Gas transmission assembly and semiconductor processing device

Abstract

The utility model provides a gas transmission assembly and a semiconductor processing apparatus. The assembly comprises a heating base, a first air inlet module, a second air inlet module, a first valve block set, a second valve block set and an air outlet module, the first air inlet module is embedded in the heating base, and a plurality of first air inlet channels are formed in the first air inlet module; the second air inlet module is arranged above the first air inlet module, and a plurality of second air inlet channels are formed in the second air inlet module; the air outlet module is embedded in the heating base, and an air outlet channel is formed in the air outlet module; the first valve block group and the second valve block group are arranged above the heating base, the first valve block group comprises a plurality of first valve blocks, and the plurality of first valve blocks are respectively used for controlling the connection and disconnection of the plurality of first air inlet channels; the second valve block group comprises a plurality of second valve blocks, and the second valve blocks are respectively used for controlling the connection and disconnection of the second air inlet channels; wherein the plurality of first gas inlet channels are used for introducing reaction gas, and the plurality of second gas inlet channels are used for introducing purging gas.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor equipment, and in particular, to a gas transmission assembly and a semiconductor processing device. BACKGROUND

[0002] Atomic Layer Deposition (ALD) is a method of forming a thin film by introducing gas phase precursors into a reaction chamber in the form of alternating pulses and causing a gas-solid phase chemical adsorption reaction on the surface of a substrate. Plasma Enhanced Atomic Layer Deposition (PEALD) is a deposition method of forming a film by introducing plasma on the basis of ALD. Since plasma is a substance with high energy and activity, the technical personnel solved the problem that it is difficult for reactant molecules to chemically react on the surface to form a uniform and dense thin film at a lower temperature after introducing plasma. Generally, PEALD film formation will adopt the form of introducing reaction gas (one gas phase precursor and one plasma gas source) in the form of alternating pulses to form an atomic layer deposition (ALD) mode film. In the prior art, in order to keep the environment (gas flow, pressure, thermal field, etc.) in the capacitive coupled plasma (CCP) chamber in a relatively stable state, the on-off of the valve is not usually used to control the inflow and stop of the reaction gas, but the reaction gas is kept at a constant flow into the chamber, and then a radio frequency voltage is loaded on the CCP electrode to control the plasma gas source to excite or not to excite into plasma to achieve the purpose of controlling the reaction. However, in the actual production process, it may be necessary to use multiple reaction gases (including multiple gas phase precursors) for deposition and film formation, such as the need to deposit a multi-element film or the need for in-situ doping. At this time, the concentration and speed of these incoming gases are often difficult to control, which is not conducive to the reaction. The prior art cannot achieve rapid switching of multiple reaction gases and meet the control requirements of gas flow, concentration, speed, etc. while maintaining the stability of the reaction environment, so how to realize the coordinated admission of multiple gases in the field of plasma enhanced atomic layer deposition and maintain the stability of the reaction environment is a problem to be solved. CONTENT OF THE UTILITY MODEL

[0003] The technical problem to be solved by the present application is a gas transmission assembly for semiconductor processing, which can control the coordinated transmission of multiple reaction gases during reaction and maintain the stability of the reaction environment.

[0004] To solve the above technical problems, the application provides a gas transmission assembly for semiconductor processing, comprising a heating base, a first gas inlet module, a second gas inlet module, a first valve block group, a second valve block group and a gas outlet module, the first gas inlet module is embedded in the heating base, the first gas inlet module has a plurality of first gas inlet channels inside; the second gas inlet module is arranged above the first gas inlet module, and the second gas inlet module has a plurality of second gas inlet channels inside; the gas outlet module is embedded in the heating base, and the gas outlet module has a gas outlet channel inside; the first valve block group and the second valve block group are arranged above the heating base, the first valve block group comprises a plurality of first valve blocks, and the plurality of first valve blocks are respectively used for controlling the on-off of the plurality of first gas inlet channels; the second valve block group comprises a plurality of second valve blocks, and the plurality of second valve blocks are respectively used for controlling the on-off of the plurality of second gas inlet channels; wherein the plurality of first gas inlet channels are used for introducing reaction gas, and the plurality of second gas inlet channels are used for introducing purge gas.

[0005] In an embodiment of the application, each of the first gas inlet channels has a first inlet, and the first inlet is exposed to the upper surface of the first gas inlet module.

[0006] In an embodiment of the application, each of the second gas inlet channels has a second inlet, and the second inlet is exposed to the upper surface of the second gas inlet module.

[0007] In an embodiment of the application, the first gas inlet module is located at the first end of the heating base, and the second inlet is located at the first end of the second gas inlet module, wherein the first end of the second gas inlet module is close to the first end of the heating base.

[0008] In an embodiment of the application, the first gas inlet channel comprises a first section and a second section at the inlet end, the first section and the second section have a first included angle therebetween, and the first inlet is located at the first port of the first section.

[0009] In an embodiment of the application, the upper surface of the first gas inlet module is flush with the upper surface of the heating base.

[0010] In an embodiment of the application, the upper surface of the gas outlet module is flush with the upper surface of the heating base.

[0011] In an embodiment of the application, the gas outlet channel comprises a first section and a second section at the outlet end, and the first section and the second section have a second included angle therebetween.

[0012] In an embodiment of the present application, a flow guide channel is further included, the second section of the gas outlet channel has a second outlet on the upper surface of the heating base, the flow guide channel is connected with the second outlet, and the flow guide channel is used to communicate with an inlet manifold of a semiconductor processing device.

[0013] In an embodiment of the present application, the flow guide channel includes a first flow guide channel and a second flow guide channel which are in communication with each other, the first flow guide channel is arranged above the heating base, and the second flow guide channel is arranged inside the heating base, and a first end of the first flow guide channel is connected with the second outlet.

[0014] In order to solve the above technical problems, the present application further provides a semiconductor processing device, which includes a reaction chamber, an inlet manifold and the gas delivery assembly as described above, the inlet manifold has a manifold inlet, the gas delivery assembly is arranged on the inlet manifold, the gas outlet channel is in communication with the manifold inlet, and the inlet manifold is used to provide the reaction chamber with the gas from the gas outlet channel.

[0015] The present application provides a gas delivery assembly and a semiconductor processing device for semiconductor processing. The gas delivery assembly includes a heating base, a first gas inlet module, a second gas inlet module, a first valve block group, a second valve block group and a gas outlet module. The first gas inlet module has a plurality of first gas inlet channels inside, the second gas inlet module has a plurality of second gas inlet channels inside, the plurality of first valve blocks in the first valve block group correspond to the plurality of first gas inlet channels one by one, and the plurality of second valve blocks in the second valve block group correspond to the plurality of second gas inlet channels one by one. Such a design can realize the rapid switching of multiple reaction gases and purge gases and the coordinated gas inlet. At the same time, according to the combined design of the heating base, the first gas inlet module, the first valve block group, the second valve block group and the gas outlet module, the structure is compact and easy to install. The heating base uniformly heats to maintain the temperature field and keep the airflow stable, so that the pressure of the semiconductor reaction chamber is not affected. BRIEF DESCRIPTION OF DRAWINGS

[0016] The accompanying drawings are included to provide a further understanding of the present application, and are incorporated in and constitute a part of this application, illustrate embodiments of the present application, and together with the description serve to explain the principle of the present application. In the drawings:

[0017] Figure 1 is a structural schematic diagram of the gas delivery assembly of an embodiment of the present application;

[0018] Figure 2 is Figure 1 is a top view of the gas delivery assembly of the embodiment shown in the figure;

[0019] Figure 3 is a sectional view along Figure 2a cross-sectional view taken along the line D-D or D'-D' shown in FIG. 1 1 ;

[0020] Figure 4 is a front view of a gas delivery assembly according to an embodiment of the present application;

[0021] Figure 5 is a cross-sectional view taken along the line F-F shown in FIG. 1 1 ; Figure 4

[0022] Figure 6 shows a schematic diagram of a gas delivery path in a gas delivery assembly according to an embodiment of the present application;

[0023] Figure 7 is a timing diagram of gas delivery using a gas delivery assembly according to an embodiment of the present application;

[0024] Figure 8 is a schematic block diagram of a semiconductor processing apparatus according to an embodiment of the present application. DETAILED DESCRIPTION

[0025] In order to more clearly demonstrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiments. Obviously, the drawings in the following description are only some examples or embodiments of the present application, and for those skilled in the art, the present application can be applied to other similar scenarios without creative labor on the basis of these drawings. Unless the context clearly indicates otherwise or otherwise stated, the same reference numbers in the drawings represent the same structure or operation.

[0026] As shown in the present application, unless the context clearly indicates otherwise or otherwise stated, the words "one", "a", "an", and / or "the" do not specifically refer to the singular, but also include the plural. Generally, the terms "comprise" and "include" only indicate the inclusion of the steps and elements explicitly identified, and these steps and elements do not constitute an exclusive list, and the method or device can also include other steps or elements.

[0027] ​The foregoing is a summary and thus contains only the most basic embodiment. The application can be practiced with the specific embodiments and options described herein, and it can also be practiced without such specific embodiments and options. Furthermore, the foregoing summary should not limit the scope of the application to a single feature or option described herein. Accordingly, no single feature or option is a requisite for the practice of this application. Unless otherwise specifically explained herein, the relative arrangements of parts, sequences of processes, numerical expressions, and values stated in these embodiments are not meant to limit the scope of the present application. Also, it is to be understood that the dimensions shown in the drawings are not necessarily to scale. Techniques, methods, and devices known to those of ordinary skill in the relevant art can not be discussed in detail but can be assumed known to the person of ordinary skill in the art. In the examples shown and discussed herein, any specific values are to be interpreted as merely exemplary and not limiting. Thus, other examples of the exemplary embodiments can have different values. It is to be noted that like numbers and letters refer to like elements throughout the several views of the drawings and, as such, no further discussion on such elements is needed.

[0028] In the description of the present application, it is to be understood that the orientation or positional relationships indicated by orientation words such as "front, back, upper, lower, left, right", "transverse, vertical, perpendicular, horizontal", and "top, bottom" and the like are generally based on the orientation or positional relationships shown in the drawings, and are merely for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation or be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the scope of protection of the present application; the orientation words "inner, outer" refer to the inner and outer relative to the contour of the parts themselves.

[0029] For the convenience of description, spatial relative terms such as "over", "above", "upper surface", "upper", and the like can be used herein to describe the spatial positional relationship of one device or feature with respect to other devices or features as shown in the drawings. It should be understood that the spatial relative terms are intended to include different orientations in use or operation in addition to the orientation of the devices described in the drawings. For example, if the devices in the drawings are inverted, the device described as "above" or "over" other devices or structures will be positioned "below" or "under" the other devices or structures. Thus, the exemplary term "above" can include both "above" and "below" orientations. The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used herein are interpreted accordingly.

[0030] Furthermore, it needs to be explained that the use of the terms "first", "second" and the like is merely intended to differentiate between similar components, and does not have a special meaning unless otherwise stated. In addition, although the terms used in the present application are selected from commonly known terms, some terms mentioned in the present application may be selected by the applicant according to his or her judgment, and the detailed meanings thereof are described in the relevant part of the description. In addition, the present application is required to be understood not only by the actual terms used, but also by the meaning implied by each term.

[0031] The gas delivery assembly and the semiconductor processing device disclosed in the present application are suitable for various gas delivery scenarios, suitable for the semiconductor field, and especially suitable for the PEALD field. The gas delivered by the embodiments disclosed in the present application can be a reaction gas or a purge gas. The reaction gas refers to a gas participating in the subsequent film forming reaction. The reaction gas can be a gas phase precursor (for example, a boron source: TMB trimethylboron) or a plasma gas source. The precursor generally refers to a volatile compound used to participate in the reaction, containing elements (which can be composite elements) required for subsequent film forming, and having a high vapor pressure at a relatively low temperature. The gas phase precursor can be obtained by evaporation in some embodiments, and generally driven by the input of external carrier gas (gas not participating in the reaction, such as nitrogen) to drive the transmission of the gas phase precursor. The plasma gas source is used to provide a gas source (such as oxygen) that is subsequently excited into plasma. The purge gas is generally a gas that does not participate in the reaction, such as nitrogen, which is used to purge impurities during the reaction. The gas delivery assembly in the embodiments disclosed herein can deliver different reaction gases to the subsequent reaction chamber through the gas outlet module through the first gas inlet channel of the first gas inlet module, and can deliver purge gas to the reaction chamber through the gas outlet module through the plurality of second gas inlet channels of the second gas inlet module.

[0032] Figure 1 is a schematic diagram of the gas delivery assembly of an embodiment of the present application. As shown in Figure 1 , the gas delivery assembly 100 includes a heating base 110, a first gas inlet module 120, a second gas inlet module 130, a first valve block group 140, a second valve block group 150, and a gas outlet module 160. The first gas inlet module 120 is embedded in the heating base 110. The second gas inlet module 130 is arranged above the first gas inlet module 120. The gas outlet module 160 is embedded in the heating base 110. The first valve block group 140 and the second valve block group 150 are both arranged above the heating base 110.

[0033] Figure 2 is a top view of the gas delivery assembly of the embodiment shown in Figure 1 . Figure 3 is a sectional view of the gas delivery assembly of the embodiment shown in Figure 2a cross-sectional view of the D-D or D'-D' line cut shown in FIG. 1B. In combination with Figure 1 and Figure 3 As shown in FIG. 1B, the first intake module 120 has a plurality of first intake channels 121a, 121b inside. The second intake module 130 has a plurality of second intake channels 131a, 131b inside. Among them, the first intake channel 121a and the second intake channel 131a are shown along the D-D line cut, and the first intake channel 121b and the second intake channel 131b are shown along the D'-D' line cut. The outlet module 160 has an outlet channel 161 inside. The plurality of first intake channels 121a, 121b are used to pass in the reaction gas, and the plurality of second intake channels 131a, 131b are used to pass in the purge gas.

[0034] In Figure 1-3 In the embodiment shown in FIG. 1B, the number of first intake channels 121a, 121b and second intake channels 131a, 131b is 2. The first valve block group 140 includes 2 first valve blocks 140a, 140b, and the second valve block group 150 includes 2 second valve blocks 150a, 150b. Each first valve block 140a, 140b is used to control the on-off of a first intake channel 121a, 121b, and each second valve block 150a, 150b is used to control the on-off of a second intake channel 131a, 131b. That is, the first valve blocks 140a, 140b correspond to the two first intake channels 131a, 131b one by one, and the second valve blocks 150a, 150b correspond to the two second intake channels 131a, 131b one by one.

[0035] The gas transmission assembly 100 of the present application embeds the first intake module 120 and the outlet module 160 in the heating base 110, respectively, which has the advantages of compact structure and easy installation. At the same time, when heating is performed using the heating base 110, the reaction gas and the purge gas can be uniformly heated to maintain the temperature field, which is conducive to maintaining the stability of the gas flow. When the gas transmission assembly 100 of the present application is applied to semiconductor processing, the gas transmission assembly 100 is used to provide gas to the semiconductor reaction chamber. Since the gas transmission assembly 100 is conducive to maintaining the stability of the gas flow, it can further ensure that the pressure in the semiconductor reaction chamber is not affected.

[0036] In combination with Figure 1 and Figure 3 As shown in FIG. 1B, the first valve block group 140 and the second valve block group 150 are arranged side by side above the heating base 110, so that the structure of the gas transmission assembly 100 is compact, has a small volume, and is suitable for installation and use in a small space.

[0037] In some embodiments, Figure 1The first valve blocks 140a, 140b and the second valve blocks 150a, 150b shown can be a standard part with a unified size. In some embodiments, the valve types in the valve block group can be gate valves, stop valves, or other valves for controlling gas transmission. The valves can be operated by actuators or pneumatically or hydraulically.

[0038] In some embodiments, the first valve blocks 140a, 140b and the second valve blocks 150a, 150b can alternately control the on-off of the gas inlet channels and quickly switch to achieve the coordinated inlet of multiple reaction gases.

[0039] In some embodiments, the reaction gases flowing into the multiple first gas inlet channels 121a, 121b can all come from a gas-phase precursor, for example, different types of gas precursors. For embodiments including 2 first gas channels 121a, 121b, one type of reaction gas can come from a gas-phase precursor, and another type of reaction gas can come from a plasma gas source, for example, oxygen (O2).

[0040] Referring to Figure 1 As shown, in some embodiments, each first gas inlet channel 121a, 121b has a first inlet 1211a, 1211b respectively, and the first inlet 1211a, 1211b is exposed to the upper surface of the first gas inlet module 120. According to such an arrangement, it is convenient for the operator to connect external pipelines (for example, external pipelines connected to the reaction gas source) to the first inlet 1211a, 1211b.

[0041] Referring to Figure 1 As shown, in some embodiments, each second gas inlet channel 131a, 131b has a second inlet 1311a, 1311b respectively, and the second inlet 1311a, 1311b is exposed to the upper surface of the second gas inlet module 130. According to such an arrangement, it is convenient for the operator to connect external pipelines (for example, external pipelines connected to the purge gas source) to the second inlet 1311a, 1311b.

[0042] Referring to Figure 1 As shown, in some embodiments, the first gas inlet module 120 is located at the first end 1101 of the heating base 110, and the second inlets 1311a, 1311b are located at the first end 1301 of the second gas inlet module 130, wherein the first end 1301 of the second gas inlet module 130 is close to the first end 1101 of the heating base 110. In actual installation, the gas transmission assembly 100 can be located in front of the operator, and the first inlets 1211a, 1211b and the second inlets 1311a, 1311b are all located at the same end of the gas transmission assembly 100, which is convenient for the operator to operate, makes the installation process simple and easy to operate, and is conducive to improving the installation efficiency.

[0043] Referring toFigure 1 and Figure 3 As shown in and

[0044] As shown in Figure 1 and Figure 3 As shown in Figure 3 and Figure 3 As shown in

[0045] Figure 4 is a front view of a gas delivery assembly according to an embodiment of the present application. Figure 5 is a cross-sectional view along line FF in Figure 4 Figure 4 and Figure 5 As shown in

[0046] In some embodiments, as shown in Figure 1 and Figure 3As shown, from the structural position, the second gas inlet module 130 is closer to the first valve block group 140 and the second valve block group 150 than the first gas inlet module 120, that is, the second gas inlet channels 131a, 131b for the purge gas are closer to the valve block groups, so that the second gas inlet channels 131a, 131b can be shorter, improving the purge efficiency.

[0047] Reference Figure 3 There are also rear end channels 141a, 141b below the first valve block group 140, wherein the rear end channel 141a corresponds to the first valve block 140a and the second valve block 150a, and the rear end channel 141b corresponds to the first valve block 140b and the second valve block 150b. For example, in the pulse stage of the reaction gas, the first valve block 140a is opened, the reaction gas A enters the rear end channel 141a through the first gas inlet channel 121a, and then enters the common gas outlet channel 161. In the purge stage, the first valve block 140a is closed, the second valve block 150a is opened, the purge gas enters the rear end channel 141a through the second gas inlet channel 131a, and then enters the common gas outlet channel 161, so that the rear end channel 141a, the gas outlet channel 161 and the following channels can be purged, and the impurities in the channels can be removed. As described above, by arranging the second gas inlet module 130 above the first gas inlet module 120, the length of the purge path is shortened, which is conducive to improving the purge efficiency.

[0048] Figure 6 The transmission path of the gas in the gas transmission assembly of an embodiment of the present application is shown. The purge gas is provided to two second gas inlet channels 131a, 131b, wherein the first gas inlet channel 131a corresponds to the second valve block 150a, and the first gas inlet channel 131b corresponds to the second valve block 150b; the precursor A is provided to a first gas inlet channel 121a corresponding to the first valve block 140a, and the precursor B is provided to another first gas inlet channel 121b corresponding to the first valve block 140b. Figure 7 The timing diagram of the gas provided by the gas transmission assembly of an embodiment of the present application is shown, and the timing diagram of the radio frequency voltage involved in the PEALD application is also shown. In combination with Figure 6 and Figure 7 As shown, in an embodiment, the gas is transmitted according to the following process:

[0049] Step S1: open the first valve block 140a, close the second valve block 150a, and carry the precursor A out of the precursor source bottle A with the carrier gas, and the precursor A flows into the semiconductor reaction chamber through the first valve block 140a, the gas outlet module 160 and the gas inlet manifold 240.

[0050] Step S2: close the first valve block 140a, open the second valve block 150a, purge gas flows through the second valve block 150a, the gas outlet module 160, the gas inlet manifold 240 into the semiconductor reaction chamber.

[0051] Step S3: open the first valve block 140b, close the second valve block 150b, carrier gas carries the precursor B out of the precursor source bottle B, the precursor B flows through the first valve block 140b, the gas outlet module 160, the gas inlet manifold 240 into the semiconductor reaction chamber.

[0052] Step S4: close the first valve block 140b, open the second valve block 150b, purge gas flows through the second valve block 150b, the gas outlet module 160, the gas inlet manifold 240 into the semiconductor reaction chamber.

[0053] Step S5: open the radio frequency voltage.

[0054] It should be noted that, Figure 7 The above-mentioned steps S1-S5 are only examples, and are not used to limit the specific providing mode and timing relationship of the precursor A, the precursor B, the reaction gas and the radio frequency gas. Repeatedly performing the steps S1-S5 according to the above-mentioned steps S1-S5 can realize the switching and coordinated gas inlet of different gases.

[0055] As Figure 3 shown, in some embodiments, the first gas inlet channel 121a includes a first section 1212a and a second section 1213a at the inlet end, the first section 1212a and the second section 1213a have an included angle θ1, and the first inlet 1211a is located at the first port of the first section 1212a. Exemplarily, the first section 1212a is a straight pipe, which has two ports, i.e. the first port and the second port. The first inlet 1211a is the first port of the first section 1212a. The second section 1213a is also a straight pipe, which has two ports, i.e. the first port and the second port. The second port of the first section 1212a is connected with the first port of the second section 1213a, so that the first section 1212a and the second section 1213a are in communication. In this embodiment, the second section 1213a of the first gas inlet channel 121a is in communication with the internal channel in the valve body of the first valve block 140a. When the first valve block 140a is opened, the corresponding first gas inlet channel 121a is in communication with the gas outlet channel 161. When the first valve block 140a is closed, the communication between the corresponding first gas inlet channel 121a and the gas outlet channel 161 is blocked.

[0056] Similarly, the first gas inlet channel 121b includes a first section 1212b and a second section 1213b, the first section 1212b and the second section 1213b have an included angle θ1 therebetween, and the first inlet 1211b is located at a first end of the first section 1212b. The second section 1213b of the first gas inlet channel 121b is in communication with an internal channel in the valve body of the first valve block 140b. When the first valve block 140b is open, the corresponding first gas inlet channel 121b is in communication with the gas outlet channel 161. When the first valve block 140b is closed, the communication between the corresponding first gas inlet channel 121b and the gas outlet channel 161 is blocked.

[0057] In some embodiments, the gas outlet channel 161 includes a first section 1611 and a second section 1612 at the outlet end, the first section 1611 and the second section 1612 have an included angle θ2 therebetween. In some embodiments, the included angles θ1 and θ2 can be any angle between 30-120 degrees, and the included angles θ1 and θ2 can be the same or different. The internal included angles θ1 and θ2 are designed to shorten the total length of the gas transmission pipeline, and when the gas transmission assembly 100 of the present application is applied to a semiconductor reaction chamber, the valve blocks are generally arranged at the connection of the inlet of the gas manifold, rather than at the gas source end, so that the total path of the purge gas transmission is the shortest, thereby greatly reducing the purge time. In addition, by setting the included angles θ1 and θ2, the purge gas can also be buffered during transmission, ensuring the stability of the pressure and gas flow of the gas outlet.

[0058] According to the gas transmission assembly 100 of the present application, the first gas inlet module 120 and the gas outlet module 160 are both arranged in the heating base 110, and the integrated design of the valve standard parts can be uniformly heated to maintain the temperature field; and the integrated design of the heating base 110, the first gas inlet module 120, the gas outlet module 160, the first valve block group 140 and the second valve block group 150 can simplify the valve block installation and maintain the stability of the gas flow transmission, so that the pressure of the chamber is not affected.

[0059] As shown in Figure 3 In some embodiments, the gas transmission assembly 100 further includes a flow guide channel 170, the second section 1612 of the gas outlet channel 161 has a second outlet 1613 on the upper surface of the heating base 110, and the flow guide channel 170 is connected to the second outlet 1613. The flow guide channel 170 is used to communicate with the gas inlet manifold 240 of the semiconductor processing device.

[0060] As shown in Figure 3As shown, in some embodiments, the flow guide passage 170 includes a first flow guide passage 171 and a second flow guide passage 172 which are in communication with each other, the first flow guide passage 171 is arranged above the heating base 110, and the second flow guide passage 172 is arranged inside the heating base 110, and a first end 1711 of the first flow guide passage 171 is connected to the second outlet 1613. As shown, Figure 3 As shown, the first flow guide passage 171 is bridged between the second outlet 1613 and the second flow guide passage 172. According to such a flow guide passage 170, the gas is buffered in the first flow guide passage 171, which is conducive to the stability of the gas flow. In some embodiments, the first flow guide passage 171 is externally provided with a wrap-type insulation layer to insulate the gas passing therethrough.

[0061] The present application does not limit the heating mode of the heating base 110. As shown, Figure 5 As shown, in some embodiments, the heating base 110 is internally provided with a heating space 180, which can accommodate a heating rod for providing heat to the heating base 110. In other embodiments, other ways can also be used to make the heating base 110 have a heating function, such as arranging a heating wire inside or on the surface of the heating base 110.

[0062] The present application also discloses a semiconductor processing device 200, which includes a reaction chamber 230, a gas inlet manifold 240 and the above-mentioned gas transmission assembly 100. Figure 8 A schematic block diagram of the semiconductor processing device 200 according to an embodiment of the present application is shown. As shown, Figure 8 As shown, the semiconductor processing device 200 specifically includes: the gas transmission assembly 100 (mainly showing the first valve block 140a and the second valve block 150a), the reaction chamber 230 and the gas inlet manifold 240. Figure 8 The gas inlet manifold 240 also has a manifold inlet 241. The gas transmission assembly 100 is arranged on the gas inlet manifold 240, the outlet passage 161 is in communication with the manifold inlet 241, and the manifold inlet 241 is used to provide the gas from the outlet passage 161 to the reaction chamber 230.

[0063] In some embodiments, as shown, Figure 8As shown, the semiconductor processing apparatus 200 further comprises a showerhead 231 and a heating tray 232. The heating tray 232 and the showerhead 231 are located in the reaction chamber 230. The semiconductor processing apparatus 200 connects a container for containing a reaction source, such as the liquid storage device 210, to the reaction chamber 230 through the gas transmission assembly 100. The liquid storage device 210 is used to store a liquid precursor. The liquid storage device 210 can be configured with a heating device to obtain a gas-phase precursor by evaporation. In some embodiments, the heating tray 232 is liftable and, in some embodiments, is also rotatable, and is used to carry and heat a substrate to provide a carrying structure and temperature conditions for atomic deposition film formation. The showerhead 231 is used to spray a reaction gas on the substrate. The gas inlet manifold 240 is a connecting device with multiple pipelines inside. In other embodiments, the manifold inlet 241 can be used to access the gas transmission assembly 100. The gas inlet manifold 240 can also have another pipeline inlet connected to oxygen, which is used to provide a plasma gas source. The gas inlet manifold 240 in the present application has a short pipeline, and after being connected to the gas transmission assembly 100, the total path of the purge gas in the gas assembly and the manifold is short, which can reduce the total purge time.

[0064] The working process of the semiconductor processing apparatus 200 is illustrated below by way of example. For example, external carrier gas is input into the liquid storage device 210, and the carrier gas carries the gas-phase precursor A obtained by evaporation of the liquid storage device 210 into the first gas inlet channel 121a in the first gas inlet module 120 of the gas transmission assembly 100, and the gas-phase precursor A is controlled to enter the gas outlet module 160 via the first valve block 140a, and then the gas-phase precursor A enters the reaction chamber 230 via the manifold inlet 241 of the gas inlet manifold 240 to the surface of the substrate on the heating tray 232 to participate in the reaction to form a film. In this process, oxygen can enter via another pipeline inlet of the gas inlet manifold 240 to provide a plasma gas source to promote the deposition of the precursor to form a film. In some embodiments, after the purge gas enters the gas transmission assembly 100, the second valve block 150a controls the purge gas to enter the reaction chamber 230 via the gas inlet manifold 240 for purging the gas channels and reaction space after the first valve body 140a.

[0065] In the semiconductor processing apparatus 200 of the present application, the gas transmission assembly 100 is arranged as a whole at the manifold inlet 241 of the gas inlet manifold 240 inlet, rather than at the gas source end, so that the total transmission path of the purge gas is the shortest, thereby greatly reducing the purge time.

[0066] The application uses certain terminology to describe the embodiments of the application. As used herein, the terms "one embodiment", "an embodiment" or "some embodiments" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the application. Therefore, the appearances of the phrase "in one embodiment" or "in an embodiment" or "in some embodiments" in various places throughout this specification are not necessarily referring to the same embodiment of the application. Furthermore, the particular features, structures, or characteristics of any one or more embodiments of the application can be combined in any suitable manner.

[0067] It should be noted that, as an aid to understanding the present disclosure, expressions used in the foregoing description of embodiments of the application may, in some instances, conflate multiple features into a single embodiment, figure, or description thereof. This method of disclosure, however, is not meant to limit the application to a singular set of features, but rather, the subject application requires only that selected features be included in one or more embodiments of the application.

[0068] Some embodiments use numerical terms to describe quantities of ingredients, attributes, and the like. It is understood that such numerical terms used in embodiments descriptions are approximations, and as such, a tolerable degree of variation is understood to be within the scope of each such numerical term, unless otherwise indicated. Accordingly, numerical parameters in the application are approximations, and as such, can vary depending upon the requirements of the particular application. In some embodiments, numerical parameters are determined by the particular application in some embodiments, numerical parameters should be considered in the context of the number of significant digits used for the quantity. Although the numerical ranges and parameters setting forth the broad scope of the application in some embodiments are approximations, the numerical values set forth in specific examples are reported as precisely as practicable.

Claims

1. A gas transfer assembly, characterized by, The heating base (110), the first air inlet module (120), the second air inlet module (130), the first valve block group (140), the second valve block group (150) and the air outlet module (160) are provided, The first air inlet module (120) is embedded in the heating base (110), and the first air inlet module (120) has a plurality of first air inlet channels inside; The second air inlet module (130) is arranged above the first air inlet module (120), and the second air inlet module (130) has a plurality of second air inlet channels inside; The air outlet module (160) is embedded in the heating base (110), and the air outlet module (160) has an air outlet channel (161) inside; The first valve block group (140) and the second valve block group (150) are arranged above the heating base (110), the first valve block group (140) includes a plurality of first valve blocks, and the plurality of first valve blocks are respectively used for controlling the on-off of the plurality of first air inlet channels; the second valve block group (150) includes a plurality of second valve blocks, and the plurality of second valve blocks are respectively used for controlling the on-off of the plurality of second air inlet channels; Wherein, the plurality of first air inlet channels are used for introducing reaction gas, and the plurality of second air inlet channels are used for introducing purge gas.

2. The gas transfer assembly of claim 1, wherein, Each of the first air inlet channels has a first inlet, and the first inlet is exposed to the upper surface of the first air inlet module (120).

3. The gas transfer assembly of claim 2, wherein, Each of the second air inlet channels has a second inlet, and the second inlet is exposed to the upper surface of the second air inlet module (130).

4. The gas transfer assembly of claim 3, wherein, The first air inlet module (120) is located at the first end (1101) of the heating base, and the second inlet is located at the first end (1301) of the second air inlet module, wherein the first end (1301) of the second air inlet module is close to the first end (1101) of the heating base.

5. The gas transfer assembly of claim 2, wherein, The first air inlet channel includes a first section and a second section at the inlet end, and the first section and the second section have a first included angle (θ1), and the first inlet is located at the first port of the first section.

6. The gas transfer assembly of claim 1, wherein, The upper surface of the first air inlet module (120) is flush with the upper surface of the heating base (110).

7. The gas transfer assembly of claim 1, wherein, The upper surface of the air outlet module (160) is flush with the upper surface of the heating base (110).

8. The gas transfer assembly of claim 1, wherein, The air outlet channel (161) includes a first section (1611) and a second section (1612) at the outlet end, and the first section (1611) and the second section (1612) have a second included angle (θ2).

9. The gas transfer assembly of claim 8, wherein, Further comprising a flow guide channel (170), the second section (1612) of the air outlet channel has a second outlet (1613) on the upper surface of the heating base (110), the flow guide channel (170) is connected with the second outlet (1613), and the flow guide channel (170) is used for communicating with the air inlet manifold (240) of the semiconductor processing device (200).

10. The gas transfer assembly of claim 9, wherein, The flow guide channel (170) comprises a first flow guide channel (171) and a second flow guide channel (172) which are in communication with each other, the first flow guide channel (171) is arranged above the heating base (110), the second flow guide channel (172) is arranged inside the heating base (110), and a first end (1711) of the first flow guide channel is connected with the second outlet (1613).

11. A semiconductor processing apparatus, characterized by comprising: A gas delivery assembly (100) as claimed in any one of claims 1 to 10, a reaction chamber (230), and a gas manifold (240) having a manifold inlet (241), the gas delivery assembly (100) being arranged on the gas manifold (240), the gas outlet channel (161) being in communication with the manifold inlet (241), the gas manifold (240) being configured to provide gas from the gas outlet channel (161) to the reaction chamber (230).

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