Semiconductor plant micro-seismic resistance structure

Abstract

The utility model discloses a semiconductor plant micro-seismic resistance structure which comprises a supporting bottom plate, the surface of the supporting bottom plate is fixedly connected with a plant wall, the surfaces of the two sides of the plant wall are provided with anti-collapse mechanisms, the top of the plant wall is provided with an installation groove, a plant roof is rotationally installed in the installation groove, and the upper surface of the supporting bottom plate is provided with a damping groove. And a damping mechanism is arranged in the damping groove. Through mutual cooperation of the mechanisms, the anti-collapse mechanism is used for supporting or dragging the plant wall body when the plant wall body vibrates, so that the plant wall body is prevented from collapsing after the plant wall body is broken due to vibration; the semiconductor instrument placed above the supporting bottom plate in the plant is damped and buffered through the damping mechanism during vibration, and damage to the semiconductor instrument caused by vibration is prevented.

Description

Technical Field

[0001] The utility model relates to the technical field of earthquake-resistant housing, and in particular to a micro-seismic resistant structure of a semiconductor plant. Background Art

[0002] Semiconductor plants are specialized industrial facilities designed and built for the production of semiconductor materials, chip manufacturing, and related component packaging and testing. Such plants are usually highly clean, with precisely controlled environmental conditions and strict safety standards to ensure that the micro-processing process inside is not contaminated or interfered with by the outside world, thereby ensuring the quality and yield of semiconductor products. At the same time, semiconductor plants must also have a certain degree of earthquake resistance to ensure that when the plant vibrates, the impact on the internal semiconductor materials is reduced.

[0003] For example, Chinese patent CN216428645U discloses a micro-seismic resistant structure for a semiconductor plant. This solution is achieved by setting a connecting beam between two vertical beams, and connecting and fixing mounting plate 1 at both ends of the connecting beam to the vertical beam by mounting bolt 1, and then connecting and fixing mounting plate 2 to the top beam by mounting bolt 2. The connecting beam and the supporting beam support and fix the top beam and the vertical beam, and the top beam and the vertical beam are more stable, thereby improving the seismic resistance of the structure.

[0004] However, this solution still has some shortcomings during use. For example, the semiconductor material production machines in the factory are generally precision instruments. When the floor of the factory vibrates, the semiconductor instruments in the factory will vibrate together, which may cause deviations in the operation of the semiconductor instruments and damage the production of semiconductor materials. Therefore, it is necessary to propose a semiconductor factory anti-microseismic structure to solve the above-mentioned problems. Utility Model Content

[0005] In view of the problems in the related technology, the utility model proposes a method to overcome the above technical problems existing in the existing related technology.

[0006] To this end, the specific technical solutions adopted by the utility model are as follows:

[0007] A semiconductor plant anti-microseismic structure comprises a supporting base plate, the surface of which is fixedly connected to a plant wall, anti-collapse mechanisms are arranged on both side surfaces of the plant wall, a mounting groove is opened on the top of the plant wall, a plant roof is rotatably mounted in the mounting groove, a shock-absorbing groove is opened on the upper surface of the supporting base plate, and a shock-absorbing mechanism is arranged in the shock-absorbing groove.

[0008] Furthermore, in order to prevent the factory wall from collapsing after vibration, the anti-collapse mechanism includes a sliding groove opened on the outer surface of the factory wall, limiting grooves are opened on both sides of the sliding groove, and limiting blocks are slidably installed in the limiting grooves. A support block 1 is fixedly connected to the surface of one side of the limiting block, and a shock-absorbing spring 1 is fixedly connected to the upper and lower surfaces of the support block 1. The end of the shock-absorbing spring 1 is fixedly connected to the sliding groove, a support rod is rotatably installed on the support block 1, and a support block 2 is rotatably installed on the bottom end of the support rod. The support rod supports and drags the factory wall to prevent the factory wall from collapsing after breaking due to vibration.

[0009] Furthermore, in order to realize the rotational connection between the support rod and the factory wall, a rotation groove is opened on the surface of the support block 1 and the support block 2, and a rotation shaft 1 is rotatably installed on both sides of the rotation groove. Rotation holes are opened at both ends of the support rod. The two ends of the support rod are rotatably connected to the support block 1 and the support block 2 through the rotation holes, and a positioning rod is fixedly connected to the bottom of the support block 2.

[0010] Furthermore, in order to achieve shock absorption for semiconductor instruments installed above the supporting base plate in the factory, the shock absorption mechanism includes a shock absorption base plate slidably installed in a shock absorption groove, shock absorption thresholds are fixedly installed at both ends of the factory wall, buffer grooves are provided on the shock absorption threshold and the bottom of the inner wall of the factory wall, a spring damper is installed around the edge of the outer shell of the shock absorption base plate, the end of the spring damper is fixedly connected in the buffer groove, a supporting base column is fixedly connected to the bottom surface of the shock absorption base plate, a sand layer is provided in the shock absorption groove, and the supporting base column is inserted and connected in the sand layer. By installing the spring damper at the edge of the shock absorption base plate, when the factory wall shakes, the spring damper and the buffer groove shock-absorb the shaking of the factory wall.

[0011] Furthermore, in order to realize the rotational connection between the factory roof and the factory wall, a rotating shaft 2 is rotatably installed on the bottom surface of the factory roof. The factory roof is rotatably installed in the installation groove through the rotating shaft 2 at the bottom. The rotational connection between the factory roof and the factory wall can prevent the factory wall from breaking when vibrating.

[0012] Furthermore, in order to achieve a firm installation between the positioning rod and the bottom surface, a support plate is fixedly connected to the bottom of the positioning rod. By fixing the support plate and burying it in the ground, the support rod can firmly support and drag the factory wall.

[0013] The beneficial effects of the utility model are:

[0014] 1. The rotation support of the factory wall is provided by the support rod inside the anti-collapse mechanism, so that the factory wall is more stable when vibrating and is not easy to shake. It can also support and drag the factory wall after it breaks due to vibration, effectively preventing damage caused by the collapse of the factory wall.

[0015] 2. Through the buffer grooves opened on the surfaces of the factory walls and the shock-absorbing thresholds, when the factory walls vibrate, the factory walls squeeze the spring dampers on the shock-absorbing base plate through the buffer grooves, and the spring dampers effectively buffer the vibrations of the factory walls to prevent the factory walls from squeezing the shock-absorbing base plate, causing the shock-absorbing base plate and the semiconductor instruments above it to shake, thereby causing damage to the semiconductor instruments or materials; and the loose particles in the sand layer in the shock-absorbing grooves will undergo relative displacement with the supporting base column and the shock-absorbing base plate during the propagation of the shock wave, thereby consuming part of the vibration energy and attenuating the seismic wave. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0017] Figure 1 It is a schematic diagram of the surface structure of a semiconductor plant anti-microseismic structure according to an embodiment of the utility model;

[0018] Figure 2 yes Figure 1 The enlarged schematic diagram at A in the middle;

[0019] Figure 3 It is a structural schematic diagram of an anti-collapse mechanism in a microseismic resistant structure of a semiconductor plant according to an embodiment of the utility model;

[0020] Figure 4 It is a schematic diagram of the internal structure of a shock absorbing groove in a microseismic resistant structure of a semiconductor plant according to an embodiment of the utility model;

[0021] Figure 5 It is a structural schematic diagram of a shock-absorbing base plate in an anti-micro-seismic mechanism of a semiconductor plant according to an embodiment of the utility model;

[0022] Figure 6 It is a top view of a semiconductor plant anti-microseismic structure according to an embodiment of the utility model.

[0023] In the figure:

[0024] 1. Support base plate; 2. Factory wall; 3. Anti-collapse mechanism; 301. Sliding groove; 302. Limiting groove; 303. Limiting block; 304. Support block one; 305. Shock-absorbing spring one; 306. Support rod; 307. Support block two; 308. Rotation groove; 309. Rotation axis one; 310. Rotation hole; 311. Positioning rod; 4. Installation groove; 5. Factory roof; 6. Shock-absorbing groove; 7. Shock-absorbing mechanism; 701. Shock-absorbing base plate; 702. Shock-absorbing threshold; 703. Buffer groove; 704. Spring damper; 705. Support base column; 706. Sand layer; 8. Rotation axis two; 9. Support plate. DETAILED DESCRIPTION

[0025] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0026] A semiconductor plant anti-microseismic structure comprises a metal rectangular support base plate 1, a plant wall 2 is fixedly connected to the surface of the support base plate 1, and anti-collapse mechanisms 3 are arranged on both sides of the plant wall 2 to prevent the plant wall 2 from collapsing when it vibrates and breaks;

[0027] A mounting groove 4 is provided on the top of the factory wall 2, and a factory roof 5 rotatably connected to the top is rotatably installed in the mounting groove 4, for protecting and covering the factory wall 2;

[0028] A shock absorbing groove 6 is formed on the upper surface of the supporting base plate 1, and a shock absorbing mechanism 7 is arranged in the shock absorbing groove 6 for buffering and absorbing the semiconductor instruments installed in the factory building during vibration to prevent them from being damaged.

[0029] Embodiment 1:

[0030] See also Figure 1-Figure 6As for the anti-collapse mechanism 3, the anti-collapse mechanism 3 includes a plurality of sliding grooves 301 on the outer surface of the factory wall 2, each sliding groove 301 has a limit groove 302 on both sides, a limit block 303 is slidably installed in the limit groove 302, a support block 304 is fixedly connected to one side surface of the limit block 303, a shock absorbing spring 305 is fixedly connected to the upper and lower surfaces of the support block 304, the end of the shock absorbing spring 305 is fixedly connected in the sliding groove 301, and a support rod is rotatably installed on the support block 304 306, a support block 2 307 is rotatably mounted on the bottom end of the support rod 306, a rotation groove 308 is provided on the surface of the support block 1 304 and the support block 2 307, a rotation shaft 1 309 is rotatably mounted on both sides of the rotation groove 308, a rotation hole 310 is provided at both ends of the support rod 306, and the two ends of the support rod 306 are rotatably connected to the support block 1 304 and the support block 2 307 through the rotation holes 310, a positioning rod 311 is fixedly connected to the bottom of the support block 2 307, and a support plate 9 is fixedly connected to the bottom end of the positioning rod 311.

[0031] Through the above scheme of the utility model, when in use, the positioning rod 311 and the support plate 9 at the bottom are buried in the ground, and the support rod 306 is rotatably supported by the factory wall 2 through the rotational connection with the support block 1 304 and the support block 2 307. When the factory wall 2 vibrates, the support block 1 304 at the top of the support rod 306 slides up and down in the sliding groove 301 through the cooperation of the limit block 303 and the limit groove 302. The shock-absorbing spring 1 305 at both ends of the limit block 303 buffers the vibration of the factory wall 2. Then, through the support of multiple support rods 306 on both sides of the factory wall 2, when the installation of the factory wall 2 is broken due to vibration, the factory wall 2 can be supported or dragged to prevent the factory wall 2 from collapsing.

[0032] Embodiment 2:

[0033] See also Figure 1-Figure 6As for the shock absorbing mechanism 7, the shock absorbing mechanism 7 includes a shock absorbing base plate 701 slidably installed in the shock absorbing groove 6, a pair of shock absorbing thresholds 702 are fixedly installed at both ends of the factory wall 2, and the shock absorbing thresholds 702 and the bottom of the inner wall of the factory wall 2 are both provided with buffer grooves 703, a plurality of spring dampers 704 are installed around the outer shell edge of the shock absorbing base plate 701, and the ends of the spring dampers 704 are fixedly connected in the buffer groove 703, and a plurality of evenly distributed support springs 704 are fixedly connected to the bottom surface of the shock absorbing base plate 701. The support base column 705 and the shock-absorbing groove 6 on the surface of the supporting base plate 1 are filled with a dry sand layer 706. The various support base columns 705 on the bottom surface of the shock-absorbing base plate 701 are inserted into the sand layer 706, and the shock-absorbing base plate 701 is stably supported by the sand layer 706 and the support base columns 705; a rotating shaft 2 8 is rotatably installed on the bottom surface of the factory roof 5, and the factory roof 5 is rotatably installed in the installation groove 4 through the rotating shaft 2 8 at the bottom, which is used to prevent the factory roof 5 and the factory wall 2 from breaking when vibrating.

[0034] Through the above-mentioned scheme of the utility model, during use, when the factory wall 2 vibrates, the factory wall 2 squeezes the spring damper 704 through the buffer groove 703, and the shock-absorbing spring buffers and unloads the squeezing force exerted on the shock-absorbing base plate 701 during vibration. Then, during the propagation of the shock wave, the loose particles in the sand layer 706 will be relatively displaced with the supporting base column 705 and the shock-absorbing base plate 701, thereby reducing the shaking intensity of the shock-absorbing base plate 701 during vibration, and protecting the semiconductor equipment above the shock-absorbing base plate 701 during vibration.

[0035] In summary, with the aid of the above technical solution of the utility model, by burying the positioning rod 311 and the support plate 9 in the ground on both sides of the factory wall 2, the support rod 306 can achieve a supporting effect on the factory wall 2. When the factory wall 2 is vibrated, the support rod 306 moves in the sliding groove 301 through the support block 1 304 at the top. After the movement, the shock absorbing spring 1 305 connected to the upper and lower sides of the support block 1 304 buffers the vibration of the factory wall 2. When the connection of the factory wall 2 is vibrated and broken, the support rod 306 supports the factory wall 2 through the support block 1 304. Support or drag to prevent the factory wall 2 from collapsing; when the factory wall 2 vibrates, the edge of the shock-absorbing base plate 701 is squeezed, and the shock-absorbing base plate 701 buffers and unloads the squeezing force generated by the vibration through the spring damper 704 installed on the edge and the buffer groove 703, and the loose particles in the sand layer 706 in the shock-absorbing groove 6 will be relatively displaced with the supporting base column 705 and the shock-absorbing base plate 701 during the propagation of the shock wave, thereby reducing the vibration amplitude of the shock-absorbing base plate 701 driven by the vibration of the supporting base plate 1, and reducing the impact of the vibration on the semiconductor equipment placed above the shock-absorbing base plate 701.

[0036] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A semiconductor plant anti-microseismic structure, characterized in that: The invention comprises a supporting base plate (1), the surface of the supporting base plate (1) is fixedly connected to a factory wall (2), the surfaces of both sides of the factory wall (2) are provided with anti-collapse mechanisms (3), the top of the factory wall (2) is provided with a mounting groove (4), a factory roof (5) is rotatably mounted in the mounting groove (4), and a shock absorbing groove (6) is provided on the upper surface of the supporting base plate (1), and a shock absorbing mechanism (7) is provided in the shock absorbing groove (6).

2. The semiconductor plant anti-microseismic structure according to claim 1, characterized in that: The anti-collapse mechanism (3) comprises a sliding groove (301) formed on the outer surface of a factory building wall (2), limiting grooves (302) formed on both sides of the sliding groove (301), a limiting block (303) slidably installed in the limiting groove (302), a support block (304) fixedly connected to one side surface of the limiting block (303), a shock absorbing spring (305) fixedly connected to the upper and lower side surfaces of the support block (304), the end of the shock absorbing spring (305) fixedly connected to the sliding groove (301), a support rod (306) rotatably installed on the support block (304), and a support block (307) rotatably installed at the bottom end of the support rod (306).

3. The semiconductor plant anti-microseismic structure according to claim 2, characterized in that: The surfaces of the support block 1 (304) and the support block 2 (307) are both provided with a rotation groove (308), and a rotation shaft 1 (309) is rotatably installed on both sides of the rotation groove (308). The two ends of the support rod (306) are provided with rotation holes (310), and the two ends of the support rod (306) are rotatably connected to the support block 1 (304) and the support block 2 (307) through the rotation holes (310), and the bottom of the support block 2 (307) is fixedly connected with a positioning rod (311).

4. The semiconductor plant anti-microseismic structure according to claim 1, characterized in that: The shock absorbing mechanism (7) comprises a shock absorbing base plate (701) slidably mounted in the shock absorbing groove (6); shock absorbing thresholds (702) are fixedly mounted at both ends of the factory wall (2); the shock absorbing thresholds (702) and the bottom of the inner wall of the factory wall (2) are both provided with buffer grooves (703); a spring damper (704) is mounted around the outer shell edge of the shock absorbing base plate (701); and the end of the spring damper (704) is fixedly connected in the buffer groove (703).

5. The semiconductor plant anti-microseismic structure according to claim 4, characterized in that: The bottom surface of the shock-absorbing bottom plate (701) is fixedly connected with a supporting base column (705), a sand layer (706) is provided in the shock-absorbing groove (6), and the supporting base column (705) is inserted and connected in the sand layer (706).

6. The semiconductor plant anti-microseismic structure according to claim 1, characterized in that: The bottom surface of the factory building roof (5) is rotatably mounted with a second rotating shaft (8), and the factory building roof (5) is rotatably mounted in the mounting groove (4) via the second rotating shaft (8) at the bottom.

7. The semiconductor plant anti-microseismic structure according to claim 3, characterized in that: The bottom of the positioning rod (311) is fixedly connected to a support plate (9).

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