Synthesizer

Abstract

The synthesis device comprises a synthesis furnace, a supporting assembly, a synthesis container, a heating mechanism and a vacuum mechanism. Arsenic particles are placed in the lower cavity, a high-purity gallium solution is placed in the synthesis container, then the cover body is connected with the furnace body to seal the synthesis cavity, then the synthesis cavity is vacuumized through the vacuum mechanism, the synthesis container and the arsenic particles are heated through the heating mechanism after vacuumizing is completed, the arsenic particles generate arsenic steam, and the high-purity gallium solution is obtained. Arsenic steam enters the synthesis container through the air holes of the supporting assembly and the upper cavity and reacts with a gallium solution in the synthesis container to synthesize gallium arsenide polycrystals. According to the synthesis device, the synthesis cavity is vacuumized through the vacuum mechanism, and the cover body is detachably connected to the furnace body, so that gallium arsenide polycrystals can be taken out by detaching the cover body after the gallium arsenide polycrystals are synthesized, the synthesis furnace can be repeatedly used, and the synthesis cost of the gallium arsenide polycrystals is reduced.

Description

Technical Field

[0001] The present application belongs to the technical field of polycrystalline synthesis, and specifically relates to a synthesis device. Background Art

[0002] Gallium arsenide has a wide range of applications in high-frequency, high-speed, high-temperature and radiation-resistant microelectronic devices. To obtain gallium arsenide single crystal materials, it is necessary to first synthesize gallium arsenide polycrystalline raw materials. Since gallium arsenide is a binary compound, the vapor pressure of arsenic is high, and arsenic and gallium are easily oxidized, it is difficult to synthesize gallium arsenide that conforms to the stoichiometric ratio. At present, the synthesis of gallium arsenide polycrystals usually involves first loading arsenic and gallium into a crucible, then placing the crucible into a quartz tube, and then welding the quartz tube. After the synthesis is completed, the quartz tube needs to be opened. The quartz tube is a disposable consumable, which leads to high costs for gallium arsenide synthesis. Utility Model Content

[0003] The technical problem to be solved by the present application is that the cost of existing gallium arsenide synthesis is high. In order to solve the above technical problem, a low-cost synthesis device for synthesizing gallium arsenide polycrystals is provided.

[0004] The technical solution proposed in this application is:

[0005] A synthesis device, comprising:

[0006] A synthesis furnace, comprising a furnace body and a cover body, wherein the furnace body has a synthesis cavity, the cover body is detachably connected to the furnace body, and the cover body is used to seal the synthesis cavity;

[0007] A support component is arranged on the inner wall of the synthesis cavity, and the support component is provided with a vent hole;

[0008] A synthesis container is arranged on the support assembly, and the synthesis container and the support assembly separate the synthesis chamber into an upper chamber and a lower chamber, the air vent can communicate the upper chamber and the lower chamber, and the opening of the synthesis container is communicated with the upper chamber;

[0009] A heating mechanism is arranged in the synthesis furnace;

[0010] The vacuum mechanism is connected to the synthesis furnace and communicated with the synthesis chamber.

[0011] Furthermore, the support assembly includes at least two support members, at least two of the support members are arranged at intervals on the inner wall of the synthesis chamber along the vertical direction, the synthesis container is supported on at least two of the support members, each of the support members is provided with an air vent, and the air vent runs through both sides of the support member along the vertical direction.

[0012] Furthermore, the support assembly also includes at least two flexible pads, the outer wall of the support member is connected to the inner wall of the synthesis chamber, at least two of the flexible pads are respectively arranged on at least two of the support members, and the flexible pads are located on the inner wall of the support member, and the flexible pads are in contact with the synthesis container.

[0013] Furthermore, the heating mechanism includes a first heating component and a second heating component, the first heating component is arranged in the synthesis furnace and corresponds to the synthesis container, and the second heating component is arranged at the bottom of the synthesis furnace.

[0014] Furthermore, the first heating assembly includes a plurality of first heating elements, which are arranged in the synthesis furnace at intervals along a vertical direction, and each of the first heating elements corresponds to the synthesis container.

[0015] Furthermore, the second heating assembly includes a plurality of second heating elements, and the plurality of second heating elements are arranged at intervals along a vertical direction at the bottom of the synthesis furnace.

[0016] Furthermore, the vacuum mechanism is connected to the cover body.

[0017] Furthermore, the vacuum mechanism includes a vacuum pipe, a vacuum machine and a vacuum valve. One end of the vacuum pipe is connected to the synthesis furnace and communicated with the synthesis chamber, and the other end is connected to the vacuum machine. The vacuum valve is arranged on the vacuum pipe.

[0018] Furthermore, the synthesis container includes a columnar portion and a conical portion, the conical portion is connected to one end of the columnar portion, the columnar portion and the conical portion are both hollow, and both ends of the columnar portion are penetrated.

[0019] A synthesis device, comprising:

[0020] A synthesis furnace, comprising a furnace body and a cover body, wherein the furnace body has a synthesis cavity, the cover body is sealably and detachably connected to the furnace body, and the cover body is used to seal the synthesis cavity;

[0021] A support component is arranged on the inner wall of the synthesis cavity, and the support component is provided with a vent hole;

[0022] A synthesis container is arranged on the support assembly and is used to carry the first substance. The synthesis container and the support assembly separate the synthesis chamber into an upper chamber and a lower chamber. The air vent can connect the upper chamber and the lower chamber. The synthesis container is connected to the upper chamber.

[0023] A first heating assembly, comprising a plurality of first heating elements, wherein the plurality of first heating elements are arranged in the synthesis furnace at intervals along a vertical direction, and each of the first heating elements corresponds to the synthesis container to heat the synthesis container;

[0024] A second heating assembly, comprising a plurality of second heating elements, which are arranged at intervals along a vertical direction at the bottom of the synthesis furnace and are used to heat the second substance in the lower cavity;

[0025] The vacuum mechanism is connected to the cover body and communicated with the synthesis chamber.

[0026] The synthesis device is used to place arsenic particles in the lower cavity, and a high-purity gallium solution in the synthesis container. Then, the cover is connected to the furnace body to seal the synthesis cavity. Next, the synthesis cavity is evacuated by a vacuum mechanism. After the evacuation is completed, the synthesis container and the arsenic particles are heated by a heating mechanism. The arsenic particles generate arsenic vapor, which enters the synthesis container through the air holes of the support component and the upper cavity, and reacts with the gallium solution in the synthesis container to synthesize gallium arsenide polycrystals. Since the synthesis cavity is evacuated by a vacuum mechanism in the synthesis device, and the cover is detachably connected to the furnace body, the gallium arsenide polycrystal can be taken out by removing the cover after synthesizing the gallium arsenide polycrystal. The synthesis furnace can be reused, thereby reducing the cost of synthesizing gallium arsenide polycrystals. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The accompanying drawings are used to provide further understanding of the present application and constitute a part of the specification. They are used to explain the present application together with the embodiments of the present application and do not constitute a limitation of the present application.

[0028] Figure 1 A schematic diagram of the structure of a synthesis device provided in one embodiment of the present application;

[0029] Figure 2 for Figure 1 A schematic structural diagram of the support assembly and synthesis container in the synthesis device is shown.

[0030] Description of labels:

[0031] 200, arsenic particles; 110, synthesis furnace; 111, furnace body; 112, cover body; 113, upper cavity; 114, lower cavity; 120, support assembly; 121, air vents; 130, synthesis container; 140, first heating assembly; 150, second heating assembly; 160, vacuum mechanism. DETAILED DESCRIPTION

[0032] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0033] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicating orientations or positional relationships are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0034] like Figure 1 and Figure 2 As shown, an embodiment of the present application provides a synthesis device, including a synthesis furnace 110 , a support assembly 120 , a synthesis container 130 , a heating mechanism and a vacuum mechanism 160 .

[0035] The synthesis furnace 110 includes a furnace body 111 and a cover body 112. The furnace body 111 has a synthesis chamber. The cover body 112 is detachably connected to the furnace body 111, and the cover body 112 is used to seal the synthesis chamber. The support assembly 120 is arranged on the inner wall of the synthesis chamber, and the support assembly 120 is provided with an air vent 121. The synthesis container 130 is located in the synthesis chamber and is arranged on the support assembly 120. The synthesis chamber is divided into an upper chamber 113 and a lower chamber 114 by the synthesis container 130 and the support assembly 120. The air vent 121 can connect the upper chamber 113 and the lower chamber 114. The opening of the synthesis container 130 is connected to the upper chamber 113. The vacuum mechanism 160 is connected to the synthesis furnace 110 and is connected to the synthesis chamber to evacuate the synthesis chamber.

[0036] It is understandable that, when applied to gallium arsenide polycrystalline synthesis, the first substance in the synthesis container 130 is a high-purity gallium solution, and the second substance in the lower cavity 114 is arsenic particles 200. In other embodiments, the first substance and the second substance may also be other substances, which are not limited here. The gallium solution and the arsenic particles 200 are used as examples for explanation below.

[0037] The synthesis device is used to place arsenic particles 200 in the lower cavity 114, and a high-purity gallium solution in the synthesis container 130. Then, the cover 112 is connected to the furnace body 111 to seal the synthesis chamber. Next, the synthesis chamber is evacuated by the vacuum mechanism 160. After the evacuation, the synthesis container 130 and the arsenic particles 200 are heated by the heating mechanism. The arsenic particles 200 generate arsenic vapor. The arsenic vapor enters the synthesis container 130 through the air holes 121 of the support assembly 120 and the upper cavity 113, and reacts with the gallium solution in the synthesis container 130 to synthesize gallium arsenide polycrystals. Since the synthesis chamber is evacuated by the vacuum mechanism 160 in the synthesis device, and the cover 112 is detachably connected to the furnace body 111, the gallium arsenide polycrystal can be taken out by removing the cover 112 after the gallium arsenide polycrystal is synthesized, and the synthesis furnace 110 can be reused, thereby reducing the cost of gallium arsenide polycrystal synthesis.

[0038] It should be explained that the synthesis container 130 is a crucible, and the synthesis device does not need to be equipped with a quartz tube, that is, the crucible does not need to be arranged in the quartz tube, and the polycrystalline material can be directly synthesized in the synthesis furnace 110. It can also be confirmed that the synthesis furnace 110 is placed vertically.

[0039] Furthermore, the vacuum mechanism 160 is connected to the cover 112, that is, the vacuum mechanism 160 is connected to the upper cavity 113. It should be noted that the vacuum mechanism 160 can also break the vacuum of the synthesis chamber, so as to facilitate the removal of the cover 112 after the polycrystalline synthesis is completed.

[0040] In one embodiment, the support assembly 120 includes at least two support members, at least two support members are arranged at intervals on the inner wall of the synthesis chamber in the vertical direction, and the synthesis container 130 is supported on at least two support members, so as to fix the synthesis container 130 in the middle position of the synthesis chamber in the vertical direction. Each support member is provided with an air vent 121, and the air vent 121 passes through both sides of the support member in the vertical direction, so as to conduct the space on both sides of the support member in the vertical direction.

[0041] by Figure 1Taking an example to illustrate, the support assembly 120 includes two support members, and the two support members are arranged at intervals in the vertical direction. The two support members are in contact with the outer wall of the synthesis container 130 to separate the synthesis chamber into an upper chamber 113 and a lower chamber 114. There is a gap between the synthesis container 130 and the inner wall of the synthesis chamber, so the two support members have a connecting gap. The air holes 121 of the two support members are connected to the connecting gap, and the air holes 121 of the upper support member are connected to the upper chamber 113, and the air holes 121 of the lower support member are connected to the lower chamber 114, so that the arsenic vapor generated in the lower chamber 114 can enter the upper chamber 113 through the air holes 121 and the connecting gap, and then enter the interior of the synthesis container 130 through the opening of the synthesis container 130 to react with the gallium solution.

[0042] In one embodiment, the support assembly 120 further includes at least two flexible pads, which are respectively disposed on at least two support members, and the outer side walls of the support members are connected to the inner wall of the synthesis chamber, and the flexible pads are located on the inner side walls of the support members, and the flexible pads are used to contact the synthesis container 130, thereby preventing the outer surface of the synthesis container 130 from being scratched. It can be understood that the flexible pads are made of high temperature resistant material.

[0043] In one embodiment, the synthesis container 130 includes a columnar portion and a conical portion, the conical portion is connected to one end of the columnar portion, the columnar portion and the conical portion are both hollow, and both ends of the columnar portion are penetrated. In this way, a gallium arsenide polycrystalline material rod with a conical bottom and a cylindrical top can be directly synthesized in the synthesis container 130. Further, the support assembly 120 is supported on the outer surface of the columnar portion. Similarly, in other embodiments, the synthesis container 130 and its internal cavity can also be other shapes, which can be set according to needs and are not limited here.

[0044] In one embodiment, the vacuum mechanism 160 includes a vacuum pipe and a vacuum machine, one end of the vacuum pipe is connected to the synthesis furnace 110 and communicates with the synthesis chamber, and the other end is connected to the vacuum machine to evacuate the synthesis chamber through the vacuum machine. Further, the vacuum mechanism 160 also includes a vacuum valve, which is arranged on the vacuum pipe to control the on and off of the vacuum pipe.

[0045] In one embodiment, the heating mechanism includes a first heating component 140 and a second heating component 150. The first heating component 140 is disposed in the synthesis furnace 110 and corresponds to the synthesis container 130, and is used to heat the first substance in the synthesis container 130. The second heating component 150 is disposed at the bottom of the synthesis furnace 110, and is used to heat the second substance in the lower cavity 114.

[0046] In one embodiment, the first heating assembly 140 includes a plurality of first heating elements, which are arranged in the synthesis furnace 110 at intervals along the vertical direction, and each of the first heating elements corresponds to the synthesis container 130 to heat the synthesis container 130 .

[0047] In one embodiment, the second heating assembly 150 includes a plurality of second heating elements, which are vertically spaced apart at the bottom of the synthesis furnace 110 to heat the arsenic particles 200 in the lower chamber 114 .

[0048] Specifically, the first heating element and the second heating element are both heating wires. Figure 1 In the illustrated embodiment, the number of the first heating elements is five, and the number of the second heating elements is three.

[0049] In order to facilitate understanding of the technical solution of this application, Figure 1 The synthesis process of the synthesis device in the above embodiment is described:

[0050] First, the arsenic particles 200 are placed at the bottom of the synthesis chamber, and then the synthesis container 130 carrying the high-purity gallium solution is placed on two supports. Next, the synthesis chamber is sealed by the cover 112, and the synthesis chamber is evacuated by a vacuum machine. After the evacuation is completed, the vacuum valve is closed to prevent the subsequent arsenic vapor from escaping.

[0051] Next, the synthesis container 130 and the arsenic particles 200 are heated by all the first heating elements and the second heating elements respectively for 5-9 hours until the temperature at the bottom of the synthesis chamber reaches 613°C-800°C and the temperature at the synthesis container 130 reaches 1250°C-1260°C. This process is the heating stage. Since the temperature at the synthesis container 130 is relatively high, the heating area of ​​the first heating assembly 140, i.e., the synthesis container 130, is defined as a high temperature area, and the heating area of ​​the second heating assembly 150, i.e., the bottom of the synthesis chamber, is defined as a low temperature area.

[0052] Next, the synthesis stage is entered, that is, in this stage, arsenic vapor enters the synthesis container 130 through the air vent 121 and the upper cavity 113 to react with the gallium solution. In the synthesis stage, the low temperature zone is maintained at 613°C-800°C, and the high temperature zone is divided into 5 temperature zones corresponding to the 5 first heating elements. The five temperature zones are gradually cooled from top to bottom, and each temperature zone takes 1-2 hours to cool down to 1000°C-1150°C. After all temperature zones have completed the cooling, the cooling stage is entered, and the high temperature zone and the low temperature zone are cooled at the same time. The cooling time is 4-6 hours, and the temperature of the high temperature zone is reduced to below 600°C, and the temperature of the low temperature zone is reduced to below 400°C.

[0053] It should be noted that solid high-purity gallium can be placed in the synthesis container 130 at the beginning, and then evacuated and heated to melt into a high-purity gallium solution, so as to avoid oxidation of the high-purity gallium.

Claims

1. A synthesis device, characterized in that: include: A synthesis furnace, comprising a furnace body and a cover body, wherein the furnace body has a synthesis cavity, the cover body is detachably connected to the furnace body, and the cover body is used to seal the synthesis cavity; A support component is arranged on the inner wall of the synthesis cavity, and the support component is provided with a vent hole; A synthesis container is arranged on the support assembly, and the synthesis container and the support assembly separate the synthesis chamber into an upper chamber and a lower chamber, the air vent can communicate the upper chamber and the lower chamber, and the opening of the synthesis container is communicated with the upper chamber; A heating mechanism is arranged in the synthesis furnace; The vacuum mechanism is connected to the synthesis furnace and communicated with the synthesis chamber.

2. The synthesis device according to claim 1, characterized in that The support assembly includes at least two support members, at least two of which are arranged at intervals on the inner wall of the synthesis chamber along the vertical direction, and the synthesis container is supported on at least two of the support members. Each of the support members is provided with an air vent, and the air vent runs through both sides of the support member along the vertical direction.

3. The synthesis device according to claim 2, characterized in that: The support assembly also includes at least two flexible pads, the outer wall of the support member is connected to the inner wall of the synthesis chamber, at least two of the flexible pads are respectively arranged on at least two of the support members, and the flexible pads are located on the inner wall of the support member, and the flexible pads are in contact with the synthesis container.

4. The synthesis device according to claim 1, characterized in that The heating mechanism comprises a first heating component and a second heating component. The first heating component is arranged in the synthesis furnace and corresponds to the synthesis container. The second heating component is arranged at the bottom of the synthesis furnace.

5. The synthesis device according to claim 4, characterized in that: The first heating assembly includes a plurality of first heating elements, which are arranged in the synthesis furnace at intervals along a vertical direction, and each of the first heating elements corresponds to the synthesis container.

6. The synthesis device according to claim 4, characterized in that: The second heating assembly includes a plurality of second heating elements, and the plurality of second heating elements are arranged at intervals along a vertical direction at the bottom of the synthesis furnace.

7. The synthesis device according to claim 1, characterized in that The vacuum mechanism is connected to the cover body.

8. The synthesis device according to claim 1, characterized in that The vacuum mechanism comprises a vacuum pipe, a vacuum machine and a vacuum valve. One end of the vacuum pipe is connected to the synthesis furnace and communicated with the synthesis chamber, and the other end is connected to the vacuum machine. The vacuum valve is arranged on the vacuum pipe.

9. The synthesis device according to claim 1, characterized in that: The synthesis container comprises a columnar portion and a conical portion, wherein the conical portion is connected to one end of the columnar portion, the columnar portion and the conical portion are both hollow, and both ends of the columnar portion are penetrated.

10. A synthesis device, characterized in that: include: A synthesis furnace, comprising a furnace body and a cover body, wherein the furnace body has a synthesis cavity, the cover body is detachably connected to the furnace body, and the cover body is used to seal the synthesis cavity; A support component is arranged on the inner wall of the synthesis cavity, and the support component is provided with a vent hole; A synthesis container is arranged on the support assembly and is used to carry the first substance. The synthesis container and the support assembly separate the synthesis chamber into an upper chamber and a lower chamber. The air vent can connect the upper chamber and the lower chamber. The synthesis container is connected to the upper chamber. A first heating assembly, comprising a plurality of first heating elements, wherein the plurality of first heating elements are arranged in the synthesis furnace at intervals along a vertical direction, and each of the first heating elements corresponds to the synthesis container to heat the synthesis container; A second heating assembly, comprising a plurality of second heating elements, which are arranged at intervals along a vertical direction at the bottom of the synthesis furnace and are used to heat the second substance in the lower cavity; The vacuum mechanism is connected to the cover body and communicated with the synthesis chamber.

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