Slide glass boat and solar cell production equipment

Abstract

The utility model discloses a slide glass boat and a solar cell production device, the slide glass boat comprises a boat rack and a slide glass rack, the boat rack is provided with a placing position; the slide holder is located in the placement position and comprises a first baffle and a second baffle which are parallel and spaced and a connecting piece arranged between the first baffle and the second baffle, a space defined by the first baffle, the second baffle and the connecting piece is used for vertically placing a silicon wafer, and the first baffle and the second baffle are both parallel to the silicon wafer; the first baffle and the second baffle each comprise a plate body part and an interlayer part arranged in the plate body part, and the interlayer parts can absorb infrared light. The wafer carrying boat provided by the utility model can improve the heating uniformity of the silicon wafer in the diffusion process, thereby improving the quality and yield of the silicon wafer.

Description

Technical Field

[0001] The present application relates to the technical field of solar cell production, and in particular to a wafer boat and solar cell production equipment. Background Art

[0002] In the process of preparing solar cells, silicon wafers need to be placed in a diffusion furnace via a wafer boat, and nitrogen and diffusion elements are introduced into the diffusion furnace to diffuse and deposit PN junctions on the surface of the silicon wafers.

[0003] In the related art, when nitrogen is introduced into the diffusion furnace, the temperature of the nitrogen is equivalent to room temperature. Therefore, the nitrogen can take away part of the heat of the silicon wafer. Since the thermal conductivity of the silicon wafer is poor, when the internal space of the diffusion furnace is heated, it will cause uneven local heating of the silicon wafer, thereby affecting the quality and yield of the silicon wafer. Utility Model Content

[0004] In view of the above-mentioned deficiencies in the prior art, the utility model provides a wafer boat and a solar cell production device, which can improve the uniformity of heating of silicon wafers during the diffusion process, thereby improving the quality and yield rate of silicon wafers.

[0005] In order to solve the above technical problems, in a first aspect, the utility model provides a wafer boat, the wafer boat comprising:

[0006] A boat frame, wherein the boat frame has a placement position;

[0007] A wafer carrier, the wafer carrier is located in the placement position, the wafer carrier includes a first baffle and a second baffle that are parallel and spaced apart, and a connector disposed between the first baffle and the second baffle, the space enclosed by the first baffle, the second baffle and the connector is used for vertically placing silicon wafers, the first baffle and the second baffle are both parallel to the silicon wafers, the first baffle and the second baffle include a plate body and an interlayer portion disposed in the plate body, and the interlayer portion can absorb infrared light.

[0008] In a possible implementation manner of the first aspect, the plate body portion is a silicon plate, and the interlayer portion is a metal plate.

[0009] In a possible implementation manner of the first aspect, the plate body portion includes a first plate body portion and a second plate body portion that are parallel and spaced apart, and the interlayer portion is located between the first plate body portion and the second plate body portion.

[0010] In a possible implementation of the first aspect, at least a portion of the edge of the interlayer portion is flush with the edges of the first plate body portion and the second plate body portion; or,

[0011] There is a preset distance between the four edges of the sandwich portion and the four edges of the first plate portion and the second plate portion.

[0012] In a possible implementation manner of the first aspect, a hollow hole is provided on the interlayer portion.

[0013] In a possible implementation manner of the first aspect, the hollow hole includes a plurality of dot-shaped through holes, and the plurality of dot-shaped through holes are arranged in an array; or,

[0014] The hollow holes include a plurality of parallel and spaced linear through holes or wavy line through holes.

[0015] In a possible implementation of the first aspect, the wafer carrier includes a plurality of wafer carriers, and the plurality of wafer carriers are arranged in sequence along a preset direction, and the preset direction is parallel to a plate surface direction of the first baffle;

[0016] The boat frame includes a first end plate and a second end plate spaced apart along the preset direction and a limiting member connected between the first end plate and the second end plate. The first end plate, the second end plate and the limiting member together form the placement position. The first end plate and the second end plate are both perpendicular to the first baffle. Metal interlayers are both provided in the first end plate and the second end plate.

[0017] In a possible implementation manner of the first aspect, the thickness of the metal interlayer and the interlayer portion are both n, and 0.5 mm≤n≤2 mm.

[0018] In a possible implementation manner of the first aspect, a plurality of ventilation holes are disposed on the first end plate and the second end plate.

[0019] In a second aspect, the utility model further provides a solar cell production device, the solar cell production device comprising:

[0020] A diffusion furnace having an internal space and an air inlet and an air outlet communicating with the internal space;

[0021] The wafer boat according to the first aspect, wherein the wafer boat is located in the internal space;

[0022] A heating device is used to heat the internal space.

[0023] Compared with the prior art, this application has at least the following beneficial effects:

[0024] Since the wafer carrier includes a first baffle and a second baffle, the stacked silicon wafers are arranged in a space enclosed by the first baffle, the second baffle and the connecting piece, and the first baffle and the second baffle are parallel to the silicon wafers. Therefore, when the wafer carrier boat is placed in a diffusion furnace and nitrogen is introduced into the diffusion furnace, the nitrogen can be prevented from directly contacting the two outermost silicon wafers through the blocking of the first baffle and the second baffle, thereby preventing the two outermost silicon wafers from taking away more heat due to the flow of nitrogen, reducing the temperature difference between the two outermost silicon wafers and the inner silicon wafer, and improving the effect of the silicon wafer diffusion process. In addition, since the first baffle plate and the second baffle plate both include a plate body portion and an interlayer portion arranged in the plate body portion, and the interlayer portion can absorb infrared light, therefore, on the one hand, the interlayer portion can reduce the number of infrared light passing through the first baffle plate and the second baffle plate, or isolate the infrared light passing through the first baffle plate and the second baffle plate, thereby avoiding the situation where the temperature of adjacent silicon wafers drops due to the easy penetration of infrared light into silicon wafers. On the other hand, the interlayer portion absorbs infrared light and can heat the first baffle plate and the second baffle plate. In this way, the heat of the first baffle plate and the second baffle plate taken away by the flow of nitrogen can be compensated, and the temperature of the silicon wafers close to the first baffle plate and the second baffle plate can be compensated, and the temperature difference between the silicon wafers close to the first baffle plate and the second baffle plate and the middle silicon wafer can be further reduced, thereby improving the uniformity of heating of the silicon wafers during the diffusion process, thereby improving the quality and yield of the silicon wafers. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0026] Figure 1 A schematic diagram of the structure of the film carrier provided in an embodiment of the utility model being installed on a boat frame;

[0027] Figure 2 A front view of a slide holder provided in an embodiment of the utility model;

[0028] Figure 3 A side view of a slide holder provided by an embodiment of the utility model;

[0029] Figure 4 A front view of a first baffle or a second baffle provided in an embodiment of the utility model;

[0030] Figure 5 for Figure 3 A local enlarged schematic diagram of the middle A;

[0031] Figure 6 for Figure 4One of the cross-sections at the middle BB;

[0032] Figure 7 for Figure 4 One of the cross-sections at the middle BB;

[0033] Figure 8 A schematic diagram of a hollow hole structure provided by an embodiment of the utility model;

[0034] Fig. 9 A schematic diagram of another hollow hole structure provided by an embodiment of the utility model;

[0035] Fig.10 A schematic diagram of the structure of a wafer boat provided in an embodiment of the utility model;

[0036] Fig.11 A front view of a first end plate or a second end plate provided in an embodiment of the utility model;

[0037] Fig.12 for Fig.11 A partial enlarged schematic diagram of the CC in the middle;

[0038] Fig.13 A schematic diagram of a structure in which a vent hole is provided on the first end plate or the second end plate provided in an embodiment of the utility model;

[0039] Fig.14 A schematic diagram of the structure of a solar cell production device provided in an embodiment of the utility model.

[0040] Description of reference numerals:

[0041] 10-Silicon wafer;

[0042] 100-film boat; 110-boat frame; 110a-placement position; 111-first end plate; 112-second end plate; 1121-metal interlayer; 1122-vent; 113-limiting member; 120-film frame; 121-first baffle; 122-second baffle; 1221-plate body; 12211-first plate body; 12212-second plate body; 1222-interlayer; 1223-hollow hole; 12231-point through hole; 12232-linear through hole; 123-connecting member; 1231-clamping groove;

[0043] 200 - solar cell production equipment; 210 - diffusion furnace; 211 - internal space; 212 - air inlet; 213 - air outlet; 220 - heating device. DETAILED DESCRIPTION

[0044] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0045] In the present invention, the terms "upper", "lower", "left", "right", "front", "back", "top", "bottom", "inside", "outside", "vertical", "horizontal", "lateral", "longitudinal" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings. These terms are mainly used to better describe the present invention and its embodiments, and are not used to limit the indicated devices, elements or components to have a specific orientation, or to be constructed and operated in a specific orientation.

[0046] In addition, some of the above terms may be used to express other meanings in addition to indicating orientation or positional relationship. For example, the term "on" may also be used to express a certain dependency or connection relationship in some cases. For those skilled in the art, the specific meanings of these terms in this utility model can be understood according to specific circumstances.

[0047] In addition, the terms "installed", "set", "provided with", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral structure; it can be a mechanical connection, or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be an internal connection between two devices, elements, or components. For those of ordinary skill in the art, the specific meanings of the above terms in this utility model can be understood according to specific circumstances.

[0048] In addition, the terms "first", "second", etc. are mainly used to distinguish different devices, elements or components (the specific types and structures may be the same or different), and are not used to indicate or imply the relative importance and quantity of the indicated devices, elements or components. Unless otherwise specified, "plurality" means two or more.

[0049] As described in the background technology of the present application, in the related technology, when nitrogen is introduced into the diffusion furnace, since the temperature of the introduced nitrogen is equivalent to room temperature, the introduced nitrogen can take away part of the heat of the silicon wafer. Since the thermal conductivity of the silicon wafer is poor, when the internal space of the diffusion furnace is heated, it will cause uneven local heating of the silicon wafer, thereby affecting the quality and yield of the silicon wafer.

[0050] In order to solve the technical problems mentioned in the background technology, the utility model provides a wafer carrier boat and a solar cell production device, wherein the first baffle and the second baffle in the wafer carrier boat both include a plate body and an interlayer portion arranged in the plate body, and the interlayer portion can absorb infrared light. Therefore, on the one hand, the first baffle and the second baffle can prevent the silicon wafers close to the first baffle and the second baffle from directly contacting the nitrogen gas passed into the diffusion furnace, thereby reducing the influence of the nitrogen gas on the temperature of the silicon wafers close to the first baffle and the second baffle. On the other hand, since the interlayer portion can absorb infrared light, the interlayer portion can generate heat after absorbing the infrared light to compensate for the heat lost by the plate body and the silicon wafer during the process of passing nitrogen, thereby improving the uniformity of heating the silicon wafer, thereby improving the quality and yield of the silicon wafer.

[0051] The present application is described in detail below through specific embodiments:

[0052] See also Figure 1 , Figure 2 , Figure 3 and Figure 4 The embodiment of the present application provides a wafer boat 100, which includes a boat frame 110 and a wafer rack 120, wherein the boat frame 110 has a placement position 110a; the wafer rack 120 is located in the placement position 110a, and the wafer rack 120 includes a first baffle 121 and a second baffle 122 that are parallel and spaced apart, and a connecting member 123 arranged between the first baffle 121 and the second baffle 122. The space enclosed by the first baffle 121, the second baffle 122 and the connecting member 123 is used for vertically placing the silicon wafer 10, the first baffle 121 and the second baffle 122 are both parallel to the silicon wafer 10, and the first baffle 121 and the second baffle 122 each include a plate body 1221 and an interlayer portion 1222 arranged in the plate body 1221, and the interlayer portion 1222 can absorb infrared light.

[0053] It should be noted that the connecting member 123 may be a plate-shaped structure or a rod-shaped structure. For example, the connecting member 123 is four connecting rods, two of which are connected between one side of the first baffle plate and the second baffle plate 122 in the first direction, and the other two connecting rods are connected between the other sides of the first baffle plate 121 and the second baffle plate 122 in the first direction, and the positions of the two connecting rods connected between one side of the first baffle plate 121 and the second baffle plate 122 correspond to the positions of the two connecting rods connected between the other sides of the first baffle plate 121 and the second baffle plate 122, see Figure 5 The connecting rod is provided with a plurality of engaging grooves 1231 arranged along the length direction of the connecting rod, and the two edges of the silicon wafer 10 in the first direction are respectively engaged in the engaging grooves 1231 of the connecting rod at corresponding positions, so that the silicon wafer 10 is placed upright. The above is just an example of the connecting member 123 using the connecting rod, and it cannot be understood as a limitation on the number and shape of the connecting member 123.

[0054] In addition, the vertical placement of the silicon wafer 10 mentioned above means that the silicon wafer 10 is perpendicular to the placement plane of the silicon wafer 10 .

[0055] The first baffle 121 and the second baffle 122 are both parallel to the silicon wafer 10 , which means that the first baffle 121 and the second baffle 122 are completely parallel or approximately parallel to the silicon wafer 10 .

[0056] The first baffle plate 121 and the second baffle plate 122 both include a plate body 1221 and an interlayer portion 1222 disposed in the plate body 1221. It should be understood that an installation space is disposed inside the first baffle plate 121 and the second baffle plate 122, and the interlayer portion 1222 is disposed in the installation space, or the first baffle plate 121 and the second baffle plate 122 are multilayer plates, and the interlayer portion 1222 is located between two adjacent layer plates. In addition, the interlayer portion 1222 may be one or more, which is not limited here.

[0057] In addition, the above-mentioned interlayer part 1222 can absorb infrared light. It should be understood that the temperature of the interlayer part 1222 increases after absorbing infrared light, and the material of the interlayer part 1222 can be a metal with good thermal conductivity and a large atomic number, or a mineral fiber with good thermal conductivity and heat resistance such as asbestos.

[0058] In the present embodiment, since the wafer carrier 120 includes the first baffle 121 and the second baffle 122, the multi-stacked silicon wafers 10 are arranged in the space enclosed by the first baffle 121, the second baffle 122 and the connecting member 123, and the first baffle 121 and the second baffle 122 are both parallel to the silicon wafers 10. Therefore, when the wafer carrier 100 is placed in the diffusion furnace 210 and nitrogen is introduced into the diffusion furnace 210, the nitrogen can be prevented from directly contacting the two outermost silicon wafers 10 through the blocking of the first baffle and the second baffle, thereby avoiding the two outermost silicon wafers 10 from taking away more heat due to the flow of nitrogen, reducing the temperature difference between the two outermost silicon wafers 10 and the inner silicon wafer 10, and improving the effect of the silicon wafer 10 diffusion process. In addition, since the first baffle plate 121 and the second baffle plate 122 both include a plate body 1221 and an interlayer portion 1222 disposed in the plate body 1221, and the interlayer portion 1222 can absorb infrared light, on the one hand, the interlayer portion 1222 can reduce the number of infrared light passing through the first baffle plate 121 and the second baffle plate 122, or isolate the infrared light passing through the first baffle plate 121 and the second baffle plate 122, thereby avoiding the temperature drop of the adjacent silicon wafer 10 due to the easy penetration of infrared light into the silicon wafer 10, and on the other hand, the interlayer portion 1222 can absorb infrared light. 222 absorbs infrared light to heat the first baffle plate 121 and the second baffle plate 122. In this way, it can compensate for the heat of the first baffle plate 121 and the second baffle plate 122 taken away by the flow of nitrogen, and perform temperature compensation on the silicon wafer 10 close to the first baffle plate 121 and the second baffle plate 122, further reducing the temperature difference between the silicon wafer 10 close to the first baffle plate 121 and the second baffle plate 122 and the middle silicon wafer 10, thereby improving the uniformity of heating of the silicon wafer 10 during the diffusion process, thereby improving the quality and yield of the silicon wafer 10.

[0059] In some possible embodiments, the plate body portion 1221 is a silicon plate, and the interlayer portion 1222 is a metal plate.

[0060] Since the plate body 1221 is a silicon plate, that is, the material of the plate body 1221 is silicon material, and the atomic number of silicon material is relatively small, infrared rays can easily pass through to heat the silicon wafer 10 between the first baffle 121 and the second baffle 122. However, since infrared rays can easily pass through silicon material, it is difficult to control the infrared rays passing through the first baffle 121 and the second baffle 122. Based on this, an interlayer portion 1222 is provided between the first baffle 121 and the second baffle 122, and the interlayer portion 1222 is a metal plate. Since the atomic number of the metal material is large, it is not conducive to the penetration of infrared rays, and it can absorb infrared rays. In this way, the infrared rays passing through the first baffle 121 and the second baffle 122 can be controlled by the metal plate, and the temperature of the metal plate can rise after absorbing the infrared rays. Since the thermal conductivity of the metal plate is good, the metal plate after the temperature rises can transfer the heat to the first baffle 121 and the silicon wafer 10, thereby further ensuring the uniformity of heating the silicon wafer 10.

[0061] In some possible embodiments, see Figure 6 The plate body 1221 includes a first plate body 12211 and a second plate body 12212 that are parallel and spaced apart, and the interlayer portion 1222 is located between the first plate body 12211 and the second plate body 12212 .

[0062] It should be understood that the above structure is that the first plate body 12211, the interlayer part 1222 and the second plate body 12212 are stacked in sequence, or the first plate body 12211 and the second plate body 12212 are stacked, and the surfaces of the first plate body 12211 and the second plate body 12212 facing each other are provided with a groove, and the interlayer part 1222 is located in the groove. In addition, the interlayer part 1222 is fixed relative to the first plate body 12211 and the second plate body 12212, respectively. For example, the interlayer part 1222 is fixedly connected to the first plate body 12211 and the second plate body 12212, respectively.

[0063] Since the interlayer portion 1222 is located between the first plate body portion 12211 and the second plate body portion 12212 , the arrangement structure of the interlayer portion 1222 is simplified, thereby simplifying the structural design of the first baffle plate 121 and the second baffle plate 122 .

[0064] In some possible embodiments, see Figure 6 , at least part of the edge of the interlayer portion 1222 is flush with the edge of the first plate portion 12211 and the second plate portion 12212; or, see Figure 7 The four edges of the interlayer portion 1222 are spaced apart from the four edges of the first plate portion 12211 and the second plate portion 12212 by a preset distance.

[0065] Among them, at least part of the edge of the sandwich part 1222 is flush with the edge of the first plate body 12211 and the second plate body 12212. It should be understood that the four edges of the sandwich part 1222 are flush with the four edges of the first plate body 12211 and the second plate body 12212, or part of the four edges of the sandwich part 1222 are flush with the four edges of the first plate body 12211 and the second plate body 12212. There is a preset distance between the four edges of the sandwich part 1222 and the four edges of the first plate body 12211 and the second plate body 12212. It should be understood that the projection contour of the sandwich part 1222 on the first plate body 12211 or the second plate body 12212 is located within the four edges of the first plate body 12211 or the second plate body 12212.

[0066] If more infrared rays need to pass through the first baffle plate 121 and the second baffle plate 122, the edges of the interlayer portion 1222 are arranged at a preset distance from the edges of the first plate body portion 12211 and the second plate body portion 12212, that is, the area covered by the interlayer portion 1222 on the first plate body portion 12211 and the second plate body portion 12212 is reduced. On the contrary, if less infrared rays need to pass through the first baffle plate 121 and the second baffle plate 122, at least part of the edges of the interlayer portion 1222 are flush with the edges of the first plate body portion 12211 and the second plate body portion 12212, that is, the coverage area of ​​the interlayer portion 1222 on the first plate body portion 12211 and the second plate body portion 12212 is increased. Those skilled in the art can make a selection according to actual needs, so that first baffle plates 121 and second baffle plates 122 with different structures can be flexibly selected according to actual needs to improve the processing quality and yield rate of the silicon wafer 10.

[0067] Further, in order to improve the uniformity of heating the silicon wafer 10, in some possible embodiments, see Figure 8 The interlayer portion 1222 is provided with a hollow hole 1223 .

[0068] Therefore, the hollow hole 1223 can allow infrared rays to pass through the interlayer portion 1222 , thereby controlling the amount of infrared rays passing through the first baffle plate 121 and the second baffle plate 122 by changing the structure of the plate body of the interlayer portion 1222 , further improving the uniformity of controlling the heating of the silicon wafer 10 .

[0069] In addition, the shapes of the hollow holes 1223 are various. In some possible embodiments, see Figure 8 , the hollow hole 1223 includes a plurality of dot-shaped through holes 12231, and the plurality of dot-shaped through holes 12231 are arranged in an array; or, see Fig. 9 The hollow hole 1223 includes a plurality of parallel and spaced straight through holes 12232 or wavy line through holes.

[0070] Among them, the point-shaped through holes 12231 can be polygonal holes such as round holes, square holes, triangular holes, etc. There is no limitation on the size of the point-shaped through holes 12231, and those skilled in the art can set them accordingly according to actual conditions. Similarly, there is no limitation on the distance between each adjacent point-shaped through holes 12231, and those skilled in the art can set them accordingly according to the heating requirements of the silicon wafer 10.

[0071] In addition, there are no restrictions on the length direction of the straight through hole 12232 or the wavy through hole. For example, the interlayer portion 1222 is rectangular, and the length direction of the straight through hole 12232 or the wavy through hole can be parallel to the length direction of the interlayer portion 1222, or can be parallel to the width direction of the interlayer portion 1222, or can be parallel to the diagonal of the interlayer portion 1222. Of course, it can also be any acute angle with the length direction of the interlayer portion 1222.

[0072] By opening a plurality of dot-shaped through holes 12231 in an array on the interlayer portion 1222 , the infrared rays passing through the interlayer portion 1222 can be made more uniform, thereby heating a plurality of points of the silicon wafer 10 , thereby improving the uniformity of heating the silicon wafer 10 .

[0073] By providing a plurality of parallel and spaced linear through holes 12232 or wavy linear through holes on the interlayer portion 1222 , the processing technology of the interlayer portion 1222 can be simplified while ensuring that the heating uniformity of the silicon wafer 10 is improved.

[0074] In some possible embodiments, participating Fig.10 and Fig.11 The wafer carrier 120 includes a plurality of wafer carriers 120 which are arranged in sequence along a preset direction, and the preset direction is parallel to the plate surface direction of the first baffle plate 121; the boat frame 110 includes a first end plate 111 and a second end plate 112 which are spaced apart along the preset direction, and a stopper 113 which is connected between the first end plate 111 and the second end plate 112; the first end plate 111, the second end plate 112 and the stopper 113 are combined to form a placement position 110a; the first end plate 111 and the second end plate 112 are both perpendicular to the first baffle plate 121; and a metal interlayer 1121 is provided in the first end plate 111 and the second end plate 112.

[0075] The above-mentioned preset direction refers to the arrangement direction of the plurality of carriers 120, that is, Fig.10 The plurality of wafer carriers 120 refers to three or more wafer carriers 120.

[0076] Since the first end plate 111 and the second end plate 112 are located at both ends of a preset direction, and the first end plate 111 and the second end plate 112 are both perpendicular to the first baffle 121, that is, both are perpendicular to the silicon wafer 10, the first end plate 111 and the second end plate 112 can play a certain blocking role on the incoming nitrogen, thereby preventing the incoming nitrogen from directly acting on the silicon wafer 10, thereby improving the diffusion effect of the silicon wafer 10.

[0077] In addition, since a metal interlayer 1121 is provided in the first end plate 111 and the second end plate 112, the metal interlayer 1121 can absorb infrared rays for heating, thereby compensating for the heat of the first end plate 111 and the second end plate 112 and the edge of the silicon wafer 10 close to the first end plate 111 and the second end plate 112 taken away by the nitrogen, thereby further improving the uniformity of heating of the silicon wafer 10.

[0078] In some possible embodiments, see Figure 6 and Fig.12 The thickness of the metal interlayer 1121 and the interlayer part 1222 are both n, 0.5mm≤n≤2mm.

[0079] If the thickness of the metal interlayer 1121 and the interlayer portion 1222 are both less than 0.5 mm, then the thickness of the metal interlayer 1121 and the interlayer portion 1222 is too thin, the absorption effect of infrared rays is poor, and the effect of improving the uniformity of heating of the silicon wafer 10 is not significant. If the thickness of the metal interlayer 1121 and the interlayer portion 1222 are both greater than 2 mm, then the thickness of the metal interlayer 1121 and the interlayer portion 1222 is too thick, thereby completely isolating the infrared rays, and the infrared rays cannot heat the silicon wafer 10, which is not conducive to improving the diffusion effect of the silicon wafer 10. Based on this, the thickness of the metal interlayer 1121 and the interlayer portion 1222 are both between 0.5 mm and 2 mm. In this way, the diffusion effect of the silicon wafer 10 can be improved while ensuring the absorption effect of the metal interlayer 1121 and the interlayer portion 122 on infrared rays.

[0080] For example, the thickness of the metal interlayer 1121 and the interlayer portion 1222 can be 0.5mm, 0.7m, 0.9m, 1m, 15mm, 1.1mm, 1.3mm, 1.5mm, 1.7mm, 1.9mm, 2mm, etc. It is worth noting that the above is only an example of the possible thickness of the metal interlayer 1121 and the interlayer portion 1222, and cannot be understood as a limitation on the specific thickness of the metal interlayer 1121 and the interlayer portion 1222. Those skilled in the art should know this.

[0081] In some possible embodiments, see Fig.13 A plurality of ventilation holes 1122 are provided on the first end plate 111 and the second end plate 112 .

[0082] The plurality of vent holes 1122 refers to two or more vent holes 1122. To improve the dispersion effect of the vent holes 1122 on nitrogen, the more vent holes 1122 are provided on the first end plate 111 and the second end plate 112, the more obvious the dispersion effect on nitrogen.

[0083] Therefore, by providing multiple vents 1122 , the nitrogen flow entering the diffusion furnace 210 disperses the multiple vents 1122 into multiple small air flows, thereby reducing the impact of the nitrogen flow on the silicon wafer 10 and further improving the quality of the silicon wafer 10 and the diffusion effect.

[0084] In order to further improve the dispersion effect of the plurality of vent holes 1122 on nitrogen, optionally, the plurality of vent holes 1122 are distributed in an array on the first end plate 111 and the second end plate 112 .

[0085] Optionally, the vent holes 1122 are circular holes, and the diameter of the vent holes 1122 is 1 mm-1.5 mm. In this way, the dispersion effect of the plurality of vent holes 1122 on the nitrogen flow can be ensured, and the impact force of the nitrogen flow can be prevented from damaging the edge of the silicon wafer 10.

[0086] Of course, the shape of the vent hole 1122 can also be other shapes, for example, the vent hole 1122 is a polygonal hole such as a square hole, a pentagonal hole, or the vent hole 1122 is an elliptical hole, etc.

[0087] See also Fig.14 The embodiment of the present application also provides a solar cell production equipment 200, which includes a diffusion furnace 210, the wafer boat 100 in the above embodiment and a heating device 220, wherein the diffusion furnace 210 has an internal space 211 and an air inlet 212 and an air outlet 213 connected to the internal space 211; the wafer boat 100 is located in the internal space 211; the heating device 220 is used to heat the internal space 211.

[0088] The wafer boat 100 in the embodiment of the present application can have the same structure as any of the wafer boats 100 in the above embodiments, and can bring the same or similar beneficial effects. For details, please refer to the description in the above embodiments, and the embodiment of the present application will not be repeated here. In addition, the heating device 220 belongs to the prior art and will not be described in detail here.

[0089] Therefore, when the silicon wafers 10 are subjected to the diffusion process, the wafer carrier boat 100 with the plurality of silicon wafers 10 is first placed into the inner space 211 of the diffusion furnace 210, and then nitrogen is introduced into the inner space 211 of the diffusion furnace 210 through the air inlet 212, and the heating device 220 is controlled to heat the inner space 211 of the diffusion furnace 210 to perform the diffusion process on the silicon wafers 10 on the wafer carrier boat 100. Since the solar cell production equipment in this embodiment adopts the wafer carrier boat in the above embodiment, and the wafer carrier boat in the above embodiment can improve the uniformity of heating the silicon wafers, the yield of the silicon wafers is improved.

[0090] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the utility model, rather than to limit it. Although the utility model has been described in detail with reference to the aforementioned embodiments, ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not make the essence of the corresponding technical solution deviate from the scope of the technical solution of the embodiments of the utility model.

Claims

1. A wafer boat, characterized in that: include: A boat frame, wherein the boat frame has a placement position; A wafer carrier, the wafer carrier is located in the placement position, the wafer carrier includes a first baffle and a second baffle that are parallel and spaced apart, and a connector disposed between the first baffle and the second baffle, the space enclosed by the first baffle, the second baffle and the connector is used for vertically placing silicon wafers, the first baffle and the second baffle are both parallel to the silicon wafers, the first baffle and the second baffle include a plate body and an interlayer portion disposed in the plate body, and the interlayer portion can absorb infrared light.

2. The wafer boat according to claim 1, characterized in that: The plate body is a silicon plate, and the interlayer portion is a metal plate.

3. The wafer boat according to claim 1, characterized in that: The plate body portion includes a first plate body portion and a second plate body portion which are parallel and spaced apart from each other, and the interlayer portion is located between the first plate body portion and the second plate body portion.

4. The wafer boat according to claim 3, characterized in that: At least part of the edge of the sandwich portion is flush with the edges of the first plate portion and the second plate portion; or, There is a preset distance between the four edges of the sandwich portion and the four edges of the first plate portion and the second plate portion.

5. The wafer boat according to claim 1, characterized in that: The interlayer portion is provided with hollow holes.

6. The wafer boat according to claim 5, characterized in that: The hollow holes include a plurality of dot-shaped through holes, and the plurality of dot-shaped through holes are arranged in an array; or, The hollow holes include a plurality of parallel and spaced linear through holes or wavy line through holes.

7. The wafer boat according to any one of claims 1 to 6, characterized in that: The wafer carriers include a plurality of wafer carriers, and the plurality of wafer carriers are arranged in sequence along a preset direction, and the preset direction is parallel to the plate surface direction of the first baffle; The boat frame includes a first end plate and a second end plate spaced apart along the preset direction and a limiting member connected between the first end plate and the second end plate. The first end plate, the second end plate and the limiting member together form the placement position. The first end plate and the second end plate are both perpendicular to the first baffle. Metal interlayers are both provided in the first end plate and the second end plate.

8. The wafer boat according to claim 7, characterized in that: The thickness of the metal interlayer and the interlayer part are both n, 0.5mm≤n≤2mm.

9. The wafer boat according to claim 7, characterized in that: A plurality of ventilation holes are disposed on the first end plate and the second end plate.

10. A solar cell production equipment, characterized in that: include: A diffusion furnace having an internal space and an air inlet and an air outlet communicating with the internal space; The wafer boat according to any one of claims 1 to 9, wherein the wafer boat is located in the internal space; A heating device is used to heat the internal space.

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