Resistance type silicon carbide crystal growing device

Abstract

The utility model discloses a resistance type silicon carbide crystal growing device which comprises a lower sealing frame, a shell is fixed at the top end of the lower sealing frame, a heating inner container is fixed at the bottom of the shell, and a graphite crucible body with the height smaller than that of the heating inner container is installed in the heating inner container in a sliding mode. The lower resistance type heating source is mounted in the lower sealing frame, and a graphite crucible cover is detachably mounted at the top end of the lower sealing frame and the top end of the heating inner container; the auxiliary transmission shaft is rotationally installed on the inner wall of one side of the heating inner container. The gear and rack lifting mechanism is arranged along the inner wall of one side of the heating inner container, the height size of the graphite crucible body is not influenced, the growth height of crystals in the crucible is not influenced, the Z-axis space in the growth device can be saved to the greatest extent, and the growth efficiency is improved. And the growth device can realize more efficient crystal growth in a limited space.

Description

Technical Field

[0001] The utility model relates to the technical field of crystal growth equipment, in particular to a resistive silicon carbide crystal growth device. Background Art

[0002] The resistive silicon carbide crystal growth device includes a heating system (resistive heating device), a gas phase transport system, a reaction chamber (graphite crucible) and a control system. The heating system uses a resistive heater to provide a high temperature environment. The gas phase transport system precisely controls the flow rate and concentration of carbon and silicon source gases to make them uniformly mixed in the reaction chamber and deposited on the substrate surface. The reaction chamber is the main space for the growth of silicon carbide crystals, and the control system is used to monitor and adjust the working status of each part. This type of growth device controls the concentration and flow rate of carbon and silicon in the gas phase under a high temperature environment, so that they are deposited on the substrate surface and chemically react, thereby achieving the growth of silicon carbide crystals. The entire process requires strict control of the temperature, gas flow rate and concentration in the reaction chamber to ensure the quality and size of the silicon carbide crystal growth;

[0003] For example, a silicon carbide crystal growth device disclosed in the authorization announcement number CN219670713U includes a heater, a crucible and a lifting assembly, the heater encloses a heating space, the crucible is accommodated in the heating space, the lifting assembly includes a base and a support member, the support member supports the crucible, and the support member is threadedly matched with the base, the support member is used to rotate relative to the base to adjust the height of the crucible in the heating space, and under the action of an external force, the support member applies a force to the support member so that the support member rotates relative to the base, thereby realizing the height adjustment of the crucible in the heating space, eliminating the need to configure a motor, but the lifting assembly in this technical solution occupies a large part of the Z-axis space area in the growth device, that is, the connecting shaft and the threaded column occupy a considerable part of the space, and during the crystal growth process, it is usually necessary to maintain a stable growth environment and parameters for a long time to ensure the quality and size of the crystal. If the lifting assembly occupies most of the Z-axis space, it will limit the height dimension of the graphite crucible and the growth height of the crystal in the crucible, thereby limiting the maximum size of the crystal and reducing the growth capacity of the growth device. Utility Model Content

[0004] The purpose of the utility model is to provide a resistive silicon carbide crystal growth device, in which a graphite crucible body is slidably installed in a heating liner, and a gear rack lifting mechanism for driving the graphite crucible body to change its own height is arranged on the inner wall of one side of the heating liner close to the opening position, and the gear rack lifting mechanism will not affect the height size of the graphite crucible and the growth height of the crystal in the crucible, so as to solve the problems raised in the above-mentioned background technology.

[0005] To achieve the above-mentioned purpose, the utility model provides the following technical solution: a resistive silicon carbide crystal growth device, comprising:

[0006] A lower sealing frame, wherein a shell is fixed on the top of the lower sealing frame, and a heating liner is fixed on the bottom of the shell, and a graphite crucible body with a height smaller than the heating liner is slidably mounted inside the heating liner;

[0007] A lower resistive heating source, the lower resistive heating source is installed inside a lower sealing frame, and a graphite crucible cover is detachably installed on the top of the lower sealing frame and the heating liner;

[0008] A secondary transmission shaft is rotatably mounted on the inner wall of one side of the heating liner, one end of the secondary transmission shaft is provided with a gear rack lifting mechanism for changing the Z-axis height of the graphite crucible body, a rotation drive source is installed on the outer wall of one side of the lower sealing frame, the output end of the rotation drive source is installed with a main transmission shaft and a sprocket transmission structure that are power-connected with the secondary transmission shaft, and a PLC control panel that is electrically connected to the rotation drive source and the input end of the lower resistive heating source is installed on the outer wall of one side of the outer shell.

[0009] Preferably, the lower resistive heating source includes an electric heating ring installed at the bottom center of the lower sealing frame, and an electric heating ring installed in the cavity space between the lower sealing frame and the lower resistive heating source, and the input end of the electric heating ring is electrically connected to the output end of the PLC control panel.

[0010] Preferably, a cavity is provided between the outer wall of the heating liner and the interior of the lower sealing frame, a plurality of S-shaped electric heating tubes distributed in a ring are installed inside the cavity, and the input end of the S-shaped electric heating tube is electrically connected to the output end of the PLC control panel.

[0011] Preferably, a graphite heat-resistant felt is installed on the inner wall of one side of the shell.

[0012] Preferably, an annular support platform is fixed to the bottom end of the graphite crucible body, and the outer diameter of the annular support platform is equal to the inner diameter of the inner heat conducting ring.

[0013] Preferably, the rotational drive source is a stepper motor, the output end of the stepper motor is fixedly connected to one end of the main transmission shaft through a coupling, and the sprocket transmission structure includes sprockets respectively installed on one end of the secondary transmission shaft and the main transmission shaft surface, and a chain wrapped around the two sprockets.

[0014] Preferably, the gear rack lifting mechanism includes a rectangular notch portion arranged on the outer wall of one side of the graphite crucible body, and a vertical rack fixed on the inner wall of one side of the rectangular notch portion. The gear rack lifting mechanism also includes a gear plate fixed on the top end of the auxiliary transmission shaft, and the gear plate and the vertical rack are meshed with each other.

[0015] Compared with the prior art, the beneficial effect of the utility model is that the resistive silicon carbide crystal growth device is provided with a gear rack lifting mechanism and a heating liner and other structures that cooperate with each other, and uses the gear rack lifting mechanism to drive the graphite crucible body to lift and lower, so as to control the height position of the graphite crucible body. Because the gear rack lifting mechanism is arranged along the inner wall of one side of the heating liner, it will not affect the height size of the graphite crucible body, nor will it affect the growth height of the crystal in the crucible. This design can save the Z-axis space in the growth device to the greatest extent, so that the growth device can achieve more efficient crystal growth in a limited space. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a three-dimensional structural schematic diagram of the utility model;

[0017] Figure 2 This is a schematic diagram of the main cross-sectional structure of the utility model;

[0018] Figure 3 The three-dimensional cross-sectional structure of the utility model is shown in FIG. Figure 1 ;

[0019] Figure 4 The three-dimensional cross-sectional structure of the utility model is shown in FIG. Figure 2 ;

[0020] Figure 5 It is a three-dimensional structural schematic diagram of the graphite crucible body of the utility model;

[0021] In the figure: 1. lower sealing frame; 2. outer shell; 3. lower resistive heating source; 301. electric heating ring; 302. inner heat conductive ring; 4. heating liner; 401. cavity; 402. S-shaped electric heating tube; 403. graphite heat-resistant felt; 5. graphite crucible cover; 6. graphite crucible body; 601. annular support platform; 7. secondary transmission shaft; 8. rotating drive source; 9. main transmission shaft; 10. gear rack lifting mechanism; 1001. rectangular notch; 1002. vertical rack; 1003. gear plate; 11. PLC control panel; 12. sprocket transmission structure. DETAILED DESCRIPTION

[0022] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0023] See also Figure 1-5The utility model provides an embodiment: a resistive silicon carbide crystal growth device, comprising a lower sealing frame 1, a shell 2 is fixed to the top of the lower sealing frame 1, and a heating liner 4 is fixed to the bottom of the shell 2, and a graphite crucible body 6 with a height smaller than the heating liner 4 is slidably installed inside the heating liner 4;

[0024] A lower resistive heating source 3 is installed inside the lower sealing frame 1. A graphite crucible cover 5 is detachably installed on the top of the lower sealing frame 1 and the heating liner 4;

[0025] A secondary transmission shaft 7, the secondary transmission shaft 7 is rotatably mounted on the inner wall of one side of the heating liner 4, one end of the secondary transmission shaft 7 is provided with a gear rack lifting mechanism 10 for changing the Z-axis height of the graphite crucible body 6, a rotation drive source 8 is installed on the outer wall of one side of the lower sealing frame 1, the output end of the rotation drive source 8 is installed with a main transmission shaft 9 and a sprocket transmission structure 12 for power connection with the secondary transmission shaft 7, and a PLC control panel 11 electrically connected to the rotation drive source 8 and the input end of the lower resistive heating source 3 is installed on the outer wall of one side of the shell 2;

[0026] The secondary transmission shaft 7 drives the graphite crucible body 6 to move up and down by means of the gear rack lifting mechanism 10, so as to control the height position of the graphite crucible body 6. In this process, the gear rack lifting mechanism 10 is arranged along the inner wall of one side of the heating liner 4, and it will not affect the height dimension of the graphite crucible body 6.

[0027] The lower resistive heating source 3 includes an electric heating ring 301 installed at the bottom center of the lower sealing frame 1, and an electric heating ring 301 installed in the cavity space between the lower sealing frame 1 and the lower resistive heating source 3, the input end of the electric heating ring 301 is electrically connected to the output end of the PLC control panel 11, a cavity 401 is provided between the outer wall of the heating liner 4 and the interior of the lower sealing frame 1, a plurality of S-shaped electric heating tubes 402 distributed in an annular shape are installed in the cavity 401, and the input end of the S-shaped electric heating tube 402 is electrically connected to the output end of the PLC control panel 11;

[0028] The electric heating ring 301 and the plurality of S-shaped electric heating tubes 402 distributed in an annular shape heat the bottom wall and the outer wall of the graphite crucible body 6 respectively, and the temperature distribution inside and outside the crucible can be controlled respectively, and the surface area of ​​the crucible is fully utilized for heating, which helps to achieve the temperature gradient and temperature uniformity required in the growth process of silicon carbide crystals, thereby improving the growth quality and uniformity of the crystals;

[0029] A graphite heat-resistant felt 403 is installed on the inner wall of one side of the outer shell 2. The graphite heat-resistant felt 403 has excellent heat insulation performance. When installed on the inner wall of the outer shell 2, it can effectively reduce the heat conduction to the outside, and reduce the heat dissipation loss of the inner tank. An annular support platform 601 is fixed to the bottom end of the graphite crucible body 6. The outer diameter of the annular support platform 601 is equal to the inner diameter of the inner heat-conducting ring 302. The design of equal outer diameter and inner diameter can ensure that the annular support platform 601 and the inner heat-conducting ring 302 fit closely, minimize thermal resistance, and thus improve the efficiency of heat conduction;

[0030] The rotation driving source 8 is a stepping motor, which cooperates with the gear rack lifting mechanism 10 to accurately adjust the height of the graphite crucible body 6, thereby controlling the growth height of the silicon carbide crystal;

[0031] The output end of the stepper motor is fixedly connected to one end of the main transmission shaft 9 through a coupling, the sprocket transmission structure 12 includes sprockets respectively installed on one end of the surface of the auxiliary transmission shaft 7 and the main transmission shaft 9, and a chain wound on the two sprockets, the gear rack lifting mechanism 10 includes a rectangular notch portion 1001 arranged on the outer wall of one side of the graphite crucible body 6, and a vertical rack 1002 fixed on the inner wall of one side of the rectangular notch portion 1001, and the gear rack lifting mechanism 10 also includes a gear plate 1003 fixed on the top end of the auxiliary transmission shaft 7, and the gear plate 1003 and the vertical rack 1002 are meshed with each other;

[0032] The rotary drive source 8 first drives the main transmission shaft 9 to rotate, so that the main transmission shaft 9 drives the secondary transmission shaft 7 and the gear plate 1003 to rotate through the sprocket transmission structure 12. At this time, the gear plate 1003 drives the vertical rack 1002 in the rectangular notch 1001 to move up and down, that is, the graphite crucible body 6 is moved up and down in the heating liner 4. The gear rack lifting mechanism 10 can provide a stable lifting movement to ensure that the height adjustment of the graphite crucible body 6 is stable and reliable, and the operator can easily adjust the height of the graphite crucible without complicated adjustment operations, which can save operation time and improve operation efficiency.

[0033] When the embodiment of the present application is used, the staff first pours the silicon carbide growth source powder to be processed and grown into the graphite crucible body 6, and then seals and installs the graphite crucible cover 5 at the top openings of the outer shell 2 and the graphite crucible body 6, so that the graphite crucible body 6 is in a sealed state. Then the staff turns on the lower resistive heating source 3 and the S-shaped electric heating tube 402 through the PLC control panel 11 to work. The lower resistive heating source 3 and the S-shaped electric heating tube 402 are respectively heated at the bottom end and the outer wall side of the graphite crucible body 6. By controlling the concentration and flow rate of carbon and silicon in the gas phase under a high temperature environment, the silicon carbide growth source powder is deposited on the substrate surface of the graphite crucible body 6 and a chemical reaction occurs, and gradually grows into large-sized silicon carbide crystals. In this process, in order to control the graphite crucible body 6 and the silicon carbide growth The height adjustment of the long source powder in the heating space, that is, the relative height position between the graphite crucible body 6 and the heating liner 4, the staff turns on the rotary drive source 8 through the PLC control panel 11 to work, and the rotary power of the rotary drive source 8 is transmitted to the secondary drive shaft 7 through the main transmission shaft 9 and the sprocket transmission structure 12, so that the secondary drive shaft 7 uses the gear rack lifting mechanism 10 to drive the graphite crucible body 6 to rise and fall, so as to control the height position of the graphite crucible body 6. In this process, the gear rack lifting mechanism 10 is arranged along the inner wall of one side of the heating liner 4, which will not affect the height size of the graphite crucible body 6, nor will it affect the growth height of the crystal in the crucible. This design can save the Z-axis space in the growth device to the greatest extent, so that the growth device can achieve more efficient crystal growth in a limited space.

Claims

1. A resistive silicon carbide crystal growth device, characterized in that: include: A lower sealing frame (1), wherein an outer shell (2) is fixed to the top of the lower sealing frame (1), and a heating liner (4) is fixed to the bottom of the outer shell (2), and a graphite crucible body (6) having a height less than the heating liner (4) is slidably mounted inside the heating liner (4); A lower resistive heating source (3), the lower resistive heating source (3) being installed inside the lower sealing frame (1), and a graphite crucible cover (5) being detachably installed on the top of the lower sealing frame (1) and the heating liner (4); A secondary transmission shaft (7), the secondary transmission shaft (7) is rotatably mounted on the inner wall of one side of the heating liner (4), one end of the secondary transmission shaft (7) is provided with a gear rack lifting mechanism (10) for changing the Z-axis height of the graphite crucible body (6), a rotation drive source (8) is installed on the outer wall of one side of the lower sealing frame (1), the output end of the rotation drive source (8) is installed with a main transmission shaft (9) and a sprocket transmission structure (12) for power connection with the secondary transmission shaft (7), and a PLC control panel (11) electrically connected to the rotation drive source (8) and the input end of the lower resistive heating source (3) is installed on the outer wall of one side of the outer shell (2).

2. A resistive silicon carbide crystal growth device according to claim 1, characterized in that: The lower resistive heating source (3) comprises an electric heating ring (301) installed at the center of the bottom of the lower sealing frame (1), and an electric heating ring (301) installed in the cavity space between the lower sealing frame (1) and the lower resistive heating source (3), wherein the input end of the electric heating ring (301) is electrically connected to the output end of the PLC control panel (11).

3. The resistive silicon carbide crystal growth device according to claim 1, characterized in that: A cavity (401) is provided between the outer wall of the heating liner (4) and the interior of the lower sealing frame (1), and a plurality of S-shaped electric heating tubes (402) distributed in a ring shape are installed inside the cavity (401), and the input end of the S-shaped electric heating tube (402) is electrically connected to the output end of the PLC control panel (11).

4. The resistive silicon carbide crystal growth device according to claim 1, characterized in that: A graphite heat-resistant felt (403) is installed on the inner wall of one side of the outer shell (2).

5. The resistive silicon carbide crystal growth device according to claim 2, characterized in that: An annular support platform (601) is fixed to the bottom end of the graphite crucible body (6), and the outer diameter of the annular support platform (601) is equal to the inner diameter of the inner heat conducting ring (302).

6. The resistive silicon carbide crystal growth device according to claim 1, characterized in that: The rotary drive source (8) is a stepper motor, the output end of which is fixedly connected to one end of the main transmission shaft (9) via a coupling, and the sprocket transmission structure (12) comprises sprockets respectively mounted on one end of the surface of the auxiliary transmission shaft (7) and the main transmission shaft (9), and a chain wound around the two sprockets.

7. The resistive silicon carbide crystal growth device according to claim 1, characterized in that: The gear rack lifting mechanism (10) comprises a rectangular notch portion (1001) arranged on an outer wall of one side of a graphite crucible body (6), and a vertical rack (1002) fixed on an inner wall of one side of the rectangular notch portion (1001). The gear rack lifting mechanism (10) further comprises a gear plate (1003) fixed on the top end of a secondary transmission shaft (7), and the gear plate (1003) and the vertical rack (1002) are meshed with each other.

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