Furnace cover of single crystal furnace

Abstract

The utility model discloses a furnace cover of a single crystal furnace. A laser etching device is arranged on the furnace cover, and laser of the laser etching device penetrates through a gap between an inner guide cylinder and a water-cooled jacket of the single crystal furnace to reach the surface of the single crystal silicon rod so as to etch the surface of the single crystal silicon rod. In the single crystal equal-diameter growth process, according to a coil base crystal length signal, the crystal length is fixed at intervals, and the surface of a crystal bar is etched through a laser etching device. And after crystal pulling is completed, the distance between the etching positions is measured, and the actual length of the single crystal corresponds to the data recording length. According to the utility model, the laser etching device is additionally arranged in the traditional single crystal furnace structure, so that the surface of the crystal is marked, the actual length of the single crystal silicon rod is effectively corresponding to the data recording length, and the length error is calibrated.

Description

TECHNICAL FIELD

[0001] The utility model relates to a single crystal furnace cover, can be used in single crystal furnace etc. length calibration of equal diameter process belongs to single crystal silicon production equipment technical field. BACKGROUND

[0002] With the rapid development of semiconductor technology, higher requirements are put forward for the quality of the czochralski silicon. Therefore, more detailed sampling analysis is required for the single crystal silicon. At present, in the growth process of the czochralski silicon, the lifting speed and the rotating speed of the single crystal silicon are mainly controlled through the pulling head and the soft shaft. The soft shaft of the single crystal furnace is affected by the temperature and the weight change of the single crystal silicon rod during the crystal pulling process, and the stretching deformation occurs during the crystal pulling process, resulting in the deviation between the actual length of the single crystal silicon rod and the data record length. After the sample selection according to the length result in the crystal pulling data, the sampling position deviates, and each detection result cannot be accurately corresponding to the crystal pulling data record, which brings difficulties to the comparative analysis of the detection result and the crystal pulling data. SUMMARY

[0003] The utility model discloses a single crystal furnace cover, can realize the marking to the crystal surface in the equal diameter process of single crystal silicon rod, through the measurement of each mark position interval, can correspond the actual length of single crystal silicon rod and data record length, calibrate length error.

[0004] In order to realize the above-mentioned purpose, the utility model adopts the following technical scheme:

[0005] A single crystal furnace cover is provided with a laser etching device, the laser of the laser etching device passes through the gap between the inner guide cylinder and the water cooling jacket of the single crystal furnace to reach the surface of the single crystal silicon rod, and the surface of the single crystal silicon rod is etched.

[0006] Further, the laser etching device is connected with the single crystal furnace control system, the single crystal furnace crystal length signal is read through the single crystal furnace control system, and the laser etching device is controlled to etch at intervals of fixed crystal length.

[0007] Further, the interval length of adjacent two etchings is 10-100mm.

[0008] The utility model has the advantages of:

[0009] The utility model realizes the marking on the crystal surface by increasing the laser etching device in the traditional single crystal furnace structure. In the equal diameter growth process of the single crystal silicon rod, according to the furnace table crystal length signal, at intervals of fixed crystal length, the laser etching device is used to etch on the surface of the single crystal silicon rod. After the crystal pulling is completed, the interval of each etching position is measured, so that the actual length of the single crystal silicon rod and the data record length can be effectively corresponding, the length error can be calibrated, and each detection result can be accurately corresponding to the crystal pulling data record, and the detection accuracy is improved. Attached Figure Description

[0010] Figure 1 This is a partial structural diagram of a single crystal furnace using the single crystal furnace cover of this utility model.

[0011] Figure 2 This is a diagram illustrating the deviation between the reference data length sampling in the comparative model and the actual position.

[0012] Figure 3 This shows the correspondence between the laser etching positions and the actual positions in the embodiment.

[0013] Figure Labels

[0014] 1. Single crystal silicon rod, 2. Inner guide tube, 3. Water cooling jacket, 4. Upper furnace cover, 5. Laser etching device, 6. Main heater, 7. Quartz crucible, 8. Silicon melt. Detailed Implementation

[0015] The present invention will be further described below with reference to the accompanying drawings and embodiments, but this does not imply any limitation on the scope of protection of the present invention.

[0016] like Figure 1 As shown, the single crystal furnace used for growing single crystal silicon rods 1 by the Czochralski method includes an upper furnace cover 4, a water-cooled jacket 3, an inner guide tube 2, a main heater 6, and a quartz crucible 7. The silicon melt 8 is contained inside the quartz crucible 7, and the main heater 6 is located outside the quartz crucible 7.

[0017] In this utility model, a laser etching device 5 is provided on the upper furnace cover 4. The laser emitted by the laser etching device 5 passes through the gap between the inner guide tube 2 and the water cooling jacket 3 of the single crystal furnace and reaches the surface of the single crystal silicon rod 1 to etch the surface of the single crystal silicon rod.

[0018] The laser etching device 5 is connected to the single crystal furnace control system. The single crystal furnace control system reads the crystal length signal of the single crystal furnace and controls the laser etching device to perform etching at fixed crystal length intervals.

[0019] Comparative Example

[0020] like Figure 2 As shown, during the pulling process of monocrystalline silicon rods, due to the stretching deformation of the flexible shaft, the data recording length of the monocrystalline silicon rod is greater than the actual length. The length was not calibrated, and sampling was performed on the monocrystalline silicon rod according to the data recording length, with the sampling position deviating from the actual position. Example

[0021] like Figure 3As shown, in the process of equal diameter growth of single crystal silicon rod, the laser of the laser etching device passes through the gap between the inner guide cylinder and the water cooling jacket to reach the surface of the single crystal silicon rod, and etching is performed according to the length signal of the furnace crystal and at an interval of 100 mm of the crystal length. The actual corresponding position of the interval of 100 mm length on the crystal rod in the crystal pulling data is the etch mark. According to the laser etch mark, the actual length of the single crystal is corresponded to the data record length. Subsequently, each detection result can be accurately corresponded to the crystal pulling data record, and the detection accuracy is improved.

Claims

1. A furnace cover for a single crystal furnace, characterized in that, A laser etching device is installed on the furnace cover. The laser of the laser etching device passes through the gap between the inner guide tube and the water cooling jacket of the single crystal furnace to reach the surface of the single crystal silicon rod and etch the surface of the single crystal silicon rod.

2. The furnace cover of the single crystal furnace according to claim 1, characterized in that, The laser etching device is connected to the single crystal furnace control system. The single crystal furnace control system reads the crystal length signal of the single crystal furnace and controls the laser etching device to perform etching at fixed crystal length intervals.

3. The single-crystal furnace cover according to claim 1 or 2, characterized in that, The interval between two adjacent etchings is 10-100 mm.

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