Lining and process chamber

Abstract

The utility model discloses a liner and a process chamber, and relates to the technical field of semiconductor preparation, the side wall of the disclosed liner is provided with a wafer conveying port, the wafer conveying port comprises a first area and a second area which are communicated with each other, the second area protrudes out of the first area along the axial direction of the liner, and the second area is arranged along the circumferential direction of the liner. The ratio of the size of the first area to the size of the second area ranges from 2: 1 to 3: 1. According to the wafer conveying device, the space utilization rate of the wafer conveying opening can be increased by carrying out area division on the wafer conveying opening, and the size of the wafer conveying opening can be reduced as much as possible under the condition that a machined part and a transfer mechanism normally pass through the wafer conveying opening, so that the influence of airflow around the wafer conveying opening on the distribution uniformity of process gas is reduced, and the process uniformity is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a liner and a process chamber. Background Art

[0002] During the semiconductor processing process, the surface of the semiconductor needs to be coated, etched and other processes are usually performed in a process chamber. A liner is provided in the process chamber, and the process gas is distributed in the process space surrounded by the liner.

[0003] In the related art, in order to facilitate the workpiece to enter and exit the process space surrounded by the liner, a film transfer port is opened on the side wall of the liner, and a transfer mechanism is used to clamp the workpiece through the film transfer port. However, the airflow at the film transfer port will affect the distribution of process gas in the process space, thereby affecting the uniformity of the process and causing a decrease in the yield rate of semiconductors. Utility Model Content

[0004] The present application discloses a liner and a process chamber to solve the problem in the related art that the airflow at the film transfer port affects the distribution of process gas in the process space, thereby affecting the process uniformity.

[0005] In order to solve the above technical problems, this application is implemented as follows:

[0006] In a first aspect, an embodiment of the present application discloses a liner, wherein a side wall of the liner is provided with a film transmission port, wherein the film transmission port includes a first area and a second area which are interconnected, wherein the second area protrudes from the first area along the axial direction of the liner, and along the circumferential direction of the liner, a ratio between a size of the first area and a size of the second area ranges from 2:1 to 3:1.

[0007] In a second aspect, an embodiment of the present application discloses a process chamber, including a chamber body and the above-mentioned liner.

[0008] The technical solution adopted in this application can achieve the following technical effects:

[0009] The liner disclosed in the embodiment of the present application improves the related technology, and divides the film transmission port on the side wall of the liner into a first area and a second area that are interconnected. The second area protrudes from the first area along the axial direction of the liner, and along the circumferential direction of the liner, the ratio between the size of the first area and the size of the second area is in the range of 2:1-3:1. Among them, the first area is used for the passage of the workpiece, and the second area is used for the passage of the transfer mechanism. By dividing the film transmission port into areas, the space utilization rate of the film transmission port can be improved. Under the condition of ensuring that the workpiece and the transfer mechanism pass through the film transmission port normally, the size of the film transmission port can be reduced as much as possible, thereby reducing the influence of the airflow around the film transmission port on the process uniformity. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 This is one of the structural schematic diagrams of the first liner disclosed in the embodiment of the present application;

[0011] Figure 2 This is the second structural schematic diagram of the first liner disclosed in the embodiment of the present application;

[0012] Figure 3 This is one of the structural schematic diagrams of the second liner disclosed in the embodiment of the present application;

[0013] Figure 4 This is the second structural schematic diagram of the second liner disclosed in the embodiment of the present application;

[0014] Figure 5 This is one of the structural schematic diagrams of the third liner disclosed in the embodiment of the present application;

[0015] Figure 6 This is the second structural schematic diagram of the third liner disclosed in the embodiment of the present application;

[0016] Figure 7 This is one of the structural schematic diagrams of the fourth liner disclosed in the embodiment of the present application;

[0017] Figure 8 This is the second structural schematic diagram of the fourth liner disclosed in the embodiment of the present application;

[0018] Fig. 9 This is a schematic structural diagram of the fifth liner disclosed in the embodiment of the present application;

[0019] Fig.10 It is a schematic diagram of the partial structure of the liner disclosed in the embodiment of the present application;

[0020] Fig.11 A schematic diagram of the structure of a process chamber disclosed in an embodiment of the present application;

[0021] Fig.12 This is a schematic diagram of the structure of the liner disclosed in the embodiment of the present application;

[0022] Fig.13 This is a distribution diagram of etching rates at different locations on a wafer disclosed in an embodiment of the present application.

[0023] Description of reference numerals:

[0024] 100- lining, 110- film transfer port, 111- first area, 112- second area, 113- third area, 114- rounded structure;

[0025] 200-workpiece;

[0026] 300-transportation agency;

[0027] 400 - process chamber, 410 - chamber body, 420 - support seat. DETAILED DESCRIPTION

[0028] In order to make the purpose, technical solution and advantages of the present application clearer, the technical solution of the present application will be clearly and completely described below in combination with the specific embodiments of the present application and the corresponding drawings. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present application.

[0029] The terms "first", "second", etc. in the specification and claims of this application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the terms used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described herein, and the objects distinguished by "first", "second", etc. are generally of the same type, and the number of objects is not limited. For example, the first object can be one or more.

[0030] The technical solutions disclosed in various embodiments of the present application are described in detail below in conjunction with the accompanying drawings.

[0031] In the related art, semiconductor coating, etching and other processes are carried out in a process chamber. The coating process refers to the deposition of a thin film on the surface of the semiconductor by physical vapor deposition, chemical vapor deposition and other methods. The etching process is to combine chemical reaction with physical etching to perform high-precision processing on the surface of the semiconductor to form the desired pattern. The etching process may include ICP (Inductively Coupled Plasma) etching. The above processes all require filling the process space formed by the liner with process gas. In addition, taking the ICP etching process as an example, plasma is also distributed in the process gas. The liner is usually a cylindrical structure. In order to facilitate the workpiece to enter and exit the process space, a film transfer port is opened on the side wall of the liner, and a transfer mechanism (such as a manipulator) is used to clamp the workpiece through the film transfer port. The film transfer port is in the shape of a regular strip.

[0032] Taking wafer processing as an example, a robot is required to clamp the wafer and enter and exit the process space surrounded by the liner through the wafer transfer port. The robot needs to perform translation, lifting and other operations in the process of clamping the wafer. Since the robot also needs to pass through the wafer transfer port, and the axial size of the robot along the liner is often larger than the size of the wafer, in order to take into account the robot and the wafer passing through the wafer transfer port at the same time, the size of the wafer transfer port will be designed to be larger, and the size of the wafer transfer port is the same in the area where the robot does not need to pass and the area where the robot passes, which leads to a low space utilization rate of the wafer transfer port. However, the large size of the wafer transfer port will cause the airflow at the wafer transfer port to have a greater impact on the distribution of process gases in the process space, thereby affecting the uniformity of the process and causing a decrease in the yield rate of the wafer.

[0033] Based on the above, please refer to Figures 1 to 13 The embodiment of the present application discloses a liner 100, and the side wall of the liner 100 is provided with a film transfer port 110, and the workpiece 200 can be transferred into the process space surrounded by the liner 100 or transferred out of the process space through the transfer mechanism 300 and the film transfer port 110. The workpiece 200 may include materials such as plastic, semiconductor, glass, etc., and the transfer mechanism 300 may include a manipulator, an electrostatic suction cup, etc. A grid hole is provided at the bottom of the liner 100, and under the action of the exhaust device, the gas in the process space will flow downward through the grid hole. The film transfer port 110 adopts a partition design, and may include a first area 111 and a second area 112 that are interconnected, and the second area 112 protrudes from the first area 111 along the axial direction of the liner 100. The second area 112 may be provided on only one side of the first area 111, or the second area 112 may be provided on both sides of the first area 111.

[0034] Regarding the first area 111 and the second area 112, the first area 111 is used for the workpiece 200 to pass through, and the second area 112 is used for the transfer mechanism 300 to pass through. In the embodiment of the present application, the robot transfers the wafer as an example. Please refer to Figure 1 and Figure 2 The first area 111 is in the shape of a long strip for the wafer to pass through. Since the wafer is relatively thin, the width of the first area 111 can be designed to be as small as possible to avoid the liner 100 from scratching the surface of the wafer. The width of the first area 111 is the axial dimension of the first area 111 along the liner 100. In order to allow the robot to pass through the film transfer port 110 smoothly, a raised second area 112 can be provided on the first area 111 for the robot to pass through. The size of the second area 112 is adapted to the robot. Since the robot only clamps a part of the wafer, the size of the second area 112 along the circumference of the liner 100 does not need to be too large and can be smaller than the size of the first area 111, thereby reducing the overall size of the film transfer port 110.

[0035] The second area 112 can be understood as a local protruding structure of the first area 111. The second area 112 can be located in the center of the first area 111, or in the left or right position of the first area 111. The specific selection can be made according to the relative position of the robot and the wafer. In addition, the axial and circumferential dimensions of the first area 111 and the second area 112 along the liner 100 can be determined according to the specific dimensions of the workpiece 200 and the transfer mechanism 300, and this embodiment of the application does not limit this.

[0036] Along the circumference of the liner 100, the ratio between the size of the first area 111 and the size of the second area 112 is in the range of 2:1-3:1. Compared with the solution of only setting a single area in the related art, it can be seen from the above ratio range that the size of the second area 112 along the circumference of the liner 100 is greatly reduced, and the overall area of ​​the film transfer port 110 is only 44%-73% of the related art, thereby reducing the influence of the airflow around the film transfer port 110 on the uniformity of the process gas distribution, thereby improving the uniformity of the process. It should be noted that the liner 100 can be a cylindrical structure, and the axial direction and circumferential direction of the liner 100 are the axial direction and circumferential direction of the cylindrical structure.

[0037] Taking ICP etching process as an example, Fig.13 The etching rate distribution at different positions of the wafer is shown. Compared with the old design in the related art, the area of ​​the film transfer port 110 is greatly reduced in the new design of the present application. It can be foreseen that the airflow change in the area near the film transfer port 110 will also be reduced accordingly. There are differences in the distribution of plasma near the area and far away from the area. If the distribution difference of plasma near the area and far away from the area can be reduced, the uniformity of plasma distribution can be improved to a certain extent, thereby reducing the difference in the etching rate distribution of the wafer. Since the edge area of ​​the wafer is more susceptible to the airflow near the film transfer port 110, according to the distribution of the etching rate at different positions of the wafer, it can be found that the etching rate at the edge area of ​​the entire wafer is significantly more concentrated by adopting the new design of the present application, especially the point near the position of the film transfer port 110, and the etching rate changes less compared with the old design as it moves to the center area, indicating that changing the size of the film transfer port 110 has a significant improvement in the uniformity of the wafer etching rate.

[0038] As described above, it can be known that the liner 100 disclosed in the embodiment of the present application improves the related art, and divides the film-transmitting port 110 on the side wall of the liner 100 into a first area 111 and a second area 112 which are interconnected, and the second area 112 protrudes from the first area 111 along the axial direction of the liner 100, and along the circumferential direction of the liner 100, the size of the second area 112 is smaller than the size of the first area 111, wherein the first area 111 is used for the workpiece 200 to pass through, and the second area 112 is used for the transfer mechanism 300 to pass through. By dividing the film-transmitting port 110 into regions, the space utilization rate of the film-transmitting port 110 can be improved, and the size of the film-transmitting port 110 can be reduced as much as possible while ensuring that the workpiece 200 and the transfer mechanism 300 pass through the film-transmitting port 110 normally, thereby reducing the influence of the airflow around the film-transmitting port 110 on the uniformity of the distribution of the process gas, thereby improving the uniformity of the process. At the same time, the small size of the film transfer port 110 can also prevent the process gas from diffusing from the film transfer port 110 to the outside of the liner 100 and causing damage to the components below and accumulation of products.

[0039] Furthermore, the wafer transfer port 110 can be used for wafers of different specifications to enter and exit the liner. Taking a wafer with a diameter of 300 mm as an example, along the circumference of the liner 100, the size range of the first area 111 is 320 mm-350 mm, and the size range of the second area 112 is 114 mm-156 mm; along the axial direction of the liner 100, the size range of the first area 111 is 5 mm-10 mm, and the size range of the second area 112 is 10 mm-35 mm. The circumferential side of the first area 111 needs to reserve a certain amount of activity space for the wafer to avoid scratching the wafer; the circumferential side of the second area 112 needs to reserve a certain amount of activity space for the transfer mechanism 300 to avoid collision with the transfer mechanism 300.

[0040] Along the axial direction of the liner 100, the ratio of the size of the first area 111 to the size of the second area 112 is in the range of 1:6-1:2. Compared with the solution of only setting a single area in the related art, it can be seen from the above ratio range that the size of the first area 111 along the axial direction of the liner 100 is greatly reduced, and the overall area of ​​the film transfer port 110 is only 44%-73% of the related art, thereby reducing the influence of the airflow around the film transfer port 110 on the uniformity of the process gas distribution, thereby improving the uniformity of the process.

[0041] In some optional embodiments, the number of the second regions 112 may be one or two. When the number of the second region 112 is one, since there is only one second region 112 for the transfer mechanism 300 to pass through, the axial dimension of the second region 112 along the liner 100 is slightly larger.

[0042] like Figure 1 and Figure 2As shown, in the embodiment of the present application, the number of the second areas 112 is two, and the two second areas 112 are both located in the center of the first area 111, and are distributed on both sides of the first area 111 along the axial direction of the lining 100. The first area 111 and the two second areas 112 form a cross structure, which is convenient for the passage of the transfer mechanism 300, and can also ensure that the workpiece 200 is in the center position of the first area 111 to avoid scratches with the lining 100.

[0043] The sizes of the two second areas 112 can be the same and evenly distributed on both sides of the first area 111; considering that the distribution of the transfer mechanism 300 on both sides of the first area 111 may not be symmetrical, the sizes of the two second areas 112 may also be different, which can be specifically determined according to the relative position of the transfer mechanism 300 and the workpiece 200.

[0044] The edge contour of the second area 112 can be a straight line, a curve, or a combination of a straight line and a curve. Figure 3 and Figure 4 In the embodiment of the present application, the edge profile of the second region 112 may be an arc, and the two ends of the arc are respectively connected to the edges of the first region 111. The arc design can reduce the obstruction to the airflow inside the process space, making the airflow distribution more uniform and the airflow passing efficiency higher, thereby further improving the uniformity of the process.

[0045] On the basis of the cross-shaped film transmission port, in order to further improve the uniformity of process gas distribution inside the process space, please refer to Figure 5 and Figure 6 As shown, a third area 113 can also be provided on the film transfer port 110, and the third area 113 can be provided on the side of the second area 112 facing away from the bottom of the liner 100. Since the exhaust device is located at the bottom of the liner 100, the airflow as a whole flows from top to bottom in the process space of the liner 100. If a cross-shaped film transfer port is used, the airflow below the cross-shaped film transfer port will be denser and the airflow above will be sparser. By adding the third area 113 on the side of the second area 112 facing away from the bottom of the liner 100, the airflow accumulated below the cross-shaped film transfer port can pass through the third area 113, thereby making the airflow distribution above and below the cross-shaped film transfer port more uniform, further improving the uniformity of process gas distribution and process.

[0046] In order to avoid the size of the film-transmitting port 110 being too large, when designing the third area 113, the size of the third area 113 along the circumference of the liner 100 can be smaller than the size of the second area 112, while ensuring the airflow passing through, the size of the film-transmitting port 110 will not be too large to affect the uniformity of the process gas distribution. Based on the above solution of adding the third area 113 for airflow passing through, please refer to Figure 7 and Figure 8 , a third area 113 may be further provided on the side of the second area 112 toward the bottom of the liner 100. Since the airflow is accumulated below the film transfer port 110, the process gas density is relatively large, and the bottom of the liner 100 is a closed structure, the airflow is not easy to flow out, so the airflow can be led out through the third area 113, thereby improving the process gas distribution and the uniformity of the process.

[0047] Also, please refer to Fig. 9 , a third area 113 may be provided on both the side of the second area 112 facing away from the bottom of the liner 100 and the side of the second area 112 facing the bottom of the liner 100. On the one hand, more room for movement can be provided for the transfer mechanism 300 to improve the flexibility of the transfer mechanism 300; on the other hand, the speed of the gas flow from the liner 100 can be increased to prevent the process gas from accumulating locally in the liner 100.

[0048] Regarding the solution of adding the third area 113 on the upper and lower sides of the cross-shaped film transmission port, the size range of the third area 113 along the axial direction of the liner 100 is 3mm-5mm; along the circumferential direction of the liner 100, the size range of the third area 113 is 5mm-8mm. Fig.13 It can be seen from the simulation diagram of the etching rate distribution that the uniformity of the process gas distribution can be further improved.

[0049] Furthermore, if Fig.10 As shown, at least one of the first area 111, the second area 112 and the third area 113 is provided with a rounded structure 114. The rounded structure 114 facilitates the cleaning and maintenance of the liner 100, and can also reduce the airflow resistance to a certain extent, making the airflow distribution more uniform and the airflow passing efficiency higher.

[0050] Please refer to Figure 11 to Figure 12 The embodiment of the present application further discloses a process chamber 400 . The disclosed process chamber 400 may include a chamber body 410 and the above-mentioned liner 100 . The liner 100 is disposed in the chamber body 410 .

[0051] Since the process chamber 400 adopts the above-mentioned liner 100, the uniformity of the distribution of the process gas in the process chamber 400 can be improved, thereby improving the uniformity of the process. At the same time, the small-sized film transfer port 110 can also prevent the process gas from diffusing from the film transfer port 110 to the outside of the liner 100, thereby causing damage to the components below the process chamber 400 and accumulation of products. Further, the process chamber can also include a support seat 420, which is also arranged in the chamber body 410. The bottom of the liner 100 is provided with a hollow area, which can be circular, elliptical, etc., and the specific shape can be selected according to the side profile of the support seat 420. The support seat 420 is arranged in the above-mentioned hollow area, and at least part of the support seat 420 extends into the liner. The upper part of the support seat 420 is provided with a bearing surface, and the bearing surface is used to bear the workpiece 200.

[0052] Along the axial direction of the liner 100, the lower edge of the first region 111, that is, the edge of the first region 111 close to the bottom of the liner 100, is not lower than the bearing surface. When the workpiece 200 passes through the film transfer port 110, when the workpiece 200 contacts the lower edge of the first region 111, it is the lowest position that the workpiece 200 can reach. Since this position is not lower than the bearing surface of the support seat 420, it can avoid the workpiece 200 from colliding with the support seat 420 when passing through the film transfer port 110, thereby improving the reliability of the process chamber.

[0053] The above embodiments of the present application focus on describing the differences between the various embodiments. As long as the different technical features between the various embodiments are not contradictory, they can be combined to form more specific embodiments. Considering the simplicity of the text, they will not be repeated here.

[0054] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

Claims

1. A lining, characterized in that: The side wall of the liner (100) is provided with a film transmission port (110), and the film transmission port (110) includes a first area (111) and a second area (112) which are interconnected, and the second area (112) protrudes from the first area (111) along the axial direction of the liner (100), and along the circumferential direction of the liner (100), the ratio between the size of the first area (111) and the size of the second area (112) is in the range of 2:1-3:

1.

2. The liner according to claim 1, characterized in that When the liner (100) is suitable for wafers with a diameter of 300 mm, along the circumference of the liner (100), the size of the first region (111) ranges from 320 mm to 350 mm, and the size of the second region (112) ranges from 114 mm to 156 mm.

3. The liner according to claim 1, characterized in that Along the axial direction of the liner (100), the ratio between the size of the first region (111) and the size of the second region (112) is in the range of 1:6-1:

2.

4. The liner according to claim 1, characterized in that When the liner (100) is suitable for wafers with a diameter of 300 mm, along the axial direction of the liner (100), the size of the first region (111) ranges from 5 mm to 10 mm, and the size of the second region (112) ranges from 10 mm to 35 mm.

5. The liner according to claim 1, characterized in that The film transmission port (110) comprises two second regions (112), and the two second regions (112) are respectively arranged on both sides of the first region (111) along the axial direction of the liner (100).

6. The liner according to any one of claims 1 to 5, characterized in that: The edge of the second area (112) is arc-shaped.

7. The liner according to claim 5, characterized in that The film transmission port (110) also includes a third area (113), and the third area (113) is provided on at least one of the side of the second area (112) facing away from the bottom of the liner (100) and the side of the second area (112) facing the bottom of the liner (100). Along the circumference of the liner (100) and along the axial direction of the liner (100), the size range of the third area (113) is 3mm-5mm, and along the circumference of the liner (100), the size range of the third area (113) is 5mm-8mm.

8. The liner according to claim 7, characterized in that The third area (113) is provided on both the side of the second area (112) facing away from the bottom of the liner (100) and the side of the second area (112) facing the bottom of the liner (100).

9. The liner according to claim 7, characterized in that At least one of the first region (111), the second region (112) and the third region (113) is provided with a rounded corner structure (114).

10. A process chamber, characterized in that: It comprises a chamber body (410) and the liner (100) according to any one of claims 1 to 9.

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