Atomic layer deposition apparatus
By designing a relatively rotating configuration in the atomic layer deposition equipment, the problem of poor film formation uniformity in the mass-production equipment is solved, and better film adhesion, defect reduction, production efficiency improvement and cost reduction are achieved.
Patent Information
- Application Number
- CN202421369059.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-14
- Publication Date
- 2025-03-18
- Estimated Expiration
- 2034-06-14
AI Technical Summary
In mass-production equipment, due to the small vehicle spacing and complex airflow disturbance, existing atomic layer deposition equipment leads to poor film formation uniformity and inter-sheet uniformity, especially in optical laminated film applications, the thickness uniformity requirements are higher.
Atomic layer deposition equipment is designed, through the configuration of a carrier, a vacuum duct, a lower cover plate, a carrier, an upper cover plate and an intake duct, the process gas supplied from the intake duct and the substrate carried by the carrier rotate relative to each other, and a centrifugal force is generated to improve film formation uniformity.
Through the relative rotation design, the film formation uniformity and film adhesion are significantly improved, defects are reduced, production efficiency is improved, and costs are reduced.
Smart Images
Figure CN222631551U_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to the technical field of atomic layer deposition, and more specifically to an atomic layer deposition device. Background Art
[0002] Atomic layer deposition (ALD) is a thin film deposition technology based on self-limiting reactions, which can precisely control the thickness and composition of thin films at the nanometer level. It is widely used in electronics, optics, catalysis, display panels, new energy and other fields.
[0003] Existing single-chip microcomputers improve film uniformity by designing airflow holes and improving temperature. These methods can well control the distribution of precursors. However, when applied to mass production equipment, the spacing between substrates in the carrier is too small, and the disturbance of airflow between substrates is also relatively complex, so the uniformity within and between the sheets is relatively poor, especially when applied to optical laminated films, which require higher thickness uniformity. Therefore, it is necessary to design and improve the equipment accordingly to improve the uniformity of film formation on multiple substrates. Utility Model Content
[0004] In view of the problems existing in the background technology, an object of the present disclosure is to provide an atomic layer deposition device which can improve film formation uniformity.
[0005] Another object of the present disclosure is to provide an atomic layer deposition device that can improve film adhesion.
[0006] Yet another object of the present disclosure is to provide an atomic layer deposition apparatus that can reduce defects.
[0007] Another object of the present disclosure is to provide an atomic layer deposition device that can improve production efficiency.
[0008] Another object of the present disclosure is to provide an atomic layer deposition device that can reduce costs.
[0009] Thus, an atomic layer deposition device is provided, which includes a process outer chamber, a carrier, a carrying device, a lower cover plate, an upper cover plate, a vacuum pipe, and an air inlet pipe; the carrier has a process inner chamber that is open at the top and bottom and closed front, back, left, and right, and the carrier is used to suspend and support multiple upright and spaced-apart substrates to be atomically layer deposited in the process inner chamber; the carrying device is installed in the process outer chamber, and the carrying device includes a lifting mechanism, which is arranged in the process outer chamber and provides lifting; the lower cover plate is installed on the carrying device, and the lower cover plate is used to lift the carrier from the bottom when it rises into place under the drive of the lifting mechanism of the carrying device to lift the carrier so that the carrier rises and the process inner chamber is sealed from the bottom; the vacuum pipe is provided. The vacuum pipe is passed through the lower cover plate and the carrying device and opens on the upper surface of the lower cover plate. The vacuum pipe is used to communicate with the process cavity after the lower cover plate closes the process cavity; the upper cover plate is installed in the process outer cavity, and the upper cover plate is used to press the carrier from above and close the process cavity from above when the lower cover plate and the carrier rise to the position driven by the lifting mechanism of the carrying device; the air intake pipe is arranged on the upper cover plate and the process outer cavity, and the air intake pipe is used to supply process gas to the process cavity after the upper cover plate closes the process cavity from above; the carrying device, the vacuum pipe, the lower cover plate, the carrier, the upper cover plate and the air intake pipe are configured to enable the process gas supplied by the air intake pipe and the substrate carried by the carrier to rotate relative to each other.
[0010] The beneficial effects of the present disclosure are as follows.
[0011] In the atomic layer deposition equipment according to the present disclosure, since the supporting device, vacuum pipe, lower cover plate, carrier and upper cover plate and the air inlet pipe are configured to allow the process gas supplied by the air inlet pipe and the substrate carried by the carrier to rotate relative to each other, the film formation uniformity and film layer adhesion can be improved, defects can be reduced, production efficiency can be improved, and costs can be reduced. It can be widely used in semiconductors, microelectronics, optoelectronics, micro-nano manufacturing and other fields.
[0012] Improved film uniformity: helps ensure that the coating material is evenly distributed on the substrate. Due to the centrifugal force generated by rotation, the coating material can be more evenly covered on the substrate surface, avoiding problems such as uneven film thickness or defects.
[0013] Improved film adhesion: Substrate rotation can increase the contact area between the coating material and the substrate surface, thereby improving the adhesion of the film layer. Based on the relative rotation, the coating material can better penetrate into the tiny bumps on the substrate surface and form a tighter bond.
[0014] Reduce defects: Rotating relative to each other helps reduce defects that may occur during the coating process, such as pinholes, bubbles or impurities. This is because the rotation allows the coating material to better penetrate into every corner of the substrate surface, reducing the possibility of defects, which helps to improve the quality and performance of the coating.
[0015] Improve production efficiency: Based on relative rotation, the coating process can be accelerated, thereby improving production efficiency. By optimizing the rotation speed and coating parameters, the required film thickness and performance can be obtained in a shorter time.
[0016] Reduce costs: Based on the relative rotation, the waste of coating materials can also be reduced; based on the relative rotation, during the coating process, the coating materials can be more fully utilized, reducing the accumulation and waste of materials at the edges or corners. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] Figure 1 is a plan view of an example of an atomic layer deposition apparatus according to the present disclosure, wherein neither the upper cover plate nor the lower cover plate contacts the carrier.
[0018] Figure 2 yes Figure 1 A plan view showing that both the upper cover plate and the lower cover plate of the carrier are in contact.
[0019] Figure 3 It is a three-dimensional schematic diagram of an upper cover plate, a lower cover plate, a carrier and a locking mechanism.
[0020] Figure 4 is a schematic plan view of another example of an atomic layer deposition apparatus according to the present disclosure.
[0021] The reference numerals are described as follows:
[0022] 1000 atomic layer deposition equipment 17 air intake pipe
[0023] D1 up and down direction 18 bearing
[0024] D2 front and rear direction 19 locking mechanism
[0025] D3 left and right direction 191 upper card slot
[0026] 11 process outer cavity 192 lower card slot
[0027] 111 top wall 193 upper clamp
[0028] 12 carriers 194 lower clips
[0029] 121 process cavity M1 up and down movement mechanism
[0030] 122 Upper flange M2 front and rear movement mechanism
[0031] 123 lower flange M3 block
[0032] 124 support bar 195 upper sensor
[0033] 13 Carrying device 196 Lower sensor
[0034] 131 lifting mechanism 20 lower roller
[0035] 132 Rotating mechanism 21 Left and right rollers
[0036] 14 Lower cover 22 Rotating motor
[0037] 15 upper cover plate 23 air homogenizing mechanism
[0038] 16 vacuum pipes 2000 substrates DETAILED DESCRIPTION
[0039] The accompanying drawings show embodiments of the present disclosure, and it will be understood that the disclosed embodiments are merely examples of the present disclosure, and the present disclosure can be implemented in various forms. Therefore, the specific details disclosed herein should not be interpreted as limiting, but merely as the basis for the claims and as a representative basis for teaching ordinary technicians in the field to implement the present disclosure in various ways.
[0040] Reference Figures 1 to 4 According to the present disclosure, the atomic layer deposition device 1000 includes an outer process chamber 11 , a carrier 12 , a carrying device 13 , a lower cover plate 14 , an upper cover plate 15 , a vacuum pipe 16 , and an air inlet pipe 17 .
[0041] The carrier 12 has a process cavity 121 which is open at the top and bottom and closed at the front, back, left and right. The carrier 12 is used to suspend and support multiple substrates 2000 to be deposited with atomic layers, which are standing and spaced from each other, in the process cavity 121. The carrier 13 is installed in the process cavity 11. The carrier 13 includes a lifting mechanism 131, which is arranged in the process cavity 11. The lifting mechanism 131 provides lifting. The lower cover plate 14 is installed on the carrier 13. The lower cover plate 14 is used to lift the carrier 12 from the bottom when it rises to the position driven by the lifting mechanism 131 of the carrier 13 so that the carrier 12 rises and closes the process cavity 121 from the bottom. The vacuum pipe 16 is arranged through the lower cover plate 14 and the carrier 13 and opens on the upper surface of the lower cover plate 14. The vacuum pipe 16 is used to communicate with the process cavity 121 after the lower cover plate 14 closes the process cavity 121. The upper cover plate 15 is installed in the process outer chamber 11. The upper cover plate 15 is used to press the carrier 12 from above and seal the process inner chamber 121 from above when the lower cover plate 14 and the carrier 12 are driven by the lifting mechanism 131 of the carrier 13 to rise to their positions. The air inlet pipe 17 is provided on the upper cover plate 15 and the process outer chamber 11. The air inlet pipe 17 is used to supply process gas to the process inner chamber 121 after the upper cover plate 15 seals the process inner chamber 121 from above. The carrier 13, the vacuum pipe 16, the lower cover plate 14, the carrier 12, the upper cover plate 15 and the air inlet pipe 17 are configured to allow the process gas supplied by the air inlet pipe 17 and the substrate 2000 carried by the carrier 12 to rotate relative to each other.
[0042] In the atomic layer deposition equipment 1000 according to the present disclosure, since the supporting device 13, the vacuum pipe 16, the lower cover plate 14, the carrier 12 and the upper cover plate 15 and the air inlet pipe 17 are configured to allow the process gas supplied by the air inlet pipe 17 and the substrate 2000 supported by the carrier 12 to rotate relative to each other, the uniformity of film formation and the adhesion of the film layer can be improved, defects can be reduced, production efficiency can be increased, and costs can be reduced. It can be widely used in semiconductors, microelectronics, optoelectronics, micro-nano manufacturing and other fields.
[0043] Improved film uniformity: helps ensure that the coating material is evenly distributed on the substrate 2000. Due to the centrifugal force generated by the rotation, the coating material can be more evenly covered on the surface of the substrate 2000, avoiding problems such as uneven film thickness or defects.
[0044] Improve film adhesion: The rotation of the substrate 2000 can increase the contact area between the coating material and the surface of the substrate 2000, thereby improving the adhesion of the film. Based on the relative rotation, the coating material can better penetrate into the tiny bumps on the surface of the substrate 2000, forming a tighter bond.
[0045] Reducing defects: Rotating relative to each other helps reduce defects that may occur during the coating process, such as pinholes, bubbles or impurities. This is because the rotation allows the coating material to better penetrate into every corner of the surface of the substrate 2000, reducing the possibility of defects, which helps to improve the quality and performance of the coating.
[0046] Improve production efficiency: Based on relative rotation, the coating process can be accelerated, thereby improving production efficiency. By optimizing the rotation speed and coating parameters, the required film thickness and performance can be obtained in a shorter time.
[0047] Reduce costs: Based on the relative rotation, the waste of coating materials can also be reduced; based on the relative rotation, during the coating process, the coating materials can be more fully utilized, reducing the accumulation and waste of materials at the edges or corners.
[0048] In one example, if Figure 1 and Figure 2 As shown, the carrier 13 further includes a rotating mechanism 132. The rotating mechanism 132 is connected to the lifting mechanism 131, and the rotating mechanism 132 can provide rotation in a horizontal plane; the lower cover plate 14 is fixedly connected to the rotating mechanism 132, so as to rotate under the drive of the rotating mechanism 132; the carrier 12 can be fixedly connected with the lower cover plate 14 and the upper cover plate 15; the upper cover plate 15 can rotate in a horizontal plane relative to the air intake duct 17. In this case, the air intake duct 1 remains stationary, while the rotating mechanism 132, the lower cover plate 14, the carrier 12, the substrate 2000 and the upper cover plate 15 rotate.
[0049] Furthermore, if Figure 1 and Figure 2 As shown, the atomic layer deposition equipment 1000 also includes a bearing 18, which is installed between the upper cover plate 15 and the air inlet pipe 17 and installed on the top wall 111 of the process outer chamber 11, so that when the upper cover plate 15 rotates driven by the rotating mechanism 132, the air inlet pipe 17 remains stationary.
[0050] like Figure 3 As shown, in one example, the atomic layer deposition apparatus 1000 further includes a locking mechanism 19 , which is disposed between the carrier 12 and the upper cover plate 15 and the lower cover plate 14 , so as to lock the carrier 12 , the upper cover plate 15 and the lower cover plate 14 together.
[0051] like Figure 3 As shown, specifically, the locking mechanism 19 includes an upper card slot 191, a lower card slot 192, an upper card clip 193, and a lower card clip 194; the upper card slot 191 and the lower card slot 192 are respectively arranged at the upper and lower parts of the carrier 12; the upper card clip 193 is arranged on the upper cover plate 15, and the upper card clip 193 is used to cooperate with the upper card slot 191 to fix the carrier 12 and the upper cover plate 15 together; the lower card clip 194 is arranged on the lower cover plate 14, and the lower card clip 194 is used to cooperate with the lower card slot 192 to fix the carrier 12 and the lower cover plate 14 together.
[0052] like Figure 1 , Figure 2 and Figure 4 As shown, in one example, the locking mechanism 19 further includes an upper sensor 195 and a lower sensor 196. The upper sensor 195 is disposed in the process outer chamber 11, and the upper sensor 195 is used to sense the relative position of the carrier 12 and the upper cover plate 15 so as to communicate that the upper card clip 193 moves to fit into the upper card slot 191 after the carrier 12 contacts the upper cover plate 15;
[0053] The lower sensor 196 is disposed in the process outer chamber 11 , and is used to sense the relative position of the carrier 12 and the lower cover plate 14 to communicate that the lower card clip 194 moves to fit into the upper card slot 191 after the lower cover plate 14 contacts the carrier 12 .
[0054] Reference Figure 1 , Figure 2 and Figure 4The atomic layer deposition apparatus 1000 further includes a lower roller 20 and left and right side rollers 21. The lower roller 20 is used to support (or even transport) the carrier 12 from below the left and right sides of the carrier 12 when the carrier 12 enters the process outer chamber 11; the left and right side rollers 21 are used to clamp (or even transport) the carrier 12 from the left and right sides of the carrier 12 when the carrier 12 enters the process outer chamber 11; the size of the lower cover plate 14 in the left and right direction D3 is smaller than the spacing between the lower rollers 20 in the left and right direction D3 and the spacing between the left and right side rollers 21 in the left and right direction D3; the carrier 12 has two upper flanges 122 protruding in opposite directions along the front-to-back direction D2 and two lower flanges 123 protruding in opposite directions along the front-to-back direction D2 and spaced apart from the two upper flanges 122 in the up-down direction D1; the upper clamping groove 191 is provided on each upper flange 122; the lower clamping groove 192 is provided on each lower flange 123.
[0055] Furthermore, if Figure 3 As shown, the upper card slot 191 opens downward and opens to the outside of the front-to-back direction D2; the lower card slot 192 opens upward and opens to the outside of the front-to-back direction D2; the upper card clip 193 and the lower card clip 194 each include an up-down movement mechanism M1, a front-to-back movement mechanism M2 and a card block M3: the up-down movement mechanism M1 is arranged at a corresponding one of the upper cover plate 15 and the lower cover plate 14; the front-to-back movement mechanism M2 is connected to the up-down movement mechanism M1 to move up and down driven by the up-down movement mechanism M1, and the front-to-back movement mechanism M2 is communicated with a corresponding one of the upper sensor 195 and the lower sensor 196; the card block M3 is connected to the front-to-back movement mechanism M2 to move in the front-to-back direction D2 driven by the front-to-back movement mechanism M2 and is inserted into the corresponding upper card slot 191 or the lower card slot 192, and the front-to-back movement mechanism M2 is communicated with a corresponding one of the upper sensor 195 and the lower sensor 196.
[0056] In another example, if Figure 4 As shown, the upper cover plate 15 is fixedly mounted on the top wall 111 of the process outer chamber 11 and is stationary; the atomic layer deposition equipment 1000 also includes a bearing 18 and a rotating motor 22; the bearing 18 is installed between the upper cover plate 15 and the air inlet pipe 17 and is installed on the top wall 111 of the process outer chamber 11; the rotating motor 22 is installed on the top of the outer surface of the process outer chamber 11, and the rotating motor 22 is used to provide rotation; the air inlet pipe 17 is installed on the rotating motor 22 and the bearing 18, so as to rotate relative to the upper cover plate 15 driven by the rotating motor 22 and the bearing 18.
[0057] Furthermore, if Figure 4As shown, the atomic layer deposition apparatus 1000 further includes a gas homogenizing mechanism 23; the gas homogenizing mechanism 23 is installed in the bearing 18 and connects the gas inlet pipe 17 and the process inner chamber 121, and the gas homogenizing mechanism 23 is used to uniformly supply the process gas supplied by the gas inlet pipe 17 to the process inner chamber 121. By including the gas homogenizing mechanism 23, the precursor attached to the substrate 2000 is made more uniform, thereby improving the uniformity of film formation of multiple substrates 2000.
[0058] like Figure 1 , Figure 2 and Figure 4 As shown, in one example, the carrier 12 is provided with a plurality of support bars 124, which are disposed in the process chamber 121 and are used to support the standing substrate 2000 from below and both sides around the circumference of the standing substrate 2000. Thus, the stability of the standing substrate 2000 is improved. In addition, the plurality of support bars 124 form point supports for each substrate 2000.
[0059] The above detailed description is used to describe multiple exemplary embodiments, but this document is not intended to be limited to the explicitly disclosed combinations. Therefore, unless otherwise stated, the various features disclosed herein can be combined together to form multiple additional combinations that are not shown for the sake of simplicity.
Claims
1. An atomic layer deposition device, characterized in that: The atomic layer deposition device (1000) comprises an outer process chamber (11), a carrier (12), a carrying device (13), a lower cover plate (14), an upper cover plate (15), a vacuum pipe (16), and an air intake pipe (17); The carrier (12) has a process inner cavity (121) which is open at the top and bottom and closed at the front, back, left and right. The carrier (12) is used to suspend and support a plurality of substrates (2000) to be deposited with atomic layers and which are standing and spaced apart from each other in the process inner cavity (121); The carrying device (13) is installed in the process outer chamber (11), and the carrying device (13) includes a lifting mechanism (131). The lifting mechanism (131) is arranged in the process outer chamber (11), and the lifting mechanism (131) provides lifting; The lower cover plate (14) is installed on the carrier device (13), and the lower cover plate (14) is used to lift the carrier (12) from below when it is raised to a position driven by the lifting mechanism (131) of the carrier device (13) so as to lift the carrier (12) and close the process cavity (121) from below; The vacuum pipe (16) is provided through the lower cover plate (14) and the carrying device (13) and is opened on the upper surface of the lower cover plate (14). The vacuum pipe (16) is used to communicate with the process cavity (121) after the lower cover plate (14) closes the process cavity (121); The upper cover plate (15) is installed in the process outer chamber (11), and the upper cover plate (15) is used to press the carrier (12) from above and close the process inner chamber (121) from above when the lower cover plate (14) and the carrier (12) are lifted into place under the drive of the lifting mechanism (131) of the carrier device (13); An air inlet pipeline (17) is arranged on the upper cover plate (15) and the process outer chamber (11), and the air inlet pipeline (17) is used to supply process gas to the process inner chamber (121) after the upper cover plate (15) closes the process inner chamber (121) from above; The carrying device (13), the vacuum pipe (16), the lower cover plate (14), the carrier (12), the upper cover plate (15) and the air inlet pipe (17) are configured to enable the process gas supplied by the air inlet pipe (17) and the substrate (2000) carried by the carrier (12) to rotate relative to each other.
2. The atomic layer deposition device according to claim 1, characterized in that: The carrying device (13) further comprises a rotating mechanism (132); The rotating mechanism (132) is connected to the lifting mechanism (131), and the rotating mechanism (132) can provide rotation in a horizontal plane; The lower cover plate (14) is fixedly connected to the rotating mechanism (132) so as to rotate under the drive of the rotating mechanism (132); The carrier (12) can be fixedly connected with the lower cover plate (14) and the upper cover plate (15); The upper cover plate (15) can rotate in a horizontal plane relative to the air intake duct (17).
3. The atomic layer deposition device according to claim 2, characterized in that: The atomic layer deposition apparatus (1000) further includes a bearing (18), The bearing (18) is installed between the upper cover plate (15) and the air inlet pipe (17) and is installed on the top wall (111) of the process outer chamber (11) so that when the upper cover plate (15) rotates driven by the rotating mechanism (132), the air inlet pipe (17) remains stationary.
4. The atomic layer deposition device according to claim 3, characterized in that: The atomic layer deposition apparatus (1000) further comprises a locking mechanism (19), The locking mechanism (19) is arranged between the carrier (12) and the upper cover plate (15) and the lower cover plate (14) to lock the carrier (12) and the upper cover plate (15) and the lower cover plate (14) together.
5. The atomic layer deposition device according to claim 4, characterized in that: The locking mechanism (19) comprises an upper card slot (191), a lower card slot (192), an upper card clip (193), and a lower card clip (194); The upper card slot (191) and the lower card slot (192) are respectively arranged at the upper part and the lower part of the carrier (12); An upper clamp (193) is disposed on the upper cover plate (15), and the upper clamp (193) is used to cooperate with the upper clamping groove (191) to fix the carrier (12) and the upper cover plate (15) together; The lower clamp (194) is disposed on the lower cover plate (14), and the lower clamp (194) is used to cooperate with the lower clamping groove (192) to fix the carrier (12) and the lower cover plate (14) together.
6. The atomic layer deposition device according to claim 5, characterized in that: The locking mechanism (19) further includes an upper sensor (195) and a lower sensor (196); The upper sensor (195) is arranged in the process outer chamber (11), and the upper sensor (195) is used to sense the relative position of the carrier (12) and the upper cover plate (15) so as to communicate that the upper card clip (193) moves and fits into the upper card slot (191) after the carrier (12) and the upper cover plate (15) come into contact; The lower sensor (196) is arranged in the process outer chamber (11), and is used to sense the relative position of the carrier (12) and the lower cover plate (14) so as to communicate the lower card clamp (194) to fit into the upper card slot (191) after the lower cover plate (14) and the carrier (12) come into contact.
7. The atomic layer deposition device according to claim 5, characterized in that: The atomic layer deposition device (1000) further comprises a lower roller (20) and left and right side rollers (21). The lower roller (20) is used to support the carrier (12) from below the left and right sides of the carrier (12) when the carrier (12) enters the process outer chamber (11); The left and right rollers (21) are used to clamp the carrier (12) from the left and right sides of the carrier (12) when the carrier (12) enters the process outer chamber (11); The size of the lower cover plate (14) in the left-right direction (D3) is smaller than the spacing between the lower rollers (20) in the left-right direction (D3) and the spacing between the left and right side rollers (21) in the left-right direction (D3); The carrier (12) has two upper flanges (122) protruding in opposite directions along the front-rear direction (D2) and two lower flanges (123) protruding in opposite directions along the front-rear direction (D2) and spaced apart from the two upper flanges (122) in the up-down direction (D1); An upper clamping groove (191) is provided on each upper flange (122); The lower clamping groove (192) is arranged on each lower flange (123).
8. The atomic layer deposition device according to claim 1, characterized in that: The upper card slot (191) opens downward and opens to the outside in the front-rear direction (D2); The lower card slot (192) opens upward and opens to the outside in the front-rear direction (D2); The upper clamp (193) and the lower clamp (194) each include an up-and-down direction movement mechanism (M1), a front-and-back direction movement mechanism (M2) and a clamping block (M3): The up-down movement mechanism (M1) is arranged on a corresponding one of the upper cover plate (15) and the lower cover plate (14); The front-to-back direction movement mechanism (M2) is connected to the up-down direction movement mechanism (M1) so as to move up-down under the drive of the up-down direction movement mechanism (M1), and the front-to-back direction movement mechanism (M2) is in communication connection with a corresponding one of the upper sensor (195) and the lower sensor (196); The card block (M3) is connected to the front-to-back direction movement mechanism (M2) so as to move in the front-to-back direction (D2) driven by the front-to-back direction movement mechanism (M2) and be inserted into the corresponding upper card slot (191) or lower card slot (192). The front-to-back direction movement mechanism (M2) is in communication connection with a corresponding one of the upper sensor (195) and the lower sensor (196).
9. The atomic layer deposition apparatus according to claim 1, characterized in that: The upper cover plate (15) is fixedly mounted on the top wall (111) of the process outer chamber (11) and is immovable; The atomic layer deposition device (1000) further includes a bearing (18) and a rotating motor (22); The bearing (18) is installed between the upper cover plate (15) and the air inlet pipe (17) and is installed on the top wall (111) of the process outer chamber (11); The rotating motor (22) is installed on the top of the outer surface of the process outer chamber (11), and the rotating motor (22) is used to provide rotation; The air intake duct (17) is mounted on the rotating motor (22) and the bearing (18) so as to rotate relative to the upper cover plate (15) under the drive of the rotating motor (22) and the bearing (18).
10. The atomic layer deposition device according to claim 9, characterized in that: The atomic layer deposition device (1000) further includes a gas homogenizing mechanism (23); The gas homogenizing mechanism (23) is installed in the bearing (18) and is connected to the gas inlet pipeline (17) and the process inner chamber (121). The gas homogenizing mechanism (23) is used to uniformly supply the process gas supplied by the gas inlet pipeline (17) to the process inner chamber (121).