Silicon wafer passivation container and silicon wafer measuring device

Abstract

The utility model provides a silicon wafer passivation container and a silicon wafer measuring device, and relates to the technical field of silicon wafer quality detection.The silicon wafer passivation container comprises a container body, the container body is used for containing a conductive passivation solution and a silicon wafer, and the container body is provided with an anode electric connecting piece and a cathode electric connecting piece; one end of the anode electric connector and one end of the cathode electric connector extend into the container body, the other ends of the anode electric connector and the cathode electric connector are located on the outer side of the container body, and the end, located in the container body, of the anode electric connector is used for abutting against a silicon wafer. By electrifying the anode electric connector and the cathode electric connector, the silicon wafer forms an anodic oxidation reaction in the container body after being electrified, so that the silicon wafer can be quickly passivated, the time required for passivation is greatly shortened, the passivation efficiency is improved, and after the silicon wafer is passivated, the silicon wafer can be directly subjected to measurement operation such as minority carrier lifetime measurement of the silicon wafer, so that the measurement efficiency is improved. And therefore, the silicon wafer measurement efficiency is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of silicon wafer quality detection, in particular to a silicon wafer passivation container and a silicon wafer measuring device. BACKGROUND

[0002] In silicon wafer quality detection, minority carrier lifetime measurement of the silicon wafer is one of the important detection items. The minority carrier lifetime of the silicon wafer refers to the average existence time of minority carriers from generation to recombination. After non-equilibrium carriers (including minority carriers) are generated in the silicon wafer by external light injection or electrical injection, the non-equilibrium carriers will gradually disappear through recombination over time. The average duration of this process from generation to recombination is the minority carrier lifetime. The minority carrier lifetime is an important indicator for measuring the quality of the silicon wafer, and it has a key influence on the subsequent application of the silicon wafer in semiconductor device (such as solar cells, integrated circuit chips, etc.) manufacturing. Therefore, the measurement of the minority carrier lifetime of the silicon wafer is an important means for evaluating the quality and performance of the silicon wafer.

[0003] Meanwhile, the minority carrier lifetime of the silicon wafer is the result of different recombination mechanisms. The finally measured minority carrier lifetime is actually the effective lifetime of the entire sample, which is the net result of all recombination occurring on the surface and in the bulk of the silicon wafer. Therefore, in order to obtain the true bulk lifetime of the silicon wafer, it is necessary to use passivation methods to reduce the influence of surface recombination. The main surface passivation methods for the silicon wafer include chemical passivation and physical passivation. Common chemical passivation mainly includes hydrofluoric acid passivation and iodine alcohol / ethanol passivation. The iodine alcohol / ethanol passivation is widely used due to its easy operation, low cost and obvious passivation effect.

[0004] However, in the related art, the conventional passivation of the silicon wafer by iodine alcohol generally involves coating iodine alcohol on the surface of the silicon wafer, and a reaction process of 15 to 20 minutes is required for complete reaction and passivation, and then the measurement of the minority carrier lifetime can be performed. This reduces the efficiency of the measurement of the minority carrier lifetime of the silicon wafer, and the quality of the passivation process cannot be controlled, which may also affect the accuracy of the measurement of the minority carrier lifetime of the silicon wafer. CONTENT OF THE INVENTION

[0005] One or more embodiments of the present application aim to solve or at least partially alleviate the problem of how to improve the measurement efficiency of the silicon wafer.

[0006] One or more embodiments of the present application provide a silicon wafer passivation container, which comprises a container body for containing conductive passivation liquid and a silicon wafer. The container body is provided with an anode electrical connection and a cathode electrical connection. One end of the anode electrical connection and one end of the cathode electrical connection both extend into the container body, and the other end of the anode electrical connection and the other end of the cathode electrical connection are both located outside the container body. The one end of the anode electrical connection located in the container body is used for abutting against the silicon wafer.

[0007] Optionally, the container body is in a bag structure, and at least part of the container body is in a transparent structure.

[0008] Optionally, one side of the container body is provided with a self-sealing structure.

[0009] Optionally, the length of the anode electrical connector extending into the container body is greater than the length of the cathode electrical connector extending into the container body.

[0010] Compared with the prior art, the silicon wafer passivation container provided by the present application has the following technical effects, but is not limited to:

[0011] The silicon wafer passivation container provided by the present application can be applied to, for example, a silicon wafer minority carrier lifetime measurement operation. By providing a container body, the container body can contain a silicon wafer and a conductive passivation liquid for the silicon wafer, such as iodine alcohol passivation liquid with a conductive solvent. An anode electrical connector and a cathode electrical connector are provided in the container body, and both extend into the container body, that is, one end of each is in the container body and the other end is outside the container body. In use, the silicon wafer can be fully coated with the conductive passivation liquid in the container body, and the silicon wafer can be in contact with the anode electrical connector. By applying power to the anode electrical connector and the cathode electrical connector, the silicon wafer can form an anodic oxidation reaction in the container body after power is applied, so that the silicon wafer can quickly complete passivation, greatly shortening the time required for passivation, improving the passivation efficiency. After the silicon wafer is passivated, it can be directly used in, for example, a silicon wafer minority carrier lifetime measurement operation, thereby improving the efficiency of silicon wafer measurement and making the silicon wafer measurement process more controllable, which facilitates improving the accuracy of measurement.

[0012] In addition, one or more embodiments of the present application provide a silicon wafer measurement device, which comprises a measurement base and the above-mentioned silicon wafer passivation container. The measurement base is provided with an anode electrical connector seat and a cathode electrical connector seat. The anode electrical connector and the cathode electrical connector of the silicon wafer passivation container are respectively connected to the anode electrical connector seat and the cathode electrical connector seat.

[0013] Optionally, the silicon wafer measurement device further comprises a support and a light source. The bottom end of the support is connected to the measurement base, the light source is connected to the top end of the support, and the light source irradiates towards the measurement base.

[0014] Optionally, a first groove is formed between the anode electrical connector seat and the cathode electrical connector seat on the measurement base. A first signal receiver is arranged in the first groove.

[0015] Optionally, an optical filter is further arranged above the first signal receiver in the first groove. The groove wall of the first groove is provided with a stepped structure, and the optical filter is overlapped on the stepped structure.

[0016] Optionally, at least one second groove is further formed on the measuring base between the anode electrical connector and the cathode electrical connector, and a second signal receiver is arranged in the second groove.

[0017] Optionally, the silicon wafer measuring device further comprises a light-transmitting cover plate, which covers the light exit end of the light source.

[0018] Compared with the prior art, the silicon wafer measuring device provided in the application has the following technical effects, but is not limited thereto:

[0019] The silicon wafer measuring device and the silicon wafer passivation container provided in the application have the same advantages as the prior art, which will not be repeated here. Meanwhile, by arranging the measuring base, the measuring base can be used as a basic base component in the silicon wafer measuring operation, and by connecting the anode electrical connector and the cathode electrical connector of the silicon wafer passivation container with the anode electrical connector and the cathode electrical connector arranged on the measuring base, respectively, the silicon wafer can be directly passivated on the measuring base, and after the silicon wafer is passivated, the measurement of the minority carrier lifetime of the silicon wafer can be directly performed, thereby further improving the efficiency of the silicon wafer measurement and facilitating the operation of the operator.

[0020] In addition, one or more embodiments of the application provide a silicon wafer measuring system comprising the silicon wafer measuring device described above.

[0021] The silicon wafer measuring system and the silicon wafer measuring device provided in the application have the same advantages as the prior art, which will not be repeated here. BRIEF DESCRIPTION OF DRAWINGS

[0022] In order to more clearly illustrate the technical solutions of the embodiments of the application, the drawings of the embodiments will be briefly introduced below. Obviously, the drawings described below only relate to some embodiments of the application, but not limit the application.

[0023] Figure 1 FIG. 1 is a perspective view of a silicon wafer measuring device according to an embodiment of the application;

[0024] Figure 2 FIG. 2 is another perspective view of the silicon wafer measuring device according to the embodiment of the application;

[0025] Figure 3 FIG. 3 is a plan view of a container body according to an embodiment of the application;

[0026] Figure 4 FIG. 4 is another plan view of the container body according to the embodiment of the application.

[0027] EXPLANATION OF REFERENCE NUMERALS:

[0028] 10-container body, 11-anode electrical connector, 12-cathode electrical connector, 13-self-sealing structure, 20-measuring base, 21-anode electrical connector seat, 22-cathode electrical connector seat, 23-first groove, 231-step structure, 24-second groove, 30-bracket, 40-light source, 50-light-transmitting cover plate, 01-silicon wafer. DETAILED DESCRIPTION

[0029] In order to make the objectives, technical solutions, and advantages of the present application clearer, the following will be combined with the accompanying drawings for a clear and complete description of the technical solutions in the embodiments of the present application. It should be understood that the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments described in the present application, all other embodiments obtained by a person of ordinary skill in the art without creative effort shall fall within the scope of protection of the present application.

[0030] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs; the terminology used in the specification of the present application is only for the purpose of describing specific embodiments and is not intended to limit the present application; the terms “comprise”, “contain”, “have”, “with”, “include”, “contain” and the like in the specification and claims of the present application and the above description of drawings are open-ended words. Therefore, a method or device “comprising”, “containing”, “having” one or more steps or elements has one or more steps or elements, but is not limited to only having the one or more elements. The terms “first”, “second” and the like in the specification and claims of the present application or the above description of drawings are used to distinguish different objects, and are not used to describe a specific order or primary and secondary relationship. In addition, the terms “first”, “second” are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with “first”, “second” can explicitly or implicitly include one or more features. In the description of the present application, unless otherwise stated, the meaning of “multiple” is two or more.

[0031] In the description of the present application, it should be understood that the terms “center”, “transverse”, “length”, “width”, “upper”, “lower”, “front”, “rear”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inner”, “outer”, “axial”, “radial”, “circumferential” and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the indicated device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present application.

[0032] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," "linking," and "attachment" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0033] In this application, the term "implementation" means that a specific feature, structure, or characteristic described in connection with an implementation can be included in at least one implementation of this application. The appearance of this phrase in various places in the specification does not necessarily refer to the same implementation, nor is it a separate or alternative implementation mutually exclusive with other implementations. Those skilled in the art will understand, explicitly and implicitly, that the implementations described in this application can be combined with other implementations.

[0034] As mentioned above, it should be emphasized that when the term "comprising / including" is used in this specification, it is used to explicitly indicate the presence of the stated feature, integer, step, or component, but does not exclude the presence or addition of one or more other features, integers, steps, components, or groups of features, integers, steps, or components. As used in this application, the singular forms "a," "an," and "the" also include the plural forms, unless the context clearly indicates otherwise.

[0035] The terms “a” and “an” used in this specification may mean one, but may also be used interchangeably with “at least one” or “one or more”. The term “about” generally means the mentioned value plus or minus 10%, or more specifically, plus or minus 5%. The term “or” used in the claims means “and / or” unless it is explicitly stated that it refers only to alternatives.

[0036] In this application, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. Additionally, in this application, the character " / " generally indicates that the preceding and following related objects have an "or" relationship.

[0037] One or more embodiments of this application provide a silicon wafer passivation container. Figure 1 and Figure 3 An embodiment of the silicon wafer passivation container provided in this application.

[0038] like Figure 1 and Figure 3As shown, the silicon wafer passivation container comprises a container body 10 for containing the conductive passivation liquid and the silicon wafer 01, the container body 10 is provided with an anode electrical connector 11 and a cathode electrical connector 12, one end of the anode electrical connector 11 and one end of the cathode electrical connector 12 both extend into the container body 10, the other end of both are located outside the container body 10, and the end of the anode electrical connector 11 located in the container body 10 is used to abut against the silicon wafer 01.

[0039] In some embodiments, the conductive passivation liquid is a mixed solution of iodine and ethanol as the passivation liquid, while a certain amount of hydrogen iodide is added to increase the conductivity of the solution without causing pollution to the silicon wafer 01. At the same time, the dosage of the conductive passivation liquid added in the container body 10 can be increased or decreased according to actual needs when in use, the purpose is to be able to completely immerse the silicon wafer 01 in the form of sheet, and the shape of the container body 10 can also be adaptively designed according to the shape of the silicon wafer 01. In addition, the anode electrical connector 11 and the cathode electrical connector 12 can be respectively arranged at opposite ends of the container body 10 or both arranged at the same end of the container body 10, or both arranged at adjacent ends of the container body 10, preferably, as shown in Figure 3 The cathode electrical connector 12 and the anode electrical connector 11 are respectively arranged at the left and right ends of the container body 10, which is more convenient for the arrangement of the measuring device.

[0040] It should be noted that in use, the container body 10 can be powered through the wires and power supply, for example, in some embodiments, the measuring base 20 of the silicon wafer measurement device can accommodate and power the container body 10. Specifically, the measuring base 20 can be configured with a battery, or a direct current power source connected to the anode electrical connector 21 and the cathode electrical connector 22 provided on the measuring base 20 through wires, which can provide direct current power to the measuring base 20, and in turn provide direct current for the anodization of the silicon wafer 01 in the container body 10. By abutting the silicon wafer 01 against the anode electrical connector 11 extending into the container body 10, the silicon wafer 01 also acts as an anode for conduction, while being placed in the conductive passivation solution, which can accelerate the formation of a stable oxide film on the surface of the silicon wafer 01, thereby accelerating the passivation process of the silicon wafer 01. After passivation of the silicon wafer 01, the silicon wafer can be directly subjected to, for example, minority carrier lifetime measurement of the silicon wafer. For example, a light source 40 is provided above the measuring base 20 and irradiates the silicon wafer 01, and a terminal such as a computer is connected to the measuring base 20, and the minority carrier lifetime of the silicon wafer 01 is measured by, for example, a quasi-steady-state photoconductance lifetime measurement method. At the same time, the measuring base 20 can also be directly added to the silicon wafer minority carrier lifetime measurement automatic production line or the silicon wafer automatic processing production line for automatic measurement of the silicon wafer minority carrier lifetime, further improving the work efficiency. In addition, it should be understood that the silicon wafer passivation container can also be applied to other detection and measurement operations of the silicon wafer. Of course, the measurement operation requires prior passivation of the silicon wafer 01, and the power supply mode of the container body 10 can also be other, which is not limited here.

[0041] In at least one embodiment, the silicon wafer passivation container can be applied to, for example, silicon wafer minority carrier lifetime measurement operations. By providing the container body 10, the container body 10 can contain the silicon wafer 01 and the conductive passivation solution of the silicon wafer, such as iodine alcohol passivation solution with conductive solvent. And by providing the anode electrical connector 11 and the cathode electrical connector 12 in the container body 10, both of which extend into the container body 10, that is, one end is in the container body 10 and the other end is outside the container body 10. In use, the silicon wafer 01 can be fully coated with the conductive passivation solution in the container body 10, and the silicon wafer 01 can be contacted by abutting it against the anode electrical connector 11. The silicon wafer 01 can be quickly passivated by powering the anode electrical connector 11 and the cathode electrical connector 12, thereby forming an anodic oxidation reaction in the container body 10, greatly shortening the time required for passivation and improving the passivation efficiency. After passivation of the silicon wafer 01, it can be directly subjected to, for example, measurement of the minority carrier lifetime of the silicon wafer, thereby improving the efficiency of the silicon wafer measurement and making the silicon wafer measurement process more controllable and facilitating improvement of the measurement accuracy.

[0042] Optionally, as Figure 3 and Figure 4As shown, the container body 10 is in a bag structure, and at least part of the container body 10 is in a transparent structure

[0043] In some embodiments, the transparent structure of the container body 10 can be made of PE (polyethylene), PO (polyolefin), EVA (ethylene-vinyl acetate copolymer), etc. as long as it can be transparent and the passivation operation of the silicon wafer 01 inside the container body 10 can be observed. Preferably, the container body 10 is a transparent plastic bag, which is not only convenient to purchase and produce, but also convenient to lay and connect on the measurement base such as the measurement base 20, which is conducive to fully immersing the silicon wafer 01 in the conductive passivation solution inside, and convenient for passivation operation.

[0044] In at least one embodiment, by setting the container body 10 in a bag structure, that is, similar to a bag structure, it is convenient to hold the conductive passivation solution and the silicon wafer 01, and convenient for measurement operation. Moreover, by setting at least part of the container body 10 in a transparent structure, that is, the part corresponding to the placement of the silicon wafer 01 inside, it is convenient to observe the passivation progress of the silicon wafer 01, and convenient for the operator to use.

[0045] Optionally, as shown in Figure 3 and Figure 4 The container body 10 is provided with a self-sealing structure 13 on one side.

[0046] In some embodiments, the self-sealing structure 13 is a T-shaped sealing structure that can be quickly sealed, that is, a structure similar to the cooperation and sealing of the T-shaped clamping strip and the clamping groove provided at the bag opening of the sealing bag, which can be quickly packaged and operated. Convenient and fast, of course, the self-sealing structure 13 can also be other, for example, adhesive structure, which is not limited here.

[0047] In at least one embodiment, by providing the self-sealing structure 13 at the bag opening, it is convenient for packaging operation, improves the convenience of operation, and further improves the operation efficiency.

[0048] Optionally, as shown in Figure 3 and Figure 4 The length of the anode electrical connection 11 extending into the container body 10 is greater than the length of the cathode electrical connection 12 extending into the container body 10.

[0049] In some embodiments, the anode electrical connector 11 and the cathode electrical connector 12 are both graphite paper strips. By setting the anode electrical connector 11 and the cathode electrical connector 12 as graphite paper strips, not only can the electrical conduction be stabilized, but the material is also soft, which facilitates the silicon wafer 01 to be pressed on the graphite paper strips after being laid flat, thereby forming stable and reliable electrical conduction. Of course, the anode electrical connector 11 and the cathode electrical connector 12 can also be other conductive connectors, such as metal sheets or wires, etc. At the same time, the anode electrical connector 11 and the cathode electrical connector 12 are both partially inside the container body 10 and partially outside the container body 10, and the connection between the two and the container body 10 is a sealed connection to prevent the conductive passivation liquid from leaking out and improve the sealing performance of the container body 10.

[0050] In at least one embodiment, by setting the length of the anode electrical connector 11 extending into the container body 10 to be greater than the length of the cathode electrical connector 12 extending into the container body 10, it is convenient for the silicon wafer 01 to contact and conduct electricity with the anode electrical connector 11, which improves the convenience.

[0051] In addition, as shown in Figure 1 and Figure 2 One or more embodiments of the present application provide a silicon wafer measuring device, which includes a measuring base 20 and the above-mentioned silicon wafer passivation container. The measuring base 20 is provided with an anode electrical connector seat 21 and a cathode electrical connector seat 22, and the anode electrical connector 11 and the cathode electrical connector 12 of the silicon wafer passivation container are connected to the anode electrical connector seat 21 and the cathode electrical connector seat 22, respectively.

[0052] In some embodiments, the shape and structure of the measuring base 20 can be set according to the shape and structure of the above-mentioned container body 10, and the positions and structures of the anode electrical connector seat 21 and the cathode electrical connector seat 22 can be adapted to the anode electrical connector 11 and the cathode electrical connector 12 of the container body 10, for example, the anode electrical connector seat 21 and the cathode electrical connector seat 22 can be set as clamping seats or conductive columns through torsion spring structures, etc., and the specific structure is not limited here. In addition, the measuring base 20 can be configured with a battery or a direct current power source connected to the anode electrical connector seat 21 and the cathode electrical connector seat 22 through wires, etc., which can provide direct current power for the measuring base 20, thereby facilitating the silicon wafer passivation container to directly perform the silicon wafer passivation operation of anodic oxidation reaction on the measuring base 20, and further improving the operation efficiency.

[0053] In at least one embodiment, the silicon wafer measuring device has substantially the same advantages as the silicon wafer passivation container described above with respect to the prior art, and assembling the silicon wafer passivation container to the corresponding silicon wafer measuring device is a common technical means that should be understood by those skilled in the art, and will not be described here. At the same time, by providing the measuring base 20, the measuring base 20 can be used as a base component in the silicon wafer measuring operation, and by connecting the anode electrical connector 11 and the cathode electrical connector 12 of the silicon wafer passivation container to the anode electrical connector seat 21 and the cathode electrical connector seat 22 provided on the measuring base 20, respectively, the silicon wafer 01 can be directly passivated on the measuring base 20, and after the silicon wafer 01 is passivated, the measurement of the minority carrier lifetime of the silicon wafer can be directly performed, further improving the efficiency of the silicon wafer measurement and facilitating the operation of the operator.

[0054] Optionally, as shown in Figure 1 and Figure 2 , the silicon wafer measuring device further comprises a support 30 and a light source 40, the bottom end of the support 30 is connected to the measuring base 20, the light source 40 is connected to the top end of the support 30, and the light source 40 is directed towards the measuring base 20.

[0055] In some embodiments, the support 30 is a rod-shaped structure on which wires can be routed, the bottom end of the support 30 is connected to the side of the measuring base 20, and the top end of the support 30 can be bent to hang the light source 40, the light source 40 can have a lampshade, and the lampshade opening is downward, which facilitates light injection to the silicon wafer 01 on the measuring base 20 below. At the same time, the present silicon wafer measuring device can further include a power supply, a computer, etc., to provide power for the device, as well as for receiving and processing calculations, etc.

[0056] In at least one embodiment, by providing the structure of the support 30 connecting the light source 40, and by irradiating the measuring base 20 with the light source 40, the structure is simple, the design is reasonable, it is convenient for production and assembly, and it is convenient for the operator to operate, further improving the efficiency of the silicon wafer measurement.

[0057] Optionally, as shown in Figure 1 and Figure 2 , the silicon wafer measuring device further comprises a light-transmitting cover plate 50, and the light-transmitting cover plate 50 is arranged on the light exit end of the light source 40.

[0058] In some embodiments, the light exit end of the light source 40 is also the lampshade opening, that is, the light-transmitting cover plate 50 is connected to the lampshade opening for convenient connection. At the same time, the structure size of the light-transmitting cover plate 50 is larger than that of the lampshade opening, which is more conducive to preventing the influence of ambient light on the measurement.

[0059] In at least one embodiment, by providing the light-transmitting cover plate 50 on the fiber exit end cover of the light source 40, the light-transmitting cover plate 50 does not affect the light emission of the light source 40, while the structure of the light source 40 is protected from damage caused by bumps and the like, and the flat plate structure can also facilitate the concentration of light on the silicon wafer sample 01 on the measurement base 20, preventing the influence of ambient light on the measurement process, and further improving the accuracy of silicon wafer measurement.

[0060] Optionally, as shown in Figure 2 the first recess 23 is provided between the anode electrical connector 21 and the cathode electrical connector 22 on the measurement base 20, and a first signal receiver is arranged in the first recess 23.

[0061] In some embodiments, the first signal receiver is an optical signal receiver, which can be connected to an external computer through a wire, and is used to receive signals of the silicon wafer 01 in, for example, a silicon wafer minority carrier lifetime measurement operation. For example, in a quasi-steady-state photoconductance lifetime measurement method for measuring the minority carrier lifetime of the silicon wafer 01, after the light source 40 injects light into the silicon wafer 01, the silicon wafer 01 re-emits photons (or electromagnetic waves) after absorbing photons (or electromagnetic waves). This process can be described as a process in which a substance absorbs photons to jump to a higher energy level in an excited state and then returns to a low energy state while emitting photons. It roughly goes through three main stages of absorption, energy transfer, and light emission. Light absorption and emission occur between energy levels, and both go through an excited state. Energy transfer is due to the movement of the excited state. In this process, the number and intensity of photons released during the process of the doped element being excited after absorbing photons and then returning to the ground state can be received by the first signal receiver, and the signal information is transmitted to the computer. Through relevant models and calculations, the minority carrier lifetime is obtained.

[0062] In at least one embodiment, by providing the first recess 23 between the anode electrical connector 21 and the cathode electrical connector 22 on the measurement base 20, and arranging the first signal receiver in the first recess 23, signal reception can be performed through the first signal receiver, which facilitates the measurement of, for example, the minority carrier lifetime of the silicon wafer 01. At the same time, the first recess 23 not only protects the structure of the first signal receiver, but also prevents other environmental light from affecting the measurement accuracy, further improving the measurement accuracy.

[0063] Optionally, as shown in Figure 2 the first recess 23 is provided between the anode electrical connector 21 and the cathode electrical connector 22 on the measurement base 20, and a first signal receiver is arranged in the first recess 23.

[0064] In some embodiments, the shape of the filter is the same as the cross-sectional shape of the first groove 23, and the filtering effect is better. It should be noted that, in order to improve the accuracy of the measurement, when performing the silicon wafer 01, for example, minority carrier lifetime measurement operation, a filter of a certain wavelength can be arranged above the receiving channel of the first signal receiver to filter out, for example, high-energy light that is not absorbed by the silicon wafer 01, so as to prevent affecting the measurement result. In addition, the first groove 23 is a circular groove, the step structure 231 is a circular ring step, and correspondingly, the filter is a circular sheet structure. The circular groove is convenient to process, and the uniformity of the measurement is better, which is beneficial to accurate measurement.

[0065] In at least one embodiment, by arranging the filter in the first groove 23 and above the first receiver, the filter can filter out, for example, high-energy light that is not absorbed by the silicon wafer 01, so as to prevent affecting the measurement result, improve the accuracy of the silicon wafer measurement, and by arranging the step structure 231 on the groove wall of the first groove 23 and lapping the filter on the step structure 231, the connection is convenient, the assembly is convenient, and the replacement of the filter is convenient, thereby further improving the efficiency of the silicon wafer measurement operation.

[0066] Optionally, as shown in Figure 2 , at least one second groove 24 is further arranged between the anode electrical connector 21 and the cathode electrical connector 22 on the measurement base 20, and a second signal receiver is arranged in the second groove 24.

[0067] In some embodiments, the second groove 24 is also a circular groove, which is convenient to install the second signal receiver. In addition, the second groove 24 can be provided with two second signal receivers, and the two second signal receivers are respectively arranged in the two second grooves 24. The second signal receiver is also an optical signal receiver, which is connected with an external computer through a wire, and is used to receive the optical signal of the silicon wafer 01 in the process of measuring the minority carrier lifetime of the silicon wafer 01 by the quasi-steady-state photoconductance lifetime measurement method, so as to improve the measurement accuracy.

[0068] In at least one embodiment, by arranging the second groove 24 between the anode electrical connector 21 and the cathode electrical connector 22 on the measurement base 20, and arranging the second signal receiver in the second groove 24, the second signal receiver can be used as a signal receiving device for signal calibration and reference in the process of measuring the minority carrier lifetime of the silicon wafer, which is beneficial to further improving the accuracy of the silicon wafer minority carrier lifetime measurement.

[0069] In addition, as shown in Figure 1 and Figure 2 , one or more embodiments of the present application provide a silicon wafer measurement system, which comprises the silicon wafer measurement device

[0070] In some embodiments, the silicon wafer measurement system further comprises a computer for receiving signals, signal processing calculations, and for controlling the silicon wafer measurement device.

[0071] In at least one embodiment, the silicon wafer measurement system and the silicon wafer measurement device have the same advantages over the prior art, and it will be understood by those skilled in the art that equipping the silicon wafer measurement device with the corresponding silicon wafer measurement system is within the ordinary skill of the art, and will not be described here.

[0072] The above describes the basic principles, main features and advantages of the present application. Those skilled in the art should understand that the present application is not limited to the above embodiments, and the above embodiments and descriptions in the specification are only the principles of the present application. Without departing from the spirit and scope of the present application, various changes and improvements can be made to the present application, and these changes and improvements all fall within the scope of the claimed present application. The scope of protection claimed by the present application is defined by the appended claims and their equivalents.

Claims

1. A silicon wafer passivation container, characterized by, The container body is used for containing conductive passivation liquid and silicon wafers, and is provided with an anode electrical connector and a cathode electrical connector, one end of the anode electrical connector and one end of the cathode electrical connector extend into the container body, and the other ends of the anode electrical connector and the cathode electrical connector are located outside the container body, and the end of the anode electrical connector located in the container body is used for abutting against the silicon wafers.

2. The silicon wafer passivation container of claim 1, wherein, The container body is in a bag structure, and at least a part of the container body is provided as a transparent structure.

3. The silicon wafer passivation container of claim 2, wherein, One side of the container body is provided with a self-sealing structure.

4. The silicon wafer passivation container of claim 1, wherein, The length of the anode electrical connector extending into the container body is greater than the length of the cathode electrical connector extending into the container body.

5. A silicon wafer measuring device, characterized by comprising: The silicon wafer passivation container comprises a measuring base and a silicon wafer passivation container as claimed in any one of claims 1-4, the measuring base is provided with an anode electrical connector seat and a cathode electrical connector seat, and the anode electrical connector and the cathode electrical connector of the silicon wafer passivation container are connected to the anode electrical connector seat and the cathode electrical connector seat, respectively.

6. The silicon wafer measuring device of claim 5, wherein, The silicon wafer measuring device further comprises a support and a light source, the bottom end of the support is connected to the measuring base, the light source is connected to the top end of the support, and the light source is irradiated towards the measuring base.

7. The silicon wafer measuring device of claim 5, wherein, A first recess is formed between the anode electrical connector seat and the cathode electrical connector seat on the measuring base, and a first signal receiver is arranged in the first recess.

8. The silicon wafer measuring device of claim 7, wherein, An optical filter is further arranged above the first signal receiver in the first recess, and a stepped structure is arranged on the groove wall of the first recess, and the optical filter is overlapped on the stepped structure.

9. The silicon wafer measuring device of claim 7, wherein, At least one second recess is further formed between the anode electrical connector seat and the cathode electrical connector seat on the measuring base, and a second signal receiver is arranged in the second recess.

10. The silicon wafer measuring device of claim 6, wherein, The silicon wafer measuring device further comprises a light-transmitting cover plate, and the light-transmitting cover plate is arranged on the light exit end of the light source.

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