting state, so that the wafer can be kept moist and clean during the waiting process, avoiding the scrap problem caused by the wafer being exposed to the air, and at the same time, it is also convenient to improve the processing efficiency of the wafer and ensure the processing quality of the wafer.

[0029] In this embodiment, the wafer needs to be polished in multiple steps, and the number of polishing discs 3 is the number of times the wafer is polished. According to the polishing requirements of different wafer products, the wafer adopts different polishing methods such as two, three or four polishing, and the wafer needs to follow the polishing head 6 to switch between multiple polishing discs 3, that is, to switch between multiple polishing stations. The loading and unloading platform 5 is used to supply wafers that have not been polished or receive wafers that have completed all polishing steps, so as to realize the loading and unloading operation of the wafer.

[0030] When the wafer is polished on the polishing disk 3, it is necessary to spray chemical liquid onto the wafer to ensure the polishing quality. When multiple polishing heads 6 adsorb wafers on different polishing disks 3 for polishing, since the polishing time required for the wafers on different polishing disks 3 is slightly different, the wafers with short polishing time need to wait on the original polishing disk 3, that is, wait at the original workstation. In order to prevent the waiting wafers from being exposed to the air, deionized water can be sprayed on the waiting wafers through the liquid nozzle 4 to keep the wafers moist, which effectively protects the wafers and facilitates the wafers to meet the subsequent processing requirements.

[0031] In one possible implementation, see Figures 1 to 5 There are three polishing discs 3, and the rotating arm 2 includes four branch arms 21. The four branch arms 21 are arranged at intervals along the circumference of the supporting standpipe 1. A telescopic member 22 extending downward is provided under each branch arm 21, and the polishing head 6 is connected to the bottom of the telescopic member 22.

[0032] In this embodiment, the wafer needs to be polished three times as an example. In addition to the three polishing stations that need to be provided with three polishing discs 3, a loading and unloading platform 5 is also provided. Correspondingly, four branch arms 21 are provided on the periphery of the rotating arm 2, and each branch arm 21 is provided with a polishing head 6, so that the total number of polishing discs 3 and loading and unloading platforms 5 is equal to the number of polishing heads 6, so as to meet the effect of synchronously processing three wafers.

[0033] In one possible implementation, see Figures 1 to 5 , two adjacent branch arms 21 are arranged at a right angle, and the telescopic member 22 is connected to the lower part of the outer end of the branch arm 21.

[0034] In this embodiment, the telescopic part 22 arranged below the branch arm 21 can drive the polishing head 6 to move up and down, so that the wafer that has been polished at this workstation can be separated from the corresponding polishing disk 3 below, and then follow the polishing head 6 to rotate around the supporting vertical tube 1, avoiding friction between the bottom surface of the wafer and the polishing disk 3, thereby ensuring the processing quality of the wafer.

[0035] Specifically, two adjacent branch arms 21 are arranged at a right angle, so that the branch arms 21 are evenly arranged on the periphery of the rotating arm 2, which facilitates the position switching of the wafer between the three polishing plates 3 and the loading and unloading platform 5. The position switching can be achieved each time the rotating arm 2 rotates ninety degrees.

[0036] In one possible implementation, see Figures 1 to 5 The liquid nozzle 4 is arranged on the outside of the polishing disk 3 through the mounting frame 7. The liquid nozzle 4 is arranged higher than the polishing disk 3. The liquid outlet end of the liquid nozzle 4 extends to the middle of the polishing disk 3, and is used to spray chemical liquid and deionized water onto the top surface of the wafer in time periods.

[0037] In this embodiment, the liquid spray pipe 4 is arranged outside the polishing disc 3 through the mounting frame 7, and the mounting frame 7 is located on the side of the polishing disc 3 away from the supporting standpipe 1. The liquid spray pipe 4 is arranged higher than the polishing disc 3, and can spray chemical liquid or deionized water on the wafer on the polishing disc 3. The liquid outlet end of the liquid spray pipe 4 extends to the middle of the polishing disc 3, which is convenient for accurately spraying the chemical liquid or deionized water onto the surface of the wafer, so that the spraying can achieve full coverage.

[0038] For some examples, see Figures 1 to 5 The mounting frame 7 is located on the side of the polishing plate 3 away from the supporting standpipe 1. The mounting frame 7 is provided with a limiting groove 71 which is opened upward and used to limit the liquid nozzle 4. The limiting groove 71 is set through the radial direction of the polishing plate 3. A plurality of mounting clamps 72 which are buckled on the liquid nozzle 4 are provided above the mounting frame 7. The mounting clamps 72 are connected to the mounting frame 7 through the connecting piece 73. The limiting groove 71 is used to limit the liquid nozzle 4, and the mounting clamps 72 are used to fix the liquid nozzle 4, so as to ensure the stability of the installation of the liquid nozzle 4.

[0039] In one possible implementation, see Figures 1 to 5The liquid outlet of the liquid nozzle 4 is provided with a spray head 74, and the main axis of the spray head 74 extends obliquely toward the center side of the polishing plate 3. The liquid outlet of the liquid nozzle 4 is provided with a spray head 74, and the liquid outlet of the spray head 74 is arranged in an inclined manner to ensure effective avoidance of the polishing head 6, and to enable the spray direction to accurately correspond to the center position of the wafer, so that the chemical liquid and deionized water can effectively cover the outer wall of the wafer to meet the needs of polishing or protection.

[0040] In one possible implementation, see Figures 1 to 5 The first pipeline 81 and the second pipeline 82 are arranged in parallel, and the liquid outlet ends of the first pipeline 81 and the second pipeline 82 are respectively connected to the liquid inlet end of the liquid nozzle 4. The first pipeline 81 is provided with a first control valve 83, and the second pipeline 82 is provided with a second control valve 84.

[0041] In this embodiment, chemical liquid is supplied to the liquid nozzle 4 through the first pipeline 81, and deionized water is supplied to the liquid nozzle 4 through the second pipeline 82. The first pipeline 81 and the second pipeline 82 are controlled by the first control valve 83 and the second control valve 84, respectively. When chemical liquid needs to be supplied to the liquid nozzle 4, the first control valve 83 is opened and the second control valve 84 is closed; when deionized water needs to be supplied to the liquid nozzle 4, the first control valve 83 is closed and the second control valve 84 is opened.

[0042] For some examples, see Figures 1 to 5 The wafer polishing equipment also includes a controller 9 electrically connected to the first control valve 83 and the second control valve 84 respectively. Each polishing disk 3 is connected to a driver 91 respectively. The controller 9 is electrically connected to the driver 91, and can receive a first start and stop signal from the driver 91, and send a first start and close command to the first control valve 83, and send a second start and close command to the second control valve 84 at the same time.

[0043] In this embodiment, the controller 9 can control the first control valve 83 and the second control valve 84, and select to send a first start-stop signal to the first pipeline 81 and a second start-stop signal to the second pipeline 82 according to the polishing or waiting status of the wafer on the corresponding polishing disk 3, thereby controlling the first pipeline 81 or the second pipeline 82 to be connected, thereby realizing the selection of chemical liquid or deionized water.

[0044] Specifically, it is necessary to judge according to the situation that the polishing disk 3 is driven by the driver 91. When the wafer is polished, the rotation speeds between the polishing head 6 and the polishing disk 3 are different, and the wafer is adsorbed by the polishing head 6, and the speed is consistent with the polishing head 6. At this time, there is relative friction between the wafer and the polishing disk 3, so as to achieve the polishing effect on the wafer. When the wafer is in a waiting state, the polishing head 6 and the polishing disk 3 maintain the same rotation speed, and there is no relative friction between the wafer and the polishing disk 3. Therefore, in the above process, the driver 91 has a higher rotation speed when the wafer is polishing, and a lower rotation speed and is consistent with the polishing head 6 when the wafer is waiting. By detecting the rotation speed of the driver 91, it can be known whether the wafer is in a polishing or waiting state. The controller 9 can judge the state of the wafer according to the preset program, and send a first opening and closing instruction to the first pipeline 81 according to the state of the wafer, and send a second opening and closing instruction to the second pipeline 82.

[0045] In one possible implementation, see Figures 1 to 5 A deionized water delivery pipe 51 is provided on the outside of the loading and unloading platform 5, and a third control valve 52 is provided on the deionized water delivery pipe 51. The third control valve 52 is electrically connected to the controller 9 and is used to receive the third opening and closing instruction sent by the controller 9. For the wafers in the waiting state on the loading and unloading platform 5, deionized water can be sprayed through the deionized water delivery pipe 51 to protect the wafers on the loading and unloading platform 5. The above process can be achieved by the controller 9 sending the third opening and closing instruction to the third control valve 52.

[0046] For some examples, see Figures 1 to 5 A driving motor 92 for driving the rotating arm 2 to rotate circumferentially is provided in the supporting riser 1. The driving motor 92 is electrically connected to the controller 9. The controller 9 is used to receive a second start and stop signal of the driving motor 92, and simultaneously send a first opening and closing command to the first control valve 83, send a second opening and closing command to the second control valve 84, and send a third opening and closing command to the third control valve 52.

[0047] In this embodiment, the rotating arm 2 is driven to rotate by the driving motor 92, thereby driving the telescopic member 22, the polishing head 6 and the wafer to change position. When the driving motor 92 rotates, the first control valve 83, the second control valve 84 and the third control valve 52 should be in a closed state to avoid waste of deionized water or chemical liquid. The controller 9 can monitor the operating state of the driving motor 92, and then control the first control valve 83, the second control valve 84 and the third control valve 52 to be in a disconnected state to avoid waste of deionized water or chemical liquid.

[0048] For the convenience of description, the three polishing disks are defined as the first polishing disk, the second polishing disk and the third polishing disk in sequence. In the initial state, the corresponding polishing heads above the three polishing disks are the first polishing head, the second polishing head and the third polishing head in sequence, the polishing head above the loading and unloading platform is the fourth polishing head, the first liquid nozzle is arranged on the outer side of the first polishing disk, the second liquid nozzle is arranged on the outer side of the second polishing disk, and the third liquid nozzle is arranged on the outer side of the third polishing disk.

[0049] During wafer polishing, the fourth polishing head loads the first wafer from the loading and unloading platform, the rotating arm rotates 90° counterclockwise, and brings the first wafer to the first polishing plate. The fourth polishing head drives the first wafer to press on the first polishing plate under the action of the telescopic member, and the first liquid nozzle sprays chemical liquid on the first wafer. After reaching the preset polishing time or film removal amount, the first polishing plate stops. In the above process, the third polishing head loads the second wafer at the loading and unloading platform. After loading is completed, the ionized water delivery pipe is used to spray deionized water on the second wafer.

[0050] Afterwards, the rotating arm rotates another 90°, the fourth polishing head drives the first wafer to rotate above the second polishing disk, the third polishing head drives the second wafer to rotate above the first polishing disk, the fourth polishing head carries the first wafer to polish on the second polishing disk, and at the same time the third polishing head carries the second wafer to polish on the first polishing disk. At this time, the second polishing head loads the third wafer at the loading and unloading platform. After loading is completed, deionized water is sprayed on the third wafer using the ion water delivery pipe.

[0051] In the above process, if the polishing time required for the first wafer is shorter than that for the second wafer, the first wafer stays on the second polishing plate and waits after processing, while the second liquid nozzle sprays deionized water to the first wafer.

[0052] After the second wafer is polished, the rotating arm continues to rotate 90°, the fourth polishing head presses the first wafer to polish on the third polishing plate, the third polishing head presses the second wafer to polish on the second polishing plate, the second polishing head presses the third wafer to polish on the first polishing plate, the first polishing head loads the fourth wafer at the loading and unloading platform, and after loading, the ion water delivery pipe is used to spray deionized water on the fourth wafer. In this process, deionized water is sprayed on the wafer in the waiting state, and chemical liquid is sprayed on the wafer in the polishing state.

[0053] After completing the above steps, the rotating arm continues to rotate 90° to reach the initial position. The fourth polishing head unloads the first wafer to the loading and unloading platform and reloads the fifth wafer. The third polishing head presses the second wafer on the third polishing plate to polish, the second polishing head presses the third wafer on the second polishing plate to polish, and the first polishing head presses the fourth wafer on the first polishing plate to polish. Deionized water is sprayed on the wafer in the waiting state as needed, and chemical liquid is sprayed on the wafer in the polishing state. Repeat the above steps until all wafers are processed.

[0054] In the above-mentioned wafer polishing equipment, the rotating arm can drive the polishing head to rotate around the main axis of the supporting vertical tube, and use multiple polishing heads to adsorb wafers respectively to realize synchronous processing of multiple wafers, which helps to improve processing efficiency. By connecting the first pipeline to spray polishing liquid to meet the wafer polishing needs, or by connecting the second pipeline to spray deionized water to protect the wafers in the waiting state, the wafers can be kept moist and clean during the waiting process, avoiding the scrap problem caused by the wafers being exposed to the air. At the same time, it is also convenient to improve the processing efficiency of the wafers and ensure the processing quality of the wafers.

[0055] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. Wafer polishing equipment, characterized in that: The invention comprises a supporting vertical pipe (1), a rotating arm (2), a polishing disc (3), a liquid spray pipe (4) and a loading and unloading platform (5), wherein the rotating arm (2) is rotatably connected to the upper end of the supporting vertical pipe (1), a plurality of polishing discs (3) are provided, the loading and unloading platform (5) and the plurality of polishing discs (3) are respectively arranged at intervals on the outer periphery of the supporting vertical pipe (1), and a plurality of polishing heads (6) which can correspond one to one with the loading and unloading platform (5) and the polishing discs (3) are provided on the outer periphery of the rotating arm (2). ), the polishing head (6) is capable of adsorbing the wafer and driving the wafer to change position between two adjacent polishing discs (3) or between the loading and unloading platform (5) and the polishing disc (3), the liquid nozzle (4) is arranged in a one-to-one correspondence with the polishing disc (3), the liquid nozzle (4) is connected to a first pipeline (81) for supplying chemical liquid and a second pipeline (82) for supplying deionized water, and the liquid nozzle (4) is used to spray polishing liquid and deionized water onto the wafer in time periods.

2. The wafer polishing equipment according to claim 1, characterized in that: The polishing discs (3) are provided with three, the rotating arm (2) comprises four branch arms (21), the four branch arms (21) are arranged at intervals along the circumference of the supporting vertical pipe (1), a telescopic member (22) extending downward is provided below each branch arm (21), and the polishing head (6) is connected below the telescopic member (22).

3. The wafer polishing equipment according to claim 2, characterized in that: The two adjacent branch arms (21) are arranged at a right angle, and the telescopic member (22) is connected below the outer ends of the branch arms (21).

4. The wafer polishing equipment according to claim 1, characterized in that: The liquid nozzle (4) is arranged on the outside of the polishing disc (3) through a mounting frame (7); the liquid nozzle (4) is arranged higher than the polishing disc (3); the liquid outlet end of the liquid nozzle (4) extends toward the middle of the polishing disc (3) and is used to spray chemical liquid and deionized water onto the top surface of the wafer in time periods.

5. The wafer polishing equipment according to claim 4, characterized in that: The mounting frame (7) is located on a side of the polishing disc (3) away from the supporting vertical pipe (1); the mounting frame (7) is provided with a limiting groove (71) which is opened upward and is used to limit the position of the liquid nozzle (4); the limiting groove (71) is arranged to pass through the polishing disc (3) in a radial direction; a plurality of mounting clamps (72) which are buckled on the top of the liquid nozzle (4) are provided above the mounting frame (7); the mounting clamps (72) are connected to the mounting frame (7) via a connecting piece (73).

6. The wafer polishing equipment according to claim 5, characterized in that: A spray head (74) is provided at the liquid outlet end of the liquid spray pipe (4), and the main axis of the spray head (74) extends obliquely toward the center side of the polishing disc (3).

7. The wafer polishing device according to any one of claims 1 to 6, characterized in that: The first pipeline (81) and the second pipeline (82) are arranged in parallel, and the liquid outlet ends of the first pipeline (81) and the second pipeline (82) are respectively connected to the liquid inlet end of the liquid nozzle (4), and the first pipeline (81) is provided with a first control valve (83), and the second pipeline (82) is provided with a second control valve (84).

8. The wafer polishing equipment according to claim 7, characterized in that: The wafer polishing equipment also includes a controller (9) electrically connected to the first control valve (83) and the second control valve (84), respectively. Each of the polishing discs (3) is connected to a driver (91), respectively. The controller (9) is electrically connected to the driver (91), and is capable of receiving a first start / stop signal from the driver (91), and sending a first start / stop command to the first control valve (83), and simultaneously sending a second start / stop command to the second control valve (84).

9. The wafer polishing equipment according to claim 8, characterized in that: A deionized water delivery pipe (51) is provided on the outside of the loading and unloading platform (5), and a third control valve (52) is provided on the deionized water delivery pipe (51). The third control valve (52) is electrically connected to the controller (9) and is used to receive a third opening and closing instruction sent by the controller (9).

10. The wafer polishing equipment according to claim 9, characterized in that: The support riser (1) is provided with a drive motor (92) for driving the rotating arm (2) to rotate circumferentially. The drive motor (92) is electrically connected to the controller (9). The controller (9) is used to receive a second start / stop signal of the drive motor (92), and simultaneously send a first start / stop command to the first control valve (83), send a second start / stop command to the second control valve (84), and send a third start / stop command to the third control valve (52).